CN116413991A - Optical proximity correction method - Google Patents

Optical proximity correction method Download PDF

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Publication number
CN116413991A
CN116413991A CN202111675780.6A CN202111675780A CN116413991A CN 116413991 A CN116413991 A CN 116413991A CN 202111675780 A CN202111675780 A CN 202111675780A CN 116413991 A CN116413991 A CN 116413991A
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China
Prior art keywords
edge
center distance
pattern
detection
region
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游林
严中稳
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
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Priority to CN202111675780.6A priority Critical patent/CN116413991A/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]

Abstract

An optical proximity correction method, comprising: providing an initial layout, wherein the initial layout comprises a first dense region, a first junction region, a sparse region, a second junction region and a second dense region which are arranged along a first direction, the first dense region is internally provided with a plurality of first patterns which are parallel to a second direction and are arranged along the first direction, the first junction region is internally provided with a first edge pattern, the second dense region is internally provided with a plurality of second patterns which are parallel to the second direction and are arranged along the first direction, and the second junction region is internally provided with a second edge pattern; acquiring environment information of a first edge graph and a second edge graph; according to the environmental information. By the optical proximity correction method, the number, the positions and the sizes of the auxiliary patterns formed in the sparse zone can be determined according to the environments of the first edge pattern and the second edge pattern under each condition in a targeted manner, so that the effect of final optical proximity correction is improved.

Description

Optical proximity correction method
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to an optical proximity correction method.
Background
Photolithography is a critical technique in semiconductor fabrication that enables transferring patterns from a reticle to a wafer surface to form a semiconductor product that meets design requirements. The photolithography process includes an exposure step, a development step performed after the exposure step, and an etching step after the development step. In the exposure step, light irradiates the silicon wafer coated with the photoresist through a light-transmitting area in the mask plate, and the photoresist is subjected to chemical reaction under the irradiation of the light; in the development step, a photoetching pattern is formed by utilizing the difference of the dissolution degree of photosensitive photoresist and non-photosensitive photoresist to the developer, so that the mask pattern is transferred to the photoresist; in the etching step, the silicon wafer is etched based on the photoetching pattern formed by the photoresist layer, and the pattern of the mask plate is further transferred to the silicon wafer.
In semiconductor manufacturing, as the design size is continuously reduced, the design size is more and more close to the limit of a photoetching imaging system, the diffraction effect of light becomes more and more obvious, optical image degradation is finally generated on a design pattern, the actually formed photoetching pattern is severely distorted relative to the pattern on a mask plate, and finally the actual pattern formed by photoetching on a silicon wafer is different from the design pattern, and the phenomenon is called optical proximity effect (OPE: optical Proximity Effect).
In order to correct the optical proximity effect, an optical proximity correction (OPC: optical Proximity Correction) is generated. The core idea of the optical proximity correction is to build an optical proximity correction model based on the consideration of canceling the optical proximity effect, and design a photomask pattern according to the optical proximity correction model, so that although the optical proximity effect occurs in the lithographic pattern corresponding to the photomask pattern, since the cancellation of the phenomenon has been considered when designing the photomask pattern according to the optical proximity correction model, the lithographic pattern after lithography is close to the target pattern that the user actually wants.
However, there are still a number of problems associated with the optical proximity correction of the prior art.
Disclosure of Invention
The invention solves the technical problem of providing an optical proximity correction method which can effectively improve the final optical proximity correction effect.
In order to solve the above problems, the technical solution of the present invention provides an optical proximity correction method, including: providing an initial layout, wherein the initial layout comprises a first dense region, a first junction region, a sparse region, a second junction region and a second dense region which are arranged along a first direction, the first junction region is positioned between the first dense region and the sparse region, the second junction region is positioned between the second dense region and the sparse region, the sparse region is positioned between the first junction region and the second junction region, a plurality of first patterns which are parallel to a second direction and are arranged along the first direction are arranged in the first dense region, the first direction is perpendicular to the second direction, a first edge pattern is arranged in the first junction region, a plurality of second patterns which are parallel to the second direction and are arranged along the first direction are arranged in the second dense region, and a second edge pattern is arranged in the second junction region; acquiring environment information of the first edge graph and the second edge graph; and determining the number, the position and the size of the auxiliary patterns formed in the sparse zone according to the environment information.
