CN116626796B - Large-angle incidence range long-wave pass filter and preparation method thereof - Google Patents
Large-angle incidence range long-wave pass filter and preparation method thereof Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0012—Optical design, e.g. procedures, algorithms, optimisation routines
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
- G02B5/288—Interference filters comprising deposited thin solid films comprising at least one thin film resonant cavity, e.g. in bandpass filters
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Abstract
The invention belongs to the technical field of optical film preparation, and discloses a long-wave pass filter with a large angle incidence range and a preparation method thereof. The long-wave pass filter comprises a substrate, a first film structure, a second film structure and a diamond film. According to the invention, the diamond film is arranged between the composite layer formed by the first film structure and the substrate and the second film structure, and can replace a cementing material after special treatment, and the diamond film has excellent optical characteristics, so that the problem of optical characteristic reduction of the long-wave pass filter caused by using the cementing material can be avoided; meanwhile, the diamond film without the micropore structure is arranged on the surface of the filter, so that the mechanical strength of the long-wave pass filter can be obviously improved on the basis of not affecting the optical characteristics of the long-wave pass filter, and the long-wave pass filter can be ensured to be normally used in a severe environment.
Description
Technical Field
The invention relates to the technical field of optical film preparation, in particular to a long-wave pass filter with weather resistance and a large angle incidence range, and a preparation method and application thereof.
Background
The long-pass filter is a light-splitting element commonly used in optical systems, and is used for transmitting light with a wavelength higher than a specific wavelength, and for cutting light with a wavelength lower than the specific wavelength. The long-wave pass filter is widely applied to infrared cameras and multispectral imagers of remote sensing systems such as natural disasters, resource census and the like, and is mainly used for meteorological, geological imaging and spectral analysis observation. In the technical planning of natural disaster remote sensing satellites in China, research and development requirements are also put forward for devices of the long-wave pass filters. Because of the importance and special requirements of the application of the long-wave pass filter, and the complex film system structure and plating process, the long-wave pass filter has been the focus of research in recent years. In order to obtain high-quality images, the remote sensing system has high requirements on the long-wave pass filter, such as high average transmissivity of a transmission area, deep cut-off depth of a suppression zone and good transition characteristics, and can adapt to severe space and ground environments.
The development of the long-wave pass filter with a large incidence angle range is mainly realized by utilizing the intrinsic absorption effect of the material. Because of the long-wave-pass characteristic of the material from opaque to transparent in the intrinsic absorption limit, the material can be used as a substrate or a film material in the practical filter design. The Chinese patent No. 114035256A discloses a long-wave pass filter with a double-layer substrate to solve the problem that the mechanical strength of the obtained long-wave pass filter can not meet the requirement. Although the glass has the excellent effects of high transmittance and high cut-off, the mechanical strength of the film on the surface of the substrate is especially poor, and the glass cannot be used in a severe environment. The long-wave pass filter with the double-layer substrate needs to use colloid, so that the spectrum characteristic of the obtained long-wave pass filter can be influenced, the dosage of the colloid is strictly controlled, and the complexity of the preparation process is improved. In addition, the existing researches are mostly to improve the spectral characteristics of the long-wave pass filter by optimizing the optical thickness of the film layer, and there is a blank for the distribution of the film layer structure and the optimization of the film layer structure. Therefore, there is a need in the art to develop a long-pass filter with weatherability over a wide range of incidence angles.
Disclosure of Invention
In view of the above, the invention provides a long-wave pass filter with weather resistance and a large angle incidence range, and a preparation method and application thereof, so as to solve the problems that the existing long-wave pass filter substrate has poor mechanical strength and cannot be used in severe environments.
In order to achieve the above purpose, the invention adopts the following technical scheme:
the invention provides a long-wave pass filter with weather resistance and a large angle incidence range, which comprises a substrate, a first film structure, a second film structure and a diamond film; the substrate is a silicon wafer; the first film structure comprises a first optical film and a diamond film, wherein the first optical film is composed of a high refractive index material and a low refractive index material; the second film structure includes a second optical film composed of a high refractive index material, a third optical film composed of a high refractive index material and a low refractive index material, and a diamond thin film.
