CN116367596B - Display panel and preparation method thereof - Google Patents
Display panel and preparation method thereof Download PDFInfo
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- CN116367596B CN116367596B CN202310526531.3A CN202310526531A CN116367596B CN 116367596 B CN116367596 B CN 116367596B CN 202310526531 A CN202310526531 A CN 202310526531A CN 116367596 B CN116367596 B CN 116367596B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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Abstract
The application provides a display panel and a preparation method thereof, wherein the display panel comprises: a substrate; a driving circuit layer located at one side of the substrate; the anode film layer comprises a plurality of sub-anode film layers which are arranged at intervals on one side of the drive circuit layer, which is away from the substrate; the pixel definition layer is arranged between two adjacent sub-anode film layers; the conducting layer is arranged on one side of the pixel definition layer, which is away from the substrate; the insulating layer is arranged on one side of the conducting layer, which is away from the substrate, and part of the insulating layer protrudes out of the side edge of the conducting layer and is a heat-shrinkable structure layer; the organic light-emitting layer is arranged on the anode film layer and the pixel definition layer; the cathode film layer is arranged on the organic light-emitting layer and covers part of the side surface of the conductive layer; and the inorganic packaging layer is arranged on the cathode film layer and the conductive layer. The insulating layer in the display panel provided by the application can be heated and contracted, so that the contact area of the cathode film layer and the conductor layer is increased, the lap resistance of the cathode film layer and the conductor layer is reduced, the coverage area and the strength of the inorganic packaging layer are improved, and the display effect is improved.
Description
Technical Field
The application belongs to the technical field of display panels, and particularly relates to a display panel and a preparation method thereof.
Background
Organic electroluminescent display devices, such as Organic Light Emitting Diode (OLED) displays, have characteristics of automatic light emission, wide viewing angle, rapid response, small thickness, high contrast, etc., and thus, organic electroluminescent devices as next-generation flat panel display devices have been widely used in our mobile phones, flat panels, and even computer display panels. In general, an OLED display panel includes a plurality of pixels for emitting light of different colors, and the plurality of pixels emit light to display an image. Each pixel is overlapped and mixed by the sub-pixels of Red, green, blue to realize the display of a white picture, and different color pictures are displayed by controlling the luminous degree of the sub-pixels of different colors.
There are three ways to make three color light emitting devices: firstly, adopting a fine metal mask plate as a mask to respectively deposit three-color light-emitting devices, secondly adopting an ink-jet printing scheme to respectively print the three-color light-emitting devices, and thirdly adopting a photoetching mode to etch the three-color light-emitting devices on a substrate after the whole surface is formed into a film. The first approach is applied by the technology now commonly employed. However, with the increase of PPI (pixel density unit Pixels Per Inch) of the display panel, the metal mask cannot cope well, and the etching of the pattern by using the photolithography technique has become a subject of intensive research in the industry.
In the prior art, the following problems exist in the manufacture of a light emitting device by adopting a photoetching technology: when the cathode film layer is prepared, the contact area between the cathode film layer and the conductor is limited due to the limitation of the end part of the insulating layer, so that the resistance of the contact part between the cathode film layer and the conductor is large, voltage drop is generated, and the display effect is affected. The inorganic encapsulation layer is also limited by the end of the insulating layer during encapsulation, resulting in problems of deterioration of the protection of the covered inorganic encapsulation layer and easy occurrence of cracks.
Disclosure of Invention
In view of the above, the present application provides a display panel and a method for manufacturing the same, so as to achieve better conduction between the cathode film layer and the conductor and improve the strength of the inorganic encapsulation layer.
