CN116560195A - Graph correction method - Google Patents
Graph correction method Download PDFInfo
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- CN116560195A CN116560195A CN202210113692.5A CN202210113692A CN116560195A CN 116560195 A CN116560195 A CN 116560195A CN 202210113692 A CN202210113692 A CN 202210113692A CN 116560195 A CN116560195 A CN 116560195A
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- 238000012937 correction Methods 0.000 title claims abstract description 148
- 238000000034 method Methods 0.000 title claims abstract description 43
- 230000003287 optical effect Effects 0.000 claims abstract description 38
- 238000012986 modification Methods 0.000 abstract description 2
- 230000004048 modification Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
Abstract
A method of graphic modification, comprising: providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected; providing a first target layout, wherein the first target layout comprises a plurality of first target graphs which are in one-to-one correspondence with a plurality of graphs to be corrected; performing first optical proximity correction on the layout to be corrected to obtain a first corrected layout, wherein the first corrected layout comprises a plurality of first corrected figures corresponding to the figures to be corrected; acquiring first edge placement errors of a plurality of first correction patterns; determining a to-be-processed correction pattern in a plurality of first correction patterns based on each first edge placement error; acquiring target graphics to be compensated corresponding to the correction graphics to be processed from a plurality of first target graphics; compensating the target graph to be compensated according to the first edge placement error to obtain a second target graph; and carrying out second optical proximity correction on the correction pattern to be processed according to the second target pattern to obtain a second correction pattern. The method has accurate correction result.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a graph correction method.
Background
With the development of semiconductor technology, the critical dimensions of semiconductor structures are reduced, and the optical proximity effect in the photolithography process cannot be ignored or even affects the process flow, so that the optical proximity effect correction (Optical Proximity Correction, abbreviated as OPC) technology is a necessary means to make the exposure pattern reach the process requirements of each node. The optical proximity correction technique is to make the edge placement error (edge placement error, abbreviated EPE) between the final analog pattern and the target pattern as small as possible by continuously modifying the main pattern boundary.
However, for high nodes, in some special environments, due to mutual limitation of patterns between different layers or non-convergence of the optical proximity effect correction process, the edge placement errors of each edge of the patterns in the correction process are often difficult to synchronously optimize. For some edges with more severe limitations, the edge placement errors are more difficult to meet, and therefore more flexible optical proximity correction means are needed.
Disclosure of Invention
The invention solves the technical problem of providing a graph correction method to improve the accuracy of graph correction results.
In order to solve the above technical problems, the technical solution of the present invention provides a method for correcting a pattern, including: providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected; providing a first target layout, wherein the first target layout comprises a plurality of first target graphs, and the first target graphs are in one-to-one correspondence with a plurality of graphs to be corrected; performing first optical proximity correction on the to-be-corrected version graph to obtain a first corrected version graph, wherein the first corrected version graph comprises a plurality of first corrected graphs corresponding to the to-be-corrected graph; acquiring first edge placement errors of a plurality of first correction patterns; determining a to-be-processed correction pattern in a plurality of first correction patterns based on each first edge placement error; acquiring target graphics to be compensated corresponding to the correction graphics to be processed from the first target graphics; compensating the target graph to be compensated according to the first edge placement error to obtain a second target graph; and carrying out second optical proximity correction on the to-be-processed correction pattern according to the second target pattern to obtain a second correction pattern.
Optionally, the method for obtaining the first edge placement errors of the plurality of first correction patterns includes: dividing the outline of the first correction graph into a plurality of line segments; performing simulated exposure on the first corrected layout to obtain a first simulated exposure layout, wherein the first simulated exposure layout comprises a plurality of first simulated exposure patterns corresponding to the first corrected patterns; and acquiring a plurality of first edge placement errors between a plurality of line segments of the plurality of first simulated exposure pattern contours and the contours of the corresponding first target patterns.
Optionally, the acquiring the first edge placement errors between the line segments of the first simulated exposure pattern contours and the contours of the corresponding first target patterns includes: and calculating the offset between the line segment of the first simulated exposure pattern contour and the corresponding line segment of the first target pattern contour, and acquiring the first edge placement errors, wherein a plurality of line segments correspond to a plurality of first edge placement errors.
Optionally, the determining a to-be-processed correction pattern in the plurality of first correction patterns based on each of the first edge placement errors includes: and when the first edge placement error does not meet a preset condition, determining the first correction pattern as a correction pattern to be processed.
Optionally, the preset condition includes: the first edge placement error is 0.
Optionally, the compensating the target graph to be compensated according to the first edge placement error includes: if the first edge placement error is greater than 0, shrinking the outline segment corresponding to the target graph to be compensated, wherein the shrinking value is the absolute value of the first edge placement error; and if the first edge placement error is smaller than 0, expanding the outline segment corresponding to the target graph to be compensated, wherein the expansion value is the absolute value of the first edge placement error.
Optionally, the method for performing first optical proximity correction on the to-be-corrected version graph and obtaining the first corrected version graph includes: dividing the outline of the graph to be corrected into a plurality of line segments; performing simulated exposure on the to-be-corrected version graph to obtain a second simulated exposure graph, wherein the second simulated exposure graph comprises a plurality of second simulated exposure graphs corresponding to the to-be-corrected graph; acquiring second edge placement errors between a plurality of line segments of a second simulated exposure pattern and the contour line segments of the first target pattern; and correcting the outline of the graph to be corrected according to the second edge placement error, and obtaining a first correction layout after correction for a plurality of times.
Optionally, after the second correction pattern is acquired, the method further includes: performing simulated exposure on the second corrected graph to obtain a third simulated exposure layout, wherein the third simulated exposure layout comprises a plurality of third simulated exposure graphs corresponding to the second corrected graph, and the edge placement error between the contour of the third simulated exposure graph and the contour of the first target graph meets the preset condition.
Optionally, the rule of the first optical proximity correction includes a mask limit rule.
Optionally, the compensating the target graph to be compensated according to the first edge placement error includes: and compensating the target graph to be compensated according to the first edge placement error corresponding to the corrected graph to be processed.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
according to the technical scheme, the first edge placement errors of the first correction patterns are obtained, the target patterns to be compensated corresponding to the to-be-processed correction patterns, the first edge placement errors of which do not meet preset conditions, are compensated, the target layout is redefined, and then second optical proximity correction is conducted on the to-be-processed correction patterns, the first edge placement errors of which do not meet the preset conditions, according to the compensated second target patterns. By adjusting the target pattern, the correction result after the second optical proximity correction can be close to the initial first target pattern, so as to achieve the purpose of meeting the correction result. The correction process is more accurate.
Drawings
FIG. 1 is a schematic diagram of an optical correction process in one embodiment;
fig. 2 to 5 are schematic flow diagrams of a graph correction method according to an embodiment of the invention.
Detailed Description
As described in the background, a more flexible approach to optical proximity correction is needed. The analysis will now be described with reference to specific examples.
FIG. 1 is a schematic diagram of an optical correction process in one embodiment.
Referring to fig. 1, a layout to be modified 100 is provided, where the layout to be modified 100 includes a plurality of graphs to be modified 103; providing a target layout, wherein the target layout comprises a plurality of target graphs 102; and carrying out optical proximity correction on the to-be-corrected version 100 to obtain a corrected version, wherein the corrected version comprises a plurality of corrected figures 104.
In this embodiment, the to-be-corrected graph 100 is located on a lower-layer layout, where the lower-layer layout includes a plurality of lower-layer graphs 101, and two sides of a part of the to-be-corrected graph 103 in the first direction X have lower-layer graphs 101.
In the correction process, the distance between the correction pattern 104 and the lower pattern 101 on both sides must satisfy the condition of being greater than the minimum distance, so as to avoid the situation that the structures of the upper layer and the lower layer are shorted. Therefore, after multiple corrections, the edge placement error of the corrected pattern cannot be close to 0, and the correction result is not converged, so that the size of the corrected pattern 104 in the second direction Y becomes larger, and the edge placement error of the corrected pattern 104 in the second direction X cannot meet the requirement, and a good correction result cannot be obtained.
In order to solve the above problems, the technical solution of the present invention provides a pattern correction method, which compensates a target pattern to be compensated corresponding to a pattern to be processed, which has a first edge placement error that does not satisfy a preset condition, by obtaining first edge placement errors of a plurality of first correction patterns, redefines a target layout, and performs a second optical proximity correction on the pattern to be processed, which has a first edge placement error that does not satisfy the preset condition, according to a compensated second target pattern. By adjusting the target pattern, the correction result after the second optical proximity correction can be close to the initial first target pattern, so as to achieve the purpose of meeting the correction result. The correction process is more accurate.
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 2 to 5 are schematic flow diagrams of a graph correction method according to an embodiment of the invention.
Referring to fig. 2, the graph correction method includes:
step S10: providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected;
step S20: providing a first target layout, wherein the first target layout comprises a plurality of first target graphs, and the first target graphs are in one-to-one correspondence with a plurality of graphs to be corrected;
step S30: performing first optical proximity correction on the to-be-corrected version graph to obtain a first corrected version graph, wherein the first corrected version graph comprises a plurality of first corrected graphs corresponding to the to-be-corrected graph;
step S40: acquiring first edge placement errors of a plurality of first correction patterns;
step S50: determining a to-be-processed correction pattern in a plurality of first correction patterns based on each first edge placement error;
step S60: acquiring target graphics to be compensated corresponding to the correction graphics to be processed from the first target graphics;
step S70: compensating the target graph to be compensated according to the first edge placement error to obtain a second target graph;
step S80: and carrying out second optical proximity correction on the to-be-processed correction pattern according to the second target pattern to obtain a second correction pattern.
According to the correction method, first edge placement errors of a plurality of first correction patterns are obtained, target patterns to be compensated corresponding to the to-be-processed correction patterns, the first edge placement errors of which do not meet preset conditions, are compensated, target layouts are redefined, and second optical proximity correction is conducted on the to-be-processed correction patterns, the first edge placement errors of which do not meet the preset conditions, according to the compensated second target patterns. By adjusting the target pattern, the correction result after the second optical proximity correction can be close to the initial first target pattern, so as to achieve the purpose of meeting the correction result. The correction process is more accurate.
Next, each step will be described separately.
With continued reference to fig. 2, step S10 is performed: providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected.
The layout to be corrected is a mask layout needing optical proximity correction.
With continued reference to fig. 2, step S20 is performed: providing a first target layout, wherein the first target layout comprises a plurality of first target graphs, and the first target graphs are in one-to-one correspondence with a plurality of graphs to be corrected.
The first target layout is a layout which is formed after the to-be-corrected version is required to be corrected.
With continued reference to fig. 2, step S30 is performed: and carrying out first optical proximity correction on the to-be-corrected version graph to obtain a first corrected version graph, wherein the first corrected version graph comprises a plurality of first corrected graphs corresponding to the to-be-corrected graph.
The first correction layout is a layout in which the edge placement errors are primarily converged after optical proximity correction is performed on the to-be-corrected version image for a plurality of times.
Referring to fig. 3, in this embodiment, a method for performing a first optical proximity correction on the to-be-corrected version image to obtain a first corrected version image includes:
step S301: dividing the outline of the graph to be corrected into a plurality of line segments;
step S302: performing simulated exposure on the to-be-corrected version graph to obtain a second simulated exposure graph, wherein the second simulated exposure graph comprises a plurality of second simulated exposure graphs corresponding to the to-be-corrected graph;
step S303: acquiring second edge placement errors between a plurality of line segments of a second simulated exposure pattern and the contour line segments of the first target pattern;
step S304: and correcting the outline of the graph to be corrected according to the second edge placement error, and obtaining a first correction layout after correction for a plurality of times.
The first optical proximity correction rule comprises a mask limit rule. The reticle constraint rule is a rule of minimum pitch that must be satisfied by adjacent patterns.
The obtaining a second edge placement error between the plurality of line segments of the second simulated exposure pattern and the first target pattern contour line segment includes: and calculating the offset between the line segment of the second simulated exposure pattern contour and the corresponding line segment of the first target pattern contour, and acquiring the second edge placement errors, wherein a plurality of line segments correspond to a plurality of second edge placement errors.
With continued reference to fig. 2, step S40 is performed: and acquiring first edge placement errors of a plurality of first correction patterns.
Referring to fig. 4, in the present embodiment, a method for obtaining a first edge placement error of a plurality of first correction patterns includes:
step S401: dividing the outline of the first correction graph into a plurality of line segments;
step S402: performing simulated exposure on the first corrected layout to obtain a first simulated exposure layout, wherein the first simulated exposure layout comprises a plurality of first simulated exposure patterns corresponding to the first corrected patterns;
step S403: and acquiring a plurality of first edge placement errors between a plurality of line segments of the plurality of first simulated exposure pattern contours and the contours of the corresponding first target patterns.
The obtaining a plurality of first edge placement errors between a plurality of line segments of the plurality of first simulated exposure pattern contours and the corresponding contours of the first target patterns includes: and calculating the offset between the line segment of the first simulated exposure pattern contour and the corresponding line segment of the first target pattern contour, and acquiring the first edge placement errors, wherein a plurality of line segments correspond to a plurality of first edge placement errors.
With continued reference to fig. 2, step S50 is performed: and determining a to-be-processed correction pattern in the plurality of first correction patterns based on each first edge placement error.
In this embodiment, when the first edge placement error does not meet a preset condition, the first correction pattern is determined to be a correction pattern to be processed.
In this embodiment, the preset condition includes: the first edge placement error is 0. In other words, in the first correction pattern, when the first edge placement error of the first correction pattern is greater than 0 or less than 0, the first correction pattern is a correction pattern to be processed.
In other embodiments, the preset condition may be other conditions.
With continued reference to fig. 2, step S60 is performed: and acquiring target graphics to be compensated corresponding to the correction graphics to be processed from the first target graphics.
The first target graphics are in one-to-one correspondence with the first correction graphics, so that target graphics to be compensated corresponding to the correction graphics to be processed are obtained.
With continued reference to fig. 2, step S70 is performed: and compensating the target graph to be compensated according to the first edge placement error, and obtaining a second target graph.
Referring to fig. 5, in this embodiment, the method for compensating the target pattern to be compensated according to the first edge placement error includes:
step S701: if the first edge placement error is greater than 0, shrinking the outline segment corresponding to the target graph to be compensated, wherein the shrinking value is the absolute value of the first edge placement error;
step S702: and if the first edge placement error is smaller than 0, expanding the outline segment corresponding to the target graph to be compensated, wherein the expansion value is the absolute value of the first edge placement error.
And redefining a target layout by compensating the target graph to be compensated corresponding to the to-be-processed correction graph of which the first edge placement error does not meet the preset condition, and performing second optical proximity correction on the to-be-processed correction graph of which the first edge placement error does not meet the preset condition according to the compensated second target graph. By adjusting the target pattern, the correction result after the second optical proximity correction can be close to the initial first target pattern, so as to achieve the purpose of meeting the correction result. The correction process is more accurate.
With continued reference to fig. 2, step S80 is performed: and carrying out second optical proximity correction on the to-be-processed correction pattern according to the second target pattern to obtain a second correction pattern.
And carrying out second optical proximity correction on the pattern to be corrected according to the adjusted second target pattern, wherein the correction result after the second optical proximity correction can be close to the initial first target pattern so as to achieve the purpose of meeting the correction result.
In this embodiment, after the second correction pattern is acquired, further includes: and performing simulated exposure on the second corrected graph to obtain a third simulated exposure layout, wherein the third simulated exposure layout comprises a plurality of third simulated exposure graphs corresponding to the second corrected graph.
And the edge placement error between the outline of the third simulation exposure pattern and the outline of the first target pattern meets the preset condition. Therefore, the purpose of meeting the correction result is achieved, and the correction process is more accurate.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.
Claims (10)
1. A pattern correction method, comprising:
providing a layout to be corrected, wherein the layout to be corrected comprises a plurality of graphs to be corrected;
providing a first target layout, wherein the first target layout comprises a plurality of first target graphs, and the first target graphs are in one-to-one correspondence with a plurality of graphs to be corrected;
performing first optical proximity correction on the to-be-corrected version graph to obtain a first corrected version graph, wherein the first corrected version graph comprises a plurality of first corrected graphs corresponding to the to-be-corrected graph;
acquiring first edge placement errors of a plurality of first correction patterns;
determining a to-be-processed correction pattern in a plurality of first correction patterns based on each first edge placement error;
acquiring target graphics to be compensated corresponding to the correction graphics to be processed from the first target graphics;
compensating the target graph to be compensated according to the first edge placement error to obtain a second target graph;
and carrying out second optical proximity correction on the to-be-processed correction pattern according to the second target pattern to obtain a second correction pattern.
2. The pattern correction method as claimed in claim 1, wherein the method of acquiring the first edge placement errors of the plurality of first corrected patterns comprises:
dividing the outline of the first correction graph into a plurality of line segments;
performing simulated exposure on the first corrected layout to obtain a first simulated exposure layout, wherein the first simulated exposure layout comprises a plurality of first simulated exposure patterns corresponding to the first corrected patterns;
and acquiring a plurality of first edge placement errors between a plurality of line segments of the plurality of first simulated exposure pattern contours and the contours of the corresponding first target patterns.
3. The pattern correction method according to claim 2, wherein the obtaining a plurality of first edge placement errors between a plurality of line segments of the plurality of first analog exposure pattern contours and the contours of the corresponding first target patterns includes: and calculating the offset between the line segment of the first simulated exposure pattern contour and the corresponding line segment of the first target pattern contour, and acquiring the first edge placement errors, wherein a plurality of line segments correspond to a plurality of first edge placement errors.
4. The pattern correction method according to claim 1, wherein the determining a correction pattern to be processed among the plurality of first correction patterns based on each of the first edge placement errors includes:
and when the first edge placement error does not meet a preset condition, determining the first correction pattern as a correction pattern to be processed.
5. The pattern correction method as claimed in claim 4, wherein said preset condition includes: the first edge placement error is 0.
6. The pattern correction method according to claim 5, wherein said compensating the target pattern to be compensated based on the first edge placement error includes:
if the first edge placement error is greater than 0, shrinking the outline segment corresponding to the target graph to be compensated, wherein the shrinking value is the absolute value of the first edge placement error;
and if the first edge placement error is smaller than 0, expanding the outline segment corresponding to the target graph to be compensated, wherein the expansion value is the absolute value of the first edge placement error.
7. The method for modifying a pattern according to claim 1, wherein the performing a first optical proximity correction on the to-be-modified version to obtain a first modified layout includes:
dividing the outline of the graph to be corrected into a plurality of line segments;
performing simulated exposure on the to-be-corrected version graph to obtain a second simulated exposure graph, wherein the second simulated exposure graph comprises a plurality of second simulated exposure graphs corresponding to the to-be-corrected graph;
acquiring second edge placement errors between a plurality of line segments of a second simulated exposure pattern and the contour line segments of the first target pattern;
and correcting the outline of the graph to be corrected according to the second edge placement error, and obtaining a first correction layout after correction for a plurality of times.
8. The pattern correction method according to claim 1, further comprising, after the second corrected pattern is acquired: performing simulated exposure on the second corrected graph to obtain a third simulated exposure layout, wherein the third simulated exposure layout comprises a plurality of third simulated exposure graphs corresponding to the second corrected graph, and the edge placement error between the contour of the third simulated exposure graph and the contour of the first target graph meets the preset condition.
9. The pattern correction method according to claim 1, wherein the first optical proximity correction rule includes a reticle restriction rule.
10. The pattern correction method according to claim 1, wherein the compensating the target pattern to be compensated according to the first edge placement error includes: and compensating the target graph to be compensated according to the first edge placement error corresponding to the corrected graph to be processed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210113692.5A CN116560195A (en) | 2022-01-30 | 2022-01-30 | Graph correction method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210113692.5A CN116560195A (en) | 2022-01-30 | 2022-01-30 | Graph correction method |
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| CN116560195A true CN116560195A (en) | 2023-08-08 |
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| CN202210113692.5A Pending CN116560195A (en) | 2022-01-30 | 2022-01-30 | Graph correction method |
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