CN116598365A - Vacuum packaging structure and manufacturing method thereof - Google Patents
Vacuum packaging structure and manufacturing method thereof Download PDFInfo
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- CN116598365A CN116598365A CN202310710415.7A CN202310710415A CN116598365A CN 116598365 A CN116598365 A CN 116598365A CN 202310710415 A CN202310710415 A CN 202310710415A CN 116598365 A CN116598365 A CN 116598365A
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- cover plate
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- packaging structure
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- 238000009461 vacuum packaging Methods 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 229910000679 solder Inorganic materials 0.000 claims abstract description 46
- 238000002844 melting Methods 0.000 claims abstract description 23
- 230000008018 melting Effects 0.000 claims abstract description 23
- 238000003466 welding Methods 0.000 claims abstract description 19
- 230000004913 activation Effects 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 7
- 229910000833 kovar Inorganic materials 0.000 claims description 6
- 230000007246 mechanism Effects 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000005192 partition Methods 0.000 abstract description 9
- 239000010409 thin film Substances 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 4
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 description 16
- 239000000919 ceramic Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 6
- 230000003213 activating effect Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000009417 prefabrication Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention provides a vacuum packaging structure and a manufacturing method thereof. The vacuum packaging structure comprises a substrate, wherein the substrate is of a flat plate structure and is used for mounting a chip; the cover plate covers the surface of the substrate and is provided with a deep cavity, and the middle opening is used for arranging a window sheet; and the getter is arranged on the top surface and the side wall of the deep cavity of the cover plate. The vacuum packaging structure reduces the size of the vacuum packaging structure and increases the area of the thin film getter at the same time, so that the content of the getter is increased, and the vacuum service life of the device is further prolonged. The manufacturing method reasonably selects melting points of different solder layers, partitions the substrate and the cover plate when the substrate and the cover plate are heated in the heating device, separates the substrate and the cover plate by using a cold screen, realizes high-temperature activation of the getter in the vacuum welding process, and simultaneously avoids damage of the chip caused by high temperature.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a vacuum packaging structure and a manufacturing method thereof.
Background
Infrared thermal imaging technology has been widely used in the fields of industrial detection, security monitoring, etc. The uncooled infrared focal plane detector is a core component of the thermal infrared imager, and the detector chip can show better performance only when working in a high vacuum environment, so that the chip needs to be vacuum packaged. In order to maintain a high vacuum within the package cavity, a getter needs to be placed within the cavity and activated, the effective activation temperature generally needs to be higher than 300 ℃, and the higher the temperature, the better the activation effect. The more getter is placed in the device cavity and the better the getter activation effect, the longer the maintenance time of the vacuum in the cavity, the longer the device lifetime.
Ceramic package is a common package form due to its simple structure and small volume. The ceramic packaging structure of the uncooled infrared focal plane detector comprises a chip, a ceramic shell, a window sheet and a getter. The ceramic shell is provided with a deep cavity, the chip is attached to the bottom surface of the deep cavity, and the upper surface of the shell is hermetically welded with the window sheet, so that a packaging cavity is formed. Uncooled infrared focal plane detector chips are generally not tolerant of high temperatures, so there are two ways of getter placement within the cavity.
One way is to use a strip-shaped getter, make the getter powder on the surface of a strip-shaped metal substrate, then weld the metal substrate on a metal block in a deep cavity of a ceramic shell, the metal block is communicated with an outer lead of the shell, and after packaging, the outer lead of the getter can be electrified to realize the electrical heating activation of the getter. A prior art vacuum package structure is shown in fig. 1, and includes a ceramic housing 101, a ribbon getter 102, a die 103, and a window 104. The getter is powder, the quantity is relatively large, the getter is heated locally when the power is on, the getter can keep relatively high temperature, the activation effect is good, and the vacuum life of the device is relatively good; however, in arrangement, the getter and the chip are both arranged on the inner surface of the deep cavity of the ceramic shell, and the getter and the chip are required to be spaced at a certain distance to ensure that the chip is not damaged by high temperature during the activation of the getter, so that the deep cavity is larger in length and width, and the vacuum packaging structure is larger in size.
Another prior art vacuum package structure is shown in fig. 2 a-2 b. As shown in fig. 2a, the vacuum packaging structure comprises a ceramic housing 201, a chip 202, and a window 203. Fig. 2b is a cross-sectional view of the vacuum package structure, and as shown in fig. 2b, the lower surface of the window includes a soldering region 2031, a light-transmitting region 2032, and a region 2033 where a getter is disposed. A thin film getter is formed in the getter-provided region 2033 by evaporation, sputtering, or the like. In the welding process, the window 203 and the ceramic shell 201 need to be heated separately to avoid damage to the chip 202 caused by the high temperature of heating the window and activating the getter, and the window is cooled after the getter is activated and then the window and the shell are welded in an airtight manner. In the mode, only a chip is required to be placed in the deep cavity of the shell, the length and width dimensions are relatively small, and the vacuum packaging structure is small in size; however, the area of the getter is smaller, the amount of the getter is smaller, and the vacuum life of the packaging structure is not good.
Therefore, how to increase the getter content in the vacuum package structure based on the size reduction of the vacuum package structure, and further increase the vacuum lifetime of the package structure has become a technical problem to be solved in the industry.
Disclosure of Invention
The invention aims to provide a vacuum packaging structure and a manufacturing method thereof, which are used for reducing the size of the vacuum packaging structure and increasing the content of getter in the vacuum packaging structure so as to further prolong the vacuum life of the packaging structure.
In order to solve the above problems, the present invention provides a vacuum packaging structure comprising: the substrate is of a flat plate structure and is used for mounting a chip; the cover plate covers the surface of the substrate and is provided with a deep cavity; and the getter is arranged on the top surface and the side wall of the deep cavity of the cover plate.
Optionally, the cover plate material is kovar alloy.
Optionally, the cover plate is hollowed out and covers a window, the light passing area of the window is double-sided coated film, and the edge area of the lower surface is made of metal material and is used for airtight welding of the window and the cover plate.
Optionally, a first solder layer is disposed between the cover plate and the substrate, and the melting point of the first solder layer is lower than the tolerance temperature of the chip.
Optionally, a second solder layer is arranged between the window sheet and the cover plate, and the melting point of the second solder layer is not lower than the activation temperature of the getter, so that the getter is activated while the window sheet and the cover plate are welded.
In order to solve the above problems, the present invention further provides a method for manufacturing a vacuum packaging structure, including: providing a substrate and a cover plate, wherein a chip is attached to the upper surface of the substrate, the cover plate is provided with a deep cavity, and the top surface and the side wall of the deep cavity of the cover plate are provided with films formed by getters; welding the substrate and a window sheet by adopting a second solder layer, wherein the window sheet is arranged at the hollowed-out part of the cover plate; placing the base plate and the cover plate in a heating device, and isolating the base plate and the cover plate by using a cold screen; the cover plate is heated, which activates the getter and simultaneously reinforces the second solder layer.
Optionally, after the step of heating the cover plate, the method further comprises the steps of: and cooling the cover plate to a temperature below the melting point of the first solder layer, removing the cold screen, and welding the substrate and the cover plate through the first solder layer to form a vacuum packaging structure.
Optionally, the cover plate material is kovar alloy.
Optionally, the first solder layer has a melting point lower than the tolerance temperature of the chip, and the second solder layer has a melting point not lower than the activation temperature of the getter.
Optionally, the heating device is a vacuum reflow oven, and a moving mechanism is arranged in the vacuum reflow oven and used for driving the base plate and the cover plate to move so as to realize the bonding of the base plate and the cover plate.
According to the technical scheme, the substrate is designed into the flat plate structure, and the packaging cavity is formed by welding the cover plate with the deep cavity with the substrate, so that the packaging structure maintains a miniaturized design in size. The getter is made on the top surface and the side wall of the deep cavity of the cover plate in a thin film mode, and the side wall area is increased, so that the getter is more used than the prior thin film getter packaging structure, and the vacuum maintenance in the device is facilitated.
