CN116598294A - Semiconductor device based on hydrogen control and preparation method thereof - Google Patents
Semiconductor device based on hydrogen control and preparation method thereof Download PDFInfo
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- CN116598294A CN116598294A CN202310806711.7A CN202310806711A CN116598294A CN 116598294 A CN116598294 A CN 116598294A CN 202310806711 A CN202310806711 A CN 202310806711A CN 116598294 A CN116598294 A CN 116598294A
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- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 91
- 239000001257 hydrogen Substances 0.000 title claims abstract description 91
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 239000004065 semiconductor Substances 0.000 title claims abstract description 70
- 238000002360 preparation method Methods 0.000 title abstract description 14
- 238000010521 absorption reaction Methods 0.000 claims abstract description 38
- 230000004888 barrier function Effects 0.000 claims abstract description 31
- 230000000903 blocking effect Effects 0.000 claims abstract description 28
- 230000005855 radiation Effects 0.000 claims abstract description 28
- 238000002161 passivation Methods 0.000 claims abstract description 21
- 230000003647 oxidation Effects 0.000 claims abstract description 18
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 18
- 238000012360 testing method Methods 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 238000013461 design Methods 0.000 claims abstract description 6
- 238000005457 optimization Methods 0.000 claims abstract description 6
- 238000004806 packaging method and process Methods 0.000 claims abstract description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000010936 titanium Substances 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 51
- 230000008569 process Effects 0.000 claims description 40
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000006096 absorbing agent Substances 0.000 claims description 12
- 238000005538 encapsulation Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 230000000052 comparative effect Effects 0.000 claims description 3
- 230000001186 cumulative effect Effects 0.000 claims description 3
- 230000007613 environmental effect Effects 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 11
- 230000005527 interface trap Effects 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 230000008859 change Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 7
- 230000006872 improvement Effects 0.000 description 3
- 230000002787 reinforcement Effects 0.000 description 3
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 238000005389 semiconductor device fabrication Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention relates to a semiconductor device based on hydrogen control, which comprises a passivation layer, a blocking absorption layer, an oxide layer and a silicon layer which are connected in sequence. And the titanium layer is used as a blocking absorption layer to block hydrogen from entering the oxidation layer, and simultaneously absorbs excessive hydrogen in the oxidation layer to realize the control of the hydrogen content in the oxidation layer. The preparation method of the semiconductor device based on hydrogen control comprises the steps of flow sheet preparation, preparation and packaging of a barrier absorption layer, further comprises optimization of the barrier absorption layer, and selection of the thickness and the material of the barrier absorption layer through a contrast irradiation test. The invention sets the hydrogen blocking absorption layer to prevent the formation of the radiation induced defect interface trap, and improves the total dose resistance of the semiconductor device. The preparation process does not change the design structure of the device, has little influence on the conventional performance of the semiconductor device, is easy to implement and has simple and convenient flow.
Description
Technical Field
The invention belongs to the technical field of anti-radiation reinforcement of electronic devices, and particularly relates to a semiconductor device based on hydrogen control and a preparation method thereof.
Background
The weak total dose resistance of the electronic device severely restricts the application of the electronic device in a radiation environment, and the improvement of the total dose resistance is always a key difficult problem in the research field. The traditional process reinforcement means for bipolar process devices comprise the steps of changing passivation layers, injecting F into oxide layers, thinning base region oxide layers, increasing base region concentration, compressing an outer base region, replacing PNP transistors with longitudinal NPN structures and the like; for traditional MOS process devices, commonly adopted reinforcement means comprise means such as ring gate design, oxide layer quality improvement, channel doping adjustment and the like. The reinforcing means can improve the radiation resistance of the device to a certain extent, but does not radically change the formation process of radiation induced defects, and has the advantages of high reinforcing cost and limited effect.
Numerous studies have shown that hydrogen plays an important role in passivation and formation of radiation-induced defects in the oxide layer of semiconductor devices. A small amount of hydrogen in the high-temperature atmosphere can passivate interface dangling bonds, improve the interface characteristics of the device and improve the performance of the device; however, excessive hydrogen in the oxide layer greatly reduces the radiation resistance of the device, and defects formed in the oxide layer of the semiconductor device in a radiation environment can accelerate the cleavage of the excessive hydrogen in the oxide layer to form protons, which are the main contributors to the generation of radiation-induced interface trap charges. The hydrogen acts on radiation induced defects in the oxide layer as follows: when oxide trap charges are generated in the irradiation process (formula 1), excessive hydrogen in the oxide layer reacts with the oxide layer to generate H-containing defects and H+ (formula 2), H+ (formula 3) can be released by a certain probability when holes are captured again by the H-containing defects, and H+ can be transported to an interface under the action of an edge electric field force to participate in the formation process of the interface traps, so that the growth of the interface traps is promoted (formula 4).
