CN116435440A - Fluorescent film, LED packaging structure, LED light source and packaging method - Google Patents
Fluorescent film, LED packaging structure, LED light source and packaging method Download PDFInfo
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- CN116435440A CN116435440A CN202310643067.6A CN202310643067A CN116435440A CN 116435440 A CN116435440 A CN 116435440A CN 202310643067 A CN202310643067 A CN 202310643067A CN 116435440 A CN116435440 A CN 116435440A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000843 powder Substances 0.000 claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 239000003085 diluting agent Substances 0.000 claims abstract description 52
- 239000002002 slurry Substances 0.000 claims abstract description 33
- 238000010438 heat treatment Methods 0.000 claims abstract description 31
- 239000002994 raw material Substances 0.000 claims abstract description 17
- 239000000126 substance Substances 0.000 claims abstract description 17
- 238000002156 mixing Methods 0.000 claims abstract description 11
- 239000000565 sealant Substances 0.000 claims description 54
- 239000003292 glue Substances 0.000 claims description 45
- 238000004062 sedimentation Methods 0.000 claims description 27
- 239000003795 chemical substances by application Substances 0.000 claims description 25
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 14
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000049 pigment Substances 0.000 claims description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 3
- 150000004645 aluminates Chemical class 0.000 claims description 3
- GTDCAOYDHVNFCP-UHFFFAOYSA-N chloro(trihydroxy)silane Chemical compound O[Si](O)(O)Cl GTDCAOYDHVNFCP-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- MEFBJEMVZONFCJ-UHFFFAOYSA-N molybdate Chemical compound [O-][Mo]([O-])(=O)=O MEFBJEMVZONFCJ-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 claims description 3
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 150000002894 organic compounds Chemical group 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 2
- 239000010452 phosphate Substances 0.000 claims description 2
- 238000004513 sizing Methods 0.000 claims 1
- 238000007789 sealing Methods 0.000 abstract description 9
- 239000010410 layer Substances 0.000 abstract 2
- 239000012945 sealing adhesive Substances 0.000 abstract 2
- 238000002360 preparation method Methods 0.000 description 53
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000004907 flux Effects 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000000741 silica gel Substances 0.000 description 5
- 229910002027 silica gel Inorganic materials 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000499 gel Substances 0.000 description 4
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910021485 fumed silica Inorganic materials 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical group CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- 229910016066 BaSi Inorganic materials 0.000 description 1
- 229910004074 SiF6 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 235000019445 benzyl alcohol Nutrition 0.000 description 1
- ITVPBBDAZKBMRP-UHFFFAOYSA-N chloro-dioxido-oxo-$l^{5}-phosphane;hydron Chemical group OP(O)(Cl)=O ITVPBBDAZKBMRP-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical group O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The application discloses a fluorescent film, an LED packaging structure, an LED light source and a packaging method, wherein the fluorescent film comprises 5-90% of diluent by mass, the diluent is not easy to volatilize at normal temperature, and the diluent can be volatilized rapidly when the temperature exceeds 30 ℃. The LED packaging structure comprises a fluorescent film and a sealing adhesive layer, wherein the fluorescent film is used for covering an LED chip or is used for covering the LED chip and a substrate, and the sealing adhesive layer is arranged on the fluorescent film. The packaging method comprises the following steps: s1, mixing raw materials of a fluorescent film to prepare fluorescent slurry; s2, packaging the fluorescent paste on the LED chip and the substrate; s3, carrying out heating treatment on the LED chip and the substrate which are packaged with the fluorescent slurry, volatilizing the diluent in the fluorescent slurry, and solidifying the rest substances into a fluorescent film. The fluorescent film and sealing two-step process is adopted, so that the problem that the fluorescent powder is easy to be unevenly distributed after being packaged is solved.
Description
Technical Field
The application relates to the technical field of LEDs, in particular to a fluorescent film, an LED packaging structure, an LED light source and a packaging method.
Background
LEDs are a common semiconductor device that converts electrical energy into visible light, and are now widely used in a variety of lighting applications. The conventional manufacturing process of the LED light source comprises the following steps: s1, fixing a chip on a substrate and forming electric connection, S2, uniformly mixing fluorescent powder and silica gel according to a proportion, preparing fluorescent gel, then packaging the fluorescent gel on the chip and the substrate, naturally settling the fluorescent powder under the action of gravity, thereby covering the chip, and S3, solidifying the product packaged with the fluorescent gel at a high temperature.
In step S2, the fluorescent powder naturally settles under the action of gravity for at least two hours, and the required time is long, which not only results in long time of the whole process, but also is extremely easy to generate incomplete settlement of the fluorescent powder, thereby leading to uneven distribution of the fluorescent powder on the chip and the substrate and further affecting the consistency of optics after the LED package.
Disclosure of Invention
In order to solve at least one technical problem, an LED packaging process which is uniform in fluorescent powder distribution, short in process period and convenient to operate is developed.
On one hand, the raw materials of the fluorescent film comprise 5-90% of diluent by mass, wherein the diluent is not easy to volatilize at normal temperature and can volatilize rapidly when the temperature exceeds 30 ℃;
and when the LED chip and the substrate coated with the fluorescent slurry are subjected to heat treatment, the diluent in the fluorescent slurry can volatilize, and the rest substances are solidified into the fluorescent film.
Through adopting above-mentioned technical scheme, this application at first coats the fluorescent slurry that contains the diluent on LED chip and base plate, the diluent is difficult for volatilizing at normal atmospheric temperature 25 ℃, when the temperature exceeds 30 ℃, can volatilize fast, granular phosphor powder subsides, cover on LED chip and base plate more evenly, the diluent volatilizes the back, the solidification of surplus material becomes the fluorescent film of thickness 0.05 ~ 0.2mm, afterwards, carry out sealing treatment, thereby optical uniformity after the LED encapsulation has been guaranteed, this application has abandoned the natural sedimentation technology of conventional once encapsulation shaping, and adopt fluorescent film + sealed two-step technology, the duration of whole preparation technology is less than an hour, not only shortened preparation technology's cycle, still improved the inhomogeneous problem of distribution easily appears in phosphor powder after the encapsulation, thereby optical uniformity after the LED encapsulation has been improved.
Optionally, the diluent is an organic compound such as alkane, ether, alcohol, benzene and the like.
Optionally, the raw materials of the fluorescent film further comprise 10-95% of fluorescent glue by mass percent.
Through adopting above-mentioned technical scheme, this application mixes diluent and fluorescent glue and forms fluorescent slurry, and at normal atmospheric temperature, fluorescent slurry has suitable viscosity, and the phosphor powder is comparatively evenly distributed in the fluorescent slurry system, and after the heating, the diluent volatilizes fast, and granular phosphor powder sinks, more evenly adheres to on LED chip and base plate, and after the diluent volatilizes, the remaining material solidification becomes the fluorescent film, and the phosphor powder in the fluorescent film covers on LED chip and base plate more evenly.
Optionally, the fluorescent glue comprises a glue stock, a first fluorescent powder and a first anti-sedimentation agent.
Optionally, the glue stock is a first AB glue.
Optionally, the first fluorescent powder is at least one fluorescent powder selected from silicate fluorescent powder, chlorosilicate fluorescent powder, aluminate fluorescent powder, phosphate fluorescent powder, oxynitride fluorescent powder, nitride fluorescent powder, tungstate fluorescent powder, molybdate fluorescent powder, fluoride fluorescent powder, silicon aluminum nitride fluorescent powder and the like.
Optionally, the first anti-sedimentation agent is a compound or simple substance with anti-sedimentation effect.
Optionally, the first anti-settling agent is an oxide of silicon or an oxide of titanium.
In a second aspect, the application provides an LED package structure, including a fluorescent film and a sealant layer, where the fluorescent film is used to cover an LED chip or is used to cover an LED chip and a substrate, and the sealant layer is disposed on the fluorescent film.
By adopting the technical scheme, the consistency of optics after the LED is packaged is ensured, and the sealing performance of the LED chip is also ensured.
Optionally, the raw material of the sealant layer is second AB glue, or a mixture formed by at least one component of diffusion powder, second fluorescent powder, second anti-sedimentation agent and pigment and the second AB glue.
In a third aspect, the present application provides a packaging method of an LED package structure, including the steps of:
s1, mixing the raw materials of the fluorescent film to prepare fluorescent slurry;
s2, packaging the fluorescent paste on an LED chip and a substrate;
s3, carrying out heating treatment on the LED chip and the substrate which are packaged with the fluorescent slurry, volatilizing the diluent in the fluorescent slurry, and solidifying the rest substances into the fluorescent film.