The melting point of the first solder layer between the base plate and the cover plate is further lower than the chip tolerance temperature, the melting point of the second solder layer between the window sheet and the cover plate is not lower than the getter activation temperature, meanwhile, cold screen is used for heat insulation, the high-temperature activation of the getter is realized in the vacuum welding process, the damage of the high temperature to the chip is avoided, the manufacturing steps are simple, and the efficiency is high.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention as claimed. Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but should be considered part of the specification where appropriate.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments of the present invention will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a prior art vacuum package structure;
FIGS. 2 a-2 b are schematic diagrams of a vacuum package structure according to the prior art;
FIG. 3 is a cross-sectional view of a vacuum package structure according to an embodiment of the present invention;
FIG. 4 is a flow chart of a method for fabricating a vacuum package structure according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of placement of a device in a vacuum reflow oven to create a vacuum package structure in accordance with an embodiment of the present invention;
fig. 6 is a cross-sectional view of a vacuum package structure formed using a vacuum reflow oven in accordance with an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made in detail and with reference to the accompanying drawings, wherein it is apparent that the embodiments described are only some, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The vacuum packaging structure and the manufacturing method of the invention are specifically described below with reference to the accompanying drawings.
FIG. 3 is a cross-sectional view of a vacuum package structure according to an embodiment of the present invention. Referring to fig. 3, the vacuum packaging structure includes: chip 302, substrate 301, cover plate 304, window 303, and getter 305. The chip 302 is mounted on the substrate 301, the cover plate 304 is welded on the substrate 301 through a first welding material layer 306, the window 303 is welded on the cover plate 304 through a second welding material layer 307, and the getter 305 is manufactured on the top surface and the side wall of the deep cavity of the cover plate 304 in a film mode. The substrate 301 is a ceramic plate, the material of the cover plate 304 is kovar alloy, a deep cavity is formed, the top middle opening is a light-transmitting area, and the light-transmitting area of the window 303 corresponds to the light-transmitting area of the cover plate 304.
In some embodiments, the light-transmitting area of the window 303 is a double-sided film, the edge area of the lower surface is made of metal material, for airtight welding, and the thin film formed by the getter 305 is manufactured by evaporation or sputtering.
In some embodiments, the second solder layer 307 has a melting point not lower than the activation temperature of the getter 305, ensuring that the getter 305 is activated while the window 303 is welded to the cover plate 304; the first solder layer 306 has a melting point lower than the withstand temperature of the chip 302 so as not to affect the chip 302 at high temperatures.
In some embodiments, the area of the first solder layer between the substrate 301 and the cover plate 304 is gold plated.
In some embodiments, the cover plate 304 is surface gold plated.
According to the technical scheme, the substrate 301 is designed into a flat plate structure, the packaging cavity is formed by welding the cover plate 304 with the deep cavity with the substrate 301, no additional structure is arranged in the vacuum packaging structure for placing the getter, and no additional structure is arranged for activating the getter, so that the packaging structure maintains a miniaturized design in size. The getter 305 is formed on the surface of the deep cavity of the cover plate 304, including the top surface and the side walls, and the increased side wall area increases the amount of getter used compared to the amount of the prior thin film getter package structure, which is more advantageous for maintaining the vacuum in the device.
Correspondingly, the embodiment of the invention also provides a manufacturing method of the vacuum packaging structure.
Fig. 4 is a flowchart of a method for manufacturing a vacuum package structure according to an embodiment of the invention. Referring to fig. 4, the method for manufacturing the vacuum packaging structure includes: step S401, a substrate and a cover plate are provided, wherein a chip is attached to the upper surface of the substrate, a deep cavity is formed in the cover plate, and films formed by getters are arranged on the top surface and the side wall of the deep cavity of the cover plate; step S402, welding the substrate and a window by adopting a second solder layer, wherein the window is arranged at the hollowed-out part of the cover plate; step S403, placing the substrate and the cover plate in a heating device, and isolating the substrate and the cover plate by a cold screen; step S404, heating the cover plate, and activating the getter and simultaneously strengthening the second solder layer.
