CN116564797A - Method for cleaning piezoelectric quartz wafer - Google Patents
Method for cleaning piezoelectric quartz wafer Download PDFInfo
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- CN116564797A CN116564797A CN202310383404.2A CN202310383404A CN116564797A CN 116564797 A CN116564797 A CN 116564797A CN 202310383404 A CN202310383404 A CN 202310383404A CN 116564797 A CN116564797 A CN 116564797A
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- 239000010453 quartz Substances 0.000 title claims abstract description 123
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 123
- 238000004140 cleaning Methods 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title claims abstract description 34
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 96
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 90
- 238000002791 soaking Methods 0.000 claims abstract description 37
- 239000007788 liquid Substances 0.000 claims abstract description 27
- 238000001035 drying Methods 0.000 claims abstract description 15
- 230000003749 cleanliness Effects 0.000 claims abstract description 8
- 235000012431 wafers Nutrition 0.000 claims description 117
- 238000005406 washing Methods 0.000 claims description 22
- 239000004576 sand Substances 0.000 claims description 10
- 229910001220 stainless steel Inorganic materials 0.000 claims description 10
- 239000010935 stainless steel Substances 0.000 claims description 10
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 8
- 239000012459 cleaning agent Substances 0.000 claims description 4
- 239000004744 fabric Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 4
- 239000012498 ultrapure water Substances 0.000 claims description 4
- 238000011010 flushing procedure Methods 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 10
- 239000000126 substance Substances 0.000 abstract description 10
- 239000013078 crystal Substances 0.000 abstract description 5
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000011221 initial treatment Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Emergency Medicine (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The technical scheme adopted by the method for cleaning the piezoelectric quartz wafer comprises seven steps of desanding and super-cleaning, preparing soaking liquid, soaking, removing the soaking liquid, super-cleaning by pure water, spin-drying by water control and checking cleanliness; through setting up the pure water rinse tank, put the quartz crystal into the pure water rinse tank in proper order and carry out the super-wash, the water control after the pure water super-wash, spin-dry, obtain the quartz crystal of the knot and clean. According to the method for cleaning the piezoelectric quartz wafer, disclosed by the invention, the use of hydrochloric acid or sulfuric acid is avoided by preparing the soaking liquid by using the citric acid, dangerous chemicals are not involved, and potential safety hazards are eliminated; the cleaned quartz wafer is clean and free of water stains and dirt, chemical pollution can not be caused on the premise of meeting the quality requirement of the quartz wafer, the cost is saved, and the environmental protection performance and the safety of the piezoelectric quartz wafer cleaning process are improved.
Description
Technical Field
The invention belongs to the technical field of wafer cleaning, and particularly relates to a piezoelectric quartz wafer cleaning method.
Background
The piezoelectric quartz crystal is used for manufacturing electronic components for selecting and controlling frequency, is widely applied to various fields of electronic information industry, such as color television, air conditioner, computer, DVD, wireless communication and the like, and is increasingly applied to high-performance electronic equipment and digital equipment; the surface cleanliness of the quartz wafer of the crystal component directly influences indexes such as resistance, aging rate and the like of the crystal resonator.
At present, the soaking liquid in the traditional process for cleaning the piezoelectric quartz wafer is prepared by using hydrochloric acid or sulfuric acid, and operators need special labor protection in the cleaning process because of the use of dangerous chemicals, so that more potential safety hazards exist, the environment-friendly emission treatment is troublesome, the operation process is complex, and the manpower and financial resources are wasted.
Disclosure of Invention
Aiming at the problems existing in the prior art, the invention provides a method for cleaning a piezoelectric quartz wafer, and aims to provide an environment-friendly, safe, nontoxic and harmless soaking solution: the citric acid soaking liquid replaces the soaking liquid prepared by hydrochloric acid or sulfuric acid in the quartz cleaning process, and solves the problem of potential safety hazards caused by dangerous chemicals.
