CN116525499A - Wafer box scanning system - Google Patents
Wafer box scanning system Download PDFInfo
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- CN116525499A CN116525499A CN202310554132.8A CN202310554132A CN116525499A CN 116525499 A CN116525499 A CN 116525499A CN 202310554132 A CN202310554132 A CN 202310554132A CN 116525499 A CN116525499 A CN 116525499A
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- wafer
- moving platform
- laser triangulation
- axis
- triangulation sensor
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- 235000012431 wafers Nutrition 0.000 claims abstract description 226
- 238000004891 communication Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 5
- 210000003734 kidney Anatomy 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010200 validation analysis Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
- H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67294—Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
Abstract
The wafer box scanning system comprises a Z-axis moving platform, a laser triangulation sensor and a PLC system; the laser triangulation sensor is arranged on the Z-axis moving platform; the laser triangulation sensor is used for: the Z-axis moving platform drives the laser triangulation sensor to move from top to bottom, the laser triangulation sensor sends out horizontal emitted light to the wafer box through the light throwing hole, receives reflected light which is reflected by the wafer and inclined relative to the horizontal light through the light inlet hole, and triangulates the wafer in the wafer box to determine Z-axis coordinate values of the upper surface and the lower surface of each wafer from top to bottom, the thickness of each wafer, the number of each wafer and the distance between adjacent wafers; the PLC system is in communication connection with the Z-axis moving platform and the laser triangulation sensor, and receives and stores Z-axis coordinate values of the upper surface and the lower surface of each wafer, the thickness of each wafer, the number of each wafer and the distance between adjacent wafers.
Description
Technical Field
The present disclosure relates to the field of semiconductor technology, and more particularly to a wafer cassette scanning system.
Background
The wafer refers to a silicon wafer formed by cutting a silicon crystal bar.
After dicing the wafer, a polishing process is started. The wafer is polished to reduce saw cuts and surface damage on the front and back sides. Thinning the wafer and helping to relieve stress build up during dicing. After grinding, an etching and cleaning process is performed using a mixture of sodium hydroxide, acetic acid and nitric acid to mitigate damage and cracking during lapping. The key chamfering process is to round the edge of the wafer, so as to thoroughly eliminate the possibility of damage in the future circuit manufacturing process.
Prior to chamfering, the wafers are supported in cassettes in a plurality of spaced apart relation along the Z-axis and each wafer should be laid flat in the cassette (i.e., the upper and lower surfaces should be both horizontal perpendicular to the Z-axis), the cassette may be in an open or closed form. When chamfering, the wafer in the wafer box needs to be confirmed so that the manipulator can selectively carry the wafer from the wafer box for subsequent processing.
Disclosure of Invention
In view of the foregoing, it is an object of the present disclosure to provide a wafer cassette scanning system that can identify wafers within a cassette to enable a robot to selectively transport the wafers from the cassette.
Thus, a wafer box scanning system is provided, and comprises a Z-axis moving platform, a laser triangulation sensor and a PLC system; the Z-axis moving platform can move up and down along the Z axis; the laser triangulation sensor is arranged on the Z-axis moving platform to move up and down along with the up-and-down movement of the Z-axis moving platform, the laser triangulation sensor is in communication connection with the Z-axis moving platform, the laser triangulation sensor is provided with a light throwing hole and a light entering hole, the light throwing hole and the light entering hole face into a wafer box for loading a plurality of wafers, one side of the wafer box facing the laser triangulation sensor is opened to expose the plurality of wafers to the laser triangulation sensor, the plurality of wafers are supported in the wafer box at intervals along the Z-axis, the thickness direction of each wafer is in the Z-axis direction and is equal-thickness, and the wafer box is in an air environment; the laser triangulation sensor is used for: the method comprises the steps that a Z-axis moving platform drives a laser triangulation sensor to move from top to bottom, horizontal emitted light is emitted to a wafer box through a light throwing hole, reflected light which is inclined relative to the horizontal light and reflected by a wafer is received through a light entering hole, so that the Z-axis coordinate value of the upper surface and the lower surface of each wafer from top to bottom, the thickness of each wafer, the number of each wafer and the distance between adjacent wafers are determined, wherein the size of a light spot of the emitted light is smaller than the distance between the adjacent wafers along the Z-axis, the distance between the uppermost wafer and the top surface of the wafer box, the distance between the adjacent wafers along the Z-axis and the distance between the uppermost wafer and the bottom surface of the wafer box are set to be that the reflected light of the upper surface of the upper wafer in the adjacent wafer when the upper surface of the wafer is parallel to the horizontal plane can be received by the light entering hole, and the reflected light of the lower surface of the upper wafer in the adjacent wafer when the upper surface is parallel to the horizontal plane can be received by the light entering hole; the PLC system is in communication connection with the Z-axis moving platform and the laser triangulation sensor, and receives and stores Z-axis coordinate values of the upper surface and the lower surface of each wafer, the thickness of each wafer, the number of each wafer and the distance between adjacent wafers, which are determined by the laser triangulation sensor from top to bottom.
The beneficial effects of the present disclosure are as follows: in the wafer box scanning system, the Z-axis coordinate value of the upper surface and the lower surface (namely the upper edge and the lower edge) of each wafer in the box, the thickness of each wafer, the serial number of each wafer and the spacing between adjacent wafers can be determined through the Z-axis moving platform, the laser triangulation sensor and the PLC system, so that the confirmation of the wafers in the box is realized, and a manipulator in communication with the PLC system can accurately and selectively carry the wafers from the box.
Drawings
Fig. 1 is a schematic diagram of a wafer cassette scanning system according to the present disclosure.
Wherein reference numerals are as follows:
100 wafer cassette scanning system 4HMI
1Z-axis mobile platform and 5X-axis mobile platform
2 laser triangulation sensor 6Y-axis moving platform
21 light-projecting hole 200 film box
22-incidence-hole 300 wafer
3 PLC system
Detailed Description
The drawings illustrate embodiments of the present disclosure, and it is to be understood that the disclosed embodiments are merely examples of the disclosure that may be embodied in various forms and that, therefore, specific details disclosed herein are not to be interpreted as limiting, but merely as a basis for the claims and as a representative basis for teaching one skilled in the art to variously practice the disclosure.
Referring to fig. 1, wafer cassette scanning system 100 includes a Z-axis motion stage 1, a laser triangulation sensor 2, and a PLC system 3.
The Z-axis moving platform 1 can move up and down along the Z-axis.
The laser triangulation sensor 2 is mounted on the Z-axis moving platform 1 to be capable of moving up and down in the Z-axis along with the up-and-down movement of the Z-axis moving platform 1, the laser triangulation sensor 2 is in communication with the Z-axis moving platform 1, the laser triangulation sensor 2 has a light projection hole 21 and a light entrance hole 22, the light projection hole 21 and the light entrance hole 22 face into the cassette 200 carrying the plurality of wafers 300, the side of the cassette 200 facing the laser triangulation sensor 2 is opened to expose the plurality of wafers 300 to the laser triangulation sensor 2, the plurality of wafers 300 are supported in the cassette 200 at intervals from each other along the Z-axis, and the thickness direction of each wafer 300 is in the Z-axis direction and is an equal thickness wafer, and the cassette 200 is in an air environment.
The laser triangulation sensor 2 is used for: as the Z-axis moving stage 1 moves the laser triangulation sensor 2 from top to bottom, the horizontal emitted light is emitted to the wafer cassette 200 through the light-incident hole 21 and the reflected light inclined with respect to the horizontal light reflected from the wafer 300 is received through the light-incident hole 22 to triangulate the wafer 300 in the wafer cassette 200, to determine the Z-axis coordinate values of the upper and lower surfaces (i.e., the upper and lower edges of each wafer 300) of each wafer 300 from top to bottom, the thickness of each wafer 300, the number of each wafer 300, the spacing between adjacent wafers 300, wherein the size of the spot of the emitted light is smaller than the spacing between adjacent wafers 300 spaced apart from each other along the Z-axis, the top surface spacing between the uppermost wafer 300 and the wafer cassette 200, the spacing between the adjacent wafers 300 spaced apart from each other along the Z-axis, and the bottom surface spacing between the uppermost wafer 300 and the wafer 200 are set such that the reflected light from the upper surface (i.e., the upper edge) of each wafer 300 on the upper surface (i.e., the upper edge) can be received by the light-incident hole 22 and the reflected light from the lower surface (i.e., the lower edge) of the wafer 300 on the upper surface (i.e., the lower edge) of the wafer 300) can be received by the light-incident hole 22 on the upper surface (i.e., the lower edge) of the wafer 300 on the parallel surface.
The PLC system 3 is communicatively connected to the Z-axis moving stage 1 and the laser triangulation sensor 2, and the PLC system 3 receives and stores the Z-axis coordinate values of the upper and lower surfaces (i.e., upper and lower edges) of each wafer 300 from top to bottom, the thickness of each wafer 300, the number of each wafer 300, and the pitch of the adjacent wafers 300 determined by the laser triangulation sensor 2.
In operation, the method comprises the following steps:
the PLC system 3 is in communication connection with the Z-axis mobile platform 1, and controls the Z-axis mobile platform 1 to move from top to bottom, so that the Z-axis mobile platform 1 drives the laser triangulation sensor 2 to move from top to bottom, and the laser triangulation sensor 2 continuously emits horizontal emitted light to the wafer box 200 through the light throwing hole 21 in the process of moving from top to bottom;
when the emitted light is projected to the first wafer 300 in cassette 200 that is uppermost along the Z-axis:
the emitted light of the laser triangulation sensor 2 is first reflected by the upper surface (i.e. upper edge) of the first wafer 300 and the reflected light is received by the laser triangulation sensor 2 through the light entrance aperture 22,
as the Z-axis moving platform 1 drives the laser triangulation sensor 2 to move further downward, the emitted light of the laser triangulation sensor 2 moves from top to bottom, the emitted light is reflected by the peripheral side surface of the first wafer 300 and the reflected light is received by the laser triangulation sensor 2 through the light entrance hole 22,
when the laser triangulation sensor 2 is further moved down to the lower surface (i.e., lower edge) of the first wafer 300 along with the Z-axis moving platform 1, the emitted light is reflected by the lower surface (i.e., lower edge) of the first wafer 300 and the reflected light is received by the laser triangulation sensor 2 through the light entrance hole 22,
when the laser triangulation sensor 2 is moved further down along with the Z-axis moving platform 1, the emitted light completely breaks away from the lower surface (i.e., lower edge) of the first wafer 300
When the laser triangulation sensor 2 emits light, which is completely in the space between the first wafer 300 and the second wafer 300 and no reflected light is received by the laser triangulation sensor 2 through the light entrance aperture 22,
the laser triangulation sensor 2 records the Z-axis coordinate value of the downward movement of the laser triangulation sensor 2 in real time by communicating with the Z-axis moving stage 1 and records the amounts of emitted light and reflected light corresponding to the Z-axis coordinate value of the downward movement of the laser triangulation sensor 2 in real time, thereby determining the Z-axis coordinate values of the upper and lower surfaces (i.e., upper and lower edges) of the first wafer 300 based on the change of the amounts of emitted light and reflected light at the upper surface (i.e., upper edge) of the first wafer 300 and the change of the amounts of light at the lower surface (i.e., lower edge) of the first wafer 300, and further determining the thickness of the first wafer 300 by the determined Z-axis coordinate values of the upper and lower surfaces (i.e., upper and lower edges) of the first wafer 300, while the laser triangulation sensor 2 counts the wafers 300, and the PLC system 3 communicate the determined Z-axis coordinate values of the upper and lower surfaces (i.e., upper and lower edges) of the first wafer 300 and the thickness of the first wafer 300 in real time to the PLC system 3;
likewise, when the Z-axis moving stage 1 moves the laser triangulation sensor 2 from top to bottom so that the emitted light at the interval between the first wafer 300 and the second wafer 300 is projected to the second wafer 300 below the first wafer 300 located uppermost along the Z-axis in the cassette 200, the Z-axis coordinate values of the upper and lower surfaces (i.e., upper and lower edges) of the second wafer 300 and the thickness of the second wafer 300 are determined as in the case of the first wafer 300, the distance between the first wafer 300 and the second wafer 300 is determined based on the determined Z-axis coordinate values of the upper surface (i.e., upper edge) of the second wafer 300 and the Z-axis coordinate values of the lower surface (i.e., lower edge) of the first wafer 300, the laser triangulation sensor 2 communicates with the PLC system 3 in real time and transmits the determined Z-axis coordinate values of the upper and lower surfaces (i.e., upper and lower edges) of the second wafer 300, the thickness of the second wafer 300 and the distance between the first wafer 300 and the PLC system 3 to the second wafer 300;
and so on, until the axis moving platform drives the laser triangulation sensor 2 to measure from top to bottom to finish the last wafer 300 at the lowest position along the Z axis, thereby finishing the scanning of all the wafers 300 of the wafer box 200 along the Z axis direction.
In the wafer cassette scanning system 100 of the present disclosure, the Z-axis coordinate values of the upper and lower surfaces (i.e., upper and lower edges) of each wafer 300 in the cassette 200, the thickness of each wafer 300, the number of each wafer 300, the spacing of adjacent wafers 300 can be determined by the Z-axis moving stage 1, the laser triangulation sensor 2, and the PLC system 3, thereby enabling the validation of the wafers 300 within the cassette 200 for accurate and selective handling from the cassette 200 by a robot (not shown) in communication with the PLC system 3.
The laser triangulation sensor 2 can accurately determine the upper and lower surfaces (i.e., the upper and lower edges) of each wafer 300 through triangulation of incident light and reflected light, and such a non-contact measurement method does not cause any damage to the upper and lower edges of the wafer 300.
The Z-axis coordinate values of the upper and lower surfaces (i.e., the upper and lower edges) of each wafer 300, the thickness of each wafer 300, the number of each wafer 300, and the spacing between adjacent wafers 300 stored by the PLC system 3 facilitate the precise and selective handling of the corresponding wafer 300 by the robot, and not only can the precise and selective handling of the wafer 300 from the cassette 200 by the robot, but also facilitate the use of subsequent processes in the production process of the wafer 300 and the product traceability.
In one example, the PLC system 3 may access a host computer or MES (Manufacturing Execution System) system to further facilitate product traceability.
Here, it is explained that both the upper edge and the lower edge are rounded edges.
In one example, PLC system 3 stores pre-stored data for wafers 300 and cassettes 200 of different sizes and materials to verify that wafers 300 and cassettes 200 of different sizes and materials are scanned and measured, to compare the measured data with the pre-stored data to verify that the Z-axis coordinate values of the upper and lower surfaces (i.e., upper and lower edges) of each wafer 300 of wafers 300 in corresponding cassettes 200, the thickness of each wafer 300, the number of each wafer 300, the pitch of adjacent wafers 300 are correct and to determine whether each wafer 300 is skewed. The Z-axis coordinate values of the upper and lower surfaces (i.e., the upper and lower edges) of the wafer 300 when the wafer 300 is skewed may be different from the pre-stored data. The difference in the material of the wafer 300 is reflected in the peak difference in the amount of the reflected light.
The wafer 300 is sized primarily, but not limited to, 4 inches, 6 inches, 8 inches, and 12 inches. Thus, wafer cassette scanning system 100 of the present disclosure may enable scanning of cassettes 200 of wafers 300 of different specifications.
The Z-axis moving platform 1 may take the form of any known suitable movement mechanism, such as a cylinder, a linear motor, etc.
The laser triangulation sensor 2 may be any known or commercially available device, for example, the laser triangulation sensor 2 is a Kidney IL-100, and the Kidney IL-100 enables fast and high precision scanning.
As shown in fig. 1, wafer cassette scanning system 100 may further include HMI 4, HMI 4 communicatively coupled to PLC system 3 and displaying data of wafer 300 of cassette 200 scanned in real-time by PLC system 3.
As shown in fig. 1, the wafer cassette scanning system 100 further includes an X-axis moving platform 5 and a Y-axis moving platform 6, where the X-axis moving platform 5 and the Y-axis moving platform 6 are configured to drive the Z-axis moving platform 1 to perform an X-axis motion and a Y-axis motion, respectively, and the X-axis moving platform 5 and the Y-axis moving platform 6 are communicatively connected to the PLC system 3 and the laser triangulation sensor 2. By X-axis motion stage 5 and Y-axis motion stage 6 in combination with Z-axis motion stage 1, scanning of wafer 300 in cassette 200 at different coordinate positions (i.e., relative to the same reference position) can be achieved.
The relationship driven by the X-axis moving platform 5 and the Y-axis moving platform 6 may be that the Y-axis moving platform 6 drives the X-axis moving platform 5 and the Z-axis moving platform 1 as shown in fig. 1, or that the X-axis moving platform 5 drives the Y-axis moving platform 6 and the Z-axis moving platform 1.
Likewise, the X-axis moving stage 5 and the Y-axis moving stage 6 take the form of any known suitable movement mechanism, such as an air cylinder, a linear motor, or the like.
In addition, in order to facilitate positioning of cassette 200, a cassette tray (not shown) may be provided for use as a cassette 200 positioning.
The various exemplary embodiments are described using the above detailed description, but are not intended to be limited to the combinations explicitly disclosed herein. Thus, unless otherwise indicated, the various features disclosed herein may be combined together to form a number of additional combinations that are not shown for the sake of brevity.
Claims (6)
1. A wafer box scanning system is characterized in that,
the wafer box scanning system (100) comprises a Z-axis moving platform (1), a laser triangulation sensor (2) and a PLC system (3);
the Z-axis moving platform (1) can move up and down along the Z axis;
the laser triangulation sensor (2) is arranged on the Z-axis moving platform (1) so as to be capable of moving up and down along with the up-and-down movement of the Z-axis moving platform (1), the laser triangulation sensor (2) is in communication connection with the Z-axis moving platform (1), the laser triangulation sensor (2) is provided with a light projection hole (21) and a light inlet hole (22), the light projection hole (21) and the light inlet hole (22) face into the wafer box (200) for loading a plurality of wafers (300), one side of the wafer box (200) faces the laser triangulation sensor (2) to expose the plurality of wafers (300) to the laser triangulation sensor (2), the plurality of wafers (300) are supported in the wafer box (200) at intervals along the Z axis, the thickness direction of each wafer (300) is in the Z-axis direction and is equal thickness, and the wafer box (200) is in an air environment;
the laser triangulation sensor (2) is used for: along with the Z-axis moving platform (1) driving the laser triangulation sensor (2) to move from top to bottom, sending out horizontal emitted light to the wafer box (200) through the light-throwing hole (21) and receiving reflected light which is inclined relative to the horizontal light and reflected by the wafer box (300) through the light-entering hole (22) so as to carry out triangulation on the wafer (300) in the wafer box (200), determining Z-axis coordinate values of the upper surface and the lower surface of each wafer (300) from top to bottom, the thickness of each wafer (300), the number of each wafer (300) and the distance between adjacent wafers (300), wherein the size of a light spot of the emitted light is smaller than the distance between the adjacent wafers (300) and each other along the Z-axis, the distance between the uppermost wafer (300) and the top surface of the wafer box (200) and the bottom surface of the wafer box (300) which are arranged to be the upper surface of each wafer (300) which is arranged above and the upper surface of the wafer box (300) can be parallel to the light energy received by the light-entering hole (22) when the upper surface of the wafer (300) and the adjacent wafer (300) which is parallel to the upper surface of the wafer (22) which is arranged to be received;
the PLC system (3) is in communication connection with the Z-axis moving platform (1) and the laser triangulation sensor (2), and the PLC system (3) receives and stores Z-axis coordinate values of the upper surface and the lower surface of each wafer (300), the thickness of each wafer (300), the number of each wafer (300) and the distance between adjacent wafers (300) which are determined by the laser triangulation sensor (2) from top to bottom.
2. The wafer cassette scanning system of claim 1, wherein the wafer cassette scanning system comprises a wafer cassette scanner,
the PLC system (3) stores pre-stored data of the wafer (300) and the wafer box (200) aiming at different sizes and materials, so that the wafer (300) and the wafer box (200) aiming at the different sizes and materials can be checked in scanning measurement, the measured data and the pre-stored data can be compared, and Z-axis coordinate values of the upper surface and the lower surface of each wafer (300) of the wafer (300) in the corresponding wafer box (200), the thickness of each wafer (300), the number of each wafer (300), the spacing between adjacent wafers (300) are correct and whether each wafer (300) is skew is determined.
3. The wafer cassette scanning system of claim 2, wherein,
the wafer (300) is mainly 4 inches, 6 inches, 8 inches, and 12 inches in gauge.
4. The wafer cassette scanning system of claim 1, wherein the wafer cassette scanning system comprises a wafer cassette scanner,
the laser triangulation sensor (2) is a Kidney IL-100.
5. The wafer cassette scanning system of claim 1, wherein the wafer cassette scanning system comprises a wafer cassette scanner,
the wafer cassette scanning system (100) further includes an HMI (4),
HMI (4) is communicatively coupled to PLC system (3) and displays data of wafer (300) of cassette (200) scanned by PLC system (3) in real time.
6. The wafer cassette scanning system of claim 1, wherein the wafer cassette scanning system comprises a wafer cassette scanner,
the wafer box scanning system (100) further comprises an X-axis moving platform (5) and a Y-axis moving platform (6), wherein the X-axis moving platform (5) and the Y-axis moving platform (6) are used for driving the Z-axis moving platform (1) to respectively conduct X-axis direction movement and Y-axis direction movement, and the X-axis moving platform (5) and the Y-axis moving platform (6) are in communication connection with the PLC system (3) and the laser triangulation sensor (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310554132.8A CN116525499A (en) | 2023-05-16 | 2023-05-16 | Wafer box scanning system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310554132.8A CN116525499A (en) | 2023-05-16 | 2023-05-16 | Wafer box scanning system |
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| CN116525499A true CN116525499A (en) | 2023-08-01 |
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| CN202310554132.8A Pending CN116525499A (en) | 2023-05-16 | 2023-05-16 | Wafer box scanning system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116759359A (en) * | 2023-08-18 | 2023-09-15 | 湖北江城芯片中试服务有限公司 | Wafer positioning method and device, computer equipment and readable storage and program product |
| CN117766423A (en) * | 2024-02-22 | 2024-03-26 | 沈阳元创半导体有限公司 | Compensation system and method for wafer thickness scanning result |
-
2023
- 2023-05-16 CN CN202310554132.8A patent/CN116525499A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116759359A (en) * | 2023-08-18 | 2023-09-15 | 湖北江城芯片中试服务有限公司 | Wafer positioning method and device, computer equipment and readable storage and program product |
| CN116759359B (en) * | 2023-08-18 | 2023-11-17 | 湖北江城芯片中试服务有限公司 | Wafer positioning method and device, computer equipment and readable storage and program product |
| CN117766423A (en) * | 2024-02-22 | 2024-03-26 | 沈阳元创半导体有限公司 | Compensation system and method for wafer thickness scanning result |
| CN117766423B (en) * | 2024-02-22 | 2024-04-16 | 沈阳元创半导体有限公司 | Compensation system and method for wafer thickness scanning result |
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