CN116487286A - Detection device and detection method for metal ion pollutants - Google Patents
Detection device and detection method for metal ion pollutants Download PDFInfo
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- CN116487286A CN116487286A CN202210043680.XA CN202210043680A CN116487286A CN 116487286 A CN116487286 A CN 116487286A CN 202210043680 A CN202210043680 A CN 202210043680A CN 116487286 A CN116487286 A CN 116487286A
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- 229910021645 metal ion Inorganic materials 0.000 title claims abstract description 294
- 238000001514 detection method Methods 0.000 title claims abstract description 145
- 239000003344 environmental pollutant Substances 0.000 title claims abstract description 115
- 231100000719 pollutant Toxicity 0.000 title claims abstract description 115
- 239000000356 contaminant Substances 0.000 claims abstract description 102
- 230000003068 static effect Effects 0.000 claims abstract description 49
- 238000000605 extraction Methods 0.000 claims abstract description 42
- 230000005611 electricity Effects 0.000 claims abstract description 40
- 238000007405 data analysis Methods 0.000 claims abstract description 24
- 239000007788 liquid Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 27
- 238000004140 cleaning Methods 0.000 claims description 27
- 239000000243 solution Substances 0.000 claims description 27
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 25
- 238000000354 decomposition reaction Methods 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 16
- 230000002159 abnormal effect Effects 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 9
- 238000004364 calculation method Methods 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- 230000005484 gravity Effects 0.000 claims description 5
- 238000013102 re-test Methods 0.000 claims description 3
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- 238000010168 coupling process Methods 0.000 claims description 2
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- 238000011084 recovery Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000012864 cross contamination Methods 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 229910001385 heavy metal Inorganic materials 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
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- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 229910006160 GeF4 Inorganic materials 0.000 description 1
- 241000282412 Homo Species 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000012491 analyte Substances 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PPMWWXLUCOODDK-UHFFFAOYSA-N tetrafluorogermane Chemical compound F[Ge](F)(F)F PPMWWXLUCOODDK-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000004846 x-ray emission Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
The present disclosure relates to a detection apparatus and a detection method of metal ion contaminants, wherein the detection apparatus of metal ion contaminants includes: the collecting device comprises a wafer supporting platform and a wafer, wherein the wafer can be positioned on the wafer supporting platform, the wafer supporting platform can provide static electricity for the wafer, and the wafer can collect the metal ion pollutants; the detection device comprises an extraction component and a quantitative detection device, wherein the extraction component is used for extracting metal ion pollutants collected on the surface of the wafer; and the data analysis device is connected with the quantitative detection device and is used for analyzing the quantitative data of the metal ion pollutants detected by the quantitative detection device and giving out the detection result of the metal ion pollutants. The detection device can accurately and quantitatively detect the metal ion pollutants in the environment.
Description
Technical Field
The disclosure relates to the technical field of semiconductor manufacturing, and in particular relates to a detection device and a detection method for metal ion pollutants.
Background
Currently, metal ion contamination is becoming an increasingly interesting issue in the field of semiconductor manufacturing as the complexity of the semiconductor industry process increases and the feature size of the product continues to shrink.
However, there are no detection apparatuses and detection methods for metal ion contaminants suitable for use in the semiconductor field in the known prior art. In addition, the existing detection device and detection method for the metal ion pollutants in the atmosphere environment have the problems of metal ion enrichment efficiency, recovery rate and cross contamination, and cannot meet the detection requirements of the metal ion pollutants in the semiconductor field.
It should be noted that the information disclosed in the above background section is only for enhancing understanding of the background of the present disclosure and thus may include information that does not constitute prior art known to those of ordinary skill in the art.
Disclosure of Invention
The present disclosure aims to overcome the shortcomings of the prior art, and provide a device and a method for detecting metal ion pollutants, which can accurately and quantitatively detect metal pollutant ions in the environment.
In one aspect, the present disclosure provides a detection apparatus for metal ion contaminants, comprising:
The collecting device comprises a wafer supporting platform and a wafer, wherein the wafer can be positioned on the wafer supporting platform, the wafer supporting platform can provide static electricity for the wafer, and the wafer can collect the metal ion pollutants;
the detection device comprises an extraction component and a quantitative detection device, wherein the extraction component is used for extracting metal ion pollutants collected on the surface of the wafer;
and the data analysis device is connected with the quantitative detection device and is used for analyzing the quantitative data of the metal ion pollutants detected by the quantitative detection device and giving out the detection result of the metal ion pollutants.
In one exemplary embodiment of the present disclosure, the wafer support platform includes:
a support part;
the wafer support column group is provided with at least one wafer support column, the wafer support column is positioned on the surface of one side of the support part and extends in the direction away from the support part, the wafer can be positioned on the wafer support column, the wafer support column is provided with a containing cavity, an opening is arranged on one side of the wafer support column away from the support part, and the opening is communicated with the containing cavity;
And the electrostatic generator is arranged in the accommodating cavity, and the wafer can be contacted with the electrostatic generator through the opening.
In one exemplary embodiment of the present disclosure, the electrostatic generator includes:
the static generator body is positioned in the accommodating cavity;
the electrostatic generator switch is located the electrostatic generator body is kept away from the one end of supporting part, and with electrostatic generator body coupling, the electrostatic generator switch is kept away from the one end of electrostatic generator body passes the opening and to keeping away from the direction of supporting part extends, the wafer can with the electrostatic generator switch is kept away from the one end contact of electrostatic generator body, just the electrostatic generator can be to be close to or keep away from the direction motion of electrostatic generator body.
In an exemplary embodiment of the disclosure, the wafer support column group has three wafer support columns, and the included angles between any two wafer support columns are the same;
the wafer support platform is provided with three static generators, and each static generator is positioned in the accommodating cavity of one wafer support column.
In one exemplary embodiment of the present disclosure, the support part includes:
A support base;
the support platform is located on the support seat, and the support platform can move along the direction away from or close to the support seat, the wafer support column is located the support platform is away from one side of the support seat.
In one exemplary embodiment of the present disclosure, the extraction assembly includes:
the silicon oxide decomposition device comprises a sealing chamber and a silicon oxide decomposition liquid injection device, wherein the silicon oxide decomposition liquid injection device is connected with the sealing chamber and can inject steam of the silicon oxide decomposition liquid into the sealing chamber;
the extraction device comprises a suction nozzle and a collecting container, wherein the suction nozzle can adsorb the metal ion dissolving liquid and enable the metal ion dissolving liquid to move on the surface of the wafer.
In one exemplary embodiment of the present disclosure, the detection apparatus for metal ion contaminants further includes:
and the wafer cleaning device is used for cleaning the wafer so that the metal ion concentration on the surface of the wafer is smaller than or equal to a first threshold value.
In one exemplary embodiment of the present disclosure, the detection apparatus for metal ion contaminants further includes:
And the moving device is used for transferring the wafer from the wafer cleaning device to the wafer supporting platform and transferring the wafer from the wafer supporting platform into the sealing cavity.
In one exemplary embodiment of the present disclosure, the detection apparatus for metal ion contaminants further includes:
the early warning device is connected with the data analysis device, and can analyze the detection result of the metal ion pollutants and send out warning information when the detection result of the metal ion pollutants is abnormal.
Another aspect of the present disclosure provides a method for detecting a metal ion contaminant, where the method for detecting a metal ion contaminant uses the apparatus for detecting a metal ion contaminant described in any one of the above, and the method for detecting a metal ion contaminant includes:
placing a wafer supporting platform in a space to be detected, placing the wafer on the wafer supporting platform, and providing static electricity for the wafer by utilizing the wafer supporting platform so as to collect the metal ion pollutants by utilizing the wafer;
extracting the metal ion pollutants collected on the surface of the wafer by using an extraction component, and quantitatively analyzing the extracted metal ion pollutants by using a quantitative detection device so as to obtain quantitative data of the metal ion pollutants;
And analyzing the quantitative data of the metal ion pollutants by using a data analysis device, and giving out the detection result of the metal ion pollutants.
In one exemplary embodiment of the disclosure, the placing the wafer support platform in the space to be inspected and placing the wafer on the wafer support platform, using the wafer support platform to provide static electricity to the wafer to collect the metal ion contaminants using the wafer includes:
setting acquisition time;
placing a wafer support platform in a space to be detected;
placing the wafer on a wafer support column and contacting the wafer with an electrostatic generator through an opening of the wafer support column to provide static electricity to the wafer through the electrostatic generator;
and utilizing static electricity on the wafer to enable the metal particle pollutants to be adsorbed on the surface of the wafer, and completing the collection of the metal ion pollutants after the collection time.
In one exemplary embodiment of the present disclosure, the contacting the wafer with an electrostatic generator through an opening of the wafer support column to provide static electricity to the wafer through the electrostatic generator includes:
Placing the wafer at one end of the electrostatic generator switch far away from the electrostatic generator body, and utilizing the gravity of the wafer to enable the electrostatic generator switch to move towards the direction close to the electrostatic generator body so as to open the electrostatic generator body;
and generating static electricity by using the static electricity generator body, and providing the static electricity to the wafer through the static electricity generator switch.
In an exemplary embodiment of the present disclosure, the placing the wafer support platform in the space to be inspected includes:
placing a supporting seat in the space to be detected;
and moving a supporting platform according to the diffusion height of the metal ion pollutants in the space to be detected, so that the supporting platform moves towards a direction close to or far away from the supporting seat, and the supporting platform reaches the diffusion position of the metal ion pollutants.
In an exemplary embodiment of the present disclosure, the extracting the metal ion contaminants collected on the wafer surface using an extracting component includes:
placing the wafer after collecting the metal ion pollutants in a sealed cavity, and injecting steam of a silicon oxide decomposition liquid into the sealed cavity by utilizing a silicon oxide decomposition liquid injection device;
Dropping a fixed volume of metal ion dissolving liquid on the wafer, adsorbing the metal ion dissolving liquid by using a suction nozzle, and moving the suction nozzle to enable the metal ion dissolving liquid to move on the surface of the wafer so as to adsorb metal ion pollutants collected on the surface of the wafer and form an extraction solution;
the extraction solution is placed in a collection container.
In an exemplary embodiment of the present disclosure, the quantitatively analyzing the extracted metal ion contaminants with a quantitative detection device to obtain quantitative data of metal ion contaminants includes:
introducing the extraction solution in the collection container into the quantitative detection device;
and detecting the concentration of the metal ion pollutants in the extracting solution by using the quantitative detection device so as to obtain quantitative data of the metal ion pollutants.
In an exemplary embodiment of the present disclosure, the analyzing quantitative data of the metal ion contaminant using a data analysis device and giving a detection result of the metal ion contaminant includes:
inputting quantitative data of the metal ion contaminants into the data analysis device;
And converting quantitative data of the metal ion pollutants into the quantity of the metal pollutants generated per hour in each square meter in the space to be detected by using the metal ion content calculation formula through the data analysis device so as to obtain a detection result of the metal ion pollutants.
Wherein, the metal ion content calculation formula is:
wherein, C is the quantity of metal pollutants generated per square meter in each hour in the space to be detected; m is the concentration of the metal ion contaminant; volume is the Volume of the extraction solution; n (N) A Is an avogalileo constant; the Atomic Mass is the relative molecular Mass of the metal ion contaminant; area is the Area of the wafer; and t is the acquisition time.
In an exemplary embodiment of the present disclosure, before the placing the wafer on the wafer support platform, the method for detecting metal ion contaminants further includes:
setting a first threshold;
cleaning the wafer by using a wafer cleaning device;
acquiring the concentration of metal ions on the cleaned wafer by using the quantitative detection device;
analyzing the metal ion concentration through the data analysis device, and judging that the wafer is clean when the metal ion concentration is smaller than or equal to the first threshold value, wherein the wafer can be placed on the wafer support platform; and judging that the wafer is not cleaned when the metal ion concentration is larger than the first threshold value, and cleaning the wafer again.
In one exemplary embodiment of the present disclosure, the placing the wafer on a wafer support post includes: transferring the wafer from the wafer cleaning device to the wafer support column by using a mechanical arm;
the wafer after collecting the metal ion pollutants is placed in a sealed cavity, and the method comprises the following steps: and transferring the wafer from the wafer support platform into the sealed cavity by using a mechanical arm.
In an exemplary embodiment of the present disclosure, after the giving of the detection result of the metal ion contaminant, the detection method of the metal ion contaminant further includes:
setting a second threshold;
inputting the detection result of the metal ion pollutants into an early warning device;
judging the detection result by using the early warning device, and judging that the detection result is abnormal when the number of metal pollutants generated per hour in each square meter in the space to be detected is greater than the second threshold value; when the number of metal pollutants generated per hour in each square meter in the space to be detected is smaller than or equal to the second threshold value, judging that the detection result is normal;
and after the early warning device judges that the detection result is abnormal, the early warning device sends out alarm information.
In an exemplary embodiment of the disclosure, after the early warning device sends out the alarm information, the method for detecting the metal ion contaminant further includes:
and starting an emergency retest program to retest the metal ion pollutants in the space to be detected.
The technical scheme provided by the disclosure can achieve the following beneficial effects:
the detection device of the metal ion pollutants provided by the disclosure comprises a collection device, a detection device and a data analysis device. The detection device for the metal ion pollutants can timely find out the content abnormality of the metal ions in the environment, so that operators can process the metal ions in the environment as soon as possible, and the abnormal probability of manufactured semiconductor products is reduced.
The collecting device comprises a wafer supporting platform and a wafer. Therefore, the method and the device can collect the metal ion pollutants in the environment through the wafer, so that the pollution degree of the semiconductor possibly subjected to the metal ions in the environment in the manufacturing process can be more accurately simulated, and further, the measurement result of the metal ion pollutants is ensured to be more suitable for the field of semiconductor manufacturing.
Meanwhile, the wafer supporting platform provides static electricity for the wafer, so that the capability of enriching the metal ion pollutants for the wafer can be improved, the metal ion enrichment rate of the metal ion pollutant detection device can be improved, and further the quantitative detection precision of the metal ion pollutants can be improved, so that the detection requirement of the metal ion pollutants in the technical field of semiconductor manufacturing can be met.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description, serve to explain the principles of the disclosure. It will be apparent to those of ordinary skill in the art that the drawings in the following description are merely examples of the disclosure and that other drawings may be derived from them without undue effort.
FIG. 1 illustrates a schematic block diagram of an exemplary metal ion contaminant detection device according to the present disclosure;
FIG. 2 illustrates a schematic diagram of an exemplary acquisition device according to the present disclosure;
FIG. 3 illustrates a schematic structural view of an exemplary wafer support platform according to the present disclosure at a first perspective;
FIG. 4 illustrates a schematic structural view of an exemplary wafer support platform according to the present disclosure at a second view angle
Fig. 5 illustrates a flow diagram of an exemplary method of detecting metal ion contaminants in accordance with the present disclosure.
Reference numerals illustrate:
1. a detection device for metal ion pollutants; 2. a collection device; 3. a detection device; 4. a data analysis device; 5. a wafer cleaning device; 6. a mobile device; 7. an early warning device; 21. a wafer support platform; 22. a wafer; 211. a support part; 212. a wafer support column; 213. an electrostatic generator; 2111. a support base; 2112. and supporting the platform.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. However, the exemplary embodiments can be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus detailed descriptions thereof will be omitted.
Furthermore, in the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the present disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details.
The terms "a," "an," "the," "said" and "at least one" are used to indicate the presence of one or more elements/components/etc.; the terms "comprising" and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. in addition to the listed elements/components/etc.
With the increasing complexity of semiconductor manufacturing processes and the ever shrinking feature sizes of semiconductor products, metal ion contamination is becoming an increasingly important concern in semiconductor manufacturing processes. In the field of semiconductor manufacturing technology, metal ion contaminants existing in a manufacturing environment affect performance of a manufactured semiconductor product, and the metal ion contaminants contained in the semiconductor product may eventually cause degradation of electrical performance and reliability of the semiconductor product due to reduction of dielectric breakdown voltage and the like. Also, different metal ion contaminants can cause different defects in semiconductor products. Such as: alkali and alkaline earth metal ion contamination can lead to reduced device breakdown voltages, where alkali and alkaline earth metals can include, but are not limited to: na, K, ca, ma, ba; contamination with transition metal or heavy metal ions may shorten the reliability life of the component, where the transition metal or heavy metal may include, but is not limited to: fe. Cr, ni, cu, zn, mn.
Therefore, to avoid the above effects, it is necessary to monitor the metal ion contaminant content in the environment in which the semiconductor manufacturing process is being performed. The environment in which the semiconductor manufacturing process is performed may be, but is not limited to, a clean room. In semiconductor manufacturing processes, some processes use a number of raw materials containing high concentrations of metal ions, such as: gases such as WF6, asH3, and GeF4, metal targets such as Ti, W, co, ta, cu, and chemical liquids such as copper sulfate. To monitor whether these high concentration metal ion containing source materials diffuse into the nearby environment during use or during equipment maintenance (PM) has an impact on other manufacturing processes, it is necessary to quantitatively detect the metal ion contaminant content in the environment of the semiconductor manufacturing area.
However, the inventors of the present disclosure have found that, in the field of semiconductor manufacturing technology, environmental contaminant detection schemes are currently all schemes for detecting the content of heavy metals harmful to humans, and have not been specifically directed to a technical scheme for detecting metal ion contaminants in a semiconductor manufacturing environment. In addition, in the scheme for detecting the content of heavy metals harmful to human, only metal ions harmful to human bodies are concerned, and the problem of cross contamination among certain metal elements is not considered. Meanwhile, the content of metal ions detected by these schemes is generally in the ppm level, and the content of metal ion contaminants required in the process of semiconductor fabrication is in the ppt level. Therefore, none of the current inspection schemes are suitable for the requirements of inspecting the environment in which the semiconductor is manufactured.
In addition, the inventors of the present disclosure found that in other fields, the method for detecting metal ions in the atmospheric environment is to sample by filtration, enrichment and adsorption through a filter membrane, and then desorb or elute the metal analyte from the filter membrane to obtain a sample, and take the sample to a laboratory for analysis. Laboratory analysis equipment is typically a spectrophotometer; the analytical methods employed are generally: atomic absorption spectrometry, inductively coupled plasma spectrometry, X-ray fluorescence spectrometry, and the like. By adopting the mode, the problems of low enrichment efficiency, low recovery rate in the desorption and elution processes, cross contamination among different metal ions and the like exist in the sampling process. Meanwhile, the analysis equipment adopted by the method cannot meet the requirements of the field of semiconductor manufacturing. In addition, the method needs to perform laboratory offline sampling analysis and detection, the required labor is long, and the feedback speed for processing the metal ion abnormality in the environment is low.
Therefore, the inventor of the present disclosure has earnestly studied and spent great creative labor aiming at the technical problems found by the above-mentioned inventors, and finally, the present invention provides a detection device for metal ion pollutants. The detection device for the metal ion pollutants is not only suitable for detecting the metal ion pollutants in the environment where the semiconductor manufacturing is located, but also can detect the metal ion pollutants in other environments. In addition, the monitoring device for the metal ion pollutants can accurately and quantitatively detect the metal ion pollutants in the environment
As shown in fig. 1, the detection device 1 for metal ion contaminants may include: acquisition device 2, detection device 3 and data analysis device 4.
As shown in fig. 2, the collection device 2 may include a wafer support platform 21 and a wafer 22. Wherein the wafer 22 can be positioned on the wafer support platform 21 and metal contaminant ions can be collected, and the wafer support platform 21 can provide static electricity to the wafer 22.
Therefore, the wafer 22 and the wafer supporting platform 21 are utilized as the collecting device 2, and the metal ion pollutants in the environment can be collected through the wafer 22, so that the pollution degree of the semiconductor possibly polluted by the metal ions in the environment in the manufacturing process can be more accurately simulated, and the measurement result of the metal ion pollutants is more suitable for the field of semiconductor manufacturing.
Meanwhile, the wafer supporting platform 21 provides static electricity for the wafer 22, so that the capability of the wafer 22 for enriching the metal ion pollutants can be improved, the metal ion enrichment rate of the metal ion pollutant detection device 1 can be improved, and the quantitative detection precision of the metal ion pollutants can be improved, so that the detection requirement of the semiconductor manufacturing technical field on the metal ion pollutants can be met.
In one embodiment of the present disclosure, as shown in fig. 2-4, the wafer support platform 21 may comprise: a support 211, a wafer support column set, and an electrostatic generator 213. The wafer support column group may have at least one wafer support column 212, which may be located on a surface of one side of the support portion 211 and extend in a direction away from the support portion 211. The wafer 22 may be located on the wafer support post 212, and it is understood that the wafer 22 may be located on a surface of the wafer support post 212 on a side away from the support portion 211, so as to support the wafer 22 by the wafer support post 212. The length of the wafer support column 212 extending in the direction away from the support portion 211 is not limited in the present disclosure, and may be set according to actual needs, which is within the scope of the present disclosure.
In one embodiment of the present disclosure, the cross-sectional shape of the wafer support post 212 may be circular, but is not limited thereto, and the cross-sectional shape of the wafer support post 212 may also be rectangular or triangular, etc., and may be selected according to actual needs, which is within the scope of the present disclosure.
The wafer support column 212 may have a receiving cavity, and an opening is disposed on a side of the wafer support column 212 away from the support portion 211, and the opening may be in communication with the receiving cavity. It will be appreciated that the receiving chamber may be accessed through an opening. The electrostatic generator 213 may be installed in the accommodating chamber, and the wafer 22 may be in contact with the electrostatic generator 213 through the opening. The electrostatic generator 213 may generate and provide static electricity to the wafer 22.
In one embodiment of the present disclosure, the electrostatic generator 213 may include: an electrostatic generator body and an electrostatic generator switch. The static electricity generator body is used for generating static electricity, and the static electricity generator body can be positioned in the accommodating cavity.
The static electricity generator switch may be located at an end of the static electricity generator body remote from the supporting portion 211, and the static electricity generator switch may be connected with the static electricity generator body. The end of the electrostatic generator switch remote from the electrostatic generator 213 may pass through the opening of the wafer support post 212 and extend away from the support 211.
The wafer 22 can be in contact with an end of the electrostatic generator switch that is remote from the electrostatic generator body, and the electrostatic generator switch can be moved in a direction toward or away from the electrostatic generator body. When the electrostatic generator switch moves in a direction approaching the electrostatic generator body, the electrostatic generator body can be opened, so that the electrostatic generator body discharges and is conducted to the wafer 22 positioned on the electrostatic generator switch through the electrostatic generator switch; when the static generator switch moves in a direction away from the static generator body, the static generator body can be closed, so that the static generator body stops discharging.
Namely: when the wafer 22 is placed on the wafer support column 212, the electrostatic generator switch can be moved to a direction approaching to the electrostatic generator body due to the gravity of the wafer 22 so as to enable the electrostatic generator body to discharge static electricity; after the wafer 22 is removed from the wafer support column 212, the electrostatic generator switch is not acted by the gravity of the wafer 22, so that the electrostatic generator 213 can move away from the electrostatic generator body, and the electrostatic generator is stopped generating the static electricity.
In one embodiment of the present disclosure, the set of wafer support columns may have three wafer support columns 212, with the same included angle between any two wafer support columns 212. For example, the angle between any two wafer support posts 212 may be 120 °, but is not limited thereto.
In addition, the wafer support platform 21 may have three electrostatic generators 213, each electrostatic generator 213 may be located within a receiving cavity of one wafer support column 212.
However, the number of wafer support columns 212 in the wafer support column group is not limited thereto, and may be other numbers, such as: four, five, etc., the number of electrostatic generators 213 in the wafer support platform 21 may be other numbers, such as: four, five, etc. Also, the number of wafer support columns 212 may be different from the number of electrostatic generators 213, namely: it is within the scope of the present disclosure that the static electricity generator 213 may not be disposed within the receiving cavity of some of the wafer support posts 212.
In one embodiment of the present disclosure, the materials of each wafer support post 212 may be antistatic materials to prevent the wafer support post 212 from conducting electricity and affecting inspection. Meanwhile, since the wafer support platform 21 is provided with the electrostatic generator 213, in order to prevent accidents, it is necessary to ground the entire wafer support platform 21 to conduct excessive static electricity to the ground.
In one embodiment of the present disclosure, the wafer 22 may be 8 inches or 12 inches in diameter and the wafer support posts 212 may be about 3cm to 8cm from the edge of the wafer 22 when the wafer 22 is placed on the wafer support posts 212. However, the diameter of the wafer 22 may be other values, and the distance between the wafer support post 212 and the edge of the wafer 22 may be other values, which may be set according to the actual needs, and are all within the scope of the present disclosure.
Also, in order to ensure the accuracy of the detection by the detecting device 3, the metal ion content of the surface of the wafer 22 needs to be lower than a first threshold value, which may be 1×10, before the wafer 22 collects the metal ions 9 atoms/cm 2 . When the metal ion content on the surface of the wafer 22 is lower than the first threshold, it can be determined that the surface of the wafer 22 is clean at this time, so that the metal ions attached to the surface of the wafer 22 are all metal ions in the environment when the wafer 22 is detected, and further the accuracy of detection by the detection device 3 can be effectively improved.
In one embodiment of the present disclosure, the support 211 may include: a support base 2111 and a support platform 2112. Wherein the support platform 2112 may be located on the support base 2111, and the support platform 2112 may be movable in a direction away from or towards the support base 2111, the wafer support columns 212 may be located on a side of the support platform 2112 away from the support base 2111. The height of the diffused metal ions can be different due to the process variation of the machine. Thus, the present disclosure provides the support platform 2112 to be movable in a direction away from or toward the support base 2111, which may enable the support platform 2112 to have a telescoping function, thus enabling the wafer 22 to reach various desired heights for metal ion collection.
The detection device 3 may include: an extraction assembly and a quantitative detection device. Wherein the extraction assembly may be used to extract metal ion contaminants collected from the surface of the wafer 22.
The extraction component may include: a silicon oxide decomposing device and an extracting device. Wherein the silicon oxide decomposition device may include: sealing the chamber and the silicon oxide decomposition liquid injection device. The silicon oxide decomposition liquid injection device may be connected to the sealed chamber, and the silicon oxide decomposition liquid injection device may be capable of injecting steam of the silicon oxide decomposition liquid into the sealed chamber.
The extraction device may include: a suction nozzle and a collection container. Wherein the suction nozzle is capable of adsorbing the metal ion dissolving liquid and moving the metal ion dissolving liquid on the surface of the wafer 22.
After the collection of the metal ions in the environment of the wafer 22 is completed, the wafer 22 may be placed in the sealed chamber, and the vapor of the silicon oxide decomposition solution is injected into the sealed chamber by the silicon oxide decomposition solution injection device to decompose the silicon oxide layer on the surface of the wafer 22 and change the property of the surface of the wafer 22, so that the surface of the wafer 22 is changed from the original hydrophilicity to the hydrophobicity. Subsequently, a certain amount of metal ion dissolving liquid may be dropped onto the surface of the wafer 22, and the metal ion dissolving liquid may be adsorbed by the suction nozzle to move on the surface of the wafer 22, so that metal ions on the surface of the wafer 22 are all dissolved in the metal ion dissolving liquid. In order to ensure that the metal ions on the surface of the wafer 22 are dissolved in the metal ion dissolving solution, the metal ion dissolving solution may be adsorbed by the suction nozzle and move circumferentially on the surface of the wafer 22, and the metal ion dissolving solution may pass through each position on the surface of the wafer 22. Meanwhile, the metal ion dissolving liquid for dissolving the metal ions can be collected by using a collecting container.
In one embodiment of the present disclosure, the silicon oxide decomposition liquid may be hydrofluoric acid, the metal ion dissolution liquid may be an acidic solution, and the acidic solution may dissolve metal ions and does not react with the wafer 22, so that the problem of inaccurate detection results caused by contamination of silicon in the wafer 22 when collecting metal ion contaminants enriched on the wafer 22 may be prevented. However, other silica decomposing liquids and metal ion dissolving liquids may be selected without limitation, and are within the scope of the present disclosure.
In addition, the volume of the metal ion dissolved solution dropped on the surface of the wafer 22 may be 200 μl, but is not limited thereto.
In one embodiment of the present disclosure, the extracting apparatus may further include: a dosing ring. The dosing ring may be used to draw a fixed volume of metal ion dissolution liquid and drop the drawn metal ion dissolution liquid onto the surface of the wafer 22.
In one embodiment of the present disclosure, the quantitative detection device may detect metal ion contaminants in the metal ion dissolution liquid collected in the collection container to obtain quantitative data of the metal ion contaminants. The quantitative detection device can be an inductively coupled plasma mass spectrometer, and the detection precision of the inductively coupled plasma mass spectrometer can reach the level of ppt ng/L, so that the precision of a detection result can be ensured, but the quantitative detection device is not limited to the detection result, and can be other quantitative detection devices.
The data analysis device 4 may be connected to a quantitative detection device for analyzing quantitative data of the metal ion contaminants detected by the quantitative detection device and giving detection results of the metal ion contaminants.
In one embodiment of the present disclosure, the detection apparatus 1 of metal ion contaminants may further include: wafer cleaning device 5. The wafer cleaning device 5 is used for cleaning the wafer 22 so that the metal ion concentration on the surface of the wafer 22 is less than or equal to a first threshold value.
In one embodiment of the present disclosure, the recovery rate of metal ions collected on the wafer 22 by the extraction assembly described above is high, for example: the recovery of copper ions is typically greater than eighty percent and the recovery of other metal ions is typically greater than ninety percent. Therefore, the metal ion content of the surface of the wafer 22 after being extracted by the extracting component may be less than or equal to the first threshold. Thus, the wafer cleaning apparatus 5 may be the extraction assembly described above, i.e., it is understood that the present disclosure may utilize the extraction assembly described above to clean the wafer 22. After the extraction assembly extracts the metal ion contaminants, the metal ion concentration at the surface of the wafer 22 may be made less than or equal to the first threshold. However, it is within the scope of the present disclosure that the wafer cleaning device 5 may be a separate device for cleaning the wafer 22, and may be configured according to practical needs.
In addition, the detection device 1 for metal ion contaminants provided in the present disclosure may further include: a mobile device 6. The movement device 6 may be used to transfer the wafer 22 from the wafer cleaning device 5 to the wafer support platform 21. The movement device 6 may also be used to transfer the wafer 22 from the wafer support platform 21 into the sealed chamber.
The moving device 6 may be a mechanical arm. Utilize the arm can realize full automatization work to make the detection device 1 of metal ion pollutant that this disclosure provided can reduce the human cost, also can prevent that the artifical cross contamination's that appears when detecting problem.
In one embodiment of the present disclosure, the detection apparatus 1 of metal ion contaminants may further include: and an early warning device 7. The early warning device 7 may be connected to the data analysis device 4, and the early warning device 7 may be capable of analyzing the detection result of the metal ion contaminant. When the detection result of the metal ion pollutants is abnormal, alarm information can be sent out. Therefore, operators can timely learn that the content of the metal ion pollutants in the environment is abnormal through the alarm information and timely process the metal ion pollutants, so that the manufactured semiconductor product can be prevented from being problematic, and the product yield is improved.
The above-provided detection device 1 for metal ion contaminants can be automated in terms of the respective components. Therefore, the detection device 1 for metal ion pollutants provided by the disclosure realizes the full-automatic online monitoring and detection of metal ions in the environment to a certain extent, and avoids the problems of few sampling points, long manual time consumption and the like existing in the operations of pretreatment, sampling, analysis, data processing and the like finished by offline laboratory personnel, so that the situation of the content of the metal ions in the environment cannot be reflected in time; meanwhile, the full-automatic detection can eliminate the problems of inaccurate detection results caused by errors in operation among different people, pollution during sampling pretreatment and the like.
Another aspect of the present disclosure provides a method for detecting a metal ion contaminant, which may be applied to the above-described metal ion contaminant detection apparatus 1. The detection method of the metal ion pollutants can accurately and quantitatively detect the metal ion pollutants in the environment. The environment may be the environment in which the semiconductor fabrication process is located, for example: clean rooms, etc., but other environments are also possible.
As shown in fig. 5, the detection method of metal ion contaminants provided in the present disclosure may include:
step S10, placing a wafer support platform 21 in a space to be detected, placing a wafer 22 on the wafer support platform 21, and providing static electricity to the wafer 22 by using the wafer support platform 21 so as to collect metal ion pollutants by using the wafer 22;
step S20, extracting the metal ion pollutants collected on the surface of the wafer 22 by using an extraction component, and quantitatively analyzing the extracted metal ion pollutants by using a quantitative detection device to obtain quantitative data of the metal ion pollutants;
step S30, analyzing the quantitative data of the metal ion contaminant by using the data analysis device 4, and giving the detection result of the metal ion contaminant.
The following describes the above steps in detail:
in step S10, the wafer support platform 21 may be placed in the space to be inspected, and the wafer 22 may be placed on the wafer support platform 21, and static electricity may be provided to the wafer 22 by using the wafer support platform 21 to collect metal ion contaminants by using the wafer 22. Specifically, the space to be detected may be an environment in which the semiconductor manufacturing process is located. The acquisition time can be set, and the acquisition time is not limited by the present disclosure, and can be set according to actual needs. The wafer support platform 21 may be placed in the space to be inspected. When the support portion 211 of the wafer support platform 21 includes the support base 2111 and the support platform 2112, the support base 2111 may be placed in a space to be detected, and the support platform 2112 may be moved according to a diffusion height of the metal ion contaminant in the space to be detected, so that the support platform 2112 moves in a direction approaching or separating from the support base 2111, so that the support platform 2112 reaches a diffusion position of the metal ion contaminant, and thus detection of the metal ion contaminant may be more accurate.
In one embodiment of the present disclosure, the wafer 22 may be placed on the wafer support post 212 and the wafer 22 may be brought into contact with the electrostatic generator 213 through the opening of the wafer support post 212 to provide the electrostatic charge to the wafer 22 through the electrostatic generator 213. Specifically, the wafer 22 may be placed at an end of the electrostatic generator switch away from the electrostatic generator body, and the electrostatic generator switch is moved to a direction approaching the electrostatic generator body by using the gravity of the wafer 22, so as to open the electrostatic generator body. When the electrostatic generator body is opened, the electrostatic generator body may be utilized to generate and provide the electrostatic charge to the wafer 22 via the electrostatic generator switch.
The static electricity on the wafer 22 can be utilized to enable the metal ion pollutants to be adsorbed on the surface of the wafer 22, and the collection of the metal ion pollutants is completed after the collection time.
In one embodiment of the present disclosure, when the metal ion contaminant detection apparatus 1 has a robot arm, the wafer 22 may be automatically placed on the wafer support column 212 using the robot arm.
In step S20, the metal ion contaminants collected on the surface of the wafer 22 may be extracted by the extraction component, and the extracted metal ion contaminants may be quantitatively analyzed by the quantitative detection device to obtain quantitative data of the metal ion contaminants. Specifically, the wafer 22 after the metal ion contaminants are collected may be placed in a sealed chamber, and the vapor of the silicon oxide decomposition liquid may be injected into the sealed chamber by a silicon oxide decomposition liquid injection device. The silicon oxide decomposition liquid may be hydrofluoric acid, but is not limited thereto.
A fixed volume of the metal ion dissolving liquid may be dropped on the wafer 22 and adsorbed by the suction nozzle. The suction nozzle may be moved so that the metal ion dissolving liquid moves on the surface of the wafer 22 to adsorb metal ion contaminants collected on the surface of the wafer 22 and form an extraction solution. Specifically, in order to ensure that the metal ions on the surface of the wafer 22 are all dissolved in the metal ion dissolving solution, the metal ion dissolving solution may be adsorbed by the suction nozzle and perform a circular motion on the surface of the wafer 22, and the metal ion dissolving solution may pass through various positions on the surface of the wafer 22. The metal ion dissolving solution may be an acidic solution, but is not limited thereto.
In one embodiment of the present disclosure, the extraction assembly may further comprise a dosing ring, with which a fixed volume of droplets of metal ion solution may be drawn to land on the surface of the wafer 22. Among them, the fixed volume of the metal ion dissolving liquid may be 200. Mu.l, but is not limited thereto.
After adsorbing the metal ion contaminants collected on the surface of the wafer 22 and forming an extraction solution, the extraction solution may be placed in a collection vessel.
In one embodiment of the present disclosure, the extraction solution in the collection vessel may be directed into a quantitative detection device, which may be an inductively coupled plasma mass spectrometer. The concentration of the metal ion contaminants in the extraction solution can be detected by using the quantitative detection device to obtain quantitative data of the metal ion contaminants.
In step S30, quantitative data of the metal ion contaminants may be analyzed by the data analysis device 4, and a detection result of the metal ion contaminants may be given. Specifically, quantitative data of the metal ion contaminants may be input into the data analysis device 4. The quantitative data of the metal ion pollutants are converted into the quantity of the metal pollutants generated per hour in each square meter in the space to be detected by the data analysis device 4 by utilizing a metal ion content calculation formula so as to obtain the detection result of the metal ion pollutants.
The metal ion content calculation formula may be:
wherein, C is the quantity of metal pollutants generated per square meter in each hour in the space to be detected; m is the concentration of metal ion contaminants; volume is the Volume of the extraction solution; n (N) A Is an avogalileo constant; the Atomic Mass is the relative molecular Mass of the metal ion contaminant; area is the Area of the wafer 22; and t is the acquisition time.
In one embodiment of the present disclosure, the method of detecting metal ion contaminants prior to placing the wafer 22 on the wafer support platform 21 may further comprise: setting a first threshold value, which may be 1×10 9 atoms/cm 2 . The wafer 22 may be cleaned by the wafer cleaning device 5, and the metal ion concentration on the cleaned wafer 22 may be obtained by the quantitative detection device 3. The data analysis device 4 can analyze the concentration of the metal ions on the cleaned wafer 22, when the concentration of the metal ions is less than or equal to the first threshold value, the wafer 22 can be judged to be clean, and the cleaned wafer 22 can be placed on the wafer support platform 21; when the metal ion concentration is greater than the first threshold, it may be determined that the wafer 22 is not cleaned, and the wafer 22 needs to be cleaned again.
In one embodiment of the present disclosure, the wafer cleaning apparatus 5 may be an extraction assembly as described above, i.e., it is understood that the present disclosure may utilize the extraction assembly to clean the wafer 22. After the extraction assembly extracts the metal ion contaminants, a first cleaning of the surface of the wafer 22 may be completed. At this time, if the metal ion concentration on the surface of the wafer 22 is less than or equal to the first threshold value, the wafer 22 may be directly placed on the wafer support column 212; when the metal ion concentration on the surface of the wafer 22 is greater than the first threshold, the extraction device may be used to clean the wafer 22 again until the metal ion concentration on the surface of the wafer 22 is less than or equal to the first threshold.
In one embodiment of the present disclosure, when the metal ion contaminant detection apparatus 1 has the moving apparatus 6, the moving apparatus 6 may be used to transfer the wafer 22 from the wafer cleaning apparatus 5 onto the wafer support column 212 and transfer the wafer 22 from the wafer support platform 21 into the sealed chamber.
When the moving device 6 is a mechanical arm, the mechanical arm can be used to transfer the wafer 22 from the wafer cleaning device 5 to the wafer support column 212, and transfer the wafer 22 from the wafer support platform 21 to the sealed chamber, so as to realize full-automatic detection.
In one embodiment of the present disclosure, after the detection result of the metal ion contaminant is given, the detection method of the metal ion contaminant may further include: the second threshold may be set, and the specific value of the second threshold is not limited by the disclosure, and may be selected according to different semiconductor manufacturing processes, which is within the scope of the disclosure.
The detection result of the metal ion contaminant may be input to the early warning device 7, and the detection result may be judged by the early warning device 7. When the number of metal pollutants generated per hour in each square meter in the space to be detected is larger than a second threshold value, judging that the detection result is abnormal; and judging that the detection result is normal when the number of metal pollutants generated per hour in each square meter in the space to be detected is smaller than or equal to the second threshold value.
When the early warning device 7 judges that the detection result is abnormal, the early warning device 7 can send out alarm information. Therefore, operators can timely learn that the content of the metal ion pollutants in the environment is abnormal through the alarm information and timely process the metal ion pollutants, so that the manufactured semiconductor product can be prevented from being problematic.
In one embodiment of the present disclosure, after the early warning device 7 sends out the warning information, the detection method of the metal ion contaminant may further include: and starting an emergency retest program to retest the metal ion pollutants in the space to be detected. The method and the device can eliminate the accident of the detection result through the emergency retest program, thereby preventing the problem that the early warning device 7 falsely sends out the alarm information due to errors in the first detection.
The steps in the detection method of the metal ion pollutants can be automatically operated. Therefore, the detection method of the metal ion pollutants provided by the disclosure realizes the full-automatic online monitoring and detection of the metal ions in the environment to a certain extent, and avoids the problems of few sampling points, long manual time consumption and the like existing in the operations of pretreatment, sampling, analysis, data processing and the like finished by the personnel in the off-line laboratory, so that the situation of the metal ion content in the environment cannot be reflected in time; meanwhile, the full-automatic detection can eliminate the problems of inaccurate detection results caused by errors in operation among different people, pollution during sampling pretreatment and the like.
In addition, the specific structure, types, connection modes and technical effects of each component in the metal ion contaminant detection device 1 described in the metal ion contaminant detection method can be referred to the above specific description of the metal ion contaminant detection device 1, and the detailed description thereof will not be repeated.
Meanwhile, it should be further noted that the steps involved in the method for detecting metal ion contaminants may be performed in an exchange order, and the foregoing description is merely illustrative from the perspective of one exemplary embodiment, and those skilled in the art may change the execution order of some of the steps according to actual situations, which is within the scope of the present disclosure.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This disclosure is intended to cover any adaptations, uses, or adaptations of the disclosure following the general principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.
Claims (20)
1. A device for detecting metal ion contaminants, comprising:
the collecting device comprises a wafer supporting platform and a wafer, wherein the wafer can be positioned on the wafer supporting platform, the wafer supporting platform can provide static electricity for the wafer, and the wafer can collect the metal ion pollutants;
the detection device comprises an extraction component and a quantitative detection device, wherein the extraction component is used for extracting metal ion pollutants collected on the surface of the wafer;
and the data analysis device is connected with the quantitative detection device and is used for analyzing the quantitative data of the metal ion pollutants detected by the quantitative detection device and giving out the detection result of the metal ion pollutants.
2. The apparatus of claim 1, wherein the wafer support platform comprises:
a support part;
the wafer support column group is provided with at least one wafer support column, the wafer support column is positioned on the surface of one side of the support part and extends in the direction away from the support part, the wafer can be positioned on the wafer support column, the wafer support column is provided with a containing cavity, an opening is arranged on one side of the wafer support column away from the support part, and the opening is communicated with the containing cavity;
And the electrostatic generator is arranged in the accommodating cavity, and the wafer can be contacted with the electrostatic generator through the opening.
3. The apparatus for detecting metal ion contaminants according to claim 2, wherein the electrostatic generator includes:
the static generator body is positioned in the accommodating cavity;
the electrostatic generator switch is located the electrostatic generator body is kept away from the one end of supporting part, and with electrostatic generator body coupling, the electrostatic generator switch is kept away from the one end of electrostatic generator body passes the opening and to keeping away from the direction of supporting part extends, the wafer can with the electrostatic generator switch is kept away from the one end contact of electrostatic generator body, just the electrostatic generator can be to be close to or keep away from the direction motion of electrostatic generator body.
4. The apparatus according to claim 3, wherein the wafer support column group has three wafer support columns, and an included angle between any two of the wafer support columns is the same;
the wafer support platform is provided with three static generators, and each static generator is positioned in the accommodating cavity of one wafer support column.
5. The apparatus according to claim 2, wherein the support portion includes:
a support base;
the support platform is located on the support seat, and the support platform can move along the direction away from or close to the support seat, the wafer support column is located the support platform is away from one side of the support seat.
6. The apparatus for detecting metal ion contaminants according to claim 1, wherein the extraction assembly includes:
the silicon oxide decomposition device comprises a sealing chamber and a silicon oxide decomposition liquid injection device, wherein the silicon oxide decomposition liquid injection device is connected with the sealing chamber and can inject steam of the silicon oxide decomposition liquid into the sealing chamber;
the extraction device comprises a suction nozzle and a collecting container, wherein the suction nozzle can adsorb the metal ion dissolving liquid and enable the metal ion dissolving liquid to move on the surface of the wafer.
7. The apparatus for detecting metal ion contaminants according to claim 6, further comprising:
And the wafer cleaning device is used for cleaning the wafer so that the metal ion concentration on the surface of the wafer is smaller than or equal to a first threshold value.
8. The apparatus for detecting metal ion contaminants according to claim 7, further comprising:
and the moving device is used for transferring the wafer from the wafer cleaning device to the wafer supporting platform and transferring the wafer from the wafer supporting platform into the sealing cavity.
9. The apparatus for detecting metal ion contaminants according to claim 1, further comprising:
the early warning device is connected with the data analysis device, and can analyze the detection result of the metal ion pollutants and send out warning information when the detection result of the metal ion pollutants is abnormal.
10. A method for detecting a metal ion contaminant, wherein the method for detecting a metal ion contaminant uses the apparatus for detecting a metal ion contaminant according to any one of claims 1 to 9, and the method for detecting a metal ion contaminant comprises:
Placing a wafer supporting platform in a space to be detected, placing the wafer on the wafer supporting platform, and providing static electricity for the wafer by utilizing the wafer supporting platform so as to collect the metal ion pollutants by utilizing the wafer;
extracting the metal ion pollutants collected on the surface of the wafer by using an extraction component, and quantitatively analyzing the extracted metal ion pollutants by using a quantitative detection device so as to obtain quantitative data of the metal ion pollutants;
and analyzing the quantitative data of the metal ion pollutants by using a data analysis device, and giving out the detection result of the metal ion pollutants.
11. The method of claim 10, wherein the placing a wafer support platform in a space to be inspected and placing the wafer on the wafer support platform, the wafer being provided with static electricity by the wafer support platform to collect the metal ion contaminants by the wafer, comprises:
setting acquisition time;
placing a wafer support platform in a space to be detected;
placing the wafer on a wafer support column and contacting the wafer with an electrostatic generator through an opening of the wafer support column to provide static electricity to the wafer through the electrostatic generator;
And utilizing static electricity on the wafer to enable the metal particle pollutants to be adsorbed on the surface of the wafer, and completing the collection of the metal ion pollutants after the collection time.
12. The method of claim 11, wherein the contacting the wafer through the opening of the wafer support post with an electrostatic generator to provide static electricity to the wafer through the electrostatic generator comprises:
placing the wafer at one end of the electrostatic generator switch far away from the electrostatic generator body, and utilizing the gravity of the wafer to enable the electrostatic generator switch to move towards the direction close to the electrostatic generator body so as to open the electrostatic generator body;
and generating static electricity by using the static electricity generator body, and providing the static electricity to the wafer through the static electricity generator switch.
13. The method of claim 11, wherein the placing the wafer support platform in the space to be inspected comprises:
placing a supporting seat in the space to be detected;
and moving a supporting platform according to the diffusion height of the metal ion pollutants in the space to be detected, so that the supporting platform moves towards a direction close to or far away from the supporting seat, and the supporting platform reaches the diffusion position of the metal ion pollutants.
14. The method of claim 11, wherein extracting the metal ion contaminants collected on the wafer surface with the extraction assembly comprises:
placing the wafer after collecting the metal ion pollutants in a sealed cavity, and injecting steam of a silicon oxide decomposition liquid into the sealed cavity by utilizing a silicon oxide decomposition liquid injection device;
dropping a fixed volume of metal ion dissolving liquid on the wafer, adsorbing the metal ion dissolving liquid by using a suction nozzle, and moving the suction nozzle to enable the metal ion dissolving liquid to move on the surface of the wafer so as to adsorb metal ion pollutants collected on the surface of the wafer and form an extraction solution;
the extraction solution is placed in a collection container.
15. The method according to claim 14, wherein the quantitatively analyzing the extracted metal ion contaminants with a quantitative detection device to obtain quantitative data of the metal ion contaminants comprises:
introducing the extraction solution in the collection container into the quantitative detection device;
and detecting the concentration of the metal ion pollutants in the extracting solution by using the quantitative detection device so as to obtain quantitative data of the metal ion pollutants.
16. The method according to claim 15, wherein the analyzing quantitative data of the metal ion contaminant by the data analyzing device and giving a detection result of the metal ion contaminant, comprises:
inputting quantitative data of the metal ion contaminants into the data analysis device;
converting quantitative data of the metal ion pollutants into the quantity of the metal pollutants generated per hour in each square meter in the space to be detected by using a metal ion content calculation formula through the data analysis device so as to obtain detection results of the metal ion pollutants;
wherein, the metal ion content calculation formula is:
wherein, C is the quantity of metal pollutants generated per square meter in each hour in the space to be detected; m is the concentration of the metal ion contaminant; volume is the Volume of the extraction solution; n (N) A Is an avogalileo constant; the Atomic Mass is the relative molecular Mass of the metal ion contaminant; area is the Area of the wafer; and t is the acquisition time.
17. The method of claim 16, further comprising, prior to said placing the wafer on a wafer support platform:
Setting a first threshold;
cleaning the wafer by using a wafer cleaning device;
acquiring the concentration of metal ions on the cleaned wafer by using the quantitative detection device;
analyzing the metal ion concentration through the data analysis device, and judging that the wafer is clean when the metal ion concentration is smaller than or equal to the first threshold value, wherein the wafer can be placed on the wafer support platform; and judging that the wafer is not cleaned when the metal ion concentration is larger than the first threshold value, and cleaning the wafer again.
18. The method of claim 17, wherein the placing the wafer on a wafer support post comprises: transferring the wafer from the wafer cleaning device to the wafer support column by using a mechanical arm;
the wafer after collecting the metal ion pollutants is placed in a sealed cavity, and the method comprises the following steps: and transferring the wafer from the wafer support platform into the sealed cavity by using a mechanical arm.
19. The method according to claim 16, wherein after the detection result of the metal ion contaminant is given, the method further comprises:
Setting a second threshold;
inputting the detection result of the metal ion pollutants into an early warning device;
judging the detection result by using the early warning device, and judging that the detection result is abnormal when the number of metal pollutants generated per hour in each square meter in the space to be detected is greater than the second threshold value; when the number of metal pollutants generated per hour in each square meter in the space to be detected is smaller than or equal to the second threshold value, judging that the detection result is normal;
and after the early warning device judges that the detection result is abnormal, the early warning device sends out alarm information.
20. The method of claim 19, wherein after the warning device sends out the warning message, the method further comprises:
and starting an emergency retest program to retest the metal ion pollutants in the space to be detected.
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| CN117393452A (en) * | 2023-12-11 | 2024-01-12 | 合肥晶合集成电路股份有限公司 | Method for collecting metal on surface of wafer |
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| CN117393452A (en) * | 2023-12-11 | 2024-01-12 | 合肥晶合集成电路股份有限公司 | Method for collecting metal on surface of wafer |
| CN117393452B (en) * | 2023-12-11 | 2024-03-22 | 合肥晶合集成电路股份有限公司 | Method for collecting metal on surface of wafer |
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