Preferably, the long-wave pass filter is provided with a diamond film, a first optical film, a substrate, a diamond film, a second optical film, a third optical film, and a diamond film in this order.
Preferably, the first film structure includes C/aHbL/S, wherein C is a diamond thin film, H is a high refractive index material, L is a low refractive index material, S is a substrate, and a and b are optical thicknesses of 1/4 wavelength.
Preferably, the second film structure comprises C/cH/dHeL/C, wherein C is a diamond film, H is a high refractive index material, L is a low refractive index material, and C, d, and e are optical thicknesses of 1/4 wavelength.
Preferably, the high refractive index material is Ge; the low refractive index material is ZnS.
The invention also provides a preparation method of the long-wave pass filter with weather resistance and a large angle incidence range, which comprises the following steps:
depositing a diamond film on the lower surface of the substrate, and sequentially preparing a second optical film and a third optical film after the deposition is completed; preparing a first optical film on an upper surface of a substrate; depositing diamond films on the surfaces of the first optical film and the second optical film; obtaining the long-wave pass filter.
Preferably, the lower surface of the substrate is pretreated before the diamond film is deposited on the lower surface of the substrate; the pretreatment steps are as follows: polishing the lower surface of the substrate with diamond powder; the grain diameter of the diamond powder is 0.2-0.4 mu m; the grinding time is 30-40 min.
Preferably, the carbon sources used for the deposition are methane, ethanol and anisole; the volume ratio of the methane to the ethanol to the anisole is 2-4:2-3:0.02-0.05; the flow rate of the carbon source is 40-60 sccm; during deposition, the temperature of the lower surface of the substrate is 700-800 ℃; the air pressure of the deposition is 5-7 kPa, and the deposition time is 1-2 hours.
Preferably, when preparing the first optical film, the second optical film, and the third optical film, the preparation steps are: constructing an optical film system structure; calculating and optimizing the transmittance of the optical film system structure at the reference wavelength to obtain an optimized optical film system structure; and preparing a film with the optimized optical film system structure to obtain the optical film.
The invention also provides application of the long-wave pass filter with weather resistance and a large angle incidence range in an optical system.
Compared with the prior art, the invention has the following beneficial effects:
the long-wave pass filter obtained by the invention filters short-wave light in a specific range by utilizing the absorption characteristic of the silicon wafer on the premise of ensuring high transmittance, thereby realizing the transmittance of high specific wavelength and the cutoff rate of high specific wavelength; meanwhile, the diamond film can improve the weather resistance of the obtained long-wave pass filter on the basis of exhibiting excellent transmittance, so that the long-wave pass filter can be used in severe environments, and the application range of the long-wave pass filter is widened.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of the overall structure of a long-wave pass filter with weather resistance and a large angle incidence range according to the present invention.
Detailed Description
The invention provides a long-wave pass filter with weather resistance and a large angle incidence range, which comprises a substrate, a first film structure, a second film structure and a diamond film; the substrate is a silicon wafer; the first film structure comprises a first optical film and a diamond film, wherein the first optical film is composed of a high refractive index material and a low refractive index material; the second film structure includes a second optical film composed of a high refractive index material, a third optical film composed of a high refractive index material and a low refractive index material, and a diamond thin film.
In the present invention, the long-wave pass filter is provided with a diamond film, a first optical film, a substrate, a diamond film, a second optical film, a third optical film, and a diamond film in this order.
In the present invention, the thickness of the substrate is preferably 0.2 to 0.25mm, more preferably 0.23 to 0.24mm.
In the invention, the first film structure comprises C/aHbL/S, wherein C is a diamond film, H is a high refractive index material, L is a low refractive index material, S is a substrate, and a and b are optical thicknesses of 1/4 wavelength.
In the present invention, the second film structure includes C/cH/dHeL/C, where C is a diamond thin film, H is a high refractive index material, L is a low refractive index material, and C, d, and e are optical thicknesses of 1/4 wavelength.
