JP2584785B2 - Thermoelectric module - Google Patents
Thermoelectric moduleInfo
- Publication number
- JP2584785B2 JP2584785B2 JP62214169A JP21416987A JP2584785B2 JP 2584785 B2 JP2584785 B2 JP 2584785B2 JP 62214169 A JP62214169 A JP 62214169A JP 21416987 A JP21416987 A JP 21416987A JP 2584785 B2 JP2584785 B2 JP 2584785B2
- Authority
- JP
- Japan
- Prior art keywords
- base plate
- thermoelectric element
- semiconductor thermoelectric
- thermal conductivity
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
【発明の詳細な説明】 〔概 要〕 ペルチェ効果を利用した半導体熱電素子の放熱部又は
吸熱部を熱伝導率の高い金属製のベースプレートに接続
・固定し、熱伝導率の低い材質からなる包囲体で前記半
導体熱電素子を包囲するとともに、内部を真空とするよ
うに前記ベースプレートに気密封止した熱電素子モジュ
ールに関し、 熱伝導率の高い金属製のベースプレートと、熱伝導率
の低い材質からなる包囲体との間の熱膨張率の差による
熱応力を効果的に吸収しかつ両者間の気密性を良好にす
ることを目的とし、 包囲体とベースプレートとの間に軟質金属のパッキン
を介在させたことを特徴とする熱電素子モジュールを構
成する。DETAILED DESCRIPTION OF THE INVENTION [Summary] A heat radiating portion or a heat absorbing portion of a semiconductor thermoelectric element utilizing the Peltier effect is connected and fixed to a metal base plate having a high thermal conductivity, and is surrounded by a material having a low thermal conductivity. A thermoelectric element module enclosing the semiconductor thermoelectric element with a body and hermetically sealed to the base plate so as to evacuate the inside, comprising a metal base plate having a high thermal conductivity and a material having a low thermal conductivity. With the aim of effectively absorbing thermal stress due to the difference in the coefficient of thermal expansion between the body and the airtightness between the two, a soft metal packing was interposed between the enclosure and the base plate. This constitutes a thermoelectric element module.
本発明は熱電素子モジュール、特にペルチェ効果を利
用した半導体熱電素子の放熱部又は吸熱部を熱伝導率の
高い金属製のベースプレートに接続・固定し、熱伝導率
の低い材質からなる包囲体で前記半導体熱電素子を包囲
するとともに、内部を真空とするように前記ベースプレ
ートに気密封止した熱電素子モジュールに関する。The present invention relates to a thermoelectric element module, in particular, a heat radiating part or a heat absorbing part of a semiconductor thermoelectric element utilizing the Peltier effect which is connected and fixed to a metal base plate having a high thermal conductivity, and an enclosure made of a material having a low thermal conductivity. The present invention relates to a thermoelectric element module that surrounds a semiconductor thermoelectric element and is hermetically sealed to the base plate so that the inside is evacuated.
ペルチェ効果を利用した半導体熱電素子として現在一
般に使用されている材質は、ビスマス、アンチモン等の
合金であり、それ自体機械的に弱くてもろい。またこの
種の素子の接続は、素子自体の耐熱性等の条件により低
融点のハンダ等により接続され、セラミック等の絶縁基
板に接着されている。従って、熱電素子の取付けは素子
に引張り応力及び曲げモーメントが加わらないように平
らに押さえつけるように取付けなくてはならない。ま
た、熱電素子の冷却効率は、加熱側の効率に対して数倍
悪いため、熱電素子を使用して冷却を行う場合、加熱側
から冷却側への熱の流入を防ぐよう、熱電素子を、放熱
部と被冷却部との間に熱的に遮断するように機械的に接
続しなければならない。Materials generally used as semiconductor thermoelectric elements utilizing the Peltier effect at present are alloys such as bismuth and antimony, which are themselves mechanically weak and brittle. In addition, this type of element is connected by low melting point solder or the like depending on conditions such as heat resistance of the element itself, and is bonded to an insulating substrate such as ceramic. Therefore, the thermoelectric element must be mounted so that the element is pressed flat so that tensile stress and bending moment are not applied to the element. Also, since the cooling efficiency of the thermoelectric element is several times worse than the efficiency on the heating side, when cooling using the thermoelectric element, the thermoelectric element is prevented from flowing from the heating side to the cooling side, It must be mechanically connected between the heat radiating part and the part to be cooled so as to be thermally isolated.