Optionally, a first center distance p1 is provided between the adjacent first patterns, a second center distance p2 is provided between the adjacent second patterns, and the first center distance p1 and the second center distance p2 are equal; the first pattern has a first width dimension w1 and the second pattern has a second width dimension w2; the first width dimension w1 and the second width dimension w2 are equal; the first edge pattern has a first length dimension L1; the second edge pattern has a first length dimension L2.
Optionally, the environmental information includes: an edge center distance D1 between the first edge pattern and the second edge pattern; the projection length Len of the first edge graph on the second edge graph; the first environment detection data are used for recording whether surrounding graphics exist in a preset area range in the second direction or the third direction by taking the edge of the first edge graph as a starting point, and the second environment detection data are used for recording whether surrounding graphics exist in a preset area range in the second direction or the third direction by taking the edge of the second edge graph as a starting point.
Optionally, the plurality of first environment detection data includes: first detection data C1 (T), second detection data C2 (T), third detection data C1 (B), and fourth detection data C2 (B), wherein the first detection data C1 (T) is acquired by detecting in the second direction at the top of the first edge pattern at a detection length of 1 times the first center distance p1 according to a euclidean detection method; the second detection data C2 (T) are obtained by detecting in the second direction at the top of the first edge graph at a detection length which is 2 times of the first center distance p1 according to a Euclidean detection method; the third detection data C1 (B) are obtained by detecting in the third direction at the bottom of the first edge graph at a detection length which is 1 time of the first center distance p1 according to a Euclidean detection method; the fourth detection data C2 (B) is obtained by detecting in the third direction at the bottom of the first edge pattern with a detection length of 2 times the first center distance p1 according to the euclidean detection method; the plurality of second environment detection data comprises: fifth detection data C1 (T) ', sixth detection data C2 (T) ', seventh detection data C1 (B) ' and eighth detection data C2 (B) ', wherein the fifth detection data C1 (T) ' are acquired by detection according to a euclidean detection method at a detection length of the second center distance p2 of 1 time toward the second direction at the top of the second edge pattern; the sixth detection data C2 (T)' is obtained by detecting in the second direction at the top of the second edge pattern with a detection length of 2 times the second center distance p2 according to the euclidean detection method; the seventh detection data C1 (B)' is obtained by detecting in the third direction at the bottom of the second edge pattern with a detection length of 1 time of the second center distance p2 according to the euclidean detection method; the eighth detection data C2 (B)' is obtained by detecting in the third direction at the bottom of the second edge pattern with a detection length of 2 times the second center distance p2 according to the euclidean detection method.
Optionally, the method for determining the number of auxiliary graphics formed in the sparse region according to the environmental information includes: when the projection length Len is less than or equal to 0, the number of auxiliary patterns formed in the sparse region is 2; when the projection length Len is greater than 0 and the edge center distance D1 is smaller than the first center distance p1 which is 2 times, the number of auxiliary patterns formed in the sparse region is 0; when the projection length Len is greater than 0 and the edge center-to-center distance D1 is greater than 2 times the first center-to-center distance p1, the number of auxiliary patterns formed in the sparse region is int (D1/p 1) -1.
Optionally, the method for determining the position of the auxiliary graph formed in the sparse region according to the environmental information includes: when the projection length Len is less than or equal to 0, one of the 2 auxiliary patterns and the first edge pattern are arranged along the first direction, the first center distance p1 of which the center distance between the one of the 2 auxiliary patterns and the first edge pattern is 1 times, the second center distance p2 of which the center distance between the other of the 2 auxiliary patterns and the second edge pattern is 1 times, and the second center distance p2 of which the center distance between the other of the 2 auxiliary patterns and the second edge pattern is 1 times; when the projection length Len is greater than 0 and the edge center distance D1 is greater than 2 times the first center distance p1, the centers of the auxiliary patterns and the projection length Len are located on a straight line parallel to the first direction, and the center distances between the adjacent auxiliary patterns, the center distances between the adjacent auxiliary patterns and the first edge patterns, and the center distances between the adjacent auxiliary patterns and the second edge patterns are equal.
