CN116470880A - Anti-symmetrically driven mems resonator - Google Patents

Anti-symmetrically driven mems resonator Download PDF

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Publication number
CN116470880A
CN116470880A CN202310731988.8A CN202310731988A CN116470880A CN 116470880 A CN116470880 A CN 116470880A CN 202310731988 A CN202310731988 A CN 202310731988A CN 116470880 A CN116470880 A CN 116470880A
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electrode
ring
resonance unit
electrodes
sensing
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CN202310731988.8A
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CN116470880B (en
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雷永庆
李明
谢国伟
金怡
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Mestar Microelectronics Shenzhen Co ltd
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Mestar Microelectronics Shenzhen Co ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Micromachines (AREA)

Abstract

The invention provides an antisymmetric driving micro-electromechanical system resonator which comprises a plurality of annular resonant units and a plurality of electrodes, wherein the annular resonant units and the electrodes are arranged in an array mode, the electrodes comprise driving electrodes and sensing electrodes which are respectively used for driving and sensing the resonant units, the driving electrodes are arranged at the inner side of a ring of one resonant unit and the outer side of a ring of the other resonant unit in two adjacent resonant units in a gap mode, and the sensing electrodes are arranged at the outer side of the ring of the one resonant unit and the outer side of the ring of the other resonant unit in the two adjacent resonant units in a gap mode. Each electrode is directly and fixedly connected with the base substrate and is electrically connected with an external contact arranged on the base substrate, so that the design of a traditional supporting structure is omitted, the process complexity can be reduced, and the electrode stress is reduced; moreover, compared with an insulating supporting structure, air or vacuum has a smaller dielectric constant, and parasitic capacitance can be effectively reduced under the condition that the supporting structure is omitted.

Description

Anti-symmetrically driven mems resonator
Technical Field
The invention relates to the technical field of micro-electromechanical systems, in particular to an anti-symmetrically driven micro-electromechanical system resonator.
Background
Microelectromechanical systems (MEMS, micro-Electro-Mechanical System) are a high-tech field based on microelectronics and micromachining technologies. MEMS technology can integrate mechanical components, drive components, electrical control systems, digital processing systems, etc. into one integral miniature unit. MEMS devices have the advantages of being small, intelligent, executable, integrated, good in process compatibility, low in cost and the like. The development of MEMS technology opens up a brand new technical field and industry, and micro sensors, micro actuators, micro components, micro mechanical optical devices, vacuum microelectronic devices, power electronic devices and the like manufactured by utilizing the MEMS technology have very wide application prospects in the fields of aviation, aerospace, automobiles, biomedicine, environmental monitoring, military, internet of things and the like.
Parasitic capacitance generally refers to the capacitive characteristics exhibited by inductance, resistance, chip pins, and the like at high frequencies. In practice, a resistor is equivalent to a series connection of a capacitor, an inductor and a resistor, and the parasitic capacitance does not appear very pronounced at low frequencies, whereas at high frequencies the equivalent value of the parasitic capacitance is greatly amplified and cannot be ignored. Whether it is a resistor, a capacitor, an inductor, a diode, a triode, a MOS transistor, an IC, and the like, the equivalent capacitance and inductance of which are considered at high frequencies.
In the prior art, in the case of differential driving, the electrode and wiring arrangement is shown in fig. 1. When the chip adopts a Through Silicon Via (TSV) technology, the TSV depth and the dielectric constant of the internal filling material are smaller, so that the chip has smaller parasitic capacitance. By adopting the structural design and the connection mode, when self parasitic capacitance is offset and balanced, the parasitic capacitance to the ground is required to be adopted at the position of the chip device layer by adopting the plug-in capacitance matching port (the plug-in electrode 13), so that the chip structure and the processing procedure can be increased, and the whole size of the chip is increased.
As shown in fig. 1, in the case of differential driving, a driving electrode 11 and a sensing electrode 12 are configured, and there are two signals at both the driving end and the sensing end, one transmitting an original signal (positive signal) and the other transmitting an opposite signal (negative signal).