以上のような目的を実現する１つの従来方法として、
半導体熱電素子の周囲をガラス管にて真空密封する方法
が提案されている（例えば、特公昭59−31995号）即
ち、この従来例では、ペルチェ効果を利用する半導体熱
電素子の放熱側をベースプレートとし、冷却側に熱伝導
性リードを出し、前記半導体素子の周囲をガラス管にて
真空封止した熱電素子モジュールが開示されている。As one conventional method for realizing the above purpose,
A method of vacuum-sealing the periphery of a semiconductor thermoelectric element with a glass tube has been proposed (for example, Japanese Patent Publication No. 59-31995). That is, in this conventional example, the heat radiation side of the semiconductor thermoelectric element utilizing the Peltier effect is used as a base plate. A thermoelectric element module is disclosed in which a thermally conductive lead is provided on the cooling side, and the periphery of the semiconductor element is vacuum-sealed with a glass tube.
しかし、この従来例では、半導体熱電素子の放熱側に
接続されるベースプレートとして、熱伝導性に優れかつ
熱膨張率が真空密封ガラスと同等の材料のものが要求さ
れる。これは、ベースプレートとガラス管とが真空封止
されており、素子の放熱側にあるベースプレートの熱的
変化によりガラス管が熱応力を受けるためである。しか
し、一般にベースプレートとして使用される銅、アルミ
ニウムといった材質では、このような条件を容易に満足
することができない。そこで、モジュール自体の大きさ
が、この熱応力を許容しうる程度の小型形状の範囲に限
定されるという欠点がある。However, in this conventional example, a base plate that is excellent in thermal conductivity and has a coefficient of thermal expansion equivalent to that of vacuum-sealed glass is required as a base plate connected to the heat radiation side of the semiconductor thermoelectric element. This is because the base plate and the glass tube are vacuum-sealed, and the glass tube receives thermal stress due to a thermal change of the base plate on the heat radiation side of the element. However, materials such as copper and aluminum generally used as a base plate cannot easily satisfy such conditions. Therefore, there is a disadvantage that the size of the module itself is limited to a range of a small shape capable of allowing the thermal stress.
そこで、本発明は、熱伝導率の高い金属製のベースプ
レートと、熱伝導率の低い材質、例えばガラス等からな
る包囲体との間の熱膨張率の差による熱応力を効果的に
吸収しかつ両者間の気密性を良好にすることを目的とす
る。Therefore, the present invention effectively absorbs thermal stress due to a difference in thermal expansion coefficient between a metal base plate having a high thermal conductivity and an enclosure made of a material having a low thermal conductivity, such as glass. The purpose is to improve the airtightness between the two.
このような問題点を解決するために、本発明によれ
ば、ペルチェ効果を利用した半導体熱電素子の放熱部又
は吸熱部を熱伝導率の高い金属製のベースプレートに接
続し、熱伝導率の低い材質からなる包囲体で前記半導体
熱電素子を包囲するとともに、内部を真空とするように
前記ベースプレートに気密封止した熱電素子モジュール
において、前記包囲体とベースプレートとの間に軟質金
属のパッキンを介在させたことを特徴とする熱電素子モ
ジュールが提供される。In order to solve such problems, according to the present invention, a heat radiating portion or a heat absorbing portion of a semiconductor thermoelectric element utilizing the Peltier effect is connected to a metal base plate having a high thermal conductivity, and a low thermal conductivity. While surrounding the semiconductor thermoelectric element with an enclosure made of a material, in a thermoelectric element module hermetically sealed to the base plate so as to evacuate the inside, a soft metal packing is interposed between the enclosure and the base plate. A thermoelectric element module is provided.
