CN116453786A - Composite circuit protection device - Google Patents

Composite circuit protection device Download PDF

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Publication number
CN116453786A
CN116453786A CN202210014794.1A CN202210014794A CN116453786A CN 116453786 A CN116453786 A CN 116453786A CN 202210014794 A CN202210014794 A CN 202210014794A CN 116453786 A CN116453786 A CN 116453786A
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CN
China
Prior art keywords
protection device
circuit protection
composite circuit
alloy material
ptc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210014794.1A
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Chinese (zh)
Inventor
陈继圣
江长鸿
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Fuzetec Technology Co Ltd
Original Assignee
Fuzetec Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuzetec Technology Co Ltd filed Critical Fuzetec Technology Co Ltd
Priority to CN202210014794.1A priority Critical patent/CN116453786A/en
Publication of CN116453786A publication Critical patent/CN116453786A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/144—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being welded or soldered
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/1406—Terminals or electrodes formed on resistive elements having positive temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/12—Overvoltage protection resistors
    • H01C7/126—Means for protecting against excessive pressure or for disconnecting in case of failure

Abstract

A composite circuit protection device includes a Positive Temperature Coefficient (PTC) element, a diode element, solder, a first conductive lead, and a second conductive lead. The diode element is connected to the PTC element by the solder. The solder comprises a first alloy material and a second alloy material, wherein the melting point of the second alloy material is lower than that of the first alloy material, and the melting point of the first alloy material and the melting point of the second alloy material are respectively higher than 190 ℃ and lower than 308 ℃. The first conductive lead and the second conductive lead are respectively connected to the PTC element and the diode element. The PTC element of the composite circuit protection device is connected with the diode element through solder, so that excellent structural stability and electrical stability can be achieved.