V B H+h + →V B +H + (3)
H + +PbH→Pb + +H 2 (4)
Wherein V is B Represents oxide neutral traps, V B H represents a hydrogen-containing defect, pbH represents an interface Si-H bond, pb + Is the interface trap that most severely affects device performance. It can be seen that the control of the hydrogen content in the oxide layer plays an important role in improving the radiation resistance of the semiconductor device. Furthermore, studies have shown that: in the semiconductor device manufacturing process, hydrogen in the back-end process is a main source of hydrogen in the oxide layer of the device, such as the growth of passivation layers, heat treatment in a hydrogen atmosphere, and hydrogen release from the package case. Controlling hydrogen access to the oxide layer during these processes is critical to improving the radiation resistance of the semiconductor device.
At present, no related method for improving the radiation resistance of the semiconductor device process by controlling the hydrogen content in the oxide layer is available, but the traditional total dose resistance improving method has limited effect, complex implementation process and high cost.
Disclosure of Invention
In order to overcome the defects of insufficient total dose resistance and lack of effective oxide layer hydrogen content method existing in the application of a semiconductor device in a radiation environment, the invention provides a semiconductor device based on hydrogen control and a preparation method thereof.
The technical scheme adopted for solving the technical problems is as follows:
a semiconductor device based on hydrogen control comprises a passivation layer, a blocking absorption layer, an oxide layer and a silicon layer which are connected in sequence, wherein each layer is of a sheet-shaped structure.
The blocking absorption layer is a hydrogen blocking absorption layer and is used for blocking hydrogen from entering the oxidation layer and absorbing excessive hydrogen in the oxidation layer at the same time so as to realize the control of the hydrogen content in the oxidation layer.
In the semiconductor device based on hydrogen control, the barrier absorption layer is a titanium layer.
A method for manufacturing a semiconductor device based on hydrogen control, comprising the steps of:
first step, sheet flowing
The layout design of the semiconductor device based on hydrogen control is performed on the basis of the semiconductor device. And a blocking absorption layer is arranged on the surface of the oxidation layer, and the blocking absorption layer is positioned between the oxidation layer and the passivation layer to prevent hydrogen in the growth, encapsulation and environmental atmosphere of the passivation layer from entering the oxidation layer, so that isolation of the oxidation layer is realized.
Second step, preparation of the Barrier absorbent layer
And growing an oxide layer, a blocking absorption layer and a passivation layer in sequence based on the silicon layer.
Third step, packaging
And carrying out heat treatment and packaging on the semiconductor device based on hydrogen control.
In the above method for manufacturing a semiconductor device based on hydrogen control, the second step of manufacturing a barrier absorption layer further includes a barrier absorption layer optimization process including:
the manufactured semiconductor devices based on hydrogen control and the semiconductor devices in normal process are respectively divided into 2 groups, 4 groups are used for irradiation test, wherein each group of semiconductor devices based on hydrogen control and the semiconductor devices in normal process are in a zero bias state with all pins in short circuit grounding, and each group of semiconductor devices based on hydrogen control and the semiconductor devices in normal process are in a working bias state. The 4 groups of semiconductor devices were subjected to a comparative irradiation test, and the respective cumulative total dose values were recorded.
According to the requirement of improving the radiation resistance, selecting a semiconductor device based on hydrogen control, wherein the radiation resistance meets the requirement of the index, and the thickness and the material of a barrier absorption layer of the semiconductor device based on hydrogen control are the optimized thickness and the material of the barrier absorption layer.
According to the preparation method of the semiconductor device based on hydrogen control, in the comparative irradiation test, a cobalt source irradiation device is adopted, the irradiation dose rate is X, X=0.01 rad (Si)/s-0.10 rad (Si)/s, and the test dose point interval is 5-20 krad (Si).
In the preparation method of the semiconductor device based on hydrogen control, the barrier absorption layer is a titanium layer.
The beneficial effects of the invention are as follows:
the semiconductor device based on hydrogen control fully considers the formation process and main causes of ionizing radiation induced defect interface traps in the oxide layer of the semiconductor device, and the hydrogen blocking absorption layer is arranged from the source to prevent the formation process of the radiation induced defect interface traps, thereby achieving the purpose of improving the total dose resistance of the device.
A semiconductor device based on hydrogen control is characterized in that a hydrogen blocking absorption layer is added in a passivation layer, hydrogen in the growth, encapsulation and environment of the passivation layer is blocked from entering an oxidation layer of the device by utilizing the hydrogen blocking property of an added material, and excessive hydrogen in the oxidation layer is absorbed by utilizing the absorption effect of the added layer. Under the combined action of blocking and absorption, the hydrogen in the oxide layer will be effectively controlled.