In some embodiments, the heating device is a vacuum reflow oven. The vacuum reflow oven has an upper and lower partition heating function, and the cold screen effectively shields heat radiation, and a moving mechanism is arranged in the oven and used for driving the upper and lower partition to move so as to realize the attachment of the base plate and the cover plate in the upper and lower regions.
Referring to step S401, a substrate and a cover plate are provided, a chip is attached to the upper surface of the substrate, the cover plate is provided with a deep cavity, and the top surface and the side wall of the deep cavity of the cover plate are provided with thin films made of getters. In some embodiments of this step, the cover plate material is kovar and the substrate is a ceramic plate. The step of mounting a chip on the upper surface of the substrate further comprises: and the chip PAD is communicated with the substrate PAD by means of gold wire bonding and the like, and is further communicated with an outer lead of the substrate.
Referring to step S402, a second solder layer is used to solder the substrate and a window, where the window is disposed at the hollowed-out portion of the cover plate. The light-transmitting area of the window sheet corresponds to the light-transmitting area of the cover plate.
Referring to step S403, the substrate and the cover plate are placed in a heating device, and a cold screen is used to isolate the substrate and the cover plate. Fig. 5 is a schematic view showing the placement of a device for manufacturing a vacuum package structure by using a vacuum reflow furnace in this step. The packaging structure is placed in the vacuum reflow oven in a similar flip-chip manner, and specifically comprises: a substrate 301 and a chip 302 are placed in the upper region of the vacuum reflow oven, and a window 303 and a cover plate 304 provided with a getter 305 are placed in the lower region of the vacuum reflow oven; a first solder layer 506 is disposed at a soldering region of the substrate 301 and the cover plate 304; a second solder layer 507 is arranged at the welding area of the window 303 and the cover plate 304; the cold screen 508 insulates the upper and lower sections of the vacuum reflow oven.
Step S404, heating the cover plate, and activating the getter and simultaneously strengthening the second solder layer. In the embodiment of the present step for manufacturing the vacuum packaging structure by using the vacuum reflow oven, when the vacuum pressure in the oven is less than 1×10 -2 At Pa, the lower zone is heated to a temperature 30 ℃ to 50 ℃ above the melting point of the second solder layer to complete good soldering of the window 303 and the cover 304 and activate the getter 305.
In some embodiments, after the step of heating the cover plate 304, further comprising: cooling the cover plate 304 to a temperature below the melting point of the first solder layer 506, removing the cold screen 508, bonding the substrate 301 and the cover plate 304 into a packaging structure under the drive of the motion mechanism, heating the whole packaging structure to a temperature about 30-50 ℃ higher than the melting point of the first solder layer 506, and maintaining for a certain time, so as to weld the substrate 301 and the cover plate 304 to form a vacuum packaging structure; and cooling the packaging structure in the vacuum reflow furnace, and when the temperature is reduced to be below the melting point of the first solder layer 506, adopting an air cooling or water cooling mode to accelerate cooling.
FIG. 6 is a cross-sectional view of a vacuum package formed using a vacuum reflow oven in one embodiment. In the vacuum reflow oven, the whole package structure is inverted, the chip 302 is disposed on the surface of the substrate 301, the substrate 301 and the cover plate 304 are sealed and welded by a first solder layer 606, the cover plate 304 and the window 303 are sealed and welded by a second solder layer 607, and the getter 605 is fabricated on the top surface and the side wall of the deep cavity of the cover plate 604.
In some embodiments, a thin film of getter is fabricated on the top and side walls of the interior of the deep cavity of the cover plate by evaporation or sputtering.
In some embodiments, a solder area between the base plate and the cover plate is surface plated with gold, and the first solder layer is fixed thereon. The first solder layer can be fixed by laser spot welding, reflow prefabrication and the like. The first solder layer has a melting point lower than the withstand temperature of the chip.
In some embodiments, the light-transmitting area of the window sheet is a double-sided coating film, the edge area of the lower surface is made of metal material and used for airtight welding, and the melting point of the second solder layer is not lower than the activation temperature of the getter.