In the present invention, the high refractive index material is preferably Ge; the low refractive index material is preferably ZnS.
The invention also provides a preparation method of the long-wave pass filter with weather resistance and a large angle incidence range, which comprises the following steps:
depositing a diamond film on the lower surface of the substrate, and sequentially preparing a second optical film and a third optical film after the deposition is completed; preparing a first optical film on an upper surface of a substrate; depositing diamond films on the surfaces of the first optical film and the second optical film; obtaining the long-wave pass filter.
In the invention, the lower surface of the substrate is pretreated before the diamond film is deposited on the lower surface of the substrate; the pretreatment steps are as follows: polishing the lower surface of the substrate with diamond powder; the particle diameter of the diamond powder is preferably 0.2 to 0.4. Mu.m, more preferably 0.3. Mu.m; the time for the grinding is preferably 30 to 40 minutes, more preferably 32 to 38 minutes.
In the present invention, the carbon source used for the deposition is preferably methane, ethanol, or anisole; the volume ratio of the methane, the ethanol and the anisole is preferably 2-4:2-3:0.02-0.05, and more preferably 3:2.2-2.5:0.03-0.04; the flow rate of the carbon source is preferably 40 to 60sccm, more preferably 50 to 55sccm; during deposition, the temperature of the lower surface of the substrate is preferably 700-800 ℃, and more preferably 750-780 ℃; the gas pressure for the deposition is preferably 5 to 7kPa, more preferably 6kPa; the deposition time is preferably 1 to 2 hours, more preferably 70 to 100 minutes.
In the present invention, the deposition is performed under hydrogen gas, and the flow rate of hydrogen gas is preferably 20 to 30sccm, more preferably 22 to 25sccm.
The deposition according to the invention is carried out under hydrogen gas conditions, wherein hydrogen gas has the following three functions: firstly, the hydrogen can reduce carbon source gas to prevent graphite phase; secondly, the hydrogen is helpful to the dissociation of the carbon atom gas and the opening of the carbon hydrogen bond; thirdly, the hybrid orbit has the function of maintaining and stabilizing the hybrid orbit.
In the invention, after the deposition of the diamond film connected with the substrate is completed, calcining the deposited product; the temperature of the calcination is preferably 600 to 800 ℃, and more preferably 700 to 750 ℃; the calcination time is preferably 20 to 50 minutes, more preferably 30 to 40 minutes.
In the growth process of the diamond film, under the action of hydrogen, the invention generates CH by methane 3 And H, dimethyl ether to CH 3 And O, ethanol generates CH 3 、CH 2 And OH, most of which is CH 3 Forming diamond phase, CH 2 And a small part CH 3 And forming a non-diamond phase, wherein the generated H and O etch the non-diamond phase on the substrate to a certain extent, and the formed diamond film can have a uniform pore structure through subsequent calcination. The diamond film with the pore structure has excellent bonding strength with the pretreated substrate, and the second optical film formed on the diamond film has excellent bonding strength due to the existence of the pore structure. On the basis of avoiding using colloid, the mechanical strength of the obtained long-wave pass filter can be improved.
According to the invention, the two layers of diamond films on the outermost layer do not need to be calcined after being deposited, so that the integrity of the deposited diamond films can be ensured, micropores are avoided, and the mechanical strength of the obtained long-wave pass filter is improved.
In the present invention, when preparing the first optical film, the second optical film, and the third optical film, the preparation steps are: constructing an optical film system structure; calculating and optimizing the transmittance of the optical film system structure at the reference wavelength to obtain an optimized optical film system structure; and preparing a film with the optimized optical film system structure to obtain the optical film.