Optionally, the dimensions of the auxiliary graph include: a length dimension and a width dimension.
Optionally, the method for determining the length dimension of the auxiliary graph formed in the sparse region according to the environmental information includes: when the projection length Len is less than or equal to 0, the length dimension of the auxiliary pattern arranged along the first direction with the first edge pattern is equal to the first length dimension L1, and the length dimension of the auxiliary pattern arranged along the first direction with the second edge pattern is equal to the second length dimension L2; when the projection length Len is greater than 0 and the edge center distance D1 is greater than 2 times the first center distance p1, the length dimension of the auxiliary pattern is as follows: min { f (LAE), f (RAE) }, wherein:
f(LAE)＝{C1(T)+(1-|C1(T)|*C2(T))}*Len-{C1(B)+(1-|C1(B)|*C2(B))}*Len+Len；
f(RAE)＝{C1(T)’+(1-|C1(T)’|*C2(T)’)}*Len-{C1(B)’+(1-|C1(B)’|*
C2(B)’)}*Len+Len。
optionally, the width dimension of the auxiliary pattern is equal to the first width dimension w1.
Compared with the prior art, the technical scheme of the invention has the following advantages:
in the optical proximity correction method of the technical scheme of the invention, the environmental information of the first edge graph and the second edge graph is obtained; and determining the number, the position and the size of the auxiliary patterns formed in the sparse zone according to the environment information. The number, the position and the size of the auxiliary patterns formed in the sparse zone can be determined pertinently according to the environments of the first edge pattern and the second edge pattern under each condition, so that the effect of final optical proximity correction is improved.
Drawings
FIG. 1 is a schematic diagram of an optical proximity corrected pattern layout;
FIG. 2 is a flow chart of an optical proximity correction method according to an embodiment of the present invention;
fig. 3 to 11 are schematic structural diagrams illustrating steps of an optical proximity correction method according to an embodiment of the invention.
Detailed Description
As described in the background, there are still many problems in the optical proximity correction in the prior art. The following will make a detailed description with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of an optical proximity corrected pattern layout.
Referring to fig. 1, an initial layout is provided, wherein the initial layout includes a first dense region A1, a first junction region B1, a sparse region C, a second junction region B2 and a second dense region A2 arranged along a first direction X, the first junction region B1 is located between the first dense region A1 and the sparse region C, the second junction region B2 is located between the second dense region A2 and the sparse region C, the sparse region C is located between the first junction region B1 and the second junction region B2, the first dense region A1 has a plurality of first patterns 101 arranged parallel to a second direction Y and along the first direction X, the first direction X is perpendicular to the second direction Y, the first junction region B1 has a first edge pattern 100 therein, the second junction region A2 has a plurality of second edge patterns 102 arranged parallel to the second direction Y and along the first direction X therein.
Since the environmental differences between the first edge pattern 100 and the first pattern 101, and between the second edge pattern 102 and the second pattern 103 are large, when optical proximity correction is adopted, the first edge pattern 100 is easily moved in the directions of a plurality of first patterns 101, and the second edge pattern 102 is easily moved in the directions of a plurality of second patterns 103, so that shorting between device structures formed later is easily caused.
In the prior art, the method for solving the problems is as follows: and adding a plurality of auxiliary patterns in the edge area of the wafer to reduce the environmental difference between the first edge pattern 100 and the first patterns 101 and between the second edge pattern 102 and the second patterns 103, thereby improving the effect of optical proximity correction. However, since the different first edge pattern 100 and the second edge pattern 102 are located in environments having large differences, the problem of movement of the first edge pattern 100 and the second edge pattern 102 in all cases cannot be solved by adding auxiliary patterns in batches.
