CN116526289A - Structure for realizing line width narrowing of blue light semiconductor laser - Google Patents
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Abstract
本发明公开了一种实现蓝光半导体激光线宽窄化的结构，属于半导体激光技术领域，解决了现有技术中VBG有效厚度小、存在激光自激射问题、线宽窄化效果差的问题，包括同轴依次设置的蓝光半导体激光器、快轴准直镜、慢轴准直镜、第一体布拉格光栅以及第二体布拉格光栅，第一体布拉格光栅对激光进行第一次线宽窄化并锁定，第二体布拉格光栅衍射波长与第一次线宽锁定后的波长相匹配，第二体布拉格光栅与第一体布拉格光栅的距离为1～3mm。本发明通过设置双体布拉格光栅的结构，有效解决因体布拉格光栅自身工艺而难以实现大厚度的问题，过滤次峰的影响，有效解决激光自激射问题，优化半导体激光的光谱特性，实现激光线宽的进一步窄化。
The invention discloses a structure for realizing line width narrowing of a blue light semiconductor laser, which belongs to the technical field of semiconductor lasers and solves the problems of small VBG effective thickness, laser self-excitation problem, and poor line width narrowing effect in the prior art, including the same A blue light semiconductor laser, a fast-axis collimator, a slow-axis collimator, a first volume Bragg grating and a second volume Bragg grating are arranged in sequence, and the first volume Bragg grating narrows and locks the laser line width for the first time. The diffraction wavelength of the two-volume Bragg grating matches the wavelength after the first linewidth locking, and the distance between the second volume Bragg grating and the first volume Bragg grating is 1-3 mm. The present invention effectively solves the problem that it is difficult to achieve a large thickness due to the process of the volume Bragg grating itself by setting the structure of the double-body Bragg grating, filters the influence of the sub-peak, effectively solves the problem of laser self-excitation, optimizes the spectral characteristics of the semiconductor laser, and realizes the laser Further narrowing of the line width.
Description
技术领域technical field
本发明属于半导体激光技术领域，具体地说，尤其涉及一种实现蓝光半导体激光线宽窄化的结构。The invention belongs to the technical field of semiconductor lasers, and in particular relates to a structure for realizing line width narrowing of blue semiconductor lasers.
背景技术Background technique
高功率蓝光半导体激光器可以作为RGB激光显示光源之一，与红光、绿光合束产生白光，应用于激光显示领域。以激光作为显示光源，优点是色域范围广、寿命长、光能利用率极高、节能环保等。此外，在激光加工领域，采用1064nm的光纤激光进行有色金属如金、铜等切割、焊接、熔覆、3D打印，由于该类高反射率材料对近红外光吸收效率低，因此极易产生飞溅、球化、焊缝成型较差等问题，而蓝光激光吸收效率高，因此可采用蓝光代替传统近红外激光用于有色金属激光加工。High-power blue semiconductor lasers can be used as one of the light sources for RGB laser display, combining with red light and green light to generate white light, which is used in the field of laser display. Using laser as the display light source has the advantages of wide color gamut, long life, high light energy utilization rate, energy saving and environmental protection, etc. In addition, in the field of laser processing, 1064nm fiber lasers are used for cutting, welding, cladding, and 3D printing of non-ferrous metals such as gold and copper. Due to the low absorption efficiency of such high-reflectivity materials for near-infrared light, it is easy to generate spatter , spheroidization, poor weld formation and other problems, and blue light laser absorption efficiency is high, so blue light can be used instead of traditional near-infrared laser for non-ferrous metal laser processing.
但是，自由运转的蓝光半导体激光器光谱线宽通常在3～5nm，较宽的光谱宽度会影响激光显示以及激光加工的效果，故需要通过技术手段压窄蓝光半导体激光的光谱线宽。However, the spectral linewidth of a free-running blue semiconductor laser is usually 3-5nm, and a wider spectral width will affect the effect of laser display and laser processing, so it is necessary to narrow the spectral linewidth of the blue semiconductor laser through technical means.