It can be seen that on the resonator electrode arrangement, the drive electrode 11 is on the same side and the sense electrode 12 is on the other side, while the drive electrode 11 and the sense electrode 12 are symmetrically arranged. And on the drive electrode side, a positive drive electrode (d+ end) 111 is provided outside the resonance unit, and a negative drive electrode (D-end) 112 is provided inside the resonance unit 10; on the sensing electrode side, a positive sensing electrode (s+ end) 121 is disposed outside the resonance unit 10, and a negative sensing electrode (S-end) 122 is disposed inside the resonance unit 10.
Meanwhile, in the prior art, the driving electrode and the sensing electrode have a plurality of anchor structures, and the anchor structures comprise conductive anchors and insulating anchors so as to fix, support and conduct the electrodes. The multiple anchor point structures increase the complexity of the chip structure, increase parasitic capacitance and electrode stress, and bring adverse effects to the processing and overall size optimization of the chip.
It should be noted that the foregoing description of the background art is only for the purpose of facilitating a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background section of the present application.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a mems resonator and a driving method thereof, so as to solve the problems of larger parasitic capacitance and more complex resonator structure in the prior art.
To achieve the above and other objects, according to the present invention, there is provided an anti-symmetrically driven mems resonator comprising a plurality of ring-shaped resonator elements arranged in an array and a plurality of electrodes; the electrodes comprise driving electrodes and sensing electrodes which are respectively used for driving and sensing the resonance units; the driving electrode gap is arranged on the inner side of the ring of one resonance unit and the outer side of the ring of the other resonance unit in the two adjacent resonance units, and the sensing electrode gap is arranged on the outer side of the ring of the one resonance unit and the outer side of the ring of the other resonance unit in the two adjacent resonance units. The arrangement mode of the electrodes in the MEMS resonator is particularly changed, the design of a supporting structure can be omitted, and the electrodes are directly fixed by themselves, so that the process complexity is reduced, and the electrode stress is reduced; and compared with an insulating supporting structure, air or vacuum has smaller dielectric constant, and parasitic capacitance can be effectively reduced under the condition that the supporting structure is omitted. The external electrode is not required to be arranged, the resonator can balance internal parasitic capacitance, and the chip structure and the processing procedure are reduced.
Optionally, the mems resonator includes four resonant cells and eight electrodes, wherein the driving electrodes include two positive driving electrodes and two negative driving electrodes, and the sensing electrodes include two positive sensing electrodes and two negative sensing electrodes; wherein:
one positive driving electrode is arranged on the inner side of the ring of the first resonance unit, the other positive driving electrode is arranged on the outer side of the ring of the second resonance unit adjacent to the first resonance unit, and the two positive driving electrodes are electrically connected;
one negative driving electrode is arranged on the inner side of the ring of the third resonance unit which is opposite to the first resonance unit, the other negative driving electrode is arranged on the outer side of the ring of the fourth resonance unit which is opposite to the second resonance unit, and the two negative driving electrodes are electrically connected;
one positive sensing electrode is arranged on the inner side of the ring of the fourth resonance unit, the other positive sensing electrode is arranged on the outer side of the ring of the third resonance unit, and the two positive sensing electrodes are electrically connected;
one negative sensing electrode is arranged on the inner side of the ring of the second resonance unit, the other negative sensing electrode is arranged on the outer side of the ring of the first resonance unit, and the two negative sensing electrodes are electrically connected.
Alternatively, a phase difference of the driving signals applied by the positive driving electrode and the negative driving electrode is set to 180 °, and a phase difference of the sensing signals sensed by the positive sensing electrode and the negative sensing electrode is set to 180 °.
Optionally, the electrode is directly and fixedly connected with the base substrate and is electrically connected with an external contact arranged on the base substrate.
Optionally, the mems resonator comprises: the device comprises a base substrate, a cover substrate and a device layer, wherein the cover substrate is arranged at intervals with the base substrate, and the device layer is arranged between the base substrate and the cover substrate and is fixedly connected with the base substrate and the cover substrate respectively; each electrode comprises an electrode main body part and an electrode anchoring part, the resonance unit and the electrode main body part are arranged on the device layer, a first end of the electrode anchoring part is fixedly connected with the base substrate, a second end of the electrode anchoring part is connected with the electrode main body part to fix the electrode main body part, the first end of the electrode anchoring part is embedded into and penetrates through the base substrate to be exposed on the surface of the base substrate, and the external contact is arranged on the surface of the base substrate and is electrically connected with the electrode anchoring part through a connecting wire.
