CN116632095A - Locally doped battery with double-sided tunneling layer structure and preparation method thereof - Google Patents
Locally doped battery with double-sided tunneling layer structure and preparation method thereof Download PDFInfo
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- CN116632095A CN116632095A CN202310745381.5A CN202310745381A CN116632095A CN 116632095 A CN116632095 A CN 116632095A CN 202310745381 A CN202310745381 A CN 202310745381A CN 116632095 A CN116632095 A CN 116632095A
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- 230000005641 tunneling Effects 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title abstract description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052709 silver Inorganic materials 0.000 claims abstract description 45
- 239000004332 silver Substances 0.000 claims abstract description 45
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 38
- 229920005591 polysilicon Polymers 0.000 claims abstract description 37
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052796 boron Inorganic materials 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000007639 printing Methods 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 229910052755 nonmetal Inorganic materials 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 12
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 238000001465 metallisation Methods 0.000 abstract description 2
- 230000003071 parasitic effect Effects 0.000 abstract description 2
- 238000002161 passivation Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000011895 specific detection Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention relates to the field of batteries, in particular to a locally doped battery with a double-sided tunneling layer structure and a preparation method thereof, wherein the preparation method comprises the following steps: (1) depositing a tunneling layer on a substrate; (2) Growing a polysilicon layer on the tunneling layer and performing low-concentration boron doping; (3) Mask protection, then high-concentration boron doping is carried out on the metallized area, and then the non-metal area is thinned by laser to form an area I and an area II; (4) And printing a burning-through type silver paste on the first area, and printing a non-burning-through type silver paste on the main grid line, wherein the burning-through type silver paste and the non-burning-through type silver paste are connected. According to the invention, the front surface of the polysilicon is subjected to low doping, the metallized area is subjected to high doping according to the metallized pattern, and the non-metallized area is thinned by laser, so that the light parasitic absorption of long waves is reduced, the short-circuit current is improved, and the conversion efficiency is improved; and by printing silver paste according to the metallization pattern, the second electrode is directly connected with the first electrode, so that the interconnection effect is realized, and the consumption of the silver paste is reduced.
Description
Technical Field
The invention relates to the technical field of batteries, in particular to a locally doped battery with a double-sided tunneling layer structure and a preparation method thereof.
Background
For a conventional crystalline silicon solar cell, the emitter is a boron diffusion layer on the front surface, and when screen printing is performed on the front surface, in order to ensure good ohmic contact between the metal gate electrode (the main gate and the fine gate) and the emitter, the front surface needs a higher surface doping concentration, but the boron diffusion layer with a higher doping concentration can cause blue light absorption loss and photo-generated carrier surface recombination loss, so that conversion efficiency is reduced.
The passivation contact structure based on polysilicon, i.e. the tunnel oxide passivation contact concept, was first proposed by fraunhofer institute, germany, with a substrate structure of ultra-thin silicon oxide and a heavily doped polysilicon (poly-Si) layer for silicon solar cells, providing excellent full area passivation and carrier collection, which can significantly improve the overall performance of the device. This structure has become a hotspot for efficient battery research due to its excellent performance and relative simplicity of the industrial process. In recent years, significant progress has been made in the research of such polysilicon passivation contact technology, including polysilicon growth, oxide preparation, and device integration. Currently, TOPCon structures are mainly used for the back surface of solar cells, while the front surface adopts conventional diffusion junction and contact schemes.
The TOPCon structure is not much researched when the TOPCon structure is applied to the front surface of a solar cell, and the corrosion capability of the front surface conductive paste is difficult to control, so that a polysilicon layer needs to be deposited to reach a certain thickness (more than 150 nm) to prevent the polysilicon layer from burning through. However, as the thickness increases, the absorption degree of light by the polysilicon layer increases, and excessive thickness of the polysilicon layer may cause a short-circuit current of the battery to flow low, resulting in a decrease in the conversion efficiency of the battery. For this reason, it is urgent to design a new type of solar cell.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a local doped battery with a double-sided tunneling layer structure and a preparation method thereof, overcomes the defects of the prior art, has reasonable design and effectively solves the problems mentioned in the background.
(II) in order to achieve the above purpose, the invention is realized by the following technical scheme: a partially doped cell with a double-sided tunneling layer structure comprises a substrate, a tunneling layer, a first region, a second region, a first electrode and a second electrode.
Preferably, the substrate is a silicon substrate, the tunneling layer is an ultrathin silicon oxide layer, the first region is a high-concentration boron-doped polysilicon layer, the second region is a low-concentration boron-doped polysilicon layer, the first electrode is a burning-through silver paste, and the second electrode is a non-burning-through silver paste.
The invention also provides a preparation method of the local doped battery with the double-sided tunneling layer structure, which comprises the following specific steps:
(1) Depositing a tunneling layer on a substrate by adopting a low-pressure chemical vapor deposition method;
(2) Growing a polysilicon layer on the tunneling layer, and performing low-concentration boron doping on the polysilicon layer;
(3) Mask protection is carried out on a non-metallized region on the low-concentration boron doped polysilicon layer according to the metallized pattern, then high-concentration boron doping is carried out on the metallized region, and then the non-metal region is thinned by laser to form a continuous first region and a continuous second region;
(4) And printing a burning-through type silver paste on the first area, and printing a non-burning-through type silver paste on the main grid line, wherein the burning-through type silver paste and the non-burning-through type silver paste are connected.
Preferably, in step (1), the thickness of the tunneling layer is 1-2nm.
Preferably, in the step (2), the thickness of the polysilicon layer is 100-200nm.
Preferably, in the step (2), the low concentration boron is doped to 8E19-10E19cm -3 。
Preferably, in the step (3), the high concentration boron is doped to 1E20-5E20cm -3 。
Preferably, in the step (3), the length ratio of the first region to the second region is (3-1): 1, a step of; the thickness of the second region is 10-20nm.
Preferably, in the step (4), the printing height of the burning-through silver paste is 4-10 μm and the width is 10-20 μm; the non-burn-through silver paste is 4-10 mu m, and the width is 150-200 mu m.
The invention provides a local doped battery with a double-sided tunneling layer structure and a preparation method thereof, and the local doped battery has the following beneficial effects:
1. according to the invention, the front surface of the polysilicon is subjected to low doping, the metallized region is subjected to high doping according to the metallized pattern, and the non-metallized region is thinned by laser, so that the light parasitic absorption of long waves is reduced, the short-circuit current is improved, and the conversion efficiency is improved.
2. According to the invention, the silver paste is printed according to the metallization pattern, the first electrode is the burn-through type silver paste, and the second electrode is directly connected with the first electrode, so that the interconnection effect is realized, the consumption of the silver paste is reduced, and the aim of reducing cost and improving effect is fulfilled.
Drawings
Fig. 1 is a schematic diagram of a partially doped battery according to the present invention.
In the figure: 1-substrate, 2-tunneling layer, 3-region one, 4-region two, 5-electrode one, 6-electrode two.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments.
Example 1
As shown in fig. 1, a partially doped cell with a double-sided tunneling layer structure includes a substrate 1, a tunneling layer 2, a first region 3, a second region 4, an electrode one 5, and an electrode two 6.
In this embodiment, the substrate 1 is a silicon substrate, the tunneling layer 2 is an ultrathin silicon oxide layer, the region one 3 is a high-concentration boron-doped polysilicon layer, the region two 4 is a low-concentration boron-doped polysilicon layer, the electrode one 5 is a burn-through silver paste, and the electrode two 6 is a non-burn-through silver paste.
Example 2
A preparation method of a local doped battery with a double-sided tunneling layer structure comprises the following specific steps:
(1) Depositing a tunneling layer on a substrate by adopting a low-pressure chemical vapor deposition method, and controlling the thickness of the tunneling layer to be 1-2nm.
(2) Growing a polysilicon layer on the tunneling layer, controlling the thickness of the polysilicon layer to be 100nm, and carrying out low-concentration boron doping on the polysilicon layer, wherein the low-concentration boron doping is 8E19cm -3 。
(3) Masking and protecting a non-metallized region on the low-concentration boron doped polysilicon layer according to the metallized pattern, and then carrying out high-concentration boron doping on the metallized region, wherein the high-concentration boron doping is 2E20cm -3 And thinning the nonmetallic area by using laser to form a continuous area I and a continuous area II. Wherein, the length ratio of the first area to the second area is 1:1, a step of; the thickness of the second region was 10nm.
(4) And printing a burning-through type silver paste on the first area, and printing a non-burning-through type silver paste on the main grid line, wherein the burning-through type silver paste and the non-burning-through type silver paste are connected. Wherein, the printing height of the burning-through silver paste is 4 μm and the width is 10 μm; the non-burn-through silver paste was 4 μm wide and 150 μm wide.
In this embodiment, the substrate back surface structure is identical to that of a conventional TOPCon cell.
Example 3
A preparation method of a local doped battery with a double-sided tunneling layer structure comprises the following specific steps:
(1) Depositing a tunneling layer on a substrate by adopting a low-pressure chemical vapor deposition method, and controlling the thickness of the tunneling layer to be 1-2nm.
(2) Growing a polysilicon layer on the tunneling layer, controlling the thickness of the polysilicon layer to be 150nm, and carrying out low-concentration boron doping on the polysilicon layer, wherein the low-concentration boron doping is 9E19cm -3 。
(3) Masking and protecting a non-metallized region on the low-concentration boron doped polysilicon layer according to the metallized pattern, and then carrying out high-concentration boron doping on the metallized region, wherein the high-concentration boron doping is 3E20cm -3 And thinning the nonmetallic area by using laser to form a continuous area I and a continuous area II. Wherein, the length ratio of the first area to the second area is 2:1, a step of; the thickness of the second region was 15nm.
(4) And printing a burning-through type silver paste on the first area, and printing a non-burning-through type silver paste on the main grid line, wherein the burning-through type silver paste and the non-burning-through type silver paste are connected. Wherein the printing height of the burning-through silver paste is 6 mu m, and the width is 15 mu m; the non-burn-through silver paste was 8 μm in width of 170 μm.
