CN116581075A - Method for manufacturing chip - Google Patents

Method for manufacturing chip Download PDF

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Publication number
CN116581075A
CN116581075A CN202310141466.2A CN202310141466A CN116581075A CN 116581075 A CN116581075 A CN 116581075A CN 202310141466 A CN202310141466 A CN 202310141466A CN 116581075 A CN116581075 A CN 116581075A
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CN
China
Prior art keywords
wafer
axis direction
holding table
reinforcing portion
annular reinforcing
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CN202310141466.2A
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Chinese (zh)
Inventor
杉山智瑛
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Disco Corp
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Disco Corp
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Publication of CN116581075A publication Critical patent/CN116581075A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention provides a method for manufacturing a chip, which can prevent a device from being damaged when an annular reinforcing part is removed, and can improve the productivity of the chip manufactured from a wafer. Before the removal step of removing the annular reinforcing portion, a singulation step of singulating the plurality of devices to manufacture chips is performed. That is, the removal step is performed in a state where the annular reinforcing portion is separated from the chips of the plurality of devices. Therefore, it is possible to prevent breakage of the device due to the force applied to the annular reinforcing portion in the removing step. Further, the annular reinforcing portion is removed and chips of a plurality of devices are manufactured without performing a process for separating the device region and the annular reinforcing portion of the wafer. Therefore, the productivity of the chip can be improved as compared with the manufacturing method of the chip including the step.

Description

Method for manufacturing chip
Technical Field
The present invention relates to a method for manufacturing a chip from a wafer having a peripheral region attached to a central region of a tape of an annular frame, the wafer having a back surface formed with a recess so that a device region in which a plurality of devices are formed is thinned and a remaining region around the periphery of the device region remains as an annular reinforcing portion.
Background
Chips of devices such as ICs (Integrated Circuit: integrated circuits) are indispensable components in various electronic devices such as mobile phones and personal computers. Such a chip is manufactured, for example, by dividing a wafer having a device region on which a plurality of devices are formed and a peripheral remaining region surrounding the device region on the front side along the boundaries of the plurality of devices, that is, singulating the plurality of devices.
For the purpose of miniaturization of the manufactured chips, the wafer is sometimes thinned before the dicing thereof. As a method for thinning a wafer, for example, grinding using a holding table for holding a wafer and a grinding wheel provided above the holding table and having a plurality of grinding tools arranged in a ring-like and discrete manner is cited. The grinding is generally performed in the following order.
First, the wafer is held by a holding table so that the back surface is exposed. Next, the holding table is moved so that the center of the back surface of the wafer is positioned directly below the track of the plurality of grinding tools when the grinding wheel is rotated. Then, the grinding wheel is lowered so that the plurality of grinding tools are brought into contact with the back surface of the wafer while rotating both the grinding wheel and the holding table. Thereby, the back surface side of the wafer is ground to thin the wafer.
However, when the wafer is thinned, the rigidity of the wafer is lowered and the wafer is liable to fracture. Thus, the following method is proposed: a recess is formed in the back surface of the wafer so that the device region of the wafer is thinned and the remaining peripheral region remains as an annular reinforcing portion. In this method, the back side of the wafer is ground as described above using a grinding wheel having an outer diameter shorter than the radius of the wafer, thereby forming a recess on the back side of the wafer.
Further, since the annular reinforcing portion is not required in manufacturing chips from the wafer, the annular reinforcing portion may be removed by grinding before singulation of the plurality of devices. However, when the annular reinforcing portion is ground, there is a possibility that a device region connected to the annular reinforcing portion may be damaged due to a force applied by the grinding, or a crack may be extended to the device region, and a device included in the device region may be broken.
In view of this, the following scheme is proposed: before the annular reinforcing portion is removed by grinding, the wafer is divided along the outer periphery of the device region, whereby the device region and the annular reinforcing portion are separated (for example, refer to patent document 1). Thus, breakage of the device included in the device region can be prevented.
Patent document 1: japanese patent laid-open No. 2021-72353
However, in the case of dividing the wafer along the outer periphery of the thinned device region, there is a possibility that the device included in the device region is broken due to a force applied by the division. Therefore, in order to avoid adverse effects on the device region, the division needs to be performed slowly. As a result, the productivity of chips manufactured from the wafer is reduced.
Disclosure of Invention
In view of this, an object of the present invention is to provide a method for manufacturing a chip, which can prevent breakage of a device when removing a ring-shaped reinforcing portion and can improve productivity of chips manufactured from a wafer.
According to the present invention, there is provided a method for manufacturing a chip from a wafer having a peripheral region attached to a central region of a tape of an annular frame, the wafer having a back surface on which a recess is formed so as to thin a device region in which a plurality of devices are formed and so that a remaining region around the periphery of the device region remains as an annular reinforcing portion, the method comprising the steps of: a singulation step of processing the wafer along boundaries of the plurality of devices, thereby singulating the plurality of devices to manufacture the chips; and a removing step of removing the annular reinforcing portion using a rotary cutting tool after the singulation step.
Preferably, in the singulation step, the plurality of devices are singulated using a rotating singulation cutting tool or a laser beam having a wavelength absorbed by the wafer.
In the present invention, a singulation step of singulating a plurality of devices to manufacture chips is performed before the removal step of removing the annular reinforcing portion. That is, in the present invention, the removal step is performed in a state where the annular reinforcing portion is separated from the chips of the plurality of devices. Therefore, in the present invention, it is possible to prevent breakage of the device due to the force applied to the annular reinforcing portion in the removing step.
In the present invention, the annular reinforcing portion can be removed and chips of a plurality of devices can be manufactured without performing a step for separating the device region and the annular reinforcing portion of the wafer. Therefore, in the present invention, the productivity of chips can be improved as compared with the method for manufacturing chips including the step.
Drawings
Fig. 1 (a) is a perspective view schematically showing an example of a frame unit including a wafer, and fig. 1 (B) is a cross-sectional view schematically showing the frame unit shown in fig. 1 (a).
Fig. 2 is a flowchart schematically showing an example of a method for manufacturing chips from a wafer included in a frame unit.
Fig. 3 (a) is a partial cross-sectional side view schematically showing one example of the singulation step, and fig. 3 (B) is a partial cross-sectional side view schematically showing another example of the singulation step.
Fig. 4 (a), 4 (B) and 4 (C) are partial cross-sectional side views schematically showing an example of the removal step.
Fig. 5 (a) and 5 (B) are partial cross-sectional side views schematically showing another example of the removal step, respectively.
Description of the reference numerals
2: a cutting device; 4: a holding table (4 a: frame); 6: a cutting unit (6 a: spindle; 6b, 6c: cutting tool); 8: a laser processing device; 10: a holding table (10 a: frame); 11: a frame unit (11 a: a groove); 12: a head; 13: a wafer (13 a: front surface; 13b: device region; 13c: peripheral remaining region; 13d: back surface; 13e: recess); 14: an annular reinforcing part; 15: a device; 17: a belt; 19: and an annular frame.
Detailed Description
Embodiments of the present invention will be described with reference to the accompanying drawings. Fig. 1 (a) is a perspective view schematically showing an example of a frame unit including a wafer, and fig. 1 (B) is a cross-sectional view schematically showing the frame unit shown in fig. 1 (a). The frame unit 11 shown in fig. 1 (a) and 1 (B) has a wafer 13 with a front surface 13a exposed.
The wafer 13 is made of a single crystal semiconductor material such as silicon (Si), silicon carbide (SiC), or gallium nitride (GaN), for example. Further, the wafer 13 has a device region 13b in which a plurality of devices 15 are formed, and a peripheral remaining region 13c surrounding the device region 13 b.
In the device region 13b, boundaries of the plurality of devices 15 are set in a lattice shape, and each of the plurality of linear portions included in the boundaries is also referred to as a line to divide. A recess 13e is formed in the back surface 13d of the wafer 13 so as to thin the device region 13b and leave the outer peripheral excess region 13c as the annular reinforcing portion 14.
A central region of a disk-shaped tape 17 having a larger diameter than the wafer 13 is adhered to the rear surface 13d of the wafer 13 so as to be in close contact with the wafer 13 in the recess 13e without a gap. The belt 17 has, for example: a film-like tape base material having flexibility; and an adhesive layer (paste layer) provided on the wafer 13 side of the tape base material.