In the present invention, the calculation optimizes the optical film system structure according to the following formula:
the long-wave pass filter optical film system structure is a symmetrical periodic film system:
or->
The equivalent refractive index E of the long-wave pass filter optical film system structure is as follows:
cut-off depth T of long-wave pass filter optical film system structure r The method comprises the following steps:
cut-off band center wavelength lambda of long-wave pass filter optical film system structure 0 The method comprises the following steps:
wherein H and L each independently represent lambda 0 High/4 optical thickness low refractive index film, lambda c To cut off wavelength, n L And n H Refractive index of L and H film, respectively, n 0 And n s Refractive index, delta, of the incident medium and substrate, respectively H/L The phase thickness of the H or L film layer is expressed, and m is the number of symmetrical film system cycles.
In the present invention, the preparation of the first, second and third optical films includes the steps of:
(1) Vacuum chamber cleaning: firstly, cleaning all components of a vacuum chamber of a film plating machine, namely a protective screen, an electrode, a baffle plate and a tool by using a sand blasting machine; the cleaning standard is as follows: after cleaning, the surface of the cleaned piece cannot be attached with a film layer;
(2) Cleaning before film coating: wiping the surface of the vacuum chamber with a mixed solution of ethanol and diethyl ether, and checking the surface by using a 'gas-cutting method' until the surface is free of greasy dirt, dust particles and scratches;
(3) Vacuum chamber preparation: placing the high refractive index material and the low refractive index material into an electron gun crucible, blowing the surface of the substrate by using an ear-washing ball, and immediately closing the vacuum chamber door;
(4) Plating of optical film: maintaining the vacuum degree in the vacuum chamber to be more than or equal to 2 multiplied by 10 -3 Pa, turning on a rotary switch, rotating a working frame, turning on baking, setting baking temperature, and then sequentially turning on an electron gun deflection power supply, a filament power supply and gun high voltage; opening an ion source, cleaning a substrate for 5min by using an ion beam, wherein the ion source adopts argon as working gas, the purity of the working gas is more than or equal to 99.995%, the gas flow is kept at 18-22 sccm, and performing film deposition by using an ion beam assisted electron beam evaporation method;
(5) After the vapor deposition of each layer of optical film is finished, vacuum is more than or equal to 2 multiplied by 10 -3 Pa, cooling to 70-90 ℃, closing the vacuumizing system, and taking out the product after the vacuum chamber is cooled to room temperature;
(6) Repeating the steps (1) to (5) to prepare a first optical film, a second optical film and a third optical film, respectively.
In the preparation step (2) of the first optical film, the second optical film and the third optical film, the specific steps of wiping are as follows: sequentially wiping the surface of the vacuum chamber by using absorbent gauze and cotton cloth dipped with mixed solution of ethanol and diethyl ether; the volume ratio of the ethanol to the diethyl ether is 1-2:1-3.
In the preparation step (4) of the first optical film, the second optical film and the third optical film, the substrate is heated before vapor deposition; the heating temperature is preferably 240 to 260 ℃, and more preferably 250 to 255 ℃; the heating time is preferably 1 to 2 hours, more preferably 70 to 80 minutes.
In the preparation step (4) of the first optical film, the second optical film and the third optical film, the parameters at the time of vapor deposition of the high refractive index material, that is, ge, are: the Ge consumption is 120g, the argon gas flow of the ion source is 18sccm, the oxygen gas flow is 25sccm, the ion source beam pressure is 180-250V, the ion source beam current is 80-120V, and the deposition rate is controlled to be 0.3nm/s; the parameters for evaporating the low refractive index material, namely ZnS, are as follows: the using amount of ZnS is 200g, the argon gas flow of the ion source is 20sccm, the oxygen gas flow is 14sccm, the beam pressure of the ion source is 180-220V, the beam flow of the ion source is 80-110V, and the deposition rate is 0.5nm/s.
The invention also provides application of the long-wave pass filter with weather resistance and a large angle incidence range in an optical system.
The technical solutions provided by the present invention are described in detail below with reference to examples, but they should not be construed as limiting the scope of the present invention.
Since the long pass filter of the large angle incidence range is required to ensure that the 1064nm spectrum radiation in the incidence angle range of 0-48 deg. enters the corresponding detector, and at the same time the 400-930 nm spectrum is filtered out, the reference wavelength in the following examples is 1064nm.