前腔面增透的蓝光半导体激光芯片提供增益介质和谐振腔的后腔面，体布拉格光栅(VBG)作为谐振腔的前腔面，在电激励的作用下实现粒子数反转，将VBG反馈光作为种子光，经谐振腔放大从而形成窄线宽激光输出，利用VBG实现单路调节，因此对蓝光半导体激光单元器件的发光一致性要求较低，同时VBG的波长选择特性使半导体激光谐振在VBG衍射波长，从而实现半导体激光波长的筛选和线宽窄化。The anti-reflective blue semiconductor laser chip on the front cavity surface provides the gain medium and the back cavity surface of the resonator, and the volume Bragg grating (VBG) is used as the front cavity surface of the resonator. As the seed light, the light is amplified by the resonator to form a narrow linewidth laser output, and the VBG is used to realize single-channel adjustment. Therefore, the requirements for the uniformity of light emission of the blue semiconductor laser unit device are relatively low. At the same time, the wavelength selection characteristics of the VBG make the semiconductor laser resonate in the VBG diffracts the wavelength, thereby realizing the screening of semiconductor laser wavelength and narrowing of line width.
本发明基于体布拉格光栅外腔反馈技术，提出一种实现蓝光半导体激光线宽进一步窄化的结构。Based on the volume Bragg grating external cavity feedback technology, the invention proposes a structure for further narrowing the line width of the blue semiconductor laser.
发明内容Contents of the invention
本发明的目的是针对现有技术存在的不足，提供了一种增大VBG有效厚度、解决激光自激射问题、线宽进一步窄化的实现蓝光半导体激光线宽窄化的结构。The object of the present invention is to address the deficiencies in the prior art and provide a structure that increases the effective thickness of the VBG, solves the problem of laser self-excitation, and further narrows the line width to realize the narrowing of the line width of the blue light semiconductor laser.
为了实现上述技术目的，本发明实现蓝光半导体激光线宽窄化的结构采用的技术方案为：In order to achieve the above-mentioned technical purpose, the technical scheme adopted by the present invention to realize the narrowing structure of the blue light semiconductor laser line width is:
一种实现蓝光半导体激光线宽窄化的结构，包括同轴依次设置的蓝光半导体激光器、快轴准直镜、慢轴准直镜、第一体布拉格光栅以及第二体布拉格光栅，所述快轴准直镜对快轴方向的激光发散角进行准直，所述慢轴准直镜对慢轴方向的激光发散角进行准直，所述第一体布拉格光栅对激光进行第一次线宽窄化并锁定，所述第二体布拉格光栅衍射波长与第一次线宽锁定后的波长相匹配，所述第二体布拉格光栅与第一体布拉格光栅的距离为1～3mm。A structure for narrowing the line width of a blue semiconductor laser, comprising a blue semiconductor laser coaxially arranged in sequence, a fast axis collimator, a slow axis collimator, a first volume Bragg grating and a second volume Bragg grating, the fast axis The collimating mirror collimates the laser divergence angle in the fast axis direction, the slow axis collimating mirror collimates the laser divergence angle in the slow axis direction, and the first volume Bragg grating narrows the laser line width for the first time and locked, the diffraction wavelength of the second volume Bragg grating matches the wavelength after the line width is locked for the first time, and the distance between the second volume Bragg grating and the first volume Bragg grating is 1-3mm.
优选的，所述蓝光半导体激光器前腔面为增透型。Preferably, the front cavity surface of the blue semiconductor laser is anti-reflection type.
优选的，所述第一体布拉格光栅沿出光方向设置于慢轴准直镜右侧1～5mm。Preferably, the first volume Bragg grating is arranged 1-5 mm to the right of the slow-axis collimator along the light emitting direction.
优选的，所述第一体布拉格光栅的衍射效率为10±3％，所述第二体布拉格光栅的衍射效率为10±3％。Preferably, the diffraction efficiency of the first volume Bragg grating is 10±3%, and the diffraction efficiency of the second volume Bragg grating is 10±3%.
