CN116454191A - Inorganic light-emitting diode matrix display device and manufacturing method thereof - Google Patents
Inorganic light-emitting diode matrix display device and manufacturing method thereof Download PDFInfo
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- CN116454191A CN116454191A CN202310439152.0A CN202310439152A CN116454191A CN 116454191 A CN116454191 A CN 116454191A CN 202310439152 A CN202310439152 A CN 202310439152A CN 116454191 A CN116454191 A CN 116454191A
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
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- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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Abstract
The invention belongs to the technical field of design display, and particularly relates to an inorganic light-emitting diode matrix display device and a manufacturing method thereof. The matrix display device comprises an inorganic light-emitting diode pixel display device substrate and a driving device substrate, wherein the inorganic light-emitting diode pixel display device substrate comprises an epitaxial wafer, an ITO film layer and a metal film layer, the ITO film layer is deposited on the epitaxial wafer, and a discontinuous metal film layer is deposited on the ITO film layer; the driving device substrate is provided with a micro-bump array, and the micro-bump array is connected with the metal film layer in a bonding way; the epitaxial wafer comprises a substrate, and a buffer layer, an unintentionally doped gallium nitride layer, an N-type gallium nitride layer, a multi-layer quantum well and a P-type gallium nitride layer are sequentially epitaxially grown on the substrate. The inorganic light-emitting diode pixel device side does not need to be subjected to graphical processing before bonding connection, so that the requirement on instrument bonding precision can be greatly reduced.
Description
Technical Field
The invention belongs to the technical field of design display, and particularly relates to an inorganic light-emitting diode matrix display device and a manufacturing method thereof.
Background
The inorganic light-emitting diode has the advantages of self-luminescence, high brightness, high response speed, strong environmental adaptability, capability of processing by using a semiconductor technology and the like, and is particularly suitable for micro-display products such as projectors, augmented reality and the like which need high brightness and high pixel density.
At present, when the inorganic light emitting diode is used for a micro projector and a micro display product, common processing modes are as follows: firstly, respectively manufacturing a patterned inorganic light-emitting diode pixel device substrate and a driving device substrate by using a micromachining method, and then carrying out alignment bonding connection; or before the inorganic light-emitting diode pixel device is manufactured, firstly, bonding an epitaxial wafer and a driving device to peel off a substrate, and then manufacturing the inorganic light-emitting diode pixel by using a micro-processing method, wherein the bonding alignment precision requirement is more severe along with the improvement of the pixel density in the two methods, so that the bonding process is difficult; in the second method, when pixels are manufactured, the process steps are complicated, and the production cost of the product is increased. Based on this, an inorganic light emitting diode matrix display device and a method of manufacturing the same are urgently needed.
Disclosure of Invention
In order to overcome the problems in the prior art, the invention provides an inorganic light-emitting diode matrix display device and a manufacturing method thereof.
The technical scheme for solving the technical problems is as follows:
an inorganic light-emitting diode matrix display device comprises an inorganic light-emitting diode pixel display device substrate and a driving device substrate, wherein the inorganic light-emitting diode pixel display device substrate comprises an epitaxial wafer, an Indium Tin Oxide (ITO) film layer and a metal film layer, the epitaxial wafer comprises a substrate, a buffer layer, an unintended doped gallium nitride layer, an N-type gallium nitride layer, a multi-layer quantum well and a P-type gallium nitride layer are sequentially grown on the substrate, the ITO film layer is deposited on the epitaxial wafer, and a discontinuous metal film layer is deposited on the ITO film layer; the driving device substrate is provided with a micro-bump array, and the micro-bump array is connected with the metal film layer in a bonding way.
Further, the substrate is a sapphire substrate or a silicon/silicon carbide substrate.
Further, the substrate side of the driving device is a passive matrix driving device or an active matrix driving device.
The invention also provides a manufacturing method of the inorganic light-emitting diode matrix display device, which comprises the following steps:
step 1, sequentially growing a buffer layer, an unintentionally doped gallium nitride layer, an N-type gallium nitride layer, a multiple quantum well layer and a P-type gallium nitride layer on a substrate on the substrate side of an inorganic light emitting diode pixel display device to obtain an epitaxial wafer; depositing an ITO film layer and a metal film layer on the epitaxial wafer;
step 2, carrying out pixel imaging treatment on the drive device substrate to manufacture a micro-bump array for bonding connection;
step 3, bonding and connecting the metal film layer of the inorganic light-emitting diode pixel display device substrate and the micro-bump array of the driving device substrate;
and 4, ionizing the hydrogen-containing element gas by using induction plasma, introducing the ionized gas into the bonded device, and performing heat treatment.