熱伝導率の高い金属製のベースプレートは一般に熱膨
張係数も高く、また熱伝導率の低い材質、例えばガラス
等からなる包囲体は一般に熱膨張係数も低い。従って、
ペルチェ効果による半導体素子の放熱側と吸熱側との温
度差によりベースプレートと包囲体との間に温度変化が
生じ、熱膨張差が生ずる。しかし、包囲体とベースプレ
ートとの間には軟質金属のパッキンが介在されているの
で、該パッキンが両者間の膨張差を吸収し、包囲体の内
部の気密性を良好に維持する。A metal base plate having a high thermal conductivity generally has a high thermal expansion coefficient, and an enclosure made of a material having a low thermal conductivity, such as glass, generally has a low thermal expansion coefficient. Therefore,
Due to the temperature difference between the heat dissipation side and the heat absorption side of the semiconductor element due to the Peltier effect, a temperature change occurs between the base plate and the enclosure, resulting in a difference in thermal expansion. However, since the packing of the soft metal is interposed between the surrounding body and the base plate, the packing absorbs a difference in expansion between the two, and maintains the airtightness of the inside of the surrounding body well.
以下、添付図面を参照して本発明の実施例を詳細に説
明する。Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
図は、ペルチェ効果を利用した半導体熱電素子１及び
２を二段に重ね合わせて実装した本発明の熱電素子モジ
ュールの一実施例を断面図で示すものである。半導体熱
電素子１及び２は、ペルチェ効果を有する熱電材料、例
えばビスマス、アンチモン等の合金で構成され、所定の
直流電流を流すことによりその素子１、２の上下両平面
間に所望の温度差を生ずる。FIG. 1 is a cross-sectional view showing one embodiment of the thermoelectric element module of the present invention in which semiconductor thermoelectric elements 1 and 2 utilizing the Peltier effect are mounted in a two-tiered manner. The semiconductor thermoelectric elements 1 and 2 are made of a thermoelectric material having a Peltier effect, for example, an alloy of bismuth, antimony or the like, and a predetermined temperature difference is applied between the upper and lower planes of the elements 1 and 2 by flowing a predetermined direct current. Occurs.
半導体熱電素子１及び２は両者ともほぼ同じ程度の厚
さを有する平板状で、上側の比較的小さな半導体熱電素
子１と下側の比較的大きな半導体熱電素子２とを重ね合
わせ、熱伝導性の高い金属材料、例えば銅、アルミニウ
ム等からなる円板状のベースプレート３、４間に上下か
ら挟む。上側のベースプレート３は被温度制御部、例え
ば冷却を必要とする電子部品（図示せず）に接続され、
下側のベースプレート４は放熱器（図示せず）に接続さ
れる。各ベースプレート３、４に設けたねじ穴3a、4aは
それぞれ被温度制御部、放熱器を接続するために使用さ
れる。半導体熱電素子１、２の上下両面にイジュームシ
ート12を張り、両素子１、２間及びこれらの素子１、２
とベースプレート３、４との間の接触を良好にしてい
る。Each of the semiconductor thermoelectric elements 1 and 2 is a flat plate having substantially the same thickness, and a relatively small semiconductor thermoelectric element 1 on the upper side and a relatively large semiconductor thermoelectric element 2 on the lower side are overlapped with each other. It is sandwiched from above and below between disc-shaped base plates 3 and 4 made of a high metal material, for example, copper, aluminum or the like. The upper base plate 3 is connected to a temperature control unit, for example, an electronic component (not shown) requiring cooling,
The lower base plate 4 is connected to a radiator (not shown). The screw holes 3a and 4a provided in each of the base plates 3 and 4 are used to connect a temperature-controlled portion and a radiator, respectively. An resume sheet 12 is attached to both the upper and lower surfaces of the semiconductor thermoelectric elements 1 and 2 so as to cover the space between the elements 1 and 2 and these elements 1 and 2.
And the base plates 3 and 4 are in good contact with each other.