The technical scheme adopted by the method for cleaning the piezoelectric quartz wafer comprises seven steps of sand removal and super-cleaning, soaking liquid preparation, soaking liquid removal, pure water super-cleaning, water control and spin-drying, and cleanliness inspection, and the specific technical process comprises the following steps: placing the ground quartz wafers into baskets, placing each basket of quartz wafers into pure water for washing, and performing ultrasonic cleaning with the frequency of 28KHZ to finish sand removal and super-washing of the quartz wafers; preparing a citric acid soaking solution in a citric acid pool by using water and citric acid according to a weight ratio of 20:1, when the PH value of the soaking solution is less than 2, putting a quartz wafer into the citric acid pool, soaking for 4 hours, and removing; placing the soaked quartz wafers into a basin filled with pure water, shaking and flushing each basket of quartz wafers, and performing normal-temperature super-washing after the pure water is cleaned to remove the citric acid remained on the quartz wafers; setting 3 pure water cleaning tanks, wherein the frequency of the 1 tank is 28KHZ, the water temperature is 35 ℃, the frequency of the 2 tank is 28KHZ, the water temperature is 55 ℃, the frequency of the 3 tank is 40KHZ, and the water temperature is 55 ℃; sequentially placing quartz wafers into the pretreated pure water cleaning tanks for super-cleaning, and super-cleaning each tank for 20min; placing the quartz wafer which is super-washed by pure water on a special frame for controlling water, placing the quartz wafer on a stainless steel cleaning bracket in a spin dryer when the quartz wafer is not dripped, spin-drying to obtain a finished quartz wafer, finally extracting the cleaned quartz wafer, placing the quartz wafer on a black cloth workbench, and checking and observing the cleanliness of the surface of the quartz wafer by using a 2-time magnifying glass.
Further, the quartz wafers of each basket are less than or equal to 550 pieces;
further, in the process of sand removal and super-washing of the quartz wafer, when the quartz wafer is washed by ultrasonic waves, the quartz wafer is placed in two layers, after super-washing is performed for 20min, the positions of the upper layer and the lower layer are replaced, and then super-washing is repeated for 20min;
further, in the process of removing the residual citric acid, pure water in the basin needs to be replaced every time when 6 basket quartz wafers are cleaned;
further, in the normal-temperature super-washing process, the weight ratio of the super-washing liquid is cleaning agent CL-208: ultrapure water=1: 30, the super-washing time is 5min;
further, the pretreatment of the pure water cleaning tank is to heat the pure water in each tank in advance and start the ultrasonic cleaner for 10 minutes to remove bubbles in the water;
further, the pure water cleaning tank has a tank 1 frequency of 28KHZ, a water temperature of 35 ℃, a tank 2 frequency of 28KHZ, a water temperature of 55 ℃, a tank 3 frequency of 40KHZ, a water temperature of 55 ℃, quartz wafers are taken out and put into the next pure water cleaning tank after shaking when the pure water cleaning tank is replaced;
further, the special frame is a hollowed-out bracket made of stainless steel, the front-back inclination angle is 30 degrees, and three quartz wafers are placed on each layer of the special frame;
further, the quartz wafers placed on the stainless steel cleaning brackets are not more than 6 layers, the brackets on two sides are balanced, and the weight error is not more than 0.5kg;
further, the temperature of the spin dryer is controlled to be 65-70 ℃ and the spin drying time is 20min.
Compared with the prior art, the invention has the following beneficial effects:
according to the method for cleaning the piezoelectric quartz wafer, disclosed by the invention, the use of hydrochloric acid or sulfuric acid is avoided by preparing the soaking solution by using the citric acid, dangerous chemicals are not involved, and potential safety hazards are eliminated; the cleaned quartz wafer is clean and free of water stains and dirt, chemical pollution can not be caused on the premise of meeting the quality requirement of the quartz wafer, the cost is saved, and the environmental protection performance and the safety of the piezoelectric quartz wafer cleaning process are improved.
Detailed Description
For a better understanding of the present invention, the present invention will be further described with reference to the following specific examples. The following examples are given in detail on the basis of the technology of the present invention, but the scope of protection of the present invention is not limited to the following examples.