The preparation method of the semiconductor device based on hydrogen control has the advantages that the hydrogen blocking absorption layer is positioned in the rear end process of the integrated circuit manufacturing process, the design structure of the device is not changed, the influence on the device regularity is small, the implementation is easy, the flow is simple, and the application prospect is good.
Drawings
FIG. 1 is a flow chart of the preparation method of the invention;
fig. 2 is a schematic diagram of the location of a hydrogen barrier layer in a semiconductor device.
In the figure: 1. a passivation layer; 2. a barrier absorber layer; 3. an oxide layer; 4. and a silicon layer.
Detailed Description
Examples 1, 2 and 3
A method for preparing semiconductor device based on hydrogen control adds H in passivation layer when passivation layer of back end process of semiconductor device fabrication process grows 2 Form a stiffening device. And determining the thickness of the optimal blocking absorption layer through experiments, and curing to form the device with improved radiation resistance. As shown in fig. 1, the specific process is as follows:
step 1, semiconductor device fabrication based on hydrogen control
Selecting a device to be reinforced, performing the conventional flow sheet manufacturing process step of the device until the metallization wiring process is finished, and depositing a hydrogen blocking and absorbing material layer in the passivation layer. The material layer is mainly used for preventing hydrogen in the growth, encapsulation and environmental atmosphere of the passivation layer from entering the oxidation layer on the surface of the base region, so that physical isolation of the oxidation layer on the surface of the base region is realized. And simultaneously, the material layer is used for adsorbing more hydrogen in the oxidation layer on the surface of the base region. Thereby achieving the purpose of controlling hydrogen in the oxide layer of the device. And carrying out full-parameter test on the manufactured device to obtain the semiconductor device based on hydrogen control.
First step, sheet flowing
Selecting a device to be reinforced, and performing a device layout design and flow sheet manufacturing process until the metallization wiring process is finished;
second step, preparation of the Barrier absorbent layer
In order to compare the effect of improving the radiation resistance of the device after the blocking absorption material layer is increased. The samples produced in the above steps are divided into two groups, and the first group is used for depositing a hydrogen barrier absorption layer, and the specific position diagram is shown in fig. 2. The second group served as a control group without any treatment. The barrier absorber materials used need to have good hydrogen barrier capability and be compatible with existing integrated circuit fabrication processes.
Third step, packaging
After the second step is completed, the subsequent device process manufacturing steps are carried out, and the subsequent device process manufacturing steps are consistent with the conventional device manufacturing process, and mainly comprise the processes of passivation, alloy, middle measurement, heat treatment, bonding, encapsulation and the like.
A semiconductor device based on hydrogen control and a normal process semiconductor device for comparison were obtained.
Step 2, barrier adsorption layer optimization
The thickness and material type of the barrier absorber layer affect the barrier absorption effect of hydrogen in the underlying oxide layer, and the thickness and material type of the barrier absorber layer need to be adjusted according to the repair effect of the actual process.
First step, device extraction
Randomly selecting N pieces of semiconductor devices based on hydrogen control and N=6-10 pieces of semiconductor devices in normal process, which are developed in the step 1, respectively;
second, setting the irradiation state
All devices extracted were tested for all parameters, as the total dose resistance of the device was related to the bias state. Therefore, it is desirable to test the radiation resistance of the device in different bias states. And performing irradiation tests on the manufactured semiconductor device based on hydrogen control and the semiconductor device in normal process respectively into 2 groups, wherein the first group is in a zero bias state in which all pins are in short circuit grounding, and the second group is in a working bias state.
The method for improving the radiation resistance based on the hydrogen blocking adsorption layer is mainly used for inhibiting the generation process of interface traps in a long-time radiation environment. Therefore, when evaluating the radiation resistance of the device, the cobalt source irradiation device should be used in a low dose radiation environment, and the irradiation dose rate X, x=between 0.1 and 0.01rad (Si)/s.
Table 1 parameters related to
| Example 1 | Example 2 | Example 3 | |
| N/piece | 6 | 8 | 10 |
| X/rad(Si)/s | 0.10 | 0.02 | 0.01 |
Third step, irradiation process
In the irradiation process, the device should be subjected to shift full-parameter test at fixed dose points, the test dose point interval is selected between 5-20 krad (Si), and the cumulative total dose value is recorded.
Fourth step, barrier absorber optimization
Comparing the test results in the third step of step 2, the increased barrier absorber layer is considered to be effective if the radiation resistance of the hydrogen-controlled semiconductor device is better than that of a normal process semiconductor device under both bias conditions. If the radiation resistance of the semiconductor device based on hydrogen control under two bias conditions is not improved or the improvement effect is not enough, the thickness of the blocking absorption layer can be increased or the material type can be changed, and the device can be manufactured again.