On the basis, the invention provides an optical proximity correction method, which is used for acquiring the environmental information of the first edge graph and the second edge graph; and determining the number, the position and the size of the auxiliary patterns formed in the sparse zone according to the environment information. The number, the position and the size of the auxiliary patterns formed in the sparse zone can be determined pertinently according to the environments of the first edge pattern and the second edge pattern under each condition, so that the effect of final optical proximity correction is improved.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention briefly described above will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings.
FIG. 2 is a flowchart of an optical proximity correction method according to an embodiment of the present invention, including:
step S101, providing an initial layout, wherein the initial layout comprises a first dense region, a first junction region, a sparse region, a second junction region and a second dense region which are arranged along a first direction, the first junction region is positioned between the first dense region and the sparse region, the second junction region is positioned between the second dense region and the sparse region, the sparse region is positioned between the first junction region and the second junction region, a plurality of first patterns which are parallel to a second direction and are arranged along the first direction are arranged in the first dense region, the first direction is perpendicular to the second direction, a first edge pattern is arranged in the first junction region, a plurality of second patterns which are parallel to the second direction and are arranged along the first direction are arranged in the second dense region, and a second edge pattern is arranged in the second junction region;
step S102, acquiring environment information of the first edge graph and the second edge graph;
step S103, determining the number, the position and the size of the auxiliary graphics formed in the sparse zone according to the environment information.
The steps of the optical proximity correction method are described in detail below with reference to the accompanying drawings.
Fig. 3 to 11 are schematic structural diagrams illustrating steps of an optical proximity correction method according to an embodiment of the invention.
Referring to fig. 3, an initial layout is provided, where the initial layout includes a first dense region A1, a first junction region B1, a sparse region C, a second junction region B2, and a second dense region A2 arranged along a first direction, the first junction region B1 is located between the first dense region A1 and the sparse region C, the second junction region B2 is located between the second dense region A2 and the sparse region C, the sparse region C is located between the first junction region B1 and the second junction region B2, the first dense region A1 has a plurality of first patterns 201 arranged parallel to a second direction Y and along the first direction X, the first direction X is perpendicular to the second direction Y, the first junction region B1 has a first edge pattern 200 therein, the second junction region A2 has a plurality of second patterns 203 therein arranged parallel to the second direction Y and along the first direction X, and the second junction region B2 has a plurality of second edge patterns 202 therein.
In this embodiment, a first center distance p1 is provided between adjacent first patterns, a second center distance p2 is provided between adjacent second patterns, and the first center distance p1 and the second center distance p2 are equal; the first pattern has a first width dimension w1 and the second pattern has a second width dimension w2; the first width dimension w1 and the second width dimension w2 are equal; the first edge pattern has a first length dimension L1; the second edge pattern has a first length dimension L2.
In this embodiment, the first length dimension L1 of the first edge pattern 200 is equal to the length dimension of the first pattern 201; the second length dimension L2 of the second edge pattern 202 is equal to the length dimension of the second pattern 203.
Referring to fig. 4, environmental information of the first edge graph 200 and the second edge graph 202 is acquired.
In this embodiment, the environment information includes: an edge center-to-center distance D1 between the first edge pattern 200 and the second edge pattern 202; a projected length Len of the first edge pattern 200 on the second edge pattern 202; the first environmental detection data of the first edge pattern 200 are used for recording whether a surrounding pattern exists in a preset area range of the second direction Y or the third direction Y 'with an edge of the first edge pattern 200 as a starting point, and the second environmental detection data of the second edge pattern 202 are used for recording whether a surrounding pattern exists in a preset area range of the second direction Y or the third direction Y' with an edge of the second edge pattern 202 as a starting point.