The tape base material is composed of Polyolefin (PO), polyethylene terephthalate (PET), polyvinyl chloride (PVC), polystyrene (PS), or the like. The adhesive layer is made of ultraviolet-curable silicone rubber, an acrylic material, an epoxy material, or the like.
An annular frame 19 having an inner diameter larger than the diameter of the wafer 13 is attached to the outer peripheral region of the tape 17. The annular frame 19 is made of a metal material such as aluminum or stainless steel.
Fig. 2 is a flowchart schematically showing an example of a method for manufacturing chips from the wafer 13 included in the frame unit 11. In this method, first, the wafer 13 is processed along the boundaries of the plurality of devices 15, whereby the plurality of devices 15 are singulated to produce chips (singulation step: S1).
Fig. 3 (a) is a partial cross-sectional side view schematically showing an example of the singulation step (S1). In short, fig. 3a shows a case where a plurality of devices 15 are singulated using a rotating cutting tool (singulation tool) in a cutting apparatus.
The X1 axis direction and the Y1 axis direction shown in fig. 3a are directions perpendicular to each other on a horizontal plane, and the Z1 axis direction is a direction (vertical direction) perpendicular to the X1 axis direction and the Y1 axis direction, respectively.
The cutting device 2 shown in fig. 3 (a) has a holding table 4. The holding table 4 has a disk-shaped frame 4a having a diameter slightly smaller than the diameter of the recess 13e formed in the back surface 13d of the wafer 13.
The housing 4a is made of a metal material such as stainless steel or ceramic, for example. The housing 4a has a disk-shaped bottom wall and a cylindrical side wall erected from an outer peripheral region of the bottom wall. That is, a circular plate-shaped recess defined by a bottom wall and a side wall is formed on the upper surface side of the housing 4a.
A circular plate-shaped porous plate (not shown) having a diameter substantially equal to the diameter of the recess is fixed to the recess formed on the upper surface side of the housing 4a. The porous plate is made of, for example, porous ceramic.
The holding table 4 is connected to an X1 axis direction moving mechanism (not shown). The X1 axis direction moving mechanism includes, for example, a ball screw and a motor. When the X1-axis direction moving mechanism is operated, the holding table 4 moves along the X1-axis direction.
The holding table 4 is connected to a rotary drive source (not shown) such as a motor. When the rotation driving source is operated, the holding table 4 rotates about a straight line passing through the center of the upper surface of the holding table 4 and extending along the Z1 axis direction as the rotation axis.
The perforated plate of the holding table 4 communicates with a suction source (not shown) such as an ejector via a through hole formed in the bottom wall of the housing 4a. When the suction source is operated, a suction force acts on the space near the upper surface of the porous plate.
A plurality of jigs (not shown) are provided around the holding table 4 at substantially equal intervals along the circumferential direction of the holding table 4. The plurality of jigs can hold the ring frame 19 included in the frame unit 11, and fix the ring frame 19 at a position lower than the upper surface of the holding table 4.
When the frame unit 11 is carried into the cutting device 2, the wafer 13 is placed on the holding table 4 with the belt 17 interposed therebetween so that the recess 13e formed in the rear surface 13d of the wafer 13 is fitted to the upper portion of the holding table 4.
At this time, the ring frame 19 of the frame unit 11 is held by a plurality of jigs and fixed at a position lower than the upper surface of the holding table 4. When the suction source communicating with the porous plate of the holding table 4 is operated in this state, the wafer 13 is held on the holding table 4 via the belt 17.
A cutting unit 6 is provided above the holding table 4. The cutting unit 6 has a main shaft 6a extending in the Y1 axis direction. A cutting tool 6b is attached to the front end portion of the spindle 6a.
The base end portion of the spindle 6a is coupled to a rotation driving source (not shown) such as a motor. When the rotation driving source is operated, the cutting tool 6b rotates together with the spindle 6a about a straight line along the Y-axis direction as a rotation axis.