By adopting the technical scheme, when the fluorescent slurry is heated, bubbles in the fluorescent slurry can be removed, the diluent can be volatilized, granular fluorescent powder is sunk and uniformly attached to the LED chip and the substrate, after the diluent is volatilized, the residual substances are solidified into a fluorescent film, and the fluorescent powder in the fluorescent film is uniformly covered on the LED chip and the substrate.
Optionally, the method further comprises step S4: and mixing the raw materials of the sealant layer to prepare the sealant, packaging the sealant on the fluorescent film, and then performing heating treatment to cure the sealant into the sealant layer.
By adopting the technical scheme, the sealing performance of the LED chip package can be ensured.
Optionally, in the step S4, the heating temperature of the heating treatment is 60-250 ℃.
Optionally, in the step S3, the heating temperature of the heating treatment is 30-250 ℃.
In a fourth aspect, the present application provides an LED light source, which is manufactured by the above packaging method.
In summary, the present invention includes at least one of the following beneficial technical effects:
1. the method discards the conventional natural sedimentation process of one-step packaging molding, adopts the fluorescent film and sealing two-step process, shortens the period of the preparation process, and improves the problem that the fluorescent powder is easy to be unevenly distributed after packaging, thereby ensuring the yield and luminous flux of the packaged LED.
2. According to the application, the fluorescent slurry is coated on the LED chip and the substrate, the diluent is not easy to volatilize at the normal temperature of 25 ℃, when the temperature exceeds 30 ℃, the diluent can volatilize rapidly, the granular fluorescent powder sinks, so that the fluorescent powder is uniformly coated on the LED chip and the substrate, and after the diluent volatilizes, the residual substances are solidified into a fluorescent film.
3. According to the application, the thinner and the fluorescent glue are mixed to form the fluorescent paste, the fluorescent paste has proper viscosity at normal temperature, the fluorescent powder in a fluorescent paste system is uniformly distributed, after heating, the thinner is quickly volatilized, and the granular fluorescent powder is sunk and uniformly attached to the LED chip and the substrate.
Drawings
Fig. 1 is a schematic structural diagram of dispensing fluorescent paste on a chip and a substrate by dispensing;
FIG. 2 is a schematic diagram of a structure of a fluorescent paste cured into a fluorescent film according to the present application;
FIG. 3 is a schematic diagram of a sealant layer provided in the present application covering a fluorescent film;
reference numerals illustrate: 1. a substrate; 2. a positive and negative electrode demarcation material; 3. a cofferdam; 4. a chip; 41. a bonding wire; 5. fluorescent slurry; 51. a first phosphor; 52. a fluorescent film; 6. and (5) a sealant layer.
Description of the embodiments
The present application is described in further detail below with reference to the drawings and examples.
The application designs a fluorescent film, wherein the raw materials of the fluorescent film comprise 5-90% of diluent by mass, the diluent is not easy to volatilize at normal temperature, and the diluent can be volatilized rapidly when the temperature exceeds 30 ℃;
and when the LED chip and the substrate coated with the fluorescent slurry are subjected to heat treatment, the diluent in the fluorescent slurry can volatilize, and the rest substances are solidified into the fluorescent film.
The application also designs an LED packaging structure, which comprises the fluorescent film and a sealant layer, wherein the fluorescent film is used for covering an LED chip or is used for covering the LED chip and a substrate, and the sealant layer is arranged on the fluorescent film.
The packaging method of the LED packaging structure comprises the following steps:
s1, mixing the raw materials of the fluorescent film to prepare fluorescent slurry;
s2, packaging the fluorescent paste on an LED chip and a substrate;
s3, carrying out heating treatment on the LED chip and the substrate which are packaged with the fluorescent slurry, volatilizing the diluent in the fluorescent slurry, and solidifying the rest substances into the fluorescent film.
The LED packaging structure can be applied to the field of LED light sources.
The method discards the conventional natural sedimentation process of one-step packaging molding, adopts the fluorescent film and sealing two-step process, shortens the period of the preparation process, and improves the problem that the fluorescent powder is easy to be unevenly distributed after packaging, thereby ensuring the yield and luminous flux of the packaged LED. According to the application, the fluorescent slurry is coated on the LED chip and the substrate, the diluent is not easy to volatilize at the normal temperature of 25 ℃, when the temperature exceeds 30 ℃, the diluent can volatilize rapidly, the granular fluorescent powder sinks, so that the fluorescent powder is uniformly coated on the LED chip and the substrate, and after the diluent volatilizes, the residual substances are solidified into a fluorescent film.
