CN116487112A - Electrode material and preparation method thereof - Google Patents
Electrode material and preparation method thereof Download PDFInfo
- Publication number
- CN116487112A CN116487112A CN202310457866.4A CN202310457866A CN116487112A CN 116487112 A CN116487112 A CN 116487112A CN 202310457866 A CN202310457866 A CN 202310457866A CN 116487112 A CN116487112 A CN 116487112A
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- layer
- electrode material
- conductive
- photoresist layer
- conductive particles
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- 239000007772 electrode material Substances 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000010410 layer Substances 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000002245 particle Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000011241 protective layer Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 239000000853 adhesive Substances 0.000 claims abstract description 9
- 230000001070 adhesive effect Effects 0.000 claims abstract description 9
- 238000009713 electroplating Methods 0.000 claims abstract description 5
- 238000007747 plating Methods 0.000 claims abstract description 5
- 238000011049 filling Methods 0.000 claims abstract description 4
- 238000012545 processing Methods 0.000 claims abstract description 4
- 239000002356 single layer Substances 0.000 claims abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 238000005266 casting Methods 0.000 claims description 8
- 238000010345 tape casting Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000000016 photochemical curing Methods 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 229920001187 thermosetting polymer Polymers 0.000 claims description 3
- 238000004049 embossing Methods 0.000 claims description 2
- 238000013508 migration Methods 0.000 abstract description 2
- 230000005012 migration Effects 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 239000011521 glass Substances 0.000 description 7
- 239000002985 plastic film Substances 0.000 description 6
- 229920006255 plastic film Polymers 0.000 description 6
- 238000000151 deposition Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012266 salt solution Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- -1 silver halide Chemical class 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- QCVGEOXPDFCNHA-UHFFFAOYSA-N 5,5-dimethyl-2,4-dioxo-1,3-oxazolidine-3-carboxamide Chemical compound CC1(C)OC(=O)N(C(N)=O)C1=O QCVGEOXPDFCNHA-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 102000002322 Egg Proteins Human genes 0.000 description 1
- 108010000912 Egg Proteins Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012822 chemical development Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 235000014103 egg white Nutrition 0.000 description 1
- 210000000969 egg white Anatomy 0.000 description 1
- 238000007765 extrusion coating Methods 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000000017 hydrogel Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 244000144977 poultry Species 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
The invention relates to the technical field of electrode materials, in particular to a preparation method of an electrode material, which comprises the following steps: s1: selecting a base material; s2: forming a photoresist layer on a substrate; s3: processing a groove on the photoresist layer; s4: filling conductive particles in the grooves, and removing residual conductive particles on the surface of the photoresist layer; s5: plating a metal conductive layer in the trench by electroplating; s6: applying optical adhesive on the surface to form a protective layer to form a single-layer conductive network structure; s7: the above steps are repeated as needed to form a multi-layered conductive network, and the electrode material prepared by the above method is also disclosed. The conductive layer in the electrode material groove prepared by the method has no ion migration problem and has good binding force with the substrate, and the conductive layer with excellent conductivity is formed in the groove through chemical plating, so that the square resistance is lower than 1 omega/≡.
Description
Technical Field
The invention relates to the technical field of electrode materials, in particular to an electrode material and a preparation method thereof.
Background
Electrode materials play an important role in many electronic devices. Some electrode materials may even form electronic sensors, such as capacitive sensors, by device structural design. The development of the novel electrode material is significant to the fields of wearable intelligent electronic equipment, novel display equipment, electromagnetic shielding, intelligent glass and the like.
Patent document CN101577148B discloses a method for producing a transparent conductive film in which a metal network pattern is formed by exposure, chemical development and electroless plating of a photosensitive material containing a silver halide emulsion. Wherein the silver halide emulsion layer is applied by wave-stream extrusion coating to obtain continuous and uniform coating, and then selectively depositing metal particles on fine silver grid wires by electroless plating to form a conductive metal layer. Patent document CN105350043B provides a method of preparing a metal mesh transparent electrode material by depositing a metal conductive seed layer on a crack sacrificial layer template on a substrate, and then continuing to deposit a metal mesh by electroplating the metal conductive seed layer. Wherein the cracking sacrificial layer template material is egg white liquid or acrylic resin polymer of poultry. The metal conductive seed layer is prepared by adopting a magnetron sputtering method or a method of spraying a metal salt solution and then annealing and sintering. However, the magnetron sputtering method requires a high temperature resistance for the substrate material because the manufacturing cost is relatively high and the method of spraying a metal salt solution and then annealing and sintering requires only a high temperature resistant material such as glass. Patent document CN107851484B reports a method for preparing a transparent conductive film with embedded metal mesh. First, a mesh pattern is formed on a conductive glass substrate by lithography after exposure and development on a protective layer, and then copper is plated to mesh grooves and the protective layer is removed, and then a copper mesh is formed on a conductive base. Subsequently, the metal mesh is pressed into the softened plastic film, the plastic film is peeled off from the FTO glass substrate after cooling, and finally the metal mesh is transferred into the plastic film. The preparation method is complicated in preparation steps and is difficult to ensure the optical quality and thickness uniformity of the plastic film in the metal grid transferring process in the large-area preparation process. Patent document CN106910551B discloses a method for preparing a electroplated metal reinforced transparent conductive film. Which comprises the following steps: firstly preparing a transparent conductive layer on the surface of a base material by spin coating a nano silver solution, then depositing a metal layer on the transparent conductive layer by adopting an electroplating method, and performing post-treatment to obtain an electroplated metal reinforced transparent conductive film, wherein the square resistance of the electrode material prepared by the method is large.
Disclosure of Invention
The invention aims to provide an electrode material and a preparation method thereof, so as to achieve the purpose of low sheet resistance of the prepared electrode material and solve the problems in the prior art.
In order to achieve the above purpose, the present invention provides the following technical solutions: the preparation method of the electrode material comprises the following steps:
s1: selecting a base material;
s2: forming a photoresist layer on a substrate;
s3: processing a groove on the photoresist layer;
s4: filling conductive particles in the grooves, and removing residual conductive particles on the surface of the photoresist layer;
s5: plating a metal conductive layer in the trench by electroplating;
s6: applying optical adhesive on the surface to form a protective layer to form a single-layer conductive network structure;
s7: and continuously repeating the steps as required to form a multilayer conductive network.
Preferably, the photoresist layer is formed by any one of coating, casting and knife coating.
Preferably, the grooves are formed by any one of laser direct writing, photoetching and nano embossing.
Preferably, the conductive particles are filled into the grooves by means of casting or knife coating, and the residual conductive particles on the surface of the photoresist layer are removed by means of plasma treatment.
Preferably, the metal conductive layer is one of copper, nickel and silver or an alloy.
Preferably, the protective layer is formed by any one of coating, casting and doctor blade coating, and the protective layer is one of photo-curing optical adhesive and thermosetting optical adhesive.
The electrode material is prepared by adopting a preparation method of the electrode material and comprises a base material, a photoresist layer, conductive particles, a metal conductive layer and a protective layer.
Compared with the prior art, the invention has the beneficial effects that:
1. the method for preparing the electrode material has lower requirement on the base material, can adopt any material, can ensure that the prepared electrode material has uniform thickness and has higher quality.
2. The conductive layer in the electrode material groove prepared by the method has no ion migration problem and has good binding force with the substrate, and the conductive layer with excellent conductivity is formed in the groove through chemical plating, so that the square resistance is lower than 1 omega/≡.
Drawings
FIG. 1 is a schematic flow chart of the preparation method of the invention.
Fig. 2 is a schematic view of an electrode structure according to the present invention.
In the figure: a substrate 1, a photoresist layer 2, conductive particles 3, a metal conductive layer 4 and a protective layer 5.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and detailed description, wherein it is to be understood that, under the precondition of no conflict, new embodiments can be formed by any combination of the embodiments or technical features described below, and it should be understood that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1 to 2, as shown in fig. 1, the present invention provides a technical solution: the preparation method of the electrode material comprises the following steps:
s1: the substrate 1 may be any material, conductor (such as copper foil, aluminum foil, gold foil, etc.) or semiconductor (such as silicon wafer, etc.), or insulator (such as glass, plastic film, etc.); rigid materials (e.g., glass, silicon wafers, etc.) or flexible materials (e.g., plastic films, copper films, etc.) or stretchable materials (e.g., hydrogels, PDMS, etc.); transparent materials (glass, PET film, etc.) and opaque materials (e.g., copper foil, aluminum foil, etc.);
s2: forming a photoresist layer 2 on a substrate, and forming a layer of photoresist on the substrate 1 by means of coating, casting, knife coating and the like;
s3: forming a hooked groove with any pattern on the photoresist layer 2 by means of laser direct writing, photoetching, nanoimprint or the like;
s4: filling the conductive particles 3 into the grooves by means of curtain coating, knife coating and the like, and simultaneously carrying out plasma treatment on the surface of the top layer of the photoresist layer 2 to remove the residual conductive sound pull 3, wherein the conductive particles 3 can be nano silver, copper, nickel and other conductive materials;
s5: the metal conductive layer is formed on the nickel in the groove through electric nickel, and the metal conductive layer can be copper, nickel, silver, various alloys and the like;
s6: then, applying optical adhesive on the surface by means of coating, casting, knife coating and the like to form a protective layer 5, wherein the protective layer 5 is a photo-curing or thermosetting optical adhesive;
s7: and continuously repeating the steps to form each structure of the multilayer conductive network or not repeating the steps to form a single-layer conductive network structure.
The electrode material is prepared by adopting the preparation method of the electrode material and comprises a base material 1, a photoresist layer 2, conductive particles 3, a metal conductive layer 4 and a protective layer 5.
The above embodiments are only preferred embodiments of the present invention, and the scope of the present invention is not limited thereto, but various modifications can be made by those skilled in the art without inventive effort from the above concepts, and all modifications are within the scope of the present invention.
Claims (7)
1. The preparation method of the electrode material is characterized by comprising the following steps: the preparation method comprises the following steps:
s1: selecting a base material (1);
s2: forming a photoresist layer (2) on a substrate;
s3: processing a groove on the photoresist layer (2);
s4: filling conductive particles (3) in the grooves, and removing residual conductive particles (3) on the surface of the photoresist layer (2);
s5: plating a metal conductive layer (4) in the trench by electroplating;
s6: applying optical adhesive on the surface to form a protective layer (5) so as to form a single-layer conductive network structure;
s7: and continuously repeating the steps as required to form a multilayer conductive network.
2. The method for producing an electrode material according to claim 1, characterized in that: the photoresist layer (2) is formed by any one of coating, casting and knife coating.
3. The method for producing an electrode material according to claim 1, characterized in that: the grooves are formed by processing in any one of laser direct writing, photoetching and nano embossing.
4. The method for producing an electrode material according to claim 1, characterized in that: the conductive particles (3) are filled into the grooves in a casting or doctor-blading mode, and the residual conductive particles (3) on the surface of the photoresist layer (2) are removed in a plasma treatment mode.
5. The method for producing an electrode material according to claim 1, characterized in that: the metal conductive layer (4) adopts one of copper, nickel and silver or adopts alloy.
6. The method for producing an electrode material according to claim 1, characterized in that: the protective layer (5) is formed by any one of coating, casting and knife coating, and the protective layer (5) is one of photo-curing optical adhesive and thermosetting optical adhesive.
7. Electrode material prepared by the method for preparing an electrode material according to any one of claims 1 to 6, characterized in that: comprises a base material (1), a photoresist layer (2), conductive particles (3), a metal conductive layer (4) and a protective layer (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310457866.4A CN116487112A (en) | 2023-04-26 | 2023-04-26 | Electrode material and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310457866.4A CN116487112A (en) | 2023-04-26 | 2023-04-26 | Electrode material and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116487112A true CN116487112A (en) | 2023-07-25 |
Family
ID=87211499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310457866.4A Pending CN116487112A (en) | 2023-04-26 | 2023-04-26 | Electrode material and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116487112A (en) |
-
2023
- 2023-04-26 CN CN202310457866.4A patent/CN116487112A/en active Pending
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