CN116436285A - Power module and electronic equipment - Google Patents

Abstract

The embodiment of the application provides a power module and electronic equipment, wherein the power module comprises a voltage conversion unit, an inductance unit and an output capacitance unit. The voltage conversion unit comprises a first substrate and a chip arranged on the first substrate, wherein the chip is used for performing voltage conversion on input voltage. The inductance unit is arranged on the surface of the first substrate and comprises at least one inductance element electrically connected with the chip, and the output capacitance unit is arranged on one side, far away from the first substrate, of the inductance unit and comprises at least one output capacitance element electrically connected with the inductance unit. The side of the input capacitance unit, which is far away from the inductance unit, is electrically connected with a load in the electronic device to supply power to the load. According to the embodiment of the application, the power supply path loss of the power supply module for supplying power to the load can be reduced, and the requirement of the high-current power supply module for higher power density can be met.

Description

Power module and electronic equipment

Technical Field

The embodiment of the application relates to the technical field of power supply equipment, and more particularly relates to a power supply module and electronic equipment.

Background

The power supply module mainly includes a power switch (e.g., metal oxide semiconductor field effect transistor (Metallic Oxide Semiconductor Field Effect Transistor, MOSFET)), an inductance, an input capacitance, an output capacitance, and the like. At present, the structural design of the power module is to lay the electronic elements on the substrate in a flat manner, and the power module is suitable for the design of the power module with medium and small power and medium and small current.

With the development of the digital society, loads such as network chips, central processing units (central processing unit, CPUs), artificial intelligence chips and the like are required to provide higher capacity and stronger operation processing capacity, so that the loads need larger current when in operation. In order to meet the demand of the load for larger currents, and limited by the size of the power supply module, the power density of the required power supply module is higher and higher.

However, in the above-mentioned design of the power module structure for medium and small power and medium and small current, the power supply path loss of the power module is large, and the requirement of the power module with large current for high power density cannot be met.

Disclosure of Invention

The embodiment of the application provides a power supply module and electronic equipment, and aims to reduce the power supply path loss of the power supply module for supplying power to a load so as to meet the requirement of the high-current power supply module on higher power density, and further be favorable for meeting the high-current requirement of the load.

In a first aspect, there is provided a power module comprising: the voltage conversion unit comprises a first substrate and a chip, wherein the chip is arranged on the first substrate and is used for performing voltage conversion on input voltage; the inductance unit is arranged on the first surface of the first substrate and comprises at least one inductance element which is electrically connected with the chip; the output capacitor unit is arranged on one side, far away from the first substrate, of the inductance unit and comprises at least one output capacitor element, and the at least one output capacitor element is electrically connected with the inductance unit; the inductance unit and the output capacitance unit are used for carrying out output processing on the converted voltage to obtain output voltage, and one side, far away from the inductance unit, of the output capacitance unit is electrically connected with a load so as to input and output the voltage to the load.

Wherein the chip may be constituted by a MOSFET for DC/DC voltage conversion of the input voltage.

Alternatively, the chip may be embedded in the first substrate; alternatively, the chip may be a flip chip, and soldered on a second surface of the first substrate, where the second surface is a surface of the chip opposite to the first surface.

It should be understood that the inductance unit and the output capacitance unit may perform output processing such as rectifying and filtering on the input voltage converted by the voltage conversion unit, so that the voltage and the current of the output voltage transmitted to the load are more stable and smooth.

In this embodiment of the application, through stacking voltage conversion unit, inductance unit and output capacitance unit in proper order and setting, the one side that keeps away from the inductance unit of output capacitance unit is connected with the load electricity, can make power module adopt the mode of perpendicular power supply to supply power to the load. Compared with the fact that chips and other electronic elements are tiled on the first substrate, the power supply path for supplying power to a load by the power supply module can be shortened, loss on the power supply path is reduced, power density of the power supply module is improved, and high current requirements of the load are met. Meanwhile, shortening of the power supply path is also beneficial to alleviating the problem of current supply failure caused by larger impedance of the power supply path, and ensuring that the power supply module supplies power to the load normally. In addition, through stacking the voltage conversion unit, the inductance unit and the output capacitance unit in sequence and integrating the arrangement, the whole volume of the power module can be reduced, and the integration and miniaturization design are facilitated.

Optionally, the power module may further include at least one first passive device disposed on the first surface and/or the second surface of the first substrate, for processing the input voltage and transmitting the processed voltage to the inductance element.

The first passive device may be, for example, an input capacitive element, a resistive element, a reactor, or the like.

With reference to the first aspect, in certain implementations of the first aspect, the power module further includes a first dielectric layer and a first conductive structure; the at least one inductance element is welded on the first surface, and the first dielectric layer is arranged on the first surface and used for encapsulating the at least one inductance element; the first conductive structure is disposed on the first surface for electrical connection between the at least one inductive element and the output capacitive unit.

It should be appreciated that the first dielectric layer may be formed by plastic encapsulation of the inductive element. The first dielectric layer may include a thermally-curable cross-linked resin, such as an epoxy injection molding compound.

Alternatively, the first conductive structure may be a copper pillar connector or a PCB connector or the like.

With reference to the first aspect, in some implementations of the first aspect, an end of the first conductive structure, which is close to the first substrate, is electrically connected to the inductance element, and a surface of the first conductive structure, which is far away from the first substrate, may expose the first dielectric layer, and a first connection layer is provided for welding connection with the output capacitor unit. The first connection layer may be, for example, a solder paste layer formed by a solder paste brushing process, or a metal layer formed by a surface metallization process.

In the embodiment of the application, the inductance element is welded on the first surface of the first substrate, and the voltage conversion unit and the inductance unit are integrated on the first substrate through plastic packaging of the first dielectric layer, so that a first sub-module of the power supply module is formed. The first sub-module may be electrically connected to the output capacitor unit through a first conductive structure to form a stacked integrated power module.

With reference to the first aspect, in certain implementations of the first aspect, the power module further includes a second substrate disposed opposite the first substrate, a surface of the second substrate facing the first substrate being electrically connected to the first surface; at least one inductive element is disposed on the second substrate.

Alternatively, the inductance element may be embedded in the second substrate; alternatively, the inductance element may be soldered to a surface of the second substrate remote from the first substrate.

In this embodiment of the present application, the inductance element may be separately disposed on the second substrate, and electrically connected to the first substrate through the second substrate, so as to integrate the inductance unit and the voltage conversion unit.

With reference to the first aspect, in certain implementations of the first aspect, the power module further includes a second dielectric layer, at least one output capacitive element is soldered on a surface of the second substrate remote from the first substrate, and the second dielectric layer is disposed on a surface of the second substrate remote from the first substrate, for encapsulating the at least one output capacitive element.

It should be appreciated that the second dielectric layer may be formed by plastic encapsulation of the output capacitive element. The second dielectric layer may include a thermally-curable cross-linked resin, such as an epoxy injection molding compound.

In this embodiment of the present application, the output capacitor element is encapsulated on the second substrate through the second dielectric layer, so that the inductance unit and the output capacitor unit are integrated on the second substrate, to form a second sub-module of the power module, and the second sub-module is electrically connected with the first substrate, to form a stacked and integrated power module.

With reference to the first aspect, in certain implementations of the first aspect, the power module further includes a second conductive structure disposed on a surface of the second substrate remote from the first substrate for electrical connection between the at least one output capacitive element and the load.

Alternatively, the second conductive structure may be a copper pillar connector or a PCB connector or the like.

With reference to the first aspect, in certain implementations of the first aspect, a surface of the second conductive structure remote from the second substrate exposes the second dielectric layer, and a second connection layer is provided for solder connection with the load to supply power to the load.

The second connection layer may be, for example, a solder paste layer formed by a solder paste brushing process or a metal layer formed by a surface metallization process.

With reference to the first aspect, in certain implementations of the first aspect, the power module further includes a third substrate disposed opposite the first substrate, and the at least one output capacitive element is disposed on the third substrate.

Alternatively, the output capacitance element may be embedded in the third substrate; alternatively, the output capacitive element may be soldered to a surface of the third substrate facing the first substrate.

In this embodiment of the present application, the output capacitive element may be separately disposed on the third substrate, and electrically connected to the inductance unit through a wiring layer of the third substrate, or through a conductive structure disposed, so as to integrate with the inductance unit and the voltage conversion unit.

With reference to the first aspect, in certain implementations of the first aspect, the power module further includes a plurality of connection pins, where the plurality of connection pins are disposed on a surface of the third substrate remote from the first substrate, for connecting a load to supply power to the load.

With reference to the first aspect, in certain implementation manners of the first aspect, the power supply module includes a plurality of voltage conversion units and a plurality of inductance units, where the plurality of voltage conversion units are disposed corresponding to the plurality of inductance units, and the plurality of inductance units are electrically connected to the output capacitance unit.

In this application embodiment, output capacitor unit can be integrated with a plurality of voltage conversion units and a plurality of inductance unit, is favorable to improving power module's supply current, is favorable to satisfying the great current's of load demand.

In a second aspect, there is provided an electronic device comprising: the device comprises a shell, a circuit board, a power module and a load, wherein the circuit board, the power module and the load are contained in the shell, and the power module is arranged on the circuit board. Wherein, the power module includes: the voltage conversion unit comprises a first substrate and a chip, wherein the chip is arranged on the first substrate and is used for performing voltage conversion on input voltage; the inductance unit is arranged on the first surface of the first substrate and comprises at least one inductance element, and the at least one inductance element is electrically connected with the chip; the output capacitor unit is arranged on one side, far away from the first substrate, of the inductance unit and comprises at least one output capacitor element, and the at least one output capacitor element is electrically connected with the inductance unit; the inductance unit and the output capacitance unit are used for carrying out output processing on the converted voltage to obtain output voltage, and one side, far away from the inductance unit, of the output capacitance unit is electrically connected with the load so as to input the output voltage to the load.

With reference to the second aspect, in certain implementations of the second aspect, the power module further includes a first dielectric layer and a first conductive structure; the at least one inductance element is welded on the first surface, and the first dielectric layer is arranged on the first surface and used for encapsulating the at least one inductance element; the first conductive structure is disposed on the first surface and is used for electrically connecting the at least one inductance element and the output capacitor unit.

With reference to the second aspect, in certain implementations of the second aspect, the power module further includes a second substrate disposed opposite the first substrate, a surface of the second substrate facing the first substrate is electrically connected to the first surface, and the at least one inductance element is disposed on the second substrate.

With reference to the second aspect, in certain implementations of the second aspect, the power module further includes a second dielectric layer, and the at least one output capacitive element is soldered on a surface of the second substrate remote from the first substrate, and the second dielectric layer is disposed on a surface of the second substrate remote from the first substrate, and is configured to encapsulate the at least one output capacitive element.

With reference to the second aspect, in certain implementations of the second aspect, the power module further includes a second conductive structure disposed on a surface of the second substrate remote from the first substrate for electrical connection between the at least one output capacitive element and the load.

With reference to the second aspect, in some implementations of the second aspect, the power module further includes a third substrate disposed opposite the first substrate, and the at least one output capacitive element is disposed on the third substrate.

With reference to the second aspect, in certain implementations of the second aspect, the power module further includes a plurality of connection pins, where the plurality of connection pins are disposed on a surface of the third substrate away from the first substrate, for connecting the load.

With reference to the second aspect, in some implementations of the second aspect, the power module includes a plurality of voltage conversion units and a plurality of inductance units, the plurality of voltage conversion units are disposed corresponding to the plurality of inductance units, and the plurality of inductance units are electrically connected to the output capacitance unit.

The technical effects that may be achieved by the second aspect may be described with reference to the technical effects in the first aspect, which are not described herein.

Drawings

Fig. 1 is a schematic block diagram of an electronic device according to an embodiment of the present application.

Fig. 2 is a schematic diagram of a power supply architecture of a power module for supplying power to a load according to an embodiment of the present application.

Fig. 3 is a schematic diagram of a power supply architecture of a power module for supplying power to a load according to another embodiment of the present application.

Fig. 4 is a schematic structural diagram of a power module according to an embodiment of the present application.

Fig. 5 is a schematic structural diagram of a power module according to an embodiment of the present application.

Fig. 6 is a schematic structural diagram of another power module according to an embodiment of the present application.

Fig. 7 is a schematic structural diagram of another power module according to an embodiment of the present application.

Fig. 8 is a schematic structural diagram of another power module according to an embodiment of the present application.

Fig. 9 to 16 are schematic diagrams of a manufacturing process of a power module according to an embodiment of the present application.

Fig. 17 to 21 are schematic diagrams illustrating a manufacturing process of another power module according to an embodiment of the present application.

Detailed Description

The technical solutions in the embodiments of the present application will be described below with reference to the accompanying drawings.

In order to facilitate understanding of the embodiments of the present application, the following description is made before describing the embodiments of the present application.

In the description of the embodiments herein, "electrically connected" may be understood as having components in physical contact and electrical continuity; the circuit structure can also be understood as a form of connecting different components through solid circuits such as copper foils or wires of a printed circuit board (printed circuit board, PCB) and the like which can transmit electric signals; it is also understood that the electrical conduction is isolated by means of indirect coupling. "coupled" is understood to mean electrically isolated conduction by indirect coupling, wherein it is understood by those skilled in the art that coupling refers to the phenomenon in which there is a close fit and interaction between the input and output of two or more circuit elements or electrical networks and the transfer of energy from one side to the other through interaction.

In the description of the embodiments of the present application, unless otherwise indicated, "/" means or, for example, a/B may represent a or B; "and/or" herein is merely an association relationship describing an association object, and means that three relationships may exist, for example, a and/or B may mean: a exists alone, A and B exist together, and B exists alone.