Description

Composite circuit protection device
Technical Field
The present invention relates to a composite circuit protection device, and more particularly, to a composite circuit protection device including a positive temperature coefficient (positive temperature coefficient, PTC) element and a diode element, which are connected to each other by a solder containing at least two alloy materials.
Background
A conventional Polymer Positive Temperature Coefficient (PPTC) over-current (PPTC) protection structure is shown in fig. 1 and includes two electrodes 30, a PTC polymer substrate 20 laminated between the electrodes 30, and first and second conductive leads 50 and 60 respectively connected to the electrodes 30. The PTC polymer substrate 20 may be formed with a hole 40, the hole 40 having an effective volume capable of accommodating thermal expansion of the PTC polymer substrate 20 when the temperature increases.
Electrical characteristics such as operating current (operating current) and high voltage surge tolerance (high-voltage surge endurability) are important factors affecting the occurrence of power surges in PPTC over-current protection structures. When the operating current and high voltage resistance of the PPTC over-current protection structure is increased by increasing the thickness or area of the PTC polymer substrate 20, it is more susceptible to damage from electrical surges.
The diode may be connected to the PPTC over-current protection structure by solder to impart over-voltage protection to the combined composite circuit protection device, in which the solder must effectively connect the diode to the PPTC over-current protection structure, otherwise the composite circuit protection device may have poor electrical characteristics.
Disclosure of Invention
The present invention is directed to a composite circuit protection device that overcomes at least one of the above-mentioned drawbacks of the prior art.
The composite circuit protection device of the present invention includes a Positive Temperature Coefficient (PTC) element, a diode element, solder, a first conductive lead, and a second conductive lead. The PTC element comprises a PTC layer, a first electrode layer and a second electrode layer, wherein the PTC layer is provided with two opposite surfaces, and the first electrode layer and the second electrode layer are respectively arranged on the two opposite surfaces of the PTC layer. The solder comprises a first alloy material and a second alloy material, wherein the melting point of the second alloy material is lower than that of the first alloy material, and the melting point of the first alloy material and the melting point of the second alloy material are respectively higher than 190 ℃ and lower than 308 ℃. The diode element is connected to the second electrode layer through the solder. The first conductive lead is connected to the first electrode layer, and the second conductive lead is connected to the diode element.
In the composite circuit protection device, the melting point of the first alloy material and the melting point of the second alloy material are respectively 200-300 ℃.
In the composite circuit protection device, the melting point of the first alloy material is not less than 280 ℃.
In the composite circuit protection device, the melting point of the first alloy material is 280-300 ℃.
In the composite circuit protection device, the melting point of the second alloy material is not more than 230 ℃.
In the composite circuit protection device, the melting point of the second alloy material is 210-230 ℃.
In the composite circuit protection device of the present invention, the PTC element has a hole formed in the PTC layer.
In the composite circuit protection device of the present invention, the PTC element and the diode element are connected in series.
In the composite circuit protection device of the present invention, the PTC element and the diode element are connected in parallel.
The PTC element has a rated voltage of 50% -100% of the breakdown voltage of the diode element measured at 1 mA.
The composite circuit protection device is tripped under overvoltage which is smaller than the sum of rated voltage of the PTC element and collapse voltage of the diode element.
The diode element is an instantaneous voltage suppressing diode.
The instant voltage suppressing diode includes a silicon wafer having a PN junction.
The PTC layer comprises a polymer base material and conductive filler dispersed in the polymer base material.
The composite circuit protection device of the present invention, the polymeric substrate is made from a polymeric composition comprising a non-grafted olefinic polymer.
The non-grafted olefin polymer is high density polyethylene.
The composite circuit protection device of the present invention, the polymer composition further comprises an olefinic polymer grafted with a carboxylic anhydride.
The composite circuit protection device of the present invention, the conductive filler is selected from carbon black powder, metal powder, conductive ceramic powder, or a combination of the foregoing.
The composite circuit protection device of the invention further comprises a packaging material, wherein the packaging material packages the PTC element, the diode element, the solder, part of the first conductive lead and part of the second conductive lead.
The invention relates to a composite circuit protection device, wherein the packaging material is prepared from epoxy resin.
The invention has the beneficial effects that: the PTC element of the composite circuit protection device is connected with the diode element through solder, so that excellent structural stability and electrical stability can be achieved.
Drawings
Other features and advantages of the invention will be apparent from the following description of the embodiments with reference to the accompanying drawings, in which:
FIG. 1 is a schematic perspective view of a prior art PPTC over-current protection architecture;
FIG. 2 is a schematic cross-sectional view of a first embodiment of a composite circuit protection device of the present invention; a kind of electronic device with high-pressure air-conditioning system
Fig. 3 is a schematic cross-sectional view of a second embodiment of the composite circuit protection device of the present invention.
Detailed Description
Before the present invention is described in detail, it should be noted that in the following description, like elements are denoted by the same reference numerals.
Referring to fig. 2, a first embodiment of the composite circuit protection device of the present invention includes a Positive Temperature Coefficient (PTC) element 2, a diode element 3, solder 6, a first conductive lead 4, and a second conductive lead 5.
The PTC element 2 comprises a PTC layer 21, a first electrode layer 22 and a second electrode layer 23, wherein the PTC layer 21 has two opposite surfaces 211, and the first electrode layer 22 and the second electrode layer 23 are disposed on the two opposite surfaces 211 of the PTC layer 21, respectively.
According to the invention, the PTC element 2 is formed with a hole 210. In the present embodiment, the hole 210 is formed in the PTC layer 21. The PTC layer 21 of the PTC element 2 has a peripheral edge 212 which defines the boundary of the PTC layer 21 and is interconnected with two opposite surfaces 211 of the PTC layer 21. The hole 210 is spaced from the periphery 212 of the PTC layer 21 and has an effective volume to accommodate thermal expansion of the PTC layer 21 when the temperature increases to avoid unwanted structural deformation of the PTC layer 21.
In an embodiment of the present invention, the hole 210 penetrates at least one of two opposite surfaces 211 of the PTC layer 21. In some embodiments of the present invention, the hole 210 further penetrates at least one of the first electrode layer 22 and the second electrode layer 23. In this embodiment, the hole 210 penetrates through two opposite surfaces 211 of the PTC layer 21 and the first electrode layer 22 and the second electrode layer 23 to form a through hole. In some embodiments of the present invention, the hole 210 extends along a line passing through the geometric center of the PTC layer 21 and across the two opposing surfaces 211. The hole 210 is defined by a hole defining wall having a cross section parallel to the surface 211 of the PTC layer 21. The cross-section of the hole defining wall may be circular, square, oval, triangular, cross-shaped, etc.
According to the present invention, the PTC element 2 may be a Polymer PTC (PPTC) element, and the PTC layer 21 may include a polymer base material and a conductive filler dispersed in the polymer base material. The polymeric substrate may be made from a polymer composition containing a non-grafted olefin-based polymer. In certain embodiments of the invention, the non-grafted olefin-based polymer is a High Density Polyethylene (HDPE). In certain embodiments of the present invention, the polymer composition further comprises a grafted olefin-based polymer. In certain embodiments of the present invention, the grafted olefin polymer is a carboxylic anhydride grafted olefin polymer. The conductive filler suitable for the present invention is selected from carbon black (carbon black) powder, metal powder, conductive ceramic powder or a combination of the foregoing, but is not limited thereto.
The diode element 3 comprises a diode structure 31, a third electrode layer 32 and a fourth electrode layer 33. The diode structure 31 has two opposite surfaces 311.
In some embodiments of the present invention, the diode element 3 is a transient voltage suppression (transient voltage suppression, TVS) diode comprising a silicon wafer with a PN junction.
The diode element 3 has a breakdown voltage (breakdown voltage) when it starts conducting. The PTC element 2 has a rated voltage (rated voltage) during the assigned operation. In some embodiments of the invention, the PTC element 2 has a rated voltage between 50% and 100% of the breakdown voltage of the diode element 3 measured at 1 mA. In other embodiments of the invention, the composite circuit protection device trips under an overvoltage that is less than the sum of the rated voltage of the PTC element 2 and the collapse voltage of the diode element 3.
The solder 6 is used to connect the diode element 3 to the PTC element 2. In some embodiments of the invention, the PTC element 2 and the diode element 3 are connected in series. In other embodiments of the invention, the PTC element 2 is connected in parallel with the diode element 3. The solder 6 comprises at least two alloy materials. In this embodiment, the solder 6 includes a first alloy material and a second alloy material, and the melting point of the second alloy material is lower than that of the first alloy material. The melting point of the first alloy material and the melting point of the second alloy material are respectively more than 190 ℃ and less than 308 ℃. In some embodiments of the invention, the melting point of the first alloy material and the melting point of the second alloy material are each between 200-300 ℃. For example, the first alloy material has a melting point of not less than 280 ℃, such as between 280 ℃ and 300 ℃; the second alloy material has a melting point of not more than 230 ℃, for example between 210-230 ℃. The PTC device 2 and the diode device 3 are soldered together by the solder 6, so that the composite circuit protection device has better structural stability and electrical stability.
The first conductive lead 4 is bonded to the first electrode layer 22 by the solder 6 or any other existing solder. In the present embodiment, the first conductive lead 4 has a connection portion 41 and a free portion 42, the connection portion 41 of the first conductive lead 4 is connected to the outer surface of the first electrode layer 22, and the free portion 42 of the first conductive lead 4 extends from the connection portion 41 out of the first electrode layer 22 for being inserted into a pin hole (not shown) of a circuit board or a circuit device.
The second conductive lead 5 is attached to the diode element 3 by the solder 6 or any other existing solder. In the present embodiment, the second conductive lead 5 has a connection portion 51 and a free portion 52, the connection portion 51 of the second conductive lead 5 is connected to the fourth electrode layer 33 of the diode element 3, and the free portion 52 of the second conductive lead 5 extends from the connection portion 51 to the fourth electrode layer 33 for insertion into a pin hole (not shown) of a circuit board or a circuit device.
The composite circuit protection device further comprises an encapsulation material 7, wherein the encapsulation material 7 encapsulates the PTC element 2, the diode element 3, the solder 6, a portion of the first conductive lead 4 and a portion of the second conductive lead 5. In the present embodiment, the free portion 42 of the first conductive lead 4 and the free portion 52 of the second conductive lead 5 are exposed outside the package material 7. In some embodiments of the present invention, the encapsulant 7 is made of epoxy.
Referring to fig. 3, a second embodiment of the composite circuit protection device of the present invention is similar to the first embodiment, except that the second embodiment further includes a third conductive lead 8. The third conductive lead 8 is connected by the solder 6 or any other existing solder and is disposed between the second electrode layer 23 and the third electrode layer 32. In this embodiment, the third conductive lead 8 has a connection portion 81 and a free portion 82, the connection portion 81 of the third conductive lead 8 is connected to the second electrode layer 23 and the third electrode layer 32, and the free portion 82 of the third conductive lead 8 extends from the connection portion 81 to the second electrode layer 23 and the third electrode layer 32 for inserting into a pin hole (not shown) of a circuit board or a circuit device.
In this embodiment, the encapsulant 7 encapsulates the PTC element 2, the diode element 3, the solder 6, a portion of the first conductive lead 4, a portion of the second conductive lead 5, and a portion of the third conductive lead 8. The free portion 42 of the first conductive lead 4, the free portion 52 of the second conductive lead 5, and the free portion 82 of the third conductive lead 8 are exposed outside the package material 7.
The invention will be further illustrated with reference to the following examples, but it should be understood that the examples are illustrative only and should not be construed as limiting the practice of the invention.
Examples
[ preparation of solder ]
The four solder pastes (a to D, having different compositions and melting points) shown in table 1 were formulated according to the amounts shown in table 2 into solders used in the composite circuit protection devices of examples 1 to 5 (E1 to E5) and comparative examples 1 to 6 (CE 1 to CE 6).
TABLE 1
TABLE 2
"-" means that the solder paste is absent.
[ preparation of composite Circuit protection device ]
Example 1 (E1) >
12.5g of HDPE (from Formosa Plastics industries Co., ltd., product model: HDPE 9002) as a non-grafted olefin-based polymer, 12.5g of HDPE grafted with maleic anhydride (from DuPont, product model: MB 100D) as a carboxylic anhydride-grafted olefin-based polymer, and 25g of carbon black powder (from Columbian Chemicals, product model: raven 430 UB) as a conductive filler.
The above ingredients were mixed in a kneader (brand: brabender) and the ingredients were mixed at a temperature of 200℃and a stirring speed of 30rpm for 10 minutes.
Placing the above mixture into a mold, and heating to 200deg.C and 80kg/cm 2 Is hot-pressed for 4 minutes to form a PTC Polymer (PPTC) layer sheet having a thickness of 0.6 mm. The sheet was removed from the mold and the opposite surfaces thereof were brought into contact with two sheets of copper foil (as the first electrode layer and the second electrode layer, respectively), respectively, at 200℃and 80kg/cm 2 The hot pressing was performed for 4 minutes to form a PPTC laminate having a thickness of 0.67 mm. After cutting the PPTC laminate into 4.0mm×4.0mm chips (hereinafter referred to as PPTC chips), each PPTC chip was irradiated with Co-60 gamma rays at a total radiation dose of 150kGy, and perforations were punched in the central portion of each PPTC chip, each perforation being formed by a laminate having a circular cross section (diameter: 0.15mm, circular area: 0.0177 mm) 2 ) Is defined by the hole defining walls. PPTC plaques were measured according to the safety standard UL 1434 (1998) of the Underwriter Laboratories company for a thermistor-type device:
(1) Holding current (i.e., maximum current value at normal operation): 0.2A.
(2) Trip current (minimum current value required for PPTC die to reach high resistance state): 0.4A.
(3) Rated voltage (i.e., voltage applicable to PPTC die operation): 60V.
(4) Withstand voltage (withstand voltage, the maximum voltage that does not cause PPTC die failure or damage): 60V.
(5) Rated resistance (resistance measured at 25 ℃): 2-3 omega.
Diode elements (TVS diodes, 4mm x 4mm, available from the hundred furin corporation, product model: SMCJ 90A) were measured according to the Underwriter Laboratories corporation safety standard UL 497B (2004) for transient voltage surge suppressors (transient voltage surge suppressor):
(1) Collapse Voltage (V) BR I.e., the voltage of the TVS diode at the beginning of conduction, measured at 1 mA): 100-111V.
(2) The maximum clamping voltage (maximum clamping voltage, i.e., the maximum voltage that the TVS diode can provide for limiting, is determined during the pulse waveform (t p ) 10/1000 [ mu ] s and maximum pulse peak current (I pp ) 10.3A measured below): 146V.
Solder as shown in table 2 above was applied to the PPTC die and a TVS diode was placed on the solder. Then, a first conductive lead and a second conductive lead are respectively welded to one of the two copper foils of each PPTC die and the TVS diode. The resulting sample was placed in a reflow oven (reflow oven) for reflow (reflow soldering) to form a composite circuit protection device of E1 (solder sample). The peak temperature of the reflow oven was set at 320 ℃ to control the reflow interval to be above the liquid phase temperature of 305 ℃ for 20 seconds, with an overall reflow time of 4 minutes.
Examples 2 to 5 (E2-E5) >, and
the process conditions for the composite circuit protection device of E2-E5 are similar to E1, except that the solder used in the composite circuit protection device of E2-E5 is as shown in table 2 above.
Comparative examples 1 to 4 (CE 1-CE 4) >
The process conditions of the composite circuit protection device of CE1-CE4 are similar to E1, except that the solders used in the composite circuit protection device of CE1-CE4 are solder paste a, solder paste B, solder paste C, and solder paste D, respectively (as shown in table 2 above).
Comparative examples 5 and 6 (CE 5 and CE 6) >, respectively
The process conditions of the CE5 and CE6 composite circuit protection device were similar to E1, except that the solders used in the CE5 and CE6 composite circuit protection device were as shown in table 2 above.
Performance testing
[ weldability test (Solderability test) ]
The welding samples of E1 to E5 and CE1 to CE6 were observed by an optical microscope, and the weldability was calculated by the following formula, and the results are shown in Table 3, respectively.
TABLE 3 Table 3
Weldability (%)
E1 100
E2 100
E3 100
E4 100
E5 100
CE1 N/A
CE2 90
CE3 75
CE4 45
CE5 N/A
CE6 55
"N/A" means unavailable.
As shown in the results of table 3, since the solder (containing the solder paste a) used in the soldering samples of CE1 and CE5 was difficult to melt under the above-mentioned stick back member, the area of the surface of the PPTC die-soldered to the TVS diode could not be measured. The weldability of the welding samples of CE2-CE4 and CE6 is only 45% -90%, and the high fluidity of the soldering paste under the welding rod back part leads to the easy relative sliding of the PPTC chip and the TVS diode to cause poor welding. In contrast, the weldability of the welding samples of E1-E5 was 100%, showing good welding and better structural stability.
[ resistance test ]
For each of the welding samples E1 to E5 and CE1 to CE6, 10 samples were taken as test samples, and the resistance of the PPTC chip at room temperature (25 ℃) was measured by a micro-ohm meter (micro-ohm meter), and the average values thereof are shown in Table 4.
[ maximum clamping Voltage test ]
For the welding samples of E1-E5 and CE1-CE6, 10 were taken as test samples, and TVS diodes were measured in pulse waveform (t) using a protection diode TVS diode reverse impact tester (available from Corp motor Co., ltd., product model: VC 6880A) p ) 10/1000 [ mu ] s and maximum pulse peak current (I pp ) 10.3A provides a limited maximum voltage, the average of which is shown in table 4, respectively.
TABLE 4 Table 4
Table 4 shows that the resistance of the PPTC die for the welded samples of CE1-CE4, where CE1 and CE2 were 5.23 Ω and 5.15 Ω, respectively, were undesirably greater than the nominal resistance of the PPTC die before reflow (2-3 Ω); and wherein the maximum clamping voltage of the TVS diode of the welding samples of CE1, CE3 and CE4 is between 148.5-160.7V, which is undesirably greater than the maximum clamping voltage (146V) of the TVS diode before reflow. The results show that the welding samples of CE1-CE4, which were welded using only a single solder paste in the process, failed to maintain the electrical properties of the PPTC die and TVS diode, resulting in insufficient electrical stability.
Regarding CE5 and CE6, the resistance of the PPTC die of the solder sample was 4.45 Ω and 4.33 Ω, respectively, which were undesirably greater than the rated resistance (2-3 Ω) of the PPTC die prior to reflow; and the maximum clamping voltages of the TVS diodes of the welded samples are 147.5V and 155.7V, respectively, which are not undesirably greater than the maximum clamping voltage (146V) of the TVS diodes before reflow. The results show that the soldering samples of CE5 and CE6 soldered using two different solder pastes [ one with too high a melting point (e.g., not less than 308 ℃) or too low a melting point (e.g., not more than 190 ℃) ] in the process, failed to maintain the electrical properties of their PPTC die and TVS diode, resulting in insufficient electrical stability.
Conversely, the resistance of the PPTC die of the welded samples of E1-E5 all fall within the range of rated resistance (2-3 Ω) prior to reflow; and the maximum clamping voltage of the TVS diode of the welding sample is smaller than the maximum clamping voltage (146V) before reflow. The welding samples of E1-E5 welded by two different soldering pastes (the melting point is larger than 190 ℃ and smaller than 308 ℃) in the process can maintain the electrical property of the PPTC chip and the TVS diode, and have better electrical stability.
In summary, the PTC element 2 of the composite circuit protection device of the present invention has excellent structural stability and electrical stability by connecting the diode element 3 with the solder 6 by the first alloy material and the second alloy material having melting points greater than 190 ℃ and less than 308 ℃ respectively, so that the present invention can be achieved.
The foregoing is merely illustrative of the present invention and is not intended to limit the scope of the invention, which is defined by the appended claims and their equivalents.