Example 1
(1) Cleaning a substrate: ultrasonically cleaning a silicon wafer with the thickness of 0.2mm, spin-drying, drying the spin-dried silicon wafer, finally checking on a cleaning table, and putting the silicon wafer into the next step after the silicon wafer is checked to be qualified;
(2) Deposition of diamond film: grinding the lower surface of a silicon wafer for 30min by using diamond powder with the grain diameter of 0.2 mu m, placing the pretreated silicon wafer in a reaction chamber of a chemical vapor deposition device, keeping the surface temperature of the silicon wafer at 750 ℃, introducing mixed gas of methane, ethanol and anisole with the volume ratio of 3:0.5:0.2 at the flow rate of 30sccm, introducing hydrogen at the flow rate of 20sccm, performing diamond film deposition for 1h, keeping the deposition air pressure at 5kPa, and calcining the product at 700 ℃ for 30min after the deposition is finished to obtain the silicon wafer deposited with the diamond film;
(3) Setting the large angle incidence range and the reference wavelength: the incident angle range is 0-48 degrees, and the reference wavelength is 1064nm; constructing a first film system structure; calculating and optimizing the transmittance of the first film system structure at the reference wavelength to obtain an optimized first film system structure, wherein the optimized first film system structure comprises the following steps: C/0.53H1.35L/S;
(4) Processing the deposited vacuum chamber: firstly, cleaning all components of a vacuum chamber of a film plating machine, namely a protective screen, an electrode, a baffle plate and a tool by using a sand blasting machine; the cleaning standard is as follows: after cleaning, the surface of the cleaned piece cannot be attached with a film layer; secondly, wiping the surface of the vacuum chamber by using a mixed solution of ethanol and diethyl ether, and checking the surface by using a gas-cutting method until the surface is free of greasy dirt, dust particles and scratches; putting 120g gGe and 200g ZnS into an electron gun crucible again, blowing the surface, on which the diamond film is not deposited, of the silicon wafer with the diamond film surface deposited by using a ear-washing ball, and immediately closing the vacuum chamber door;
(5) Plating of the first optical film: maintaining the vacuum degree in the vacuum chamber to be more than or equal to 2 multiplied by 10 -3 Pa, turning on a rotary switch, rotating a working frame, turning on baking, setting baking temperature, and then sequentially turning on an electron gun deflection power supply, a filament power supply and gun high voltage; opening an ion source, cleaning the substrate for 5min by using an ion beam, wherein the ion source adopts argon as working gas, the purity of the working gas is more than or equal to 99.995%, the gas flow is kept at 18-22 sccm, and depositing ZnS by using an ion beam assisted electron beam evaporation method; parameters for maintaining vapor deposition are: the argon gas flow of the ion source is 20sccm, the oxygen gas flow is 14sccm, the beam pressure of the ion source is 180V, the beam flow of the ion source is 80V, and the deposition rate is 0.5nm/s; vacuum is more than or equal to 2 multiplied by 10 after vapor deposition is finished - 3 Pa, cooling to 70 ℃, closing the vacuumizing system, and taking out the product after the vacuum chamber is cooled to room temperature; and then repeating the steps to deposit Ge, wherein the parameters of the vapor deposition are as follows: the argon gas flow of the ion source is 18sccm, the oxygen gas flow is 25sccm, the beam pressure of the ion source is 200V, the beam flow of the ion source is 90V, and the deposition rate is controlled to be 0.3nm/s; vacuum is more than or equal to 2 multiplied by 10 after vapor deposition is finished -3 Pa, cooling to 70 ℃, closing the vacuumizing system, and taking out the product after the vacuum chamber is cooled to room temperature;
(6) Setting the large angle incidence range and the reference wavelength: the incident angle range is 0-48 degrees, and the reference wavelength is 1064nm; constructing a second film system structure; calculating and optimizing the transmittance of the second film system structure at the reference wavelength to obtain an optimized first film system structure, wherein the optimized first film system structure comprises the following steps: C/1.06H/0.53H1.35L/C;
