CN116488438A - High-voltage integrated circuit - Google Patents

High-voltage integrated circuit Download PDF

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Publication number
CN116488438A
CN116488438A CN202310400545.0A CN202310400545A CN116488438A CN 116488438 A CN116488438 A CN 116488438A CN 202310400545 A CN202310400545 A CN 202310400545A CN 116488438 A CN116488438 A CN 116488438A
Authority
CN
China
Prior art keywords
circuit
output
power supply
resistor
output end
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310400545.0A
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Chinese (zh)
Inventor
冯宇翔
左安超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangdong Huixin Semiconductor Co Ltd
Original Assignee
Guangdong Huixin Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guangdong Huixin Semiconductor Co Ltd filed Critical Guangdong Huixin Semiconductor Co Ltd
Priority to CN202310400545.0A priority Critical patent/CN116488438A/en
Publication of CN116488438A publication Critical patent/CN116488438A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
    • H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0025—Arrangements for modifying reference values, feedback values or error values in the control loop of a converter
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

The invention provides a high-voltage integrated circuit, which comprises a power supply circuit, an overcurrent protection circuit, an overtemperature protection circuit, an error reporting circuit and a driving circuit, wherein the overcurrent protection circuit is connected with the power supply circuit; the first input end of the overcurrent protection circuit is used for receiving an external ITRIP signal, the second input end of the overcurrent protection circuit is connected with the output end of the overtemperature protection circuit, the first output end of the overcurrent protection circuit is connected with the input end of the error reporting circuit, the second output end of the overcurrent protection circuit is connected with the input end of the driving circuit, the first output end of the error reporting circuit is connected with the control end of the driving circuit, the second output end of the error reporting circuit is connected with an external processor, the power supply end of the driving circuit is connected with the output end of the power supply circuit, the output end of the driving circuit is connected with an external switch tube, and the driving circuit drives the external switch tube according to the signal output by the error reporting circuit. The high-voltage integrated circuit is beneficial to avoiding the premature overcurrent of the power device driven by the HVIC at high temperature and improving the long-term working reliability of the product.

Description

High-voltage integrated circuit
Technical Field
The present invention relates to the field of semiconductor circuit application, and in particular, to a high voltage integrated circuit.
Background
A high voltage integrated circuit, HVIC, is an integrated circuit product that converts MCU signals into drive IGBT signals. The HVIC integrates the PMOS tube, the NMOS tube, the triode, the diode, the voltage stabilizing tube, the resistor and the capacitor to form circuits such as a Schmitt, a low voltage LEVELSHIFT, a high voltage LEVELSHIFT, a pulse generating circuit, a delay circuit, a filter circuit, an overcurrent protection circuit, an overheat protection circuit, an undervoltage protection circuit, a bootstrap circuit and the like. On one hand, the HVIC receives the control signal of the MCU to drive the subsequent IGBT or MOS to work, and on the other hand, the HVIC sends the state detection signal of the system back to the MCU. Is a critical chip inside the IPM.
However, when the HVIC is applied to a terminal, the switching device of the back-end inverter circuit driven is often required to bear high-temperature, high-voltage and high-current impact environments, and the subsequent circuit needs to be protected by matching with an overcurrent detection port ITRIP of the HVIC, but the characteristics of the switching device of the back-end inverter part at high temperature change, such as the current capacity, and the current capacity is greatly reduced at high temperature, so that the long-term working reliability of the product is low.
Accordingly, there is a need to provide a new high voltage integrated circuit to solve the above-mentioned problems.
Disclosure of Invention
In view of the above shortcomings of the related art, the present invention provides a high voltage integrated circuit.
In order to solve the technical problems, an embodiment of the present invention provides a high voltage integrated circuit, including a power supply circuit, an overcurrent protection circuit, an overtemperature protection circuit, an error reporting circuit and a driving circuit; the first input end of the overcurrent protection circuit is used for receiving an external ITRIP signal, the second input end of the overcurrent protection circuit is connected with the output end of the overtemperature protection circuit, the first output end of the overcurrent protection circuit is connected with the input end of the error reporting circuit, the second output end of the overcurrent protection circuit is connected with the input end of the driving circuit, the first output end of the error reporting circuit is connected with the control end of the driving circuit, the second output end of the error reporting circuit is connected with an external processor, the power supply end of the driving circuit is connected with the output end of the power supply circuit, the output end of the driving circuit is connected with an external switch tube, and the error reporting circuit is used for judging whether the ITRIP signal received by the input end of the overcurrent protection circuit is an error signal or not, if yes, the error signal is transmitted to the driving circuit, and the driving circuit drives the external switch tube according to the signal output by the error reporting circuit.
Preferably, the driving circuit includes a high-side driving circuit, an interlocking circuit, and a low-side driving circuit, and the high-side driving circuit is electrically connected with the low-side driving circuit through the interlocking circuit.
Preferably, the high voltage integrated circuit further comprises an enabling circuit and an overvoltage protection circuit.
Preferably, the high-side driving circuit comprises a bootstrap circuit and a high-side undervoltage protection circuit, and a power supply end of the bootstrap circuit is connected with an output end of the power supply circuit.
Preferably, the high-voltage integrated circuit further comprises a power supply under-voltage protection circuit electrically connected with the power supply circuit.
Preferably, the overcurrent protection circuit includes an action current detection signal input end, a filter circuit, a comparison circuit, a level conversion circuit, a FAULT logic control circuit and a FAULT NMOS device, wherein the action current detection signal input end is connected with the input end of the filter circuit, the output end of the filter circuit is connected with the input end of the comparison circuit, the output end of the comparison circuit is connected with the input end of the level conversion circuit, the output end of the level conversion circuit is connected with the input end of the FAULT logic control circuit, and the output end of the FAULT logic control circuit is connected with the FAULT NMOS device.
Preferably, the over-temperature circuit includes a power supply VCC, a first filter, a second comparison circuit, a second level conversion circuit, an or gate Q4, a second fault logic circuit, a first resistor R1, a second resistor R2, a third resistor R3, a first voltage comparator Q1, a second voltage comparator Q2, a diode D1, and an NMOS transistor Q3, wherein the input terminals of the first filter and the second filter are connected to the over-current protection circuit, the output terminal of the first filter is connected to the input terminal of the second comparison circuit, the output terminal of the second comparison circuit is connected to the input terminal of the second level conversion circuit, the output terminal of the second level conversion circuit is connected to the first input terminal of the or gate Q4, the output terminal of the or gate Q4 is connected to the second fault logic control circuit, the second filter is simultaneously connected to the first terminal of the first resistor R1, the first terminal of the first voltage comparator Q1, the input terminal of the second voltage comparator Q1, the second terminal of the second voltage comparator Q2 is connected to the second terminal of the second comparator Q2, the output terminal of the second voltage comparator Q2 is connected to the second terminal of the second resistor Q2, the second terminal of the second comparator is connected to the second terminal of the second resistor Q2, the second terminal of the second resistor Q2 is connected to the second terminal of the second resistor Q2, the second terminal of the second resistor is connected to the second Q1, and the output terminal of the second resistor is connected to the second terminal of the second resistor Q1.
Compared with the related art, the high-voltage integrated circuit comprises a power circuit, an overcurrent protection circuit, an overtemperature protection circuit, an error reporting circuit and a driving circuit; the first input end of the overcurrent protection circuit is used for receiving an external ITRIP signal, the second input end of the overcurrent protection circuit is connected with the output end of the overtemperature protection circuit, the first output end of the overcurrent protection circuit is connected with the input end of the error reporting circuit, the second output end of the overcurrent protection circuit is connected with the input end of the driving circuit, the first output end of the error reporting circuit is connected with the control end of the driving circuit, the second output end of the error reporting circuit is connected with an external processor, the power supply end of the driving circuit is connected with the output end of the power supply circuit, the output end of the driving circuit is connected with an external switch tube, and the error reporting circuit is used for judging whether the ITRIP signal received by the input end of the overcurrent protection circuit is an error signal or not, if yes, the error signal is transmitted to the driving circuit, and the driving circuit drives the external switch tube according to the signal output by the error reporting circuit. Through the arrangement of the structure, the overcurrent protection trigger threshold is fixed below the low temperature (such as 100 ℃) of the high-voltage integrated circuit, when the temperature is higher than (100 ℃), the overcurrent protection trigger threshold is determined by the temperature, and the higher the temperature is, the smaller the overcurrent protection threshold is, so that the power device driven by the high-voltage integrated circuit is beneficial to avoiding the condition that the overcurrent happens too early at the high temperature, and the long-term working reliability of the product is improved.
Drawings
The present invention will be described in detail with reference to the accompanying drawings. The foregoing and other aspects of the invention will become more apparent and more readily appreciated from the following detailed description taken in conjunction with the accompanying drawings. In the accompanying drawings:
FIG. 1 is a schematic block diagram of a high voltage integrated circuit according to the present invention;
FIG. 2 is a circuit diagram of a high voltage integrated circuit according to the present invention;
fig. 3 is a schematic circuit diagram of an over-temperature protection circuit according to the present invention.
Detailed Description
The following describes in detail the embodiments of the present invention with reference to the drawings.
The detailed description/examples set forth herein are specific embodiments of the invention and are intended to illustrate the concepts of the invention, and are intended to be illustrative and exemplary, and are not to be construed as limiting the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to adopt other obvious solutions based on the disclosure of the claims and specification of the present application, including those adopting any obvious substitutions and modifications to the embodiments described herein, all within the scope of the present invention.
Referring to fig. 1-3, the present invention provides a high voltage integrated circuit 100, which includes a power circuit 1, an over-current protection circuit 2, an over-temperature protection circuit 3, an error reporting circuit 4 and a driving circuit 5; the first input end of the overcurrent protection circuit 2 is used for receiving an external ITRIP signal, the second input end of the overcurrent protection circuit 2 is connected with the output end of the overtemperature protection circuit 3, the first output end of the overcurrent protection circuit 2 is connected with the input end of the error reporting circuit 4, the second output end of the overcurrent protection circuit 2 is connected with the input end of the driving circuit 5, the first output end of the error reporting circuit 4 is connected with the control end of the driving circuit 5, the second output end of the error reporting circuit 4 is connected with the output end of the power circuit 1 by a processor connected with the outside, the power supply end of the driving circuit 5 is connected with an external switching tube, and the error reporting circuit 4 is used for judging whether the ITRIP signal received by the input end of the overcurrent protection circuit 2 is an error signal or not, if yes, the error signal is transmitted to the driving circuit 5, and the driving circuit 5 drives the switching tube according to the error reporting signal output by the driving circuit 4.
Through the arrangement of the structure, the overcurrent protection trigger threshold is fixed below the low temperature (such as 100 ℃) of the high-voltage integrated circuit 100, when the temperature is higher than (100 ℃), the overcurrent protection trigger threshold is determined by the temperature, the higher the temperature is, the smaller the overcurrent protection threshold is, and the power device driven by the high-voltage integrated circuit is beneficial to avoiding the condition that the overcurrent happens too early at the high temperature, so that the long-term working reliability of the product is improved.
Specifically, the driving circuit 5 includes a high-side driving circuit 501, an interlocking circuit 502, and a low-side driving circuit 503, and the high-side driving circuit 501 is electrically connected to the low-side driving circuit 503 through the interlocking circuit 502. Further, the high-side driving circuit 501 includes a bootstrap circuit 501a and a high-side undervoltage protection circuit 502b, where a power supply end of the bootstrap circuit 501a is connected to an output end of the power supply circuit 1.
In order to further improve the reliability of the high-voltage integrated circuit, in this embodiment, the high-voltage integrated circuit further includes a power supply under-voltage protection circuit 6, an enable circuit 7, and an over-voltage protection circuit 8, which are used for detecting various operating signals of the high-voltage integrated circuit 100.
Further, the overcurrent protection circuit 2 includes an action current detection signal input end 201, a filter circuit 202, a comparison circuit 203, a level conversion circuit 204, a FAULT logic control circuit 205 and a FAULT NMOS device 206, where the action current detection signal input end 201 is connected to the input end of the filter circuit 202, the output end of the filter circuit 202 is connected to the input end of the comparison circuit 203, the output end of the comparison circuit 203 is connected to the input end of the level conversion circuit 204, the output end of the level conversion circuit 204 is connected to the input end of the FAULT logic control circuit 205, and the output end of the FAULT logic control circuit 205 is connected to the FAULT NMOS device 206.
In this embodiment, the filter circuit 202 is mainly configured to filter the detected ITRIP voltage, compare the detected ITRIP voltage with the comparison circuit 203, perform level conversion with the level conversion circuit 204 when the ITRIP voltage reaches the trigger value of the comparison circuit 203, perform waveform correction again to output a FAULT signal, the FAULT logic control circuit 205 receives the ITRIP signal, the Enable outputs a high level signal and a fault_g high level signal, the Enable high level signal controls the switch of each channel, and when the Enable is high level, the driving signal is locked no matter in the high level or the low level, and the corresponding signal output terminal outputs a low level signal. Meanwhile, the fault_g high level signal drives the FAULT NMOS device 206 to turn on, outputs a low level signal via the FAULT, and the external MCU detects the FAULT low level signal and triggers the FAULT protection, and the driving signal of each channel is set to a low level for FAULT protection.
It is mentioned that the over-temperature protection circuit 3 includes a power supply VCC, a first filter 301, a second filter 302, a second comparison circuit 303, a second level conversion circuit 304, an or gate Q4, a second fault logic circuit 305, a first resistor R1, a second resistor R2, a third resistor R3, a first voltage comparator Q1, a second voltage comparator Q2, a diode D1, and an NMOS transistor Q3, the input terminals of the first filter 301 and the second filter 302 are connected to the over-current protection circuit 2, the output terminal of the first filter 301 is connected to the input terminal of the second comparison circuit 303, the output terminal of the second comparison circuit 303 is connected to the first input terminal of the or gate Q4, the output terminal of the or gate Q4 is connected to the second fault logic circuit 305, the output terminal of the second filter 302 is simultaneously connected to the first resistor R1, the second terminal of the second resistor Q2 is connected to the second terminal of the second resistor Q1, the second terminal of the second resistor Q2 is connected to the positive terminal of the second resistor Q2, the output terminal of the second resistor Q2 is connected to the negative terminal of the second resistor Q1, the second terminal of the second resistor Q2 is connected to the positive terminal of the second resistor Q2, the output terminal of the second Q2 is connected to the second Q2, the output terminal of the second Q2 is connected to the positive terminal of the second resistor Q1 and the second terminal of the second resistor Q2 is connected to the second output terminal of the second Q2, and the output terminal of the second Q2 is connected to the second output terminal of the second Q2 of the second resistor Q2, the source electrode of the NMOS tube Q3 is grounded.
The first resistor R1, the diode D1, and the first comparator Q1 are temperature detection circuits, and as the temperature increases, the voltage across the diode D1 decreases by 2mV according to the characteristic that the diode increases by 1 ℃ with the temperature, and the higher the temperature, i.e., the lower the V2 voltage. According to application requirements, the first comparator Q1 for designing the ITRIP temperature control circuit can be designed to continuously output a low level in a 100 ℃ environment, the positive electrode and the negative electrode of the second comparator Q2 are used for detecting voltages of V3 and V2, when the temperature is lower than 100 ℃, V2 is higher than V3, the second comparator Q2 outputs a high voltage, the NMOS tube Q3 is turned on, when the temperature is higher than 100 ℃, V2 is lower than V3, the second comparator Q2 outputs a low voltage, and the NMOS tube Q3 is turned off. I.e. when the high voltage integrated circuit temperature is greater than 100 degrees celsius, a fault signal can be output to the overcurrent protection circuit 3. When the temperature of the high-voltage integrated circuit is higher than 100 ℃, the voltage V1 connected with the overcurrent protection circuit 3 is higher than the voltage V2, the first comparator Q1 outputs a high level, and as the temperature rises and the value V2 decreases, the lower the ITRIP voltage value triggering the first comparator Q1 to output the high level is, the high level signal output by the first comparator Q1 outputs a high level signal through the OR gate Q4.
Compared with the related art, the high-voltage integrated circuit comprises a power circuit, an overcurrent protection circuit, an overtemperature protection circuit, an error reporting circuit and a driving circuit; the first input end of the overcurrent protection circuit is used for receiving an external ITRIP signal, the second input end of the overcurrent protection circuit is connected with the output end of the overtemperature protection circuit, the first output end of the overcurrent protection circuit is connected with the input end of the error reporting circuit, the second output end of the overcurrent protection circuit is connected with the input end of the driving circuit, the first output end of the error reporting circuit is connected with the control end of the driving circuit, the second output end of the error reporting circuit is connected with an external processor, the power supply end of the driving circuit is connected with the output end of the power supply circuit, the output end of the driving circuit is connected with an external switch tube, and the error reporting circuit is used for judging whether the ITRIP signal received by the input end of the overcurrent protection circuit is an error signal or not, if yes, the error signal is transmitted to the driving circuit, and the driving circuit drives the external switch tube according to the signal output by the error reporting circuit. Through the arrangement of the structure, the overcurrent protection trigger threshold is fixed below the low temperature (such as 100 ℃) of the high-voltage integrated circuit, when the temperature is higher than (100 ℃), the overcurrent protection trigger threshold is determined by the temperature, and the higher the temperature is, the smaller the overcurrent protection threshold is, so that the power device driven by the high-voltage integrated circuit is beneficial to avoiding the condition that the overcurrent happens too early at the high temperature, and the long-term working reliability of the product is improved.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any such modifications, equivalents, and improvements that fall within the spirit and principles of the present invention are intended to be covered by the following claims.

Claims (7)

1. The high-voltage integrated circuit is characterized by comprising a power supply circuit, an overcurrent protection circuit, an overtemperature protection circuit, an error reporting circuit and a driving circuit; the first input end of the overcurrent protection circuit is used for receiving an external ITRIP signal, the second input end of the overcurrent protection circuit is connected with the output end of the overtemperature protection circuit, the first output end of the overcurrent protection circuit is connected with the input end of the error reporting circuit, the second output end of the overcurrent protection circuit is connected with the input end of the driving circuit, the first output end of the error reporting circuit is connected with the control end of the driving circuit, the second output end of the error reporting circuit is connected with an external processor, the power supply end of the driving circuit is connected with the output end of the power supply circuit, the output end of the driving circuit is connected with an external switch tube, and the error reporting circuit is used for judging whether the ITRIP signal received by the input end of the overcurrent protection circuit is an error signal or not, if yes, the error signal is transmitted to the driving circuit, and the driving circuit drives the external switch tube according to the signal output by the error reporting circuit.
2. The high voltage integrated circuit of claim 1, wherein the drive circuit comprises a high side drive circuit, an interlock circuit, and a low side drive circuit, the high side drive circuit being electrically connected to the low side drive circuit through the interlock circuit.
3. The high voltage integrated circuit of claim 2, further comprising an enable circuit and an overvoltage protection circuit.
4. The high voltage integrated circuit of claim 2, wherein the high side drive circuit comprises a bootstrap circuit and a high side under-voltage protection circuit, a power supply terminal of the bootstrap circuit being connected to an output terminal of the power supply circuit.
5. The high voltage integrated circuit of claim 1, further comprising an under-voltage power supply protection circuit electrically connected to the power supply circuit.
6. The high voltage integrated circuit of claim 1, wherein the over-current protection circuit comprises an action current detection signal input terminal, a filter circuit, a comparison circuit, a level conversion circuit, a FAULT logic control circuit and a FAULT NMOS device, the action current detection signal input terminal is connected with the input terminal of the filter circuit, the output terminal of the filter circuit is connected with the input terminal of the comparison circuit, the output terminal of the comparison circuit is connected with the input terminal of the level conversion circuit, the output terminal of the level conversion circuit is connected with the input terminal of the FAULT logic control circuit, and the output terminal of the FAULT logic control circuit is connected with the FAULT NMOS device.
7. The high voltage integrated circuit of claim 1, wherein the over-temperature circuit comprises a power supply VCC, a first filter, a second comparison circuit, a second level conversion circuit, an OR gate Q4, a second fault logic circuit, a first resistor R1, a second resistor R2, a third resistor R3, a first voltage comparator Q1, a second voltage comparator Q2, a diode D1, and an NMOS transistor Q3, wherein the inputs of the first filter and the second filter are connected with the over-current protection circuit, the output of the first filter is connected with the input of the second comparison circuit, the output of the second comparison circuit is connected with the input of the second level conversion circuit, the output of the second level conversion circuit is connected with the first input of the OR gate Q4, the output of the OR gate Q4 is connected with the second fault logic control circuit, the second filter is connected with the first end of the first resistor R1, the positive end of the first voltage comparator Q1, the negative end of the first voltage comparator Q1, the positive end of the second voltage comparator Q2 and the positive end of the diode D1, the output end of the first voltage comparator Q1 is connected with the second input end of the OR gate Q4 and the drain electrode of the NMOS tube Q3, the negative end of the diode D1 is grounded, the second end of the first resistor R1 is connected with the power supply VCC and the first end of the second resistor R2, the second end of the second resistor R2 is connected with the positive end of the second voltage comparator Q2, the negative end of the second voltage comparator Q2 and the first end of the third resistor R3, the second end of the third resistor R3 is grounded, the output end of the second voltage comparator Q2 is connected with the gate electrode of the NMOS tube Q3, the source electrode of the NMOS tube Q3 is grounded.
CN202310400545.0A 2023-04-14 2023-04-14 High-voltage integrated circuit Pending CN116488438A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310400545.0A CN116488438A (en) 2023-04-14 2023-04-14 High-voltage integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310400545.0A CN116488438A (en) 2023-04-14 2023-04-14 High-voltage integrated circuit

Publications (1)

Publication Number Publication Date
CN116488438A true CN116488438A (en) 2023-07-25

Family

ID=87214901

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310400545.0A Pending CN116488438A (en) 2023-04-14 2023-04-14 High-voltage integrated circuit

Country Status (1)

Country Link
CN (1) CN116488438A (en)

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