In this embodiment, the substrate back surface structure is identical to that of a conventional TOPCon cell.
Example 4
A preparation method of a local doped battery with a double-sided tunneling layer structure comprises the following specific steps:
(1) Depositing a tunneling layer on a substrate by adopting a low-pressure chemical vapor deposition method, and controlling the thickness of the tunneling layer to be 1-2nm.
(2) Growing a polysilicon layer on the tunneling layer, controlling the thickness of the polysilicon layer to be 200nm, and carrying out low-concentration boron doping on the polysilicon layer, wherein the low-concentration boron doping is 10E19cm -3 。
(3) Masking and protecting a non-metallized region on the low-concentration boron doped polysilicon layer according to the metallized pattern, and then carrying out high-concentration boron doping on the metallized region, wherein the high-concentration boron doping is 5E20cm -3 And thinning the nonmetallic area by using laser to form a continuous area I and a continuous area II. Wherein, the length ratio of the first area to the second area is 3:1, a step of; the thickness of the second region was 20nm.
(4) And printing a burning-through type silver paste on the first area, and printing a non-burning-through type silver paste on the main grid line, wherein the burning-through type silver paste and the non-burning-through type silver paste are connected. Wherein the printing height of the burning-through silver paste is 10 mu m, and the width is 20 mu m; the non-burn-through silver paste was 10 μm in width of 200 μm.
In this embodiment, the substrate back surface structure is identical to that of a conventional TOPCon cell.
Performance detection
1. The performance of the conventional TOPCon battery and the batteries in examples 2-4 were tested. Specific detection results are shown in the following table.
TABLE 1 detection results
| Group of | Uoc(mV) | Isc(mA) | FF(％) | Eta(％) | On-line EL yield (%) |
| Conventional battery | 713.70 | 13.669 | 83.51 | 24.759 | 94.01 |
| Example 2 | 715.08 | 13.759 | 83.57 | 24.834 | 93.85 |
| Example 3 | 715.48 | 13.852 | 83.69 | 24.938 | 93.86 |
| Example 4 | 715.37 | 13.805 | 83.62 | 24.903 | 94.04 |
The embodiments of the present invention are disclosed as preferred embodiments, but not limited thereto, and those skilled in the art will readily appreciate from the foregoing description that various extensions and modifications can be made without departing from the spirit of the present invention.
Claims (9)
1. The local doped battery with the double-sided tunneling layer structure is characterized by comprising a substrate (1), a tunneling layer (2), a first region (3), a second region (4), a first electrode (5) and a second electrode (6).
2. The locally doped battery of claim 1, wherein the substrate (1) is a silicon substrate, the tunneling layer (2) is an ultra-thin silicon oxide layer, the region one (3) is a high concentration boron doped polysilicon layer, the region two (4) is a low concentration boron doped polysilicon layer, the electrode one (5) is a burn-through silver paste, and the electrode two (6) is a non-burn-through silver paste.
3. The method for preparing a locally doped battery with a double-sided tunneling layer structure according to any one of claims 1 to 2, comprising the steps of:
(1) Depositing a tunneling layer on a substrate by adopting a low-pressure chemical vapor deposition method;
(2) Growing a polysilicon layer on the tunneling layer, and performing low-concentration boron doping on the polysilicon layer;
(3) Mask protection is carried out on a non-metallized region on the low-concentration boron doped polysilicon layer according to the metallized pattern, then high-concentration boron doping is carried out on the metallized region, and then the non-metal region is thinned by laser to form a continuous first region and a continuous second region;
(4) And printing a burning-through type silver paste on the first area, and printing a non-burning-through type silver paste on the main grid line, wherein the burning-through type silver paste and the non-burning-through type silver paste are connected.
4. The method of claim 3, wherein in step (1), the tunneling layer has a thickness of 1-2nm.
5. The method of claim 3, wherein in the step (2), the thickness of the polysilicon layer is 100-200nm.
6. The method of claim 3, wherein in step (2), the low concentration boron is doped to 8E19-10E19cm -3 。
7. The method of claim 3, wherein in step (3), the high concentration boron is doped in a range of 1E20-5E20cm -3 。
8. The method of claim 3, wherein in the step (3), the length ratio of the first region to the second region is (3-1): 1, a step of; the thickness of the second region is 10-20nm.
9. The method of claim 3, wherein in the step (4), the firing-through silver paste has a printing height of 4-10 μm and a width of 10-20 μm; the non-burn-through silver paste is 4-10 mu m, and the width is 150-200 mu m.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310745381.5A CN116632095A (en) | 2023-06-25 | 2023-06-25 | Locally doped battery with double-sided tunneling layer structure and preparation method thereof |
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| CN202310745381.5A CN116632095A (en) | 2023-06-25 | 2023-06-25 | Locally doped battery with double-sided tunneling layer structure and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117457805A (en) * | 2023-12-25 | 2024-01-26 | 正泰新能科技股份有限公司 | TOPCon battery, preparation method thereof and photovoltaic module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117457805A (en) * | 2023-12-25 | 2024-01-26 | 正泰新能科技股份有限公司 | TOPCon battery, preparation method thereof and photovoltaic module |
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