(7) Processing the deposited vacuum chamber: firstly, cleaning all components of a vacuum chamber of a film plating machine, namely a protective screen, an electrode, a baffle plate and a tool by using a sand blasting machine; the cleaning standard is as follows: after cleaning, the surface of the cleaned piece cannot be attached with a film layer; secondly, wiping the surface of the vacuum chamber by using a mixed solution of ethanol and diethyl ether, and checking the surface by using a gas-cutting method until the surface is free of greasy dirt, dust particles and scratches; putting 120g gGe and 200g ZnS into an electron gun crucible again, blowing the surface of the silicon wafer deposited with the diamond film surface by using an ear-washing ball, and immediately closing the vacuum chamber door;
(8) Plating of the second optical film: maintaining the vacuum degree in the vacuum chamber to be more than or equal to 2 multiplied by 10 -3 Pa, turning on a rotary switch, rotating a working frame, turning on baking, setting baking temperature, and then sequentially turning on an electron gun deflection power supply, a filament power supply and gun high voltage; opening an ion source, cleaning the substrate for 5min by using an ion beam, wherein the ion source adopts argon as working gas, the purity of the working gas is more than or equal to 99.995%, the gas flow is kept at 18-22 sccm, and the deposition of Ge is performed by using an ion beam assisted electron beam evaporation method; parameters for maintaining vapor deposition are: the argon gas flow of the ion source is 18sccm, the oxygen gas flow is 25sccm, the beam pressure of the ion source is 200V, the beam flow of the ion source is 90V, and the deposition rate is controlled to be 0.3nm/s; vacuum is more than or equal to 2 multiplied by 10 after vapor deposition is finished - 3 Pa, cooling to 70 ℃, closing the vacuumizing system, and taking out the product after the vacuum chamber is cooled to room temperature; then repeating the steps to deposit Ge again; vacuum is more than or equal to 2 multiplied by 10 after vapor deposition is finished -3 Pa, cooling to 70 ℃, closing the vacuumizing system, and taking out the product after the vacuum chamber is cooled to room temperature; finally repeating the steps to deposit ZnS, wherein the parameters of the vapor deposition are as follows: the argon gas flow of the ion source is 20sccm, the oxygen gas flow is 14sccm, the beam pressure of the ion source is 180V, the beam flow of the ion source is 80V, and the deposition rate is 0.5nm/s; after the vapor deposition is finished, the vacuum is not less than2×10 -3 Pa, cooling to 70 ℃, closing the vacuumizing system, and taking out the product after the vacuum chamber is cooled to room temperature;
(9) And (3) placing the product obtained in the step (8) in a reaction chamber of a chemical vapor deposition device, keeping the surface temperature of the product at 750 ℃, introducing mixed gas of methane, ethanol and anisole with the volume ratio of 3:0.5:0.2 at a flow rate of 30sccm, introducing hydrogen at a flow rate of 22sccm, performing diamond film deposition for 1h, keeping the deposition air pressure at 5kPa, repeating the steps after the deposition is finished, performing the deposition of the diamond film on the other side of the product obtained by the deposition, and obtaining the long-wave pass filter after the deposition is finished.
The Fourier spectrophotometer is used for detecting the spectral characteristics, and the light transmittance of the long-wave pass filter obtained by the embodiment reaches 82%, and the average transmittance after the anti-reflection reaches 91.2%; the light transmittance in the cut-off region was 0.34%. Namely, the long-wave pass filter obtained by the invention has excellent light transmittance and cut-off rate.
The mechanical performance of the long-wave pass filter obtained by the invention and the long-wave pass filter obtained by the prior art CN114035256A are detected, and the detection method and the detection result are as follows:
the detection method comprises the following steps: the peel strength of the long-pass filter obtained by the present invention (denoted as test sample) and the long-pass filter obtained by the prior art CN114035256a (denoted as control sample) were measured at room temperature and denoted as initial peel strength; and then placing the test sample and the control sample in a constant temperature and humidity box, keeping the humidity at 85%, treating at 90 ℃ for 24 hours, taking out the test sample and the control sample, and measuring the peel strength of the test sample and the control sample and recording the peel strength as the peel strength after treatment. The results obtained are shown in Table 1.
TABLE 1 peel strength of Long wave pass filters obtained in the present invention and in the prior art CN114035256A
| Initial peel strength (N/m) | Treated peel strength (N/m) | |
| Test sample | 99.56 | 82.75 |
| Control sample | 60.13 | 40.08 |
As can be seen from Table 1, the peel strength of the obtained long-wave pass filter is obviously higher than that of the long-wave pass filter in the prior art, and the peel strength of the long-wave pass filter is obviously changed after being treated in a high-temperature and high-humidity environment, so that the long-wave pass filter can be ensured to be normally used in a severe environment.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (1)
1. A method for preparing a long-wave pass filter with a large angle incidence range is characterized in that,
the large-angle incidence range long-wave pass filter comprises a substrate, a first film structure, a second film structure and a diamond film;
the substrate is a silicon wafer;
the first film structure comprises a first optical film and a diamond film, wherein the first optical film is composed of a high refractive index material and a low refractive index material;
the second film structure comprises a second optical film composed of a high refractive index material, a third optical film composed of a high refractive index material and a low refractive index material, and a diamond film;
the long-wave pass filter is sequentially provided with a diamond film, a first optical film, a substrate, a diamond film, a second optical film, a third optical film and a diamond film;
the first film structure comprises C/aHbL/S, wherein C is a diamond film, H is a high refractive index material, L is a low refractive index material, S is a substrate, and a and b are optical thicknesses of 1/4 wavelength;
the second film structure comprises C/cH/dHeL/C, wherein C is a diamond film, H is a high refractive index material, L is a low refractive index material, and C, d and e are optical thicknesses of 1/4 wavelength;
the high refractive index material is Ge;
the low refractive index material is ZnS;
the spectral characteristic detection is carried out by using a Fourier spectrophotometer, the light transmittance of the long-wave pass filter is 82%, and the average transmittance after the anti-reflection is 91.2%; the light transmittance in the cut-off region was 0.34%;
the preparation method of the long-wave pass filter with the large angle incidence range comprises the following steps:
depositing a diamond film on the lower surface of the substrate, and sequentially preparing a second optical film and a third optical film after the deposition is completed; preparing a first optical film on an upper surface of a substrate; depositing diamond films on the surfaces of the first optical film and the second optical film; obtaining the long-wave pass filter;
the method comprises the steps of preprocessing the lower surface of a substrate before depositing a diamond film on the lower surface of the substrate; the pretreatment steps are as follows: polishing the lower surface of the substrate with diamond powder; the grain diameter of the diamond powder is 0.2-0.4 mu m; the grinding time is 30-40 min;
the carbon sources used for the deposition are methane, ethanol and anisole; the volume ratio of the methane to the ethanol to the anisole is 2-4:2-3:0.02-0.05; the flow rate of the carbon source is 40-60 sccm; during deposition, the temperature of the lower surface of the substrate is 700-800 ℃; the deposition air pressure is 5-7 kPa, and the deposition time is 1-2 hours;
when preparing the first optical film, the second optical film and the third optical film, the preparation steps are as follows: constructing an optical film system structure; calculating and optimizing the transmittance of the optical film system structure at the reference wavelength to obtain an optimized optical film system structure; and preparing a film with the optimized optical film system structure to obtain the optical film.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103556114A (en) * | 2013-11-11 | 2014-02-05 | 厦门大学 | Preparation method for carbon-based thin-film attenuation filter |
| CN204228989U (en) * | 2014-11-20 | 2015-03-25 | 苏州鼎旺科技有限公司 | High rigidity filter sheet structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103556114A (en) * | 2013-11-11 | 2014-02-05 | 厦门大学 | Preparation method for carbon-based thin-film attenuation filter |
| CN204228989U (en) * | 2014-11-20 | 2015-03-25 | 苏州鼎旺科技有限公司 | High rigidity filter sheet structure |
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