与现有技术相比，本发明的有益效果是：Compared with prior art, the beneficial effect of the present invention is:
本发明通过设置双体布拉格光栅的结构，有效解决因体布拉格光栅自身工艺而难以实现大厚度，进而导致高功率半导体激光线宽窄化效果下降的问题；利用第一体布拉格光栅进行外腔反馈，使光谱线宽变窄的同时中心波长与第一体布拉格光栅衍射波长相近，初步锁定激光，降低红移现象对外腔反馈后的激光中心波长的影响；通过两个体布拉格光栅的外腔反馈，过滤次峰的影响，有效解决激光自激射问题，优化半导体激光的光谱特性，实现激光线宽的进一步窄化。The present invention effectively solves the problem that it is difficult to achieve a large thickness due to the technology of the volume Bragg grating itself by setting the structure of the double-body Bragg grating, which in turn leads to the decline of the line width narrowing effect of the high-power semiconductor laser; the external cavity feedback is performed by using the first volume Bragg grating, While narrowing the spectral line width, the central wavelength is similar to the first volume Bragg grating diffraction wavelength, which preliminarily locks the laser and reduces the influence of the red shift phenomenon on the laser central wavelength after external cavity feedback; through the external cavity feedback of two volume Bragg gratings, the filter The impact of the sub-peak effectively solves the problem of laser self-excitation, optimizes the spectral characteristics of semiconductor lasers, and realizes further narrowing of the laser linewidth.
附图说明Description of drawings
图1是现有技术的结构示意图；Fig. 1 is the structural representation of prior art;
图2是本发明的结构示意图。Fig. 2 is a structural schematic diagram of the present invention.
图中：1.蓝光半导体激光器；2.快轴准直镜；3.慢轴准直镜；4.第一体布拉格光栅；5.第二体布拉格光栅。In the figure: 1. Blue semiconductor laser; 2. Fast axis collimator; 3. Slow axis collimator; 4. First volume Bragg grating; 5. Second volume Bragg grating.
具体实施方式Detailed ways
下面结合附图和具体实施方式，对发明进一步说明：Below in conjunction with accompanying drawing and specific embodiment, the invention is further described:
如图1所示，现有技术中实现蓝光半导体激光线宽窄化的结构包括按序同轴设置的蓝光半导体激光器、快轴准直镜、慢轴准直镜以及体布拉格光栅，该蓝光半导体激光器内的激光芯片发出激光后经快轴准直镜和慢轴准直镜压缩整形，使半导体激光发散角压缩到mrad量级，由于体布拉格光栅(VBG)具有角度选择性，入射光发散角越小，衍射效果越好，越有利于线宽的压窄，整形后的激光入射到VBG上，半导体激光器与VBG构成外腔结构，从而实现光谱线宽窄化。As shown in Figure 1, the prior art structure for narrowing the line width of blue semiconductor lasers includes blue semiconductor lasers, fast-axis collimator mirrors, slow-axis collimator mirrors, and volume Bragg gratings arranged coaxially in sequence. After the laser chip in the laser emits laser light, it is compressed and shaped by the fast-axis collimator mirror and the slow-axis collimator mirror, so that the divergence angle of the semiconductor laser can be compressed to the order of mrad. Smaller, the better the diffraction effect, the more conducive to the narrowing of the line width, the shaped laser is incident on the VBG, and the semiconductor laser and the VBG form an external cavity structure, thereby realizing the narrowing of the spectral line width.
对于厚度为d的VBG，其理想窄化光谱线宽窄化可以表示为：For a VBG with thickness d, its ideal narrowing spectrum linewidth narrowing can be expressed as:
ΔλFWHM＝0.3(λB)2/d，Δλ FWHM = 0.3(λ B ) 2 /d,
其中，ΔλFWHM表示锁定后的光谱宽度，λB表示VBG衍射波长，d表示VBG厚度。Among them, Δλ FWHM represents the spectral width after locking, λ B represents the VBG diffraction wavelength, and d represents the VBG thickness.
由此可见，当VBG厚度越大，压窄后线宽越窄，但现有技术受VBG材料加工和光栅设计加工技术的限制，令VBG厚度通常为1～3mm，而更大厚度的VBG无论从技术角度亦或是成本角度和常规VBG相比均显著提高，难以推广应用，其次，自由运转的半导体激光器中心波长随电流的注入会产生“红移”现象，即波长向长波长方向移动。VBG的衍射波长通常选择好后，虽然电流注入变化较小，但不同电流下半导体激光中心波长和VBG衍射波长之间的差距不同，激光中心波长越接近VBG衍射波长，锁定效果越好，即只有一个窄线宽的主峰，没有其它次峰的影响，当两者相差较大时，半导体激光自激射效果严重，次峰较为明显，影响最终的线宽窄化效果。It can be seen that the thicker the VBG is, the narrower the line width will be after narrowing. However, the existing technology is limited by VBG material processing and grating design and processing technology, so that the thickness of VBG is usually 1-3 mm, and the VBG with a larger thickness is no matter Compared with conventional VBG, it is significantly improved from a technical point of view or a cost point of view, and it is difficult to popularize and apply. Secondly, the center wavelength of a free-running semiconductor laser will produce a "red shift" phenomenon with the injection of current, that is, the wavelength moves to the long wavelength direction. After the VBG diffraction wavelength is usually selected, although the current injection changes little, the gap between the center wavelength of the semiconductor laser and the VBG diffraction wavelength is different under different currents. The closer the laser center wavelength is to the VBG diffraction wavelength, the better the locking effect, that is, only A main peak with a narrow line width has no influence from other secondary peaks. When the difference between the two is large, the self-excitation effect of the semiconductor laser is serious, and the secondary peak is more obvious, which affects the final line width narrowing effect.
如图2所示，一种实现蓝光半导体激光线宽窄化的结构，包括同轴依次设置的蓝光半导体激光器1、快轴准直镜2、慢轴准直镜3、第一体布拉格光栅4以及第二体布拉格光栅5，所述蓝光半导体激光器1前腔面为增透型，所述快轴准直镜2对快轴方向的激光发散角进行准直，所述慢轴准直镜3对慢轴方向的激光发散角进行准直，所述第一体布拉格光栅4对激光进行第一次线宽窄化并锁定，所述第二体布拉格光栅5衍射波长与第一次线宽锁定后的波长相匹配，所述第二体布拉格光栅5与第一体布拉格光栅4的距离为1～3mm，所述第一体布拉格光栅4沿出光方向设置于慢轴准直镜右侧1～5mm。As shown in Figure 2, a structure for realizing the narrowing of the blue light semiconductor laser line width includes a blue light semiconductor laser 1, a fast axis collimator mirror 2, a slow axis collimator mirror 3, a first volume Bragg grating 4 and The second volume Bragg grating 5, the front cavity surface of the blue light semiconductor laser 1 is an anti-reflection type, the fast axis collimating mirror 2 collimates the laser divergence angle in the fast axis direction, and the slow axis collimating mirror 3 pairs The divergence angle of the laser light in the direction of the slow axis is collimated, the first volume Bragg grating 4 narrows and locks the laser line width for the first time, and the second volume Bragg grating 5 diffracts the wavelength after the first line width locking. The wavelengths are matched, the distance between the second volume Bragg grating 5 and the first volume Bragg grating 4 is 1-3 mm, and the first volume Bragg grating 4 is arranged 1-5 mm on the right side of the slow axis collimator along the light emitting direction.
本发明中，所述第一体布拉格光栅4的衍射效率为10±3％，所述第二体布拉格光栅5的衍射效率为10±3％。In the present invention, the diffraction efficiency of the first volume Bragg grating 4 is 10±3%, and the diffraction efficiency of the second volume Bragg grating 5 is 10±3%.
