CN1164126A - Method for welding semiconductor shell on supporting board - Google Patents
Method for welding semiconductor shell on supporting board Download PDFInfo
- Publication number
- CN1164126A CN1164126A CN97102389A CN97102389A CN1164126A CN 1164126 A CN1164126 A CN 1164126A CN 97102389 A CN97102389 A CN 97102389A CN 97102389 A CN97102389 A CN 97102389A CN 1164126 A CN1164126 A CN 1164126A
- Authority
- CN
- China
- Prior art keywords
- nickel
- welding
- semiconductor shell
- silicon
- supporting plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
Landscapes
- Die Bonding (AREA)
Abstract
Back surface of a semiconductor shell (1) joints with a metal supporting board via a metal layer sequence containing nickel layer (5), the thickness of the nickel layer barely reduce in following ways, certain percent nickel is mixed into the jointing material, and the solubility of nickel in the jointing material is determined by general jointing temperature (250 DEG C to 400 DEG C).
Description
The present invention relates to the semiconductor shell that a kind of silicon is formed is welded on method on the metallic support plate, wherein on the metal semiconductor shell, contain metal layer sequence.Before welding, set out by silicon and to contain a nickel dam and a silver layer on the supporting plate direction, and between silver layer and supporting plate, have welding material.With this, semiconductor shell and supporting plate weld together.Many semiconductor components, especially the power semiconductor member can be welded on when assembling on the metallic support plate.
As shown in drawings, metal layer sequence comprises that one deck is positioned at the aluminium lamination on the Si semiconductor shell.This aluminium lamination sticks on the silicon well, and especially the silicon with the P doping constitutes a desirable ohmic contact.Be a backside barrier layer, constitute that it makes and increases attached dose and diffusion barrier between the nickel dam and aluminium lamination on the backside barrier layer by titanium or chromium on this aluminium lamination.According to prior art, on nickel dam, have a silver layer that is used for oxidation protection.
With general known welding method, between the semiconductor shell back side of having metallized and metallic support plate 2, put into the welding thin slice of mainly forming according to prior art then by tin.Be heated to about 250 ℃ by the temperature to the first half and just can realize being welded to connect, this connection forms between scolder (tin) and nickel in known manner.In welding for the previous period, the solder layer fusing between the silver layer of supporting plate and semiconductor shell, so silver layer is dissolved and nickel dam subsequently is loosening from applied welding material.
Yet this nickel dam is loosening by proving very disadvantageous at the used tin of welding leading portion.Because the different temperature expansion coefficient of nickel and silicon-semiconductor shell, thick nickel dam can cause strong bending, causes sheet processing, the wrong and higher danger that fractures in housing location of difficulty again.For thin nickel dam, nickel dam can be dissolved in the welding material fully and therefore total welding result insecure, that is to say that for example the Si semiconductor shell comes off or scolder enters into the semiconductor shell from the metallic support plate.
The task of foregoing invention is, improves the described welding method of beginning, can reduce applied nickel layer thickness widely, and this nickel dam can not be dissolved in the scolder fully.
According to this task of the present invention can be following method solve, it is characterized in that mix the nickel of certain percentage in welding material, nickel mixes that this percentage in the welding material is corresponding to depend on common welding temperature.
Favourable mode is that application tin then mixes 0.5～5% nickel as welding material.Wherein, the composition of nickel is about 1% especially suitable, because nickel that only might about 1% when general welding temperature (250 ℃ to 400 ℃) is dissolved by tin.
Metal layer sequence before the welding shown in the drawings.This metal layer sequence contains an aluminium lamination 3, and it is positioned on one silicon-semiconductor shell 1, and this aluminium lamination sticks on the silicon well and the silicon that especially mixes with P constitutes desirable ohmic contact.Be a titanium layer 4 on this aluminium lamination, it is as increasing attached dose and diffusion barrier between nickel dam on the titanium layer 45 and aluminium lamination 3.Directly have a silver layer 6 on nickel dam 5, it is used for the oxidation protection of nickel dam.But also can have one as the thin titanium layer (not illustrating) that increases attached dose between silver layer and nickel dam, it can avoid the dissolving of silver layer.When the welding leading portion, the welding material fusing between the silver layer 6 of supporting plate 2 and semiconductor shell, tin herein contains 1% nickel composition, and silver layer is dissolved.Nickel dam 5 subsequently has only dissolved rarely then.Because according to the state diagram of tin/nickel, 1% the nickel of only having an appointment when general welding temperature (250 ℃ to 400 ℃) can be dissolved by tin and described tin reaches capacity by nickel component of the present invention.And therefore can set up with the thin nickel dam (less than 400nm) of common method and well to be welded to connect at the dorsal part of chip.Described sequence of layer can reach a kind of stable machinery and electrically contact.
The present invention no doubt can be described as having the contact of one deck sequence A l/Ti/Ni/Ag, and nature can also be used for available sequence of layer, contains other a metal level and/or other a oxide protective layer between nickel dam 5 and semiconductor shell 1.Basic principle is, uses a nickeliferous welding material when welding, so described nickel dam is not or have only dissolved very slightly with respect to prior art.
Claims (4)
1. go up the method for welding the semiconductor shell of forming by silicon (1) at a metallic support plate (2), wherein on the semiconductor shell, have a metal layer sequence, before welding, contain a nickel dam (5) and a silver layer (6) from silicon to the supporting plate direction, and between silver layer and supporting plate, contain a welding material (7), be welded together with this semiconductor shell and supporting plate, it is characterized in that, mix the nickel of certain percentage composition in welding material, the solubility of nickel in welding material depends on common welding temperature.
2. according to the method for claim 1, it is characterized in that tin has 0.5% to about 5% nickel composition as welding material.
3. according to the method for claim 2, it is characterized in that the component of nickel accounts for 1%.
4. in order to implement the method for claim 1 to 3, the semiconductor shell of being made up of silicon (1) can weld together by a metal layer sequence with a metallic support plate (2), before welding, contain a nickel dam (5) and a silver layer (6) on the direction from silicon to the supporting plate, it is characterized in that the thickness of nickel dam (5) is less than 400nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97102389A CN1164126A (en) | 1996-02-01 | 1997-01-31 | Method for welding semiconductor shell on supporting board |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19603654.2 | 1996-02-01 | ||
| CN97102389A CN1164126A (en) | 1996-02-01 | 1997-01-31 | Method for welding semiconductor shell on supporting board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1164126A true CN1164126A (en) | 1997-11-05 |
Family
ID=5166271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN97102389A Pending CN1164126A (en) | 1996-02-01 | 1997-01-31 | Method for welding semiconductor shell on supporting board |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1164126A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101950737A (en) * | 2009-11-23 | 2011-01-19 | 杭州士兰集成电路有限公司 | Production method of P-type silicon substrate back metallization |
-
1997
- 1997-01-31 CN CN97102389A patent/CN1164126A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101950737A (en) * | 2009-11-23 | 2011-01-19 | 杭州士兰集成电路有限公司 | Production method of P-type silicon substrate back metallization |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |