CN116437771A - Perovskite laminated photovoltaic module with serial-parallel structure and preparation method thereof - Google Patents

Abstract

The invention discloses a perovskite laminated photovoltaic module with a series-parallel structure and a preparation method thereof. The preparation method of the invention separates the modules formed by the series sub-cells by introducing L-shaped scribing so as to realize parallel connection; the voltage of the assembly can be adjusted by adjusting the number of sub-cells in the series module; the current of the assembly can be adjusted by adjusting the number of parallel modules.

Description

Perovskite laminated photovoltaic module with serial-parallel structure and preparation method thereof

Technical Field

The invention belongs to the technical field of solar cells, and particularly relates to a perovskite laminated photovoltaic module with a series-parallel structure and a preparation method thereof.

Background

The organic-inorganic hybrid perovskite solar cell has rapid development in recent years, the photoelectric conversion efficiency is improved from 3.8% in 2009 to 25.7% of 2022, the greatest advantages are low cost and easy processing, and along with the continuous promotion of the industrialization technology, the large-area and component preparation process of the organic-inorganic hybrid perovskite solar cell also become key parts in the preparation of perovskite photovoltaic components.

For the perovskite laminated cell, the solar spectrum segmented absorption and utilization of the wide band gap and narrow band gap materials can greatly reduce the thermal relaxation loss, improve the conversion efficiency of the cell, and is a technology for further improving the efficiency and reducing the cost of the existing perovskite cell. Therefore, developing a high-efficiency large-area perovskite stacked cell assembly is critical to the development of a push perovskite.

The prior perovskite laminated assembly is often prepared into a structure with sub-batteries connected in series by adopting laser scribing P1, P2, P3, P4 and other ways (Science 376, 762-767), because the perovskite laminated assembly has the characteristics that the open circuit voltage is the superposition of two sub-batteries, compared with 0.7V of a crystalline silicon single chip, the output voltage of the perovskite laminated assembly is higher than 2.1V, and the number of the sub-batteries connected in series is increased along with the enlargement of the area of the assembly, under the condition that the photovoltaic assembly with 1 mm 2m is prepared, the perovskite laminated assembly can reach the output voltage close to 300V, and the current density is only 0.1mAcm ^-2 Under the condition of limited load of the construction voltage of the power station, the number of load tolerant components is greatly reduced, compared with the output voltage of the crystalline silicon component which is 38V only, and the current is 0.6mAcm ^-2 (60cell,38mA cm ^-2 ) More components may be loaded.

The ultra-high voltage of the laminated assembly not only easily causes higher breakdown risk of devices, but also causes overlarge voltage load in power station construction, and meanwhile, smaller current is limited in a plurality of common application scenes, so that the perovskite laminated assembly is not suitable for a full series structure any more, and a new assembly structure is required to be designed to adjust the open-voltage current of the laminated assembly and the like to adapt to practical application scenes.

Disclosure of Invention

The invention aims to provide a perovskite laminated photovoltaic module preparation method with a series-parallel structure, which can adjust the number of serial sub-cells and the number of parallel modules according to requirements, so as to design different module voltages and currents, further reduce the open voltage of the laminated module, and improve the current value of the whole module to adapt to practical application.

In order to achieve the above purpose, the present invention adopts the following technical scheme:

a preparation method of a perovskite laminated photovoltaic module with a serial-parallel structure comprises the following steps:

step 1, providing a transparent substrate layer with a transparent bottom electrode, cutting the bottom electrode by adopting a laser scribing line P1 to divide the bottom electrode into a plurality of battery units, removing a 5mm area on the left and right edges and a 10mm area on the upper and lower edges, and reserving bottom electrodes of odd module areas at intervals of 10mm above as the bottom electrodes connected in parallel subsequently;

step 2, preparing each layer of the laminated device: forming a first hole transport layer on the transparent bottom electrode, forming a wide band gap perovskite layer on the first hole transport layer, forming a first electron transport layer on the wide band gap perovskite layer, forming a tunneling layer on the first electron transport layer, forming a second hole transport layer on the tunneling layer, forming a narrow band gap perovskite layer on the second hole transport layer, forming a second electron transport layer on the narrow band gap perovskite layer, and forming a buffer layer on the second electron transport layer;

step 3, a laser is used for scribing a line P2 on the right side of the scribing line P1, a buffer layer, a second electron transport layer, a narrow-band gap perovskite layer, a second hole transport layer, a tunneling layer, a first electron transport layer, a wide-band gap perovskite layer and a first hole transport layer are cut off, and the whole laminated device is divided into a plurality of battery units;

step 4, forming a back electrode on the buffer layer;