Preparation examples 1 to 14 are preparation of fluorescent paste
Preparation example 1
5.48g of fluorescent glue and 4.52g of diluent are put into a stirrer, and stirred for 1 minute at a stirring rate of 500 revolutions per minute under the conditions of normal temperature and normal pressure to prepare fluorescent slurry for later use.
Wherein, the conditions of normal temperature and normal pressure refer to the temperature of 25 ℃ and the pressure of 101kPa.
The fluorescent glue comprises the following raw materials of a first AB glue, a first fluorescent powder and a first anti-sedimentation agent, wherein the weight ratio of the first AB glue to the first fluorescent powder to the first anti-sedimentation agent is 20:13:2.85.
the first AB glue comprises the following components in percentage by mass: 1, mixing to obtain the product; the first fluorescent powder is silicate ((Sr, ba, ca, mg) 2SiO4:Eu 2+ ) Fluorescent powder; the first anti-sedimentation agent is fumed silica with the average particle size of 30 nm; the diluent was dichloroethane, which had a purity of 99%.
Preparation example 2
6.31g of fluorescent glue and 3.69g of diluent are put into a stirrer, and stirred for 1.5 minutes at the stirring rate of 450 revolutions per minute under the condition of normal temperature and normal pressure to prepare fluorescent slurry for later use.
The fluorescent glue comprises the following raw materials of a first AB glue, a first fluorescent powder and a first anti-sedimentation agent, wherein the weight ratio of the first AB glue to the first fluorescent powder to the first anti-sedimentation agent is 21.5:19.6:2.91.
the first AB glue is the same as in preparation example 1, the first fluorescent powder is aluminate (CY 3 (Al, ga5O12: ce) fluorescent powder, the first anti-sedimentation agent is fumed silica with an average particle size of 35nm, the diluent is diethylene glycol butyl ether, and the purity of the diethylene glycol butyl ether is 99%.
Preparation example 3
7.5g of fluorescent glue and 2.5g of diluent are put into a stirrer, and stirred for 2 minutes at a stirring rate of 400 revolutions per minute under the conditions of normal temperature and normal pressure to prepare fluorescent slurry for later use.
The fluorescent glue comprises the following raw materials of a first AB glue, a first fluorescent powder and a first anti-sedimentation agent, wherein the weight ratio of the first AB glue to the first fluorescent powder to the first anti-sedimentation agent is 24.3:23:2.3.
first AB glue same as preparation example 1, the first fluorescent powder is chlorosilicate (Ca 2SiO3Cl2: eu) 2+ ，Mn 2+ ) The fluorescent powder, the first anti-sedimentation agent is titanium dioxide with the average particle size of 50nm, the diluent is ethanol, and the purity of the ethanol is 95%.
Preparation example 4
9.5g of fluorescent glue and 5g of diluent are put into a stirrer, and stirred for 1 minute at a stirring rate of 500 revolutions per minute under the conditions of normal temperature and normal pressure, so as to prepare fluorescent slurry for later use.
The fluorescent glue comprises the following raw materials of a first AB glue, a first fluorescent powder and a first anti-sedimentation agent, wherein the weight ratio of the first AB glue to the first fluorescent powder to the first anti-sedimentation agent is 31:10:3.
the first AB glue is the same as preparation example 1, the first fluorescent powder is nitride (CaAlSiN 3: eu) fluorescent powder, the first anti-sedimentation agent is nano silicon powder with the average particle size of 50nm, the diluent is benzyl alcohol, and the purity of the benzyl alcohol is 99.9%.
Preparation example 5
8.75g of fluorescent glue and 1.25g of diluent are put into a stirrer, and stirred for 1.5 minutes at the stirring rate of 480 revolutions per minute under the condition of normal temperature and normal pressure, so as to prepare fluorescent slurry for standby.
The fluorescent glue comprises the following raw materials of a first AB glue, a first fluorescent powder and a first anti-sedimentation agent, wherein the weight ratio of the first AB glue to the first fluorescent powder to the first anti-sedimentation agent is 28.7:16.27:2.62.
the first AB glue is the same as preparation example 1, the first fluorescent powder is chlorophosphate ((SrEu) 10 (PO 4) 6Cl 2) fluorescent powder, the first anti-sedimentation agent is fumed silica with the average particle size of 40nm, the diluent is isopropanol, and the purity of the isopropanol is 99.9%.