The cutting unit 6 is coupled to a Y1 axis direction moving mechanism (not shown) and a Z1 axis direction moving mechanism (not shown). The Y1-axis direction moving mechanism and the Z1-axis direction moving mechanism include, for example, a ball screw and a motor, respectively. When the Y1-axis direction moving mechanism and/or the Z1-axis direction moving mechanism are operated, the cutting unit 6 moves in the Y1-axis direction and/or the Z1-axis direction.
When the dicing apparatus 2 performs the singulation step (S1), first, a rotation driving source coupled to the holding table 4 rotates the holding table 4 so that a linear portion (line to be divided) included in the boundary between the plurality of devices 15 formed on the wafer 13 is parallel to the X1 axis direction.
Next, the X1 axis direction moving mechanism adjusts the position of the holding table 4, and/or the Y1 axis direction moving mechanism adjusts the position of the cutting unit 6 so as to position the division scheduled line parallel to the X1 axis direction in a plan view from the cutting tool 6b.
Next, the Z1 axis direction moving mechanism lifts the cutting unit 6 to position the lower end of the cutting tool 6b at a position lower than the bottom surface of the recess 13e formed in the back surface 13d of the wafer 13 and higher than the upper surface of the holding table 4.
Then, a rotation drive source coupled to the base end portion of the spindle 6a rotates the spindle 6a to rotate the cutting tool 6b. Next, the X1 axis direction moving mechanism moves the holding table 4 in the opposite direction to the X1 axis direction so that the lower end of the cutting tool 6b passes from one end to the other end of the wafer 13 in the X1 axis direction. Thereby, the wafer 13 is cut and divided on the dividing line.
In other words, grooves 11a penetrating the wafer 13 and exposing the tape 17 at the bottom surface are formed in the frame unit 11. The above-described steps are repeated until the wafer 13 is divided over all the boundaries of the plurality of devices 15. Thereby, the singulation step (S1) is completed.
The specific example of the singulation step (S1) is not limited to the above. Fig. 3 (B) is a partial cross-sectional side view schematically showing another example of the singulation step (S1). In short, fig. 3 (B) shows a case where a plurality of devices 15 are singulated in a laser processing apparatus using a laser beam having a wavelength absorbed by the wafer 13.
The X2 axis direction and the Y2 axis direction shown in fig. 3B are directions perpendicular to each other on the horizontal plane, and the Z2 axis direction is a direction (vertical direction) perpendicular to the X2 axis direction and the Y2 axis direction, respectively.
The laser processing apparatus 8 shown in fig. 3 (B) has a holding table 10. The holding table 10 has the same structure as the holding table 4 shown in fig. 3 (a). That is, the holding table 10 includes a disk-shaped frame 10a and a disk-shaped porous plate fixed to a recess formed on the upper surface side of the frame 10 a.
The holding table 10 is coupled to an X2 axis direction moving mechanism (not shown) and a Y2 axis direction moving mechanism (not shown). The X2-axis direction moving mechanism and the Y2-axis direction moving mechanism include, for example, a ball screw and a motor, respectively. When the X2-axis direction moving mechanism and/or the Y2-axis direction moving mechanism are operated, the holding table 10 is moved in the X2-axis direction and/or the Y2-axis direction.
The holding table 10 is coupled to a rotary drive source (not shown) such as a motor. When the rotation driving source is operated, the holding table 10 rotates about a straight line passing through the center of the upper surface of the holding table 10 and along the Z2 axis direction as the rotation axis.
The perforated plate of the holding table 10 communicates with a suction source (not shown) such as an ejector via a through hole formed in the bottom wall of the housing 10 a. When the suction source is operated, a suction force acts on the space near the upper surface of the porous plate.
A plurality of jigs (not shown) are provided around the holding table 10 at substantially equal intervals along the circumferential direction of the holding table 10. The plurality of jigs can hold the ring frame 19 included in the frame unit 11, and fix the ring frame 19 at a position lower than the upper surface of the holding table 10.
When the frame unit 11 is carried into the laser processing apparatus 8, the wafer 13 is placed on the holding table 10 with the belt 17 interposed therebetween so that the recess 13e formed in the rear surface 13d of the wafer 13 is fitted to the upper portion of the holding table 10.
