CN116387301A - High-adhesion-performance thin film circuit on aluminum nitride substrate and manufacturing method thereof - Google Patents
High-adhesion-performance thin film circuit on aluminum nitride substrate and manufacturing method thereof Download PDFInfo
- Publication number
- CN116387301A CN116387301A CN202310203928.9A CN202310203928A CN116387301A CN 116387301 A CN116387301 A CN 116387301A CN 202310203928 A CN202310203928 A CN 202310203928A CN 116387301 A CN116387301 A CN 116387301A
- Authority
- CN
- China
- Prior art keywords
- aluminum nitride
- nitride substrate
- film circuit
- thin film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 106
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 91
- 239000010409 thin film Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 59
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 36
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000002131 composite material Substances 0.000 claims abstract description 23
- 238000000151 deposition Methods 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims abstract description 18
- 239000000853 adhesive Substances 0.000 claims abstract description 13
- 230000001070 adhesive effect Effects 0.000 claims abstract description 13
- 238000000137 annealing Methods 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 230000008719 thickening Effects 0.000 claims abstract description 7
- 238000011161 development Methods 0.000 claims abstract description 5
- 238000012546 transfer Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 40
- 239000008367 deionised water Substances 0.000 claims description 18
- 229910021641 deionized water Inorganic materials 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 238000001035 drying Methods 0.000 claims description 16
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 14
- 238000009713 electroplating Methods 0.000 claims description 14
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 13
- 239000003960 organic solvent Substances 0.000 claims description 12
- 238000005406 washing Methods 0.000 claims description 12
- 238000000231 atomic layer deposition Methods 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000000243 solution Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 239000012670 alkaline solution Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 238000009210 therapy by ultrasound Methods 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000002905 metal composite material Substances 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000011010 flushing procedure Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims 4
- 238000004891 communication Methods 0.000 abstract description 4
- 238000004377 microelectronic Methods 0.000 abstract description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 65
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 230000017525 heat dissipation Effects 0.000 description 11
- 238000004140 cleaning Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 230000032798 delamination Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005187 foaming Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 231100000956 nontoxicity Toxicity 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
- H01L27/016—Thin-film circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
- H01L21/707—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thin-film circuits or parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention relates to the field of microelectronics and hybrid packaging, and aims to provide a thin film circuit with high adhesion performance on an aluminum nitride substrate and a manufacturing method thereof, wherein the manufacturing method comprises the following steps: s1: depositing an alumina dielectric layer on the aluminum nitride substrate and then annealing; s2: depositing a composite metal seed layer on the alumina dielectric layer to serve as a conductive layer, and covering the surface with photoresist; s3: after curing the photoresist, determining a metal pattern to be etched; s4: thickening the target conductive layer on the surface of the substrate through pattern transfer and development, and removing photoresist on the surface and a metal seed layer in a non-pattern area to obtain a molded metal pattern; s5: the aluminum nitride film circuit is completed by heating and checking the adhesive force of the metal pattern, the surface adhesive force performance of the aluminum nitride film circuit is excellent, and the use requirements of the technical fields of radar, electronic countermeasure, communication and other electronic information are met.
Description
Technical Field
The invention relates to the technical field of microelectronics and hybrid packaging, in particular to a thin film circuit with high adhesion performance on an aluminum nitride substrate and a manufacturing method thereof.
Background
In recent years, as the functions of equipment such as radar, electronic countermeasure, communication, etc. are more powerful, the power required for the equipment is larger, and the heat dissipation capacity of the equipment is also drastically increased. In order to ensure that the military equipment can normally operate, a good heat dissipation channel is required to be manufactured for a high-power device, heat on the surface of the power device is timely conducted out, and the heat is prevented from accumulating on the surface of the device, so that the device is burnt out due to overheating.