The process in step 2 is repeated again until a semiconductor device based on hydrogen control is obtained that satisfies the radiation resistance.
Step 3, forming a semiconductor device product based on hydrogen control
The locations given in step 1 and the values of the barrier absorber layer material type and thickness obtained in step 2 are used as a process flow for determining the fabrication of a semiconductor device based on hydrogen control and the product is fabricated.
Claims (6)
1. The semiconductor device based on hydrogen control is characterized by comprising a passivation layer (1), a blocking absorption layer (2), an oxide layer (3) and a silicon layer (4) which are connected in sequence, wherein the passivation layer, the blocking absorption layer and the silicon layer are of a lamellar structure;
the blocking absorption layer (2) is a hydrogen blocking absorption layer and is used for blocking hydrogen from entering the oxidation layer (3) and absorbing excessive hydrogen in the oxidation layer (3) at the same time so as to realize the control of the hydrogen content in the oxidation layer.
2. A semiconductor device based on hydrogen control according to claim 1, characterized in that the barrier absorber layer (2) is a titanium layer.
3. A method for manufacturing a semiconductor device based on hydrogen control, comprising the steps of:
step one, sheet flowing:
performing layout design of the semiconductor device based on hydrogen control based on the semiconductor device; a blocking absorption layer (2) is arranged on the surface of the oxide layer (3), the blocking absorption layer (2) is positioned between the oxide layer (3) and the passivation layer (1), and hydrogen in the growth, encapsulation and environmental atmosphere of the passivation layer (1) is prevented from entering the oxide layer (3), so that isolation of the oxide layer (3) is realized;
second, preparing a barrier absorption layer:
on the basis of a silicon layer (4), an oxide layer (3), a blocking absorption layer (2) and a passivation layer (1) are sequentially grown;
third, packaging:
and carrying out heat treatment and packaging on the semiconductor device based on hydrogen control.
4. The method for manufacturing a semiconductor device based on hydrogen control according to claim 3, wherein the second step of manufacturing a barrier absorber layer further comprises a barrier absorber layer (2) optimization, and the barrier absorber layer (2) optimization process comprises:
dividing the manufactured semiconductor devices based on hydrogen control and the semiconductor devices in normal process into 2 groups, which are 4 groups in total, and performing irradiation test, wherein each group of semiconductor devices based on hydrogen control and the semiconductor devices in normal process is in a zero bias state with all pins short-circuited to ground, and each group of semiconductor devices based on hydrogen control and the semiconductor devices in normal process is in a working bias state; performing a contrast irradiation test on the 4 groups of semiconductor devices, and recording respective cumulative total dose values;
according to the requirement of improving the radiation resistance, selecting a semiconductor device based on hydrogen control, wherein the radiation resistance meets the requirement of the index, and the thickness and the material of a barrier absorption layer of the semiconductor device based on hydrogen control are the optimized thickness and the material of the barrier absorption layer.
5. The method for manufacturing a semiconductor device based on hydrogen control according to claim 4, wherein the comparative irradiation test is performed using a cobalt source irradiation device at an irradiation dose rate of X, x=0.01 rad (Si)/s to 0.10rad (Si)/s, and the test dose point interval is 5-20 rad (Si).
6. The method for manufacturing a hydrogen-controlled semiconductor device according to claim 3, 4 or 5, characterized in that the barrier absorber layer (2) is a titanium layer.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1486512A (en) * | 2001-01-15 | 2004-03-31 | ���µ�����ҵ��ʽ���� | Semiconductor device and method for fabricating the same |
| JP2006216644A (en) * | 2005-02-02 | 2006-08-17 | Seiko Instruments Inc | Method for manufacturing semiconductor device |
| CN101017817A (en) * | 2006-02-10 | 2007-08-15 | 旺宏电子股份有限公司 | UV blocking and crack protecting passivation layer |
| CN104659060A (en) * | 2013-11-25 | 2015-05-27 | 乐金显示有限公司 | Array Substrate And Method Of Fabricating The Same |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1486512A (en) * | 2001-01-15 | 2004-03-31 | ���µ�����ҵ��ʽ���� | Semiconductor device and method for fabricating the same |
| JP2006216644A (en) * | 2005-02-02 | 2006-08-17 | Seiko Instruments Inc | Method for manufacturing semiconductor device |
| CN101017817A (en) * | 2006-02-10 | 2007-08-15 | 旺宏电子股份有限公司 | UV blocking and crack protecting passivation layer |
| CN104659060A (en) * | 2013-11-25 | 2015-05-27 | 乐金显示有限公司 | Array Substrate And Method Of Fabricating The Same |
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