CN116571970A - Manufacturing process of high-quality aluminum vacuum cavity - Google Patents
Manufacturing process of high-quality aluminum vacuum cavity Download PDFInfo
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- CN116571970A CN116571970A CN202310728034.1A CN202310728034A CN116571970A CN 116571970 A CN116571970 A CN 116571970A CN 202310728034 A CN202310728034 A CN 202310728034A CN 116571970 A CN116571970 A CN 116571970A
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- Prior art keywords
- aluminum
- vacuum cavity
- welding
- cavity
- vacuum
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 238000003466 welding Methods 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims abstract description 29
- 238000004140 cleaning Methods 0.000 claims abstract description 27
- 238000005498 polishing Methods 0.000 claims abstract description 23
- 230000008569 process Effects 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 19
- 238000005242 forging Methods 0.000 claims abstract description 13
- 230000003647 oxidation Effects 0.000 claims abstract description 12
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 12
- 238000000137 annealing Methods 0.000 claims abstract description 7
- 238000005097 cold rolling Methods 0.000 claims abstract description 4
- 238000000227 grinding Methods 0.000 claims abstract description 4
- 239000002253 acid Substances 0.000 claims description 16
- 239000003795 chemical substances by application Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 12
- 238000005237 degreasing agent Methods 0.000 claims description 10
- 239000013527 degreasing agent Substances 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 238000003754 machining Methods 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000010407 anodic oxide Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000001125 extrusion Methods 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 238000005491 wire drawing Methods 0.000 claims description 3
- 238000001556 precipitation Methods 0.000 abstract description 7
- 239000012535 impurity Substances 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005406 washing Methods 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007743 anodising Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Forging (AREA)
Abstract
The application discloses a manufacturing process of a high-quality aluminum vacuum cavity, which comprises the following steps of S1: selecting an aluminum material with the purity of more than 99.99% for blanking; s2: forging and cold rolling an aluminum material; s3: annealing the aluminum block at the temperature of 250-350 ℃; s4: removing a surface oxide layer from the annealed aluminum block, and processing the aluminum block into an aluminum plate required by vacuum cavity welding; s5: assembling and welding an aluminum plate into a vacuum cavity; s6: grinding and polishing the welding part of the vacuum cavity; s7: and (3) performing anodic oxidation treatment on the surface of the vacuum cavity. The application adopts high-purity aluminum to manufacture the vacuum cavity, thereby reducing the precipitation of foreign matters in the use process of the vacuum cavity from the source and reducing the pollution to the cavity; the uniformity of the grain structure is ensured by adopting forging, annealing and other processes, so that the uniformity of the anodic oxidation treatment of the surface of the cavity in the later stage is ensured; the high-quality welding and polishing of the cavity are guaranteed by adopting the process coordination of welding, polishing, cleaning and the like, the problems of air holes, deformation and the like of welding seams are prevented, and the production yield of chips is guaranteed.
Description
Technical Field
The application relates to a manufacturing process of a vacuum cavity, in particular to a manufacturing process of a high-quality aluminum vacuum cavity.
Background
At present, in the manufacturing process of chips, a considerable part of working procedures are required to be completed in a vacuum cavity, and a common vacuum cavity used in the semiconductor industry is usually an aluminum alloy vacuum cavity.
However, the aluminum alloy vacuum cavity in the prior art has poor quality, and the problems of weld seam air holes, welding deformation, uneven anodic oxide film, precipitation of impurities and the like often exist; the problem of weld porosity and weld distortion can affect the vacuum sealing effect; the discharge problem can occur due to the non-uniformity of the anodic oxide film; the impurity precipitation can cause the pollution of the cavity; ultimately affecting the chip is the production yield.
Therefore, the applicant devised a process for manufacturing a high quality aluminum vacuum chamber to solve the above problems.
It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solution of the present application and is presented for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background of the application section.
Disclosure of Invention
In order to overcome the defects in the prior art, the application aims to provide a manufacturing process of a high-quality aluminum vacuum cavity.
To achieve the above and other related objects, the present application provides the following technical solutions: a manufacturing process of a high-quality aluminum vacuum cavity comprises the following steps:
s1: selecting an aluminum material with the purity of more than 99.99% for blanking;
s2: forging and cold rolling the aluminum material to obtain corresponding aluminum blocks;
s3: annealing the aluminum block at the temperature of 250-350 ℃ for 5-30 min;
s4: machining the annealed aluminum block, removing an oxide layer on the surface of the aluminum block, and machining the aluminum block into an aluminum plate with specified length, width and height required by vacuum cavity welding;
s5: assembling each aluminum plate and welding the aluminum plates into the vacuum cavity;
s6: grinding and polishing the welding part of the vacuum cavity;
s7: and carrying out anodic oxidation treatment on the surface of the vacuum cavity.