The aluminum nitride substrate material has good heat conduction performance, the heat conduction of the aluminum nitride substrate material is 170-230W/m.K, the heat conduction of the single crystal type aluminum nitride substrate material is even up to 275W/m.K, the heat dissipation capacity is close to that of the beryllium oxide substrate, but the aluminum nitride substrate material has no toxicity of the beryllium oxide substrate, and the aluminum nitride substrate material is a green and efficient heat conduction material. Aluminum nitride substrates have been crazy in recent years in the microelectronics industry because of their good heat dissipation capabilities, and are regarded as core electronic raw materials by the country. The power device is integrated on the surface of the aluminum nitride substrate in a mode of eutectic, welding and the like, and an efficient passive heat dissipation channel is formed for the power device, so that a metal film circuit is required to be manufactured on the surface of the aluminum nitride substrate. Because the lattice of aluminum nitride is not matched with the lattice of adhesion metals such as Ti, tiW and the like, the adhesion force of composite metal film layers such as Ti/Cu, tiW/Au and the like deposited on the surface of an aluminum nitride substrate is very weak, and the problems of film delamination, foaming, even falling off and the like easily occur in the welding process.
In order to solve the problem of the adhesion of the thin film circuit on the surface of the aluminum nitride substrate, a new manufacturing method of the thin film circuit on the surface of the aluminum nitride substrate is necessary to be invented, so that the surface adhesion performance of the aluminum nitride substrate is excellent, and the use requirements of the technical fields of electronic information such as radar, electronic countermeasure, communication and the like are met.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and solve the problem of low adhesive force to an aluminum nitride substrate in the existing thin film circuit manufacturing method, thereby improving the quality reliability of the aluminum nitride thin film circuit.
The method is realized by the following technical scheme: in one aspect, a method for manufacturing a thin film circuit with high adhesion performance on an aluminum nitride substrate includes the steps of:
s1: depositing an alumina dielectric layer on the aluminum nitride substrate and then annealing;
s2: depositing a composite metal seed layer on the alumina dielectric layer to serve as a conductive layer, and covering the surface with photoresist;
s3: after curing the photoresist, determining a metal pattern to be etched;
s4: thickening the target conductive layer on the surface of the substrate through pattern transfer and development, and removing photoresist on the surface and a metal seed layer in a non-pattern area to obtain a molded metal pattern; s5: and (5) heating to check the adhesive force of the metal pattern to finish the aluminum nitride film circuit.
Further, in the step S1, an alumina dielectric layer is deposited on the dry and clean aluminum nitride substrate by an atomic layer deposition process.
Further, in the step S4, the metal pattern determination includes the following steps:
s41: exposing the aluminum nitride substrate by ultraviolet light of a photoetching machine, and transferring a pattern to the surface of the photoresist;
s42: developing, washing with deionized water and drying on the surface of the photoresist in sequence, and thickening a conductive layer on the surface of the substrate by electroplating;
s43: after washing and drying with deionized water again, removing photoresist by using an organic solvent through ultrasonic treatment, and washing with deionized water, dehydrating with isopropanol and drying sequentially;
s44: and etching the metal seed layer in the non-pattern area by a dry method to obtain the formed metal pattern.
Further, in the step S42, the electroplating process involves electroplating Cu, ni and Au, and the electroplating method includes two methods of dc electroplating and pulse electroplating.
Further, the metal composite seed layer is a combination of two or more of Ti, tiW, niCr, cu, pt, ni, cr, pd and Au, and the thickness of the film layer is in the range of 10 nm-800 nm.
Further, the developer used is an alkaline solution.
Further, the aluminum nitride substrate in the step S1 further includes the following steps before deposition: s11: placing the aluminum nitride substrate in a high-temperature furnace with the temperature of above 600 ℃ for sintering, and then performing high-temperature flushing to execute the step S12;
s12: after the aluminum nitride substrate is cooled to below 50 ℃, washing the aluminum nitride substrate by deionized water, and executing a step S13;
s13: the aluminum nitride substrate is placed in an organic solvent and is cleaned by ultrasonic.
In the step S1, the thickness of the alumina is 100-500 nm.
On the other hand, a thin film circuit with high adhesion performance on an aluminum nitride substrate.
The beneficial effects of the invention are as follows:
(1) The aluminum nitride substrate can ensure high heat dissipation performance, and meanwhile, an aluminum oxide dielectric layer is added, so that the adhesive force of a metal conductive layer is improved, and the problems of delamination, foaming, even falling-off and the like of a metal film layer are avoided;
(2) Through the manufacturing process, the thickness and the shape of the deposited target metal conductive layer can be realized, the distribution of the alumina dielectric layer is not influenced, and the thin film circuit with high adhesiveness and strong heat dissipation performance is obtained.
Drawings
FIG. 1 is a schematic diagram of an exemplary thin film circuit according to one embodiment of the present invention, with the thin film circuit broken away;
FIG. 2 is a top view of an exemplary thin film circuit of one embodiment of the present invention;
fig. 3 is a front view of an exemplary thin film circuit according to one embodiment of the present invention.
Reference numerals illustrate: 1. a composite metal seed layer; 2. an alumina dielectric layer; 3. an aluminum nitride substrate.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings 1 to 3, in which it is evident that the embodiments described are only some, but not all embodiments of the present invention. All other embodiments, which can be made by one of ordinary skill in the art without undue burden on the person of ordinary skill in the art based on the embodiments of the present invention, are intended to be within the scope of the present application.
Example 1:
the product of this embodiment is to obtain a dielectric layer with high adhesion performance on an aluminum nitride substrate, specifically, an aluminum oxide dielectric layer with a certain thickness is deposited on a clean aluminum nitride substrate by an Atomic Layer Deposition (ALD) process to attach a subsequent composite metal seed layer, so as to improve the adhesion performance of the composite metal seed layer, wherein the purity of the aluminum oxide dielectric is not less than 99%, and the thickness of aluminum oxide is 100-500 nm. Referring to fig. 1, it is noted that the shape coverage of the alumina dielectric layer must be larger than that of the composite metal seed layer.
It should be noted that, the deposition between the specific film layers and the substrate includes, but is not limited to, the following ways, S1: depositing an alumina dielectric layer on the aluminum nitride substrate and then annealing;
s2: depositing a composite metal seed layer on the alumina dielectric layer to serve as a conductive layer, and covering the surface with photoresist;
s3: after curing the photoresist, determining a metal pattern to be etched;
it should be noted that the alumina dielectric layer is not limited to the shape and thickness of the composite metal seed layer.
Example 2:
the product of the embodiment is a thin film circuit with high adhesion performance on an aluminum nitride substrate, wherein the substrate of the circuit is an aluminum nitride substrate, the aluminum nitride substrate material has good heat conduction performance, the heat conductivity of the aluminum nitride substrate is 170-230W/m.K, the heat conduction of the single crystal type aluminum nitride substrate is even up to 275W/m.K, the heat dissipation capacity is close to that of a beryllium oxide substrate, but the aluminum nitride substrate has no toxicity of the beryllium oxide substrate, and the aluminum nitride substrate is a green and efficient heat conduction material.
It is worth to say that, because the lattice of aluminum nitride is not matched with the lattice of the adhering metal such as Ti, tiW and the like, the adhesion force of the composite metal film layer such as Ti/Cu, tiW/Au and the like deposited on the surface of the aluminum nitride substrate is very weak, and the problems such as film layer delamination, foaming and even falling off easily occur in the welding process, so that the aluminum oxide dielectric layer covers the surface of the aluminum nitride substrate, and the high adhesion performance of the composite metal seed layer is improved.
It should be noted that, the deposition between the specific film layers and the substrate includes, but is not limited to, the following ways, S1: depositing an alumina dielectric layer on the aluminum nitride substrate and then annealing;
s2: depositing a composite metal seed layer on the alumina dielectric layer to serve as a conductive layer, and covering the surface with photoresist;
s3: after curing the photoresist, the metal pattern to be etched is determined, see fig. 2.
The substrate of the thin film circuit and the conductive seed layer are integrally deposited by the exemplary methods described above.