The method for cleaning the piezoelectric quartz wafer provided by the invention comprises the steps of removing rust attached to the surface of the quartz wafer by using water and citric acid which are prepared according to a certain proportion as soaking liquid, removing the citric acid remained on the quartz wafer by purified water, and finally performing ultrasonic cleaning and water control spin-drying to achieve the cleaning effect on the quartz wafer; the specific cleaning steps are as follows:
(1) And (3) performing primary treatment on the quartz wafer: placing the ground quartz wafers into baskets, each basket is less than or equal to 550, then placing each basket of quartz wafers into normal-temperature pure water to rinse sand liquid among the wafers, then using ultrasonic waves with the frequency of 28KHZ for cleaning (hereinafter referred to as super-cleaning), placing the quartz wafers in two layers for super-cleaning for 20min each time, and then repeatedly super-cleaning the upper layer and the lower layer at the replacement positions for 20min to finish the sand removal super-cleaning of the quartz wafers;
(2) Preparing a soaking solution: preparing a citric acid soaking solution by using water and citric acid according to a weight ratio of 20:1, detecting by using PH test paper, and controlling the PH value to be less than 2;
(3) Immersing the quartz wafer in the immersion liquid: placing the quartz wafer in a prepared citric acid pool, and soaking for 4 hours;
(4) Removing residual soaking liquid on the surface of the quartz wafer: the soaked quartz wafers are moved out of a citric acid tank and put into a basin filled with pure water, each basket of quartz wafers is washed by shaking, the pure water in the basin needs to be replaced every 6 baskets of quartz wafers, after the pure water is washed, normal-temperature super-washing is carried out to remove the residual citric acid on the quartz wafers, and the weight ratio of the super-washing liquid is cleaning agent CL-208: ultrapure water=1: 30, the super-washing time is 5min;
(5) The quartz wafer is subjected to pure water ultra-washing: setting 3 pure water cleaning tanks, wherein the frequency of the 1 tank is 28KHZ, and the water temperature is 35 ℃; the frequency of the 2 grooves is 28KHZ, and the water temperature is 55 ℃; the frequency of the 3 groove is 40KHZ, and the water temperature is 55 ℃; heating the pure water in each tank, starting up an ultrasonic cleaning instrument for 10min to remove bubbles in the water, sequentially placing quartz wafers into a pure water cleaning tank for super-cleaning, super-cleaning for 20min in each tank, shaking the quartz wafers when the pure water cleaning tank is replaced, and then taking out the quartz wafers and placing the quartz wafers into a next pure water cleaning tank;
(6) And (3) obtaining a clean quartz wafer after water control and spin-drying: placing the super-washed quartz wafers on a special frame for controlling water, wherein the special frame is a hollow bracket made of stainless steel, the front-back inclination angle is 30 degrees, the bottom surface of a charging basket is placed between cross rods of the hollow bracket when the charging basket is placed, so that water can be rapidly discharged, each layer of the special frame is provided with three quartz wafers, when the quartz wafers are not dripped any more, the quartz wafers are placed on a stainless steel cleaning bracket in a drying machine, the quartz wafers placed on the stainless steel cleaning bracket are not more than 6 layers, the brackets on two sides are kept balanced, the weight error is not more than 0.5kg, the temperature of the drying machine is controlled at 65-70 ℃, the drying time is 20min, and the finished drying is obtained;
(7) Checking the cleanliness of the quartz wafer: a small amount of quartz wafer is extracted and placed on a black cloth workbench, and whether water stains and stains exist on the surface of the quartz wafer is checked by naked eyes under a double magnifying glass.