Preparation examples 6 to 11
The difference between preparation examples 6 to 11 and preparation example 1 is that: the weights of the fluorescent gel and the diluent were varied, and are shown in table 1 below.
TABLE 1
Preparation examples 12 to 14
Preparation 12 differs from preparation 5 in that: in preparation example 12, the first phosphor was a mixture of nitrogen oxide (BaSi 2O2N2: eu) phosphor and fluoride (K2 SiF6: dy) phosphor in a weight ratio of 1:1.
Preparation 13 differs from preparation 5 in that: in preparation example 13, the first fluorescent powder is prepared by mixing tungstate (Ba 4CeEuZrWO 12) fluorescent powder and silicon aluminum nitride (CaAlSiN 3: eu) fluorescent powder according to a weight ratio of 1:1.
Preparation 14 differs from preparation 5 in that: in preparation example 14, the first phosphor was molybdate (CaMoO 4: eu) 3+ ，Li + ，Bi 3+ ) Fluorescent powder.
Preparation examples 15 to 17 are preparation of sealants
Preparation example 15
Organic silica gel A and organic silica gel B are mixed according to the mass ratio of 1:1, mixing to prepare the sealant for standby.
PREPARATION EXAMPLE 16
Preparation 16 differs from preparation 15 in that: in preparation example 16, the organic silica gel A, the organic silica gel B, the diffusion powder and the pigment are mixed according to the weight ratio of 1:1:0.03:0.02, and the pigment is amber.
Preparation example 17
Preparation 17 differs from preparation 16 in that: in preparation example 17, a second phosphor, which is the same as the first phosphor in preparation example 1, and a second anti-settling agent, which is the same as the first anti-settling agent in preparation example 1, are further included. During preparation, the adhesive A, the adhesive B, the diffusion powder, the pigment, the second fluorescent powder and the second anti-sedimentation agent are mixed according to the weight ratio of 1:1:0.03:0.02:0.85: and 0.13, and mixing to obtain the sealant.
Examples 1 to 14
Example 1
As shown in fig. 1, a positive-negative electrode demarcation material 2 is embedded in a substrate 1, a cofferdam 3 is arranged on the substrate 1, a chip 4 is fixed in the cofferdam 3, and the chip 4 is electrically connected with the substrate 1 through a bonding wire 41, namely a gold wire.
The fluorescent paste 5 prepared in preparation example 1 was dispensed into the cofferdam 3 by dispensing so that the fluorescent paste 5 covered on the chip 4 and the substrate 1, then the whole chip and the substrate covered with the fluorescent paste were put into an oven at 38 ℃ and heated for 30 minutes to remove bubbles in the fluorescent paste, then the oven temperature was raised to 85 ℃ and maintained at this temperature for 30 minutes, the diluent was quickly volatilized during the high temperature heating process, the granular first fluorescent powder 51 was sunk, the first fluorescent powder 51 was covered on the chip and the substrate more uniformly, and after the diluent was escaped, the remaining materials were cured into a fluorescent film 52, as shown in fig. 2.
Then, the substrate 1 with the fluorescent film 52 attached thereto was taken out, the sealant prepared in preparation example 15 was dispensed in the dam 3 by dispensing so that the sealant covered the fluorescent film 52, and then the substrate with the sealant attached thereto was put into an oven at 170 ℃ and heated for 30 minutes so that the sealant solidified to form a sealant layer 6, as shown in fig. 3, to prepare a finished LED package.
Wherein, the thickness D1 of the fluorescent film 52 is 0.1mm, the thickness D2 of the sealing glue layer 6 is 0.3mm, as shown in fig. 3, the thickness D1 of the fluorescent film 52 refers to the distance between the upper surface of the chip 4 and the upper surface of the fluorescent film 52, and the thickness D2 of the sealing glue layer 6 refers to the distance between the upper surface of the fluorescent film 52 and the upper surface of the sealing glue layer 6.
Example 2
And (3) dispensing the fluorescent paste prepared in the preparation example 2 into a cofferdam in a dispensing mode so that the fluorescent paste covers the chips and the substrate, then, heating the whole chips and the substrate covered with the fluorescent paste in an oven at 52 ℃ for 35 minutes to remove bubbles in the fluorescent paste, then, raising the temperature of the oven to 240 ℃, keeping the temperature for 35 minutes, quickly volatilizing the diluent, and solidifying the rest substances into a fluorescent film.