The high-purity aluminum material is selected to manufacture the vacuum cavity, the precipitation of foreign matters in the use process of the vacuum cavity is reduced from the source, and the quality of the vacuum cavity is ensured by matching with the corresponding cavity manufacturing process, so that the production yield of chips is ensured.
In one embodiment of the present application, in step S2, the aluminum material is forged and pressed on a press using a back extrusion method, and the raw material is forged and pressed back until the deformation amount of the aluminum material reaches 50% or more. The forging method can lead the grain structure to be uniform, have few coarse grains, and lead the fatigue strength and the corrosion resistance of the forging to be strong.
In one embodiment of the present application, each aluminum plate is cleaned prior to step S5; and during cleaning, a degreasing agent and an alkaline etching agent are sequentially used for cleaning the aluminum plate, then the aluminum plate is subjected to acid cleaning treatment, and finally the aluminum plate is cleaned by clean water to remove acid liquor and then dried. Degreasing agent is adopted to remove greasy dirt on the surface of the aluminum plate during cleaning, alkaline etching agent is adopted to remove natural oxides on the surface of the aluminum plate, alkaline etching agent is adopted to remove one kind of new oxides on the surface of the aluminum plate, and acid washing is adopted to remove two kinds of new oxides on the surface of the aluminum plate.
In an embodiment of the present application, in step S5, argon arc welding, laser welding or friction stir welding may be used for welding. The laser spot welder has simple welding operation, good depth-to-width ratio, small deformation and high welding speed. The argon arc welding has the advantages of concentrated heat, high temperature of an arc column, high welding production efficiency, narrow heat affected zone and small stress, deformation and crack tendency of welded weldments; the welding device is not limited by the position of the weldment, and can perform all-position welding. The microstructure change of the heat affected zone of the welded joint in friction stir welding is small, the residual stress is lower, and the welded workpiece is not easy to deform.
In one embodiment of the present application, in step S6, when polishing the vacuum chamber, all the processing surfaces of the vacuum chamber are polished three times by using a circular pneumatic polisher, the first using #80 sandpaper, the second using #120 sandpaper, the third using #240 sandpaper, and when polishing the sealing surface of the chamber, the pneumatic wire drawing machine of #320 is used to finish the sealing surface to a finish of 1.4-0.8. The processing surface and the sealing surface of the vacuum device are processed into high quality, so that the ultrahigh vacuum sealing effect of the surface of the vacuum device can be improved.
In one embodiment of the present application, before step S7, the vacuum chamber is cleaned and dried; and (3) cleaning the vacuum cavity by sequentially using a degreasing agent and an alkaline etching agent to clean the aluminum plate, then carrying out acid cleaning treatment on the vacuum cavity, cleaning the vacuum cavity by using clear water to remove acid liquor, and finally drying at the temperature of 80-100 ℃ for 6-8 h, and cooling after the drying is finished. Degreasing agent is adopted to remove greasy dirt on the surface of the vacuum cavity during cleaning, alkaline etching agent is adopted to remove natural oxides on the surface of the vacuum cavity, alkaline etching agent is adopted to remove one kind of new oxides on the surface of the vacuum cavity, and acid washing is adopted to remove two kinds of new oxides on the surface of the vacuum cavity.
In one embodiment of the present application, in step S7, the anodic oxidation is performed until the anodic oxide film thickness is between 30 and 50 μm. After the anodic oxidation treatment, better hardness and corrosion resistance can be obtained, and the film within the thickness range is hard, wear-resistant and good in corrosion resistance.
Due to the application of the technical scheme, compared with the prior art, the application has the following beneficial effects: according to the manufacturing process of the aluminum vacuum cavity, the high-purity aluminum material is adopted to manufacture the vacuum cavity, so that the precipitation of foreign matters in the use process of the vacuum cavity is reduced from the source, and the pollution to the cavity is reduced; the forging, annealing and other processes are adopted, so that the uniformity of a crystal grain structure is ensured, the uniformity of the surface anodic oxidation treatment of the later-stage vacuum cavity is ensured, and the discharge problem is reduced; the high-quality welding of the vacuum cavity and the high-quality polishing of the welding seam are ensured by adopting the cooperation of the processes of welding, polishing, cleaning and the like, the problems of air holes, deformation and the like of the welding seam are prevented, the high-vacuum state of the vacuum cavity is maintained, and the yield of chip production is ensured.
