CN116631737A - Nanometer twin crystal copper micro-inductor and preparation method and application thereof - Google Patents
Nanometer twin crystal copper micro-inductor and preparation method and application thereof Download PDFInfo
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- CN116631737A CN116631737A CN202210132647.4A CN202210132647A CN116631737A CN 116631737 A CN116631737 A CN 116631737A CN 202210132647 A CN202210132647 A CN 202210132647A CN 116631737 A CN116631737 A CN 116631737A
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- 239000013078 crystal Substances 0.000 title claims abstract description 114
- 239000010949 copper Substances 0.000 title claims abstract description 95
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 87
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 30
- 238000005498 polishing Methods 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 19
- 238000004070 electrodeposition Methods 0.000 claims abstract description 14
- 238000009713 electroplating Methods 0.000 claims description 39
- RIRXDDRGHVUXNJ-UHFFFAOYSA-N [Cu].[P] Chemical compound [Cu].[P] RIRXDDRGHVUXNJ-UHFFFAOYSA-N 0.000 claims description 30
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 17
- 239000011810 insulating material Substances 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 230000003746 surface roughness Effects 0.000 claims description 7
- 239000002202 Polyethylene glycol Substances 0.000 claims description 6
- 239000003112 inhibitor Substances 0.000 claims description 6
- 229920001223 polyethylene glycol Polymers 0.000 claims description 6
- 239000011780 sodium chloride Substances 0.000 claims description 6
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 6
- 108010010803 Gelatin Proteins 0.000 claims description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 5
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 5
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 5
- 229920000159 gelatin Polymers 0.000 claims description 5
- 239000008273 gelatin Substances 0.000 claims description 5
- 235000019322 gelatine Nutrition 0.000 claims description 5
- 235000011852 gelatine desserts Nutrition 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 239000011734 sodium Substances 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 229910001431 copper ion Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 4
- WGJCBBASTRWVJL-UHFFFAOYSA-N 1,3-thiazolidine-2-thione Chemical compound SC1=NCCS1 WGJCBBASTRWVJL-UHFFFAOYSA-N 0.000 claims description 3
- 229910002555 FeNi Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
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- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 125000002769 thiazolinyl group Chemical group 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 4
- 230000001939 inductive effect Effects 0.000 claims 2
- -1 polydithio dipropane sodium Polymers 0.000 claims 1
- 239000001294 propane Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 6
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- 239000011159 matrix material Substances 0.000 abstract description 5
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 description 8
- 239000011162 core material Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 5
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- 238000000151 deposition Methods 0.000 description 5
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- 229920001721 polyimide Polymers 0.000 description 5
- 230000009471 action Effects 0.000 description 4
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- 230000008021 deposition Effects 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- OBDVFOBWBHMJDG-UHFFFAOYSA-M 3-sulfanylpropane-1-sulfonate Chemical compound [O-]S(=O)(=O)CCCS OBDVFOBWBHMJDG-UHFFFAOYSA-M 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
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- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 238000009472 formulation Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- KEAYESYHFKHZAL-OUBTZVSYSA-N sodium-24 Chemical compound [24Na] KEAYESYHFKHZAL-OUBTZVSYSA-N 0.000 description 2
- FRTIVUOKBXDGPD-UHFFFAOYSA-M sodium;3-sulfanylpropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CCCS FRTIVUOKBXDGPD-UHFFFAOYSA-M 0.000 description 2
- 241000784732 Lycaena phlaeas Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002707 nanocrystalline material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- UBILRPVXFRDZQT-UHFFFAOYSA-M sodium 1-(4,5-dihydro-1,3-thiazol-2-yl)propyl-oxido-bis(sulfanylidene)-lambda6-sulfane Chemical compound S1C(=NCC1)C(CC)S(=S)(=S)[O-].[Na+] UBILRPVXFRDZQT-UHFFFAOYSA-M 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/06—Coil winding
- H01F41/071—Winding coils of special form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
- H01F2027/2809—Printed windings on stacked layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Coils Or Transformers For Communication (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Abstract
A nanometer twin crystal copper micro-inductor and a preparation method and application thereof belong to the technical field of microelectronic devices. The invention provides a nano twin crystal copper micro-inductor. The coil structure of the nano twin crystal copper micro inductor is a double-layer structure and comprises a bottom layer and a top layer, wherein the bottom layer is nano twin crystal copper of a planar line, and the top layer is a combination of the planar line and a longitudinal column. The nano twin crystal copper microstructure is columnar crystal, the grain diameter of the columnar crystal is 1-6 mu m, the length of the columnar crystal is 2-50 mu m, twin crystal layers are arranged in the columnar crystal, and the distance between the twin crystal layers is 5-100 nm. Also provides a preparation method and application of the nano twin crystal copper micro-inductor. The invention ensures the planarization of the bottom layer coil by using a chemical mechanical polishing method. The optimized electrodeposition formula and process adopted by the top coil can fill two patterns of a planar circuit and a longitudinal pillar at the same time. The top coil column part takes the bottom coil material as a matrix to remove the transition layer by electrodeposition, and the crystal face is rapidly diffused to enable the combination to be good.
Description
Technical Field
The invention belongs to the technical field of microelectronic devices, and particularly relates to a nano twin crystal copper micro-inductor, a preparation method and application thereof.
Background
In the traditional packaging form, three passive devices of inductance, capacitance and resistance are large in size and large in number, so that the inductance and the chip are manufactured in a lamination mode under the trend of miniaturization of electronic products, and modularization of a chip power supply is achieved. The advanced packaging form of the micro-inductance technology is used, so that the area of a circuit board can be greatly saved, and the electronic product becomes lighter, thinner and smaller. The quality factor Q is the ratio of energy storage to loss per unit time, which is an important parameter for measuring the micro-inductor, and has close relation with the coil material, the magnetic core material and the design of the inductor. The higher the Q value, the higher the inductor efficiency. Since the Q value of an inductance is inversely proportional to the resistance of a metal coil material, decreasing the resistance of the coil material is one of the effective methods of increasing the Q value. As can be seen from the calculation formula of the resistance, increasing the line width and the thickness or decreasing the resistivity can reduce the resistance, but increasing the line width can affect the integration level of the micro-inductor, and meanwhile, can increase the parasitic capacitance, thereby affecting the working frequency and increasing the coupling between the inductor and the substrate. Therefore, the Q value of the micro-inductor can be effectively improved by reducing the resistivity of the material per se under the condition of the same thickness.
Graphene has very low resistivity (1 mu Ω cm), which is much lower than metallic copper and silver, and is the lowest resistivity material currently known at normal temperature. However, as the graphene has a thickness of only 0.0334nm, the resistor is too large to be independently applied to the actual on-chip inductor, so in the 'inductor on a graphene composite membrane' of the Chinese patent of the invention with the application number of CN201610355178.7, a graphene composite membrane layer formed by sequentially stacking a graphene layer, an insulating medium layer and a metal conductive layer is proposed to be used as an inductor coil material, which is beneficial to reducing the inductance resistance value and improving the quality factor. The above reports demonstrate that most researchers have focused on reducing the resistance value of coil materials by developing new coil materials.
There are always a large number of defects inside the conventional material, such as defects of grain boundaries and the like, which obstruct dislocation movement, so that the strength of the material is improved. The nanocrystalline has high material strength due to the presence of a large number of grain boundaries, but the conductivity of the nanocrystalline material is deteriorated due to the fact that electrons are easily trapped or dispersed by defects such as grain boundaries. Therefore, both the copper (equiaxed crystal) and nanocrystalline copper structures of the common structure have certain limitations, and the requirements of high strength and high conductivity cannot be met.
With the continuous development of the technology of micro-inductance, the resistance of the coil material is required to be further reduced so as to improve the performance of the micro-inductance. And as the service environment of the electronic component material becomes more severe, the material is required to have higher strength under the action of thermal stress and the like. Considering that the coil material is subjected to higher heat under the action of higher current density, the coil material is required to have better thermal stability. The solidification temperature of the photoresist is generally between 150 and 350 ℃, and the thermal stability of copper of a common equiaxed crystal structure is generally only 200 to 250 ℃, namely, the copper of the common equiaxed crystal structure is recrystallized along with the heating in the preparation process of the micro-inductor, so that the phenomena of coarsening of crystal grains, strength reduction, cracking at stress concentration positions and the like occur.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to design and provide a nano twin crystal copper micro-inductor, and a preparation method and application thereof.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
the nano twin crystal copper micro inductor is characterized in that a coil structure of the nano twin crystal copper micro inductor is of a double-layer structure and comprises a bottom layer and a top layer, wherein the bottom layer is nano twin crystal copper of a planar line, and the top layer is a combination of the planar line and a longitudinal column.
The nano twin crystal copper micro-inductor is characterized in that the nano twin crystal copper is columnar crystals, the grain diameter of the columnar crystals is 1-6 mu m, the length of the columnar crystals is 2-50 mu m, twin crystal layers are arranged in the columnar crystals, the distance between the twin crystal layers is 5-100 nm, and the resistivity of the nano twin crystal copper is 1.85-2.2 mu omega cm.
The preparation method of the nano twin crystal copper micro inductor is characterized by comprising the following steps of:
(1) Preparing a substrate 1, sputtering a seed layer 2, preparing for subsequent electroplating, spin-coating a photoresist 3 on the seed layer 2, and patterning to expose a pattern required by a bottom coil 4;
(2) Electrodepositing a bottom coil 4, polishing the surface, dissolving and removing the photoresist 3, etching the undeposited part in the seed layer 2, coating an insulating material 5, and then patterning, wherein the insulating material 5 comprises photosensitive polyimide;
(3) Preparing a magnetic core 6 on the insulating material, coating the insulating material 7, patterning, sputtering a seed layer 8, coating or sticking photoresist 9 on the seed layer, and patterning;
(4) And electrodepositing a top coil 10, polishing the surface, removing the photoresist 9, etching the undeposited part in the seed layer 8, and coating an insulating material 11 to obtain the nano twin crystal copper micro-inductor.
The preparation method is characterized in that in the step (1), a substrate 1 comprises a chip, a silicon wafer, glass, ceramic, a printed circuit board, siC or GaN, and an insulating layer is arranged on the substrate 1 to play a role in insulation protection; the seed layer 2 is of a two-layer structure, preferably one layer of the two-layer structure comprises 100nmTi or TiW, and the other layer comprises 200-400 nm of Cu, and the Ti or TiW layer mainly serves to connect the substrate and the Cu layer.
The preparation method is characterized in that the bottom layer coil 4 in the step (2) is in a plane pattern, and the process conditions of the electrodeposited bottom layer coil 4 are as follows: the method comprises the steps of adopting a phosphor copper plate or phosphor copper ball as an electroplating anode, controlling the temperature of electroplating liquid to be 20-40 ℃, and adopting a constant current or constant voltage mode to carry out direct current electroplating, wherein the removal rate of surface polishing is 6500A/min, the surface polishing time is 4-8 min, and the surface roughness is Ra 3-10 nm.
The preparation method is characterized in that the constant current has a current density of 2-5 ASD, the constant voltage has a voltage of-1 to-5V, the phosphorus content in the phosphorus copper plate or the phosphorus copper ball is 0.03-0.075 wt%, and the electroplating solution comprises 40-180 g/L of copper sulfate, 20-60 g/L of sulfuric acid, 30-100 ppm of sodium chloride, 5-500 ppm of twin crystal accelerator, 0-100 ppm of leveling agent and 0-500 ppm of accelerator.
The preparation method is characterized in that the method for preparing the magnetic core 6 in the step (3) comprises film or sheet adhesion, the material of the magnetic core 6 comprises FeNi, feNiP, feNiPRE, feCo, feCoP, coP, coZrTa, the seed layer 8 comprises two layers of metal of 100nmTi and 200-400 nmCu, and the Ti layer mainly serves as a connecting substrate and a Cu layer.
The preparation method is characterized in that the top coil 10 in the step (4) comprises a column or a plane route, and the electrodeposition process conditions are as follows: adopting a phosphor copper plate or phosphor copper ball as an electroplating anode, adopting a constant current or constant voltage mode to carry out direct current electroplating, controlling the temperature of electroplating liquid to be 20-40 ℃, and polishing the surface until the surface roughness is Ra 3-10 nm, wherein the removal rate of the surface polishing is 6500A/min and the polishing time is 4-8 min;
preferably, the phosphorus content in the phosphorus copper plate or the phosphorus copper ball is 0.03-0.075 wt%, the current density of the constant current is 1-5 ASD, and the voltage of the constant voltage is-0.5 to-4V; preferably, the plating solution comprises 30-50 g/L copper ions, 100-150 g/L sulfuric acid, 20-60 ppm chloride ions, 5-500 ppm twin accelerator, 5-500 ppm leveling agent, 5-500 ppm accelerator, 50-500 ppm inhibitor, wherein the twin accelerator comprises gelatin or thiourea, the leveling agent comprises thiazolinyl dithiopropane sodium sulfonate (SH 110) or 2-mercaptothiazoline (H1), the accelerator comprises sodium polydithio-propane sulfonate (SPS) or sodium 3-mercapto-1-propane sulfonate (MPS), and the inhibitor comprises polyethylene glycol (PEG).
The preparation method is applied to the preparation of the inductance device.
The application is characterized in that the inductance device comprises a device which applies the electromagnetic conversion principle, an advanced integrated circuit, a PCB embedded inductor and a third-generation semiconductor, and the device which preferably applies the electromagnetic conversion principle comprises a runway type inductor, a strip type inductor, a ring type inductor, a V type inductor and a transformer.
The invention uses the columnar nano twin crystal copper as the coil inductance material, firstly, the grain size of the columnar nano twin crystal copper is larger and is equivalent to that of coarse crystal copper, and the layer spacing of the twin crystal is at the nanometer level. Since a large number of point, line and surface defects exist in the grain boundary, which are not beneficial to the conduction of electrons, the grain boundary has great damage to the conductivity; the nano twin grain boundary is different from the traditional grain boundary, has weak capability of dispersing electrons, so that the damage to conductivity is small, and has the resistivity equivalent to that of the oxygen-free coarse-grain copper. Meanwhile, the nano twin crystal boundary can effectively pin dislocation, so that the nano twin crystal copper has very high strength, and simultaneously has higher strength and lower resistivity. Compared with the common equiaxed crystal copper material, the micro-inductance reliability and performance can be effectively improved.
The coil material generates joule heat in the electrifying process, the reduction of the resistivity of the nano twin crystal copper can effectively reduce the joule heat generated in the electrifying process, and the nano twin crystal copper has the characteristic of higher thermal stability (the thermal stability is up to 350 ℃), and the thermal stability of the nano twin crystal copper is far higher than that of common tissue copper (200 ℃), so the nano twin crystal copper has obvious advantages in a high-temperature-resistant service environment.
Compared with planar runway type, strip type and other inductance forms, the coil design in the solenoid type can more embody the advantages of columnar nano twin crystal copper, when the current flow direction is parallel to the inductance surface in the section view of the whole loop, columnar nano twin crystal copper grains are coarse, and the number of crystal boundaries penetrated in electron conduction is equal to that of coarse crystal copper. While when the current flow direction is perpendicular to the inductor surface, electron conduction is hardly required to pass through any grain boundaries. In addition, in the coil design of a solenoid form, a double-layer columnar nano twin crystal copper combination mode is adopted, a bottom layer coil material is columnar nano twin crystal copper of a planar circuit, the columnar nano twin crystal copper is prepared by a traditional electrodeposition nano twin crystal copper method, a top layer coil material is non-planar nano twin crystal copper material, the coil design comprises two patterns of a top layer planar circuit and a longitudinal column, additives are added into nano twin crystal copper electroplating liquid, and an electroplating process is adjusted, so that two patterns can be filled simultaneously. The optimized electroplated columnar nano twin crystal copper can be filled with two patterns of a plane and a column at the same time, and the surface is flattened by using chemical mechanical polishing after electroplating to obtain a top coil. In addition, as the nano-twin copper is preferentially oriented to the high (111) plane, the transition layer can be substantially eliminated when the nano-twin copper is deposited on the substrate with the high (111) plane preferentially oriented. Therefore, when the longitudinal columnar nano twin crystal copper is deposited, the nano twin crystal copper at the bottom layer is used as a matrix, and due to the preferential orientation of the nano twin crystal copper material at the bottom layer, a transition layer hardly exists when the columnar nano twin crystal copper at the top layer is deposited. And the diffusion coefficient of the copper (111) crystal face is 2-3 orders of magnitude higher than that of other crystal faces, the top layer and the bottom layer are mutually diffused under the action of Joule heat, and the bonding interface is firmer.
The design of the inductor structure better utilizes the characteristics of low resistivity and high thermal stability of nano twin crystal copper, not only can help to improve the performance of the micro inductor, but also has better guarantee on the reliability.
Compared with the prior art, the invention has the following beneficial effects:
1. the nano twin crystal copper micro inductor reduces the inductance resistance value and improves the inductance quality factor. The nano twin crystal copper micro-inductor has much higher thermal stability than the common copper micro-inductor, and the low resistivity can effectively reduce the joule heat, thereby being beneficial to the high temperature service reliability of the micro-inductor. In the preparation process of the micro-inductor, the characteristic of nano twin crystal copper pattern filling is combined, and the preparation process of the micro-inductor is designed.
2. And the planarization of the bottom layer coil is ensured by using a chemical mechanical polishing method, and the problem of large surface roughness of nano twin crystal copper is solved. The optimized electrodeposition formula and process adopted by the top coil ensure that two patterns of a plane and a column can be filled at the same time. The longitudinal pillar part of the top coil uses the bottom coil material as a matrix to carry out electrodeposition, and the crystal face fast diffusion ensures good combination while eliminating the transition layer.
Drawings
Fig. 1 is a schematic diagram of the micro-inductor structure obtained in embodiment 1;
FIG. 2 is a flow chart of a micro-inductor process;
FIG. 3 is a microstructure morphology of the nano-twin copper coil material of example 1;
FIG. 4 is a microstructure morphology (a generally equiaxed grain structure) of other copper materials obtained in comparative example 1;
fig. 5 is a graph of the comparison of electrodeposited nano twin copper resistivity with ordinary copper resistivity.
Detailed Description
The invention will be further described with reference to the drawings and examples.
Example 1:
the structure of the nano twin crystal copper micro-inductor is shown in fig. 1, and embodiment 1 is a solenoid type micro-inductor, wherein a coil material surrounds a magnetic core material in a spiral form, the coil material is of a double-layer structure when seen from a B-B coil section, a bottom coil is of a planar circuit pattern, and a top coil is of an n-shaped structure and comprises a top planar circuit and a longitudinal pillar. The microstructure in the bottom coil material and the top coil material is a nanometer twin crystal layer of columnar crystal, and the nanometer twin crystal boundary is in the horizontal direction (parallel to the surface of the micro inductor). The microstructure can fully utilize the advantages of nanometer twin crystals and reduce the loop resistance of the whole coil. The process flow diagram is shown in figure 2.
Step 1: firstly, preparing a substrate 1, wherein the substrate 1 can be a common matrix of integrated circuit industries such as chips, silicon chips, glass, ceramics, printed circuit boards, third-generation semiconductors such as SiC and GaN, and the like, and the common matrix is generally provided with an insulating layer for insulating protection. A seed layer 2 is sputtered on the substrate 1, which is generally two layers of metal of 100nmTi, tiW, etc. and Cu of 200-400 nm, and the Ti or TiW layer mainly serves to connect the substrate with the Cu layer, in preparation for subsequent electroplating.
Step 2: photoresist 3 is spin-coated on the seed layer 2 and patterned to expose the pattern required by the bottom layer coil.
Step 3: the electrodeposited bottom coil 4 is in a plane pattern, and the electrodeposited formula and the process are as follows: 40-180 g/L of copper sulfate, 20-60 g/L of sulfuric acid, 30-100 ppm of sodium chloride, 5-500 ppm of twin crystal accelerator, 0-100 ppm of leveling agent and 0-500 ppm of accelerator; the process conditions of electrodeposition are: the electroplating anode adopts a phosphor copper plate or phosphor copper ball, wherein the P content in phosphor copper is 0.03-0.075 wt%, the plating solution temperature is 20-40 ℃, the direct current electroplating mode is adopted, the current density is 2-5 ASD when constant current is adopted, and the voltage is-1-5V when constant voltage electroplating is adopted.
Step 4: and carrying out surface chemical mechanical polishing on the obtained coil 4, wherein the removal rate is 6500A/min, the polishing time is 4-8 min, and the surface roughness after polishing is Ra 3-10 nm. The photoresist 3 is dissolved and removed, the part of the seed layer 2 where no deposition exists is etched, and the photosensitive polyimide 5 is recoated as an insulating material and patterned.
Step 5: the magnetic core 6 is prepared on the insulating material 5 mainly by adopting a mode of sticking a film and a sheet, and the magnetic core material can be made of soft magnetic materials such as FeNi, feNiP, feNiPRE, feCo, feCoP, coP, coZrTa.
Step 6: photosensitive polyimide 7 is coated as an insulating material and patterned.
Step 7: a seed layer 8, typically of two layers of 100nmTi and 200-400 nm Cu, is sputtered on the insulating material 7, the Ti layer acting primarily to connect the substrate with the Cu layer. And a photoresist 9 is coated or stuck on the seed layer 8 for patterning.
Step 8: the top layer coil 10 is electrodeposited, the top layer coil comprises a longitudinal pillar and a plane line, and the electrodeposition formulation and the process are as follows: 30-50 g/L of copper ions, 100-150 g/L of sulfuric acid, 20-60 ppm of chloride ions, 5-500 ppm of twin accelerator, 5-500 ppm of leveling agent, 5-500 pm of accelerator and 50-500 ppm of inhibitor. Twin accelerators include, but are not limited to, gelatin or thiourea, leveling agents include, but are not limited to, sodium thiazolinyl dithiopropane sulfonate (SH 110) or 2-mercaptothiazoline (H1), accelerators include, but are not limited to, sodium polydithio-propane sulfonate (SPS) or sodium 3-mercapto-1-propane sulfonate (MPS), and inhibitors include, but are not limited to, polyethylene glycol (PEG). The process conditions of electrodeposition are: the electroplating anode adopts a phosphor copper plate or phosphor copper ball, wherein the P content in phosphor copper is 0.03-0.075 wt%, the plating solution temperature is 20-40 ℃, the direct current electroplating mode is adopted, the current density is 1-5 ASD when constant current is adopted, and the voltage is-0.5-4V when constant voltage electroplating is adopted.
And 9, carrying out surface chemical mechanical polishing on the obtained coil 10, wherein the removal rate is 6500A/min, the polishing time is 4-8 min, and the surface roughness after polishing is Ra 3-10 nm. The photoresist 9 is removed and the portion of the seed layer 8 where no deposition is performed is etched, and polyimide 11 is coated as an insulating protective material. The microstructure morphology of the nano twin crystal copper coil material is shown in fig. 3, and the electrodeposited nano twin crystal copper in step 3 and step 8 in example 1 is a columnar crystal structure, and the inside of the columnar crystal is a high-density nano twin crystal boundary in the horizontal direction.
It should be noted that the connection between the top coil and the bottom coil is a key part of the design, and directly affects the inductance performance. The transition layer can be substantially eliminated when nano twin copper is deposited on a high (111) plane preferred orientation substrate. In the design, the characteristics of nano twin crystal copper deposition are fully considered, the nano twin crystal copper material of the top layer coil is directly prepared on the surface of the bottom layer coil by electrodeposition, the nano twin crystal copper of the bottom layer is used as a deposition substrate of the top layer coil, and when the top layer coil is deposited, the transition layer of the top layer coil material is eliminated by virtue of epitaxial growth due to the higher (111) preferred orientation of the bottom layer coil material. And the diffusion coefficient of the (111) crystal face of copper is 2-3 orders of magnitude higher than that of other crystal faces, the top layer and the bottom layer coil material bonding interface are mutually diffused under the action of Joule heat, and the bonding interface is firmer. Therefore, the design ensures the uniformity of the structure of the coil materials and good contact between the two layers of coil materials.
Example 2:
compared with the embodiment 1, only the composition of the electroplating solution in the step 3 is changed, so that the nano twin copper coil material is prepared, wherein the composition of the electroplating solution is as follows:
electroplating solution composition: 40-180 g/L of copper sulfate, 20-60 g/L of sulfuric acid, 30-100 ppm of sodium chloride, 5-500 ppm of gelatin, 0-100 ppm of leveling agent and 0-500 ppm of accelerator; the electroplating anode adopts a phosphor copper plate or phosphor copper ball, wherein the P content in phosphor copper is 0.03-0.075 wt%, the plating solution temperature is 30 ℃, and the current density is 4ASD by adopting a direct current electroplating mode.
The microstructure of the nano twin copper coil material prepared in the embodiment 2 consists of columnar crystals, and the crystals contain high-density nano twin crystal boundaries, and the average resistivity of the nano twin crystal boundaries is 1.89 mu omega cm.
Example 3:
compared with the embodiment 1, only the composition of the electroplating solution in the step 8 is changed, so that the nano twin copper coil material is prepared, wherein the composition of the electroplating solution is as follows:
electroplating solution composition: 30-50 g/L of copper ions, 100-150 g/L of sulfuric acid, 20-60 ppm of chloride ions, 60-100 ppm of gelatin, 15-50 ppm of H, 5-20 ppm of SPS and 5-100 ppm of PEG. The plating anode adopts a phosphorus copper plate, wherein the P content in the phosphorus copper is 0.03-0.075 wt%, the plating solution temperature is 25 ℃, a direct current plating mode is adopted, and the current density is 3ASD.
The microstructure of the nano twin crystal copper coil material prepared in the embodiment 3 consists of columnar crystals, and the crystals contain high-density nano twin crystal boundaries, and the average resistivity of the nano twin crystal boundaries is 1.91 mu omega cm.
Comparative example 1:
in comparison with example 1, only steps 3, 4, 8 were changed, the remaining steps being identical. The modification steps are as follows:
step 3: the electrodeposited bottom coil 4 is in a plane pattern, and the electrodeposited formula and the process are as follows: the electroplating solution of the electrodeposited coil material comprises 190-200 g/L of copper sulfate, 80-100 g/L of sulfuric acid, 50-100 ppm of sodium chloride and 24-38 ppm of commercial additive; the process conditions of electrodeposition are: the electroplating anode adopts a phosphor copper plate or phosphor copper ball, wherein the P content in phosphor copper is 0.03-0.075 wt%, the plating solution temperature is 20-40 ℃, the direct current electroplating mode is adopted, the current density is 2-5 ASD when constant current is adopted, and the voltage is-1-5V when constant voltage electroplating is adopted.
Step 4: the photoresist 3 is directly dissolved and removed after electroplating without chemical mechanical polishing, the undeposited part of the seed layer 2 is etched, and the photosensitive polyimide 5 is coated again as an insulating material and patterned.
Step 8: the top layer coil 10 is electrodeposited, the top layer coil comprises pillars and planar circuits, and the electrodeposition formulation and process are: 190-200 g/L of acid copper, 80-100 g/L of sulfuric acid, 50-100 ppm of sodium chloride and 24-38 ppm of commercial additive. The electroplating process parameters are as follows: the plating solution temperature was 25℃and the current density was 3ASD.
The copper coil material of the general structure prepared in the comparative example 1 consists of equiaxed crystals, twin crystal boundaries in the crystal grains are sparse, and the average resistivity is 2.30 mu omega cm. The microstructure morphology of the other copper materials obtained in comparative example 1 is shown in fig. 4, and the copper with a common structure is obtained by depositing the wafer-level plating solution which is currently used commercially, wherein the microstructure is an equiaxed crystal, and only a small amount of irregular twin crystal boundaries exist in the microstructure.
The electrodeposited nano twin copper resistivity obtained in example 1, in which the nano twin copper resistivity is 1.9 μΩ·cm and the general copper resistivity is 2.3 μΩ·cm, was compared to the general copper resistivity, and as a result, as shown in fig. 5, the nano twin grain boundaries obtained by electrodeposition were much higher than those of the general structure copper.
Claims (10)
1. The nano twin crystal copper micro inductor is characterized in that a coil structure of the nano twin crystal copper micro inductor is of a double-layer structure and comprises a bottom layer and a top layer, wherein the bottom layer is nano twin crystal copper of a planar line, and the top layer is a combination of the planar line and a longitudinal column.
2. The nano twin crystal copper micro inductor as claimed in claim 1, wherein the nano twin crystal copper is columnar crystal, the grain diameter of the columnar crystal is 1-6 μm, the length is 2-50 μm, twin crystal layers are arranged in the columnar crystal, and the interval between the twin crystal layers is 5-100 nm.
3. The method for preparing the nano twin crystal copper micro inductor according to claim 1, which is characterized by comprising the following steps:
preparing a substrate (1), sputtering a seed layer (2), spin-coating a photoresist (3) on the seed layer (2), and patterning;
(2) Electrodepositing a bottom coil (4), polishing the surface, dissolving and removing the photoresist (3), etching the undeposited part in the seed layer (2), coating an insulating material (5), and then patterning;
(3) Preparing a magnetic core (6) on the insulating material, coating the insulating material (7) and patterning, sputtering a seed layer (8), and coating or sticking a photoresist (9) on the seed layer and patterning;
(4) And electrodepositing a top coil (10), polishing the surface, removing the photoresist (9), etching the undeposited part in the seed layer (8), and coating an insulating material (11) to obtain the nano twin crystal copper micro-inductor.
4. A method of manufacturing as claimed in claim 3, characterized in that in step (1) the substrate (1) comprises a chip, a silicon wafer, glass, ceramic, a printed circuit board, siC or GaN, the substrate (1) having an insulating layer thereon, the seed layer (2) being of a two-layer structure, preferably one of the two-layer structure comprising 100nmTi or TiW and the other layer comprising 200-400 nm Cu.
5. A method according to claim 3, wherein the bottom layer coil (4) in the step (2) is a planar pattern, and the process conditions of the electrodeposited bottom layer coil (4) are as follows: the method comprises the steps of adopting a phosphor copper plate or phosphor copper ball as an electroplating anode, controlling the temperature of electroplating liquid to be 20-40 ℃, and adopting a constant current or constant voltage mode to carry out direct current electroplating, wherein the removal rate of surface polishing is 6500A/min, the surface polishing time is 4-8 min, and the surface roughness is Ra 3-10 nm.
6. The method according to claim 5, wherein the constant current has a current density of 2 to 5ASD, a constant voltage of-1 to-5V, a phosphorus content of 0.03 to 0.075wt.% in the phosphor copper plate or phosphor copper ball, and the plating solution comprises 40 to 180g/L of copper sulfate, 20 to 60g/L of sulfuric acid, 30 to 100ppm of sodium chloride, 5 to 500ppm of a twin accelerator, 0 to 100ppm of a leveler, and 0 to 500ppm of an accelerator.
7. A method of manufacturing a magnetic core (6) as claimed in claim 3, characterized in that the method of manufacturing a magnetic core (6) in step (3) comprises film or sheet bonding, the material of the magnetic core (6) comprises FeNi, feNiP, feNiPRE, feCo, feCoP, coP, coZrTa, and the seed layer (8) comprises two layers of metal of 100nmTi and 200-400 nmCu.
8. A method according to claim 3, characterized in that the top layer coil (10) in step (4) comprises a longitudinal pillar or planar route, the process conditions of the electrodeposition being: adopting a phosphor copper plate or phosphor copper ball as an electroplating anode, adopting a constant current or constant voltage mode to carry out direct current electroplating, controlling the temperature of electroplating liquid to be 20-40 ℃, and polishing the surface until the surface roughness is Ra 3-10 nm, wherein the removal rate of the surface polishing is 6500A/min and the polishing time is 4-8 min;
preferably, the phosphorus content in the phosphorus copper plate or the phosphorus copper ball is 0.03-0.075 wt%, the current density of the constant current is 1-5 ASD, and the voltage of the constant voltage is-0.5 to-4V; preferably, the electroplating solution comprises 30-50 g/L of copper ions, 100-150 g/L of sulfuric acid, 20-60 ppm of chloride ions, 5-500 ppm of twin crystal accelerator, 5-500 ppm of leveling agent, 5-500 ppm of accelerator, 50-500 ppm of inhibitor, wherein the twin crystal accelerator comprises gelatin or thiourea, the leveling agent comprises thiazolinyl dithiopropane sodium sulfonate or 2-mercaptothiazoline, the accelerator comprises polydithio dipropane sodium sulfonate or 3-mercapto-1-propane sodium sulfonate, and the inhibitor comprises polyethylene glycol.
9. Use of the preparation method according to any of claims 3-8 for the preparation of an inductive device.
10. Use according to claim 9, characterized in that the inductive device comprises the fabrication of devices using electromagnetic conversion principles, advanced integrated circuits, PCB embedded inductors, third generation semiconductors, preferably devices using electromagnetic conversion principles including racetrack inductors, bar inductors, ring inductors, V-inductors and transformers.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210132647.4A CN116631737A (en) | 2022-02-14 | 2022-02-14 | Nanometer twin crystal copper micro-inductor and preparation method and application thereof |
| PCT/CN2022/140101 WO2023151389A1 (en) | 2022-02-14 | 2022-12-19 | Nanotwinned crystal copper microinductor, and preparation method therefor and application thereof |
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| CN202210132647.4A CN116631737A (en) | 2022-02-14 | 2022-02-14 | Nanometer twin crystal copper micro-inductor and preparation method and application thereof |
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| CN1635637A (en) * | 2003-12-29 | 2005-07-06 | 北京大学 | Three dimensional integrated inductance and manufacturing method thereof |
| JP5048155B1 (en) * | 2011-08-05 | 2012-10-17 | 太陽誘電株式会社 | Multilayer inductor |
| CN102789967B (en) * | 2012-08-16 | 2014-09-24 | 中国电子科技集团公司第五十五研究所 | Manufacturing method for soft magnetic core spiral micro-inductor |
| CN103325765A (en) * | 2013-06-21 | 2013-09-25 | 江阴长电先进封装有限公司 | Silicon substrate inductance structure with magnetic core |
| CN107331656A (en) * | 2017-08-16 | 2017-11-07 | 华进半导体封装先导技术研发中心有限公司 | It is a kind of for core inductance and its manufacture method integrated on piece |
| WO2020123322A2 (en) * | 2018-12-10 | 2020-06-18 | Lam Research Corporation | Low temperature direct copper-copper bonding |
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