Optionally, the mems resonator further comprises a coupling section, and the resonance unit is connected to an outer end connection point of the coupling section, where the connection point is at a maximum amplitude of the coupling section.
Optionally, the coupling part is one of a cross structure, a square structure and a circular structure.
Optionally, the mems resonator further includes an anchor point, where the anchor point is disposed on the coupling portion and corresponds to a displacement node of the minimum amplitude of the coupling portion, and the resonant unit is suspended.
Optionally, a T-type bias device is disposed at the coupling center for providing bias voltage to the mems resonator.
Optionally, the shape structure of the resonance unit comprises one or more of a circular ring, a square ring, a triangular ring and a polygonal ring; the resonance mode of the resonance unit comprises one of a breathing mode, a Lame mode and a Wine glass mode.
As described above, the anti-symmetrically driven MEMS resonator of the present invention has the following beneficial effects:
aiming at the problems that the existing MEMS resonator is additionally provided with a plurality of electrode supporting structures, the process complexity is increased, the electrode stress is increased, and the parasitic capacitance is obviously increased due to the arrangement of the insulating supporting structures, the method changes the arrangement mode of the electrodes in the MEMS resonator, the electrodes are directly fixed with the base substrate, and the design of the traditional supporting structure is omitted, so that the process complexity is reduced, and the electrode stress is reduced; moreover, compared with an insulating supporting structure, air or vacuum has a smaller dielectric constant, and parasitic capacitance can be effectively reduced under the condition that the supporting structure is omitted. The external electrode does not need to be arranged, the resonator can balance internal parasitic capacitance, and the chip structure and the processing procedure are reduced.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is apparent that the drawings in the following description are only some of the embodiments of the present application.
FIG. 1 is a schematic diagram of a MEMS resonator of the prior art.
FIG. 2 is a schematic diagram of an anti-symmetrically driven MEMS resonator according to an embodiment of the invention.
FIG. 3 is a schematic diagram of another anti-symmetrically driven MEMS resonator according to an embodiment of the invention.
FIG. 4 is a schematic diagram of another anti-symmetrically driven MEMS resonator according to an embodiment of the invention.
FIG. 5 is a schematic diagram illustrating a driving method of an anti-symmetrically driven MEMS resonator according to an embodiment of the invention.
FIG. 6 is a schematic diagram showing a motion pattern of adjacent resonant cells having a 180 DEG phase difference in an anti-symmetrically driven MEMS resonator according to an embodiment of the present invention.
FIG. 7 is a schematic cross-sectional view of an anti-symmetrically driven MEMS resonator according to an embodiment of the invention.
Description of element numbers: 21. a resonance unit; 22. a coupling section; 23. an anchor point; 24. a T-type biaser; 20. an electrode; 20a, an electrode main body portion; 20b, an electrode anchoring portion; d+, positive drive electrode; d-, a negative drive electrode; s+, positive sense electrode; s-, a negative sense electrode; 1A, a base substrate; 1B, a device layer; 1C, covering the substrate; 30. and an external contact.
Description of the embodiments
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
It should be emphasized that the term "comprises/comprising" when used herein is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps or components.
Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments in combination with or instead of the features of the other embodiments.
As described in detail in the embodiments of the present invention, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present.
In the context of this application, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings rather than the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
As shown in fig. 2, the present embodiment provides an anti-symmetrically driven mems resonator, which includes a plurality of ring-shaped resonant cells 21 arranged in an array and a plurality of electrodes 20, where the plurality of electrodes 20 are disposed on the inner side and the outer side of the ring of the resonant cells 21. The electrodes 20 include driving electrodes and sensing electrodes for driving and sensing the resonance unit 21, respectively. The driving electrode gap is arranged at the inner side of the ring of one resonance unit 21 and the outer side of the ring of the other resonance unit 21 of the adjacent two resonance units 21, and the sensing electrode gap is arranged at the outer side of the ring of one resonance unit 21 and the outer side of the ring of the other resonance unit 21 of the adjacent two resonance units 21.
When the mems resonator is in operation, a dc voltage signal is applied to the resonating element 21 and a time-varying signal (e.g., an ac voltage signal) is applied to the drive electrode, thereby applying a time-varying electrostatic force between the drive electrode and the opposing or same charge established by the resonating element 21; at least a portion of the resonant unit 21 is driven by the time-varying electrostatic force to vibrate back and forth, so that the capacitance between the sensing electrode and the resonant unit 21 changes, and an induced signal (such as an ac current) is generated on the sensing electrode. The sense signal may then be transmitted to a processing circuit for processing to obtain a frequency signal, on the one hand, and the sense signal may be gain-transmitted to the driving electrode to maintain the resonance unit 21 vibrating, on the other hand.
As shown in fig. 2, the mems resonator further includes a coupling section 22, and the resonance unit 21 is connected to an outer end connection point of the coupling section 22, where the connection point is at a maximum amplitude of the coupling section 22. Specifically, the coupling parts 22 are connection components between adjacent resonance units 21, and the outer ends of the coupling parts 22 are respectively connected with the resonance units 21, and the resonance units 21 are arranged in an array manner through various flexible combination arrangements. The connection point of the coupling portion 22 and the resonance unit 21 is the maximum amplitude of the coupling portion 22, and the coupling portion 22 is located at the displacement node corresponding to the minimum amplitude of the coupling portion 22.
In some embodiments, the resonance mode of the resonance unit 21 includes one of a respiratory mode, a frame mode, and a Wine glass mode. The coupling portion 22 has the same eigenfrequency as the resonance unit 21 for mode coupling and energy transfer. The coupling portion 22 is one of a cross structure (shown in fig. 2), a square structure (shown in fig. 3), and a circular structure (shown in fig. 4).
The coupling part 22 of the resonator shown in fig. 2 is a cross structure, and the resonance units 21 may be disposed at four ends of the cross structure to form a corresponding resonance unit array, and at this time, the resonance units 21 may resonate in a breathing mode.
The coupling portion 22 of the resonator shown in fig. 3 has a square structure, and the connection positions of the coupling portion and the resonant unit 21 may be four sides of the square structure to form a corresponding resonant unit array, where the resonant unit 21 may resonate in a Lame mode.
The coupling portion 22 of the resonator shown in fig. 4 has a circular structure, and the resonant cells 21 may be disposed on two diametrically corresponding regions perpendicular to the circular structure to form a corresponding resonant cell array, and at this time, the resonant cells 21 may resonate in a wire glass mode.
As shown in fig. 2, the mems resonator further includes an anchor 23, where the anchor 23 is disposed on the coupling portion 22 and corresponds to a displacement node of the minimum amplitude of the coupling portion 22, and the resonating unit 21 is suspended.
As shown in fig. 2, a T-type Bias 24 (Bias-T) is provided at the center of the coupling portion 22 for providing Bias voltage to the mems resonator.
As shown in fig. 2, the shape structure of the resonance unit 21 includes one or more of a circular ring, a square ring, a triangular ring, and a polygonal ring. In one embodiment, the resonant cells 21 are shaped as rings.
In one embodiment, electrode 20 is directly fixedly connected to the base substrate and electrically connected to an external contact disposed on the base substrate.
Fig. 7 is a schematic cross-sectional structure of a mems resonator according to the present application, as shown in fig. 7, where the mems resonator is provided with a plurality of external contacts 30 so as to be connected with an interface of an IC circuit correspondingly, for example, for wire bonding, flip-chip bonding, or the like, so as to ensure that the mems resonator works normally. For several electrodes 20 in a mems resonator, electrical connection to external contact 30 is required to facilitate signal transmission. For example, the base substrate may be provided with connection lines for connecting the external contact 30 and the corresponding electrode 20.
With continued reference to fig. 7, the mems resonator may include a base substrate 1A, a device layer 1B, and a cap substrate 1C, the cap substrate 1C being spaced apart from the base substrate 1A, the device layer 1B being disposed between the base substrate 1A and the cap substrate 1C and being fixedly connected to the base substrate 1A and the cap substrate 1C, respectively, the three being sequentially stacked and forming a space for accommodating the resonant cell 21 and the electrode 20. The base substrate 1A mainly plays a supporting role, and a resonance unit and an electrode 20 working in cooperation with the resonance unit may be formed at the device layer 1B. The resonance unit can be fixed on the device layer 1B by means of an anchor point 23 connected with the resonance unit, one end of the anchor point 23 is fixedly connected with the base substrate 1A, and the other end supports and fixes the resonance unit. Each electrode 20 includes an electrode main body portion 20a and an electrode anchor portion 20B, the resonance unit and the electrode main body portion 20a are disposed on the device layer 1B, a first end of the electrode anchor portion 20B is fixedly connected with the base substrate 1A, a second end of the electrode anchor portion 20B is connected with the electrode main body portion 20a to fix the electrode main body portion 20a, in a specific example, the first end of the electrode anchor portion 20B is embedded in and penetrates through the base substrate 1A to be exposed on the surface of the base substrate 1A, and the external contact 30 is disposed on the surface of the base substrate 1A and is electrically connected with the electrode anchor portion 20B through a connection line. In this case, the electrode 20 may be directly fixedly connected to the base substrate 1A, so that no additional support structure is required, and process complexity and electrode stress can be effectively reduced.
It will be appreciated that air has a low dielectric constant relative to the insulating support structure, which can effectively reduce parasitic capacitance in the case of a omitted support structure. In addition, the electrode anchor portion 20b may be used as a part of the electrode 20, and a connection line provided in the base substrate 1A may directly connect the electrode anchor portion 20b and the external contact 30, thereby electrically connecting the electrode 20 and the external contact 30. The electrode 20 that sets up in this microelectromechanical system resonator not only can switch on in order to cooperate the resonance unit work, and electrode 20 self realizes fixed, support and electrically conductive effect, does not need to additionally set up insulating anchor point and fixes and support the electrode, also need not to set up conductive anchor point and electrically conduct, very big simplification the inner structure of resonator, be favorable to the structural optimization of resonator, can reduce parasitic capacitance and electrode stress, when improving the performance yield of resonator, also can practice thrift the cost of design and processing.
As shown in fig. 2, the mems resonator of the present example may be mirror symmetric along the axis L as a whole.
In embodiments of the present application, as shown in FIG. 2, the MEMS resonator may be configured to be differentially driven. I.e. the drive signals provided by the drive electrodes may comprise a positive drive signal and a negative drive signal. Wherein the phase difference of the positive drive signal and the negative drive signal may differ by 180 °. In this case, the several driving electrodes may include a positive driving electrode d+ for providing a positive driving signal to the resonance unit 21 and a negative driving electrode d+ for providing a negative driving signal to the resonance unit 21. The sensing signal sensed by the sensing electrode may include a positive sensing signal and a negative sensing signal. Wherein the phase difference of the positive sense signal and the negative sense signal may differ by 180 °. The positive sense signal may be in phase with the positive drive signal. The negative sense signal may be in phase with the negative drive signal. In this case, the several sensing electrodes may include a positive sensing electrode s+ generating a positive sensing signal and a negative sensing electrode S-generating a negative sensing signal.
As shown in fig. 2, in one specific example, the mems resonator comprises four resonant cells and eight electrodes 20, wherein the driving electrodes comprise two positive driving electrodes d+ and two negative driving electrodes D-, and the sensing electrodes comprise two positive sensing electrodes s+ and two negative sensing electrodes S-; wherein:
one positive driving electrode D+ is arranged on the inner side of the ring of the first resonance unit, the other positive driving electrode D+ is arranged on the outer side of the ring of the second resonance unit adjacent to the first resonance unit, and the two positive driving electrodes D+ are electrically connected;
one negative driving electrode D-is arranged on the inner side of the ring of the third resonance unit which is arranged opposite to the first resonance unit, the other negative driving electrode D-is arranged on the outer side of the ring of the fourth resonance unit which is arranged opposite to the second resonance unit, and the two negative driving electrodes D-are electrically connected;
one positive sensing electrode S+ is arranged on the inner side of the ring of the fourth resonance unit, the other positive sensing electrode S+ is arranged on the outer side of the ring of the third resonance unit, and the two positive sensing electrodes S+ are electrically connected;
one negative sensing electrode S-is arranged on the inner side of the ring of the second resonance unit, the other negative sensing electrode S-is arranged on the outer side of the ring of the first resonance unit, and the two negative sensing electrodes S-are electrically connected.
