CN114823018A - Composite circuit protection device - Google Patents

Composite circuit protection device Download PDF

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Publication number
CN114823018A
CN114823018A CN202110108817.0A CN202110108817A CN114823018A CN 114823018 A CN114823018 A CN 114823018A CN 202110108817 A CN202110108817 A CN 202110108817A CN 114823018 A CN114823018 A CN 114823018A
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protection device
ptc
circuit protection
composite circuit
electrode layer
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陈继圣
江长鸿
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Fuzetec Technology Co Ltd
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Fuzetec Technology Co Ltd
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Priority to CN202110108817.0A priority Critical patent/CN114823018A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/13—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material current responsive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/1406—Terminals or electrodes formed on resistive elements having positive temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/12—Overvoltage protection resistors
    • H01C7/126—Means for protecting against excessive pressure or for disconnecting in case of failure

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Thermistors And Varistors (AREA)

Abstract

A composite circuit protection device comprises a Positive Temperature Coefficient (PTC) element, a diode element, a first conductive lead and a second conductive lead. The PTC element comprises a PTC layer, a first electrode layer and a second electrode layer, wherein the PTC layer is provided with two opposite surfaces, and the first electrode layer and the second electrode layer are respectively arranged on the two opposite surfaces of the PTC layer. The diode element is connected to the second electrode layer. The first conductive lead is connected to the first electrode layer, and the second conductive lead is connected to the diode element. The PTC element has a rated voltage between 50% and 250% of the breakdown voltage of the diode element measured at 1 mA. The composite circuit protection device has excellent tolerance, and the PTC element can protect the diode element from being burnt in the presence of over-current and over-voltage.