Drawings
FIG. 1 is a schematic illustration of the process of the present application;
Detailed Description
Further advantages and effects of the present application will become apparent to those skilled in the art from the disclosure of the present application, which is described by the following specific examples.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways than as described herein, and therefore the present application is not limited to the specific embodiments disclosed below.
As used in the specification and in the claims, the terms "a," "an," "the," and/or "the" are not specific to a singular, but may include a plurality, unless the context clearly dictates otherwise. In general, the terms "comprises" and "comprising" merely indicate that the steps and elements are explicitly identified, and they do not constitute an exclusive list, as other steps or elements may be included in a method or apparatus.
The relative arrangement of the components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present application unless it is specifically stated otherwise. Meanwhile, it should be understood that the sizes of the respective parts shown in the drawings are not drawn in actual scale for convenience of description. Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but should be considered part of the specification where appropriate. In all examples shown and discussed herein, any specific values should be construed as merely illustrative, and not a limitation. Thus, other examples of the exemplary embodiments may have different values. It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further discussion thereof is necessary in subsequent figures.
In the description of the present application, it should be understood that the azimuth or positional relationships indicated by the azimuth terms such as "front, rear, upper, lower, left, right", "lateral, vertical, horizontal", and "top, bottom", etc., are generally based on the azimuth or positional relationships shown in the drawings, merely to facilitate description of the present application and simplify the description, and these azimuth terms do not indicate and imply that the apparatus or elements referred to must have a specific azimuth or be constructed and operated in a specific azimuth, and thus should not be construed as limiting the scope of protection of the present application; the orientation word "inner and outer" refers to inner and outer relative to the contour of the respective component itself.
In addition, the terms "first", "second", etc. are used to define the components, and are only for convenience of distinguishing the corresponding components, and the terms have no special meaning unless otherwise stated, and therefore should not be construed as limiting the scope of the present application. Furthermore, although terms used in the present application are selected from publicly known and commonly used terms, some terms mentioned in the present specification may be selected by the applicant at his or her discretion, the detailed meanings of which are described in relevant parts of the description herein. Furthermore, it is required that the present application is understood, not simply by the actual terms used but by the meaning of each term lying within.
Spatially relative terms, such as "above … …," "above … …," "upper surface at … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial location relative to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations in use or operation in addition to the orientation depicted in the figures. The device may also be positioned in other different ways (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The preferred embodiments of the present application will be described in detail below with reference to the accompanying drawings so that the advantages and features of the present application can be more easily understood by those skilled in the art, thereby making clear and defining the scope of the present application.
Examples: referring to fig. 1, the present embodiment provides a process for manufacturing a high-quality aluminum vacuum chamber, which includes the following steps:
s1: selecting an aluminum material with the purity of more than 99.99% for blanking; firstly, the high-purity aluminum material is selected to manufacture the vacuum cavity, compared with the traditional aluminum alloy vacuum cavity, the vacuum cavity does not contain (or contains less) Mg, si, fe, cu, zn and other elements, and the precipitation of foreign matters in the use process of the vacuum cavity can be reduced from the source, so that the pollution to the cavity is reduced, and the production yield of chips is ensured.
S2: forging and cold rolling the aluminum material to obtain corresponding aluminum blocks; forging and pressing the aluminum material on a press machine by using a back extrusion method, and forging and pressing the raw material until the deformation of the aluminum material reaches more than 50%. The forging method can lead the grain structure to be uniform, lead coarse grains to be less, lead the fatigue strength and the corrosion resistance of the forging to be strong, and further ensure the manufacturing quality of the vacuum cavity.
S3: annealing the aluminum block at the temperature of 250-350 ℃ for 5-30 min; in the process steps, the average grain size of the annealed aluminum block is ensured to be within 200 mu m, the grain size of 90 percent is 50-300 mu m, the tensile strength is more than 100MPa, and the uniformity of the surface anodic oxidation treatment of the later vacuum cavity is ensured, so that the manufacturing quality of the vacuum cavity is ensured.