Example 3:
the product of this example is a manufacturing process for obtaining a thin film circuit with high adhesion performance on an aluminum nitride substrate, specifically,
s1, cleaning an aluminum nitride substrate by adopting a special cleaning process, and baking the aluminum nitride substrate in a baking oven at 100-200 ℃ for more than 15min to ensure that the substrate is dried;
s2, depositing an alumina dielectric layer with a certain thickness on the clean aluminum nitride substrate by adopting an Atomic Layer Deposition (ALD);
s3, after depositing the alumina dielectric layer, taking out the aluminum nitride substrate and annealing for 1-10 min by using an annealing furnace;
s4, depositing a composite metal seed layer on the surface of the aluminum nitride substrate by adopting a PVD process;
s5, coating a layer of photoresist with a certain thickness on the surface of the metallized aluminum nitride substrate by adopting a spin coating or photoresist spraying process, and pre-baking the photoresist in a hot table or oven at 80-110 ℃ for 1-10 min;
s6, ultraviolet light with the wavelength of 365nm is adopted, exposure is carried out for a certain time by using a contact or stepping photoetching machine, and the pattern is transferred to the surface of the photoresist;
s7, developing for 30-180S by adopting a spraying or soaking mode, and cleaning with deionized water after the development is finished
Clean, and blow-dried with nitrogen or spin-dried.
S8, thickening the thickness of the conductive layer on the surface of the substrate to a target thickness by adopting an electroplating process, and cleaning with deionized water, and drying with nitrogen or spin-drying. Thickening
S9, removing photoresist on the surface of the substrate by adopting an organic solvent ultrasonic mode, washing with deionized water, dehydrating with isopropanol, drying with nitrogen or spin-drying, and baking in a baking oven at 100-200 ℃ for more than 15 min.
And S10, removing the PVD metal seed layer in the non-pattern area by adopting a dry etching process, and completing metal pattern forming.
S11, performing thermal assessment on metal by adopting a high-temperature heating mode, and performing adhesion assessment after cooling;
and S12, finally, dividing the aluminum nitride scribing into aluminum nitride film circuit products by adopting a laser cutting or grinding wheel cutting process.
In the step S1, the special cleaning process is high-temperature cleaning, deionized water rinsing and organic solvent ultrasonic cleaning, and the specific method is as follows.
S2-1, high-temperature cleaning, namely placing the aluminum nitride substrate in a high-temperature furnace with the temperature of above 600 ℃ to sinter for 1-4 hours;
s2-2, washing the substrate with deionized water for 1-10 min after the temperature is recovered to below 50 ℃;
s2-3, ultrasonic cleaning is to put the substrate in an organic solvent, and ultrasonic auxiliary means are accompanied, and the ultrasonic time is 1-10 min.
It is worth to say that in the S2-3, the organic solvent is one or more of acetone, isopropanol, alcohol, benzene and the like.
In the S2, the purity of the alumina medium is not lower than 99%, and the thickness of the alumina is 100-500 nm.
In S3, the annealing temperature ranges from 300 to 700 ℃.
In S4, the PVD process refers to a sputtering and evaporating process, wherein the sputtering process means includes one or a combination of several of magnetron sputtering (RF radio frequency, direct current, intermediate frequency, etc.), reactive sputtering, ion beam sputtering, magnetic wave rate sputtering, etc.; the metal composite seed layer is Ti, tiW, niCr, cu, pt, ni, cr, pd, au, and the thickness of the film ranges from 10nm to 800nm, and the composite metal seed layer can be applied to various embodiments of the invention.
In the step S5, the photoresist is positive photoresist or negative photoresist, and the thickness of the photoresist is 1-10 um.
It should be noted that in S6, the exposure time ranges from 30 to 180S, depending on the type and thickness of the photoresist.
It should be noted that in S7, the developing solution is an alkaline solution, such as a sodium hydroxide solution, a potassium hydroxide solution, a THMA solution, or the like, or even a mixture ratio combination of multiple alkaline solutions.
In S8, the electroplating process involves electroplating Cu, ni, au, etc., and the electroplating method includes two methods of dc electroplating and pulse electroplating.
In the step S9, the organic solvent is one or more of acetone, alcohol, isopropanol, butanone, and the like.
In S11, the high-temperature heating mode is hot stage heating or oven heating, and the heating problem is above 300 ℃; the adhesive force checking method comprises the following three steps:
s12-1, under a 40-time microscope, scraping a metal film layer by using a surgical knife, observing whether bottom metal (a resistor layer, an adhesive layer and the like) or a substrate leaks, and if so, indicating that the adhesive force is poor, otherwise, the adhesive force is good;
s12-2, a 25um gold wire is punched on the metal surface, a pull force test is carried out under a push-pull force tester, the test pull force is more than or equal to 5g (required by GJB 548B), namely the adhesive force is good, and otherwise, the adhesive force is poor.
S12-3, tearing by adopting a 3M adhesive tape, wherein the adhesive force is good when the surface metal is not pulled up or pulled off, and otherwise, the adhesive force is poor.
The above-described manner of evaluating adhesion may be applied to various embodiments of the present invention.
Example 4:
a method for manufacturing a filter thin film circuit with high adhesion performance on an aluminum nitride substrate comprises the following steps:
1) Placing the aluminum nitride substrate in a clean air atmosphere furnace, sintering at a high temperature for 1-4 h, and removing for standby when the temperature is reduced to below 100 ℃;
2) Placing the sintered aluminum nitride substrate in deionized water for washing or ultrasonic treatment for 1-15 min;
3) After deionized water is washed, placing the aluminum nitride substrate in an organic solvent for ultrasonic treatment for 1-15 min, drying or spin-drying the substrate, and placing the substrate in a baking oven at 100-200 ℃ for baking for more than 15min to ensure that the substrate is dried;
4) An Atomic Layer Deposition (ALD) process is adopted to deposit an alumina dielectric layer with a certain thickness on a clean aluminum nitride substrate;
5) After depositing the alumina dielectric layer, taking out the aluminum nitride substrate and annealing for 1-10 min by an annealing furnace;
6) A layer of composite metal seed layer is deposited on the surface of the aluminum nitride substrate by adopting a PVD process, please refer to fig. 3;
7) Coating a layer of photoresist with a certain thickness on the surface of the metallized aluminum nitride substrate by adopting a spin coating or glue spraying process, and pre-baking the photoresist for 1-10 min in a heat table or oven at 80-110 ℃;
8) Adopting 365nm wavelength ultraviolet light, and transferring the pattern to the surface of the photoresist by using a contact or stepping photoetching machine to expose for a certain time;
9) And developing for 30-180 s by adopting a spraying or soaking mode, cleaning with deionized water after the development is finished, and drying by nitrogen or spin-drying.
10 The thickness of the conductive layer on the surface of the substrate is thickened to the target thickness by adopting an electroplating process, and the substrate is cleaned by deionized water, and is dried by nitrogen or is spin-dried.
11 Removing photoresist on the surface of the substrate by adopting an organic solvent ultrasonic mode, washing with deionized water, dehydrating with isopropanol, drying with nitrogen or spin-drying, and baking in a baking oven at 100-200 ℃ for more than 15 min.
12 Removing the PVD metal seed layer in the non-pattern area by adopting a dry etching process to finish metal pattern forming.
13 Performing thermal assessment on the metal by adopting a high-temperature heating mode, and performing adhesion assessment after cooling;
14 Finally, dividing the aluminum nitride scribing into aluminum nitride film circuit products by adopting a laser cutting or grinding wheel cutting process.
In this embodiment, the aluminum nitride substrate is an aluminum nitride substrate with all-system parameters, and no special parameters or characteristics are specified.
In this embodiment, the high-temperature sintering temperature may be any temperature from 600 to 1200 ℃.
In this embodiment, the organic solvent is one or more of acetone, alcohol, isopropanol, benzene, chloroform, etc., and the frequency of the ultrasonic machine is not particularly limited.
In this embodiment, the composite functional metal seed layer is one of TiW/Au, ti/Cu, tiw/Cu, ti/Pt/Au, etc.