Claims (20)

1. A composite circuit protection device, characterized in that: the composite circuit protection device comprises:
PTC element comprising
A PTC layer having two opposite surfaces, an
The first electrode layer and the second electrode layer are respectively arranged on two opposite surfaces of the PTC layer;
the welding flux comprises a first alloy material and a second alloy material, wherein the melting point of the second alloy material is lower than that of the first alloy material, and the melting point of the first alloy material and the melting point of the second alloy material are respectively higher than 190 ℃ and lower than 308 ℃;
a diode element connected to the second electrode layer through the solder;
a first conductive lead connected to the first electrode layer; a kind of electronic device with high-pressure air-conditioning system
And the second conductive lead is connected with the diode element.
2. The composite circuit protection device of claim 1, wherein: the melting point of the first alloy material and the melting point of the second alloy material are respectively 200-300 ℃.
3. The composite circuit protection device of claim 1, wherein: the first alloy material has a melting point of not less than 280 ℃.
4. A composite circuit protection device according to claim 3, wherein: the melting point of the first alloy material is 280-300 ℃.
5. The composite circuit protection device of claim 1, wherein: the second alloy material has a melting point of no greater than 230 ℃.
6. The composite circuit protection device of claim 5, wherein: the second alloy material has a melting point between 210 and 230 ℃.
7. The composite circuit protection device of claim 1, wherein: the PTC element has a hole formed in the PTC layer.
8. The composite circuit protection device of claim 1, wherein: the PTC element is connected in series with the diode element.
9. The composite circuit protection device of claim 1, wherein: the PTC element is connected in parallel with the diode element.
10. The composite circuit protection device of claim 1, wherein: the PTC element has a rated voltage between 50% and 100% of the breakdown voltage of the diode element measured at 1 mA.
11. The composite circuit protection device of claim 1, wherein: the composite circuit protection device trips under an overvoltage that is less than the sum of the rated voltage of the PTC element and the collapse voltage of the diode element.
12. The composite circuit protection device of claim 1, wherein: the diode element is a transient voltage suppression diode.
13. The composite circuit protection device of claim 12, wherein: the transient voltage suppression diode includes a silicon wafer having a PN junction.
14. The composite circuit protection device of claim 1, wherein: the PTC layer comprises a polymeric substrate and a conductive filler dispersed in the polymeric substrate.
15. The composite circuit protection device of claim 14, wherein: the polymeric substrate is made from a polymer composition containing a non-grafted olefin-based polymer.
16. The composite circuit protection device of claim 15, wherein: the non-grafted olefin-based polymer is a high density polyethylene.
17. The composite circuit protection device of claim 15, wherein: the polymer composition also includes an olefin polymer grafted with a carboxylic anhydride.
18. The composite circuit protection device of claim 14, wherein: the conductive filler is selected from carbon black powder, metal powder, conductive ceramic powder, or a combination of the foregoing.
19. The composite circuit protection device of claim 1, wherein: the PTC element, the diode element, the solder, a portion of the first conductive lead and a portion of the second conductive lead are encapsulated by an encapsulation material.
20. The composite circuit protection device of claim 19, wherein: the packaging material is prepared from epoxy resin.
CN202210014794.1A 2022-01-07 2022-01-07 Composite circuit protection device Pending CN116453786A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210014794.1A CN116453786A (en) 2022-01-07 2022-01-07 Composite circuit protection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210014794.1A CN116453786A (en) 2022-01-07 2022-01-07 Composite circuit protection device

Publications (1)

Publication Number Publication Date
CN116453786A true CN116453786A (en) 2023-07-18

Family

ID=87127788

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210014794.1A Pending CN116453786A (en) 2022-01-07 2022-01-07 Composite circuit protection device

Country Status (1)

Country Link
CN (1) CN116453786A (en)

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