S4: machining the annealed aluminum block, removing an oxide layer on the surface of the aluminum block, and machining the aluminum block into an aluminum plate with specified length, width and height required by vacuum cavity welding; after the processing is finished, cleaning each aluminum plate; and during cleaning, a degreasing agent and an alkaline etching agent are sequentially used for cleaning the aluminum plate, then the aluminum plate is subjected to acid cleaning treatment, and finally the aluminum plate is cleaned by clean water to remove acid liquor and then dried. Degreasing agent is adopted to remove greasy dirt on the surface of the aluminum plate during cleaning, alkaline etching agent is adopted to remove natural oxides on the surface of the aluminum plate, alkaline etching agent is adopted to remove one kind of new oxides on the surface of the aluminum plate, and acid washing is adopted to remove two kinds of new oxides on the surface of the aluminum plate.
The processed aluminum plate is cleaned, and impurities such as greasy dirt, oxide and the like can be prevented from being welded into the body of the vacuum cavity together in the next step. The impurities are prevented from being separated out from the cavity under certain process conditions, and the pollution to the cavity is caused, so that the yield of the chip is influenced.
S5: assembling each aluminum plate and welding the aluminum plates into a vacuum cavity; the welding can be argon arc welding, laser welding or friction stir welding. The laser spot welder has simple welding operation, good depth-to-width ratio, small deformation and high welding speed. The argon arc welding has the advantages of concentrated heat, high temperature of an arc column, high welding production efficiency, narrow heat affected zone and small stress, deformation and crack tendency of welded weldments; the welding device is not limited by the position of the weldment, and can perform all-position welding. The microstructure change of the heat affected zone of the welded joint in friction stir welding is small, the residual stress is lower, and the welded workpiece is not easy to deform. In a specific implementation process, the welding depth of 6-12 is adopted for one-time fixed welding; the welding mode is selected according to actual conditions, is not limited to the argon arc welding, the laser welding or the friction stir welding, can be used for achieving the required welding effect, and can ensure the welding quality.
S6: grinding and polishing the welding part of the vacuum cavity; when polishing the vacuum cavity, polishing all the processing surfaces of the vacuum cavity for three times by using a circular pneumatic polisher, wherein the first time adopts #80 abrasive paper, the second time adopts #120 abrasive paper, the third time adopts #240 abrasive paper, and when polishing the sealing surface of the cavity, the pneumatic wire drawing machine of #320 is utilized to finish the sealing surface to 1.4-0.8. The gas in the vacuum sealing surface leaks along the processing trace, the vacuum cannot be maintained, and in order to maintain the high vacuum state, the welding part of the vacuum cavity is required to be grinded. The processing surface and the sealing surface of the vacuum device are processed into high quality, so that the ultrahigh vacuum sealing effect of the surface of the vacuum device can be improved. The polishing equipment is not limited to a round pneumatic polisher, the polishing times are not limited to three times, and the high quality polishing of the welding position of the vacuum cavity can be ensured.
After polishing, cleaning and drying the vacuum cavity; and (3) cleaning the vacuum cavity by sequentially using a degreasing agent and an alkaline etching agent to clean the aluminum plate, then carrying out acid cleaning treatment on the vacuum cavity, cleaning the vacuum cavity by using clear water to remove acid liquor, and finally drying at the temperature of 80-100 ℃ for 6-8 h, and cooling after the drying is finished. Degreasing agent is adopted to remove greasy dirt on the surface of the vacuum cavity during cleaning, alkaline etching agent is adopted to remove natural oxides on the surface of the vacuum cavity, alkaline etching agent is adopted to remove one kind of new oxides on the surface of the vacuum cavity, and acid washing is adopted to remove two kinds of new oxides on the surface of the vacuum cavity.
The polished vacuum cavity is cleaned, so that material impurities appearing when polished welding parts are left in the vacuum cavity can be avoided, the cavity is prevented from being polluted by the impurities, and the production yield of chips is prevented from being influenced.
S7: and (3) performing anodic oxidation treatment on the surface of the vacuum cavity. Anodizing until the thickness of the anodized film is between 30 and 50 mu m. The aluminum vacuum cavity is taken as an anode and placed in electrolyte solution, and an aluminum oxide film is formed on the surface of the aluminum vacuum cavity by utilizing electrolysis, so that better hardness and corrosion resistance can be obtained after anodic oxidation treatment. The barrier layer with semiconductor function can be arranged, the barrier layer is thin and compact, has high hardness and the function of preventing current from passing, and can prevent the problem of discharge.
According to the manufacturing process of the aluminum vacuum cavity, the high-purity aluminum material is adopted to manufacture the vacuum cavity, so that the precipitation of foreign matters in the use process of the vacuum cavity is reduced from the source, and the pollution to the cavity is reduced; the forging, annealing and other processes are adopted, so that the uniformity of a crystal grain structure is ensured, the uniformity of the surface anodic oxidation treatment of the later-stage vacuum cavity is ensured, and the discharge problem is reduced; the high-quality welding of the vacuum cavity and the high-quality polishing of the welding seam are ensured by adopting the cooperation of the processes of welding, polishing, cleaning and the like, the problems of air holes, deformation and the like of the welding seam are prevented, the high-vacuum state of the vacuum cavity is maintained, and the yield of chip production is ensured.
The above embodiments are only for illustrating the technical concept and features of the present application, and are intended to enable those skilled in the art to understand the content of the present application and to implement the same, but are not intended to limit the scope of the present application, and all equivalent changes or modifications made according to the spirit of the present application should be included in the scope of the present application.
Claims (7)
1. The manufacturing process of the high-quality aluminum vacuum cavity is characterized by comprising the following steps of:
s1: selecting an aluminum material with the purity of more than 99.99% for blanking;
s2: forging and cold rolling the aluminum material to obtain corresponding aluminum blocks;
s3: annealing the aluminum block at the temperature of 250-350 ℃ for 5-30 min;
s4: machining the annealed aluminum block, removing an oxide layer on the surface of the aluminum block, and machining the aluminum block into an aluminum plate with specified length, width and height required by vacuum cavity welding;
s5: assembling each aluminum plate and welding the aluminum plates into the vacuum cavity;
s6: grinding and polishing the welding part of the vacuum cavity;
s7: and carrying out anodic oxidation treatment on the surface of the vacuum cavity.
2. The process for manufacturing a high-quality aluminum vacuum chamber as claimed in claim 1, wherein: in step S2, the aluminum material is forged by a back extrusion method on a press machine, and the raw material is forged back and forth until the deformation amount of the aluminum material reaches 50% or more.
3. The process for manufacturing a high quality aluminum vacuum chamber according to claim 1, wherein each aluminum plate is cleaned prior to step S5; and during cleaning, a degreasing agent and an alkaline etching agent are sequentially used for cleaning the aluminum plate, then the aluminum plate is subjected to acid cleaning treatment, and finally the aluminum plate is cleaned by clean water to remove acid liquor and then dried.
4. The process for manufacturing a high-quality aluminum vacuum chamber as claimed in claim 1, wherein: in step S5, argon arc welding, laser welding, or friction stir welding may be used for welding.
5. The process for manufacturing a high-quality aluminum vacuum chamber as claimed in claim 1, wherein: in step S6, when polishing the vacuum cavity, polishing all the processing surfaces of the vacuum cavity three times by using a circular pneumatic polisher, wherein the first time adopts #80 abrasive paper, the second time adopts #120 abrasive paper, the third time adopts #240 abrasive paper, and when polishing the sealing surface of the cavity, the pneumatic wire drawing machine of #320 is used for polishing the sealing surface to achieve the smoothness of 1.4-0.8.
6. The process for manufacturing a high-quality aluminum vacuum chamber according to claim 1, wherein the vacuum chamber is cleaned and dried before step S7; and (3) cleaning the vacuum cavity by sequentially using a degreasing agent and an alkaline etching agent to clean the aluminum plate, then carrying out acid cleaning treatment on the vacuum cavity, cleaning the vacuum cavity by using clear water to remove acid liquor, and finally drying at the temperature of 80-100 ℃ for 6-8 h, and cooling after the drying is finished.
7. The process for manufacturing a high-quality aluminum vacuum chamber as claimed in claim 1, wherein: in step S7, the anodic oxidation treatment is carried out until the anodic oxide film thickness is between 30 and 50 mu m.
Priority Applications (1)
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CN202310728034.1A CN116571970A (en) | 2023-06-19 | 2023-06-19 | Manufacturing process of high-quality aluminum vacuum cavity |
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CN202310728034.1A CN116571970A (en) | 2023-06-19 | 2023-06-19 | Manufacturing process of high-quality aluminum vacuum cavity |
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