CN103338022A - Frequency-adjustable MEMS (Micro-Electromechanical System) resonator - Google Patents
Frequency-adjustable MEMS (Micro-Electromechanical System) resonator Download PDFInfo
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- CN103338022A CN103338022A CN2013103069606A CN201310306960A CN103338022A CN 103338022 A CN103338022 A CN 103338022A CN 2013103069606 A CN2013103069606 A CN 2013103069606A CN 201310306960 A CN201310306960 A CN 201310306960A CN 103338022 A CN103338022 A CN 103338022A
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Abstract
The invention discloses a frequency-adjustable MEMS (Micro-Electromechanical System) resonator, which comprises a resonant unit and a plurality of electrodes, wherein the resonant unit has a circular-disk, annular or symmetrical polygonal structure; the center of the resonant unit is a vibration displacement node; the resonant unit is supported by a support anchor point positioned on the displacement node; the surface of the resonant unit is provided with a plurality of micro-structures; the electrodes are positioned on the periphery of or above the resonant; gaps are formed among the electrodes; and each electrode is directly contacted with or kept a certain gap away from the resonant unit. According to the frequency-adjustable MEMS resonator, a plurality of different frequency outputs are realized under the condition of not increasing the structure complexity.
Description
Technical field
The present invention relates to radio-frequency micro electromechanical (RF MEMS) technical field, more particularly, the present invention relates to the MEMS resonator of radio-frequency micro-machinery resonating device, particularly a kind of frequency adjustable.
Background technology
Along with wireless communication system towards low-power consumption, small size, multifunctional direction development and raising that level of integrated system is required, press for the structure of development of new to replace traditional wireless transceiver system.The radio frequency resonant device has application demand widely as the filtering in the wireless receiving and dispatching structure and frequency reference device.The radio frequency resonant device that is most widely used at present comprises quartz, pottery, surface acoustic wave (SAW) and bulk acoustic wave (FBAR) device, they can reach RF and the required high Q value (500-10000) of IF filter, but they all are (off-chip) discrete components outside the sheet, are unfavorable for the system integration and miniaturization.And the MEMS device since have small size, low cost, low-power consumption, high Q value, high linearity, with advantages such as IC technology is integrated, be considered to replace one of outer discrete component best choice of traditional sheet, for realizing that radio communication is in the extensive use aspect miniaturization, low-power consumption, the portable set provide the foundation [1].
In order to adapt to future broadband wireless communication systems to multiband, multi-functional, multimodal application demand, need the frequency-selecting device self to have good frequency characteristic, reduce the complexity of structure.And at the application demand of multiband, need to set up resonator array [2] or filter array [3] usually, to realize system-on-a-chip, so both increased the complexity of system, improve cost again, therefore, needed the new structure of exploitation to satisfy the application demand of multiband.
To this, the present invention proposes the adjustable MEMS resonator of a kind of new type of frequency, utilize this structure can realize the output of different resonance frequencys.Number by changing micro-structural, shape size and with the relative position of drive electrode, realize the different frequency output of resonator.In addition, by increasing number of poles, excitation high frequent vibration mode obtains high-frequency output, by changing the connected mode between the electrode, encourages the not resonance mode of same order, obtains the resonance frequency output of different rank.Utilize this resonator provided by the invention, can reduce the complexity of wireless communication system, increase substantially the integrated level of system, thereby further reduce system cost.
Citing document:
【1】C.T.-C.Nguyen，Vibrating?RF?MEMS?overview：applications?to?wireless?communications，in?Proc.SPIE：Micromachin.Microfabric.Process?Technol.，San?Jose，CA，vol.5715，Jan.22-27，2005，pp.11-25.
【2】H.Chandrahalim?and?S.A.Bhave，Digitally-tunable?MEMS?filter?using?mechanically-coupled?resonator?array，in?Proc.IEEE21st?Int.Conf.Micro?Electro?Mech.Syst.(MEMS’08)，Jan.13-17，2008，pp.1020-1023.
【3】C.T.-C.Nguyen，MEMS?technologies?and?devices?for?single-chip?RF?front-ends(invited)，Tech.Dig.，CICMT’06，Denver，Colorado，April25-26，2006.
Summary of the invention
In view of this, main purpose of the present invention is to propose the adjustable MEMS resonator of a kind of new type of frequency, under the situation that does not increase structural complexity, realizes multiple different frequency output.
For achieving the above object, the present invention proposes a kind of MEMS resonator of frequency adjustable, comprising:
One resonant element is disc, annular or symmetrical polygonized structure, and its center is the vibration displacement node, and this resonant element is by a support anchor points support that is positioned at displacement node place, and the surface of this resonant element is provided with a plurality of micro-structurals;
A plurality of electrodes, it is positioned at periphery or the top of resonant element, and a gap is arranged between each electrode, directly contacts between each electrode and the resonant element or a gap arranged.
From technique scheme as can be seen, the invention has the beneficial effects as follows:
1, the present invention has realized the flexible of resonance frequency by number, position and the shape size of control micro-structural, and under the situation that does not reduce device size, realizes high frequency output.
2, the present invention is by simple microstructure design and electrode interconnection, under the situation that does not increase structure complexity, realized the resonator of multiple different frequency output, these simple construction units will substitute resonator or the filter array in the wireless communication system, can improve the integrated level of wireless communication system greatly, reduce complexity and the cost of manufacture of system.
Description of drawings
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with embodiment and accompanying drawing, the present invention is described in more detail, wherein:
The structural representation of the MEMS resonator of the frequency adjustable that Fig. 1, Fig. 2, Fig. 3 propose for the present invention;
Fig. 4 is the structural representation of disc MEMS resonator when the electrode to no microstructure area correspondence applies excitation;
Fig. 5 is the schematic diagram of the resonance mode of Fig. 4;
Fig. 6 is the structural representation of disc MEMS resonator when the electrode to the microstructure area correspondence applies excitation;
Fig. 7 is the schematic diagram of Fig. 6 resonance mode.
Embodiment
The invention provides a kind of MEMS resonator of frequency adjustable, as Fig. 1, Fig. 2, shown in Figure 3, specifically comprise:
One resonant element 1, be disc, annular or symmetrical polygonized structure, wherein annular resonant element 1 is under the situation that does not reduce physical dimension, can obtain higher resonance frequency, its center is vibration displacement node 11, this resonant element 1 is supported by a support anchor point 12 that is positioned at displacement node 11 places, the material of this resonant element 1 is silica-base material, piezoelectric or sapphire, the surface of described resonant element 1 is provided with a plurality of micro-structurals 13, the radius circumference that waits along resonant element 1 evenly distributes, and the micro-structural 13 on this resonant element 1 is aperture or dentalation, by changing the relative position of micro-structural 13 and drive electrode, to encourage different resonance modes, thereby obtain different frequency output, change the number of micro-structural, shape size and the position in resonant element, thus different frequency-tuning ranges obtained.
A plurality of electrodes 2, it is positioned at periphery or the top of resonant element 1, one gap is arranged between each electrode, directly contact between each electrode and the resonant element 1 or a gap arranged, these electrode 2 materials are metal or doped semiconductor materials, and the gap between described electrode 2 and the resonant element 1 is that air is filled or solid state medium filling or air and solid state medium are filled jointly.Can adopt the combination drive mode of static driving, Piezoelectric Driving or static-piezoelectricity between electrode and the resonant element.
The present invention has realized the flexible of resonance frequency by number, position and the shape size of control micro-structural, and under the situation that does not reduce device size, realizes high frequency output.
Be that example is introduced architectural feature in detail with disc MEMS resonator below, as Fig. 4 and Fig. 5, Fig. 6 and shown in Figure 7, be respectively the structural representation of disc MEMS resonator when the electrode of no microstructure area correspondence is applied excitation and the structural representation the when electrode that the microstructure area correspondence is arranged applied excitation, comprise:
Disc resonant element 1, radius 18um, thickness 3um, the material of resonant element 1 is polysilicon, the surface is provided with 6 fan-shaped aperture micro-structurals 13, outer radius is respectively 4um and 8um in the aperture, the aperture center is that the radius circumference that waits of 10um evenly distributes along the radius of resonant element 1, a plurality of electrodes 2 are positioned at the periphery of resonant element 1, corresponding to microstructure area 6 and no microstructure area 7 on the resonant element, a gap are arranged between each electrode successively, a plurality of electrodes have constituted drive electrode 8 and the detecting electrode 9 of resonant element, adopt the static transmission between electrode and the resonant element, by changing the relative position of micro-structural 13 and drive electrode 8, to obtain different frequency output.
When drive electrode 8 was applied pumping signal, this resonant element 1 was operated in 3 rank Echo Wall mode of oscillations (3
RdWGM), when the electrode to no microstructure area 7 correspondences applies excitation, as shown in Figure 4, micro-structural 13 is in the modal displacement zone, and electrode 9 detects output frequency 140MHz, when the electrode to microstructure area 6 correspondences applies excitation, as shown in Figure 6, micro-structural 13 is in big displacement region, and electrode 9 detects output frequency 145MHz, and the frequency-splitting size of Fig. 4 and structure output shown in Figure 6 is relevant with number, shape size and the position in resonant element 1 of micro-structural 13.
Increase the number of electrode 2 and micro-structural 13, can encourage the more mode of oscillation of high-order (the above Echo Wall mode in 3 rank), thereby obtain higher resonance frequency (＞200MHz), in addition, by changing the connected mode between the electrode, can encourage the not resonance mode of same order, obtain the resonance frequency output of different rank.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., all should be included in protection scope of the present invention.
Claims (6)
1. the MEMS resonator of a frequency adjustable comprises:
One resonant element is disc, annular or symmetrical polygonized structure, and its center is the vibration displacement node, and this resonant element is by a support anchor points support that is positioned at displacement node place, and the surface of this resonant element is provided with a plurality of micro-structurals;
A plurality of electrodes, it is positioned at periphery or the top of resonant element, and a gap is arranged between each electrode, directly contacts between each electrode and the resonant element or a gap arranged.
2. the MEMS resonator of frequency adjustable according to claim 1, wherein the material of resonant element is silica-base material, piezoelectric or sapphire.
3. the MEMS resonator of frequency adjustable according to claim 1, wherein the micro-structural on the resonant element evenly distributes along the radius circumference that waits of resonant element.
4. the MEMS resonator of frequency adjustable according to claim 3, wherein the micro-structural on the resonant element is aperture or dentalation, by changing the relative position of micro-structural and drive electrode, to encourage different resonance modes, thereby obtain different frequency output, change number, shape size and the position in resonant element of micro-structural, thereby obtain different frequency-tuning ranges.
5. the MEMS resonator of frequency adjustable according to claim 1, wherein electrode material is metal or conductiving doping silicon.
6. the MEMS resonator of frequency adjustable according to claim 5, wherein the gap between electrode and the resonant element is that air is filled or solid state medium filling or air and solid state medium are filled jointly.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103716009A (en) * | 2013-12-23 | 2014-04-09 | 江苏物联网研究发展中心 | Mems resonator |
| CN103762956A (en) * | 2013-12-31 | 2014-04-30 | 中国科学院半导体研究所 | Frequency switchable micro mechanical resonator and manufacture method thereof |
| CN103913159A (en) * | 2014-04-29 | 2014-07-09 | 重庆大学 | Tunnel type MEMS (Micro-electromechanical Systems) gyroscope |
| CN107655595A (en) * | 2017-10-19 | 2018-02-02 | 机械工业仪器仪表综合技术经济研究所 | Microcomputer electric resonance structure, resonator and pressure sensor |
| CN104617360B (en) * | 2013-11-05 | 2018-04-27 | 中国科学院半导体研究所 | The MEMS filter of frequency-adjustable |
| CN108955662A (en) * | 2018-04-27 | 2018-12-07 | 苏州大学 | Resonator gyroscope substantially symmetrical about its central axis with frequency difference adjustment structure |
| CN110190826A (en) * | 2019-05-31 | 2019-08-30 | 厦门市三安集成电路有限公司 | Resonance film layer, resonator and filter |
| CN112845002A (en) * | 2020-12-31 | 2021-05-28 | 武汉大学 | MEMS broadband ultrasonic transducer array |
| CN116470880A (en) * | 2023-06-20 | 2023-07-21 | 麦斯塔微电子(深圳)有限公司 | Anti-symmetrically driven mems resonator |
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| CN102388533A (en) * | 2009-04-09 | 2012-03-21 | Nxp股份有限公司 | Mems resonator |
| US20120105173A1 (en) * | 2009-05-29 | 2012-05-03 | Infineon Technologies Ag | MEMS Device |
| US20130134829A1 (en) * | 2010-08-11 | 2013-05-30 | Nihon Dempa Kogyo Co., Ltd. | Disk type mems resonator |
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| US20120013412A1 (en) * | 2009-01-15 | 2012-01-19 | Bernhard Winkler | Mems resonator devices |
| CN102388533A (en) * | 2009-04-09 | 2012-03-21 | Nxp股份有限公司 | Mems resonator |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104617360B (en) * | 2013-11-05 | 2018-04-27 | 中国科学院半导体研究所 | The MEMS filter of frequency-adjustable |
| CN103716009B (en) * | 2013-12-23 | 2017-06-23 | 汇隆电子（金华）有限公司 | Mems resonator |
| CN103716009A (en) * | 2013-12-23 | 2014-04-09 | 江苏物联网研究发展中心 | Mems resonator |
| CN103762956A (en) * | 2013-12-31 | 2014-04-30 | 中国科学院半导体研究所 | Frequency switchable micro mechanical resonator and manufacture method thereof |
| CN103913159B (en) * | 2014-04-29 | 2016-05-18 | 重庆大学 | A kind of tunnel type MEMS gyroscope |
| CN103913159A (en) * | 2014-04-29 | 2014-07-09 | 重庆大学 | Tunnel type MEMS (Micro-electromechanical Systems) gyroscope |
| CN107655595A (en) * | 2017-10-19 | 2018-02-02 | 机械工业仪器仪表综合技术经济研究所 | Microcomputer electric resonance structure, resonator and pressure sensor |
| CN107655595B (en) * | 2017-10-19 | 2020-01-14 | 机械工业仪器仪表综合技术经济研究所 | Micro-electromechanical resonance structure, resonator and pressure sensor |
| CN108955662A (en) * | 2018-04-27 | 2018-12-07 | 苏州大学 | Resonator gyroscope substantially symmetrical about its central axis with frequency difference adjustment structure |
| CN110190826A (en) * | 2019-05-31 | 2019-08-30 | 厦门市三安集成电路有限公司 | Resonance film layer, resonator and filter |
| CN112845002A (en) * | 2020-12-31 | 2021-05-28 | 武汉大学 | MEMS broadband ultrasonic transducer array |
| CN112845002B (en) * | 2020-12-31 | 2022-01-14 | 武汉大学 | MEMS broadband ultrasonic transducer array |
| CN116470880A (en) * | 2023-06-20 | 2023-07-21 | 麦斯塔微电子(深圳)有限公司 | Anti-symmetrically driven mems resonator |
| CN116470880B (en) * | 2023-06-20 | 2023-09-19 | 麦斯塔微电子(深圳)有限公司 | Anti-symmetrically driven mems resonator |
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