At this time, the ring frame 19 of the frame unit 11 is held by a plurality of jigs and fixed at a position lower than the upper surface of the holding table 10. When the suction source communicating with the porous plate of the holding table 10 is operated in this state, the wafer 13 is held on the holding table 10 via the belt 17.
A head 12 of a laser beam irradiation unit is provided above the holding table 10. The head 12 accommodates an optical system such as a condenser lens and a mirror. The head 12 is coupled to a Z2 axis direction moving mechanism (not shown). The Z2 axis direction moving mechanism includes, for example, a ball screw, a motor, and the like. When the Z2 axis direction moving mechanism is operated, the head 12 moves in the Z2 axis direction.
The laser beam irradiation unit includes a laser oscillator (not shown) that generates a laser beam having a wavelength (for example, 355 nm) absorbed by the wafer 13. The laser oscillator has Nd as a laser medium: YAG, and the like. When the laser beam LB is generated by the laser oscillator, the laser beam LB is irradiated from the head 12 to the holding table 10 side via an optical system housed in the head 12.
When the singulation step (S1) is performed in the laser processing apparatus 8, first, the holding table 10 is rotated by a rotation drive source connected to the holding table 10 so that the linear portions (lines to be divided) included in the boundaries of the plurality of devices 15 formed on the wafer 13 are parallel to the X2 axis direction.
Next, the X2 axis direction moving mechanism and/or the Y2 axis direction moving mechanism adjusts the position of the holding table 10 so that the line to divide parallel to the X2 axis direction is positioned in the X2 axis direction in a plan view from the center of the head 12. Next, the Z2 axis direction moving mechanism lifts and lowers the head 12 so as to position the light condensing point of the laser beam LB irradiated from the head 12 at a height substantially equal to the front surface 13a of the wafer 13.
Next, while the laser beam LB is irradiated from the head 12 toward the wafer 13, the holding table 10 is moved in the opposite direction to the X2 axis direction by the X2 axis direction moving mechanism so that the laser beam LB passes from one end to the other end in the X2 axis direction of the wafer 13. Thereby, laser ablation is generated on the line to divide the wafer 13.
In other words, grooves 11a penetrating the wafer 13 and exposing the tape 17 at the bottom surface are formed in the frame unit 11. The above steps are repeated until the wafer 13 is divided at all the boundaries of the plurality of devices 15. Thereby, the singulation step (S1) is completed.
When the singulation step (S1) is performed as described above, the annular reinforcing portion 14 of the wafer 13 is separated from the chips of the plurality of devices 15. In the method shown in fig. 2, after the singulation step (S1), the annular reinforcing portion 14 is removed using a rotating cutting tool (removal step: S2).
Fig. 4 (a), 4 (B) and 4 (C) are partial cross-sectional side views schematically showing an example of the removal step (S2), respectively. In short, fig. 4 (a), 4 (B), and 4 (C) show a case where the annular reinforcing portion 14 is removed by bringing the outer peripheral surface of the rotating cutting tool (removing cutting tool) into contact with the upper surface of the annular reinforcing portion 14.
This removal step (S2) is performed in the cutting device 2 shown in fig. 3 (a), for example. In the cutting device 2, a cutting tool (cutting tool for removal) 6c is attached to the front end portion of the spindle 6a instead of the cutting tool (cutting tool for singulation) 6b before the removal step (S2) is performed.
The edge thickness (width along the Y1 axis direction) of the cutting tool 6c is larger than the edge thickness of the cutting tool 6b. For example, the edge thickness of the cutting tool 6c is slightly larger than the width of the annular reinforcing portion 14 along the radial direction of the wafer 13.
When the removal step (S2) is performed in the cutting device 2, first, the X1 axis direction moving mechanism adjusts the position of the holding table 4 and/or the Y1 axis direction moving mechanism adjusts the position of the cutting unit 6 so as to position the cutting tool 6c above one end of the annular reinforcing portion 14 in the Y1 axis direction (see fig. 4 (a)).
Then, a rotation drive source coupled to the base end portion of the spindle 6a rotates the spindle 6a to rotate the cutting tool 6 c. Next, while the cutting tool 6c is kept rotating, the Z1 axis direction moving mechanism lowers the cutting unit 6 until the outer peripheral surface of the cutting tool 6c contacts the belt 17 (see fig. 4 (B)).
Thereby, the cutting tool 6c cuts into the annular reinforcing portion 14, and removes one end of the annular reinforcing portion 14 in the Y1 axis direction. Next, while the cutting tool 6C is held to be rotated, the rotation driving source coupled to the holding table 4 rotates the holding table 4 so that the frame unit 11 rotates at least once (see fig. 4C).
Thereby, the annular reinforcing portion 14 is removed entirely. The specific example of the removal step (S2) is not limited to the above. For example, in the removing step (S2), the cutting tool 6c may be cut into the annular reinforcing portion 14 while rotating the holding table 4.
In addition, in the removing step (S2), the annular reinforcing portion 14 may be removed by grinding using the rotating cutting tool 6 c. Fig. 5 (a) and 5 (B) are partial cross-sectional side views schematically showing an example of such a removal step (S2), respectively.
When the removal step (S2) is performed in this way, first, the X1 axis direction moving mechanism adjusts the position of the holding table 4 and/or the Y1 axis direction moving mechanism adjusts the position of the cutting unit 6 so as to position the cutting tool 6c in the Y1 axis direction when seen in a plan view from one end of the annular reinforcing portion 14 in the Y1 axis direction.
Next, the Z1 axis direction moving mechanism lifts the cutting unit 6 so as to position the lower end of the cutting tool 6c at a height substantially equal to the lower surface of the annular reinforcing portion 14 (see fig. 5 a). Then, the spindle 6a is rotated by a rotation drive source connected to the base end portion of the spindle 6a, and the holding table 4 is rotated by a rotation drive source connected to the holding table 4 to rotate both the cutting tool 6c and the frame unit 11.
Next, while both the cutting tool 6c and the frame unit 11 are held in rotation, the Y1 axis direction moving mechanism brings the cutting unit 6 close to the holding table 4 until the side surface of the cutting tool 6c comes into contact with the belt 17 (see fig. 5 (B)). Thereby, the entire annular reinforcing portion 14 is removed by grinding with the cutting tool 6 c.
In the method for manufacturing a chip shown in fig. 2, a singulation step (S1) of singulating the plurality of devices 15 to manufacture a chip is performed before the removal step (S2) of removing the annular reinforcing portion 14. That is, in this method, the removal step (S2) is performed in a state where the annular reinforcing portion 14 is separated from the chips of the plurality of devices 15. Therefore, in this method, it is possible to prevent breakage of the device 15 due to the force applied to the annular reinforcing portion 14 in the removing step (S2).
In this method, the annular reinforcing portion 14 can be removed and chips of the plurality of devices 15 can be manufactured without performing a step for separating the device region 13b of the wafer 13 from the annular reinforcing portion 14. Therefore, in this method, the productivity of chips can be improved as compared with a method for manufacturing chips including this step.
In addition, the structure, method, and the like of the above embodiment can be modified and implemented as appropriate without departing from the scope of the object of the present invention.

Claims (2)

1. A method for manufacturing a chip from a wafer having a peripheral region attached to a central region of a tape of an annular frame, the wafer having a back surface formed with a recess so as to thin a device region in which a plurality of devices are formed and leave a remaining region around the periphery of the device region as an annular reinforcing portion,
the manufacturing method of the chip comprises the following steps:
a singulation step of processing the wafer along boundaries of the plurality of devices, thereby singulating the plurality of devices to manufacture the chips; and
and a removing step of removing the annular reinforcing portion using a rotary cutting tool after the singulation step.
2. The method for manufacturing a chip according to claim 1, wherein,
in the singulation step, the plurality of devices are singulated using a rotating singulation tool or a laser beam of a wavelength that is absorbed by the wafer.
CN202310141466.2A 2022-02-10 2023-02-08 Method for manufacturing chip Pending CN116581075A (en)

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JP2022019259A JP2023116893A (en) 2022-02-10 2022-02-10 Chip manufacturing method
JP2022-019259 2022-02-10

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