CN116540148A - Leakage test circuit of TBU device under high pressure - Google Patents
Leakage test circuit of TBU device under high pressure Download PDFInfo
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- CN116540148A CN116540148A CN202310823756.5A CN202310823756A CN116540148A CN 116540148 A CN116540148 A CN 116540148A CN 202310823756 A CN202310823756 A CN 202310823756A CN 116540148 A CN116540148 A CN 116540148A
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- tbu
- resistor
- power supply
- switch tube
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- 238000012360 testing method Methods 0.000 title claims abstract description 29
- 239000003990 capacitor Substances 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 2
- 230000001012 protector Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
- G01R31/52—Testing for short-circuits, leakage current or ground faults
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention discloses a leakage test circuit of a TBU device under high voltage, which belongs to the technical field of leakage test and comprises a first power supply, a second power supply and a first capacitor, wherein the positive electrode of the first power supply is connected with the anode of the first switch tube, the negative electrode of the first switch tube is connected with the first end of the TBU device, the positive electrode of the second power supply is connected with the first end of the TBU device, the negative electrode of the first power supply is grounded, the second end of the TBU device is grounded, the negative electrode of the second power supply is grounded, the first capacitor is connected with two ends of the first power supply in parallel, the gate electrode of the first switch tube is connected with the collector of the second switch tube, the collector of the second switch tube is grounded, the emitter of the second switch tube is connected with a third power supply, the base electrode of the second switch tube is connected with a first port, and the first port is connected with a TTL level signal. The leakage test circuit of the TBU device under high voltage has a simple structure and is easy to realize.
Description
Technical Field
The invention relates to the technical field of leakage testing, in particular to a leakage testing circuit of a TBU device under high voltage.
Background
The TBU high-speed protector is used as an overcurrent protection device, and has the advantages of capability of blocking main energy outside, high reaction speed, high voltage blocking, no capacitance and magnetism problem, convenience in design and the like, so that the TBU high-speed protector is widely applied to the fields of communication, medical treatment, industry, consumer electronics and the like.
The TBU device has the characteristic of larger current at low voltage and smaller current at high voltage, such as the device with model number TBU-CA085-200-WH of Bourns company, and the VI curve is shown in figure 1, the current value at low voltage is 200mA-400mA, and the current value at high voltage is about 1mA, wherein the region S1 is a large current stage, and the region S2 is a small current stage.
The current limiting point of the high-voltage power supply on the market is low, such as a power supply with the model Keithley 2657A, the current limiting point below 1500V is 120mA, the minimum current of the TBU device under low voltage is smaller than 200mA, if the high-voltage power supply is directly connected to two ends of the TBU device, when the voltage of the high-voltage power supply rises from low to high, the current of the high-voltage power supply is limited to 120mA, and the voltage at two ends of the TBU device cannot be added to a set high-voltage value, so that the leakage of the TBU device under high voltage cannot be measured.
Disclosure of Invention
In order to solve the problems, the invention provides a leakage test circuit of a TBU device under high voltage.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
the utility model provides a leakage test circuit of TBU device under high pressure, includes first power, second power, first electric capacity, first switch tube and second switch tube, the positive pole of first power is connected the positive pole of first switch tube, the first end of TBU device is connected to the negative pole of first switch tube, the positive pole of second power is connected the first end of TBU device, the negative pole ground of first power, the second ground of TBU device is earthed, the negative pole ground of second power, first electric capacity is parallelly connected in first power both ends, the collector of second switch tube is connected to the gate of first switch tube, the collector ground of second switch tube, the third power is connected to the projecting pole of second switch tube, the first port is connected to the base of second switch tube, TTL level signal is connected to the first port.
The voltage of the first power supply is smaller than that of the second power supply.
In a specific embodiment, the leakage test circuit of a TBU device under high voltage further includes a first diode, wherein a cathode of the first diode is connected to a gate of the first switching tube, and an anode of the first diode is connected to a collector of the second switching tube.
In a specific embodiment, the leakage test circuit of a TBU device under high voltage further includes a first resistor, a first end of the first resistor is connected to an anode of the first power supply, and a second end of the first resistor is connected to an anode of the first switching tube.
In a specific embodiment, the leakage test circuit of a TBU device under high voltage further includes a second resistor, a first end of the second resistor is connected to an anode of the first diode, and a second end of the second resistor is connected to a collector of the second switching tube.
In a specific embodiment, the leakage test circuit of a TBU device under high voltage further includes a third resistor, a first end of the third resistor is connected to a collector of the second switching tube, and a second end of the third resistor is grounded.
In a specific embodiment, the leakage test circuit of a TBU device under high voltage further includes a fourth resistor, a first end of the fourth resistor is connected to the third power supply, and a second end of the fourth resistor is connected to the base electrode of the second switching tube.
In a specific embodiment, the leakage test circuit of a TBU device under high voltage further includes a fifth resistor, where a first end of the fifth resistor is connected to a second end of the fourth resistor, and a second end of the fifth resistor is connected to the first port.
In one embodiment, the first switching tube is a thyristor.
In an embodiment, the second switch tube is a PNP transistor.
The leakage test circuit of the TBU device under high pressure has the advantages of simple structure and easy realization; the transient leakage detection under high voltage is realized by adopting TTL level signals, so that the TBU device is prevented from being under high voltage for a long time, and the protection effect is achieved.
In order to make the above features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
FIG. 1 is a schematic diagram of the VI curve of a TBU-CA085-200-WH device.
Fig. 2 is a schematic diagram of a leakage test circuit of a TBU device under high voltage according to the present invention.
FIG. 3 is a schematic diagram of an embodiment of FIG. 2.
Detailed Description
In order to make the purpose and technical solutions of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which can be made by a person skilled in the art without creative efforts, based on the described embodiments of the present invention fall within the protection scope of the present invention.
Fig. 2 is a schematic diagram of a leakage test circuit of a TBU device under high voltage according to the present invention. As shown in fig. 2, the positive electrode of the power supply V1 is connected with the positive electrode of the switching tube Q1, the negative electrode of the switching tube Q1 is connected with the first end of the TBU device, the positive electrode of the power supply V2 is connected with the first end of the TBU device, the negative electrode of the power supply V1 is grounded, the second end of the TBU device is grounded, the negative electrode of the power supply V2 is grounded, the capacitor C1 is connected with two ends of the power supply V1 in parallel, the gate electrode of the switching tube Q1 is connected with the collector electrode of the switching tube Q2, the collector electrode of the switching tube Q2 is grounded, the emitter electrode of the switching tube Q2 is connected with the auxiliary power supply Vcc, the base electrode of the switching tube Q2 is connected with the port P1, the port P1 is connected with a signal generator (not shown in the figure), and the signal generator outputs a TTL level signal.
More specifically, the power source V1 is a low voltage power source.
More specifically, the power source V2 is a high-voltage power source.
More specifically, the switching tube Q1 is a thyristor.
More specifically, the switching transistor Q2 is a PNP transistor.
Fig. 3 is a schematic circuit diagram of an embodiment of fig. 2. As shown in fig. 3, the positive electrode of the power supply V1 is connected to the anode of the switching tube Q1 through a resistor R1, the cathode of the switching tube Q1 is connected to the first end of the TBU device, the positive electrode of the power supply V2 is connected to the first end of the TBU device, the negative electrode of the power supply V1 is grounded, the second end of the TBU device is grounded, the first end of the capacitor C1 is connected to the anode of the switching tube Q1, the second end of the capacitor C1 is grounded, the gate of the switching tube Q1 is connected to the cathode of the diode D1, the anode of the diode D1 is connected to the collector of the switching tube Q2 through a resistor R2, the collector of the switching tube Q2 is grounded through a resistor R3, the emitter of the switching tube Q2 is connected to the auxiliary power supply Vcc, the first end of the resistor R4 is connected to the auxiliary power supply Vcc, the second end of the resistor R4 is connected to the base of the switching tube Q2, the second end of the resistor R4 is connected to the first end of the resistor R5, the second end of the resistor R5 is connected to the second end of the resistor P1, and the signal generator is not shown in the signal generator (fig. P1).
More specifically, the power source V1 is a low voltage power source.
More specifically, the power source V2 is a high-voltage power source.
More specifically, the switching tube Q1 is a thyristor.
More specifically, the switching transistor Q2 is a PNP transistor.
More specifically, the value of the power supply V1 is 5V; the value of the power supply V2 is 850V; the auxiliary power supply Vcc has a value of 12V; the TTL level signal has a high level of 10V, a low level of 0V, a period of 2s, and a duty ratio of 50%.
Alternatively, power supply V2 is generated by a power supply of model Keithley 2657A.
The working principle of the invention will be described with reference to fig. 3. The power supply V1 charges the capacitor C1 through the resistor R1, and after a period of charging, the voltage at two ends of the capacitor C1 is V3, wherein the voltage V3 is 5V.
When TTL level signal output by the signal generator is low, the switch tube Q2 is conducted, the auxiliary power supply Vcc supplies power to the GK pin of the switch tube Q1 through the resistor R2 and the diode D1, and when the GK voltage V of the switch tube Q1 is higher than the GK voltage V of the switch tube GK Reaching the threshold voltage V GK-th During the time, the switch tube Q1 is conducted, the capacitor C1 discharges through the TBU device to provide a current for the TBU device, so that the TBU device is converted from a large current stage S1 to a small current stage S2, at the moment, the voltage at two ends of the TBU device can reach a set high voltage V4 under the action of the power supply V2, wherein the high voltage V4 is 850V, the leakage current of the TBU device can be read through the power supply V2, and the leakage test of the TBU device under high voltage is realized.
When the TTL level signal output by the signal generator is high, the switching tube Q2 is turned off, the switching tube Q1 is turned off, and the voltage at two ends of the TBU device is limited to be V5, wherein the voltage V5 is smaller than the high voltage V4, that is, the TBU device is not always under the high voltage V4, so that the TBU device is protected.
It should be noted that the value of the power supply V1 should satisfy the following condition, and the power supply V1 should enable the current discharged by the capacitor C1 to make the TBU device enter the low current phase S2 after the capacitor C1 is charged.
Although the present invention has been described with reference to the above embodiments, it should be understood that the invention is not limited thereto, but rather is capable of modification and variation without departing from the spirit and scope of the present invention.
Claims (10)
1. The utility model provides a leak test circuit of TBU device under high pressure, its characterized in that includes first power, second power, first electric capacity, first switch tube and second switch tube, the positive pole of first power is connected the positive pole of first switch tube, the first end of TBU device is connected to the negative pole of first switch tube, the positive pole of second power is connected the first end of TBU device, the negative pole ground of first power, the second ground of TBU device, the negative pole ground of second power, first electric capacity is in parallel at first power both ends, the collector of second switch tube is connected to the gate of first switch tube, the collector ground of second switch tube, the third power is connected to the emitter of second switch tube, the first port is connected to the base of second switch tube, TTL level signal is connected to the first port.
2. The leakage testing circuit for a TBU device at high voltage as recited in claim 1, wherein a voltage of said first power supply is less than a voltage of said second power supply.
3. The leakage testing circuit of claim 2, further comprising a first diode, wherein a cathode of the first diode is connected to a gate of the first switching tube, and an anode of the first diode is connected to a collector of the second switching tube.
4. A leakage testing circuit for a TBU device under high voltage as defined in claim 3, further comprising a first resistor, a first end of said first resistor being connected to the positive pole of said first power supply, and a second end of said first resistor being connected to the anode of said first switching tube.
5. The leakage testing circuit for a TBU device under high voltage as recited in claim 4, further comprising a second resistor, a first terminal of said second resistor being connected to an anode of said first diode, and a second terminal of said second resistor being connected to a collector of said second switching tube.
6. The leakage testing circuit of a TBU device under high voltage as recited in claim 5 further comprising a third resistor, a first terminal of said third resistor connected to a collector of said second switching tube, a second terminal of said third resistor connected to ground.
7. The leakage testing circuit of claim 6, further comprising a fourth resistor, wherein a first terminal of the fourth resistor is connected to the third power supply, and a second terminal of the fourth resistor is connected to the base of the second switching tube.
8. The leakage testing circuit of claim 7, further comprising a fifth resistor, a first terminal of the fifth resistor connected to the second terminal of the fourth resistor, and a second terminal of the fifth resistor connected to the first port.
9. The leakage testing circuit of claim 1, wherein said first switching tube is a thyristor.
10. The leakage testing circuit of claim 1, wherein the second switching transistor is a PNP transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310823756.5A CN116540148B (en) | 2023-07-06 | 2023-07-06 | Leakage test circuit of TBU device under high pressure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310823756.5A CN116540148B (en) | 2023-07-06 | 2023-07-06 | Leakage test circuit of TBU device under high pressure |
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| CN116540148A true CN116540148A (en) | 2023-08-04 |
| CN116540148B CN116540148B (en) | 2023-09-05 |
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| CN202310823756.5A Active CN116540148B (en) | 2023-07-06 | 2023-07-06 | Leakage test circuit of TBU device under high pressure |
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|---|---|---|---|---|
| US20090122456A1 (en) * | 2007-09-10 | 2009-05-14 | Morrish Andrew J | Common gate connected high voltage transient blocking unit |
| CN101939890A (en) * | 2008-02-11 | 2011-01-05 | 柏恩氏股份有限公司 | Transient blocking unit using normally-off device to detect current trip threshold |
| CN202854263U (en) * | 2012-08-29 | 2013-04-03 | 成都酷玩网络科技有限公司 | Simple capacitance electric leakage detector |
| CN103176093A (en) * | 2011-12-23 | 2013-06-26 | 海洋王照明科技股份有限公司 | Leakage detection circuit |
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| US20090122456A1 (en) * | 2007-09-10 | 2009-05-14 | Morrish Andrew J | Common gate connected high voltage transient blocking unit |
| CN101939890A (en) * | 2008-02-11 | 2011-01-05 | 柏恩氏股份有限公司 | Transient blocking unit using normally-off device to detect current trip threshold |
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| CN202854263U (en) * | 2012-08-29 | 2013-04-03 | 成都酷玩网络科技有限公司 | Simple capacitance electric leakage detector |
| CN204391679U (en) * | 2015-01-29 | 2015-06-10 | 广东易事特电源股份有限公司 | A kind of leakage current detection protection circuit |
| WO2016179749A1 (en) * | 2015-05-08 | 2016-11-17 | 华为技术有限公司 | Leakage current testing circuit and method |
| CN106921154A (en) * | 2017-03-08 | 2017-07-04 | 深圳市千行电子有限公司 | A kind of current-limiting type piezo-resistance |
| US20210190834A1 (en) * | 2017-08-29 | 2021-06-24 | Koa Corporation | Current measurement device |
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| CN116540148B (en) | 2023-09-05 |
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Address after: Room 1501-1504, Building 1, Yunmicheng, 19 Ningshuang Road, Yuhuatai District, Nanjing, Jiangsu Province, 210012 Patentee after: Jiangsu Zhanxin Semiconductor Technology Co.,Ltd. Address before: Room 1501-1504, Building 1, Yunmicheng, 19 Ningshuang Road, Yuhuatai District, Nanjing, Jiangsu Province, 210012 Patentee before: JIANGSU ZHANXIN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
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