And then taking out the substrate attached with the fluorescent film, dispensing the sealant prepared in the preparation example 16 in a cofferdam in a dispensing mode to cover the fluorescent film with the sealant, and then placing the substrate attached with the sealant in a 160 ℃ oven to heat for 35 minutes to solidify the sealant to form a sealant layer, so as to obtain the LED packaging finished product, wherein the thickness D1 of the fluorescent film is 0.05mm, and the thickness D2 of the sealant layer is 0.4mm.
Example 3
Dispensing the fluorescent paste prepared in preparation example 3 into a cofferdam in a dispensing mode, so that the fluorescent paste covers the chip and the substrate, then, heating the whole chip and the substrate covered with the fluorescent paste in a baking oven at 35 ℃ for 20 minutes to remove bubbles in the fluorescent paste, then, raising the temperature of the baking oven to 85 ℃, keeping the temperature for 25 minutes, quickly volatilizing the diluent in the high-temperature heating process, and solidifying the rest substances into a fluorescent film;
and then taking out the substrate attached with the fluorescent film, dispensing the sealant prepared in the preparation example 17 in a cofferdam in a dispensing mode so that the sealant covers the fluorescent film, and then placing the substrate attached with the sealant in a 250 ℃ oven for heating for 20 minutes so that the sealant is solidified to form a sealant layer, thereby obtaining the LED packaging finished product, wherein the thickness D1 of the fluorescent film is 0.075mm, and the thickness D2 of the sealant layer is 0.36mm.
Example 4
Dispensing the fluorescent paste prepared in preparation example 4 into a cofferdam in a dispensing mode, so that the fluorescent paste covers the chip and the substrate, then, heating the whole chip and the substrate covered with the fluorescent paste in a 65 ℃ oven for 40 minutes to remove bubbles in the fluorescent paste, then, raising the temperature of the oven to 210 ℃, keeping the temperature for 30 minutes, quickly volatilizing the diluent in the high-temperature heating process, and solidifying the rest substances into a fluorescent film;
and then taking out the substrate attached with the fluorescent film, dispensing the sealant prepared in the preparation example 17 in a cofferdam in a dispensing mode so that the sealant covers the fluorescent film, and then placing the substrate attached with the sealant in a 105 ℃ oven for heating for 35 minutes so that the sealant is solidified to form a sealant layer, thereby obtaining the LED packaging finished product, wherein the thickness D1 of the fluorescent film is 0.15mm, and the thickness D2 of the sealant layer is 0.28mm.
Example 5
Dispensing the fluorescent paste prepared in preparation example 5 into a cofferdam in a dispensing mode, so that the fluorescent paste covers the chip and the substrate, then, heating the whole chip and the substrate covered with the fluorescent paste in a baking oven at 48 ℃ for 25 minutes to remove bubbles in the fluorescent paste, then, raising the temperature of the baking oven to 90 ℃, keeping the temperature for 28 minutes, quickly volatilizing the diluent in the high-temperature heating process, and solidifying the rest substances into a fluorescent film;
and then taking out the substrate attached with the fluorescent film, dispensing the sealant prepared in the preparation example 16 in a cofferdam in a dispensing mode to cover the fluorescent film with the sealant, and then placing the substrate attached with the sealant in a 65 ℃ oven to heat for 40 minutes to solidify the sealant to form a sealant layer, so as to obtain the LED packaging finished product, wherein the thickness D1 of the fluorescent film is 0.2mm, and the thickness D2 of the sealant layer is 0.25mm.
The temperature and time for the removal of bubbles by heating, the temperature and time for the vaporization of the diluent by heating, and the temperature and time for the curing of the second AB glue in examples 1 to 5 are shown in table 2 below.
TABLE 2
Examples 6 to 14
Examples 6 to 14 differ from example 1 in that: the sources of the fluorescent pastes were varied, and the specific examples are shown in Table 3 below.
TABLE 3 Table 3
Comparative example 1
Comparative example 1 was prepared by a conventional natural sedimentation process, i.e., directly using the sealant prepared in preparation example 17 for encapsulation, and the drying conditions were the same as in example 3.
The finished LED packages prepared in examples 1 to 14 and comparative example 1 were measured for drop Bin yield in a sorter, and for luminous flux in a rapid spectrum analysis system, and the test results are shown in table 4 below.
TABLE 4 Table 4
As is clear from the performance test results in Table 4, the LED package products prepared in examples 1 to 14 had a drop Bin yield of 90% or more and a luminous flux of 135 lm or more. According to the method, the fluorescent film and the sealed two-step process are adopted, namely the fluorescent slurry is coated on the LED chip and the substrate, the thinner is volatilized, the granular fluorescent powder is sunk and uniformly covered on the LED chip and the substrate, after the thinner is volatilized, the residual substances are solidified into the fluorescent film, and then the fluorescent film is sealed by the sealant, so that the problem that the fluorescent powder is easily unevenly distributed after packaging is solved, and the yield and luminous flux of the packaged LED are guaranteed. In comparative example 1, a conventional natural sedimentation process and a fluorescent glue one-step molding process are adopted, so that uneven dispersion of fluorescent powder is easily caused, and the yield and luminous flux of an LED packaging finished product are low.
The foregoing are all preferred embodiments of the present application, and are not intended to limit the scope of the present application in any way, therefore: all equivalent changes in structure, shape and principle of this application should be covered in the protection scope of this application.
Claims (10)
1. The fluorescent film is characterized in that the raw materials of the fluorescent film comprise 5-90% of diluent by mass, the diluent is not easy to volatilize at normal temperature, and the diluent can volatilize rapidly when the temperature exceeds 30 ℃;
and when the LED chip and the substrate coated with the fluorescent slurry are subjected to heat treatment, the diluent in the fluorescent slurry can volatilize, and the rest substances are solidified into the fluorescent film.
2. The fluorescent film according to claim 1, wherein the diluent is an organic compound such as alkane, ether, alcohol, benzene, etc., and/or the raw material of the fluorescent film further comprises 10-95% by mass of fluorescent glue.
3. The fluorescent film of claim 2, wherein the fluorescent glue comprises a sizing, a first phosphor, and a first anti-settling agent.
4. A fluorescent film according to claim 3, wherein the glue is a first AB glue and/or the first fluorescent powder is selected from at least one of silicate fluorescent powder, chlorosilicate fluorescent powder, aluminate fluorescent powder, phosphate fluorescent powder, oxynitride fluorescent powder, nitride fluorescent powder, tungstate fluorescent powder, molybdate fluorescent powder, fluoride fluorescent powder, silicon aluminum nitride fluorescent powder and the like fluorescent powder, and/or the first anti-sedimentation agent is a compound or simple substance having anti-sedimentation effect.
5. An LED package structure, comprising the fluorescent film of claim 1 and a sealant layer, wherein the fluorescent film is used for covering an LED chip or is used for covering an LED chip and a substrate, and the sealant layer is disposed on the fluorescent film.
6. The LED package structure of claim 5, wherein the sealant layer is a second AB glue or a mixture of at least one of a diffusion powder, a second phosphor, a second anti-settling agent, and a pigment with the second AB glue.
7. A packaging method of the LED package structure of claim 5, comprising the steps of:
s1, mixing the raw materials of the fluorescent film to prepare fluorescent slurry;
s2, packaging the fluorescent paste on an LED chip and a substrate;
s3, carrying out heating treatment on the LED chip and the substrate which are packaged with the fluorescent slurry, volatilizing the diluent in the fluorescent slurry, and solidifying the rest substances into the fluorescent film.
8. The method according to claim 7, wherein in the step S3, the heating temperature of the heat treatment is 30 to 250 ℃, and/or the method further comprises the step S4: and mixing the raw materials of the sealant layer to prepare the sealant, packaging the sealant on the fluorescent film, and then performing heating treatment to cure the sealant into the sealant layer.
9. The method according to claim 8, wherein the heating temperature of the heating treatment in the step S4 is 60 to 250 ℃.
10. An LED light source, characterized in that it is manufactured by the packaging method according to any one of claims 7 to 9.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310557179 | 2023-05-17 | ||
| CN202310557179X | 2023-05-17 |
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| CN116435440A true CN116435440A (en) | 2023-07-14 |
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|---|---|---|---|
| CN202310643067.6A Pending CN116435440A (en) | 2023-05-17 | 2023-06-01 | Fluorescent film, LED packaging structure, LED light source and packaging method |
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| CN (1) | CN116435440A (en) |
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