ベースプレート３、４の対向面周囲は、軟質金属、例
えばインジュームよりなる上下のリング状パッキン８を
介して円筒状ガラス管５で包囲される。これらのリング
状パッキン８は、例えばステンレス鋼よりなるリング９
の内側にインジューム金属10を圧接成形したもので、リ
ング９の内面がベースプレート３、４の外周壁面及び円
筒状ガラス管５の外周壁面に接触して、インジューム金
属10を保持するとともに、リング状のインジューム金属
10の上下面がベースプレート３、４の周囲内側面と円筒
状ガラス管５の端面に接触する。これにより、ガラス管
５の内部には半導体熱電素子１及び２を包囲する空間７
が形成される。The periphery of the opposing surfaces of the base plates 3 and 4 is surrounded by a cylindrical glass tube 5 via upper and lower ring-shaped packings 8 made of soft metal, for example, indium. These ring-shaped packings 8 are, for example, rings 9 made of stainless steel.
The inner surface of the ring 9 contacts the outer peripheral wall surfaces of the base plates 3 and 4 and the outer peripheral wall surface of the cylindrical glass tube 5 to hold the indium metal 10 and to hold the indium metal 10 inside the ring. Shaped indium metal
The upper and lower surfaces of 10 contact the inner peripheral surfaces of the base plates 3 and 4 and the end surface of the cylindrical glass tube 5. Accordingly, the space 7 surrounding the semiconductor thermoelectric elements 1 and 2 is provided inside the glass tube 5.
Is formed.
円筒状ガラス管５はその周壁の一部に外方に突出した
チップ管６を有し、このチップ管６を利用して所望の圧
力でチップ封止を行う。即ち、チップ管６の先端を開放
して所定の減圧器（図示せず）に接続し、所望の真空度
（例えば10-5Torr程度）になるまで減圧する。所望の真
空度に達した後、チップ管６の先端を熱封止して空間７
を真空密閉する。これにより、モジュール外部の大気圧
の作用でベースプレート３、４には上下から圧力がかか
り、インジュームパッキン８が上下のベースプレート
３、４と円筒状ガラス管５との間に適度な軽い圧力で挟
まれ、空間７の真空気密性を維持する。一方、ベースプ
レート３、４の上下にかかる圧力により半導体熱電素子
１、２も適度な軽い均等な圧力を受け、半導体熱電素子
１、２間及び両素子１、２とベースプレート３、４との
間の良好な接触を維持する。The cylindrical glass tube 5 has a chip tube 6 protruding outward on a part of its peripheral wall, and the chip is sealed at a desired pressure by using the chip tube 6. That is, the tip of the tip tube 6 is opened and connected to a predetermined pressure reducing device (not shown), and the pressure is reduced to a desired degree of vacuum (for example, about 10 -5 Torr). After the desired degree of vacuum is reached, the tip of the tip tube 6 is heat sealed to form a space 7.
Is vacuum-sealed. As a result, pressure is applied to the base plates 3 and 4 from above and below by the action of atmospheric pressure outside the module, and the indium packing 8 is sandwiched between the upper and lower base plates 3 and 4 and the cylindrical glass tube 5 with a moderate light pressure. Thus, the vacuum tightness of the space 7 is maintained. On the other hand, the semiconductor thermoelectric elements 1 and 2 also receive an appropriate light and uniform pressure due to the pressure applied to the upper and lower sides of the base plates 3 and 4, and the space between the semiconductor thermoelectric elements 1 and 2 and between Maintain good contact.
ビスマス、アンチモン等の合金で構成される半導体熱
電素子１、２それ自体は強度的に弱く脆いものではある
が、素子１、２は上記のように軽い適度な圧力しか受け
ず、強度な引っ張り応力、曲げ応力がかかることはない
ので、各接触部において熱的に良好な接続が維持され
る。また、半導体熱電素子１、２の放熱側（図示実施例
では下側）から吸熱側（図示実施例では上側）への熱貫
流は真空空間７により遮断される。Although the semiconductor thermoelectric elements 1 and 2 made of an alloy such as bismuth or antimony are weak in strength and brittle, the elements 1 and 2 receive only a moderate pressure as described above and have a strong tensile stress. Since no bending stress is applied, a good thermal connection is maintained at each contact portion. Further, the heat flow from the heat radiation side (the lower side in the illustrated embodiment) of the semiconductor thermoelectric elements 1 and 2 to the heat absorbing side (the upper side in the illustrated embodiment) is blocked by the vacuum space 7.
さらに、この真空空間７内における輻射による熱伝達
を防止するため、熱反射面である円筒ガラス管５及びベ
ースプレート３、４の内面に、例えばニッケル・クロー
ム（NiCr）等を蒸着してなるメタライズ層13を形成す
る。なお、14は半導体熱電素子１、２を直流電源又はア
ースに接続する電線、15は電線14を外部に接続するため
の気密端子である。Further, in order to prevent heat transfer by radiation in the vacuum space 7, a metallized layer formed by evaporating, for example, nickel chrome (NiCr) or the like on the inner surfaces of the cylindrical glass tube 5 and the base plates 3, 4 which are heat reflecting surfaces. Form 13. Reference numeral 14 denotes an electric wire for connecting the semiconductor thermoelectric elements 1 and 2 to a DC power supply or a ground, and reference numeral 15 denotes a hermetic terminal for connecting the electric wire 14 to the outside.
前述のように、半導体熱電素子１及び２に所定の直流
電流を流すことによりそれらの上下両平面に所望の温度
差を生じ、この実施例の場合、下側が放熱部、上側が吸
熱部となる。これにより、ベースプレート３側の被温度
制御部では吸熱・冷却作用が、ベースプレート４側の放
熱部では放熱作用がそれぞれ行われる。このような温度
差が生ずることにより、ベースプレート３、４間でも温
度差による熱膨張差が生ずる。一般に熱伝導率の高いベ
ースプレート３、４と熱伝導率の低いガラス管５とでは
熱膨張係数を異なるので、これらの間を機械的な剛結合
とすれば大きな熱応力に伴う熱歪み生ずることとなる
が、本発明では、インジュームパッキン８のインジュー
ム10の柔軟性によりガラス管５とベースプレート３、４
との間の熱膨張率差による応力を吸収することができ
る。尚、このようなインジュームパッキンを用いた気密
封止方法それ自体は、テレビカメラ等で公知の技術であ
る。As described above, by passing a predetermined DC current through the semiconductor thermoelectric elements 1 and 2, a desired temperature difference is generated between the upper and lower planes of the semiconductor thermoelectric elements. In this embodiment, the lower side is a heat radiating section and the upper side is a heat absorbing section. . As a result, the heat absorption / cooling action is performed in the temperature controlled section on the base plate 3 side, and the heat dissipation action is performed in the heat radiating section on the base plate 4 side. Such a temperature difference causes a difference in thermal expansion between the base plates 3 and 4 due to the temperature difference. In general, the base plates 3 and 4 having high thermal conductivity and the glass tube 5 having low thermal conductivity have different thermal expansion coefficients. Therefore, if a mechanical rigid connection is made between them, heat distortion due to large thermal stress occurs. However, in the present invention, the flexibility of the indium 10 of the indium packing 8 allows the glass tube 5 and the base plates 3, 4
Can absorb the stress due to the difference in thermal expansion coefficient. The hermetic sealing method using such an indium packing is a technique known per se for a television camera or the like.
以上のように、本発明は熱電素子の放熱部或いは吸熱
部に接続される熱伝導性の高いベースプレートと、真空
密封するためのガラス管のような熱伝導性の低い包囲体
との間を、機械的に剛接合とせずに、ベースプレートと
包囲体との間にインジュームパッキンを挟んで軟接合と
したので、両者間に熱膨張差が生じても、ガラス管のよ
うな包囲体−スプレートの熱応力を都合良く吸収し、真
空密封性を良好に維持することができる。また、半導体
熱電素子相互間やこれらの素子とベースプレートとの間
は適度な圧力により良好に接触が維持される。As described above, according to the present invention, a base plate having a high thermal conductivity connected to a heat radiating portion or a heat absorbing portion of a thermoelectric element and a low thermal conductive enclosure such as a glass tube for vacuum sealing are provided. Rather than mechanically rigid joining, the indium packing was sandwiched between the base plate and the surrounding body to form a soft joining. Can be conveniently absorbed to maintain good vacuum sealing properties. Further, good contact is maintained between the semiconductor thermoelectric elements and between these elements and the base plate by an appropriate pressure.
図は、ペルチェ効果を利用した半導体熱電素子１及び２
を二段に重ね合わせて実装した本発明の熱電素子モジュ
ールの一実施例を断面図で示すものである。 １、２……半導体熱電素子、 ３、４……ベースプレート、 ５……包囲体（円筒状ガラス管）、 ６……チップ管、 ７……密封空間、 ８……軟質金属の（インジューム）パッキン、 ９……ステンレスリング、 10……インジューム金属、 13……メタライズ層。The figure shows semiconductor thermoelectric elements 1 and 2 utilizing the Peltier effect.
FIG. 1 is a cross-sectional view showing one embodiment of the thermoelectric element module of the present invention in which is mounted in a two-tiered manner. 1, 2, semiconductor thermoelectric element 3, 4, base plate 5, enclosure (cylindrical glass tube) 6, chip tube 7, sealed space 8, soft metal (indium) Packing 9 Stainless steel ring 10 Indium metal 13 Metallized layer
Claims (2)
（１、２）の放熱部又は吸熱部を熱伝導率の高い金属製
のベースプレート（３、４）に接続し、熱伝導率の低い
材質からなる包囲体（５）で前記半導体熱電素子を包囲
するとともに、内部を真空とするように前記ベースプレ
ートに気密封止した熱電素子モジュールにおいて、前記
包囲体とベースプレートとの間に軟質金属のパッキン
（８）を介在させたことを特徴とする熱電素子モジュー
ル。1. A heat radiation part or heat absorption part of a semiconductor thermoelectric element utilizing a Peltier effect is connected to a metal base plate having a high thermal conductivity, and a material having a low thermal conductivity is used. In a thermoelectric element module enclosing the semiconductor thermoelectric element with an enclosure (5) and hermetically sealed to the base plate so that the inside is evacuated, a soft metal packing (8) is interposed between the enclosure and the base plate. ) Is interposed.
るためのメタライズ層（13）が形成されている特許請求
の範囲第１項記載の熱電素子モジュール。2. The thermoelectric element module according to claim 1, wherein a metallized layer (13) for reflecting radiant heat is formed on an inner surface of said enclosure (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62214169A JP2584785B2 (en) | 1987-08-29 | 1987-08-29 | Thermoelectric module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62214169A JP2584785B2 (en) | 1987-08-29 | 1987-08-29 | Thermoelectric module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6459877A JPS6459877A (en) | 1989-03-07 |
| JP2584785B2 true JP2584785B2 (en) | 1997-02-26 |
Family
ID=16651378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62214169A Expired - Fee Related JP2584785B2 (en) | 1987-08-29 | 1987-08-29 | Thermoelectric module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2584785B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000274871A (en) | 1999-03-19 | 2000-10-06 | Matsushita Refrig Co Ltd | Thermoelectric unit and thermoelectric manifold |
| JP2000274872A (en) | 1999-03-19 | 2000-10-06 | Matsushita Refrig Co Ltd | Manifold incorporating thermoelectric module |
| JP4488778B2 (en) * | 2003-07-25 | 2010-06-23 | 株式会社東芝 | Thermoelectric converter |
| JP4287262B2 (en) * | 2003-12-08 | 2009-07-01 | 株式会社東芝 | Thermoelectric converter |
| DE102007035931A1 (en) * | 2007-07-31 | 2009-02-05 | Bayerische Motoren Werke Aktiengesellschaft | Thermoelectric generator arrangement for internal combustion engine of vehicle, has base plates positively connected with hot and cold upper surfaces respectively, where one plate has dimension that is three millimeter longer than matrix |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4426445Y1 (en) * | 1965-07-09 | 1969-11-06 | ||
| JPS5931995A (en) * | 1982-08-17 | 1984-02-21 | 本田技研工業株式会社 | Display |
| JPS60247187A (en) * | 1984-05-22 | 1985-12-06 | Citizen Watch Co Ltd | Fixing structure of case and glass of wristwatch |
-
1987
- 1987-08-29 JP JP62214169A patent/JP2584785B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6459877A (en) | 1989-03-07 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |