CN116425107A - Packaging method, device and medium for wafer-level multistage vacuum environment - Google Patents
Packaging method, device and medium for wafer-level multistage vacuum environment Download PDFInfo
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- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
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- B81B7/0032—Packages or encapsulation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
- B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention provides a packaging method, a device and a medium of a wafer-level multistage vacuum environment, which relate to the technical field of microsystems and micro-nano devices, and the method comprises the following steps: forming M micro-cavity structures to be packaged corresponding to N devices to be packaged on a preset wafer by setting M sealing rings, wherein the first temperature at which the M sealing rings are bonded is inversely related to the sequence of the packaging priorities corresponding to the devices to be packaged in the M micro-cavity structures to be packaged, the M sealing rings comprise at least one first sealing ring, and the first sealing ring comprises at least one air passage; and sequentially performing packaging operation on the M types of microcavity structures to be packaged according to the sequence of the packaging priority corresponding to the devices to be packaged in the M types of microcavity structures to be packaged from high to low, so as to form a multi-level vacuum degree environment microcavity comprising M types of sealing structures, wherein the vacuum degree environment of the multi-level vacuum degree environment microcavity comprising M types of sealing structures is the preset vacuum degree environment required for the devices to be packaged in the M types of microcavity structures to be packaged.
Description
Technical Field
The invention relates to the technical field of microsystems and micro-nano devices, in particular to a packaging method, a device and a medium for a wafer-level multistage vacuum environment.
Background
Vacuum packaging or airtight packaging is a key processing technology step of Micro-nano devices such as gyroscopes, thermal radiators and the like of Micro-Electro-Mechanical Systems (MEMS) systems. The purpose of the method is to seal and maintain a microcavity environment with specific air pressure, so as to achieve the purposes of improving quality factor, reducing air heat conduction, isolating oxygen and the like, directly determine whether the packaged MEMS device can work normally and permanently and reliably, and the vacuum packaging or airtight packaging technology becomes a key factor for limiting the processing yield and reliability of various MEMS devices and is a main process link with high cost (up to 50% -90%) in the production process of MEMS factories. The wafer-level vacuum package can complete one-time sealing of thousands of devices on a wafer, has obvious efficiency and cost advantages compared with the chip-level package, is convenient for direct integration with a complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) integrated circuit wafer, and is an important research field in academia and industry.
Currently, the requirements of micro-system industry upgrade on the miniaturization and integration of MEMS devices are increasing, the traditional system level packaging method of sealing the independent devices and integrating the independent devices is outstanding in size and cost, and the realization of on-chip heterogeneous integration of multifunctional devices has become a trend, for example, multifunctional sensing units integrated with MEMS accelerometers, gyroscopes, thermal radiators and the like, for example, the integration degree and the miniaturization of the different devices can be greatly enhanced if the disposable vacuum packaging is completed on the wafer level, meanwhile, the overall processing cost is reduced, and the development of application fields of microminiature unmanned aerial vehicles, portable electronic equipment and the like is further promoted.
However, the existing method is only directed to specific devices, and realizes the sealing of the environment with single vacuum degree which is required uniformly, but the requirements of different MEMS devices on the environment with vacuum degree can be different, for example, the MEMS accelerometer needs to work in an air pressure environment of about tens of kPa, and the MEMS thermal radiator needs to work in 10 -5 ～10 -3 Working in a high vacuum environment of kPa, the prior method is difficult to realize wafer-level multistage vacuum packaging of MEMS devices with different vacuum environment requirements, and further restricts the further development of heterogeneous integration on a multi-device chip.
Disclosure of Invention
The invention provides a packaging method, a device and a medium for wafer-level multistage vacuum environment, which are used for solving the problem that the wafer-level multistage vacuum packaging of MEMS devices with different vacuum environment requirements is difficult to realize in the prior art.
The invention provides a packaging method of a wafer-level multistage vacuum environment, which comprises the following steps:
forming M microcavity structures to be packaged corresponding to N devices to be packaged on a preset wafer by setting M sealing rings, wherein N is an integer greater than 1, and M is an integer greater than 1 and less than or equal to N; the first temperature at which the M sealing rings are bonded is inversely related to the sequence of the packaging priorities corresponding to the devices to be packaged in the M microcavity structures to be packaged, wherein the M sealing rings comprise at least one first sealing ring, and the first sealing ring comprises at least one air passage;
Sequentially performing packaging operations on the M micro-cavity structures to be packaged according to the sequence from high packaging priority to low packaging priority of the devices to be packaged in the M micro-cavity structures to be packaged, so as to form a multi-level vacuum degree environment micro-cavity comprising M sealing structures, wherein the vacuum degree environment of the multi-level vacuum degree environment micro-cavity comprising M sealing structures is a preset vacuum degree environment required for the devices to be packaged in the M micro-cavity structures to be packaged;
wherein, for the current microcavity structure to be packaged in which the packaging operation is currently performed in the M microcavity structures to be packaged, the performing the packaging operation includes: and packaging the current microcavity structure to be packaged based on bonding pressure and bonding temperature corresponding to the current sealing ring of the current microcavity structure to be packaged, wherein bonding occurs between an upper sealing ring structure and a lower sealing ring structure of the current sealing ring under the bonding pressure and the bonding temperature.
According to the packaging method of the wafer-level multistage vacuum environment, which is provided by the invention, the M sealing rings further comprise second sealing rings, the second sealing rings are in complete closed shapes, and the second sealing rings are used as sealing rings corresponding to the devices to be packaged with the highest packaging priority.
According to the packaging method of the wafer-level multi-stage vacuum environment provided by the invention, for the current microcavity structure to be packaged, the performing packaging operation specifically comprises:
establishing a vacuum degree environment corresponding to a device to be packaged in the current microcavity structure to be packaged;
and packaging the current microcavity structure to be packaged based on the bonding pressure and the bonding temperature corresponding to the current sealing ring under the vacuum degree environment corresponding to the device to be packaged in the current microcavity structure to be packaged.
According to the packaging method of the wafer-level multi-stage vacuum environment provided by the invention, for the current microcavity structure to be packaged, the performing packaging operation specifically comprises:
setting a getter in the current microcavity structure to be packaged; wherein the getter is used for absorbing gas under the condition that the temperature is greater than or equal to a preset threshold value;
packaging the current microcavity structure to be packaged based on bonding pressure and bonding temperature corresponding to the current sealing ring in a preset current vacuum environment to form a current sealing structure corresponding to the current microcavity structure to be packaged; the air pressure of the current vacuum degree environment is higher than the vacuum degree environment which is required by the device to be packaged in the current microcavity structure to be packaged;
And setting bonding temperature which is larger than or equal to the threshold value for the current sealing structure to form a sealing structure corresponding to the vacuum degree environment which is required by the device to be packaged in the current microcavity structure to be packaged.
According to the packaging method of the wafer-level multistage vacuum environment, the wafer comprises a device wafer and a sealing cover wafer, N devices to be packaged are arranged on the device wafer, a lower sealing ring structure is arranged on the device wafer, an upper sealing ring structure is arranged on the sealing cover wafer, and the upper sealing ring structure and the lower sealing ring structure are correspondingly arranged.
According to the packaging method of the wafer-level multistage vacuum environment, materials of the upper sealing ring structure and the lower sealing ring structure are the same or different.
The invention also provides a packaging device of the wafer-level multistage vacuum environment, which comprises:
the device comprises a setting module, a sealing module and a sealing module, wherein the setting module is used for forming M microcavity structures to be packaged corresponding to N devices to be packaged on a preset wafer by setting M sealing rings, N is an integer greater than 1, and M is an integer greater than 1 and less than or equal to N; the first temperature at which the M sealing rings are bonded is inversely related to the sequence of the packaging priorities corresponding to the devices to be packaged in the M microcavity structures to be packaged, wherein the M sealing rings comprise at least one first sealing ring, and the first sealing ring comprises at least one air passage;
The packaging module is used for sequentially performing packaging operation on the M micro-cavity structures to be packaged according to the sequence from high to low of packaging priorities of the devices to be packaged in the M micro-cavity structures to be packaged, so as to form a multi-level vacuum degree environment micro-cavity comprising M sealing structures, wherein the vacuum degree environment of the multi-level vacuum degree environment micro-cavity comprising M sealing structures is a preset required vacuum degree environment corresponding to the devices to be packaged in the M micro-cavity structures to be packaged;
wherein, for the current microcavity structure to be packaged in which the packaging operation is currently performed in the M microcavity structures to be packaged, the performing the packaging operation includes: and packaging the current microcavity structure to be packaged based on bonding pressure and bonding temperature corresponding to the current sealing ring of the current microcavity structure to be packaged, wherein bonding occurs between an upper sealing ring structure and a lower sealing ring structure of the current sealing ring under the bonding pressure and the bonding temperature.
The invention also provides an electronic device, which comprises a memory, a processor and a computer program stored on the memory and capable of running on the processor, wherein the processor realizes the packaging method of the wafer-level multi-level vacuum environment when executing the program.
The present invention also provides a non-transitory computer readable storage medium having stored thereon a computer program which, when executed by a processor, implements a method of packaging a wafer level multi-level vacuum environment as described in any of the above.
The invention also provides a computer program product comprising a computer program which when executed by a processor implements a method of packaging a wafer level multi-level vacuum environment as described in any of the above.
According to the packaging method, the device and the medium for the wafer-level multistage vacuum environment, the sealing rings which are bonded at different temperatures are arranged on the same wafer, and the at least one air passage is arranged on the at least one first sealing ring, so that for the first sealing ring, under the condition that the required vacuum environment is established through the air passage in a microcavity structure to be packaged where a device to be packaged is located, the first sealing ring can be packaged by adopting bonding pressure and bonding temperature corresponding to the first sealing ring, particularly, the first sealing ring is subjected to molten state transformation through the bonding temperature, the air passage is filled in a backflow mode, the first sealing ring material is finally transformed into a solid state under the effect of the bonding temperature and the bonding pressure, so that the bonding is completed, the device to be packaged is packaged by adopting a microcavity structure to be packaged corresponding to the device to be packaged, and the first sealing ring which is not bonded can still be packaged through the set up, the wafer-level multistage vacuum environment can be packaged by adopting the principle, the problem that the conventional method can only realize uniform required single vacuum environment packaging can be solved, the structure is simple, the wafer-level multistage vacuum environment can be manufactured by adopting the principle, the micro-processing device can be manufactured by adopting the micro-processing technology, and the micro-scale Feng Gaijing is convenient to manufacture the wafer, and the wafer can be manufactured by adopting the micro-processing technology to be convenient to be manufactured by the standard.
Drawings
In order to more clearly illustrate the invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a packaging method of a wafer level multi-level vacuum environment provided by the invention;
FIG. 2 is a schematic diagram of a sealing ring in a packaging method of a wafer level multi-level vacuum environment provided by the invention;
FIG. 3 is a schematic diagram of a first level package in a method for packaging a wafer level multi-level vacuum environment according to the present invention;
FIG. 4 is a schematic diagram of a second level package in a method for packaging a wafer level multi-level vacuum environment according to the present invention;
FIG. 5 is a schematic diagram of a three-level package in a method for packaging a wafer level multi-level vacuum environment according to the present invention;
fig. 6 is a schematic structural diagram of a packaging apparatus in a wafer level multi-level vacuum environment according to the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The packaging method, device and medium of the wafer-level multi-level vacuum environment are described below with reference to the accompanying drawings.
Fig. 1 is a flow chart of a packaging method of a wafer level multi-level vacuum environment provided by the present invention, as shown in fig. 1, the method includes steps S101 to S102; wherein:
s101, forming M microcavity structures to be packaged corresponding to N devices to be packaged on a preset wafer by setting M sealing rings, wherein N is an integer greater than 1, and M is an integer greater than 1 and less than or equal to N; the first temperature at which the M sealing rings are bonded is inversely related to the sequence of the packaging priorities corresponding to the devices to be packaged in the M microcavity structures to be packaged, wherein the M sealing rings comprise at least one first sealing ring, and the first sealing ring comprises at least one air passage;
step S102, sequentially performing packaging operations on the M micro-cavity structures to be packaged according to the sequence from high to low of packaging priorities of the devices to be packaged in the M micro-cavity structures to be packaged, so as to form a multi-level vacuum degree environment micro-cavity comprising M sealing structures, wherein the vacuum degree environment of the multi-level vacuum degree environment micro-cavity comprising M sealing structures is a preset required vacuum degree environment corresponding to the devices to be packaged in the M micro-cavity structures to be packaged;
Wherein, for the current microcavity structure to be packaged in which the packaging operation is currently performed in the M microcavity structures to be packaged, the performing the packaging operation includes: and packaging the current microcavity structure to be packaged based on bonding pressure and bonding temperature corresponding to the current sealing ring of the current microcavity structure to be packaged, wherein bonding occurs between an upper sealing ring structure and a lower sealing ring structure of the current sealing ring under the bonding pressure and the bonding temperature.
In the related art, the vacuum requirements for different MEMS devices may be different, for example, MEMS accelerometers need to operate in an air pressure environment of about several tens kPa, while MEMS thermal radiators need 10 -5 ～10 -3 High vacuum environment of kPa. Therefore, the wafer-level multi-level vacuum packaging of MEMS devices with different sealing pressure requirements is an urgent need, and the existing method is generally only aimed at a single vacuum degree required by a specific device to achieve uniformityEnvironmental packaging restricts the further development of heterogeneous integration on multi-device chips.
In view of the above problems, the embodiments of the present invention provide the following technical ideas: the different sealed microcavities are packaged step by step under different vacuum environments by sealing rings which are arranged on the wafer and are bonded at different temperatures, so that the different vacuum environments are packaged in the different sealed microcavities.
Specifically, M micro-cavity structures corresponding to N devices to be packaged can be formed on a preset wafer by setting M sealing rings, N is an integer greater than 1, M is an integer greater than 1 and less than or equal to N, wherein a first temperature at which bonding occurs between the M sealing rings and a sequence of packaging priorities corresponding to the devices to be packaged in the M micro-cavity structures to be packaged are inversely related, specifically, the higher the packaging priorities corresponding to the devices to be packaged are, the lower the first temperature at which bonding occurs between the selected sealing rings is, in a process that the bonding temperature is increased from low, the sealing rings with lower first temperature are bonded first, the sealing rings bonded first are packaged, the M sealing rings comprise at least one first sealing ring, and the first sealing ring comprises at least one ventilation channel.
It should be noted that, corresponding microcavity structures to be packaged can be formed for the N devices to be packaged, which corresponds to forming N microcavity structures to be packaged in a conformal manner; the same microcavity structure to be packaged can also be formed for a plurality of devices to be packaged corresponding to the environments with the same requirement for vacuum degree, and M is smaller than N at the moment.
It should be further noted that the same kind of sealing rings can be correspondingly arranged on the devices to be packaged in the same vacuum degree environment, so as to form the same kind of microcavity structure to be packaged, and the same kind of microcavity structure to be packaged can simultaneously perform packaging operation under the condition of establishing the common corresponding vacuum degree environment;
Alternatively, different types of sealing rings (corresponding to different packaging priorities) may be employed for each sealing ring, or the same sealing ring (corresponding to the same packaging priority) may be employed for a plurality of sealing rings.
Alternatively, the first temperatures at which bonding with the same seal ring occurs are typically the same or similar.
Optionally, the sealing rings corresponding to the N devices to be packaged, which are disposed on the wafer, may be determined based on the preset packaging priorities corresponding to the devices to be packaged in the M microcavity structures to be packaged, specifically, parameters and structures of the sealing rings may be determined, parameters of the sealing rings may include a first temperature at which bonding of the sealing rings occurs, and structures of the sealing rings may include the number of the set air channels (gaps), positions of the air channels, and the like.
After M microcavity structures to be packaged corresponding to N devices to be packaged are formed, sequentially performing packaging operation on the M microcavity structures to be packaged according to the sequence from high packaging priority to low packaging priority corresponding to the devices to be packaged in the M microcavity structures to be packaged, so as to form a multi-level vacuum environment microcavity comprising M sealing structures, wherein the vacuum environment of the multi-level vacuum environment microcavity particularly comprising M sealing structures is a preset vacuum environment required for the devices to be packaged in the M microcavity structures to be packaged;
For a current microcavity structure to be packaged in which a packaging operation is currently performed in the M microcavity structures to be packaged, performing the packaging operation includes: and packaging the current microcavity structure to be packaged based on the bonding pressure and the bonding temperature corresponding to the current sealing ring of the current microcavity structure to be packaged, wherein bonding occurs between the upper sealing ring structure and the lower sealing ring structure of the current sealing ring under the bonding pressure and the bonding temperature.
Specifically, the packaging can be started from the device to be packaged with the highest packaging priority, the vacuum degree environment corresponding to the device to be packaged with the highest packaging priority is firstly established, and when the bonding temperature is higher than or equal to the first temperature of the sealing ring corresponding to the device to be packaged with the highest packaging priority, the micro-cavity structure corresponding to the device to be packaged with the highest packaging priority can be packaged by combining with proper bonding pressure, namely the device to be packaged with the highest packaging priority is packaged; the microcavity structure to be packaged of the next packaging priority is still ventilated with the outside through the air duct, so that the vacuum degree environment of the next-stage requirement is conveniently constructed;
When the bonding temperature is continuously increased, a vacuum degree environment corresponding to the current device to be packaged can be continuously established, and the sealing ring of the current device to be packaged is packaged by adopting bonding pressure and bonding temperature corresponding to the sealing ring of the current device to be packaged;
the vacuum degree environments of the requirements corresponding to the devices to be packaged can be the same or different, the difference of the vacuum degree environments can be larger, and the specific vacuum degree environments can be set by technicians according to actual conditions so as to realize wafer-level large-span multi-stage vacuum degree environment packaging.
Alternatively, the device to be packaged may be a micro-nano device, such as a MEMS switch, MEMS accelerometer, MEMS thermal radiator, etc.
In the packaging method of the wafer-level multistage vacuum environment provided by the embodiment of the invention, the sealing rings which are bonded at different temperatures are arranged on the same wafer, at least one air passage is arranged on at least one first sealing ring, for the first sealing ring, under the condition that the required vacuum environment is established through the air passage in a microcavity structure to be packaged where a device to be packaged is positioned, the first sealing ring can be packaged by adopting bonding pressure and bonding temperature corresponding to the first sealing ring, particularly, the first sealing ring part of materials are subjected to melt state transformation through the bonding temperature, the air passage is filled in a backflow manner, and the first sealing ring materials are finally converted into solid state under the action of the bonding temperature and the bonding pressure, so that the bonding is completed, the packaging is carried out on the microcavity structure to be packaged corresponding to the device to be packaged, and the first sealing ring which is not bonded can still establish the corresponding required vacuum environment through the arranged, and the packaging is carried out on the same principle, the wafer-level multistage vacuum environment can be packaged by only, the problem that the conventional method can be packaged by adopting the single vacuum environment with unified requirement can be solved, the structure is simple, the micro-processing technology can be realized, and the micro-processing equipment can be conveniently used for preparing the wafer-level Feng Gaijing, and the wafer is convenient to prepare the wafer-level and the wafer-level 52process is convenient to be manufactured.
Optionally, the wafer may include a device wafer and a capping wafer, the N devices to be packaged are disposed on the device wafer, the lower seal ring structure is disposed on the device wafer, the upper seal ring structure is disposed on the capping wafer, and the lower seal ring structure is disposed corresponding to the upper seal ring structure.
Specifically, the wafer may include two parts of a device wafer and a capping wafer, N devices to be packaged are disposed on the device wafer, each sealing ring may include a lower sealing ring structure disposed on the device wafer, and an upper sealing ring structure disposed on the capping wafer, where the upper sealing ring structure and the lower sealing ring structure are disposed correspondingly, and are configured to enclose the devices to be packaged to form a microcavity structure to be packaged, and at a first temperature, bonding may occur between the upper sealing ring structure and the lower sealing ring structure, so as to implement packaging of the microcavity structure to be packaged.
Alternatively, the device wafer and the cap wafer may both be silicon wafers;
alternatively, the aligned device wafer and cover wafer may be loaded into a wafer bonder to establish a desired vacuum environment through the wafer bonder and to load bonding pressure and bonding temperature for packaging.
Optionally, the materials of the upper sealing ring structure and the lower sealing ring structure may be the same or different, so long as bonding can occur between the upper sealing ring structure and the lower sealing ring structure, for example, transfer liquid bonding can occur, firstly, part of the materials are converted into a molten state under the action of bonding temperature, reflowing and filling the air duct, and finally, an intermetallic compound with a higher melting point is generated, so that packaging of the microcavity structure to be packaged is realized, and packaging of the vacuum degree environment required by the device to be packaged is completed.
Specifically, the upper sealing ring structure and the lower sealing ring structure can be made of copper-tin double-layer metal, or single metal such as gold, indium and the like.
Optionally, the M sealing rings may further include a second sealing ring, where the second sealing ring is in a complete closed shape, and the second sealing ring is used as a sealing ring corresponding to the device to be packaged with the highest packaging priority.
Specifically, the second sealing ring in a complete closed shape can be arranged for the device to be packaged with the highest packaging priority, namely, the second sealing ring in a complete closed shape is arranged for the device to be packaged which needs to be packaged first, which can be understood that no air passage is arranged on the second sealing ring, and the first sealing ring is arranged for other devices to be packaged;
The sealing ring which is in a complete closed shape can be arranged on the device to be packaged which is packaged firstly, a corresponding vacuum requirement environment is not required to be established on the device to be packaged which is packaged firstly through the air passage, and the packaging efficiency can be improved to a certain extent.
Optionally, for the current microcavity structure to be packaged, the performing a packaging operation may specifically include:
establishing a vacuum degree environment corresponding to a device to be packaged in the current microcavity structure to be packaged;
and packaging the current microcavity structure to be packaged based on the bonding pressure and the bonding temperature corresponding to the current sealing ring under the vacuum degree environment corresponding to the device to be packaged in the current microcavity structure to be packaged.
Specifically, for the packaging of each level of microcavity structure to be packaged, a required vacuum degree environment corresponding to a device to be packaged in the current microcavity structure to be packaged can be established, and then the current microcavity structure to be packaged is packaged in the required vacuum degree environment, specifically, the current microcavity structure to be packaged can be packaged by utilizing a wafer bonding process based on bonding pressure and bonding temperature corresponding to a current sealing ring.
Optionally, for the current microcavity structure to be packaged, the performing a packaging operation may specifically include:
Setting a getter in the current microcavity structure to be packaged; wherein the getter is used for absorbing gas under the condition that the temperature is greater than or equal to a preset threshold value;
packaging the current microcavity structure to be packaged based on bonding pressure and bonding temperature corresponding to the current sealing ring in a preset current vacuum environment to form a current sealing structure corresponding to the current microcavity structure to be packaged; the air pressure of the current vacuum degree environment is higher than the vacuum degree environment which is required by the device to be packaged in the current microcavity structure to be packaged;
and setting bonding temperature which is larger than or equal to the threshold value for the current sealing structure to form a sealing structure corresponding to the vacuum degree environment which is required by the device to be packaged in the current microcavity structure to be packaged.
Specifically, the packaging operation can be performed by using a getter, so that the microcavity structure to be packaged reaches the corresponding vacuum degree environment after being packaged;
for packaging of the current microcavity structure to be packaged, firstly, a getter can be arranged in the current microcavity structure to be packaged, the arrangement amount of the getter can be set by an operator based on actual conditions, and the arrangement position in the current microcavity structure to be packaged can also be set based on actual conditions, for example, the getter can be arranged on the side of a sealing cover wafer of the current microcavity structure to be packaged;
After the getter is arranged, the current microcavity structure to be packaged can be packaged, and as the getter can further reduce the air pressure in the sealing structure (namely improve the vacuum degree) by absorbing the air after being activated, the current microcavity structure to be packaged can be packaged in the current vacuum degree environment higher than the environment air pressure of the required vacuum degree, and the current microcavity structure to be packaged can be particularly packaged based on the bonding pressure and the bonding temperature corresponding to the current sealing ring, so that the current sealing structure corresponding to the current microcavity structure to be packaged is formed;
after the current sealing structure is formed by packaging the current microcavity structure to be packaged, the bonding temperature which is larger than or equal to the threshold value can be set for the current sealing structure so as to activate the set getter, and the air pressure of the current sealing structure is further reduced by absorbing the air, so that the environment with the required vacuum degree is achieved.
Optionally, the getter may be disposed in the microcavity structure to be packaged corresponding to the device to be packaged under the condition that the air pressure required by the vacuum environment to be packaged is low and it is difficult to directly establish the vacuum environment to be packaged, and the getter may be disposed on the wafer side of the microcavity structure to be packaged, and after packaging is completed, the air pressure is further reduced by activating the getter at a bonding temperature greater than or equal to a threshold value.
Alternatively, the getters are, for example, titanium-based and vanadium-based getters.
The following illustrates a packaging method of a wafer level multi-level vacuum environment provided by an embodiment of the present invention.
1. Taking packaging in a two-stage vacuum environment as an example, the method comprises the following steps:
step 1: fig. 2 is a schematic diagram of a sealing ring arranged in the packaging method of the wafer level multi-level vacuum environment, and as shown in fig. 2, preparation of a device wafer 101 and a sealing cover wafer 201, and preparation of a sealing ring structure 301 and a sealing ring structure 302 with a notch (air duct) are completed; the seal ring structure 301 with the notch may be arranged with the notch on the cap wafer, and the seal ring structure at the corresponding position on the device wafer may be closed, or vice versa.
The device wafer 101 and the capping wafer 201 provided in the embodiment of the present invention are both silicon wafers, wherein the device wafer includes micro-nano devices 102 and 103 to be packaged (to be packaged devices), and the respective required packaging vacuum requirements are different, for example, the micro-nano device 102 provided in the embodiment of the present invention is a MEMS switch, and the micro-nano device 103 is a MEMS accelerometer;
optionally, the capping wafer 201 further includes sealed microcavities (microcavity structures to be packaged) 202 and 203 that provide packaging spaces for the micro-nano devices 102 and 103, and the micromachining process can be completed by preparing a photoresist mask plate through photolithography and then performing deep reactive ion etching through silicon;
The sealing ring structure 301 provided by the embodiment of the invention is copper-tin double-layer metal, the sealing ring structure 302 is gold, the shape is square, and the four vertexes are designed to be round corners, wherein the widths of the sealing ring structures 301 and 302 on the sealing cover wafer 201 are 10-50 μm, the heights are 1-5 μm, and the micromachining process can be completed by combining a standard photoetching process with a material deposition process such as an electroplating process or magnetron sputtering process; the seal ring structures 301 and 302 corresponding to the device wafer 101 are identical to the material and shape on the cap wafer, except that they are all closed structures.
Step 2: fig. 3 is a schematic diagram of first level packaging in the packaging method of wafer level multi-level vacuum environment provided by the invention, as shown in fig. 3, the aligned device wafer 101 and the capping wafer 201 are loaded into the wafer bonding apparatus 401, then the air pressure in the inner cavity of the wafer bonding apparatus is pumped to the set first level air pressure P1, so that the air pressure environment is also built up to the level P1 in the sealed microcavity 203, and the embodiment of the invention can be set to 10kPa, then the bonding pressure F1 and the bonding temperature T1 are loaded, so that the sealing ring structures 301 and 302 are contacted, wherein the sealing ring structure 302 is thermally bonded and packaged, the packaging of the vacuum environment required by the device 103 is completed, and the sealing ring structure 301 still has a notch air passage, and the packaging is not completed yet;
The bonding pressure F1 provided in this embodiment may be finally determined according to the density of the seal ring structure on the wafer, and the bonding temperature is set to 250 ℃.
Step 3: fig. 4 is a schematic diagram of a second level package in the packaging method of a wafer level multi-level vacuum environment provided by the present invention, as shown in fig. 4, the air pressure in the inner cavity of the wafer bonding apparatus is pumped to a set second level air pressure P2, so that the air pressure environment is also built up to a level P2 in the sealed microcavity 202, and the embodiment of the present invention can be set to 0.01kPa, then the bonding pressure F2 and the bonding temperature T2 are loaded, so that the sealing ring structure 301 performs transfer liquid phase bonding, the tin material is converted into a molten state in an initial bonding stage, and the gap is filled by reflow, and finally, an intermetallic compound with a higher melting point is never formed into a solid state with copper, so that the packaging of the sealed microcavity 202 is finally realized, thereby completing the packaging of the vacuum environment required by the micro-nano device 102;
the bonding pressure F2 provided by the embodiment of the invention can be finally determined according to the density of the sealing ring structure on the wafer, and the bonding temperature is set to be 350 ℃.
Optionally, after the above steps are completed, a polymer material may be filled between the bonded cap wafer and the device wafer by capillary force, so as to enhance the bonding strength and reliability of the seal ring.
2. Taking packaging in a three-level vacuum environment as an example, the method comprises the following steps:
steps 1 to 3 may refer to steps 1 to 3 in the package of the two-stage vacuum environment;
fig. 5 is a schematic diagram of three-level packaging in the packaging method of a wafer-level multi-level vacuum environment provided by the present invention, as shown in fig. 5, wherein on the basis of the above-mentioned scheme, the sealing microcavity 204 required for packaging the third micro-nano device 104 and the getter 205 for vacuum purification are added, and the required sealing ring structure is consistent with the sealing ring structure 301 shown in fig. 2;
the micro-nano device 104 provided by the embodiment of the invention can be a MEMS gyroscope, and the getter 205 can be a titanium-based getter and a vanadium-based getter, and can be deposited by combining a standard photoetching process with a sputtering process;
step 4: further loading bonding pressure F3 and bonding temperature T3 on the basis of the steps 1-3, wherein the air pressure environment can be regulated into a normal air pressure environment, and the getter is activated under the action of T3, so that the air pressure of the sealed microcavity is further reduced to P3 level on the basis of P2, namely 10 -3 ～10 -5 kPa level, thereby meeting vacuum packaging requirements of micro-nano device 104;
in the embodiment of the invention, the bonding pressure F3 is only used for conveniently applying the bonding temperature T3, so that the bonding temperature T3 and the holding time thereof can be only about 1kN, and can be adjusted and determined according to the specific getter type and the target air pressure.
According to the embodiment of the invention, on the basis of two-stage vacuum degree packaging, the structure and the type of the sealing ring are not changed, only the getter is used, part of the sealing ring is arranged in a certain type of sealing ring structure on the Feng Gaijing circle, and on the basis of the packaging process steps, the third-stage bonding temperature and the bonding pressure are loaded, so that the micro-cavity which is partially packaged and contains the getter reaches a higher vacuum degree level, and the three-stage and more-stage vacuum degree environment packaging is realized.
3. In the wafer-level multi-level vacuum environment packaging method, the wafer bonding and packaging process comprises the following steps:
s1: different sealing ring structures are respectively prepared on the sealing cover wafer and the device wafer, and the preparation method can be realized by a conventional photoetching process and a material deposition process, and comprises the standard micro-processing process steps of evaporation, plasma sputtering, electroplating and the like, wherein the device wafer comprises a micro-nano device to be vacuum packaged and is arranged in a micro-cavity structure to be packaged;
optionally, the sealing microcavity can be completed on the capping wafer through plasma etching and other processes, so that the device wafer preparation process only needs to change the preparation steps of the sealing ring structure, thereby reducing the influence on the standard device wafer preparation flow to the greatest extent.
S2: aligning and loading the sealing cover wafer and the device wafer into a wafer bonding instrument, establishing a first-level air pressure environment, and loading first-level bonding pressure and bonding temperature, so that the sealing ring structure finishes packaging firstly, namely the first-level vacuum degree packaging, and the sealing ring structure with the notch is still communicated with the inner cavity of the wafer bonding instrument through the notch;
s3: establishing a second-stage air pressure environment, loading second-stage bonding pressure and bonding temperature to enable the sealing ring structure part containing the notch to be converted into a molten state, reflowing and filling the notch, and finally converting into a solid state so as to enable the sealing ring structure to complete packaging, namely completing second-stage vacuum degree packaging;
optionally, the wafer-level multi-level vacuum degree environment packaging method can prepare two or more seal ring structures containing gaps and made of different materials, and the multi-level vacuum degree packaging of three or more levels is further realized by loading the bonding pressure and the bonding temperature of the third level or more levels, namely, the steps of S4 and the like are added after S3.
Compared with the prior art, the packaging method of the wafer-level multistage vacuum environment provided by the embodiment of the invention has at least the following advantages:
(1) The wafer level large-span multi-stage vacuum degree environment package can be realized by using different sealing ring structures on the same wafer, and the limitation that the prior method can only realize single-type air pressure package or can only repair on the basis of higher vacuum by using a getter so as not to realize large-span air pressure package is overcome;
(2) The structure is simple, standard micro-machining process flow and equipment are adopted, the large-scale application is convenient, and the sealed microcavity can be independently prepared on a Feng Gaijing wafer, so that the influence on the existing preparation process of the device wafer is reduced to the greatest extent;
(3) The wafer level large-span pneumatic packaging method has the outstanding advantages of realizing wafer level large-span pneumatic packaging by single-step bonding, is flexible in process, can accurately and efficiently realize wafer level integration and packaging for micro-nano devices with different packaging vacuum requirements, and provides a new solution for realizing multi-device wafer level on-chip integration in the future.
The wafer-level multi-level vacuum environment packaging method provided by the invention can provide a key packaging technology solution for wafer-level multi-function, microminiaturization and low-cost on-chip integration of different MEMS/Nano electromechanical system (Nano-Electromechanical Systems, NEMS) devices, and is hopeful to promote the industrial upgrading of the packaging field in China.
The wafer-level multi-level vacuum environment packaging device provided by the invention is described below, and the wafer-level multi-level vacuum environment packaging device and the wafer-level multi-level vacuum environment packaging method described above can be correspondingly referred to each other.
Fig. 6 is a schematic structural diagram of a packaging apparatus for a wafer level multi-level vacuum environment according to the present invention, and as shown in fig. 6, a packaging apparatus 600 for a wafer level multi-level vacuum environment includes: the wafer 601, and the N devices 602 to be packaged and the M sealing rings 603 that are disposed on the wafer 601, where the M sealing rings 603 are used to form M microcavity structures 604 to be packaged corresponding to the N devices 602 to be packaged, a first bonding temperature of the M sealing rings 603 is inversely related to a sequence of packaging priorities corresponding to the devices 602 to be packaged in the M microcavity structures 604 to be packaged, at least one first sealing ring is included in the M sealing rings 603, the first sealing ring includes at least one air duct, and bonding occurs between an upper sealing ring structure and a lower sealing ring structure of the M sealing rings 603 under bonding pressure and bonding temperature corresponding to the M sealing rings 603, so as to form a multi-stage vacuum environment microcavity including M sealing structures, and the vacuum environment of the multi-stage vacuum environment microcavity including M sealing structures is a preset integer greater than 1 and less than or equal to N.
In the packaging device of the wafer-level multistage vacuum environment provided by the embodiment of the invention, the sealing rings which are bonded at different temperatures are arranged on the same wafer, and at least one air passage is arranged on at least one first sealing ring, for the first sealing ring, under the condition that the required vacuum environment is established through the air passage in a microcavity structure to be packaged where a device to be packaged is positioned, the first sealing ring can be packaged by adopting bonding pressure and bonding temperature corresponding to the first sealing ring, particularly, the first sealing ring is subjected to molten state transformation through the bonding temperature, the air passage is filled in a backflow manner, and the first sealing ring material is finally transformed into a solid state under the action of the bonding temperature and the bonding pressure, so that the bonding is completed, the device to be packaged is packaged by adopting a microcavity structure to be packaged corresponding to the device to be packaged, and the first sealing ring which is not bonded can still establish the corresponding required vacuum environment through the arranged, and the packaging can be realized by adopting the principle, the wafer-level multistage vacuum environment can only realize the uniform required single vacuum environment packaging, and the problem of the structure is simple, the micro-processing technology can be realized by adopting the structure and the micro-processing equipment, and the micro-processing technology can be conveniently used for preparing the wafer Feng Gaijing, and the wafer is convenient to prepare the wafer scale and the device is convenient to be manufactured.
Optionally, the M sealing rings further include a second sealing ring, where the second sealing ring is in a complete closed shape, and the second sealing ring is used as a sealing ring corresponding to a device to be packaged with the highest packaging priority;
optionally, the M microcavity structures to be packaged sequentially execute the packaging operations according to the sequence from high to low of the packaging priorities corresponding to the devices to be packaged in the M microcavity structures to be packaged;
wherein, for the current microcavity structure to be packaged in which the packaging operation is currently performed in the M microcavity structures to be packaged, the performing the packaging operation includes: and packaging the current microcavity structure to be packaged based on the bonding pressure and the bonding temperature corresponding to the current sealing ring of the current microcavity structure to be packaged.
Optionally, the wafer includes a device wafer and a capping wafer, the N devices to be packaged are disposed on the device wafer, the lower sealing ring structure is disposed on the device wafer, the upper sealing ring structure is disposed on the capping wafer, and the upper sealing ring structure and the lower sealing ring structure are disposed correspondingly.
Optionally, the materials of the upper seal ring structure and the lower seal ring structure are the same or different.
In yet another aspect, the present invention also provides a non-transitory computer readable storage medium having stored thereon a computer program which, when executed by a processor, is implemented to perform a method of packaging a wafer level multi-level vacuum environment provided by the above methods, the method comprising:
forming M microcavity structures to be packaged corresponding to N devices to be packaged on a preset wafer by setting M sealing rings, wherein N is an integer greater than 1, and M is an integer greater than 1 and less than or equal to N; the first temperature at which the M sealing rings are bonded is inversely related to the sequence of the packaging priorities corresponding to the devices to be packaged in the M microcavity structures to be packaged, wherein the M sealing rings comprise at least one first sealing ring, and the first sealing ring comprises at least one air passage;
sequentially performing packaging operations on the M micro-cavity structures to be packaged according to the sequence from high packaging priority to low packaging priority of the devices to be packaged in the M micro-cavity structures to be packaged, so as to form a multi-level vacuum degree environment micro-cavity comprising M sealing structures, wherein the vacuum degree environment of the multi-level vacuum degree environment micro-cavity comprising M sealing structures is a preset vacuum degree environment required for the devices to be packaged in the M micro-cavity structures to be packaged;
Wherein, for the current microcavity structure to be packaged in which the packaging operation is currently performed in the M microcavity structures to be packaged, the performing the packaging operation includes: and packaging the current microcavity structure to be packaged based on bonding pressure and bonding temperature corresponding to the current sealing ring of the current microcavity structure to be packaged, wherein bonding occurs between an upper sealing ring structure and a lower sealing ring structure of the current sealing ring under the bonding pressure and the bonding temperature.
The apparatus embodiments described above are merely illustrative, wherein the elements illustrated as separate elements may or may not be physically separate, and the elements shown as elements may or may not be physical elements, may be located in one place, or may be distributed over a plurality of network elements. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment. Those of ordinary skill in the art will understand and implement the present invention without undue burden.
From the above description of the embodiments, it will be apparent to those skilled in the art that the embodiments may be implemented by means of software plus necessary general hardware platforms, or of course may be implemented by means of hardware. Based on this understanding, the foregoing technical solution may be embodied essentially or in a part contributing to the prior art in the form of a software product, which may be stored in a computer readable storage medium, such as ROM/RAM, a magnetic disk, an optical disk, etc., including several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute the method described in the respective embodiments or some parts of the embodiments.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. The packaging method of the wafer-level multistage vacuum environment is characterized by comprising the following steps of:
forming M microcavity structures to be packaged corresponding to N devices to be packaged on a preset wafer by setting M sealing rings, wherein N is an integer greater than 1, and M is an integer greater than 1 and less than or equal to N; the first temperature at which the M sealing rings are bonded is inversely related to the sequence of the packaging priorities corresponding to the devices to be packaged in the M microcavity structures to be packaged, wherein the M sealing rings comprise at least one first sealing ring, and the first sealing ring comprises at least one air passage;
sequentially performing packaging operations on the M micro-cavity structures to be packaged according to the sequence from high packaging priority to low packaging priority of the devices to be packaged in the M micro-cavity structures to be packaged, so as to form a multi-level vacuum degree environment micro-cavity comprising M sealing structures, wherein the vacuum degree environment of the multi-level vacuum degree environment micro-cavity comprising M sealing structures is a preset vacuum degree environment required for the devices to be packaged in the M micro-cavity structures to be packaged;
Wherein, for the current microcavity structure to be packaged in which the packaging operation is currently performed in the M microcavity structures to be packaged, the performing the packaging operation includes: and packaging the current microcavity structure to be packaged based on bonding pressure and bonding temperature corresponding to the current sealing ring of the current microcavity structure to be packaged, wherein bonding occurs between an upper sealing ring structure and a lower sealing ring structure of the current sealing ring under the bonding pressure and the bonding temperature.
2. The method for packaging a wafer-level multi-level vacuum environment according to claim 1, wherein the M sealing rings further comprise a second sealing ring, the second sealing ring is in a complete closed shape, and the second sealing ring is used as a sealing ring corresponding to a device to be packaged with the highest packaging priority.
3. The method for packaging a wafer level multi-level vacuum environment according to claim 1 or 2, wherein for the current microcavity structure to be packaged, the performing a packaging operation specifically includes:
establishing a vacuum degree environment corresponding to a device to be packaged in the current microcavity structure to be packaged;
and packaging the current microcavity structure to be packaged based on the bonding pressure and the bonding temperature corresponding to the current sealing ring under the vacuum degree environment corresponding to the device to be packaged in the current microcavity structure to be packaged.
4. The method for packaging a wafer level multi-level vacuum environment according to claim 1 or 2, wherein for the current microcavity structure to be packaged, the performing a packaging operation specifically includes:
setting a getter in the current microcavity structure to be packaged; wherein the getter is used for absorbing gas under the condition that the temperature is greater than or equal to a preset threshold value;
packaging the current microcavity structure to be packaged based on bonding pressure and bonding temperature corresponding to the current sealing ring in a preset current vacuum environment to form a current sealing structure corresponding to the current microcavity structure to be packaged; the air pressure of the current vacuum degree environment is higher than the vacuum degree environment which is required by the device to be packaged in the current microcavity structure to be packaged;
and setting bonding temperature which is larger than or equal to the threshold value for the current sealing structure to form a sealing structure corresponding to the vacuum degree environment which is required by the device to be packaged in the current microcavity structure to be packaged.
5. The method for packaging a wafer-level multi-level vacuum environment according to claim 1 or 2, wherein the wafer comprises a device wafer and a capping wafer, the N devices to be packaged are disposed on the device wafer, the lower sealing ring structure is disposed on the device wafer, the upper sealing ring structure is disposed on the capping wafer, and the upper sealing ring structure is disposed corresponding to the lower sealing ring structure.
6. The method of claim 5, wherein the upper seal ring structure and the lower seal ring structure are made of the same or different materials.
7. The utility model provides a wafer level multistage vacuum degree environment's packaging hardware which characterized in that includes: the wafer and N wait to encapsulate the device and the M kind of sealing washer of setting on the wafer, M kind of sealing washer is used for forming N wait to encapsulate the device corresponding M kind of microcavity structure, the first temperature that M kind of sealing washer takes place the bonding is negative correlation with the order of the encapsulation priority that wait to encapsulate the device and correspond in the M kind of microcavity structure to wait to encapsulate, include at least one first sealing washer in the M kind of sealing washer, first sealing washer includes at least one air vent, the bonding takes place under the bonding pressure and the bonding temperature that M kind of sealing washer corresponds between the upper sealing washer structure and the lower sealing washer structure of M kind of sealing washer to form the multistage vacuum degree environment microcavity that includes M kind of sealing structure, for the demand vacuum degree environment that M kind wait to encapsulate the device corresponds in the M kind of microcavity structure to encapsulate in advance, M is greater than 1's integer, M is greater than 1 and less than or equal to N integer.
8. The packaging device of the wafer-level multi-level vacuum environment according to claim 7, wherein the M sealing rings further comprise a second sealing ring, the second sealing ring is in a complete closed shape, and the second sealing ring is used as a sealing ring corresponding to a device to be packaged with the highest packaging priority.
9. The packaging device of the wafer level multi-level vacuum environment according to claim 7 or 8, wherein the M microcavity structures to be packaged sequentially perform packaging operations according to a sequence from high to low of packaging priorities corresponding to devices to be packaged in the M microcavity structures to be packaged;
wherein, for the current microcavity structure to be packaged in which the packaging operation is currently performed in the M microcavity structures to be packaged, the performing the packaging operation includes: and packaging the current microcavity structure to be packaged based on the bonding pressure and the bonding temperature corresponding to the current sealing ring of the current microcavity structure to be packaged.
10. A non-transitory computer readable storage medium having stored thereon a computer program, which when executed by a processor, implements a method of packaging a wafer level multi-level vacuum environment according to any of claims 1 to 6.
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