本发明中蓝光半导体激光器1前腔面增透后，激光芯片提供增益介质和谐振腔的后腔面，激光先后通过快轴准直镜2和慢轴准直镜3，分别对快轴和慢轴两个方向的激光发散角进行准直，准直后可将发散角压缩到mrad量级，第一体布拉格光栅4作为谐振腔的前腔面，在电激励的作用下实现粒子数反转，将第一体布拉格光栅4反馈光作为种子光，经谐振腔放大从而令准直后的激光形成窄线宽激光输出，窄化后的激光虽然在不同工作电流下依然存在自激射现象和次峰影响，但此时主要的激光功率均集中在主峰上，不同工作电流下，线宽窄化后的激光中心波长均在第一体布拉格光栅4衍射波长附近，半导体激光自身产生的红移现象对第一体布拉格光栅4外腔反馈后的激光中心波长影响较小，初步锁定后的激光，再通过第二体布拉格光栅5进行第二次外腔反馈，此时的入射激光中心波长和光谱线宽经过第一体布拉格光栅4初次锁定后均得到有效控制，光谱线宽窄同时中心波长和第一体布拉格光栅4衍射波长接近，此时的入射激光再经过第二体布拉格光栅5进行第二次外腔反馈，可以有效过滤次峰的影响；同时，双体布拉格光栅的结构增加了光栅的有效厚度，使体布拉格光栅因自身工艺而无法提供单片大厚度的问题得以解决，进而使激光线宽进一步窄化。After the antireflection of the front cavity surface of the blue light semiconductor laser 1 in the present invention, the laser chip provides the gain medium and the rear cavity surface of the resonant cavity, and the laser passes through the fast axis collimator mirror 2 and the slow axis collimator mirror 3 successively, respectively for the fast axis and slow axis collimator mirrors. The divergence angle of the laser beam in both directions of the axis is collimated, and the divergence angle can be compressed to the mrad level after collimation. The first volume Bragg grating 4 is used as the front cavity surface of the resonator, and the number of particles is reversed under the action of electric excitation. , the feedback light of the first volume Bragg grating 4 is used as the seed light, which is amplified by the resonator so that the collimated laser can form a narrow linewidth laser output. Although the narrowed laser still has self-excitation phenomenon and Influenced by the secondary peak, but at this time the main laser power is concentrated on the main peak. Under different operating currents, the laser center wavelength after narrowing the line width is near the diffraction wavelength of the first volume Bragg grating 4, and the red shift phenomenon produced by the semiconductor laser itself The influence on the central wavelength of the laser after the external cavity feedback of the first volume Bragg grating 4 is small, and the laser after the initial locking is carried out through the second external cavity feedback through the second volume Bragg grating 5. At this time, the central wavelength and spectrum of the incident laser The line width is effectively controlled after being initially locked by the first volume Bragg grating 4. The spectral line width is narrow and the central wavelength is close to the diffraction wavelength of the first volume Bragg grating 4. At this time, the incident laser light passes through the second volume Bragg grating 5 for a second The sub-external cavity feedback can effectively filter the influence of the sub-peak; at the same time, the structure of the double-body Bragg grating increases the effective thickness of the grating, which solves the problem that the volume Bragg grating cannot provide a single-chip large thickness due to its own process, and thus enables the laser The line width is further narrowed.
实施例1Example 1
一种实现蓝光半导体激光线宽窄化的结构，包括同轴依次设置的蓝光半导体激光器、快轴准直镜、慢轴准直镜、第一体布拉格光栅以及第二体布拉格光栅，所述蓝光半导体激光器前腔面为增透型，所述快轴准直镜对快轴方向的激光发散角进行准直，所述慢轴准直镜对慢轴方向的激光发散角进行准直，所述第一体布拉格光栅对激光进行第一次线宽窄化并锁定，所述第二体布拉格光栅衍射波长与第一次线宽锁定后的波长相匹配，所述第二体布拉格光栅与第一体布拉格光栅的距离为1～3mm，所述第一体布拉格光栅沿出光方向设置于慢轴准直镜右侧1～5mm。A structure for narrowing the line width of a blue semiconductor laser, comprising a blue semiconductor laser coaxially arranged in sequence, a fast axis collimator, a slow axis collimator, a first volume Bragg grating and a second volume Bragg grating, the blue semiconductor The front cavity surface of the laser is anti-reflection type, the fast axis collimating mirror collimates the laser divergence angle in the fast axis direction, the slow axis collimating mirror collimates the laser divergence angle in the slow axis direction, and the first The integrated Bragg grating narrows and locks the laser linewidth for the first time, the diffraction wavelength of the second volume Bragg grating matches the wavelength after the first linewidth locking, and the second volume Bragg grating and the first volume Bragg grating The distance between the gratings is 1-3 mm, and the first volume Bragg grating is arranged 1-5 mm to the right of the slow-axis collimating mirror along the light emitting direction.