In one embodiment, the phase difference of the driving signals applied by the positive driving electrode d+ and the negative driving electrode D-is set to 180 °, and the phase difference of the sensing signals sensed by the positive sensing electrode s+ and the negative sensing electrode S-is set to 180 °.
FIG. 5 is a schematic diagram illustrating a driving method of an anti-symmetrically driven MEMS resonator according to an embodiment of the invention. As shown In fig. 5, the In electrode is an electrode located inside (inner ring) of the resonance unit ring, and the Out electrode is an electrode located outside (outer ring) of the resonance unit ring. The arrangement of the electrodes is shown in fig. 5. Electrically, positive driving electrodes are connected, and negative driving electrodes are connected; the positive sensing electrodes are connected, and the negative sensing electrodes are connected. In1 and Out1 are positive drive electrodes d+ and In2 and Out2 are negative drive electrodes D-In combination with the external trace form. In1 'and Out1' adjacent to the positive driving electrode D+ are negative sensing electrodes S-, and In2 'and Out2' are positive sensing electrodes S+, thereby realizing an anti-symmetric driving and sensing structure of the resonator In an anti-symmetric connection mode.
FIG. 6 is a schematic diagram showing a motion pattern of adjacent resonant cells having a 180 DEG phase difference in an anti-symmetrically driven MEMS resonator according to an embodiment of the present invention. As can be seen from fig. 6, the above-mentioned structure for implementing the anti-symmetric driving and sensing of the resonator in an anti-symmetric connection manner can make the motion modes of adjacent resonant units have a 180 ° phase difference.
Meanwhile, in the paths from the positive driving electrode D+ to the positive sensing electrode S+ and from the negative driving electrode D-to the negative sensing electrode S-, the parasitic capacitance (such as CTSV, cdrie, cpad, cout and Cin) of the positive driving electrode D+ and the negative driving electrode D-are the same as the capacitance to ground (CGnd), the parasitic capacitance (such as CTSV, cdrie, cpad, cout and Cin) of the positive sensing electrode S+ and the negative sensing electrode S-are the same as the capacitance to ground (CGnd), and the parasitic capacitance of the external electrode balance resonator is not required to be set. After the same processing deviation is experienced, the parasitic capacitance of the positive driving electrode D+ and the negative driving electrode D-is the same as the ground capacitance, the parasitic capacitance of the positive sensing electrode S+ and the negative sensing electrode S-is still the same as the ground capacitance, the sensitivity of the parasitic capacitance to the processing technology is low, and the matching degree of the two paths of parasitic capacitance parameters is improved.
As described above, the anti-symmetrically driven MEMS resonator of the present invention has the following beneficial effects:
the application provides an antisymmetric driving's resonator, this resonator adopts antisymmetric wiring and antisymmetric driving and sensing structure's mode under the differential drive condition, and this application need not to set up the plug-in electrode, and the resonator self can balance inside parasitic capacitance, reduces chip structure and processing procedure. The resonator can reduce sensitivity of parasitic capacitance to a processing technology and improve matching degree of positive and negative parasitic capacitance parameters.
The electrode of this application does not need additionally to set up insulating anchor point and fixes and support the electrode, also does not need to set up conductive anchor point and electrically conducts, very big simplification the inner structure of syntonizer, be favorable to the structural optimization of syntonizer, can reduce parasitic capacitance and electrode stress, when improving syntonizer performance yield, also can practice thrift the cost of design and processing.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims (10)

1. An anti-symmetrically driven micro-electromechanical system resonator is characterized by comprising a plurality of annular resonant units and a plurality of electrodes, wherein the annular resonant units are arranged in an array manner; the electrodes comprise driving electrodes and sensing electrodes which are respectively used for driving and sensing the resonance units; the driving electrode gap is arranged on the inner side of the ring of one resonance unit and the outer side of the ring of the other resonance unit in the two adjacent resonance units, and the sensing electrode gap is arranged on the outer side of the ring of the one resonance unit and the outer side of the ring of the other resonance unit in the two adjacent resonance units.
2. The anti-symmetrically driven mems resonator of claim 1, wherein: the MEMS resonator comprises four resonant units and eight electrodes, wherein the driving electrodes comprise two positive driving electrodes and two negative driving electrodes, and the sensing electrodes comprise two positive sensing electrodes and two negative sensing electrodes; wherein:
one positive driving electrode is arranged on the inner side of the ring of the first resonance unit, the other positive driving electrode is arranged on the outer side of the ring of the second resonance unit adjacent to the first resonance unit, and the two positive driving electrodes are electrically connected;
one negative driving electrode is arranged on the inner side of the ring of the third resonance unit which is opposite to the first resonance unit, the other negative driving electrode is arranged on the outer side of the ring of the fourth resonance unit which is opposite to the second resonance unit, and the two negative driving electrodes are electrically connected;
one positive sensing electrode is arranged on the inner side of the ring of the fourth resonance unit, the other positive sensing electrode is arranged on the outer side of the ring of the third resonance unit, and the two positive sensing electrodes are electrically connected;
one negative sensing electrode is arranged on the inner side of the ring of the second resonance unit, the other negative sensing electrode is arranged on the outer side of the ring of the first resonance unit, and the two negative sensing electrodes are electrically connected.
3. The anti-symmetrically driven mems resonator of claim 2, wherein: the phase difference of the driving signals applied by the positive driving electrode and the negative driving electrode is set to 180 °, and the phase difference of the sensing signals sensed by the positive sensing electrode and the negative sensing electrode is set to 180 °.
4. The anti-symmetrically driven mems resonator of claim 1, wherein: the electrode is directly and fixedly connected with the base substrate and is electrically connected with an external contact arranged on the base substrate.
5. The antisymmetrically driven mems resonator of claim 4, wherein: the mems resonator includes: the device comprises a base substrate, a cover substrate and a device layer, wherein the cover substrate is arranged at intervals with the base substrate, and the device layer is arranged between the base substrate and the cover substrate and is fixedly connected with the base substrate and the cover substrate respectively; each electrode comprises an electrode main body part and an electrode anchoring part, the resonance unit and the electrode main body part are arranged on the device layer, a first end of the electrode anchoring part is fixedly connected with the base substrate, a second end of the electrode anchoring part is connected with the electrode main body part to fix the electrode main body part, the first end of the electrode anchoring part is embedded into and penetrates through the base substrate to be exposed on the surface of the base substrate, and the external contact is arranged on the surface of the base substrate and is electrically connected with the electrode anchoring part through a connecting wire.
6. The anti-symmetrically driven mems resonator of claim 1, wherein: the MEMS resonator further comprises a coupling part, wherein the resonance unit is connected with an outer end connecting point of the coupling part, and the connecting point is the maximum amplitude of the coupling part.
7. The anti-symmetrically driven mems resonator of claim 6, wherein: the coupling part is one of a cross structure, a square structure and a round structure.
8. The anti-symmetrically driven mems resonator of claim 6, wherein: the MEMS resonator further comprises an anchor point which is arranged on the coupling part and corresponds to a displacement node of the minimum amplitude of the coupling part, and the resonance unit is suspended.
9. The anti-symmetrically driven mems resonator of claim 6, wherein: and a T-shaped biaser is arranged at the central coupling position of the coupling part and used for providing bias voltage for the micro-electromechanical system resonator.
10. The anti-symmetrically driven mems resonator of claim 1, wherein: the shape structure of the resonance unit comprises one or more of a circular ring, a square ring, a triangular ring and a polygonal ring; the resonance mode of the resonance unit comprises one of a breathing mode, a Lame mode and a Wine glass mode.
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