According to the technical scheme, the thin film formed by the getter is manufactured on the top surface and the side wall of the deep cavity of the cover plate, so that the consumption of the getter is increased on the basis of miniaturization design, the chip is protected by selecting that the melting point of the first solder layer between the base plate and the cover plate is lower than the chip tolerance temperature, the getter activation temperature is not lower than the melting point of the second solder layer between the window sheet and the cover plate, the getter is simultaneously activated in the welding process of the window sheet and the cover plate, and the upper partition and the lower partition of the vacuum reflow furnace, the cold screen heat insulation and the movement mechanism are used for driving the upper partition and the lower partition to move so as to realize the lamination of the upper partition and the lower partition, so that the manufacturing process of the whole packaging structure is accurate and high in efficiency, the manufactured packaging structure has high getter content and high activation temperature, the vacuum in the cavity is favorably maintained, and the longer vacuum life of the device can be realized.
It should be noted that in this document, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprise," "include," or any other variation thereof, are intended to cover a non-exclusive inclusion. In this specification, each embodiment is described in a related manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment mainly describes differences from other embodiments.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention. It should be noted that modifications and adaptations to the present invention may occur to one skilled in the art without departing from the principles of the present invention and are intended to be comprehended within the scope of the present invention.
Claims (10)
1. A vacuum packaging structure, characterized by comprising:
the substrate is of a flat plate structure and is used for mounting a chip;
the cover plate covers the surface of the substrate and is provided with a deep cavity;
and the getter is arranged on the top surface and the side wall of the deep cavity of the cover plate.
2. The vacuum packaging structure of claim 1, wherein the cover plate material is kovar.
3. The vacuum packaging structure according to claim 2, wherein the cover plate is hollowed out and covers a window sheet, a light passing area of the window sheet is a double-sided coating film, and an edge area of the lower surface is made of a metal material and is used for airtight welding of the window sheet and the cover plate.
4. The vacuum packaging structure according to claim 1, wherein a first solder layer is provided between the cover plate and the substrate, and the melting point of the first solder layer is lower than the tolerance temperature of the chip.
5. A vacuum packaging structure according to claim 3, wherein a second solder layer is provided between the window and the cover plate, and the melting point of the second solder layer is not lower than the activation temperature of the getter, so that the getter is activated while the window and the cover plate are welded.
6. The manufacturing method of the vacuum packaging structure is characterized by comprising the following steps of:
providing a substrate and a cover plate, wherein a chip is attached to the upper surface of the substrate, the cover plate is provided with a deep cavity, and the top surface and the side wall of the deep cavity of the cover plate are provided with films formed by getters;
welding the substrate and a window sheet by adopting a second solder layer, wherein the window sheet is arranged at the hollowed-out part of the cover plate;
placing the base plate and the cover plate in a heating device, and isolating the base plate and the cover plate by using a cold screen;
the cover plate is heated, which activates the getter and simultaneously reinforces the second solder layer.
7. The method of manufacturing a vacuum package structure according to claim 6, further comprising the steps of, after the step of heating the cover plate:
and cooling the cover plate to a temperature below the melting point of the first solder layer, removing the cold screen, and welding the substrate and the cover plate through the first solder layer to form a vacuum packaging structure.
8. The method of claim 6, wherein the cover plate material is kovar.
9. The method of claim 7, wherein the first solder layer has a melting point lower than a temperature resistant to the chip, and the second solder layer has a melting point not lower than an activation temperature of the getter.
10. The method for manufacturing a vacuum packaging structure according to claim 6, wherein the heating device is a vacuum reflow oven, and a moving mechanism is arranged in the vacuum reflow oven for driving the substrate and the cover plate to move so as to achieve the bonding of the substrate and the cover plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310710415.7A CN116598365A (en) | 2023-06-15 | 2023-06-15 | Vacuum packaging structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310710415.7A CN116598365A (en) | 2023-06-15 | 2023-06-15 | Vacuum packaging structure and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116598365A true CN116598365A (en) | 2023-08-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310710415.7A Pending CN116598365A (en) | 2023-06-15 | 2023-06-15 | Vacuum packaging structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116598365A (en) |
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2023
- 2023-06-15 CN CN202310710415.7A patent/CN116598365A/en active Pending
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