CN205666431U - Wavelength locking semiconductor laser - Google Patents
Wavelength locking semiconductor laser Download PDFInfo
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- CN205666431U CN205666431U CN201620499372.8U CN201620499372U CN205666431U CN 205666431 U CN205666431 U CN 205666431U CN 201620499372 U CN201620499372 U CN 201620499372U CN 205666431 U CN205666431 U CN 205666431U
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Abstract
The utility model discloses a wavelength locking semiconductor laser, the bragg grating of will personally experiencing sth. Part of the body place in the output end face of the laser instrument outside or terminal surface outside collimation focusing lens's back, and when outgoing laser is propagated in VBG, the light that only satisfies the bragg diffraction condition could reflect and go back, the enlarged formation laser of the interior resonant cavity of process LD light source, and the output wavelength of laser instrument is just locked on this prague wavelength. VBG can be used for locking the single tube and be clung to the sharp light wavelength of strip, and realization semiconductor laser's wavelength locking, angle selection, power locking and reduced power loses, reduces the thermal drift of wavelength. This design has compact structure, and the power loss is low, advantages such as temperature stability height. VBG adds optical isolator at the back in the light path simultaneously, can prevent that the return light of output from disturbing laser, prevents that fiber laser or solid laser from transmitting stable work and damage seed laser that light disturbed the laser instrument dorsad.
Description
Technical field
This utility model relates to semiconductor laser field, is specifically related to a kind of wavelength locking semiconductor laser
Device, can export or be coupled into optical fiber output with free space.
Background technology
High light beam quality, high-power semiconductor laser and fiber coupling system thereof are solid-state laser, materials processing, doctor
The fields such as and instrument and equipment are widely used.At present, common semiconductor laser is to be tied by conventional method Fabry-Perot-type cavity
The direct coupled into optical fibres of laser of structure, owing to there is substantial amounts of zlasing mode in Fabry-Perot-type cavity, breadth of spectrum line exceedes several
Nanometer, semiconductor laser spectrum can produce large change with the change of temperature and operating current simultaneously.Generally along with laser instrument
Driving electric current increase, emission spectrum broadens；Temperature increases, and launches wavelength and red shift can occur, and this directly affects and uses such
The laser instrument optical fiber laser as seed source or the reliable and stable work of solid state laser.
Utility model content
In order to solve above-mentioned technical problem, the utility model proposes a kind of wavelength locking semiconductor laser, half can be realized
The wavelength locking of conductor laser, angle Selection and power blockage, and it is possible to prevent the light echo interference laser of outfan, prevent
Optical fiber laser or solid state laser transmit steady operation and damage seed laser, this practicality of light interference laser dorsad
Novel have compact conformation, and power attenuation is low, temperature stability advantages of higher.
The technical solution of the utility model is achieved in that
A kind of wavelength locking semiconductor laser, including LD light source, for lock described LD light source output light wavelength and
Power, the wavelength locking assembly of the spectral width that simultaneously narrows, for hindering this semiconductor laser outfan light echo to disturb laser
Optoisolator and for be coupled into optical fiber output or the condenser lens of free space coupling Output of laser.
Further, described wavelength locking assembly includes collimation lens set and Volume Bragg grating, the light of LD light source output
After described collimation lens set collimates, inciding in described Volume Bragg grating, described Volume Bragg grating makes to meet Bradley
The light generation frequency-selecting reflection of lattice diffraction conditions wavelength, forms reflected beam portion and transmission light part, and transmission light part directly exports
Outside LD resonator cavity, reflected beam portion returns in LD resonator cavity along original optical path, again amplifies through LD resonator cavity, then through body cloth
It is output as the laser of specific wavelength and power after glug grating, after described optoisolator, described condenser lens is coupled into
Optical fiber output or the output of freedom of entry space.
Further, described collimation lens set is the combination of fast axis collimation mirror and slow axis collimating mirror, or is fast axis collimation
Mirror, or be aspherical focussing lens.
Further, to include that Volume Bragg grating and being plated on LD light source output end face has solid for described wavelength locking assembly
The anti-reflection film of standing wave length, the light of LD light source output penetrates after described anti-reflection film, incides in described Volume Bragg grating, institute
State Volume Bragg grating and make to meet the light generation frequency-selecting reflection of Bragg diffraction condition wavelength, form reflected beam portion and transmission light
Part, transmission light part directly exports after Volume Bragg grating, reflected beam portion LD light source and Volume Bragg grating it
Between be amplified, form the concussion of stable laser, then after Volume Bragg grating, be output as swashing of specific wavelength and power
Light, after described optoisolator, is coupled into optical fiber output or the output of freedom of entry space by described condenser lens.
Further, described wavelength locking assembly includes collimation lens set, Volume Bragg grating and is located at the output of LD light source
The illuminator of end face top and the bottom；The light of LD light source output, after described collimation lens set collimates, incides described body Bradley
In lattice grating, described Volume Bragg grating makes to meet the light generation frequency-selecting reflection of Bragg diffraction condition wavelength, forms reflection light
Part and transmission light part, transmission light part directly exports after Volume Bragg grating；Adjust the position of Volume Bragg grating
And angle, make reflected beam portion not return along original optical path, the collimated battery of lens of reflected beam portion focuses on a mirror, reflective
After mirror reflection, in secondary focusing to Volume Bragg grating, there is re-diffraction；Reflected beam portion after re-diffraction is humorous through LD
The chamber that shakes is amplified, then is output as the laser of specific wavelength and power after Volume Bragg grating；After described optoisolator, by described
Condenser lens is coupled into optical fiber output or the output of freedom of entry space.
Further, described optoisolator, by being located at before described condenser lens, replaces with after being located at described condenser lens
Face, the centre of output optical fibre.
Further, the wavelength locking of this semiconductor laser is 915nm, 980nm, 10xx nm, 15xx nm and 19xx
Nm, wherein, x is the numeral of 0-9.
Further, the additional photodetector having for monitoring light path of this semiconductor laser or/and additional have for
Control the semiconductor cooler of the temperature range of device.
Further, this semiconductor laser is single mode semiconductor laser or multimode semiconductor laser.
Further, this semiconductor laser is edge-emission hetero-junctions based semiconductor laser device or the face of VESCEL structure
Launching semiconductor laser.
The beneficial effects of the utility model are: this utility model provides a kind of wavelength locking semiconductor laser, will be by body
Bragg grating (VBG) is placed on outside the output end face of LD light source, when going out with the wavelength locking assembly of collimation lens set composition
Penetrating laser when propagating in VBG, the light only meeting Bragg diffraction condition could occur frequency-selecting to reflect, and forms reflected beam portion
With transmission light part, the direct transmission of transmission light part exports outside LD resonator cavity, and reflected beam portion returns LD light along original optical path
In the resonator cavity in source, through the amplification of LD resonator cavity, then after Volume Bragg grating, it is output as the laser of specific wavelength and power,
After described optoisolator, can export with free space or be coupled into optical fiber output by described condenser lens.So, laser
The output wavelength of device is locked on this bragg wavelength.VBG can be used to lock single tube and the wavelength of bar bar laser,
Realizing the wavelength locking of semiconductor laser, angle Selection and power blockage, this design has compact conformation, power attenuation
Low, temperature stability advantages of higher.Meanwhile, after VBG, add optoisolator in the optical path, be possible to prevent the light echo of outfan to do
Disturbing laser, the steady operation preventing optical fiber laser or solid state laser from transmitting light interference laser dorsad swashs with damage seed
Light device.Wavelength locking assembly can also be by Volume Bragg grating (VBG) be plated on LD light source output end face and have fixed wave length
Anti-reflection film composition, or by collimation lens set, Volume Bragg grating be located at the reflective of LD light source output end face top and the bottom
Mirror forms.
Accompanying drawing explanation
Fig. 1 is the structural representation of this utility model embodiment 1 wavelength locking semiconductor laser；
Fig. 2 is the structural representation of this utility model embodiment 2 wavelength locking semiconductor laser；
Fig. 3 is the structural representation of this utility model embodiment 3 wavelength locking semiconductor laser；
Fig. 4 is the structural representation of this utility model embodiment 4 wavelength locking semiconductor laser；
Fig. 5 is the structural representation of this utility model embodiment 5 wavelength locking semiconductor laser；
In conjunction with accompanying drawing, make the following instructions:
1 LD light source 2 optoisolator
3 condenser lens 4 collimation lens set
5 Volume Bragg grating 6 anti-reflection films
7 illuminator 8 optical fiber
FAC fast axis collimation mirror SAC slow axis collimating mirror
Detailed description of the invention
In order to be more clearly understood that technology contents of the present utility model, describe in detail especially exemplified by following example, its mesh
Be only that and be best understood from content of the present utility model and unrestricted protection domain of the present utility model.
Embodiment 1
As it is shown in figure 1, a kind of wavelength locking semiconductor laser, including LD light source 1 (have LD and heat sink), it is used for locking
The wavelength of light of described LD light source output and power, the wavelength locking assembly of the spectral width that simultaneously narrows, for hindering this partly to lead
Body laser outfan light echo disturbs the optoisolator 2 of laser and for coupling the condenser lens 3 of Output of laser.Described wavelength is locked
Determining assembly and include collimation lens set 4 and Volume Bragg grating 5 (VBG), collimation lens set is that fast axis collimation mirror (FAC) is accurate with slow axis
The combination of straight mirror (SAC)；The light of LD light source output is after fast axis collimation mirror (FAC) and slow axis collimating mirror (SAC) collimate, incident
In described Volume Bragg grating, described Volume Bragg grating makes the light generation frequency-selecting meeting Bragg diffraction condition wavelength anti-
Penetrating, form reflected beam portion and transmission light part, the direct transmission of transmission light part exports outside LD resonator cavity, reflected beam portion edge
In the resonator cavity that original optical path returns LD light source, amplify through LD resonator cavity, then after Volume Bragg grating, be output as certain wave
The long laser with power, after described optoisolator, is coupled into optical fiber output by described condenser lens.It is to say, when swashing
When light arrives VBG element, the only light in the range of specific wavelength bandwidth could be reflected, and by regulating the position of VBG, can make anti-
Penetrate light to return in LD resonator cavity along original optical path.Therefore, VBG here serves frequency-selecting and the effect of the spectrum that narrows.Optically isolated
Device hinders the light echo interference laser of outfan, the safety of protection semiconductor laser and job stability.
Embodiment 2
As in figure 2 it is shown, the present embodiment 2 comprises most of technical characteristic of embodiment 1, its difference is, described collimation is saturating
Mirror group is fast axis collimation mirror or aspherical focussing lens.
Embodiment 3
As it is shown on figure 3, the present embodiment 3 comprises most of technical characteristic of embodiment 1, its difference is, is not added with collimation thoroughly
Mirror group, plates the anti-reflection film 6 of one layer of fixed wave length on the output end face of LD light source, and its working method is:
The light that LD light source sends penetrates after anti-reflection film, destroys the interior resonance chamber of semiconductor laser, incides body
In Bragg grating (VBG).Only meet the light of Bragg diffraction condition wavelength, could be reflected, formed reflected beam portion and
Transmission light part, transmission light part is directly output to outside resonator cavity, and reflection light is amplified between LD light source and VBG, is formed
Stable laser concussion, is output as the laser of specific wavelength and power, after optoisolator, by described focusing after VBG
Lens Coupling enters optical fiber output, it is achieved wavelength and the locking of power, narrow spectral width.Optoisolator hinders outfan
Light echo interference laser, the safety of protection semiconductor laser and job stability.
Embodiment 4
As shown in Figure 4, the present embodiment 4 comprises most of technical characteristic of embodiment 1, and its difference is, at LD light source
Output end face top and the bottom are respectively plus illuminator 7, by adjusting the angle of VBG, it is achieved the wavelength of laser instrument and power blockage.
Its working method is:
The laser that LD light source sends, after collimation lens set collimates, incides in Volume Bragg grating (VBG), meets cloth
The light of glug diffraction conditions wavelength, will occur frequency-selecting to reflect, and forms reflected beam portion and transmission light part, adjusts the position of VBG
Put and angle, make reflected beam portion not return along original optical path, focus on illuminator 7 through collimation lens set, by illuminator
After reflection, in secondary focusing to VBG, there is re-diffraction.Reflection light after re-diffraction is put through LD light source internal resonator cavity
Big and after optoisolator, condenser lens coupled into optical fibres export, it is achieved wavelength and the locking of power, narrow spectral width
Degree.Re-diffraction achieves the autoregistration of light path.Optoisolator hinders the light echo interference laser of outfan, and protection quasiconductor swashs
The safety of light device and job stability.
Embodiment 5
As it is shown in figure 5, the present embodiment 5 comprises most of technical characteristic of embodiment 1, its difference is, optoisolator by
It is located at before described condenser lens, replaces with and be located at after described condenser lens, the centre of output optical fibre.
In the various embodiments described above, the wave-length coverage of laser instrument can be 915nm, 980nm, 10xx nm, 15xx nm and
19xx nm equiwavelength, x is the numeral of 0-9.
In the various embodiments described above, laser output is optical fiber coupling output, as optical fiber laser seed source；At other
In embodiment, it is also possible to Space Coupling exports, and independently uses as semiconductor laser.
In the various embodiments described above, output optical fibre can be the single-mode polarization maintaining fibers such as Hi1060, PM980, it is also possible to for multimode
Optical fiber.
In the various embodiments described above, laser works pattern can be continuous wave laser, it is also possible to for pulse laser.
In the various embodiments described above, laser instrument can be the hetero-junctions waveguide structure semi conductor laser instrument of edge-emission, it is possible to
Think the surface-emitting laser of VECSEL structure.
In the various embodiments described above, semiconductor laser can be single mode or multimode semiconductor laser.
In the various embodiments described above, additional photoelectric detector PD can monitor light path, can additional semiconductor cooler TEC controller
The temperature range of part, auxiliary improves the stability of laser instrument.
To sum up, in order to improve the stability of the output of semiconductor laser, this utility model is by putting outside laser cavity
Put optical grating element, make fraction of laser light be fed in laser active district, form a semiconductor laser with external optical feedback, Ke Yisuo
Standing wave length, narrow laser linewidth and improve laser stability.Volume Bragg grating (VBG) is directly placed at the defeated of laser instrument
Go out outside end face or outside end face after collimation focusing lens, when shoot laser is propagated in VBG, only meet Bradley
The light of lattice diffraction conditions just can reflect back, and the amplification through LD light source interior resonance chamber forms laser, the output wavelength of laser instrument
It is locked on this bragg wavelength.VBG can be used to lock single tube and the wavelength of bar bar laser, it is achieved quasiconductor swashs
The wavelength locking of light device, angle Selection, power blockage and the power loss that reduces, the thermal drift of reduction wavelength.This design has
Compact conformation, power loss is low, temperature stability advantages of higher.Simultaneously add optoisolator after VBG the most in the optical path, can in case
Only the light echo interference laser of outfan, prevents optical fiber laser or solid state laser from transmitting stablizing of light interference laser dorsad
Work and damage seed laser.
This utility model spectral width that narrows is 0.05nm-0.5nm, goes in frequency multiplication light path, and VBG can narrow
The LD light source video stretching when short pulse punching (less than 10ns) work.Extension equilibrium temperature scope is 0-200 DEG C, including device
Normal operating temperatures scope (-10 DEG C～50 DEG C).
Above example is referring to the drawings, is described in detail preferred embodiment of the present utility model.The skill of this area
Art personnel by carrying out the amendment on various forms or change to above-described embodiment, but without departing substantially from the feelings of essence of the present utility model
Under condition, all fall within protection domain of the present utility model.
Claims (10)
1. a wavelength locking semiconductor laser, it is characterised in that: include LD light source (1), to be used for locking described LD light source defeated
Go out wavelength and the power of light, the wavelength locking assembly of the spectral width that simultaneously narrows, for hindering this semiconductor laser outfan
The optoisolator (2) of light echo interference laser and saturating for being coupled into optical fiber output or the focusing of free space coupling Output of laser
Mirror (3).
Wavelength locking semiconductor laser the most according to claim 1, it is characterised in that: described wavelength locking assembly includes
Collimation lens set (4) and Volume Bragg grating (5), the light of LD light source output, after described collimation lens set collimates, incides
In described Volume Bragg grating, described Volume Bragg grating makes to meet the light generation frequency-selecting reflection of Bragg diffraction condition wavelength,
Forming reflected beam portion and transmission light part, transmission light part is directly output to outside LD resonator cavity, and reflected beam portion is along former light
Road returns in LD resonator cavity, again amplifies through LD resonator cavity, then is output as specific wavelength and power after Volume Bragg grating
Laser, after described optoisolator, by described condenser lens be coupled into optical fiber output or freedom of entry space output.
Wavelength locking semiconductor laser the most according to claim 2, it is characterised in that: described collimation lens set is fast axle
Collimating mirror (FAC) and the combination of slow axis collimating mirror (SAC), or be fast axis collimation mirror, or be aspherical focussing lens.
Wavelength locking semiconductor laser the most according to claim 1, it is characterised in that: described wavelength locking assembly includes
Volume Bragg grating and be plated in the anti-reflection film (6) on LD light source output end face with fixed wave length, the light of LD light source output passes through
Penetrating after described anti-reflection film, incide in described Volume Bragg grating, described Volume Bragg grating makes to meet Bragg diffraction bar
The light generation frequency-selecting reflection of part wavelength, forms reflected beam portion and transmission light part, and transmission light part is through Volume Bragg grating
Rear directly output, reflected beam portion is amplified between LD light source and Volume Bragg grating, forms stable laser concussion, then
After Volume Bragg grating, it is output as the laser of specific wavelength and power, after described optoisolator, by described condenser lens
It is coupled into optical fiber output or the output of freedom of entry space.
Wavelength locking semiconductor laser the most according to claim 1, it is characterised in that: described wavelength locking assembly includes
Collimation lens set, Volume Bragg grating and be located at the illuminator (7) of LD light source output end face top and the bottom；The light of LD light source output
After described collimation lens set collimates, inciding in described Volume Bragg grating, described Volume Bragg grating makes to meet Bradley
The light generation frequency-selecting reflection of lattice diffraction conditions wavelength, forms reflected beam portion and transmission light part, and transmission light part is through body cloth
Directly export after glug grating；Adjust position and the angle of Volume Bragg grating, make reflected beam portion not return along original optical path, instead
Penetrate the collimated battery of lens of light part to focus on a mirror, after mirror reflection, in secondary focusing to Volume Bragg grating, send out
Raw re-diffraction；Reflected beam portion after re-diffraction amplifies through LD resonator cavity, then is output as spy after Volume Bragg grating
Standing wave length and the laser of power；After described optoisolator, described condenser lens it is coupled into optical fiber output or enters certainly
Exported by space.
6. according to the wavelength locking semiconductor laser described in any one of claim 2-5, it is characterised in that: described optoisolator
By being located at before described condenser lens, replace with and be located at after described condenser lens, the centre of output optical fibre.
Wavelength locking semiconductor laser the most according to claim 1, it is characterised in that: the locking of this semiconductor laser
Wavelength is 915nm, 980nm, 10xx nm, 15xx nm and 19xx nm, and wherein, x is the numeral of 0-9.
Wavelength locking semiconductor laser the most according to claim 1, it is characterised in that: this semiconductor laser outer added with
For monitoring the photodetector of light path or/and the semiconductor cooler of the additional temperature range having for controller part.
Wavelength locking semiconductor laser the most according to claim 1, it is characterised in that: this semiconductor laser is single mode
Semiconductor laser or multimode semiconductor laser.
Wavelength locking semiconductor laser the most according to claim 1, it is characterised in that: this semiconductor laser is limit
Edge launches hetero-junctions based semiconductor laser device or the face emitting semiconductor laser of VESCEL structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620499372.8U CN205666431U (en) | 2016-05-27 | 2016-05-27 | Wavelength locking semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620499372.8U CN205666431U (en) | 2016-05-27 | 2016-05-27 | Wavelength locking semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205666431U true CN205666431U (en) | 2016-10-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201620499372.8U Active CN205666431U (en) | 2016-05-27 | 2016-05-27 | Wavelength locking semiconductor laser |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105790067A (en) * | 2016-05-27 | 2016-07-20 | 昆山华辰光电科技有限公司 | Wavelength-locked semiconductor laser |
| CN111969412A (en) * | 2020-08-17 | 2020-11-20 | 大连理工大学 | Semiconductor laser active wavelength stabilizing method |
| CN113639860A (en) * | 2021-07-19 | 2021-11-12 | 中国科学院上海光学精密机械研究所 | Measuring device and measuring method for chirp volume grating frequency spectrum diffraction curve |
-
2016
- 2016-05-27 CN CN201620499372.8U patent/CN205666431U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105790067A (en) * | 2016-05-27 | 2016-07-20 | 昆山华辰光电科技有限公司 | Wavelength-locked semiconductor laser |
| CN111969412A (en) * | 2020-08-17 | 2020-11-20 | 大连理工大学 | Semiconductor laser active wavelength stabilizing method |
| CN111969412B (en) * | 2020-08-17 | 2021-11-19 | 大连理工大学 | Semiconductor laser active wavelength stabilizing method |
| CN113639860A (en) * | 2021-07-19 | 2021-11-12 | 中国科学院上海光学精密机械研究所 | Measuring device and measuring method for chirp volume grating frequency spectrum diffraction curve |
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