CN116387188A - Substrate supporting unit - Google Patents

Substrate supporting unit Download PDF

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Publication number
CN116387188A
CN116387188A CN202211685022.7A CN202211685022A CN116387188A CN 116387188 A CN116387188 A CN 116387188A CN 202211685022 A CN202211685022 A CN 202211685022A CN 116387188 A CN116387188 A CN 116387188A
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CN
China
Prior art keywords
substrate
temperature
thermoelectric element
support unit
temperature sensing
Prior art date
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Pending
Application number
CN202211685022.7A
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Chinese (zh)
Inventor
金峻基
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TES Co Ltd
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TES Co Ltd
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Filing date
Publication date
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Publication of CN116387188A publication Critical patent/CN116387188A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention relates to a substrate support unit, and more particularly, to a substrate support unit capable of effectively cooling a substrate even when the temperature of the substrate rapidly increases during a process for treating the substrate.

Description

Substrate supporting unit
Technical Field
The present invention relates to a substrate support unit, and more particularly, to a substrate support unit capable of effectively cooling a substrate even when the temperature of the substrate rapidly increases during a process for treating the substrate.
Background
Generally, a substrate processing apparatus has a susceptor that supports a substrate inside a chamber, and performs various processing processes on the substrate. However, in a process performed for a substrate, the temperature of the substrate may rise.
For example, in the case where a so-called "Thin film encapsulation (Thin FilmEncapsulation, TFE)" process of applying an encapsulation film to an organic light emitting diode (Organic LightEmitting Diodes, OLED) substrate is performed according to a substrate processing apparatus of the related art, if the temperature of the substrate exceeds about 110 ℃, damage may occur to the OLED element. Therefore, it is necessary to control the temperature of the substrate to not more than about 80 ℃ to 90 ℃.
For this reason, in the case of the substrate processing apparatus according to the related art, the substrate can be cooled by flowing the cooling fluid through the susceptor.
However, plasma (plasma) may be used in the process of treating the substrate, and if Radio Frequency (RF) power is supplied in the case of the process using plasma, the temperature inside the chamber, particularly the temperature of the substrate, may be instantaneously increased.
In the case where the temperature of the substrate is rapidly increased as described above, it is difficult to control the temperature of the substrate to not more than 80 to 90 ℃ with the cooling by the above-described cooling fluid. The reason for this is that the cooling effect is not immediate but slow because the substrate is cooled by the cooling fluid through the susceptor.
Disclosure of Invention
[ problem to be solved by the invention ]
The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a substrate support unit capable of immediately and effectively cooling a substrate when the temperature of the substrate rapidly increases.
[ means of solving the problems ]
The object of the present invention as described above is achieved by a substrate support unit comprising: a susceptor disposed inside the chamber and supporting the substrate, and having a cooling flow path for a cooling fluid to flow inside; a first temperature sensing unit which is disposed on the susceptor and senses the temperature of the substrate; and a thermoelectric element disposed on the susceptor and configured to cool the substrate.
Here, the first temperature sensing part may be located at an upper portion of the thermoelectric element at an inner side of the base, and disposed adjacent to an uppermost end of the base.
In addition, the diameter or area of the thermoelectric element may be greater than the diameter or area of the substrate.
Further, the thermoelectric element may cool the substrate when the first measured temperature measured by the first temperature sensing unit reaches a first set temperature set in advance.
In another aspect, the substrate supporting unit may further include a second temperature sensing part disposed at the base and located at a lower portion of the first temperature sensing part.
In this case, the second temperature sensing portion may be disposed adjacent to the cooling flow path inside the base.
The substrate support unit further includes a heat exchange device that supplies the cooling fluid to the cooling flow path of the susceptor, exchanges heat with the cooling fluid coming out of the susceptor, and cools the temperature of the cooling fluid supplied to the cooling flow path to correspond to a preset supply temperature when a second measured temperature measured in the second temperature sensing unit reaches a preset second set temperature.
In another aspect, the second set temperature may be set lower than the first set temperature.
[ Effect of the invention ]
According to the present invention having the above-described configuration, by disposing the thermoelectric element inside the susceptor, the substrate can be effectively cooled by the thermoelectric element even when the temperature of the substrate is rapidly increased, and damage to the substrate can be prevented.