In this embodiment, the plurality of first environment detection data includes: first detection data C1 (T), second detection data C2 (T), third detection data C1 (B), and fourth detection data C2 (B), wherein the first detection data C1 (T) is acquired by detecting in the second direction Y at the top of the first edge pattern 200 according to a euclidean detection method with a detection length of 1 times the first center distance p 1; the second detection data C2 (T) are obtained by detecting in the second direction Y at the top of the first edge pattern 200 according to the euclidean detection method with a detection length of 2 times the first center distance p 1; the third detection data C1 (B) is obtained by detecting the third direction Y' at the bottom of the first edge pattern 200 according to the euclidean detection method with a detection length of 1 time the first center distance p 1; the fourth detection data C2 (B) is obtained by detecting the third direction Y' at the bottom of the first edge pattern 200 according to the euclidean detection method with a detection length of 2 times the first center distance p 1; the plurality of second environment detection data comprises: fifth detection data C1 (T) ', sixth detection data C2 (T) ', seventh detection data C1 (B) ' and eighth detection data C2 (B) ', wherein the fifth detection data C1 (T) ' are acquired by detection according to a euclidean detection method at a detection length of the second center distance p2 of 1 time toward the second direction Y at the top of the second edge pattern 202; the sixth detection data C2 (T)' is obtained by detecting in the second direction Y at the top of the second edge pattern 202 with a detection length of 2 times the second center distance p2 according to the euclidean detection method; the seventh detection data C1 (B) 'is obtained by detecting the third direction Y' at the bottom of the second edge pattern 202 with a detection length of 1 time of the second center distance p2 according to the euclidean detection method; the eighth detection data C2 (B) 'is obtained by detecting the third direction Y' at the bottom of the second edge pattern 202 with a detection length of 2 times the second center distance p2 according to the euclidean detection method.
In this embodiment, the first probe data C1 (T), the third probe data C1 (B), the fifth probe data C1 (T) 'and the seventh probe data C1 (B)' are specific probe data under a C1 () function, where the C1 () function is one of Count () functions, and the physical meaning thereof is: the upper and lower sides of the array edge pattern at the ISO spacing are set to a detection length of 1 time center to detect the surrounding pattern upward and downward in euclidean manner. The undetected surrounding pattern is marked 0, the upward (i.e., 0 deg. -180 deg.) is marked 1, and the downward (i.e., 180 deg. -360 deg.) is marked-1. Thus, the C1 () function has only 3 values, 0, 1 and-1. The definition of the detection length with the center distance of 2 times is abbreviated as C2 () function. C2 The data specifically obtained by the function are: the second probe data C2 (T), the fourth probe data C2 (B), the sixth probe data C2 (T) 'and the eighth probe data C2 (B)'.
In this embodiment, the upward direction is the second direction Y, and the downward direction is the third direction Y'.
After acquiring the environmental information of the first edge graph 200 and the second edge graph 202, the method further includes: the number, position and size of the auxiliary patterns formed in the sparse zone C are determined according to the environmental information. For specific processes, please refer to fig. 5 to fig. 11.
Referring to fig. 5, the method of determining the number of auxiliary patterns 300 formed in the sparse region C according to the environment information includes: when the projection length Len is less than or equal to 0, the number of auxiliary patterns 300 formed in the sparse region C is 2.
In this embodiment, the projection length Len is less than or equal to 0, that is, the projections of the first edge pattern 200 and the second edge pattern 202 are in a completely staggered positional relationship, and in this case, one auxiliary pattern 300 needs to be formed beside the first edge pattern 200 and beside the second edge pattern 202, that is, the number of auxiliary patterns 300 formed in the sparse region C is 2.
Referring to fig. 6, when the projection length Len is greater than 0 and the edge center distance D1 is smaller than 2 times the first center distance p1, the number of auxiliary patterns 300 formed in the sparse region C is 0.
In this embodiment, the projection length Len is greater than 0, that is, there is an overlapping portion between the projections of the first edge pattern 200 and the second edge pattern 202, and if the edge center distance D1 is smaller than 2 times the first center distance p1, then the distance between the first edge pattern 200 and the second edge pattern 202 is considered to be closer, and the auxiliary pattern 300 does not need to be formed in the sparse area C, that is, the number of auxiliary patterns 300 formed in the sparse area C is 0.