The service cycle of the citric acid soaking liquid is not more than 7 days, and the soaking liquid in the citric acid tank needs to be replaced when the service cycle is longer than the period; the quartz wafers are all placed in a charging basket to be washed together, water is controlled and spin-dried in the cleaning process. According to the invention, the citric acid is adopted to prepare the soaking liquid, so that the process of preparing the soaking liquid by using the original sulfuric acid and the hydrochloric acid is replaced, chemical pollution is not caused, the environmental protection performance of the piezoelectric quartz wafer cleaning process is improved, the cleaned quartz wafer is clean and free of water stains and stains, the quality requirement of the quartz wafer is met, dangerous chemicals are not used any more, and the potential safety hazard of the conventional piezoelectric quartz wafer cleaning process is eliminated.
The invention is illustrated in more detail by the following examples:
example 1:
(1) Sand removal and super-washing: grinding staff put the grinded quartz wafers into the basket according to the proportion of less than or equal to 550 wafers per basket, rinse the sand liquid among the wafers in a pure water basin, and then carry out ultrasonic cleaning; and placing 2 layers of quartz wafers each time, and then performing super-washing for 20min, and performing super-washing for 20min after the upper layer and the lower layer are replaced.
(2) Preparing a soaking solution: 70L of pure water is added into a citric acid pool, 3500g of citric acid is added for full stirring, pH test paper is used for testing acidity, the pH value is required to be less than 2, and the configuration time and the pH value are recorded.
(3) Soaking: and placing quartz wafers into a group of prepared citric acid tanks according to every 6 baskets, testing the PH value of the soaking liquid by using PH test paper before soaking, preparing a new soaking liquid by reusing citric acid when the PH value is more than 2, and replacing the service cycle of the citric acid soaking liquid for 4 hours at most when the PH value is less than 2 and meets the requirement.
(4) Removing the soaking liquid: removing the soaked quartz wafers from the citric acid pool, putting pure water into the basin, and shaking and rinsing one basket of quartz wafers in the basin, wherein the pure water is replaced once every 6 baskets are cleaned; after pure water cleaning, performing normal-temperature super-cleaning to remove the citric acid remained on the quartz wafer, wherein the weight ratio of the super-cleaning liquid is cleaning agent CL-208: ultrapure water=1: 30, the super-wash time is 5min.
(5) And (3) ultra-washing with pure water: heating pure water in the 3 cleaning tanks, starting up an ultrasonic cleaner for 10min to remove bubbles in the water, and then sequentially placing quartz wafers into the pure water cleaning tanks for super-cleaning, wherein each tank is subjected to super-cleaning for 20min; wherein the frequency of the 1 groove is 28KHZ, and the water temperature is 35 ℃; the frequency of the 2 grooves is 28KHZ, and the water temperature is 55 ℃; the 3-tank frequency was 40KHZ and the water temperature was 55deg.C.
(6) Controlling water and spin-drying: placing the super-washed quartz wafers on a special frame for controlling water, placing three quartz wafers on each layer of the special frame, wherein the front-back inclination angle is 30 degrees, and when the quartz wafers are not dripped any more, placing the quartz wafers on a stainless steel cleaning bracket in a dryer, and drying the quartz wafers for 20min at the temperature of 65-70 ℃.
(7) Checking cleanliness: 5% of quartz wafers are extracted and placed on a black cloth workbench, and placed under a 2-time magnifying glass, and the surfaces of the quartz wafers are observed by naked eyes to hardly have water stains and stains, and the waste soaking liquid does not cause any harm and chemical pollution.
The invention can be embodied in other forms according to the above preparation method, and is not exemplified. Therefore, any simple modification, equivalent variation and modification of the above embodiments according to the technical substance of the present invention without departing from the scope of the technical solution of the present invention will still fall within the scope of the technical solution of the present invention.
Claims (10)
1. A method for cleaning a piezoelectric quartz wafer, comprising the steps of: sand removal and super-washing, preparing soaking liquid, soaking, removing the soaking liquid, pure water and super-washing, water control and spin-drying, and checking cleanliness; specifically, the ground quartz wafers are put into baskets, each basket of quartz wafers is put into pure water for washing, ultrasonic cleaning with the frequency of 28KHZ is used, and sand removal and super-washing of the quartz wafers are completed; preparing a citric acid soaking solution in a citric acid pool by using water and citric acid according to a weight ratio of 20:1, when the PH value of the soaking solution is less than 2, putting a quartz wafer into the citric acid pool, soaking for 4 hours, and removing; placing the soaked quartz wafers into a basin filled with pure water, shaking and flushing each basket of quartz wafers, and performing normal-temperature super-washing after the pure water is cleaned to remove the citric acid remained on the quartz wafers; setting 3 pure water cleaning tanks, sequentially placing quartz wafers into the pretreated pure water cleaning tanks for super-cleaning, and super-cleaning each tank for 20min; placing the quartz wafer which is super-washed by pure water on a special frame for controlling water, placing the quartz wafer on a stainless steel cleaning bracket in a spin dryer when the quartz wafer is not dripped, spin-drying to obtain a finished quartz wafer, finally extracting the cleaned quartz wafer, placing the quartz wafer on a black cloth workbench, and checking and observing the cleanliness of the surface of the quartz wafer by using a 2-time magnifying glass.
2. A method of cleaning a piezoelectric quartz wafer according to claim 1, wherein the quartz wafer of each basket is 550 pieces or less.
3. The method for cleaning a piezoelectric quartz wafer according to claim 1, wherein during the sand removal and the ultrasonic cleaning of the quartz wafer, the quartz wafer is placed in two layers, and after the ultrasonic cleaning is performed for 20 minutes, the upper layer and the lower layer are replaced and the ultrasonic cleaning is repeated for 20 minutes.
4. A method for cleaning a piezoelectric quartz wafer according to claim 1, wherein the pure water in the basin is replaced every 6 basket quartz wafers are cleaned during the process of removing the residual citric acid.
5. The method for cleaning a piezoelectric quartz wafer according to claim 1, wherein in the normal temperature super-cleaning process, the weight ratio of the super-cleaning solution is cleaning agent CL-208: ultrapure water=1: 30, the super-wash time is 5min.
6. The method of claim 1, wherein the pretreatment of the pure water cleaning tank is to heat pure water in each tank in advance and start the ultrasonic cleaner for 10min to remove bubbles in the water.
7. A method for cleaning a piezoelectric quartz wafer according to claim 1, wherein the pure water cleaning tank has a tank frequency of 1 of 28KHZ, a water temperature of 35 ℃, a tank frequency of 2 of 28KHZ, a water temperature of 55 ℃, a tank frequency of 3 of 40KHZ, and a water temperature of 55 ℃, and the quartz wafer is taken out and put into the next pure water cleaning tank after shaking when the pure water cleaning tank is replaced.
8. The method for cleaning a piezoelectric quartz wafer according to claim 1, wherein the special frame is a hollow frame made of stainless steel and has a front-back inclination angle of 30 degrees, and three quartz wafers are placed on each layer of the special frame.
9. A method of cleaning a piezoelectric quartz wafer according to claim 1, wherein the stainless steel cleaning carriage is arranged to hold no more than 6 layers of quartz wafers and the two side carriages are balanced with a weight error of no more than 0.5kg.
10. The method for cleaning a piezoelectric quartz wafer according to claim 1, wherein the temperature of the spin dryer is controlled to be 65-70 ℃ and the spin-drying time is 20min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202310383404.2A CN116564797A (en) | 2023-04-12 | 2023-04-12 | Method for cleaning piezoelectric quartz wafer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310383404.2A CN116564797A (en) | 2023-04-12 | 2023-04-12 | Method for cleaning piezoelectric quartz wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116874000A (en) * | 2023-08-09 | 2023-10-13 | 湖北微流控科技有限公司 | Recycling method of micro-fluidic disk chip for total nitrogen water quality detection |
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2023
- 2023-04-12 CN CN202310383404.2A patent/CN116564797A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116874000A (en) * | 2023-08-09 | 2023-10-13 | 湖北微流控科技有限公司 | Recycling method of micro-fluidic disk chip for total nitrogen water quality detection |
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