step 5, cutting off a back electrode, a buffer layer, a second electron transport layer, a narrow-band gap perovskite layer, a second hole transport layer, a tunneling layer, a first electron transport layer, a wide-band gap perovskite layer and a first hole transport layer by using laser on a right side of the scribing line P2, and forming a plurality of battery units into a serial structure;

step 6, removing the four laminated device film layers, exposing a reserved bottom electrode above, and reserving a part of metal electrode below for parallel connection with a top electrode;

step 7, taking the edges of the odd sub-cells as a reference, and making the lower part of the sub-cells flush with the lower end of the sub-cells, scribing an L-shaped penetrating scribing line, scribing the whole structure to a transparent substrate layer, and separating modules formed by the series sub-cells to realize the division and insulation treatment of the parallel structure;

and 8, respectively connecting a top electrode and a bottom electrode led out from the serial modules, so that the parallel connection among perovskite serial sub-battery modules is realized, and component electron holes are led out through positive and negative bus bars.

Further, the substrate layer is a glass substrate; the bottom electrode is made of an ITO conductive film layer, an FTO conductive film layer or an AZO conductive film layer.

The perovskite laminated photovoltaic module prepared by the method is provided.

Compared with the prior art, the preparation method of the perovskite laminated photovoltaic module with the serial-parallel structure has the following advantages:

1. the voltage of the assembly can be regulated by regulating the number of the sub-batteries in the series module, and the smaller the number of the sub-batteries is, the smaller the voltage is, so that the open-circuit voltage of the laminated assembly can be effectively reduced.

2. The current of the assembly can be adjusted by adjusting the number of parallel modules. The more the number of parallel modules is, the larger the current is, so that the component current can be effectively improved, and more devices are compatible.

3. The L-shaped scribing is introduced to separate modules formed by the series sub-cells so as to realize parallel connection, so that the dead area of the assembly is reduced, the utilization rate is higher, and the overall conversion efficiency is improved.

Drawings

Fig. 1 is a schematic cross-sectional view of a perovskite stacked photovoltaic module having a series-parallel structure according to the present invention.

Fig. 2 is a process of manufacturing a perovskite stacked photovoltaic module having a series-parallel structure according to the present invention.

Fig. 3 shows a structure in which a plurality of sub-cells are connected in series and in parallel.

Detailed Description

The invention will now be described in further detail with reference to the drawings and specific examples, which should not be construed as limiting the invention. . It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.

Example 1

The embodiment discloses a preparation method of a perovskite laminated photovoltaic module with a serial-parallel structure, as shown in fig. 1, 4 sub-battery modules are designed in the embodiment, 2 strings of perovskite laminated photovoltaic modules are 2-serial, and the perovskite laminated photovoltaic module comprises: a glass substrate 001, a transparent conductive layer 002, layers 003-010 of the laminated device, and a metal or transparent conductive oxide back electrode 011.

As shown in fig. 2, the preparation method comprises the following specific steps:

step one: scribing a scribing line P1 with a distance of 7mm on a 30 x 30mm glass substrate 001 containing fluorine-doped tin dioxide transparent conductive oxide by using a laser, and scribing the transparent conductive layer 002 to divide the transparent conductive layer 002 into four mutually independent blocks; the left and right edges are cleared of a 5mm area, the upper and lower edges are cleared of a 10mm area for connecting the electrodes in series-parallel connection later, and meanwhile, the conductive electrodes of partial odd module areas are reserved above the conductive electrodes at intervals of 10mm and used as bottom electrodes in the subsequent parallel connection. The resistance between the individual conductive oxides is infinite.

Step two: deposition preparation of each layer of a laminated device: the preparation of each layer 003-010 of the stacked device comprises a wide band gap perovskite layer 004, electron hole transport layers 003 and 005 thereof, a tunneling layer 006, a wide band gap perovskite layer 008, electron hole transport layers 007 and 009 thereof, and a buffer layer 010. Specific:

preparing a layer of 20nm nickel oxide serving as a hole transport layer 003 on the cleaned substrate marked with P1;

depositing a layer of wide bandgap perovskite 004 on the prepared hole transport layer 003, the thickness being about 300nm;

preparing a layer of fullerene (C60) as an electron transport layer 005 using thermal evaporation, the thickness being about 30nm;

next, atomic layer deposition is used to grow a layer of SnO on C60 ₂ As a dense layer, the thickness was 20nm.

The tunneling composite layer adopts Au,006 with thickness of 2nm by thermal evaporation.

The p-type hole transport layer 007 was prepared using poly 3, 4-ethylenedioxythiophene, polystyrene sulfonate (PEDOT: PSS);

next, preparing a second layer of narrow band gap perovskite 008 with a thickness of about 1000 nm;

preparing a layer of C60 by thermal evaporation equipment to obtain a transmission layer 009 with a thickness of 30nm, and growing a layer of SnO on the C60 by atomic layer deposition ₂ As a dense layer, thickThe degree was 20nm, yielding buffer layer 010.