In the embodiment, the thickness of the alumina dielectric layer is 10-500 nm.
In this embodiment, the photoresist may be one of positive type photoresist or negative type photoresist, such as AZ4620, S1830, SU8, etc.
In this embodiment, the alkaline developer is one or more of sodium hydroxide solution, tetramethylammonium hydroxide, potassium hydroxide, etc.
In this embodiment, PVD refers to sputtering (including ion beam sputtering, magnetron sputtering, reactive sputtering, etc.) and evaporation (including electron beam evaporation, resistive thermal evaporation).
In this embodiment, the dry etching is ion beam etching or RIE etching (reactive ion etching).
In summary, the present embodiment can overcome the problem of difficult heat dissipation of the existing thin film resistor, and by attaching the aluminum oxide dielectric layer on the aluminum nitride substrate with good heat dissipation performance, the heat dissipation performance is further improved, and the adhesion performance of the composite metal seed layer can be improved, so that the composite metal seed layer with different shapes and thicknesses can be satisfied, and the application requirements of the electronic information technical fields such as radar, electronic countermeasure, communication and the like can be satisfied when the composite metal seed layer is used as a thin film circuit.
Claims (10)
1. A method for manufacturing a thin film circuit having high adhesion property on an aluminum nitride substrate, comprising the steps of:
s1: depositing an alumina dielectric layer on the aluminum nitride substrate and then annealing;
s2: depositing a composite metal seed layer on the alumina dielectric layer to serve as a conductive layer, and covering the surface with photoresist;
s3: after curing the photoresist, determining a metal pattern to be etched;
s4: thickening the target conductive layer on the surface of the substrate through pattern transfer and development, and removing photoresist on the surface and a metal seed layer in a non-pattern area to obtain a molded metal pattern;
s5: and (5) heating to check the adhesive force of the metal pattern to finish the aluminum nitride film circuit.
2. The method according to claim 1, wherein in the step S1, the alumina dielectric layer is deposited on the dry clean aluminum nitride substrate by an atomic layer deposition process.
3. The method for manufacturing a thin film circuit with high adhesion on an aluminum nitride substrate according to claim 1, wherein in the step S4, the metal pattern determination comprises the steps of:
s41: exposing the aluminum nitride substrate by ultraviolet light of a photoetching machine, and transferring a pattern to the surface of the photoresist;
s42: developing, washing with deionized water and drying on the surface of the photoresist in sequence, and thickening a conductive layer on the surface of the substrate by electroplating;
s43: after washing and drying with deionized water again, removing photoresist by using an organic solvent through ultrasonic treatment, and washing with deionized water, dehydrating with isopropanol and drying sequentially;
s44: and etching the metal seed layer in the non-pattern area by a dry method to obtain the formed metal pattern.
4. The method of manufacturing a thin film circuit with high adhesion on an aluminum nitride substrate according to claim 3, wherein the plating process used in the step S42 involves plating Cu, ni and Au by both dc plating and pulse plating.
5. The method of manufacturing a thin film circuit with high adhesion on an aluminum nitride substrate according to claim 3, wherein the metal composite seed layer is a combination of two or more of Ti, tiW, niCr, cu, pt, ni, cr, pd and Au, and the thickness of the film layer is in the range of 10nm to 800nm.
6. A method for producing a thin film circuit having high adhesion to an aluminum nitride substrate according to claim 3, wherein the developing solution is an alkaline solution.
7. The method for manufacturing a thin film circuit with high adhesion on an aluminum nitride substrate according to claim 1, wherein the aluminum nitride substrate in step S1 further comprises the following steps before deposition:
s11: placing the aluminum nitride substrate in a high-temperature furnace with the temperature of above 600 ℃ for sintering, and then performing high-temperature flushing to execute the step S12;
s12: after the aluminum nitride substrate is cooled to below 50 ℃, washing the aluminum nitride substrate by deionized water, and executing a step S13;
s13: the aluminum nitride substrate is placed in an organic solvent and is cleaned by ultrasonic.