Description

Composite circuit protection device
Technical Field
The present invention relates to a composite circuit protection device, and more particularly, to a composite circuit protection device including a Positive Temperature Coefficient (PTC) element and a diode element, wherein the PTC element has a rated voltage of 50% to 250% of a breakdown voltage of the diode element measured at 1 mA.
Background
US 8,508,328B1 discloses an inserted (insertable) Polymeric Positive Temperature Coefficient (PPTC) overcurrent (over-current) protection device, see fig. 1, comprising two electrodes 30, first and second electrically conductive leads 50 and 60, respectively, attached to the electrodes 30, a PTC polymeric substrate 20 laminated between the electrodes 30. The PTC polymer substrate 20 can be formed with a hole 40, the hole 40 having an effective volume to accommodate thermal expansion of the PTC polymer substrate 20 when the temperature increases.
Electrical characteristics, such as operating current (operating current) and high-voltage surge withstand (high-voltage surge) are important factors that affect the occurrence of a power surge in a PPTC overcurrent protection device. When the operating current of a PPTC overcurrent protection device is increased by increasing the thickness or area of the PTC polymer substrate 20, it is more susceptible to electrical surges. On the other hand, when the high voltage resistance of a PPTC overcurrent protection device is increased by reducing the thickness or area of the PTC polymer substrate 20, it is also not necessarily less susceptible to electrical surges.
Although the combination of the PTC element and the diode can impart over-current (over-current) and over-voltage (over-voltage) protection to the combined composite circuit protection device, the diode can only briefly withstand a power surge (e.g., 0.001 seconds). That is, if the surge time exceeds the cut-off time interval, the diode will be burned or damaged by the over-current or over-voltage, so that the composite circuit protection device will lose its function permanently.
Disclosure of Invention
The present invention is directed to a composite circuit protection device that overcomes at least one of the above-mentioned shortcomings of the prior art.
The composite circuit protection device comprises a Positive Temperature Coefficient (PTC) element, a diode element, a first conductive lead and a second conductive lead. The PTC element comprises a PTC layer, a first electrode layer and a second electrode layer, wherein the PTC layer is provided with two opposite surfaces, and the first electrode layer and the second electrode layer are respectively arranged on the two opposite surfaces of the PTC layer. The diode element is connected to the second electrode layer. The first conductive lead is connected to the first electrode layer, and the second conductive lead is connected to the diode element. The PTC element has a rated voltage between 50% and 250% of the breakdown voltage of the diode element measured at 1 mA.
In the composite circuit protection device of the invention, the rated voltage of the PTC element is between 70% and 230% of the breakdown voltage of the diode element measured under 1 mA.
In the composite circuit protection device, the overvoltage of the composite circuit protection device is less than the sum of the rated voltage of the PTC element and the breakdown voltage of the diode element.
In the composite circuit protection device of the invention, the PTC element is provided with a hole in the PTC layer.
In the composite circuit protection device of the present invention, the PTC layer of the PTC element has a periphery defining a boundary of the PTC layer and interconnected with two opposite surfaces of the PTC layer, and the hole is spaced apart from the periphery of the PTC layer.
In the composite circuit protection device of the present invention, the hole penetrates through at least one of the two opposite surfaces of the PTC layer.
In the composite circuit protection device of the present invention, the hole further penetrates at least one of the first electrode layer and the second electrode layer.
The composite circuit protection device of the invention, the diode element comprises
A diode structure having two opposing surfaces,
a third electrode layer disposed on one of two opposite surfaces of the diode structure and connected to the second electrode layer of the PTC element, an
A fourth electrode layer disposed on the other of the two opposite surfaces of the diode structure,
wherein the second conductive lead is connected to one of the third electrode layer and the fourth electrode layer of the diode element.
The composite circuit protection device further comprises a third conductive lead, wherein the second conductive lead is connected with the fourth electrode layer, and the third conductive lead is connected and arranged between the second electrode layer and the third electrode layer.
In the composite circuit protection device of the present invention, the PTC element and the diode element are connected in series.
In the composite circuit protection device of the present invention, the PTC element and the diode element are connected in parallel.
In the composite circuit protection device of the present invention, the diode element is an instantaneous voltage suppression diode.
In the composite circuit protection device of the present invention, the tvs comprises a silicon wafer having a PN junction.
In the composite circuit protection device of the present invention, the PTC element is a polymer PTC element, and the PTC layer is a PTC polymer layer.
In the composite circuit protection device of the present invention, the PTC polymer layer comprises a polymer base material and a conductive filler dispersed in the polymer base material.
The polymer substrate of the composite circuit protection device of the present invention is made of a polymer composition containing a non-grafted olefin polymer.
The composite circuit protection device of the invention also comprises olefin polymers grafted by carboxylic anhydride.
The conductive filler of the composite circuit protection device is selected from carbon black powder, metal powder, conductive ceramic powder or the combination of the carbon black powder, the metal powder and the conductive ceramic powder.
The composite circuit protection device further comprises a packaging material, wherein the packaging material packages the PTC element, the diode element, part of the first conductive lead and part of the second conductive lead.
In the composite circuit protection device of the invention, the packaging material is made of epoxy resin.
The invention has the beneficial effects that: the composite circuit protection device has excellent tolerance and reliability, and the PTC element can rapidly trip to protect the diode element from being burnt in the presence of over-current and over-voltage.
Drawings
Other features and effects of the present invention will be apparent from the embodiments with reference to the accompanying drawings, in which:
fig. 1 is a perspective view of a conventional plug-in PTC overcurrent protection device;
FIG. 2 is a schematic cross-sectional view of a first embodiment of the composite circuit protection device of the present invention;
FIG. 3 is a schematic cross-sectional view of a variation of the first embodiment; and
fig. 4 is a schematic cross-sectional view of a composite circuit protection device according to a second embodiment of the invention.
Detailed Description
Before the present invention is described in detail, it should be noted that in the following description, like elements are represented by like reference numerals.
Referring to fig. 2, the first embodiment of the composite circuit protection device of the present invention includes a Positive Temperature Coefficient (PTC) device 2, a diode device 3, a first conductive lead 4 and a second conductive lead 5.
The PTC element 2 includes a PTC layer 21, a first electrode layer 22 and a second electrode layer 23, the PTC layer 21 has two opposite surfaces 211, and the first electrode layer 22 and the second electrode layer 23 are respectively disposed on the two opposite surfaces 211 of the PTC layer 21. In some embodiments of the present invention, the first electrode layer 22 and the second electrode layer 23 are connected to the PTC layer 21 by solder. The diode element 3 is connected to the second electrode layer 23. The first conductive lead 4 is connected to the first electrode layer 22, and the second conductive lead 5 is connected to the diode element 3.
According to the invention, the PTC element 2 has a rated voltage (rated voltage) which is between 50% and 250% of the breakdown voltage (breakdown voltage) of the diode element 3 measured at 1 mA. In some embodiments of the present invention, the PTC device 2 has a rated voltage of 70% to 230% of the breakdown voltage of the diode device 3 measured at 1 mA.
The PTC element 2 is under an overcurrent and a voltage larger than the breakdown voltage of the diode element 3 and trips before the diode element 3 burns out. In other words, in the presence of the overvoltage greater than the breakdown voltage of the diode element 3, the PTC element 2 rapidly trips to a high resistance state, so that the overcurrent is restricted from flowing through the diode element 3, thereby protecting the diode element 3 from burning, and the hybrid circuit protection device is thus reused.
In the present invention, the overvoltage is smaller than the sum of the rated voltage of the PTC element 2 and the breakdown voltage of the diode element 3.
In this context, the term "burn-out" means that the diode element 3 is out of function, typically occurring above 180 ℃.
According to the present invention, the PTC element 2 can be a polymer PTC (pptc) element and the PTC layer 21 can be a PTC polymer layer. The PTC polymer layer includes a polymer base material and a conductive filler dispersed in the polymer base material. The polymer substrate may be made from a polymer composition containing a non-grafted olefin-based polymer. In certain embodiments of the invention, the non-grafted olefin-based polymer is High Density Polyethylene (HDPE). In certain embodiments of the present invention, the polymer composition further comprises a grafted olefin-based polymer. In certain embodiments of the present invention, the grafted olefin-based polymer is an olefin-based polymer grafted with a carboxylic acid anhydride. The conductive filler suitable for use in the present invention is selected from carbon black (carbon black) powder, metal powder, conductive ceramic powder, or a combination thereof, but is not limited thereto. The diode element 3 includes a diode structure 31, a third electrode layer 32, and a fourth electrode layer 33. The diode structure 31 has two opposite surfaces 311. The third electrode layer 32 is disposed on one of the two opposite surfaces 311 of the diode structure 31 and is connected to the second electrode layer 23 of the PTC element 2 by solder. The fourth electrode layer 33 is disposed on the other of the two opposite surfaces 311 of the diode structure 31. The second conductive lead 5 is connected to one of the third electrode layer 32 and the fourth electrode layer 33 of the diode element 3.
The PTC element 2 and the diode element 3 may be connected in series or in parallel. The diode element 3 may be a Transient Voltage Suppression (TVS) diode comprising a silicon wafer with a PN junction.
In the present embodiment, the first conductive lead 4 has a connection portion 41 and a free portion 42, and the second conductive lead 5 has a connection portion 51 and a free portion 52. The connecting portion 41 of the first conductive lead 4 is connected to the outer surface of the first electrode layer 22 by solder, and the free portion 42 of the first conductive lead 4 extends out of the first electrode layer 22 from the connecting portion 41 for being inserted into a pin hole (not shown) of a circuit board or a circuit device.
In the present embodiment, the connection portion 51 of the second conductive lead 5 is connected to the fourth electrode layer 33 of the diode element 3 by solder, and the free portion 52 of the second conductive lead 5 extends out of the connection portion 51 to the fourth electrode layer 33 for being inserted into a pin hole (not shown) of a circuit board or a circuit device.
According to the present invention, the composite circuit protection device further comprises a packaging material 7, wherein the packaging material 7 packages the PTC element 2, the diode element 3, a portion of the first conductive lead 4 and a portion of the second conductive lead 5.
A portion of the free portion 42 of the first conductive lead 4 and a portion of the free portion 52 of the second conductive lead 5 are exposed outside the encapsulant 7. In some embodiments of the present invention, the encapsulant 7 is made of epoxy resin.
Referring to fig. 3, a variation of the first embodiment of the composite circuit protection device of the present invention is similar to the first embodiment, and the difference is that in the variation, the PTC element 2 is formed with a hole 210. In the present embodiment, the hole 210 is formed in the PTC layer 21. The PTC layer 21 of the PTC element 2 has a periphery which defines the boundary of the PTC layer 21 and is interconnected with the two opposite surfaces 211 of the PTC layer 21. The holes 210 are spaced from the periphery of the PTC layer 21 and have an effective volume to accommodate thermal expansion of the PTC layer 21 at elevated temperatures to prevent undesirable structural deformation of the PTC layer 21.
In some embodiments of the present invention, the hole 210 extends through at least one of two opposing surfaces 211 of the PTC layer 21. In some embodiments of the present invention, the hole 210 further penetrates at least one of the first electrode layer 22 and the second electrode layer 23. In the present embodiment, the hole 210 penetrates through two opposite surfaces 211 of the PTC layer 21 and the first and second electrode layers 22 and 23 to form a through hole. In some embodiments of the present invention, the hole 210 extends along a line passing through the geometric center of the PTC layer 21 and across the two opposing surfaces 211. The hole 210 is defined by hole-defining walls having a cross-section parallel to the surface 211 of the PTC layer 21. The cross-section of the aperture defining wall may be circular, square, oval, triangular, cross-shaped, etc.
Referring to fig. 4, a second embodiment of the composite circuit protection device of the present invention is similar to the first embodiment, and differs in that the second embodiment further includes a third conductive lead 6. In the present embodiment, the second conductive lead 5 is connected to the fourth electrode layer 33 of the diode element 3 by solder, and the third conductive lead 6 is connected by solder and disposed between the second electrode layer 23 and the third electrode layer 32.
The third conductive lead 6 has a connection portion 61 and a free portion 62. The connecting portion 61 of the third conductive lead 6 is connected to the second electrode layer 23 and the third electrode layer 32, and the free portion 62 of the third conductive lead 6 extends out of the connecting portion 61 to the second electrode layer 23 and the third electrode layer 32 for inserting into a pin hole (not shown) of a circuit board or a circuit device.
In the present embodiment, the sealing material 7 encapsulates the PTC device 2, the diode device 3, a portion of the first conductive lead 4, a portion of the second conductive lead 5, and a portion of the third conductive lead 6. A portion of the free portion 42 of the first conductive lead 4, a portion of the free portion 52 of the second conductive lead 5, and a portion of the free portion 62 of the third conductive lead 6 are exposed outside the encapsulant 7.
The invention will be further described in the following examples, but it should be understood that these examples are for illustrative purposes only and are not to be construed as limiting the practice of the invention.
Examples
< example 1(E1) >
12.5g of HDPE (available from Taiwan plastics industries Ltd., product number: HDPE9002) as a non-grafted olefin-based polymer, 12.5g of HDPE grafted with maleic anhydride (available from DuPont, product number: MB100D) as an olefin-based polymer grafted with carboxylic anhydride, and 25g of carbon black powder (available from Columbian Chemicals, product number: Raven 430UB) as a conductive filler.
The above ingredients were mixed in a mixer (Brander), and the ingredients were mixed at a temperature of 200 ℃ and a stirring speed of 30rpm for 10 minutes.
Placing the obtained mixture in a mold, and hot pressing at 200 deg.C and 80kg/cm 2 Was hot-pressed for 4min under the conditions described above to form a sheet of the PTC polymer layer having a thickness of 0.6 mm. The sheet was taken out of the mold, and two opposite surfaces thereof were brought into contact with two copper foils (as a first electrode layer and a second electrode layer, respectively) at 200 ℃ and 80kg/cm 2 Hot pressing was carried out for 4min to form a PPTC element with a thickness of 0.67 mm. The PPTC element was cut into a plurality of 1.0mm x 1.0mm chips (hereinafter PPTC chips), each of the PPTC chips was irradiated with Co-60 γ rays at a total radiation dose of 150kGy, and diode elements (TVS diodes, available from baffin corporation, product model No. SMAJ24A, thickness 0.3mm) were soldered thereto. In example 1(E1), the PPTC die and the TVS diode were connected in series. Then, the first conductive lead and the second conductive lead are respectively soldered to one of the two copper foils of each PPTC die and the TVS diode, so as to form the composite circuit protection device shown in fig. 2.
The holding current (i.e., the maximum current value during normal operation), trip current (i.e., the minimum current value required for the PPTC element to reach a high resistance state), rated voltage (i.e., the voltage at which the PPTC element is operated), and withstand voltage (i.e., the maximum voltage at which the PPTC element does not fail or break) of the PPTC chip are measured according to the safety standard UL 1434 of Underwriter Laboratories for thermistor-type devices (thermistor-type devices). In addition, the breakdown voltage (i.e., the voltage at which the TVS diode operates in a trigger mode) and the clamping voltage (i.e., the maximum voltage that the TVS diode can provide for limiting) of the TVS diode are measured according to the safety standard UL 497B of Underwriter Laboratories for transient voltage surge suppressor (transient voltage supply) of the TVS diode. The results of the property measurements of the PPTC chip and the TVS diode are shown in table 1, respectively.
TABLE 1
Figure BDA0002918521070000081
a: measured at 1 mA.
b: in the pulse waveform (t) p )10/1000 μ s and pulse current (I) p ) Measured at 10.3A.
< example 2(E2) >
The process conditions for the composite circuit protection device of E2 were similar to those of E1, except that after irradiation of the PPTC die with gamma rays, a through hole was punched in the central portion of each PPTC die of E2 to form the composite circuit protection device as shown in fig. 3. Each perforation is made of a material having a circular cross section (diameter of 0.15mm, circular area of 0.0177 mm) 2 ) The aperture of (a) is defined by the wall.
Examples 3 and 4(E3 and E4) >
The process conditions for the composite circuit protection devices of E3 and E4 are similar to those of E1 and E2, respectively, with the difference that in E3 and E4, the PPTC die and the TVS diode are connected in parallel. After the PPTC chips are irradiated with gamma rays, the first conductive lead, the second conductive lead and the third conductive lead are respectively soldered to one of the two copper foils of each PPTC chip and to the two electrodes of the TVS diode, so as to form the composite circuit protection device shown in fig. 4.
< examples 5 to 8(E5-E8) >
The process conditions of the composite circuit protection device of E5-E8 are similar to those of E1-E4, respectively, with the difference that the TVS diode of E5-E8 is manufactured in SMAJ75A (available from Baifulin corporation, Inc., with a thickness of 0.3 mm). The results of measuring the properties of the TVS diodes of E5-E8 are shown in Table 2.
TABLE 2
Breakdown voltage a Clamped voltage b
TVS SMAJ75A 83.3V 121V
a: measured at 1 mA.
b: in the pulse waveform (t) p )10/1000 μ s and pulse current (I) p ) Measured under 3.3A.
< comparative examples 1 and 2(CE1 and CE2) >
The circuit protection devices of CE1 and CE2 are PPTC chips of E1 and E2, respectively, i.e., neither of CE1 and CE2 contains a TVS diode, and the first and second conductive leads are soldered to the two copper foils of each PPTC chip, respectively.
< comparative examples 3 and 4(CE3 and CE4) >
The circuit protection devices of CE3 and CE4 are TVS diodes of E1 and E5, respectively, i.e., no PPTC die is included in both CE3 and CE4, and the first and second conductive leads are soldered to the two electrodes of each TVS diode, respectively.
The circuit protection devices of E1-E8 and CE1-CE4 are all structured as shown in Table 3.
TABLE 3
Figure BDA0002918521070000091
"- -" indicates the absence of such an element.
Performance testing
[ Surge immunity test ]
The spike immunity test was performed on 10 circuit protection devices of E1-E4 and CE1-CE3, respectively, as test samples. The surge immunity test of each test sample was performed at a voltage (30V) greater than the breakdown voltage of the TVS diode dc Or 40V dc ) The current (0.1A or 10A) of overcurrent to the lower and PPTC chips was tested by first turning on the first and second conductive leads for 60 seconds and then turning off the leads. If neither the PPTC chip nor the TVS diode is burned or damaged, the test sample passes the spike immunity test and the average value of the time that the PPTC chip trips (if any) is recorded. If the PPTC die or TVS diode burns out, the test sample is burnt out and the average value of the time it takes for burning out is recorded. The results are shown in Table 4, respectively.
TABLE 4
Figure BDA0002918521070000101
Table 4 the results show that the test sample containing only the TVS diode of CE3 burned out within 0.2s at 0.1A of overcurrent and overvoltage (greater than the breakdown voltage of the TVS diode) or within 0.1s at 10A of overcurrent and overvoltage, and the damage could not be repaired. In contrast, all test samples containing the combination of PPTC platelets and TVS diodes of E1-E4 passed the spike immunoassay without burning out. In addition, the test specimens with perforations formed in the PPTC chips of E2 and E4 increased heat transfer, further shortened the time for the PPTC chips to trip, and prevented overcurrent from flowing through the TVS diodes, thus protecting the TVS diodes from burning. In other words, in the test samples of E1-E4, when the PPTC die tripped before the TVS diode burned out, its TVS diode was not damaged. In addition, although the PPTC die of E3 and E4 is connected in parallel with the TVS diode, its PPTC die will still trip before the TVS diode burns out, thus protecting its TVS diode from burning out.
In addition, 10 circuit protection devices of E5-E8 and CE1, CE2, and CE4 were each used as a test sample, and a spike immunity test was performed. The surge immunity test of each test sample was performed at a voltage (90V) greater than the breakdown voltage of the TVS diode dc Or 120V dc ) The current (0.1A or 5A) of overcurrent to the lower and PPTC chips was tested by first turning on the first and second conductive leads for 60 seconds and then turning off. If neither the PPTC chip nor the TVS diode is burned or damaged, the test sample passes the spike immunity test and the average value of the time that the PPTC chip trips (if any) is recorded. If the PPTC die or TVS diode burns out, the test sample is burnt out and the average value of the time it takes for burning out is recorded. The results are shown in Table 5, respectively.
TABLE 5
Figure BDA0002918521070000111
The results in Table 5 show that the test specimens of CE1 and CE2, which contained only PPTC chips, burned out at 0.1A or 5A overcurrent and overvoltage (greater than the rated voltage of the PPTC chip); the test sample of CE4 containing only TVS diodes burned out within 0.26s at 0.1A of overcurrent and overvoltage (greater than the breakdown voltage of TVS diodes) or within 0.14s at 5A of overcurrent and overvoltage, and the damage could not be repaired. In contrast, all test samples containing the combination of PPTC platelets and TVS diodes of E5-E8 passed the spike immunoassay without burning out. In addition, the test specimens with perforations formed in the PPTC chips of E6 and E8 increased heat transfer, further shortened the time for the PPTC chips to trip, and prevented overcurrent from flowing through the TVS diodes, thus protecting the TVS diodes from burning. Furthermore, although the PPTC chips of E7 and E8 are connected in parallel with the TVS diode, their PPTC chips still trip before the TVS diode burns out at a breakdown voltage greater than that of the TVS diode. Furthermore, while the test specimens of E5-E8 were tested at overvoltages greater than the rated voltage of the PPTC die, by setting the sum of the rated voltage of the PPTC die and the breakdown voltage of the TVS diode greater than the overvoltage of the test, the test specimens of E5-E8 still pass the surge immunity test via the voltage division effect (voltage division effect) between the PPTC die and the TVS diode.
In summary, since the PTC device 2 has a rated voltage between 50% and 250% of the breakdown voltage of the diode device 3 measured at 1mA, the PTC device 2 can rapidly jump to a high resistance state in the presence of the overcurrent and the overvoltage to protect the diode device 3 from being burned out by the overcurrent or the overvoltage, and the composite circuit protection device of the present invention can be repeatedly used to exhibit excellent durability and reliability, thereby achieving the object of the present invention.
The above description is only an example of the present invention, and the scope of the present invention should not be limited thereby, and the invention is still within the scope of the present invention by simple equivalent changes and modifications made according to the claims and the contents of the specification.

Claims (20)

1. A kind of hybrid circuit protection device, characterized by: the composite circuit protection device comprises:
a PTC element comprising
A PTC layer having two opposite surfaces, and
the first electrode layer and the second electrode layer are respectively arranged on two opposite surfaces of the PTC layer;
a diode element connected to the second electrode layer;
a first conductive lead connected to the first electrode layer; and
a second conductive lead connected to the diode element,
wherein the PTC element has a rated voltage between 50% and 250% of the breakdown voltage of the diode element measured at 1 mA.
2. The composite circuit protection device of claim 1, wherein: the PTC element has a rated voltage of 70% to 230% of the breakdown voltage of the diode element measured at 1 mA.
3. The composite circuit protection device of claim 1, wherein: the overvoltage of the composite circuit protection device is less than the sum of the rated voltage of the PTC element and the breakdown voltage of the diode element.
4. The composite circuit protection device of claim 1, wherein: the PTC element has a hole formed in the PTC layer.
5. The composite circuit protection device of claim 4, wherein: the PTC layer of the PTC element has a periphery defining a boundary of the PTC layer and interconnecting two opposing surfaces of the PTC layer, and the holes are spaced from the periphery of the PTC layer.
6. The composite circuit protection device of claim 4, wherein: the hole extends through at least one of the two PTC opposing surfaces of the PTC layer.
7. The composite circuit protection device of claim 6, wherein: the hole also penetrates through at least one of the first electrode layer and the second electrode layer.
8. The composite circuit protection device of claim 1, wherein: the diode element comprises
A diode structure having two opposing surfaces,
a third electrode layer disposed on one of two opposite surfaces of the diode structure and connected to the second electrode layer of the PTC element, an
A fourth electrode layer disposed on the other of the two opposite surfaces of the diode structure,
wherein the second conductive lead is connected to one of the third electrode layer and the fourth electrode layer of the diode element.
9. The composite circuit protection device of claim 8, wherein: the composite circuit protection device further comprises a third conductive lead, wherein the second conductive lead is connected to the fourth electrode layer, and the third conductive lead is connected and arranged between the second electrode layer and the third electrode layer.
10. The composite circuit protection device of claim 1, wherein: the PTC element and the diode element are connected in series.
11. The composite circuit protection device of claim 1, wherein: the PTC element and the diode element are connected in parallel.
12. The composite circuit protection device of claim 1, wherein: the diode element is a transient voltage suppressor diode.
13. The composite circuit protection device of claim 12, wherein: the TVS diode includes a silicon wafer having a PN junction.
14. The composite circuit protection device of claim 1, wherein: the PTC element is a polymeric PTC element and the PTC layer is a PTC polymer layer.
15. The composite circuit protection device of claim 14, wherein: the PTC polymer layer includes a polymer base material and a conductive filler dispersed in the polymer base material.
16. The composite circuit protection device of claim 15, wherein: the polymer substrate is made from a polymer composition containing a non-grafted olefin polymer.
17. The composite circuit protection device of claim 16, wherein: the polymer composition also includes an olefin-based polymer grafted with a carboxylic acid anhydride.
18. The composite circuit protection device of claim 15, wherein: the conductive filler is selected from carbon black powder, metal powder, conductive ceramic powder or a combination of the foregoing.
19. The composite circuit protection device of claim 1, wherein: the composite circuit protection device also comprises a packaging material, wherein the packaging material packages the PTC element, the diode element, part of the first conductive lead and part of the second conductive lead.
20. The composite circuit protection device of claim 19, wherein: the packaging material is made of epoxy resin.
CN202110108817.0A 2021-01-27 2021-01-27 Composite circuit protection device Pending CN114823018A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110108817.0A CN114823018A (en) 2021-01-27 2021-01-27 Composite circuit protection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110108817.0A CN114823018A (en) 2021-01-27 2021-01-27 Composite circuit protection device

Publications (1)

Publication Number Publication Date
CN114823018A true CN114823018A (en) 2022-07-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110108817.0A Pending CN114823018A (en) 2021-01-27 2021-01-27 Composite circuit protection device

Country Status (1)

Country Link
CN (1) CN114823018A (en)

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