Further, the step 1 further includes:
etching partial metal film layer and ITO film of the common electrode area of the pixel device side of the inorganic light-emitting diode by using ion beam etching and wet etching;
using induction plasma etching to expose the P-type gallium nitride layer, the multiple quantum well layer and part of the N-type gallium nitride layer in the partial metal removal region of the common electrode region of the pixel device side of the inorganic light emitting diode, so that the high-conductivity region of the N-type gallium nitride layer is exposed;
and depositing a plurality of layers of metal connection N-type gallium nitride layers in the common electrode area of the pixel device side of the inorganic light-emitting diode.
Further, in the step 4, the hydrogen-containing element gas is ionized by the induction plasma and then is introduced into the bonded device, and the bonded device is subjected to heat treatment, which specifically comprises the following steps: and (3) ionizing the hydrogen-containing element gas by using inductively coupled plasma, and then introducing the ionized hydrogen-containing element gas into the device after bonding connection of the inorganic light-emitting diode pixel display device substrate and the driving device substrate is completed, so as to selectively passivate the P-type gallium nitride layer.
Further, the thickness of the ITO film layer is 50-1000 nanometers.
Further, the material of the metal film layer is one or more of Ni, ag, au, pt.
Further, the thickness of the metal film layer is 100-1000 nanometers.
Further, the hydrogen-containing gas is introduced in the step 4, which includes but is not limited to: hydrogen, ammonia, methane.
Compared with the prior art, the invention has the following technical effects:
the invention does not carry out imaging treatment on the epitaxial wafer on the substrate side of the inorganic light-emitting diode pixel device, and only deposits a very thin ohmic contact ITO film and a metal film for bonding connection; performing pixel imaging treatment on the substrate side of the driving device, manufacturing a micro bump array for bonding connection, and then performing bonding connection under certain atmosphere, temperature and pressure conditions; because the metal film of the inorganic light-emitting diode pixel substrate side bond is very thin, the metal film of the inorganic light-emitting diode pixel substrate side around the micro-bump array is absorbed in the process of alloying bonding connection, so that the metal of the inorganic light-emitting diode pixel substrate side is patterned to form a self-aligned mask in the hydrogen ion treatment process, and then hydrogen-containing element gas treated by induction plasma is introduced to selectively passivate the P-layer gallium nitride of the epitaxial wafer, so that part of the P-layer gallium nitride is converted into high resistance, and the cost is reduced; in addition, the inorganic light-emitting diode pixel device side does not need to be subjected to graphical processing before bonding connection, so that the requirement on instrument bonding precision can be greatly reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings that are required to be used in the description of the embodiments will be briefly described below. It is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained from these drawings without inventive effort for a person skilled in the art. The thicknesses of portions of layers and regions in the drawings are exaggerated for clarity, for example, for convenience of description, and thicknesses and dimensions of elements in the drawings are arbitrarily shown, and thus, the technical scope described is not limited by the drawings.
Fig. 1 is a schematic cross-sectional view of an inorganic light emitting diode matrix display device according to an embodiment of the present invention;
FIG. 2 is a schematic plan view showing a bonding front surface of an inorganic light emitting diode pixel substrate side in an inorganic light emitting diode matrix display device according to an embodiment of the present invention;
FIG. 3 is a schematic front plan view showing a bonding connection of a driving device side of an inorganic light emitting diode matrix display device according to an embodiment of the present invention;
FIG. 4 is a flow chart showing an embodiment 2 of a method for fabricating an inorganic light emitting diode matrix display device of the present invention;
FIG. 5 is a schematic flow chart of an embodiment 3 of a method for fabricating an inorganic light emitting diode matrix display device according to the present invention;
FIG. 6 is a flowchart of an embodiment 4 of a method for fabricating an inorganic light emitting diode matrix display device of the present invention;
fig. 7 is a schematic flow chart of an embodiment 5 of a method for fabricating an inorganic light emitting diode matrix display device according to the present invention.
The components in the figure are identified as follows:
1. a driving device substrate; 2. a micro bump array; 3. a metal thin film layer; 4. a P-type gallium nitride layer; 5. a P-type gallium nitride layer partition; 6. a multi-layer quantum well; 7. an N-type gallium nitride layer; 8. an unintentionally doped gallium nitride layer; 9. a buffer layer; 10. a substrate; 11. an inorganic light emitting diode pixel substrate effective display area; 12. an inorganic light emitting diode pixel substrate common electrode; 13. driving the effective display area of the device substrate; 14. the device substrate common electrode is driven.
Detailed Description
The principles and features of the present invention are described below with reference to the drawings, the examples are illustrated for the purpose of illustrating the invention and are not to be construed as limiting the scope of the invention.
The present invention is directed to an inorganic light emitting diode matrix display device capable of satisfying the needs of miniaturized projectors and micro-display products in terms of brightness and pixel density, and a method of manufacturing the same.
Example 1
Referring to fig. 1-3, the embodiment discloses an inorganic light emitting diode matrix display device, which comprises an inorganic light emitting diode pixel display device substrate and a driving device substrate, wherein the inorganic light emitting diode pixel display device substrate comprises an epitaxial wafer, an ITO film layer and a metal film layer 3, the epitaxial wafer comprises a substrate 10, and a buffer layer 9, an unintentionally doped gallium nitride layer 8, an N-type gallium nitride layer 7, a multi-layer quantum well 6 and a P-type gallium nitride layer 4 are sequentially grown on the substrate 10, the ITO film layer is deposited on the P-type gallium nitride layer 4 of the epitaxial wafer, and a discontinuous metal film layer is deposited on the ITO film layer; the driving device substrate 1 is provided with a micro-bump array 2, and the micro-bump array 2 is connected with the metal film layer 3 in a bonding way.
The substrate is a sapphire substrate or a silicon/silicon carbide substrate.
The substrate side of the driving device is a passive matrix driving device or an active matrix driving device.
The inorganic light-emitting diode pixel substrate effective display area 11 is a display pixel area of the epitaxial wafer substrate, namely a light-emitting area; the effective display area 11 of the inorganic light-emitting diode pixel substrate and the effective display area 13 of the driving device substrate can be bonded to form a whole active driving display device, and the common electrode 14 of the driving device substrate is a common electrode of the driving device and acts as the common electrode 12 of the inorganic light-emitting diode pixel substrate.
Example 2
Referring to fig. 4, the embodiment discloses a method for manufacturing an inorganic light emitting diode matrix display device, which comprises the following steps:
step 1, manufacturing a substrate side of an inorganic light emitting diode pixel device, namely: sequentially growing a buffer layer, an unintentionally doped gallium nitride layer, an N-type gallium nitride layer, a multiple quantum well layer and a P-type gallium nitride layer on a sapphire substrate at the substrate side of the inorganic light-emitting diode pixel display device to obtain an epitaxial wafer; depositing an ITO film layer on the epitaxial wafer by using magnetron sputtering or electron beam evaporation, keeping the square resistance of the ITO film layer larger, and keeping the thickness of the ITO film layer to be 50-1000 nanometers; the buffer layer is made of low-temperature GaN or AlN, and the thickness is 10-100 nanometers; the thickness of the unintentionally doped gallium nitride layer is 1-4 micrometers.
Then, electron beam evaporation or magnetron sputtering is used to deposit a plurality of metal film layers, and the thickness of the metal film layers is ensured to be discontinuous. The material of the metal film layer is one or more of Ni, ag, au, pt, and the thickness of the metal film layer is 100-1000 nanometers.
Further, etching part of the metal film layer and the ITO film of the common electrode area on the pixel device side of the inorganic light-emitting diode by using ion beam etching and wet etching, wherein the common electrode material is one or more of Au, pt, ni and Al.
And further, using induction plasma etching to expose the P-type gallium nitride layer, the multiple quantum well layer and part of the N-type gallium nitride layer in the partial metal removal region of the common electrode region of the pixel device side of the inorganic light emitting diode, so that the high-conductivity region of the N-type gallium nitride layer is exposed.
Further, a plurality of metal connection N-type gallium nitride layers are deposited in the region of the common electrode 12 on the pixel device side of the inorganic light emitting diode, so that a negative electrode on the pixel device side of the inorganic light emitting diode is formed.
Step 2, manufacturing a substrate side of the driving device, wherein the manufacturing method comprises the following steps: the pixel driving circuit and the peripheral integrated circuit are manufactured by using standard semiconductor technology, wherein the pixel driving circuit comprises two or more drivers and one or more capacitors, and the peripheral circuit comprises a field effect transistor or a thin film transistor, a diode, a resistor and the like; an array of micro-bumps is then fabricated on the top electrode of the pixel circuit, the micro-bump comprising a pixel or a plurality of sub-pixels.
And 3, cutting the inorganic light-emitting diode pixel device substrate and the driving device substrate into single chips, and using bonding equipment to bond and connect the cut single inorganic light-emitting diode pixel chip and the cut single driving device chip or the non-cut inorganic light-emitting diode pixel device wafer and the non-cut driving device wafer under certain temperature, pressure and atmosphere conditions to form an alloy layer serving as a self-alignment mask for hydrogen ion treatment.
And 4, ionizing the hydrogen-containing element gas by using induction plasma, introducing the ionized gas into the bonded device, and performing heat treatment.
Specifically, after the hydrogen-containing element gas is ionized by using inductively coupled plasma, the ionized hydrogen-containing element gas is introduced into a device after bonding connection of an inorganic light-emitting diode pixel display device substrate and a driving device substrate is completed, and a P-type gallium nitride layer is selectively passivated, so that part of P-type gallium nitride is converted into high resistance, and current collapse is prevented; and then encapsulating the device with a material such as epoxy.
Example 3
Referring to fig. 5, the embodiment discloses a method for manufacturing an inorganic light emitting diode matrix display device, which comprises the following steps:
step 1, manufacturing a substrate side of an inorganic light emitting diode pixel device, namely: sequentially growing a buffer layer, an unintentionally doped gallium nitride layer, an N-type gallium nitride layer, a multiple quantum well layer and a P-type gallium nitride layer on a silicon or silicon carbide substrate at the substrate side of the inorganic light emitting diode pixel display device to obtain an epitaxial wafer; and depositing an ITO film layer on the epitaxial wafer by using magnetron sputtering or electron beam evaporation, and keeping the square resistance of the ITO film layer to be larger and the thickness of the ITO film layer to be 50-1000nm.
Then, electron beam evaporation or magnetron sputtering is used to deposit a plurality of metal film layers, and the thickness of the metal film layers is ensured to be discontinuous.
Further, ion beam etching and wet etching are used to etch away part of the metal film layer and the ITO film of the common electrode area on the pixel device side of the inorganic light emitting diode.
And further, using induction plasma etching to expose the P-type gallium nitride layer, the multiple quantum well layer and part of the N-type gallium nitride layer in the partial metal removal region of the common electrode region of the pixel device side of the inorganic light emitting diode, so that the high-conductivity region of the N-type gallium nitride layer is exposed.
Further, depositing a plurality of layers of metal connection N-type gallium nitride layers on the common electrode area of the pixel device side of the inorganic light-emitting diode to form a cathode of the pixel device side of the inorganic light-emitting diode.
Step 2, manufacturing a substrate side of the driving device, wherein the manufacturing method comprises the following steps: first, a pixel driving circuit and a peripheral integrated circuit are fabricated using standard semiconductor processes, wherein the pixel driving circuit includes two or more drivers and one or more capacitors, and the peripheral circuit includes a field effect transistor or a thin film transistor, a diode, a resistor, and the like.
An array of micro-bumps is then fabricated on the top electrode of the pixel circuit, the micro-bump comprising a pixel or a plurality of sub-pixels.
Step 3, cutting the inorganic light-emitting diode pixel device substrate and the driving device substrate into single chips;
and bonding and connecting the cut single inorganic light-emitting diode pixel chip and the cut single driving device chip or the non-cut inorganic light-emitting diode pixel device wafer and the non-cut driving device wafer under certain temperature, pressure and atmosphere conditions by using bonding equipment to form an alloy layer serving as a self-aligned mask for hydrogen ion treatment.
And 4, introducing hydrogen-containing element gas into the bonded device after induction plasma power, and performing heat treatment.
Specifically, after the hydrogen-containing element gas is ionized by using inductively coupled plasma, the ionized hydrogen-containing element gas is introduced into an inorganic light-emitting diode pixel display device substrate and a driving device substrate, and after bonding connection is completed, the P-type gallium nitride layer is selectively passivated.
Then, removing the silicon or silicon nitride substrate, and improving the light extraction efficiency; and encapsulating the device by using materials such as epoxy resin and the like to form a cover glass cover plate.
Example 4
Referring to fig. 6, the embodiment discloses a method for manufacturing an inorganic light emitting diode matrix display device, which comprises the following steps:
step 1, manufacturing a substrate side of an inorganic light emitting diode pixel device, namely: sequentially growing a buffer layer, an unintentionally doped gallium nitride layer, an N-type gallium nitride layer, a multiple quantum well layer and a P-type gallium nitride layer on a sapphire substrate at the substrate side of the inorganic light-emitting diode pixel display device to obtain an epitaxial wafer; and depositing an ITO film layer on the epitaxial wafer by using magnetron sputtering or electron beam evaporation, and keeping the square resistance of the ITO film layer to be larger and the thickness of the ITO film layer to be 50-1000nm.
Then, electron beam evaporation or magnetron sputtering is used to deposit a plurality of metal film layers, and the thickness of the metal film layers is ensured to be discontinuous.
Further, ion beam etching and wet etching are used to etch away part of the metal film layer and the ITO film of the common electrode area on the pixel device side of the inorganic light emitting diode.
And further, using induction plasma etching to expose the P-type gallium nitride layer, the multiple quantum well layer and part of the N-type gallium nitride layer in the partial metal removal region of the common electrode region of the pixel device side of the inorganic light emitting diode, so that the high-conductivity region of the N-type gallium nitride layer is exposed.
Further, depositing a plurality of layers of metal connection N-type gallium nitride layers on the common electrode area of the pixel device side of the inorganic light-emitting diode to form a cathode of the pixel device side of the inorganic light-emitting diode.
Step 2, manufacturing a substrate side of the driving device, wherein the manufacturing method comprises the following steps: first, a pixel driving circuit and a peripheral integrated circuit are fabricated using standard semiconductor processes, wherein the pixel driving circuit includes two or more drivers and one or more capacitors, and the peripheral circuit includes a field effect transistor or a thin film transistor, a diode, a resistor, and the like.
An array of micro-bumps is then fabricated on the top electrode of the pixel circuit, the micro-bump comprising a pixel or a plurality of sub-pixels.
And 3, bonding and connecting the inorganic light-emitting diode pixel device wafer and the driving device wafer by using bonding equipment under certain temperature, pressure and atmosphere conditions to form an alloy layer serving as a self-aligned mask for hydrogen ion treatment.
And 4, introducing hydrogen-containing element gas into the bonded device after induction plasma power, and performing heat treatment.
Specifically, after the hydrogen-containing element gas is ionized by using inductively coupled plasma, the ionized hydrogen-containing element gas is introduced into an inorganic light-emitting diode pixel display device substrate and a driving device substrate, and after bonding connection is completed, the P-type gallium nitride layer is selectively passivated.
Dicing the devices into individual chip devices; thereafter, the device is encapsulated with a material such as epoxy.
Example 5
Referring to fig. 7, the embodiment discloses a method for manufacturing an inorganic light emitting diode matrix display device, which comprises the following steps:
step 1, manufacturing a substrate side of an inorganic light emitting diode pixel device, namely: sequentially growing a buffer layer, an unintentionally doped gallium nitride layer, an N-type gallium nitride layer, a multiple quantum well layer and a P-type gallium nitride layer on a silicon or silicon carbide substrate at the substrate side of the inorganic light emitting diode pixel display device to obtain an epitaxial wafer; and depositing an ITO film layer on the epitaxial wafer by using magnetron sputtering or electron beam evaporation, and keeping the square resistance of the ITO film layer to be larger and the thickness of the ITO film layer to be 50-1000nm.
Then, electron beam evaporation or magnetron sputtering is used to deposit a plurality of metal film layers, and the thickness of the metal film layers is ensured to be discontinuous.
Further, ion beam etching and wet etching are used to etch away part of the metal film layer and the ITO film of the common electrode area on the pixel device side of the inorganic light emitting diode.
And further, using induction plasma etching to expose the P-type gallium nitride layer, the multiple quantum well layer and part of the N-type gallium nitride layer in the partial metal removal region of the common electrode region of the pixel device side of the inorganic light emitting diode, so that the high-conductivity region of the N-type gallium nitride layer is exposed.
Further, depositing a plurality of layers of metal connection N-type gallium nitride layers on the common electrode area of the pixel device side of the inorganic light-emitting diode to form a cathode of the pixel device side of the inorganic light-emitting diode.
Step 2, manufacturing a substrate side of the driving device, wherein the manufacturing method comprises the following steps: first, a pixel driving circuit and a peripheral integrated circuit are fabricated using standard semiconductor processes, wherein the pixel driving circuit includes two or more drivers and one or more capacitors, and the peripheral circuit includes a field effect transistor or a thin film transistor, a diode, a resistor, and the like.
An array of micro-bumps is then fabricated on the top electrode of the pixel circuit, the micro-bump comprising a pixel or a plurality of sub-pixels.
And 3, bonding and connecting the inorganic light-emitting diode pixel device wafer and the driving device wafer by using bonding equipment under certain temperature, pressure and atmosphere conditions to form an alloy layer serving as a self-aligned mask for hydrogen ion treatment.
And 4, introducing hydrogen-containing element gas into the bonded device after induction plasma power, and performing heat treatment.
Specifically, after the hydrogen-containing element gas is ionized by using inductively coupled plasma, the ionized hydrogen-containing element gas is introduced into an inorganic light-emitting diode pixel display device substrate and a driving device substrate, and after bonding connection is completed, the P-type gallium nitride layer is selectively passivated.
Then, removing the silicon or silicon nitride substrate; dicing the devices into individual chip devices; and encapsulating the device by using materials such as epoxy resin and the like to form a cover glass cover plate.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the invention are intended to be included within the scope of the invention.
Claims (10)
1. An inorganic light-emitting diode matrix display device comprises an inorganic light-emitting diode pixel display device substrate and a driving device substrate, and is characterized in that the inorganic light-emitting diode pixel display device substrate comprises an epitaxial wafer, an ITO film layer and a metal film layer, the ITO film layer is deposited on the epitaxial wafer, and a discontinuous metal film layer is deposited on the ITO film layer; the driving device substrate is provided with a micro-bump array, and the micro-bump array is connected with the metal film layer in a bonding way; the epitaxial wafer comprises a substrate, and a buffer layer, an unintentionally doped gallium nitride layer, an N-type gallium nitride layer, a multi-layer quantum well and a P-type gallium nitride layer are sequentially epitaxially grown on the substrate.
2. An inorganic light emitting diode matrix display device according to claim 1, wherein the substrate is a sapphire substrate or a silicon/silicon carbide substrate.
3. An inorganic light emitting diode matrix display device according to claim 1, wherein the driver device substrate side is a passive matrix driver device or an active matrix driver device.
4. A method for manufacturing an inorganic light-emitting diode matrix display device comprises the following steps:
step 1, sequentially epitaxially growing a buffer layer, an unintentionally doped gallium nitride layer, an N-type gallium nitride layer, a multiple quantum well layer and a P-type gallium nitride layer on a substrate on the substrate side of an inorganic light emitting diode pixel display device to obtain an epitaxial wafer; depositing an ITO film layer and a metal film layer on the epitaxial wafer;
step 2, carrying out pixel imaging treatment on the drive device substrate to manufacture a micro-bump array for bonding connection;
step 3, bonding and connecting the metal film layer of the inorganic light-emitting diode pixel display device substrate and the micro-bump array of the driving device substrate;
and 4, ionizing the hydrogen-containing element gas by using induction plasma, introducing the ionized gas into the bonded device, and performing heat treatment.
5. The method for manufacturing an inorganic light emitting diode matrix display device according to claim 4, wherein the step 1 further comprises:
etching partial metal film layer and ITO film of the common electrode area of the pixel device side of the inorganic light-emitting diode by using ion beam etching and wet etching;
using induction plasma etching to expose the P-type gallium nitride layer, the multiple quantum well layer and part of the N-type gallium nitride layer in the partial metal removal region of the common electrode region of the pixel device side of the inorganic light emitting diode, so that the high-conductivity region of the N-type gallium nitride layer is exposed;
and depositing a plurality of layers of metal connection N-type gallium nitride layers in the common electrode area of the pixel device side of the inorganic light-emitting diode.
6. The method for manufacturing an inorganic light emitting diode matrix display device according to claim 4, wherein the step 4 comprises ionizing a hydrogen-containing gas by induction plasma, introducing the ionized gas into the bonded device, and performing heat treatment, and specifically comprises: and (3) ionizing the hydrogen-containing element gas by using inductively coupled plasma, and then introducing the ionized hydrogen-containing element gas into the device after bonding connection of the inorganic light-emitting diode pixel display device substrate and the driving device substrate is completed, so as to selectively passivate the P-type gallium nitride layer.
7. The method of manufacturing an inorganic light emitting diode matrix display device according to claim 4, wherein the thickness of the ITO thin film layer is 50-1000nm.
8. The method of claim 4, wherein the metal film layer is one or more of Ni, ag, au, pt, ti.
9. The method of manufacturing an inorganic light emitting diode matrix display device according to claim 4, wherein the thickness of the metal thin film layer is 100-1000 nm.
10. The method for manufacturing an inorganic light emitting diode matrix display device according to claim 6, wherein the introducing hydrogen-containing gas in the step 4 includes, but is not limited to: hydrogen, ammonia, methane.
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