In the present embodiments, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defining "first", "second" may include one or more features judiciously or implicitly. In addition, in the description of the embodiments of the present application, "plurality" means two or more, and "at least one" and "one or more" mean one, two or more. The singular expressions "a", "an", "the" and "the" are intended to include, for example, also "one or more" such expressions, unless the context clearly indicates the contrary.

Reference in the specification to "one embodiment" or "some embodiments" or the like means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," and the like in the specification are not necessarily all referring to the same embodiment, but mean "one or more but not all embodiments" unless expressly specified otherwise. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless expressly specified otherwise.

In the embodiments of the present application, the same reference numerals denote the same components or the same parts, and for the same parts in the embodiments of the present application, reference numerals may be given to only one of the parts or the parts in the drawings by way of example, and it should be understood that, for other same parts or parts, the reference numerals are equally applicable. In addition, the various components in the drawings are not to scale, and the dimensions and sizes of the components shown in the drawings are merely exemplary and should not be construed as limiting the application.

In order to facilitate understanding of the power module provided in the embodiments of the present application, an application scenario of the power module provided in the embodiments of the present application is described below.

The power module provided by the embodiment of the application is applied to electronic equipment. Electronic devices referred to in embodiments of the present application may include handheld devices, vehicle mounted devices, wearable devices, computing devices, or other processing devices connected to a wireless modulation regulator. Such as cellular phones (cellphones), cell phones, smart phones (smart phones), tablet computers, laptop computers (laptop computers), video cameras, video recorders, cameras, smart watches (smart watches), smart bracelets (smart wristbands), etc. The electronic device according to the embodiment of the application may be any electric device, and the specific type of the electronic device is not limited in any way.

Fig. 1 is a schematic block diagram of an electronic device 100 according to an embodiment of the present application.

Referring to fig. 1, an electronic device 100 may include a housing 10, a power module 20, a load 30, and a circuit board (not shown). The power module 20, the load 30 and the circuit board are all accommodated in the housing 10. The power module 20 may be disposed on a circuit board, which may be, for example, a motherboard of the electronic device 100, to which the power module 20 is electrically connected.

The power module 20 may be electrically connected to the load 30 and the external power source 200, respectively, for outputting an input voltage input into the electronic device 100 by the external power source 200 to the load 30 for the load 30 to operate. The power module 20 may be a Direct Current (DC) -DC power module for converting direct current into direct current.

It will be appreciated that other power modules (not shown) may also be provided between the external power source 200 and the power module 20. For example, an Alternating Current (AC) -DC power module and a DC-DC power module may be further provided between the external power source 200 and the power module 20. The AC-DC power module may convert AC power input from the external power source 200 into DC power of 48V and output the DC power to the DC-DC power module. The DC-DC power module may convert the 48V direct current into 12V direct current and output to the power module 20. The power module 20 may convert the 12V dc power into 3.3V dc power and output to the load 30. The specific form and number of other power modules provided between the external power supply 200 and the power module 20 are not particularly limited in the embodiment of the present application.

The load 30 may be any power module within the electronic device 100, such as a network chip, a CPU, an artificial intelligence chip, a radio frequency module, etc., and the embodiment of the present application does not specifically limit the load 30.

Fig. 2 is a schematic diagram of another power supply architecture of the power module 20 for supplying power to the load 30 according to the embodiment of the present application. Fig. 3 is a schematic diagram of another example of a power supply architecture for supplying power to a load 30 by the power module 20 according to the embodiment of the present application.

Referring to fig. 2 and 3, the power module 20 may include a chip integrated structure 21 and an output capacitor 22. The chip integrated structure 21 is a structure formed by integrating a chip, an inductor, and an input capacitor. For example, the chip integrated structure 21 may be formed by embedding the chip, inductor, and input capacitor in an ECP package substrate by embedded electronic component package (Embedded Component Packaging, ECP) technology.

The chip may be formed, for example, by a MOSFET for DC/DC voltage conversion. The inductor, the input capacitor and the output capacitor can be used for carrying out output processing on the voltage converted by the chip. For example, the input capacitor may filter the chip-converted input voltage and transmit the filtered input voltage to the inductor. The inductor can perform output processing such as filtering on the filtered input voltage, and transmit the obtained output voltage to the output capacitor. The output capacitor may filter the output voltage and deliver the filtered output voltage to the load 30 to power the load 30.

In some embodiments, referring to fig. 2, the chip integrated structure 21 and the load 30 may be disposed on the front surface of the substrate 40, and the output capacitor 22 is disposed on the back surface of the substrate 40 and electrically connected to each other through the wiring layer of the substrate 40. In other embodiments, referring to fig. 3, the load 30 may be disposed on the front surface of the substrate 40, and the chip integrated structure 21 and the output capacitor 22 are disposed on the back surface of the substrate 40 and electrically connected to each other through the wiring layer of the substrate 40 for power supply and control.

It is understood that the front and back sides of the substrate 40 are merely relative concepts, and that the embodiments of the present application are not limited to a particular location of the front and back sides of the substrate 40.

As described in the background section above, as society becomes increasingly digital, the load 30 requires more and more current to operate, resulting in more and more current to the power module 20. In addition to the trend toward miniaturization of the electronic device 100, the size of the motherboard within the electronic device 100 is generally unchanged, which results in a limitation of the size of the power module 20 disposed on the motherboard. Accordingly, in order for the high-current power module 20 to meet the demand for smaller sizes, the power density of the power module 20 is required to be higher and higher accordingly.

However, in the power supply architecture shown in fig. 2 and 3, the power module 20 supplies power to the load 30 in a horizontal power supply manner. That is, the output voltage outputted from the chip integrated structure 21 needs to be transferred horizontally to the circuit layer of the substrate 40 for a certain distance before reaching the output capacitor 22, and then transferred from the output capacitor 22 to the load 30. The power supply path of the power supply module 20 for supplying power to the load 30 is longer, and the loss of the power supply path in the substrate 40 is larger, so that the power density of the power supply module 20 is lower, which is unfavorable for meeting the requirement of the high-current power supply module 20 for high power density. In addition, a longer power supply path also tends to make the impedance on the power supply path larger, thereby causing a problem of no current supply, resulting in failure to supply power to the load 30 normally.

Based on the above, the embodiment of the application provides a power module and an electronic device including the power module, which aims to reduce the power supply path loss when the power module supplies power to a load, so as to meet the requirement of the high-current power module on higher power density, thereby being beneficial to meeting the high-current requirement of the load.

Fig. 4 is a schematic structural diagram of a power module 300 according to an embodiment of the present application. It should be appreciated that the power module 300 may be the power module 20.

Referring to fig. 4, the power module 300 may include a voltage conversion unit 310, an inductance unit 320, and an output capacitance unit 330.

The voltage conversion unit 310 may include a first substrate 311 and a chip 312. The chip 312 may be disposed on the first substrate 311 for performing voltage conversion on an input voltage. Illustratively, the chip 312 may be formed of a MOSFET, which is a DC/DC voltage converter for DC/DC voltage conversion of an input voltage from the input power module 300. The first substrate 311 may be, for example, a carrier, which is not limited in this application.

In some embodiments, the chip 312 may be embedded within the first substrate 311. For example, the chip 312 may be embedded in the first substrate 311 and electrically connected to the first substrate 311 through an ECP process.

In other embodiments, the first substrate 311 may include a first surface 3111 and a second surface 3112 disposed opposite to each other, and the chip 312 is disposed on the second surface 3112 of the first substrate 311. For example, the chip 312 may be a flip chip, i.e., the chip 312 may be soldered on the second surface 3112 of the first substrate 311 and electrically connected to the first substrate 311 by a flip chip process. The embodiment of the present application does not limit the manner in which the chip 312 is mounted on the second surface 3112 of the first substrate 311.

It will be appreciated that for convenience of description and understanding, the embodiment of the present application will be described by taking the example that the chip 312 is disposed on the second surface 3112 of the first substrate 311.

The inductance unit 320 may be disposed on the first surface 3111 of the first substrate 311. The inductance unit 320 may include at least one inductance element 321, and the inductance element 321 is electrically connected to the chip 312 to rectify and filter the voltage converted by the chip 312, so that the output voltage and current transmitted to the load are more stable and smooth. Illustratively, referring to fig. 4, inductive element 321 may include inductive elements 321a and 321b connected in series. It should be appreciated that the specific number of inductive elements 321 included in inductive element 320 is not particularly limited in the embodiments of the present application, and may be adjusted according to actual production and design requirements.

It will be appreciated that inductive element 321 may be electrically connected to chip 312 in different ways. For example, in some embodiments, the inductive element 321 may be disposed directly on the first surface 3111 of the first substrate 311 and electrically connected to the first substrate 311 by a surface mount technology (surface mounted technology, SMT), thereby being coupled to the chip 312 through the first substrate 311. In other embodiments, the power module 300 may further include a second substrate (not shown). The second substrate is disposed opposite to the first substrate 311, and a surface of the second substrate facing the first substrate 311 is electrically connected to the first surface 3111 of the first substrate 311. The inductance element 321 may be disposed on the second substrate and electrically connected to the chip 312 through a conductive structure.

It should be noted that SMT is a common process technology in the electronic assembly industry. SMT may also be referred to as a surface mount technology or a surface mount technology, which is a circuit mounting technology for mounting a chip component such as a leadless or short-lead surface mount component (surface mounted components, SMC) or a surface mount device (surface mounted device, SMD) on a surface of a PCB or a surface of another substrate, and soldering the mounted component by a method such as flow soldering or dip soldering.

The output capacitance unit 330 may be disposed at a side of the inductance unit 320 away from the first substrate 311. That is, the voltage converting unit 310, the inductance unit 320, and the output capacitance unit 330 are sequentially stacked. The output capacitor unit 330 may include at least one output capacitor 331, where the output capacitor 331 is electrically connected to the inductor unit 320, and is used for filtering the voltage output by the inductor unit 320, so that the output voltage and current transmitted to the load are more stable. Illustratively, referring to fig. 4, the output capacitive element 331 may include output capacitive elements 331a, 331b, and 331c connected in parallel. It should be appreciated that the specific number of output capacitive elements 331 included in the output capacitive unit 330 is not particularly limited in the embodiments of the present application, and may be adjusted according to actual production and design requirements.

It will be appreciated that the output capacitive element 331 may be electrically connected to the inductive unit 330 in different ways. For example, in some embodiments, when the inductance unit 320 is disposed on the second substrate, the output capacitance element 331 may be disposed on a surface of the second substrate remote from the first substrate 311 by way of SMT and electrically connected to the second substrate, thereby being coupled to the inductance unit 330 through the second substrate. In other embodiments, the power module 300 may further include a third substrate (not shown). The third substrate is disposed opposite to the first substrate 311, and the output capacitor 331 may be disposed on the third substrate and electrically connected to the inductor unit 320 through a conductive structure.

The specific form of connection of the chip 312, the inductance unit 320 and the output capacitance unit 330 will be described in more detail with reference to the accompanying drawings, which are only briefly described.

The side of the output capacitor unit 330 remote from the inductor unit 320 may be electrically connected to the load in different ways to input the filtered output voltage to the load for supplying power to the load.

It can be appreciated that, in the power module 300 provided in this embodiment of the present application, by stacking the voltage conversion unit 310, the inductance unit 320, and the output capacitance unit 330 in sequence, one side of the output capacitance unit 330 away from the inductance unit 320 is electrically connected with the load, so that the power module 300 can supply power to the load in a vertical power supply manner. Compared with the fact that the chip 312, the inductance element 321 and the like are tiled on the first substrate 311, the power supply path for supplying power to the load by the power module 300 can be shortened, loss on the power supply path is reduced, power density of the power module 300 is improved, high current requirements of the load are met, and the problem that current supply cannot be performed due to the fact that impedance of the power supply path is large is solved, so that normal power supply of the power module 300 to the load can be guaranteed. In addition, by stacking the voltage conversion unit 310, the inductance unit 320 and the output capacitance unit 330 in sequence, the overall volume of the power module 300 can be reduced, which is beneficial to integration and miniaturization design.

The specific form of connection of the chip 312, the inductance unit 320 and the output capacitance unit 330 is further described below with reference to fig. 5 to 8.

Fig. 5 is a schematic structural diagram of a power module 300 according to an embodiment of the present application.

It should be understood that the power module 300 shown in fig. 5 includes most of the technical features of the power module 300 shown in fig. 4, and the differences between them will be mainly described below, and most of the same details will not be repeated.

Referring to fig. 5, the power module 300 may include a first substrate 311, a chip 312, an inductance unit 320, an output capacitance unit 330, a first dielectric layer 341, a first conductive structure 351, and a third substrate 360.

Wherein, the chip 312 may be soldered on the second surface 3112 of the first substrate 311. The inductance unit 320 may include at least one inductance element 321. The inductance element 321 is soldered on the first surface 3111 of the first substrate 311, and may be electrically connected to the chip 321 through a wiring layer of the first substrate 311. The first dielectric layer 341 may be disposed on the first surface 3111 of the first substrate 311, for encapsulating the inductance element 321.

Illustratively, the first dielectric layer 341 may be formed by molding the inductive element 321. The plastic package may use suitable techniques such as, but not limited to, transfer molding, compression molding, lamination, and the like. That is, by molding the inductance element 321, the first dielectric layer 341 may encapsulate the inductance element 321.

In some embodiments, the first dielectric layer 341 may include a thermosetting cross-linking resin, for example, an epoxy injection molding compound (epoxy molding compound, EMC).

The first conductive structure 351 may be disposed on the first surface 3111 of the first substrate 311 for electrical connection of the inductance element 321 and the output capacitance unit 330.

Illustratively, an end of the first conductive structure 351 near the first substrate 311 may be electrically connected to the inductance element 321, a surface of the first conductive structure 351 far from the first substrate 311 exposes the first dielectric layer 341, and a first connection layer 3511 is provided. The first conductive structure 351 may be solder-connected with the output capacitor unit 330 through the first connection layer 3511. The first connection layer 3511 may be, for example, a solder paste layer formed by a solder paste brushing process, or a metal layer formed by a surface metallization process. The first conductive structure 351 may be, for example, but not limited to, a copper pillar connector or a PCB connector, or the like.

It is to be understood that the specific number of the first conductive structures 351 is not particularly limited in the embodiments of the present application, and may be adjusted according to actual production and design requirements.

The third substrate 360 may be disposed opposite to the first substrate 311. The output capacitive unit 330 may include at least one output capacitive element 331. Wherein the output capacitive element 331 may be disposed on the third substrate 360.

In some embodiments, the output capacitive element 331 may be embedded within the third substrate 360 and electrically connected to the third substrate 360 through an ECP process. At this time, the third substrate 360 may be solder-connected with the first connection layer 3511 to be electrically connected with the inductance unit 320 through the first conductive structure 351, thereby electrically connecting the output capacitive element 331 with the inductance unit 320.

In other embodiments, the third substrate 360 may include a third surface 361 and a fourth surface 362, the third surface 361 being located on a side of the third substrate 360 near the first substrate 311, the fourth surface 362 being located on a side of the third substrate 360 remote from the first substrate 311. The output capacitive element 331 is disposed on the third surface 361 of the third substrate 360. For example, the output capacitive element 331 may be soldered on the third surface 361 of the third substrate 360 by SMT and electrically connected to the third substrate 360.

It will be appreciated that for convenience of description and understanding, the embodiment shown in fig. 5 is illustrated by taking an example in which the output capacitive element 331 is disposed on the third surface 361 of the third substrate 360.

In one possible example, when the output capacitive element 331 is disposed on the third surface 361 of the third substrate 360, the power module 300 may further include a third dielectric layer 343. The third dielectric layer 343 is disposed on the third surface 361 of the third substrate 360 for encapsulating the output capacitor 331. Illustratively, the third dielectric layer 343 may be formed by molding the output capacitive element 331. The third dielectric layer 343 may include a thermosetting crosslinked resin, such as EMC, similar to the first dielectric layer 341.

In one possible example, when the output capacitive element 331 is disposed on the third surface 361 of the third substrate 360, the power module may further include a third conductive structure 353. A third conductive structure 353 may be disposed on the third surface 361 of the third substrate 360 for electrical connection between the output capacitive element 331 and the inductive element 321.

Specifically, an end of the third conductive structure 353 near the third substrate 360 may be electrically connected to the output capacitive element 331 through the third substrate 360. The surface of the third conductive structure 353 away from the third substrate 360 may expose the third dielectric layer 343, and be provided with a third connection layer 3531. By solder-connecting the third connection layer 3531 to the first connection layer 3511, the third conductive structure 353 can be electrically connected to the first conductive structure 351, so that the output capacitor element 331 and the inductor element 321 can be electrically connected.

It will be appreciated that the specific number of third conductive structures 353 in the embodiments of the present application is not particularly limited and may be adjusted according to actual production and design requirements.

In some embodiments, the fourth surface 362 of the third substrate 360 may be provided with a plurality of connection pins 370 for electrically connecting with a load to input and output a voltage to the load.

In some embodiments, the first surface 3111 of the first substrate 311 may also be provided with fourth conductive structures 354, and the third surface 361 of the third substrate 360 may be provided with fifth conductive structures 355 for signal transmission between the first substrate 311 and the third substrate 360.

Specifically, the surface of the fourth conductive structure 354 away from the first substrate 311 exposes the first dielectric layer 341, and is provided with a fourth connection layer 3411. The surface of the fifth conductive structure 355 remote from the third substrate 360 exposes the third dielectric layer 343, and is provided with a fifth connection layer 3551. The fourth conductive structure 354 may be electrically connected to the fifth conductive structure 355 by soldering the fourth connection layer 3541 and the fifth connection layer 3551, so that the first substrate 311 and the third substrate 360 are electrically connected.

It will be appreciated that the specific number of fourth conductive structures 354 and fifth conductive structures 355 in the embodiments of the present application is not particularly limited and may be adjusted according to actual production and design requirements.

It is also understood that the relevant descriptions of the conductive structures and the connection layers in the embodiments of the present application may be referred to the first conductive structure 351 and the first connection layer 3511.

In some embodiments, the power module 300 may also include at least one first passive device 380. The first passive device 380 may be disposed on the first surface 3111 and/or the second surface 3112 of the first substrate 311 for output processing of an input voltage. The first passive device 380 may be, for example, but not limited to, an input capacitive element, a resistive element, a reactor, or the like. Illustratively, the first passive device 380 may be an input capacitive element soldered to the first surface 3111 of the first substrate 311 and located around the chip 312, for filtering the voltage converted by the chip 312 and delivering the filtered voltage to the inductance unit 320.

It should be appreciated that the specific number and configuration of the first passive devices 380 are not particularly limited in the embodiments of the present application, and may be adjusted according to actual production and design requirements.

In the above technical solution, the inductance element 321 is molded on the first substrate 311 through the first dielectric layer 341, so that the voltage conversion unit 310 and the inductance unit 320 are integrated on the first substrate 211 to form the first sub-module of the power module. The first sub-module may be electrically connected to the output capacitor unit 330 through a surface of the first conductive structure 351 exposed to the first dielectric layer 341, so that the output capacitor unit 330 is stacked and integrated with the voltage converting unit 310 and the inductance unit 320, thereby enabling the power module 300 to supply power to the load in a vertical power supply manner.

Fig. 6 is a schematic structural diagram of another power module 300 according to an embodiment of the present application.

It should be appreciated that the power module 300 shown in fig. 6 includes most of the technical features of the power module 300 shown in fig. 4. The differences between fig. 6 and fig. 4 are mainly described below, and most of the same will not be described again.

Referring to fig. 6, the power module 300 may include a first substrate 311, a chip 312, an inductance unit 320, an output capacitance unit 330, a second substrate 390, and a second dielectric layer 342.

Wherein, the chip 312 is soldered on the second surface 3112 of the first substrate 311. The second substrate 390 may be disposed opposite to the first substrate 311. The second substrate 390 may include a fifth surface 391 and a sixth surface 392, the fifth surface 391 being located on a side of the second substrate 390 proximate to the first substrate 311, the sixth surface 392 being located on a side of the second substrate 390 distal from the first substrate 311. The inductance unit 320 may include at least one inductance element 321. The inductance element 321 is disposed on the second substrate 390, and the fifth surface 391 of the second substrate 390 is electrically connected to the first surface 3111 of the first substrate 311, so that the inductance element 321 is coupled to the chip 321 through the first substrate 311 and the second substrate 390. For example, the fifth surface 391 of the second substrate 390 and the first surface 3111 of the first substrate 311 may be solder-connected.

In some embodiments, the inductive element 321 may be embedded within the second substrate 390 and electrically connected to the second substrate 390 by an ECP process. In other embodiments, the inductive element 321 may be disposed on the sixth surface 392 of the second substrate 390. For example, the inductance element 321 may be soldered on the sixth surface 392 of the second substrate 390 by SMT and electrically connected to the second substrate 390.

It is to be understood that, for convenience of description and understanding, the embodiment shown in fig. 6 is illustrated by taking an example that the inductance element 321 is embedded in the second substrate 390.

The output capacitance unit 330 includes at least one output capacitance element 331. The output capacitor 331 is soldered on the sixth surface 392 of the second substrate 390, and is coupled to the inductor unit 320 through the second substrate 390. The second dielectric layer 342 is disposed on the sixth surface 3120 of the second substrate 390 for encapsulating the output capacitive element 331. Illustratively, the second dielectric 342 may be formed by plastic encapsulation of the output capacitive element 331.

In some embodiments, the power module 300 may also include a second conductive structure 352. The second conductive structure 352 is disposed on the sixth surface 392 of the second substrate 390, and a surface of the second conductive structure 352 remote from the second substrate 390 exposes the second dielectric layer 342. Thus, the power module 300 may be electrically connected to the load through the second conductive structure 352. For example, a surface of the second conductive structure 352 remote from the second substrate 390 may be provided with a second connection layer 3521, and the second conductive structure 352 may be soldered to a load through the second connection layer 352 to input and output a voltage to the load.

In the above technical solution, the output capacitor 331 is encapsulated on the second substrate 390 through the second dielectric layer 342, so that the inductance unit 320 and the output capacitor 330 are integrated on the second substrate 390 to form the second sub-module of the power module 300, and the voltage conversion unit 310, the inductance unit 320 and the output capacitor 330 are stacked and integrated together through electrically connecting the second sub-module with the first substrate 311, so that the power module 300 can supply power to the load in a vertical power supply manner.

Fig. 7 is a schematic structural diagram of yet another power module 300 according to an embodiment of the present application.

It should be appreciated that the power module 300 shown in fig. 7 includes most of the technical features of the power module 300 shown in fig. 4. The differences between fig. 7 and fig. 4 are mainly described below, and most of the same will not be described again.

Referring to fig. 7, the power module 300 may include a first substrate 311, a chip 312, an inductance unit 320, an output capacitance unit 330, a second substrate 390, a third substrate 360, a third dielectric layer 343, and a third conductive structure 353.

Wherein, the chip 312 is soldered on the second surface 3112 of the first substrate 311. The inductance unit 320 may include at least one inductance element 321. The inductance element 321 may be embedded in the second substrate 390 and electrically connected to the second substrate 390 through an ECP process. The fifth surface 391 of the second substrate 390 is electrically connected to the first surface 3111 of the first substrate 311. For example, the fifth surface 391 of the second substrate 390 and the first surface 3111 of the first substrate 311 may be solder-connected.

The output capacitive unit 330 may include at least one output capacitive element 331. The output capacitive element 331 may be disposed on the third surface 361 of the third substrate 360. For example, the output capacitive element 331 may be soldered on the third surface 361 of the third substrate 360 by SMT and electrically connected to the third substrate 360. The third dielectric layer 343 is disposed on the third surface 361 of the third substrate 360 for encapsulating the output capacitor 331. The third conductive structure 353 may be disposed on the third surface 361 of the third substrate 360, and a surface of the third conductive structure 353 remote from the third substrate 360 exposes the third dielectric layer 343 for electrical connection between the output capacitive element 331 and the inductive element 321.

For example, a surface of the third conductive structure 353 remote from the third substrate 360 may be provided with a third connection layer 3531, and the output capacitive element 331 may be electrically connected to the inductance element 321 by soldering the third connection layer 3531 on the second substrate 390.

In some embodiments, a fifth conductive structure 355 may also be disposed on the third surface 361 of the third substrate 360 for signal transmission between the third substrate 360 and the second substrate 390.

Specifically, the surface of the fifth conductive structure 355 remote from the third substrate 360 exposes the third dielectric layer 343, and a fifth connection layer 3551 is provided. The third substrate 360 may be solder-connected with the second substrate 390 through the fifth connection layer 3551.

In the above technical solution, the chip 312, the inductance element 321 and the output capacitance element 331 are respectively integrated on the first substrate 311, the second substrate 390 and the third substrate 360, and the voltage conversion unit 310, the inductance unit 320 and the output capacitance unit 330 are stacked and integrated together by electrically connecting the three substrates, so that the power module 300 can supply power to the load in a vertical power supply manner.

Fig. 8 is a schematic structural diagram of yet another power module 300 according to an embodiment of the present application.

Referring to fig. 8, the power module 300 may include a plurality of voltage converting units 310, a plurality of inductance units 320, and an output capacitance unit 330. The plurality of voltage converting units 310 are disposed corresponding to the plurality of inductance units 320. That is, the plurality of voltage converting units 310 and the plurality of inductance units 320 may be in one-to-one correspondence and electrically connected. And the plurality of inductance units 320 are electrically connected with the output capacitance unit 330.

Illustratively, referring to fig. 8, the plurality of voltage converting units 310 may include voltage converting units 310a and 310b, and the plurality of inductance units 320 may include inductance units 320a and 320b. The voltage conversion units 310a and 310b are electrically connected to the inductance units 320a and 320b, respectively, and the inductance units 320a and 320b are electrically connected to the output capacitance unit 330.

It will be appreciated that the description of the specific connection of the voltage converting unit 310a and the inductance unit 320a, and the voltage converting unit 310b and the inductance unit 320b may refer to the embodiments shown in fig. 5 to 7.

For example, in one possible example, the connection form of the voltage conversion unit 310a and the inductance unit 320a may be similar to the embodiment shown in fig. 5. That is, the inductance element 321 in the inductance unit 320a may be molded on the first substrate 311, so that the voltage conversion unit 310a and the inductance unit 320a are stacked and integrated together to form the first sub-module. The connection form of the voltage converting unit 310b and the inductance unit 320b may be similar to the embodiments shown in fig. 6 and 7. That is, the chip 312 may be disposed on the first substrate 311, the inductance element 321 in the inductance unit 320b may be disposed on the second substrate 390, and the voltage conversion unit 310b and the inductance unit 320b may be stacked and integrated by electrically connecting the first substrate 311 and the second substrate 390.

It should be noted that, in the power module 300, the specific connection forms of the plurality of voltage converting units 310 and the plurality of inductance units 320 may be the same or different, and may be adjusted according to actual production and design requirements, which is not limited in this application. For example, in another possible example, the connection forms of the voltage conversion unit 310a and the inductance unit 320a, and the connection forms of the voltage conversion unit 310b and the inductance unit 320b may be similar to the embodiment shown in fig. 5, or may be similar to the embodiments shown in fig. 6 and 7.

It will be appreciated that the description of the specific connection of the inductive units 320a and 320b to the output capacitive unit 330 may be found in the embodiments shown in fig. 5 and 7.

For example, referring to fig. 8, in one possible example, the output capacitance unit 330 may include a plurality of output capacitance elements 331, and the plurality of output capacitance elements 331 may be embedded within the third substrate 360 and electrically connected to the third substrate 360 through an ECP process. The third surface 361 of the third substrate 360 may be electrically connected with the inductance units 320a and 320b, and the fourth surface 362 of the third substrate 360 may be provided with a plurality of connection pins 370 for electrically connecting with a load to input and output a voltage to the load.

In the above technical solution, according to actual production and design requirements, the capacitor output unit 330 may be integrated with the plurality of voltage conversion units 310 and the plurality of inductance units 320, which may increase the current provided by the power module 300, and is beneficial to meeting the requirement of larger current of the load. For example, the power module 300 may be provided in a multi-unit structure including a plurality of voltage converting units 310 and a plurality of inductance units 320 having a size of 25mm×25mm, or 50mm×50 mm.

Having described the structure of the power module 300 according to the embodiment of the present application, the following is an exemplary description of the manufacturing process of the power module 300 according to the embodiment of the present application with reference to the accompanying drawings.

Fig. 9 to 16 are schematic diagrams illustrating a method for manufacturing a power module 300 according to an embodiment of the present application.

S401, the voltage conversion unit 310 prepares.

Referring to fig. 9, a die 312 is soldered on the second surface 3112 of the first substrate 311 and electrically connected to the first substrate 311 by a flip-chip process to obtain a voltage converting unit 310.

In some embodiments, at least one first passive device 380 may also be soldered on the second surface 3112 of the first substrate 311, and the at least one first passive device 380 is located around the die 312.

S402, the inductor unit 320 and the first conductive structure 351 are mounted.

Referring to fig. 10, at least one inductance element 321 and a first conductive structure 351 in the inductance unit 320 are attached and fixed on a first surface 3111 of the first substrate 311 by soldering. The first conductive structure 351 may be, for example, a copper pillar connector, or a PCB connector.

In some embodiments, the fourth conductive structures 354 may also be soldered on the first surface 3111 of the first substrate 311.

S403, plastic packaging is carried out.

Referring to fig. 11, a first dielectric layer 341 is formed by performing plastic encapsulation on a first surface 3111 of the first substrate 311.

Plastic packaging, which may also be referred to as encapsulation (molding). The plastic encapsulation may be accomplished using, for example, transfer molding, compression molding, lamination, and the like.

The first dielectric layer 341 may include a thermosetting cross-linking resin (e.g., epoxy), but other materials may also be used as the first dielectric layer 341 in the packaging of the power module 300.

After the plastic packaging, the inductance element 321, the first conductive structure 351 and the like are all located in the first dielectric layer 341, so that the first conductive structure 351 cannot form an electrical connection with other electronic elements.

S404, processing the surface of the first conductive structure 351.

Referring to fig. 12, the first dielectric layer 341 coated on the surface of the first conductive structure 351 far from the first substrate 311 is removed by a polishing process, so that the surface of the first conductive structure 351 far from the first substrate 311 exposes the first dielectric layer 341. That is, the connector terminal of the first conductive structure 351 is exposed to the first dielectric layer 341.

Then, a first connection layer 3511 is formed on the surface of the first conductive structure 351 away from the first substrate 311 by a process such as brushing solder paste or surface metallization.

In some embodiments, the first dielectric layer 341 coated on the surface of the fourth conductive structure 354 far from the first substrate 311 may be removed by a polishing process, so that the surface of the fourth conductive structure 354 far from the first substrate 311 exposes the first dielectric layer 341, and the fourth connection layer 3541 is formed on the surface of the fourth conductive structure 354 far from the first substrate 311 by a solder paste brushing process, a surface metallization process, or the like.

S405, the output capacitor unit 330 and the third conductive structure 353 are mounted.

Referring to fig. 13, at least one output capacitor 331 of the output capacitor 330 and the third conductive structure 353 are attached and fixed on the third surface 361 of the third substrate 360 by soldering.

In some embodiments, fifth conductive structures 355 may also be soldered on third surface 361 of third substrate 360.

S406, plastic packaging is carried out.

Referring to fig. 14, a third dielectric layer 343 is formed by molding on a third surface 361 of the third substrate 360.

The third dielectric layer 343 may include a thermosetting cross-linking resin (e.g., epoxy), but other materials may also be used as the third dielectric layer 343 in the package of the power module 300.

After the plastic packaging, the output capacitor element 331, the third conductive structure 353, and the like are all located in the third dielectric layer 343, such that the third conductive structure 353 cannot form an electrical connection with other electronic elements.

S407, processing the surface of the third conductive structure 353.

Referring to fig. 15, the third dielectric layer 343 wrapping the surface of the third conductive structure 353 far from the third substrate 360 is removed by a polishing (grind) process or the like, so that the surface of the third conductive structure 353 far from the third substrate 360 exposes the third dielectric layer 343. That is, the connector terminal of the third conductive structure 353 is exposed to the third dielectric layer 343.

Then, a third connection layer 3531 is formed on the surface of the third conductive structure 353, which is far from the third substrate 360, through a process of brushing solder paste, surface metallization, or the like.

In some embodiments, the third dielectric layer 343 wrapping the surface of the fifth conductive structure 355 far from the third substrate 360 may be removed by a polishing process or the like, so that the surface of the third conductive structure 353 far from the third substrate 360 exposes the third dielectric layer 343, and the fifth connection layer 3551 is formed on the surface of the fifth conductive structure 355 far from the third substrate 360 by a solder paste brushing process or a surface metallization process or the like.

And S408, interconnecting the first conductive structure 351 and the third conductive structure 353.

Referring to fig. 16, the first connection layer 3511 and the third connection layer 3531 are fixedly connected in a soldering manner to interconnect the first conductive structure 351 and the third conductive structure 353, thereby realizing the interconnection of the voltage converting unit 310, the inductance unit 320, and the output capacitance unit 330.

In some embodiments, the fourth connection layer 3541 and the fifth connection layer 3551 may also be fixedly connected in a soldering manner to interconnect the fourth conductive structure 354 and the fifth conductive structure 355, thereby performing signal transmission between the first substrate 311 and the third substrate 360.

Fig. 17 to 21 are schematic diagrams illustrating a method for manufacturing another power module 300 according to an embodiment of the present application.

S501, the inductance unit 320 is embedded.

Referring to fig. 17, at least one inductance element 321 in the inductance unit 320 is embedded in the second substrate 390 and electrically connected to the second substrate 390 through an ECP process or the like.

S502, the output capacitor unit 330 and the second conductive structure 352 are mounted.

Referring to fig. 18, at least one output capacitor 331 of the output capacitor 330 and the second conductive structure 352 are attached and fixed on the sixth surface 392 of the second substrate 390 by soldering through SMT. The second conductive structure 390 may be, for example, a copper pillar connector, or a PCB connector.

S503, performing plastic packaging.

Referring to fig. 19, the second dielectric layer 342 is formed by molding on the sixth surface 392 of the second substrate 390. The second dielectric layer 342 may include a thermosetting cross-linking resin (e.g., epoxy), but other materials may also be used as the second dielectric layer 342 in the packaging of the power module 300.

After the plastic packaging, the output capacitor element 331 and the second conductive structure 352 are both located in the second dielectric layer 342, such that the second conductive structure 352 cannot form an electrical connection with other electronic components.

And S504, processing the surface of the second conductive structure 352.

Referring to fig. 20, the second dielectric layer 342 coated on the surface of the second conductive structure 352 away from the second substrate 390 is removed by a polishing (grind) process, so that the surface of the second conductive structure 352 away from the second substrate 390 exposes the second dielectric layer 342. That is, the connector terminals of the second conductive structures 352 are exposed to the second dielectric layer 342.

Then, a second connection layer 3521 is formed on the surface of the second conductive structure 352 away from the second substrate 390 by a process such as brushing solder paste or surface metallization. The second connection layer 3521 may be used to electrically connect with a load to input and output a voltage to the load.

S505, the second substrate 390 is interconnected with the voltage conversion unit 310.

Referring to fig. 21, a die 312 is soldered on the second surface 3112 of the first substrate 311 and electrically connected to the first substrate 311 by a flip-chip process to obtain a voltage converting unit 310.

Thereafter, the first surface 3111 of the first substrate 310 is fixed on the fifth surface 391 of the second substrate 390 by soldering to realize interconnection of the voltage converting unit 310, the inductance unit 320 and the output capacitance unit 330.

It is to be understood that the above-mentioned manufacturing process of the power module 300 is only illustrative, and the specific manufacturing process of the power module 300 is not particularly limited in this application, as long as the manufacturing process can achieve the structure of protecting the power module 300 in the above-mentioned embodiment.

The embodiment of the present application further provides an electronic device, as shown in fig. 1, for example, the electronic device may include a housing, and a circuit board, a load and the above-described power module 300 that are accommodated in the housing. Wherein the power module 300 is disposed on the circuit board. The circuit board may be, for example, a motherboard of an electronic device. The power module 300 is electrically connected to a load for inputting and outputting a voltage to the load. The specific description may refer to fig. 1, and will not be described herein.

The foregoing is merely specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the present application, and the changes and substitutions are intended to be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (16)

1. A power module, comprising:

the voltage conversion unit comprises a first substrate and a chip, wherein the chip is arranged on the first substrate and is used for performing voltage conversion on input voltage;

the inductance unit is arranged on the first surface of the first substrate and comprises at least one inductance element, and the at least one inductance element is electrically connected with the chip;

The output capacitor unit is arranged on one side, far away from the first substrate, of the inductance unit and comprises at least one output capacitor element, and the at least one output capacitor element is electrically connected with the inductance unit;

the inductance unit and the output capacitance unit are used for carrying out output processing on the conversion voltage to obtain output voltage, and one side, far away from the inductance unit, of the output capacitance unit is electrically connected with a load so as to input the output voltage to the load.

2. The power module of claim 1, further comprising a first dielectric layer and a first conductive structure;

the at least one inductance element is welded on the first surface, and the first dielectric layer is arranged on the first surface and used for encapsulating the at least one inductance element;

the first conductive structure is disposed on the first surface and is used for electrically connecting the at least one inductance element and the output capacitor unit.

3. The power module of claim 1, further comprising a second substrate,

the second substrate is arranged opposite to the first substrate, and the surface of the second substrate facing the first substrate is electrically connected with the first surface;

The at least one inductive element is disposed on the second substrate.

4. The power module of claim 3, further comprising a second dielectric layer,

the at least one output capacitive element is welded on the surface, far away from the first substrate, of the second substrate, and the second dielectric layer is arranged on the surface, far away from the first substrate, of the second substrate and is used for encapsulating the at least one output capacitive element.

5. The power module of claim 4, further comprising a second conductive structure,

the second conductive structure is disposed on a surface of the second substrate remote from the first substrate for electrical connection between the at least one output capacitive element and the load.

6. The power module of claim 2 or 3, further comprising a third substrate disposed opposite the first substrate,

the at least one output capacitive element is disposed on the third substrate.

7. The power module of claim 6, further comprising a plurality of connection pins disposed on a surface of the third substrate remote from the first substrate for connecting the load.

8. The power module according to any one of claims 1 to 7, wherein the power module includes a plurality of the voltage converting units and a plurality of the inductance units,

the voltage conversion units are correspondingly arranged with the inductance units, and the inductance units are electrically connected with the output capacitance units.

9. An electronic device, comprising: the casing, and accept in circuit board, power module and the load in the casing, power module sets up on the circuit board, wherein, power module includes:

the voltage conversion unit comprises a first substrate and a chip, wherein the chip is arranged on the first substrate and is used for performing voltage conversion on input voltage;

the inductance unit is arranged on the first surface of the first substrate and comprises at least one inductance element, and the at least one inductance element is electrically connected with the chip;

the output capacitor unit is arranged on one side, far away from the first substrate, of the inductance unit and comprises at least one output capacitor element, and the at least one output capacitor element is electrically connected with the inductance unit;

The inductance unit and the output capacitance unit are used for carrying out output processing on the converted voltage to obtain output voltage, and one side, far away from the inductance unit, of the output capacitance unit is electrically connected with the load so as to input the output voltage to the load.

10. The electronic device of claim 9, wherein the power module further comprises a first dielectric layer and a first conductive structure;

the at least one inductance element is welded on the first surface, and the first dielectric layer is arranged on the first surface and used for encapsulating the at least one inductance element;

the first conductive structure is disposed on the first surface and is used for electrically connecting the at least one inductance element and the output capacitor unit.

11. The electronic device of claim 9, wherein the power module further comprises a second substrate,

the second substrate is arranged opposite to the first substrate, the surface of the second substrate facing the first substrate is electrically connected with the first surface,

the at least one inductive element is disposed on the second substrate.

12. The electronic device of claim 11, wherein the power module further comprises a second dielectric layer,

The at least one output capacitive element is welded on the surface, far away from the first substrate, of the second substrate, and the second dielectric layer is arranged on the surface, far away from the first substrate, of the second substrate and is used for encapsulating the at least one output capacitive element.

13. The electronic device of claim 12, wherein the power module further comprises a second conductive structure,

the second conductive structure is disposed on a surface of the second substrate remote from the first substrate for electrical connection between the at least one output capacitive element and the load.

14. The electronic device of claim 10 or 11, wherein the power module further comprises a third substrate disposed opposite the first substrate,

the at least one output capacitive element is disposed on the third substrate.

15. The electronic device of claim 14, wherein the power module further comprises a plurality of connection pins disposed on a surface of the third substrate remote from the first substrate for connecting the load.

16. The electronic device according to any one of claims 9 to 15, wherein the power supply module includes a plurality of the voltage converting units and a plurality of the inductance units,

The voltage conversion units are correspondingly arranged with the inductance units, and the inductance units are electrically connected with the output capacitance units.

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