Referring to fig. 7, when the projection length Len is greater than 0 and the edge center distance D1 is greater than 2 times the first center distance p1, the number of auxiliary patterns 300 formed in the sparse region C is int (D1/p 1) -1.
In this embodiment, when there is an overlapping portion in the projection between the first edge pattern 200 and the second edge pattern 202, and when the edge center distance D1 is greater than 2 times the first center distance p1, the distance between the first edge pattern 200 and the second edge pattern 202 is considered to be larger, and at this time, it is necessary to form the auxiliary pattern 300 in the sparse region C, the number of the auxiliary patterns 300 to be formed is specifically referred to as a multiple relationship between the edge center distance D1 and the first center distance p1, that is, the number of the auxiliary patterns 300 to be formed in the sparse region C is int (D1/p 1) -1, where the int () function is a downward rounding function.
Referring to fig. 8 on the basis of fig. 5, the method of determining the position of the auxiliary pattern 300 formed in the sparse zone C according to the environment information includes: when the projection length Len is less than or equal to 0, one of the 2 auxiliary patterns 300 is arranged along the first direction X with the first center distance p1 between the other of the 2 auxiliary patterns 300 and the first edge pattern 200 being 1 times, the other of the 2 auxiliary patterns 300 is arranged along the first direction X with the second edge pattern 202 being 1 times, and the other of the 2 auxiliary patterns 300 is arranged along the second direction X with the second center distance p2 being 1 times.
In this embodiment, the first center distance p1 of the auxiliary pattern 300 and the first edge pattern 200 is 1 times the center distance, so that the center distance between the auxiliary pattern 300 and the first edge pattern 200 is kept equal to the center distance between the adjacent first patterns 201. Accordingly, the second center distance p2, which is 1 time the center distance between the auxiliary pattern 300 and the second edge pattern 202, makes the center distance between the auxiliary pattern 300 and the second edge pattern 202 equal to the center distance between the adjacent second patterns 203.
Referring to fig. 9 on the basis of fig. 7, when the projection length Len is greater than 0 and the edge center distance D1 is greater than 2 times the first center distance p1, the center of the auxiliary pattern 300 and the center of the projection length Len are located on a straight line S parallel to the first direction X, and the center distances between adjacent auxiliary patterns 300, the center distances between adjacent auxiliary patterns 300 and the first edge pattern 200, and the center distances between adjacent auxiliary patterns 300 and the second edge pattern 202 are equal.
In the present embodiment, the center of the auxiliary pattern 300 and the center of the projection length Len are located on a straight line S parallel to the first direction X and the center distance between adjacent auxiliary patterns 300, the center distance between adjacent auxiliary patterns 300 and the first edge pattern 200, and the center distance between adjacent auxiliary patterns 300 and the second edge pattern 202 are equal for the purpose of: the added auxiliary pattern 300 is not biased to any one of the first edge pattern 200 and the second edge pattern 202 in the first direction X, the second direction Y and the third direction Y', so as to ensure the uniformity of the arrangement of the added auxiliary pattern 300, thereby improving the final optical proximity correction effect.
In this embodiment, the dimensions of the auxiliary graph 300 include: a length dimension and a width dimension.
Referring to fig. 10 on the basis of fig. 8, the method of determining the length dimension of the auxiliary pattern 300 formed in the sparse zone C according to the environmental information includes: when the projection length Len is less than or equal to 0, the length dimension of the auxiliary pattern 300 arranged along the first direction X with the first edge pattern 200 is equal to the first length dimension L1, and the length dimension of the auxiliary pattern 300 arranged along the first direction X with the second edge pattern 202 is equal to the second length dimension L2.
In this embodiment, the added 2 auxiliary patterns 300 are equal to the corresponding first length dimension L1 of the first edge pattern 200 and the corresponding second length dimension L2 of the second edge pattern 202, so that the uniformity of overall pattern arrangement can be ensured, and the final optical proximity correction effect can be further improved.
Referring to fig. 11 on the basis of fig. 9, when the projection length Len is greater than 0 and the edge center distance D1 is greater than 2 times the first center distance p1, the length dimension of the auxiliary pattern 300 is as follows: min { f (LAE), f (RAE) }, wherein:
f(LAE)＝{C1(T)+(1-|C1(T)|*C2(T))}*Len-{C1(B)+(1-|C1(B)|*C2(B))}*Len+Len；
f(RAE)＝{C1(T)’+(1-|C1(T)’|*C2(T)’)}*Len-{C1(B)’+(1-|C1(B)’|*
C2(B)’)}*Len+Len。
since the probability that the fifth probe data C1 (T) 'and the first probe data C1 (T), the sixth probe data C2 (T)' and the second probe data C2 (T), the seventh probe data C1 (B) 'and the third probe data C1 (B), and the eighth probe data C2 (B)' and the fourth probe data C2 (B) are simultaneously guaranteed to be equal is small, the probability that the results between f (LAE) and f (RAE) are equal is also small.
With continued reference to fig. 10 and 11, the width dimension of the auxiliary pattern 300 is equal to the first width dimension w1.
In this embodiment, the environmental information of the first edge graph 200 and the second edge graph 202 is acquired; the number, position, and size of the auxiliary patterns 300 formed in the sparse zone C are determined according to the environment information. The number, position and size of the auxiliary patterns 300 formed in the sparse zone C can be determined in a targeted manner according to the environments in which the first edge pattern 200 and the second edge pattern 202 are located in each case, so as to promote the effect of the final optical proximity correction.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.

Claims (9)

1. An optical proximity correction method, comprising:
providing an initial layout, wherein the initial layout comprises a first dense region, a first junction region, a sparse region, a second junction region and a second dense region which are arranged along a first direction, the first junction region is positioned between the first dense region and the sparse region, the second junction region is positioned between the second dense region and the sparse region, the sparse region is positioned between the first junction region and the second junction region, a plurality of first patterns which are parallel to a second direction and are arranged along the first direction are arranged in the first dense region, the first direction is perpendicular to the second direction, a first edge pattern is arranged in the first junction region, a plurality of second patterns which are parallel to the second direction and are arranged along the first direction are arranged in the second dense region, and a second edge pattern is arranged in the second junction region;
acquiring environment information of the first edge graph and the second edge graph;
and determining the number, the position and the size of the auxiliary patterns formed in the sparse zone according to the environment information.
2. The optical proximity correction method as set forth in claim 1, wherein a first center distance p1 is provided between adjacent first patterns, a second center distance p2 is provided between adjacent second patterns, and the first center distance p1 and the second center distance p2 are equal; the first pattern has a first width dimension w1 and the second pattern has a second width dimension w2; the first width dimension w1 and the second width dimension w2 are equal; the first edge pattern has a first length dimension L1; the second edge pattern has a first length dimension L2.
3. The optical proximity correction method of claim 2, wherein the environmental information includes: an edge center distance D1 between the first edge pattern and the second edge pattern; the projection length Len of the first edge graph on the second edge graph; the first environment detection data are used for recording whether surrounding graphics exist in a preset area range in the second direction or the third direction by taking the edge of the first edge graph as a starting point, and the second environment detection data are used for recording whether surrounding graphics exist in a preset area range in the second direction or the third direction by taking the edge of the second edge graph as a starting point.
4. The optical proximity correction method of claim 3 wherein the plurality of first environmental detection data includes: first detection data C1 (T), second detection data C2 (T), third detection data C1 (B), and fourth detection data C2 (B), wherein the first detection data C1 (T) is acquired by detecting in the second direction at the top of the first edge pattern at a detection length of 1 times the first center distance p1 according to a euclidean detection method; the second detection data C2 (T) are obtained by detecting in the second direction at the top of the first edge graph at a detection length which is 2 times of the first center distance p1 according to a Euclidean detection method; the third detection data C1 (B) are obtained by detecting in the third direction at the bottom of the first edge graph at a detection length which is 1 time of the first center distance p1 according to a Euclidean detection method; the fourth detection data C2 (B) is obtained by detecting in the third direction at the bottom of the first edge pattern with a detection length of 2 times the first center distance p1 according to the euclidean detection method; the plurality of second environment detection data comprises: fifth detection data C1 (T) ', sixth detection data C2 (T) ', seventh detection data C1 (B) ' and eighth detection data C2 (B) ', wherein the fifth detection data C1 (T) ' are acquired by detection according to a euclidean detection method at a detection length of the second center distance p2 of 1 time toward the second direction at the top of the second edge pattern; the sixth detection data C2 (T)' is obtained by detecting in the second direction at the top of the second edge pattern with a detection length of 2 times the second center distance p2 according to the euclidean detection method; the seventh detection data C1 (B)' is obtained by detecting in the third direction at the bottom of the second edge pattern with a detection length of 1 time of the second center distance p2 according to the euclidean detection method; the eighth detection data C2 (B)' is obtained by detecting in the third direction at the bottom of the second edge pattern with a detection length of 2 times the second center distance p2 according to the euclidean detection method.
5. The optical proximity correction method of claim 4, wherein the method of determining the number of auxiliary patterns formed in the sparse zone based on the environmental information comprises: when the projection length Len is less than or equal to 0, the number of auxiliary patterns formed in the sparse region is 2; when the projection length Len is greater than 0 and the edge center distance D1 is smaller than the first center distance p1 which is 2 times, the number of auxiliary patterns formed in the sparse region is 0; when the projection length Len is greater than 0 and the edge center-to-center distance D1 is greater than 2 times the first center-to-center distance p1, the number of auxiliary patterns formed in the sparse region is int (D1/p 1) -1.
6. The optical proximity correction method according to claim 5, wherein the method of determining the position of the auxiliary pattern formed in the sparse zone based on the environmental information comprises: when the projection length Len is less than or equal to 0, one of the 2 auxiliary patterns and the first edge pattern are arranged along the first direction, the first center distance p1 of which the center distance between the one of the 2 auxiliary patterns and the first edge pattern is 1 times, the second center distance p2 of which the center distance between the other of the 2 auxiliary patterns and the second edge pattern is 1 times, and the second center distance p2 of which the center distance between the other of the 2 auxiliary patterns and the second edge pattern is 1 times; when the projection length Len is greater than 0 and the edge center distance D1 is greater than 2 times the first center distance p1, the centers of the auxiliary patterns and the projection length Len are located on a straight line parallel to the first direction, and the center distances between the adjacent auxiliary patterns, the center distances between the adjacent auxiliary patterns and the first edge patterns, and the center distances between the adjacent auxiliary patterns and the second edge patterns are equal.
7. The optical proximity correction method of claim 6 wherein the dimensions of the auxiliary pattern include: a length dimension and a width dimension.
8. The optical proximity correction method of claim 7, wherein the method of determining the length dimension of the auxiliary pattern formed in the sparse zone based on the environmental information comprises: when the projection length Len is less than or equal to 0, the length dimension of the auxiliary pattern arranged along the first direction with the first edge pattern is equal to the first length dimension L1, and the length dimension of the auxiliary pattern arranged along the first direction with the second edge pattern is equal to the second length dimension L2; when the projection length Len is greater than 0 and the edge center distance D1 is greater than 2 times the first center distance p1, the length dimension of the auxiliary pattern is as follows: min { f (LAE), f (RAE) }, wherein:
f(LAE)＝{C1(T)+(1-|C1(T)|*C2(T))}*Len-{C1(B)+(1-|C1(B)|*C2(B))}*Len+Len；
f(RAE)＝(C1(T)’+(1-|C1(T)’|*C2(T)’)}*Len-{C1(B)’+(1-|C1(B)’|*C2(B)’)}*Len+Len。
9. the optical proximity correction method as claimed in claim 7, wherein a width dimension of the auxiliary pattern is equal to the first width dimension w1.
CN202111675780.6A 2021-12-31 2021-12-31 Optical proximity correction method Pending CN116413991A (en)

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