Step three: the second scribing is performed by using a laser, unlike the conventional serial structure, in which the isolation of the subcells is performed according to the number of serial modules in the serial-parallel design, in this embodiment, 4 subcell modules are designed, 2 serial-parallel is performed, 2 laser lines are scribed, the right shift 160 μm is performed according to the position of the odd-numbered scribing line P1, and the scribing region P2 is required to scribe each film layer of the stacked device without damaging the transparent conductive layer.

Step four: a layer of Cu with a thickness of 150nm is evaporated by thermal evaporation or indium tin oxide with a thickness of 100nm is sputtered as a back electrode 011.

Step five: after the preparation of the metal back electrode is finished, each scribing line P2 is used as a reference, the right offset is 160 mu m, and the scribing lines P3 and P3 can realize the whole film layer scribing without damaging the conductive film layer by adjusting the laser frequency, the moving speed and the power.

Step six: and removing the film layers of the four laminated devices by using high-power laser, removing 7mm left and right, removing 10mm above and removing 5mm below, and reserving part of transparent conductive bottom electrodes.

Step seven: the laser is adopted, the edge of the odd sub-cell is used as a reference, the lower part of the laser is flush with the lower end of the sub-cell, L-shaped through scribing lines with the number of the odd sub-cell are scribed, and the L-shaped through scribing lines directly reach the substrate glass. The two L-shaped through wires isolate the serially connected sub-battery modules to form a plurality of serially connected sub-modules which are independent respectively. The step directly cuts the glass substrate 001, so that the main separation effect of the series-parallel structure is formed, the whole dead area can be reduced, and the dead area width of a plurality of 300 mu m is reduced.

Step eight: and respectively connecting the top electrode and the bottom electrode by using welding belts through an ultrasonic welding head roller press to form positive and negative electrodes in a parallel structure.

Table 1 series stack module performance and series-parallel stack cell module performance

As can be seen from the table, the series-parallel structure can achieve the effects of adjusting the voltage and the current of the assembly and improving the overall conversion efficiency.

Claims (3)

1. A preparation method of a perovskite laminated photovoltaic module with a series-parallel structure is characterized by comprising the following steps of: the method comprises the following steps:

step 1, providing a transparent substrate layer with a transparent bottom electrode, cutting the bottom electrode by adopting a laser scribing line P1 to divide the bottom electrode into a plurality of battery units, removing a 5mm area on the left and right edges and a 10mm area on the upper and lower edges, and reserving bottom electrodes of odd module areas at intervals of 10mm above as the bottom electrodes connected in parallel subsequently;

step 2, preparing each layer of the laminated device: forming a first hole transport layer on the transparent bottom electrode, forming a wide band gap perovskite layer on the first hole transport layer, forming a first electron transport layer on the wide band gap perovskite layer, forming a tunneling layer on the first electron transport layer, forming a second hole transport layer on the tunneling layer, forming a narrow band gap perovskite layer on the second hole transport layer, forming a second electron transport layer on the narrow band gap perovskite layer, and forming a buffer layer on the second electron transport layer;

step 3, a laser is used for scribing a line P2 on the right side of the scribing line P1, a buffer layer, a second electron transport layer, a narrow-band gap perovskite layer, a second hole transport layer, a tunneling layer, a first electron transport layer, a wide-band gap perovskite layer and a first hole transport layer are cut off, and the whole laminated device is divided into a plurality of battery units;

step 4, forming a back electrode on the buffer layer;

step 5, cutting off a back electrode, a buffer layer, a second electron transport layer, a narrow-band gap perovskite layer, a second hole transport layer, a tunneling layer, a first electron transport layer, a wide-band gap perovskite layer and a first hole transport layer by using laser on a right side of the scribing line P2, and forming a plurality of battery units into a serial structure;

step 6, removing the four laminated device film layers, exposing a reserved bottom electrode above, and reserving a part of metal electrode below for parallel connection with a top electrode;

step 7, taking the edges of the odd sub-cells as a reference, and making the lower part of the sub-cells flush with the lower end of the sub-cells, scribing an L-shaped penetrating scribing line, scribing the whole structure to a transparent substrate layer, and separating modules formed by the series sub-cells to realize the division and insulation treatment of the parallel structure;

and 8, respectively connecting a top electrode and a bottom electrode led out from the serial modules, so that the parallel connection among perovskite serial sub-battery modules is realized, and component electron holes are led out through positive and negative bus bars.

2. The method of manufacturing according to claim 1, characterized in that: the substrate layer is a glass substrate; the bottom electrode is made of an ITO conductive film layer, an FTO conductive film layer or an AZO conductive film layer.

3. The perovskite laminated photovoltaic module prepared by the method of claim 1.

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