8. The method of manufacturing a thin film circuit having high adhesion to an aluminum nitride substrate according to claim 1, wherein the thickness of the aluminum oxide in S1 is in the range of 100 to 500nm.
9. A high-adhesion performance thin film circuit on an aluminum nitride substrate is characterized in that an aluminum oxide dielectric layer with the same shape as the substrate is deposited on the surface of the aluminum nitride substrate or the aluminum oxide dielectric layer is deposited according to the target resistance and the target pattern of a composite metal conductive layer, the composite metal conductive layer is deposited on the surface of the aluminum oxide dielectric layer, and the thickness range of the aluminum oxide dielectric layer is 100-500 nm.
10. The thin film circuit of claim 9, wherein the aluminum oxide dielectric layer is deposited on the aluminum nitride substrate by an atomic layer deposition process, and the composite metal conductive layer is deposited on the aluminum oxide dielectric layer by a sputtering and evaporation process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310203928.9A CN116387301A (en) | 2023-03-06 | 2023-03-06 | High-adhesion-performance thin film circuit on aluminum nitride substrate and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310203928.9A CN116387301A (en) | 2023-03-06 | 2023-03-06 | High-adhesion-performance thin film circuit on aluminum nitride substrate and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116387301A true CN116387301A (en) | 2023-07-04 |
Family
ID=86975941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310203928.9A Pending CN116387301A (en) | 2023-03-06 | 2023-03-06 | High-adhesion-performance thin film circuit on aluminum nitride substrate and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116387301A (en) |
-
2023
- 2023-03-06 CN CN202310203928.9A patent/CN116387301A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110482482B (en) | Preparation method of insulated patterned high-thermal-conductivity diamond heat dissipation device | |
| Wang et al. | A novel method for the fabrication of integrated passive devices on SI-GaAs substrate | |
| CN103412164B (en) | The MEMS (micro electro mechanical system) probe gone between based on elastic substrates and the back side and preparation method | |
| CN103401053B (en) | Preparation method for electrode with thicker Au | |
| CN105826231A (en) | Pattern plating method for integrating two types of sheet resistance film circuits on same plane of dielectric substrate | |
| CN115313012B (en) | Method for improving adhesion of metal circuit on surface of ceramic nested ferrite substrate | |
| CN106601480B (en) | A kind of high-temperature high-frequency polyimides chip thin film capacitor and its manufacture craft | |
| CN107369617B (en) | SiC high-temperature ohmic contact electrode and manufacturing method thereof | |
| CN103993287B (en) | A kind of preparation method of gold electrode | |
| CN103840243B (en) | A kind of manufacture method of flexible co-planar waveguide | |
| CN107419230A (en) | A kind of thin film circuit via metal film plating process | |
| CN116387301A (en) | High-adhesion-performance thin film circuit on aluminum nitride substrate and manufacturing method thereof | |
| CN103632926B (en) | A kind of method of electroplating thin film circuit figure in ultrathin quartz substrate | |
| CN114447552B (en) | Novel micro-strip circulator based on MEMS (micro-electromechanical systems) process and processing method thereof | |
| CN113079626A (en) | Ceramic substrate thin film circuit structure and preparation method thereof | |
| JPS6341049A (en) | Multilayer circuit with via contacts | |
| CN104465501A (en) | Pattern electroplating method for ultra-thin quartz substrate thin-film circuit | |
| CN115954173A (en) | Preparation method of high-power diamond-based microwave load | |
| CN107177866B (en) | The method of micro- radio frequency T shape power splitter is prepared in metallic substrates | |
| JP2002118168A (en) | Thin film circuit board and its producing method | |
| CN103928301A (en) | Method for manufacturing capacitor with metal-medium-metal structure | |
| CN108879059A (en) | A kind of thin-film technique integrated approach | |
| CN107369705B (en) | GaAs semiconductor surface ohmic contact electrode and manufacturing method thereof | |
| CN116741767A (en) | Thin film circuit with high adhesion performance on ferrite substrate and manufacturing method thereof | |
| CN110034016B (en) | Method for welding aluminum layer on front surface of semiconductor chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |