CN116381311B - Current measurement system and method based on magneto-resistance effect - Google Patents
Current measurement system and method based on magneto-resistance effect Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates
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Abstract
The invention discloses a current measurement system and a method based on a magneto-resistance effect, and relates to the technical field of current measurement, wherein the system comprises a device layer, a control layer and a data storage layer; the device layer comprises a magnetic resistance resistor, a voltage collector, a magnetic induction intensity sensor, a temperature sensor and a CPU, the control layer comprises a current value calculation module, a measurement error calculation module and a measurement current value correction module, the current value calculation module is used for calculating a current value of a circuit to be measured based on a magnetic resistance effect according to data obtained by measurement of the device layer, the measurement error calculation module is used for calculating an error generated when the current value is measured under the action of temperature and magnetic induction intensity, and the measurement current value correction module is used for analyzing an actual current value of the circuit to be measured according to the current value of the circuit to be measured based on the magnetic resistance effect and the error obtained by calculation.
Description
Technical Field
The present invention relates to the field of current measurement technologies, and in particular, to a current measurement system and method based on a magnetoresistance effect.
Background
Along with the continuous development of current measurement technology, the accuracy of current measurement data is also continuously improved, but the problem of larger current measurement error still exists in the prior art, and the research on the influence of environmental factors in the current measurement process is insufficient.
As disclosed in chinese patent application publication No. CN113295920a, a micro-dc non-contact detection probe and a measurement system based on magnetoresistance effect are disclosed, the former includes an internal sensor element, a measurement magnetic field guiding layer and an outer shielding layer, the outer shielding layer is in a cylindrical structure, the measurement magnetic field guiding layer is coaxially sleeved inside the outer shielding layer, at least one notch is provided on the measurement magnetic field guiding layer, the internal sensor element is located at the notch treatment position of the measurement magnetic field guiding layer, and the internal sensor element and the measurement magnetic field guiding layer are combined to form a cylindrical shape. According to the invention, the wire to be measured passes through the inner side of the inner magnetic field layer, the first magnetic resistance element, the second magnetic resistance element and the third magnetic resistance element are used for detecting micro direct current of the wire to be measured, the original wire to be measured is replaced, non-contact measurement is realized, interference of the circuit to be measured is avoided, convenience and simplicity are realized, and the wire to be measured does not need to be connected in series to the original wire, so that the working state of the measuring circuit does not influence the operation of the original circuit to be measured, and the measurement is stable.
The Chinese patent with the application publication number of CN113325228A discloses a single-side current detection device and a single-side current detection method based on a magneto-resistance effect sensor array, wherein the single-side current detection device comprises a TMR magneto-resistance chip array, an AMR magneto-resistance chip array, a signal processing circuit module and a microcontroller; the TMR magnetoresistive chip array comprises three TMR magnetoresistive chips, the AMR magnetoresistive chip array comprises three AMR magnetoresistive chips, the TMR magnetoresistive chip array and the AMR magnetoresistive chip array measure the magnetic field around the current-carrying conductor, voltage signals are output, the voltage signals are processed by the signal processing circuit module and then input into the microcontroller, and the microcontroller calculates to obtain the current value of the current-carrying conductor to be measured. The invention discloses a high-sensitivity current measuring device which has a wire positioning function and can be used for conducting wire current value non-contact measurement on one side of a wire based on a magneto-resistance effect principle.
The problems presented in the background art exist in the above patents: the influence of environmental factors on the accuracy of the current measurement is not taken into account when making the current measurement. To solve this problem, the present invention proposes a current measurement system and method based on the magnetoresistance effect.
Disclosure of Invention
Aiming at the defects of the prior art, the main purpose of the invention is to provide a current measurement system and a method based on a magneto-resistance effect, which can effectively solve the problems in the background art. The specific technical scheme of the invention is as follows:
a current measurement system based on a magneto-resistive effect, the system comprising a device layer, a control layer, a data storage layer;
the device layer includes: the system comprises a magnetic resistance resistor, a voltage collector, a magnetic induction intensity sensor, a temperature sensor and a CPU, wherein the resistance value of the magnetic resistance resistor is correspondingly increased and decreased according to the increase and decrease of the magnetic field intensity, and is simultaneously used for being connected into a circuit to be measured to measure the current value of a magnetic resistance current measuring point of the circuit to be measured, the voltage collector is used for measuring the voltage value of two ends of the magnetic resistance resistor, the magnetic induction intensity sensor is used for measuring the magnetic induction intensity of the magnetic resistance current measuring point of the circuit to be measured, the temperature sensor is used for measuring the temperature of the magnetic resistance current measuring point of the circuit to be measured, and the CPU is used for calculating the current value according to the voltage value collected by the voltage collector and correcting errors generated in the current measuring process;
the data storage layer is used for storing the data acquired by the equipment layer;
the control layer comprises a current value calculation module, a measurement error calculation module and a measurement current value correction module, wherein the current value calculation module is used for calculating a current value of a circuit to be measured under the running state based on the magnetic resistance effect according to data obtained by measurement of the equipment layer, the measurement error calculation module is used for calculating an error generated when the current value is measured under the action of temperature and magnetic induction intensity, and the measurement current value correction module is used for analyzing an actual current value of the circuit to be measured according to the current value of the circuit to be measured based on the magnetic resistance effect and the error obtained by calculation.
The invention further improves that the current value calculation module comprises a current value calculation strategy based on a magneto-resistance effect of a circuit to be tested, and the current value based on the magneto-resistance effect of the circuit to be tested comprises the following specific steps:
101. is provided withMagneto-resistance resistor with magnetic induction intensity of 0Resistance value of the device, ">A magnetoresistance coefficient for the magnetoresistive resistor;
102. the magnetic induction intensity of a magnetic resistance current measuring point of a circuit to be measured, which is measured by a magnetic induction intensity sensor, is extracted as follows；
103. Extracting voltage value of circuit to be tested acquired by voltage acquisition unit；
104. Current value of circuit under test based on magneto-resistance effect。
The invention further improves that the measuring error calculating module comprises a temperature error calculating unit, wherein the temperature error calculating unit is used for calculating average errors generated when measuring current values of magnetic resistance current measuring points of a circuit to be measured under different temperature effects, and comprises the following specific steps:
201. assume that the input current value of the circuit to be tested is；
202. Calculating when the magnetic induction intensity isAt the time, the temperature is +.>Current value based on magneto-resistance effect of circuit under test in state +.>Wherein->For measuring the magnetic induction of a point of the magnetoresistive current of a circuit to be measured>The value of->For measuring the temperature of the point of the magnetoresistive current of the circuit to be measured>Taking values;
203. then when the magnetic induction intensity isAt the time, the temperature is +.>Error generated during measuring current value of magnetic resistance current measuring point of circuit to be measured in state +.>；
204. Constructing a current value error matrix of a reluctance current measurement point of a circuit to be tested with respect to temperature and magnetic induction intensity；
205. When the magnetic induction intensity is a certain value, the average error generated during the measurement of the current value of the magnetic resistance current measuring point of the circuit to be measured under the action of different temperatures。
The invention further improves that the measuring error calculating module comprises a magnetic induction intensity error calculating strategy, wherein the magnetic induction intensity error calculating strategy is used for calculating average errors generated when measuring current values of magnetic resistance current measuring points of a circuit to be measured under the action of different magnetic induction intensities, and comprises the following specific steps:
301. calculating average error generated when measuring current values of the circuit to be measured under the action of different magnetic induction intensities when temperature is fixed。
The invention further improves that the measuring current value correction module comprises a measuring current value correction strategy, wherein the measuring current value correction strategy is used for analyzing the actual current value of the circuit to be measured according to the current value of the circuit to be measured based on the magnetic resistance effect and the calculated error, and comprises the following specific steps:
401. calculating an error matrix of the current value of the circuit to be tested with respect to temperature and magnetic induction intensityAll->Total mean>；
402. The influence degree of the temperature on the current value of the circuit to be tested is that；
403. The influence degree of the magnetic induction intensity on the current value of the circuit to be tested is that；
404. The actual current value of the circuit to be tested。
A current measurement method based on a magneto-resistance effect comprises the following specific steps:
a1, measuring a resistance value and a voltage value of a magnetoresistive resistor after the magnetoresistive resistor is connected into a circuit to be tested;
a2, measuring the magnetic induction intensity and the temperature of the circuit to be measured after being connected into the magneto-resistance resistor;
a3, calculating a current value of the circuit to be tested based on a magneto-resistance effect;
a4, calculating errors generated when the current value is measured under the action of temperature and magnetic induction intensity;
and A5, analyzing the actual current value of the circuit to be tested according to the results obtained in the step A3 and the step A4.
Compared with the prior art, the invention has the following beneficial effects:
c1, the influence of temperature and magnetic induction intensity on the measurement of the current based on the magnetic resistance effect can be further fully considered, and the calculation efficiency of the current measurement error caused by the temperature and the magnetic induction intensity in the magnetic resistance current measurement is improved;
and c2, the invention can correct the current measurement error caused by temperature and magnetic induction intensity when measuring the magnetic resistance current, and further improve the accuracy of current measurement based on the magnetic resistance effect.
Drawings
FIG. 1 is a schematic diagram of a system and method for measuring current based on magneto-resistive effect according to the present invention.
FIG. 2 is a flow chart of the operation of a system and method for measuring current based on the magneto-resistive effect according to the present invention.
Detailed Description
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present invention is not limited to the specific embodiments disclosed below.
Further, reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic can be included in at least one implementation of the invention. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments.
Examples
The embodiment further calculates the actual current value of the circuit to be measured accurately by a current measurement system and a current measurement method based on the magneto-resistance effect, and the specific scheme is that, as shown in fig. 1 and fig. 2, the current measurement system and the current measurement method based on the magneto-resistance effect comprise a device layer, a control layer and a data storage layer;
the device layer includes: the system comprises a magnetic resistance resistor, a voltage collector, a magnetic induction intensity sensor, a temperature sensor and a CPU, wherein the resistance value of the magnetic resistance resistor is correspondingly increased and decreased according to the increase and decrease of the magnetic field intensity, and is simultaneously used for being connected into a circuit to be measured to measure the current value of a magnetic resistance current measuring point of the circuit to be measured, the voltage collector is used for measuring the voltage value of two ends of the magnetic resistance resistor, the magnetic induction intensity sensor is used for measuring the magnetic induction intensity of the magnetic resistance current measuring point of the circuit to be measured, the temperature sensor is used for measuring the temperature of the magnetic resistance current measuring point of the circuit to be measured, and the CPU is used for calculating the current value according to the voltage value collected by the voltage collector and correcting errors generated in the current measuring process;
the data storage layer is used for storing the data acquired by the equipment layer;
in this embodiment, the control layer includes a current value calculation module, a measurement error calculation module, and a measurement current value correction module, where the current value calculation module is configured to calculate a current value based on a magnetoresistance effect of the circuit to be tested in an operation state according to data obtained by measurement of the device layer, the measurement error calculation module is configured to calculate an error generated when the current value is measured under the action of temperature and magnetic induction intensity, and the measurement current value correction module is configured to analyze an actual current value of the circuit to be tested according to the current value based on the magnetoresistance effect of the circuit to be tested and the error obtained by calculation.
In this embodiment, the current value calculation module includes a current value calculation strategy based on a magnetoresistance effect of a circuit to be tested, and the current value based on the magnetoresistance effect of the circuit to be tested includes the following specific steps:
101. is provided withResistance value of magneto-resistance resistor at magnetic induction intensity of 0, < >>A magnetoresistance coefficient for the magnetoresistive resistor;
102. the magnetic induction intensity of a magnetic resistance current measuring point of a circuit to be measured, which is measured by a magnetic induction intensity sensor, is extracted as follows；
103. Extracting voltage value of circuit to be tested acquired by voltage acquisition unit；
104. Current value of circuit under test based on magneto-resistance effect。
In this embodiment, the measurement error calculation module includes a temperature error calculation unit, where the temperature error calculation unit is configured to calculate average errors generated during measurement of current values of magnetoresistive current measurement points of a circuit to be measured under different temperature effects, and includes the following specific steps:
201. assume that the input current value of the circuit to be tested is；
202. Calculating when the magnetic induction intensity isAt the time, the temperature is +.>Current value based on magneto-resistance effect of circuit under test in state +.>Wherein->For measuring the magnetic induction of a point of the magnetoresistive current of a circuit to be measured>The value of->For measuring the temperature of the point of the magnetoresistive current of the circuit to be measured>Taking values;
203. then when the magnetic induction intensity isAt the time, the temperature is +.>Error generated during measuring current value of magnetic resistance current measuring point of circuit to be measured in state +.>；
204. Constructing a current value error matrix of a reluctance current measurement point of a circuit to be tested with respect to temperature and magnetic induction intensity；
205. When the magnetic induction intensity is a certain value, the average error generated during the measurement of the current value of the magnetic resistance current measuring point of the circuit to be measured under the action of different temperatures。
In this embodiment, the measurement error calculation module includes a magnetic induction intensity error calculation strategy, where the magnetic induction intensity error calculation strategy is used to calculate average errors generated when measuring current values of magnetoresistive current measurement points of a circuit to be measured under different magnetic induction intensities, and the method includes the following specific steps:
301. when the temperature is fixed, the current value of the circuit to be measured under the action of different magnetic induction intensities is calculated to be generatedAverage error of (a)。
In this embodiment, the measured current value correction module includes a measured current value correction strategy, where the measured current value correction strategy is used to analyze an actual current value of the circuit to be tested according to a current value of the circuit to be tested based on a magnetoresistance effect and a calculated error, and includes the following specific steps:
401. calculating an error matrix of the current value of the circuit to be tested with respect to temperature and magnetic induction intensityAll->Total mean>；
402. The influence degree of the temperature on the current value of the circuit to be tested is that；
403. The influence degree of the magnetic induction intensity on the current value of the circuit to be tested is that；
404. The actual current value of the circuit to be tested。
In this embodiment, the method includes the following specific steps:
a1, measuring a resistance value and a voltage value of a magnetoresistive resistor after the magnetoresistive resistor is connected into a circuit to be tested;
a2, measuring the magnetic induction intensity and the temperature of the circuit to be measured after being connected into the magneto-resistance resistor;
a3, calculating a current value of the circuit to be tested based on a magneto-resistance effect;
a4, calculating errors generated when the current value is measured under the action of temperature and magnetic induction intensity;
and A5, analyzing the actual current value of the circuit to be tested according to the results obtained in the step A3 and the step A4.
The implementation of the embodiment can be realized: the actual current value of the circuit to be measured is further accurately calculated by a current measurement system and method based on the magneto-resistance effect.
The foregoing has shown and described the basic principles and main features of the present invention and the advantages of the present invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present invention, and various changes and modifications may be made without departing from the spirit and scope of the invention, which is defined in the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (5)
1. A current measurement system based on the magneto-resistive effect, characterized in that: the device comprises a device layer, a control layer and a data storage layer;
the device layer includes: the system comprises a magnetic resistance resistor, a voltage collector, a magnetic induction intensity sensor, a temperature sensor and a CPU, wherein the resistance value of the magnetic resistance resistor is correspondingly increased and decreased according to the increase and decrease of the magnetic field intensity, and is simultaneously used for being connected into a circuit to be measured to measure the current value of a magnetic resistance current measuring point of the circuit to be measured, the voltage collector is used for measuring the voltage value of two ends of the magnetic resistance resistor, the magnetic induction intensity sensor is used for measuring the magnetic induction intensity of the magnetic resistance current measuring point of the circuit to be measured, the temperature sensor is used for measuring the temperature of the magnetic resistance current measuring point of the circuit to be measured, and the CPU is used for calculating the current value according to the voltage value collected by the voltage collector and correcting errors generated in the current measuring process;
the data storage layer is used for storing the data acquired by the equipment layer;
the control layer comprises a current value calculation module, a measurement error calculation module and a measurement current value correction module, wherein the current value calculation module is used for calculating a current value of a circuit to be measured under the running state based on a magneto-resistance effect according to data obtained by measurement of an equipment layer, the measurement error calculation module is used for calculating an error generated when the current value is measured under the action of temperature and magnetic induction intensity, and the measurement current value correction module is used for analyzing an actual current value of the circuit to be measured according to the current value of the circuit to be measured based on the magneto-resistance effect and the error obtained by calculation; the measured current value correction module comprises a measured current value correction strategy, wherein the measured current value correction strategy is used for analyzing the actual current value of the circuit to be tested according to the current value of the circuit to be tested based on the magneto-resistance effect and the calculated error, and comprises the following specific steps:
401. calculating an error matrix of the current value of the circuit to be tested with respect to temperature and magnetic induction intensityAll->Total mean>Wherein error matrix->When the magnetic induction intensity is +.>At a temperature ofErrors generated during the measurement of the current value of the reluctance current measurement point of the circuit to be measured in the state,for when the magnetic induction intensity is +.>At the time, the temperature is +.>Errors generated during current value measurement of a magnetic resistance current measurement point of a circuit to be tested under a state;
402. the influence degree of the temperature on the current value of the circuit to be tested is thatWherein->When the magnetic induction intensity is a certain value, the average error generated during the measurement of the current value of the magnetic resistance current measuring point of the circuit to be measured under the action of different temperatures is +.>When the temperature is fixed, the average error generated during the measurement of the current value of the circuit to be measured under the action of different magnetic induction intensities is adopted;
403. the influence degree of the magnetic induction intensity on the current value of the circuit to be tested is that；
404. The actual current value of the circuit to be tested。
2. A magnetoresistance effect based current measurement system according to claim 1, wherein: the current value calculation module comprises a current value calculation strategy based on a magneto-resistance effect of a circuit to be tested, and the current value based on the magneto-resistance effect of the circuit to be tested comprises the following specific steps:
101. is provided withResistance value of magneto-resistance resistor at magnetic induction intensity of 0, < >>A magnetoresistance coefficient for the magnetoresistive resistor;
102. the magnetic induction intensity of a magnetic resistance current measuring point of a circuit to be measured, which is measured by a magnetic induction intensity sensor, is extracted as follows；
103. Extracting voltage value of circuit to be tested acquired by voltage acquisition unit；
104. Current value of circuit under test based on magneto-resistance effect。
3. A magnetoresistance effect based current measurement system according to claim 1, wherein: the measurement error calculation module comprises a temperature error calculation unit, wherein the temperature error calculation unit is used for calculating average errors generated during current value measurement of a magnetic resistance current measurement point of a circuit to be measured under different temperature effects, and comprises the following specific steps:
201. assume that the input current value of the circuit to be tested is；
202. Calculating when the magnetic induction intensity isAt the time, the temperature is +.>Current value based on magneto-resistance effect of circuit under test in state +.>Wherein->For measuring the magnetic induction of a point of the magnetoresistive current of a circuit to be measured>The value of->For measuring the temperature of the point of the magnetoresistive current of the circuit to be measured>Taking values;
203. then when the magnetic induction intensity isAt the time, the temperature is +.>Error generated during measuring current value of magnetic resistance current measuring point of circuit to be measured in state +.>；
204. Constructing a current value error matrix of a reluctance current measurement point of a circuit to be tested with respect to temperature and magnetic induction intensity；
205. When the magnetic induction intensity is a certain value, the average error generated during the measurement of the current value of the magnetic resistance current measuring point of the circuit to be measured under the action of different temperatures。
4. A magnetoresistance effect based current measurement system according to claim 3, wherein: the measurement error calculation module comprises a magnetic induction intensity error calculation strategy, wherein the magnetic induction intensity error calculation strategy is used for calculating average errors generated during current value measurement of a magnetic resistance current measurement point of a circuit to be measured under the action of different magnetic induction intensities, and the measurement error calculation module comprises the following specific steps:
301. calculating average error generated when measuring current values of the circuit to be measured under the action of different magnetic induction intensities when temperature is fixed。
5. A magnetoresistance effect based current measurement method based on a magnetoresistance effect based current measurement system according to any of claims 1-4, characterized in that: the method comprises the following specific steps:
a1, measuring a resistance value and a voltage value of a magnetoresistive resistor after the magnetoresistive resistor is connected into a circuit to be tested;
a2, measuring the magnetic induction intensity and the temperature of the circuit to be measured after being connected into the magneto-resistance resistor;
a3, calculating a current value of the circuit to be tested based on a magneto-resistance effect;
a4, calculating errors generated when the current value is measured under the action of temperature and magnetic induction intensity;
and A5, analyzing the actual current value of the circuit to be tested according to the results obtained in the step A3 and the step A4.
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