Drawings
Fig. 1 is a side view of a substrate processing apparatus having a substrate supporting unit according to an embodiment of the present invention.
Fig. 2 is a side view illustrating the substrate supporting unit of fig. 1.
Fig. 3 is a side view illustrating a substrate supporting unit according to another embodiment.
[ description of symbols ]
100: chamber chamber
110: processing space
200: gas supply unit
300: substrate supporting unit
310: base seat
400: thermoelectric element
500: heat exchange device
600: thermoelectric element control unit
700: first temperature sensing part
710: second temperature sensing part
Detailed Description
Hereinafter, a structure of the substrate supporting unit according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
Fig. 1 is a side view of a substrate processing apparatus 1000 having a substrate supporting unit 300 according to an embodiment of the present invention, and fig. 2 is a side view illustrating the substrate supporting unit 300 of fig. 1.
Referring to fig. 1 and 2, the substrate processing apparatus 1000 may have a chamber 100, and the chamber 100 provides a processing space 110 in which various processes such as deposition, etching, and the like may be performed on a substrate 10.
A gas supply part 200 for supplying a process gas toward the substrate 10 may be provided at an upper inner portion of the chamber 100.
In addition, a substrate supporting unit 300 for supporting and cooling the substrate 10 may be disposed at the inner lower portion of the chamber 100.
For example, the substrate supporting unit 300 may have a susceptor 310 disposed inside the chamber 100 and supporting the substrate 10. A substrate 10 is mounted on an upper portion of the susceptor 310 to perform a process for the substrate 10.
The temperature of the substrate 10 may rise while the process for the substrate 10 is performed. In the case where the substrate processing apparatus 1000 according to the present invention performs a so-called "Thin film encapsulation (Thin FilmEncapsulation, TFE)" process of applying an encapsulation film to, for example, an Organic Light emitting diode (Organic Light EmittingDiodes, OLED) substrate, damage may occur to the OLED element if the temperature of the substrate exceeds about 110 ℃. Therefore, it is necessary to control the temperature of the substrate 10 to not more than about 90 ℃.
For this, a cooling flow path 312 through which a cooling fluid flows may be formed in the susceptor 310. The susceptor 310 and the substrate 10 may be cooled while the cooling fluid flows along the cooling flow path 312. The cooling fluid is discharged from the susceptor 310 to the heat exchange device 500 through the discharge flow path 520, cooled again in the heat exchange device 500, and supplied to the susceptor 310 through the supply flow path 510.
In the case of cooling the substrate by the cooling fluid, the temperature of the susceptor 310 and the substrate 10 can be kept constant and controlled to be about 80 to 90 ℃.
However, plasma (plasma) may be used in the treatment process for the substrate 10. For this purpose, an RF power may be supplied to either the gas supply unit 200 or the susceptor 310. For example, as shown in fig. 1, the RF power is supplied to the gas supply part 200, so that the gas supply part 200 may function as a first electrode. In this case, the susceptor 310 is grounded and functions as a second electrode, so that plasma (P) can be provided between the gas supply part 200 and the susceptor 310.
As described above, if RF power is supplied in the case of a process using plasma, the temperature inside the chamber 100, particularly the temperature of the substrate 10, is instantaneously increased. In the case where the temperature of the substrate 10 is rapidly increased as described above, it is difficult to control the temperature of the substrate 10 to not more than 90 ℃ by the cooling fluid. That is, the reason for this is that the cooling effect is not immediate but slow since the substrate 10 is cooled by the cooling fluid passing through the susceptor 310.
Accordingly, the present invention provides the substrate support unit 300 that can effectively cool the substrate 10 in response to a rapid temperature change or temperature rise of the substrate 10.
The substrate support unit 300 according to the present invention may include: a thermoelectric element 400 for cooling the substrate in the susceptor 310; and a first temperature sensing unit 700 for sensing the temperature of the substrate 10.
Here, the thermoelectric element 400 may be adjacent to the uppermost end of the base 310 and disposed at an upper portion of the cooling flow path 312 at an inner side of the base 310. That is, in the case where the thermoelectric element 400 is disposed adjacent to the uppermost end of the base 310, the distance between the substrate 10 and the thermoelectric element 400 is reduced, so that the cooling effect by the thermoelectric element 400 can be improved. The thermoelectric element 400 may be formed of, for example, a "Peltier (Peltier) element", but is not limited thereto, and may be implemented in various ways.
In addition, the diameter (D of the thermoelectric element 400 1 ) Or the area may be formed to be larger than the diameter (D 2 ) Or large in area so that the thermoelectric element 400 can effectively cool the substrate 10.
On the other hand, a thermoelectric element control unit 600 for controlling the thermoelectric element 400 may be disposed outside the chamber 100. The thermoelectric element control unit 600 may control the thermoelectric element 400 through a power line 610. The thermoelectric element control unit 600 controls the thermoelectric element 400 based on the measured temperature measured by the first temperature sensing unit 700. The first temperature sensing part 700 may be formed of, for example, a "thermocouple", but is not limited thereto.
In this case, the first temperature sensing part 700 may be disposed adjacent to the uppermost end of the base 310. In addition, the first temperature sensing part 700 may be located at an upper portion of the thermoelectric element 400 in the base 310.
As described above, in order to effectively cool the temperature of the substrate 10 by the thermoelectric element 400, it is necessary to accurately measure the temperature of the substrate 10. However, in the case of supplying plasma to the processing space where the substrate 10 is positioned, it is not preferable to expose sensors or the like to the processing space 110 because it is difficult to measure the temperature of the substrate 10 and the plasma process may be affected.
Therefore, in the present invention, the first temperature sensing part 700 is disposed inside the susceptor 310 as close to the substrate 10 as possible. As shown in fig. 2, the first temperature sensing part 700 extends from a lower portion to an uppermost end along the base 310, and this upper end portion is located at an upper portion of the thermoelectric element 400. In addition, an upper end portion of the first temperature sensing part 700 is adjacent to an uppermost end of the base 310. Therefore, the temperature of the substrate 10 can be measured more accurately by the first temperature sensing unit 700.
In the case of the above configuration, the thermoelectric element 400 cools the substrate 10 when the first measured temperature measured by the first temperature sensing unit 700 reaches a first set temperature set in advance.
For example, when the first set temperature is set to 90 ℃, if the first measured temperature measured by the first temperature sensing unit 700 reaches 90 ℃, the thermoelectric element control unit 600 drives the thermoelectric element 400.
The thermoelectric element 400 is disposed adjacent to the substrate 10 in the susceptor 310 so that cooling of the substrate 10 can be performed instantaneously. The driving of the thermoelectric element 400 can be repeatedly performed in a short time.
The thermoelectric element control part 600 may repeatedly drive the thermoelectric element 400 in a short time until the first measured temperature is lowered to be less than the first set temperature compared to the first set temperature.
On the other hand, fig. 3 is a side view illustrating a substrate supporting unit 300' according to another embodiment.
Referring to fig. 3, the substrate supporting unit 300' may further include a second temperature sensing part 710 disposed at the base 310 and located at a lower portion of the first temperature sensing part 700.
The second temperature sensing part 710 may extend from a lower portion to an upper portion along the base 310, and an upper end portion thereof may be disposed adjacent to the cooling flow path 312. The second temperature sensing unit 710 may be formed of a thermocouple in the same manner as the first temperature sensing unit 700, but is not limited thereto.
In this case, when the second measured temperature measured by the second temperature sensing unit 710 reaches a second preset temperature, the heat exchanging device 500 may cool the temperature of the cooling fluid supplied to the cooling flow path 312 to correspond to the preset supply temperature.
For example, in the case where the second set temperature is set to about 80 ℃, if the second measured temperature measured by the second temperature sensing part 710 reaches 80 ℃, the heat exchanging device 500 further reduces the temperature of the cooling fluid supplied through the supply flow path 510 and supplies the cooling fluid to the susceptor 310.
The heat exchange device 500 may adjust the temperature of the cooling fluid until the second measured temperature is reduced to less than the second set temperature as compared to the second set temperature.
As described above, the cooling effect of the thermoelectric element 400 proceeds faster, and the cooling effect by the cooling flow path proceeds relatively slower. Therefore, the second set temperature can be set lower than the first set temperature. However, if the second set temperature is set too low, it may affect the process temperature inside the chamber 100, and thus the second set temperature may be set higher than the desired process temperature and lower than the first set temperature.
The substrate support unit 300 according to the present invention reduces the temperature of the substrate 10 by using the above-mentioned cooling fluid and maintains the temperature as constant as possible, and further effectively cools the substrate 10 by the thermoelectric element 400 through immediate cooling in the case where the temperature of the substrate 10 is rapidly increased due to process conditions such as plasma.
Although the present invention has been described above with reference to the preferred embodiments, various modifications and changes can be made by one of ordinary skill in the art without departing from the spirit and scope of the present invention as set forth in the claims set forth above. Accordingly, it is considered that the implementation of the modification is included in the technical scope of the present invention if the implementation of the modification basically includes the constituent elements of the claims of the present invention.

Claims (8)

1. A substrate support unit, comprising:
a susceptor disposed inside the chamber and supporting the substrate, and having a cooling flow path for a cooling fluid to flow inside;
a first temperature sensing unit which is disposed on the susceptor and senses the temperature of the substrate; and
and a thermoelectric element disposed on the susceptor and configured to cool the substrate.
2. The substrate support unit of claim 1, wherein,
the first temperature sensing part is located at an upper portion of the thermoelectric element at an inner side of the base and is disposed adjacent to an uppermost end of the base.
3. The substrate support unit of claim 1, wherein,
the thermoelectric element has a diameter or area greater than the diameter or area of the substrate.
4. The substrate support unit of claim 1, wherein,
the thermoelectric element cools the substrate when the first measured temperature measured by the first temperature sensing unit reaches a first set temperature set in advance.
5. The substrate support unit of claim 4, further comprising:
the second temperature sensing part is arranged on the base and is positioned at the lower part of the first temperature sensing part.
6. The substrate support unit of claim 5, wherein,
the second temperature sensing portion is disposed adjacent to the cooling flow path inside the base.
7. The substrate support unit of claim 6, further comprising:
a heat exchange device for supplying the cooling fluid to the cooling flow path of the base and exchanging heat with the cooling fluid coming out of the base,
when the second measured temperature measured by the second temperature sensing unit reaches a second preset temperature, the heat exchange device cools the temperature of the cooling fluid supplied to the cooling flow path so as to correspond to the preset supply temperature.
8. The substrate support unit of claim 7, wherein,
the second set temperature is set lower than the first set temperature.
CN202211685022.7A 2021-12-30 2022-12-27 Substrate supporting unit Pending CN116387188A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020210192186A KR20230102228A (en) 2021-12-30 2021-12-30 Substrate supporting unit
KR10-2021-0192186 2021-12-30

Publications (1)

Publication Number Publication Date
CN116387188A true CN116387188A (en) 2023-07-04

Family

ID=86964395

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211685022.7A Pending CN116387188A (en) 2021-12-30 2022-12-27 Substrate supporting unit

Country Status (2)

Country Link
KR (1) KR20230102228A (en)
CN (1) CN116387188A (en)

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Publication number Publication date
KR20230102228A (en) 2023-07-07

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