具体的，以激光波长450nm，单元功率5W的蓝光半导体激光器输出光传播为例，输出激光经发散角为50°的快轴准直镜和发散角为10°的慢轴准直镜准直后，快慢轴发散角均小于6mrad，由于体布拉格光栅存在角度选择性，入射激光发散角越小，反馈效率越高，因此，沿着出光方向将第一体布拉格光栅放置于慢轴准直镜右侧1～5mm处进行第一次线宽窄化，第一体布拉格光栅的衍射效率为10±3％，衍射波长为449.9±0.1nm，厚度1mm，利用第一体布拉格光栅对激光中心波长以及光谱线宽进行初步优化。接着，经初步优化后的激光通过第二体布拉格光栅进行第二次外腔反馈，第二体布拉格光栅的衍射效率为10±3％，衍射波长和第一次线宽锁定后波长匹配，即若第一次锁定后中心波长为449.950nm，则第二体布拉格光栅的衍射波长应为449.950±0.01nm，厚度为3mm，第二体布拉格光栅与第一体布拉格光栅的最佳距离为1～3mm。通过双体布拉格光栅外腔结构，不仅可以过滤掉次峰的影响，而且该双体布拉格光栅形成的有效厚度为4mm，有利于激光线宽的进一步窄化。Specifically, taking the output light propagation of a blue semiconductor laser with a laser wavelength of 450nm and a unit power of 5W as an example, the output laser is collimated by a fast-axis collimator with a divergence angle of 50° and a slow-axis collimator with a divergence angle of 10° , the divergence angles of the fast and slow axes are both less than 6mrad. Due to the angle selectivity of the volume Bragg grating, the smaller the divergence angle of the incident laser light, the higher the feedback efficiency. Therefore, the first volume Bragg grating is placed on the right side of the slow axis collimator along the light output direction The first line width narrowing is carried out at the side 1-5mm, the diffraction efficiency of the first volume Bragg grating is 10±3%, the diffraction wavelength is 449.9±0.1nm, and the thickness is 1mm. Preliminary optimization of line width. Then, the preliminarily optimized laser passes through the second volume Bragg grating for the second external cavity feedback, the diffraction efficiency of the second volume Bragg grating is 10±3%, and the diffraction wavelength matches the wavelength after the first linewidth locking, that is If the central wavelength is 449.950nm after the first locking, the diffraction wavelength of the second volume Bragg grating should be 449.950±0.01nm, the thickness is 3mm, and the optimal distance between the second volume Bragg grating and the first volume Bragg grating is 1~ 3mm. Through the double-body Bragg grating external cavity structure, not only can filter out the influence of the secondary peak, but also the effective thickness of the double-body Bragg grating is 4 mm, which is beneficial to further narrowing the laser line width.
综上，仅为本发明的较佳实施例而已，并非用来限定本发明实施的范围，凡依本发明权利要求范围的形状、构造、特征及精神所为的均等变化与修饰，均应包括于本发明的权利要求范围内。In summary, it is only a preferred embodiment of the present invention, and is not used to limit the scope of the present invention. All equivalent changes and modifications made in accordance with the shape, structure, characteristics and spirit of the scope of the claims of the present invention shall include within the scope of the claims of the present invention.
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