CN116520595A - Electro-optical modulation structure, system, method and equipment - Google Patents
Electro-optical modulation structure, system, method and equipment Download PDFInfo
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- CN116520595A CN116520595A CN202310495750.XA CN202310495750A CN116520595A CN 116520595 A CN116520595 A CN 116520595A CN 202310495750 A CN202310495750 A CN 202310495750A CN 116520595 A CN116520595 A CN 116520595A
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000003287 optical effect Effects 0.000 claims abstract description 50
- 230000010287 polarization Effects 0.000 claims description 49
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 230000005684 electric field Effects 0.000 claims description 17
- 238000001914 filtration Methods 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 239000011247 coating layer Substances 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 14
- 230000009286 beneficial effect Effects 0.000 abstract description 5
- 230000006870 function Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 238000004590 computer program Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000009977 dual effect Effects 0.000 description 5
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- -1 si3N4 Chemical compound 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0136—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour for the control of polarisation, e.g. state of polarisation [SOP] control, polarisation scrambling, TE-TM mode conversion or separation
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0311—Structural association of optical elements, e.g. lenses, polarizers, phase plates, with the crystal
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/217—Multimode interference type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention provides an electro-optic modulation structure, a system, a method and equipment, wherein the electro-optic modulation structure comprises: the first multimode interference coupler and the second multimode interference coupler are symmetrically arranged along a first direction and are respectively used for splitting and combining light; a set of electro-optic modulators and photo-polarizers comprising: the first electro-optic modulation and optical polarizer and the second electro-optic modulation and optical polarizer are symmetrically arranged between the first multimode interference coupler and the second multimode interference coupler along a second direction and are coupled based on surface plasmon polaritons, and the first electro-optic modulation and optical polarizer and the second electro-optic modulation and optical polarizer are used for electro-optically modulating the split light input from the first multimode interference coupler and outputting the split light subjected to electro-optic modulation to the second multimode interference coupler for beam combination; and the extrinsic mode reflecting structure is used for connecting the first electro-optical modulation and light polarizer and the second electro-optical modulation and light polarizer. The scheme disclosed by the invention reduces the integration area of each device and is beneficial to on-chip integration.
Description
Technical Field
The present invention relates to the field of optical chips, and in particular, to an electro-optical modulation structure, system, method, and apparatus.
Background
The electronic integrated chip adopts a current signal as an information carrier, and the photon chip adopts a light wave with higher frequency as an information carrier. Photonic integrated circuits and optical interconnects exhibit lower transmission loss, wider transmission bandwidth, smaller time delays, and greater immunity to electromagnetic interference than electronic integrated circuits or electrical interconnect technologies.
The performance of the optical chip mainly considers two aspects of the integration level of the optical chip and the size of an optical device, and in the related field of optical chip integration, the following problems exist: for electro-optical modulation, a modulator and a polarizer are generally required at the same time, and the two devices cannot be combined into one, so that the area of an optical chip is overlarge, on-chip integration is not facilitated, and further, when a plurality of polarizers are required in a system, the area of the chip is rapidly increased, and on-chip integration is not facilitated.
Disclosure of Invention
The present disclosure summarizes aspects of the embodiments and should not be used to limit the claims. Other embodiments may be envisaged in light of the techniques described herein, as will be apparent to those of ordinary skill in the art upon studying the following drawings and detailed description, and are intended to be included within the scope of the present application.
In view of this, the present invention provides an electro-optical modulation structure, system, method and apparatus, which at least solves the problems that the electro-optical modulation generally requires both modulator and polarizer, and the two devices cannot be combined together, which results in an excessively large area of the optical chip, which is not beneficial to on-chip integration, and further, when multiple polarizers are required in the system, the area of the chip is rapidly increased, which is not beneficial to on-chip integration.
Based on the above object, an aspect of an embodiment of the present invention provides an electro-optical modulation structure including: the first multimode interference coupler and the second multimode interference coupler are symmetrically arranged along a first direction and are respectively used for splitting and combining light; a set of electro-optic modulators and photo-polarizers comprising: the first electro-optic modulation and optical polarizer and the second electro-optic modulation and optical polarizer are symmetrically arranged between the first multimode interference coupler and the second multimode interference coupler along a second direction and are coupled based on surface plasmon polaritons, and the first electro-optic modulation and optical polarizer and the second electro-optic modulation and optical polarizer are used for electro-optically modulating the split light input from the first multimode interference coupler and outputting the split light subjected to electro-optic modulation to the second multimode interference coupler for beam combination; and the extrinsic mode reflecting structure is used for connecting the first electro-optical modulation and light polarizer and the second electro-optical modulation and light polarizer.
In some embodiments, the first and second electro-optic modulation and polarisers comprise: a G-S electrode of impedance matching characteristics, a grating-type extrinsic mode reflective structure surrounded by the G-S electrode, and a metal-dielectric connected extrinsic mode reflective structure between the G-S electrodes.
In some embodiments, the cladding of the first and second electro-optic modulators and polarizers is at least one of SiO2, si3N4, al2O 3.
In some embodiments, the extrinsic mode reflecting structure includes an extrinsic mode reflecting structure connected by a metal-dielectric-metal for filtering extrinsic modes within the plasma optical waveguide of the first electro-optic modulation and light polarizer and the second electro-optic modulation and light polarizer surface.
In some embodiments, the distance between the metal of the extrinsic mode reflective structure and the medium is 5-200 nanometers, the width of the medium is 10-300 nanometers, and the length of the metal-medium-metal is 0.1-9 micrometers.
In another aspect of the embodiments of the present invention, there is also provided an electro-optical modulation system, including: at least one set of electro-optic modulation structures comprising two electro-optic modulation structures as described above symmetrically arranged along a second direction; the polarization beam splitter is arranged at the input side of the group of electro-optical modulation structures and is used for separating input light into a transverse electric field mode and the transverse magnetic field mode and outputting the transverse electric field mode and the transverse magnetic field mode to the two electro-optical modulation structures respectively; the polarization beam combiner is arranged at the output side of the group of electro-optical modulation structures and is used for combining the split light subjected to electro-optical modulation by the group of electro-optical modulation structures and outputting the combined light.
In some embodiments, a medium for blocking coupling crosstalk between the two electro-optical modulation structures symmetrically arranged along the second direction is included between the two electro-optical modulation structures.
In some embodiments, the polarization beam splitter further comprises two polarization rotators for mutually converting the transverse electric field mode and the transverse magnetic field mode, wherein one polarization rotator is connected between the polarization beam splitter and the input end of one electro-optical modulation structure for converting the transverse magnetic field mode, and the other polarization rotator is connected between the output end of the other electro-optical modulation structure and the polarization beam combiner for converting the transverse electric field mode.
In another aspect of the embodiment of the present invention, there is also provided a method for electro-optical modulation, including: the input light is separated into a transverse electric field mode and a transverse magnetic field mode by a polarization beam splitter; respectively feeding the transverse electric field mode and the transverse magnetic field mode into two electro-optic modulation structures which are symmetrically arranged in a group of electro-optic modulation structures to carry out electro-optic modulation; and inputting the split light subjected to electro-optic modulation by the two electro-optic modulation structures into the polarization beam combiner for beam combination and outputting.
In another aspect of the embodiments of the present invention, there is also provided a computer device including at least one processor; and a memory storing computer instructions executable on the processor, the instructions when executed by the processor performing the steps of the method described above.
In another aspect of the embodiments of the present invention, there is also provided a computer-readable storage medium storing a computer program which, when executed by a processor, implements the method steps as described above.
The invention has at least the following beneficial effects: the electro-optical modulation structure is coupled based on the surface plasmon polaritons, so that the electro-optical modulation structure has the dual functions of an electro-optical modulator and a polarizer, and the extrinsic mode filtering structure is arranged, so that the integrated area of each device is reduced, the on-chip integration is facilitated, the use amount of the device of the electro-optical modulation structure is reduced, and the integration level of the system is greatly improved under the condition that the electro-optical modulation is not influenced.
Drawings
In order to more clearly illustrate the embodiments of the invention or the solutions of the prior art, the drawings which are necessary for the description of the embodiments or the prior art will be briefly described, it being evident that the drawings in the following description are only some embodiments of the invention and that other embodiments can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of an electro-optic modulation structure according to an embodiment of the present application;
FIG. 2 is a schematic diagram of an electro-optic modulator and an optical polarizer according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an electro-optic modulation system according to an embodiment of the present invention;
FIG. 4 shows a flow chart of a method of electro-optic modulation provided by an embodiment of the present application;
FIG. 5 is a schematic diagram of a computer device according to an embodiment of the present invention;
fig. 6 shows a schematic structural diagram of a computer-readable storage medium according to an embodiment of the present invention.
Detailed Description
Embodiments of the present disclosure are described below. However, it is to be understood that the disclosed embodiments are merely examples and that other embodiments may take various alternative forms. The figures are not necessarily to scale; some functions may be exaggerated or minimized to show details of particular components. Therefore, specific structural and functional details disclosed herein are not to be interpreted as limiting, but merely as a representative basis for teaching one skilled in the art to variously employ the present invention. As will be appreciated by one of ordinary skill in the art, the various features illustrated and described with reference to any one of the figures may be combined with features illustrated in one or more other figures to produce embodiments that are not explicitly illustrated or described. The combination of features shown provides representative embodiments for typical applications. However, various combinations and modifications of the features consistent with the teachings of the present disclosure may be desired for certain specific applications or implementations.
In this document, when an element or portion is referred to as being "on," "engaged to," "connected to," or "coupled to" another element or portion, it can be directly on, engaged, connected, or coupled to the other element or portion, or intervening elements or portions may be present. In contrast, when an element is referred to as being "directly on," "directly engaged to," "directly connected to," or "directly coupled to" another element or portion, there may be no intervening elements or portions present. Other words used to describe the relationship between elements should be interpreted in a similar fashion.
Furthermore, it should be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
The multimode interference coupler (Multimode Interference coupler, MMI coupler) refers to a self-imaging effect formed by the interference of the modes of each order in the multimode waveguide. In a multimode waveguide, multiple guided modes interfere with each other along the direction of wave propagation, and one or more replicated images of the input field occur at periodic intervals, which is the self-image of the multimode waveguide.
Surface plasmon polaritons (Surface Plasmon Polaritons, SPP) are electromagnetic waves in the infrared or visible light band that propagate on metal-dielectric or metal-air interfaces. Surface plasmon polaritons clarify that this physical phenomenon includes both electron motion in metal (surface plasmon) and electromagnetic waves (polaritons) propagating in air or dielectric.
A Mach-zehnder modulator (Mach-Zehnder Modulator, MZM) is a two-optical branch that splits the input light into two equal signals that enter the modulator separately. MZM modulators are currently the dominant modulators that can achieve high quality encoding, mostly based on lithium niobate material systems, which require a size on the order of cm 2. Silicon-based modulators have been increasingly capable of operating at bandwidths around up to 100GHz in recent years, and lengths on the order of hundreds of microns to millimeters. Resonant silicon ring modulators or germanium-based electroabsorption modulators, although small in size, have difficulty achieving advanced coded modulation formats. So far, high capacity transmission still predominates with MZM modulators.
One or more embodiments of the present application will be described below with reference to the accompanying drawings.
Based on the above object, a first aspect of the embodiments of the present invention proposes an embodiment of an electro-optical modulation structure. Fig. 1 is a schematic diagram of an electro-optical modulation structure provided in an embodiment of the present application, where, as shown in fig. 1, the electro-optical modulation structure includes: a first multimode interference coupler (1×2MMI with 1 input and 2 output) 101 and a second multimode interference coupler (2×1MMI with 2 input and 1 output) 102 are symmetrically arranged along the first direction X and are respectively used for splitting and combining the input light beams. The electro-optical modulation structure further comprises a set of electro-optical modulators and optical polarizers, comprising: the first electro-optical modulation and light polarizer 103 and the second electro-optical modulation and light polarizer 104 are symmetrically arranged between the first multimode interference coupler 101 and the second multimode interference coupler 102 along the second direction Y, and are coupled based on Surface Plasmon Polaritons (SPPs) for electro-optically modulating the split light input from the first multimode interference coupler 101 and outputting the split light of which the electro-optical modulation is completed to the second multimode interference coupler 102 for beam combination; and an extrinsic mode reflecting structure 105 for connecting the first electro-optic modulation and light polarizer 103 and the second electro-optic modulation and light polarizer 104. In some embodiments of the present invention, the extrinsic mode reflecting structure 105 may be a metal-dielectric-metal structure, and the dielectric waveguide of the extrinsic mode filtering structure 105 is typically a silicon waveguide for further filtering extrinsic modes within the surface plasmon optical waveguide.
In several embodiments of the invention, the spacing d between the metal and the medium m-i Can be 5-200 nm, and the width w of the medium in the metal-medium-metal structure i May be 10 to 300nm, and the length of the metal-dielectric-metal structure may be 0.1 to 9 μm. Metals used in metal-dielectric-metal structures typically include, but are not limited to, au, ag, etc., with a thin layer of chromium or other metal typically present under the metal. Further, in some embodiments of the present invention, the cladding layers of the first electro-optic modulation and polarizer 103 and the second electro-optic modulation and polarizer 104 generally include, but are not limited to, materials such as SiO2, si3N4, al2O3, or polymers. The media within the first electro-optic modulation and polarizer 103 and the second electro-optic modulation and polarizer 104 include, but are not limited to, si and the like. The electro-optic modulation and optical polarizer has low insertion loss characteristics, and the insertion loss value is generally 1.12-1.55 dB in the wavelength range of 1310-1550 nanometers. Meanwhile, the electro-optical modulation and optical polarizer based on Surface Plasmon Polariton (SPP) coupling has the characteristic of small size, the size of the device is not more than 25 microns, and the electro-optical modulation and optical polarizer can work in a scene with bandwidth of more than 15 GHz.
Fig. 2 is a schematic structural diagram of an electro-optical modulator and polarizer according to an embodiment of the present application, as shown in fig. 2, where the electro-optical modulator and polarizer includes a G-S electrode 108 with an impedance matching characteristic, a grating type extrinsic mode reflection structure 106 surrounded by the G-S electrode 108, and a metal-dielectric connected extrinsic mode reflection structure 107 located between the G-S electrode 108, such as the metal-dielectric extrinsic mode reflection structure 107 in the metal-dielectric-metal mentioned above. The characteristic impedance of the G-S (group-Signal) electrode 108 is typically 50Ω or 75Ω or other desired value. The length L of the electro-optical modulation and the optical polarizer is generally 0.5-15 mu m, the width W is generally 0.5-9 mu m, and the width W is generally slot The size of (a) is generally 0.02-0.25 μm, w SPP The size of (a) is generally 0.04-0.3 μm, w D The size of the angle alpha is generally 0.35-0.65 mu m, the size of the angle alpha is generally 0.02-2 mu m<Beta, the difference beta-alpha is generally less than 15 deg.. Because the SPP-based electro-optic modulation structure has the function of polarization selection, no additional polarizer is needed, and the system is greatly improvedIntegration and reduced optical energy loss. Specifically, the electro-optical modulator has the dual functions of the electro-optical modulator and the polarizer, and the extrinsic mode filtering structure is adopted, so that the integrated area of each device is reduced, on-chip integration is facilitated, the use amount of the device of the electro-optical modulation structure is reduced, and the integration level of the system is greatly improved under the condition that the electro-optical modulation is not influenced.
In a second aspect of the embodiment of the present invention, an electro-optical modulation system is provided, and fig. 3 is a schematic structural diagram of the electro-optical modulation system provided in the embodiment of the present application, and as shown in fig. 3, taking a system on a chip applied to an optical chip as an example, the electro-optical modulation system includes: at least one group of electro-optical modulation structures 201, where the electro-optical modulation structures 201 have a polarizer function based on SPP, and include two electro-optical modulation structures 201 as described above symmetrically arranged along the second direction Y, where the electro-optical modulation structures 201 include G-S-G-S-G (group-Signal-group, ground-Signal-Ground) electrodes. The electro-optical modulation system further includes a polarization beam splitter 109 disposed on the input side of the group of electro-optical modulation structures 201, for separating the input light into a transverse electric field mode (Transverse Electric, TE mode) and a transverse magnetic field mode (Transverse Magnetic, TM mode) and outputting the split light to the two electro-optical modulation structures; and a polarization beam combiner 110 disposed at an output side of the group of electro-optical modulation structures, and configured to combine the split light subjected to the electro-optical modulation by the group of electro-optical modulation structures and output the combined light. Because the electro-optic modulation and the optical polarizer in the electro-optic modulation structure 201 have the dual functions of the electro-optic modulator and the polarizer, the TM mode is separated to the upper light path of the system and then is converted into the TE mode through the polarization rotator 111, then the TE mode is subjected to electro-optic modulation through the electro-optic modulation structure 201 based on SPP, and the TE mode is still used after the electro-optic modulation through the electro-optic modulation structure 201, and finally the TE mode is transmitted into the polarization beam combiner 110 at the output end; the TE mode is separated to the lower optical path of the system, then is subjected to electro-optical modulation through the electro-optical modulation structure 201 based on SPP, is still a TE mode after being subjected to electro-optical modulation through the electro-optical modulation structure 201, is converted into a TM mode through the polarization rotator 111, and finally is transmitted to the polarization beam combiner 110 at the output end, and the upper optical path and the lower optical path combine the TE mode and the TM mode into one path for output. The electro-optical modulation system comprises the polarization beam splitter 109, the polarization beam combiner 110, the electro-optical modulation structure 201 and the polarization rotator 111, so that polarization beam splitting and beam combining of light beams and beam splitting and beam combining of similar polarized light based on a multimode interference (MMI) principle can be realized, the polarization rotator 111 and the electro-optical modulation and the polarizer in the electro-optical modulation structure 201 of the system are all SPP-based devices, and meanwhile, the dual functions of the electro-optical modulator and the polarizer are realized, so that an additional polarizer is not needed, the integrated area of each device is reduced by nearly one time compared with that of a traditional on-chip polarization multiplexing system, the integrated area of the system is greatly reduced, the integrated level of the system is greatly improved under the condition that the electro-optical modulation is not influenced, the system size and the optical path insertion loss are obviously reduced, the on-chip integration is facilitated, and the electro-optical modulation system is suitable for a medium-high speed optical communication system. Meanwhile, the electro-optical modulation and optical polarizer of the system comprises an extrinsic mode filtering structure, so that a high enough polarization extinction ratio can be ensured under the condition of no polarizer.
According to several embodiments of the invention, a medium for blocking coupling crosstalk between the two electro-optical modulation structures arranged symmetrically along the second direction is comprised between the two electro-optical modulation structures.
According to several embodiments of the present invention, the electro-optical modulation system further comprises two polarization rotators for mutually converting the transverse electric field mode and the transverse magnetic field mode, wherein one of the polarization rotators is connected between the polarization beam splitter and the input end of one electro-optical modulation structure to convert the transverse magnetic field mode, and the other polarization rotator is connected between the output end of the other electro-optical modulation structure and the polarization beam combiner to convert the transverse electric field mode.
According to several embodiments of the present invention, the first and second electro-optical modulation and polarisers comprise: a G-S electrode of impedance matching characteristics, a grating-type extrinsic mode reflective structure surrounded by the G-S electrode, and a metal-dielectric connected extrinsic mode reflective structure between the G-S electrodes.
According to several embodiments of the present invention, the cladding layers of the first electro-optical modulation and polarizer and the second electro-optical modulation and polarizer are at least one of SiO2, si3N4, and Al2O 3.
According to several embodiments of the present invention, the extrinsic mode reflecting structure further comprises an extrinsic mode reflecting structure connected by metal-dielectric-metal for filtering extrinsic modes within the plasma optical waveguide of the first electro-optic modulation and optical polarizer and the second electro-optic modulation and optical polarizer surface.
According to several embodiments of the present invention, the distance between the metal of the extrinsic mode reflective structure and the medium is 5 to 200 nanometers, the width of the medium is 10 to 300 nanometers and the length of the metal-medium-metal is 0.1 to 9 micrometers.
The electro-optical modulation system comprises a polarization beam splitter, a polarization beam combiner, an electro-optical modulation and light polarizer and a polarization rotator, wherein the polarization beam splitter and the polarization beam combiner can realize polarization beam splitting and beam combining of light beams and splitting and beam combining of similar polarized light based on a multimode interference (MMI) principle, and the polarization rotator and the electro-optical modulation and light polarizer of the system are all SPP-based devices and have dual functions of the electro-optical modulator and the polarizer, so that the electro-optical modulation system does not need an additional polarizer, is nearly doubled compared with the device area of the traditional on-chip polarization multiplexing system, greatly reduces the integrated area of each device and the whole size of the system, greatly improves the integrated level of the system under the condition of not affecting the electro-optical modulation, obviously reduces the system size and the optical path insertion loss, is beneficial to on-chip integration, and can be suitable for a medium-high speed optical communication system. Meanwhile, the electro-optical modulation and optical polarizer of the system comprises an extrinsic mode filtering structure, so that a high enough polarization extinction ratio can be ensured under the condition of no polarizer.
In a third aspect of embodiments of the present invention, a method of electro-optic modulation is presented. Fig. 4 is a flow chart illustrating a method of electro-optic modulation provided by the present invention. As shown in fig. 4, a method for electro-optical modulation provided by the present invention includes:
s1, separating input light into a transverse electric field mode and a transverse magnetic field mode through a polarization beam splitter;
s2, respectively feeding the transverse electric field mode and the transverse magnetic field mode into two electro-optic modulation structures which are symmetrically arranged in a group of electro-optic modulation structures to carry out electro-optic modulation;
s3, inputting the split light subjected to electro-optic modulation by the two electro-optic modulation structures into the polarization beam combiner for beam combination and outputting.
In a fourth aspect of the embodiment of the present invention, a computer device is provided, and fig. 5 shows a schematic structural diagram of a computer device provided in the embodiment of the present invention. As shown in fig. 5, a computer device provided by an embodiment of the present invention includes the following modules: at least one processor 021; and a memory 022, the memory 022 storing computer instructions 023 executable on the processor 021, the computer instructions 023 implementing the steps of the method as described above when executed by the processor 021.
The invention also provides a computer readable storage medium. Fig. 6 is a schematic structural diagram of a computer-readable storage medium according to an embodiment of the present invention. As shown in fig. 6, the computer-readable storage medium 031 stores a computer program 032 which, when executed by a processor, performs the steps of the method as described above.
Finally, it should be noted that, as will be understood by those skilled in the art, implementing all or part of the above-described methods in the embodiments may be implemented by a computer program to instruct related hardware, and the program of the method for setting system parameters may be stored in a computer readable storage medium, where the program may include the flow of the embodiments of the methods described above when executed. The storage medium of the program may be a magnetic disk, an optical disk, a read-only memory (ROM), a random-access memory (RAM), or the like. The computer program embodiments described above may achieve the same or similar effects as any of the method embodiments described above.
Furthermore, the method disclosed according to the embodiment of the present invention may also be implemented as a computer program executed by a processor, which may be stored in a computer-readable storage medium. The above-described functions defined in the methods disclosed in the embodiments of the present invention are performed when the computer program is executed by a processor.
Furthermore, the above-described method steps and system units may also be implemented using a controller and a computer-readable storage medium storing a computer program for causing the controller to implement the above-described steps or unit functions.
Those of skill would further appreciate that the various illustrative logical blocks, modules, circuits, and algorithm steps described in connection with the disclosure herein may be implemented as electronic hardware, computer software, or combinations of both. To clearly illustrate this interchangeability of hardware and software, various illustrative components, blocks, modules, circuits, and steps have been described above generally in terms of their functionality. Whether such functionality is implemented as software or hardware depends upon the particular application and design constraints imposed on the overall system. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present disclosure.
In one or more exemplary designs, the functions may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software, the functions may be stored on or transmitted over as one or more instructions or code on a computer-readable medium. Computer-readable media includes both computer storage media and communication media including any medium that facilitates transfer of a computer program from one location to another. A storage media may be any available media that can be accessed by a general purpose or special purpose computer. By way of example, and not limitation, such computer-readable media can comprise RAM, ROM, EEPROM, CD-ROM or other optical disk storage, magnetic disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and that can be accessed by a general purpose or special purpose computer or general purpose or special purpose processor. Further, any connection is properly termed a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using a coaxial cable, fiber optic cable, twisted pair, digital Subscriber Line (DSL), or wireless technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, D0L, or wireless technologies such as infrared, radio, and microwave are included in the definition of medium. Disk and disc, as used herein, includes Compact Disc (CD), laser disc, optical disc, digital Versatile Disc (DVD), floppy disk, blu-ray disc where disks usually reproduce data magnetically, while discs reproduce data optically with lasers. Combinations of the above should also be included within the scope of computer-readable media.
The foregoing is an exemplary embodiment of the present disclosure, but it should be noted that various changes and modifications could be made herein without departing from the scope of the disclosure as defined by the appended claims. The functions, steps and/or actions of the method claims in accordance with the disclosed embodiments described herein need not be performed in any particular order. Furthermore, although elements of the disclosed embodiments may be described or claimed in the singular, the plural is contemplated unless limitation to the singular is explicitly stated.
It should be understood that as used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly supports the exception. It should also be understood that "and/or" as used herein is meant to include any and all possible combinations of one or more of the associated listed items.
The foregoing embodiment of the present invention has been disclosed with reference to the number of embodiments for the purpose of description only, and does not represent the advantages or disadvantages of the embodiments.
It will be understood by those skilled in the art that all or part of the steps for implementing the above embodiments may be implemented by hardware, or may be implemented by a program for instructing relevant hardware, and the program may be stored in a computer readable storage medium, where the storage medium may be a read-only memory, a magnetic disk or an optical disk, etc.
Those of ordinary skill in the art will appreciate that: the above discussion of any embodiment is merely exemplary and is not intended to imply that the scope of the disclosure of embodiments of the invention, including the claims, is limited to such examples; combinations of features of the above embodiments or in different embodiments are also possible within the idea of an embodiment of the invention, and many other variations of the different aspects of the embodiments of the invention as described above exist, which are not provided in detail for the sake of brevity. Therefore, any omission, modification, equivalent replacement, improvement, etc. of the embodiments should be included in the protection scope of the embodiments of the present invention.
Claims (10)
1. An electro-optic modulation structure comprising:
the first multimode interference coupler and the second multimode interference coupler are symmetrically arranged along a first direction and are respectively used for splitting and combining light;
a set of electro-optic modulators and photo-polarizers comprising:
the first electro-optic modulation and optical polarizer and the second electro-optic modulation and optical polarizer are symmetrically arranged between the first multimode interference coupler and the second multimode interference coupler along a second direction and are coupled based on surface plasmon polaritons, and the first electro-optic modulation and optical polarizer and the second electro-optic modulation and optical polarizer are used for electro-optically modulating the split light input from the first multimode interference coupler and outputting the split light subjected to electro-optic modulation to the second multimode interference coupler for beam combination;
and the extrinsic mode reflecting structure is used for connecting the first electro-optical modulation and light polarizer and the second electro-optical modulation and light polarizer.
2. The structure of claim 1, wherein the first and second electro-optic modulation and polarizer each comprise a G-S electrode of impedance matching characteristics, a grating-type extrinsic mode reflective structure surrounded by the G-S electrode, and a metal-dielectric connected extrinsic mode reflective structure between the G-S electrodes.
3. The structure according to claim 2, characterized in thatThe coating layers of the first electro-optical modulation and optical polarizer and the second electro-optical modulation and optical polarizer are SiO 2 、Si 3 N 4 、Al 2 O 3 At least one of them.
4. The structure of claim 1, wherein the extrinsic mode reflecting structure comprises a metal-dielectric-metal connected extrinsic mode reflecting structure for filtering extrinsic modes within a plasma optical waveguide of the first electro-optic modulation and polarizer and the second electro-optic modulation and polarizer surface.
5. The structure of claim 4 wherein the distance between the metal of the extrinsic mode reflective structure and the medium is between 5 and 200 nanometers, the width of the medium is between 10 and 300 nanometers and the metal-medium-metal length is between 0.1 and 9 microns.
6. An electro-optic modulation system comprising:
at least one set of electro-optical modulation structures comprising two electro-optical modulation structures according to any one of claims 1 to 5 symmetrically arranged along the second direction;
the polarization beam splitter is arranged at the input side of the group of electro-optical modulation structures and is used for separating input light into a transverse electric field mode and a transverse magnetic field mode and outputting the transverse electric field mode and the transverse magnetic field mode to the two electro-optical modulation structures respectively;
the polarization beam combiner is arranged at the output side of the group of electro-optical modulation structures and is used for combining the split light subjected to electro-optical modulation by the group of electro-optical modulation structures and outputting the combined light.
7. The system of claim 6, wherein the two electro-optic modulation structures include a medium therebetween for blocking coupling crosstalk between the two electro-optic modulation structures symmetrically disposed along the second direction.
8. The system of claim 6, further comprising two polarization rotators for mutually converting the transverse electric field mode and the transverse magnetic field mode, wherein one of the polarization rotators is connected between the polarization beam splitter and the input end of one of the electro-optical modulation structures for converting the transverse magnetic field mode, and the other of the polarization rotators is connected between the output end of the other of the electro-optical modulation structures and the polarization beam combiner for converting the transverse electric field mode.
9. A method of electro-optic modulation comprising:
the input light is separated into a transverse electric field mode and a transverse magnetic field mode by a polarization beam splitter;
respectively feeding the transverse electric field mode and the transverse magnetic field mode into two electro-optic modulation structures which are symmetrically arranged in a group of electro-optic modulation structures to carry out electro-optic modulation;
and inputting the split light subjected to electro-optic modulation by the two electro-optic modulation structures into the polarization beam combiner for beam combination and outputting.
10. A computer device, comprising:
at least one processor; and
a memory storing computer instructions executable on the processor, the memory performing the method of claim 9 when the instructions are executed.
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