The technical scheme adopted by the application is as follows: in one aspect, the present application provides a display panel comprising:
a substrate;
a driving circuit layer located at one side of the substrate;
the anode film layer comprises a plurality of sub anode film layers which are arranged at intervals on one side of the driving circuit layer, which is away from the substrate;
a pixel definition layer is arranged between two adjacent sub-anode film layers;
the conductive layer is arranged on one side of the pixel definition layer, which is away from the substrate;
the insulating layer is arranged on one side, away from the pixel definition layer, of the conducting layer, part of the insulating layer protrudes out of the side edge of the conducting layer, and the insulating layer is a heat-shrinkable structure layer;
an organic light emitting layer disposed on the anode film layer and the pixel defining layer;
the cathode film layer is arranged on the organic light-emitting layer and covers part of the side surface of the conductive layer, and part of the cathode film layer is positioned in a projection area of the insulating layer along the thickness direction of the insulating layer;
and the inorganic packaging layer is arranged on the cathode film layer and the conductive layer.
Optionally, a width of a side of the insulating layer away from the conductive layer is greater than a width of a side of the insulating layer near the conductive layer.
Optionally, the insulating layer has a trapezoid cross section along the thickness direction of the insulating layer, and the width of the insulating layer gradually increases along the direction away from the conductive layer.
Optionally, the side surface of the insulating layer is an inclined surface with an inclination angle of 20-70 degrees.
Optionally, the heat-shrinkable structural layer comprises a heat-shrinkable material comprising antimony, bismuth, gallium, bronze, scF 3 At least one of antimony oxide or fluoride, bismuth oxide or fluoride, gallium oxide or fluoride, bronze oxide or fluoride, and heat-shrinkable polymer material.
Optionally, the heat-shrinkable polymer material comprises at least one of polyvinyl chloride, polyethylene, polypropylene, polyester and silicone rubber.
Optionally, the width of the edge of the insulating layer protruding from the conductive layer is 0.2 μm to 1 μm.
Optionally, the side surface of the conductive layer is an inclined surface.
In another aspect, the present application also provides a method for manufacturing a display panel, including:
providing a substrate;
preparing a driving circuit layer on one side of the substrate;
preparing an anode film layer on one side of the driving circuit layer, which is away from the substrate, and etching the anode film layer to obtain a plurality of sub-anode film layers which are arranged at intervals;
preparing a pixel definition layer between two adjacent sub-anode film layers;
sequentially preparing a conductive layer and an insulating layer on the pixel definition layer, wherein part of the insulating layer protrudes out of the side edge of the conductive layer, and the insulating layer is a heat-shrinkable structure layer;
preparing an organic light-emitting layer on the anode film layer and the pixel definition layer by adopting an evaporation method;
controlling the temperature of the heat-shrinkable structure layer to enable the heat-shrinkable structure layer to shrink and enable part of the heat-shrinkable structure layer to protrude out of the side edge of the conducting layer, and preparing a cathode film layer on the organic light-emitting layer and the conducting layer;
and preparing an inorganic packaging layer on the cathode film layer and the conductive layer.
Optionally, the heat-shrinkable structure layer is subjected to a heat treatment to shrink the heat-shrinkable structure layer before forming the cathode film layer.
Optionally, the film formation angle when the organic light emitting layer is prepared is smaller than the film formation angle when the cathode film layer is prepared.
Optionally, the temperature of the heat-shrinkable structure layer when the organic light-emitting layer is prepared is less than the temperature of the heat-shrinkable structure layer when the cathode film layer is prepared.
Optionally, the width of the heat-shrinkable structure layer protruding out of the side edge of the conductive layer after shrinkage is 0.2-1 μm.
Optionally, sequentially preparing a conductive layer and an insulating layer on the pixel defining layer includes:
covering a pre-conductive layer, a pre-insulating layer and a pre-protective layer which are sequentially stacked on the sub-anode film layer and the pixel definition layer;
carrying out partial dry etching on the pre-protection layer to obtain a protection layer corresponding to the pixel definition layer;
wet etching is carried out on the pre-insulating layer to obtain an insulating layer between the protective layer and the pre-conducting layer;
wet etching is carried out on the pre-conductive layer to obtain a conductive layer positioned between the insulating layer and the pixel definition layer;
and removing the protective layer.
The display panel provided by the application has the beneficial effects that: the display panel provided by the application comprises a substrate, a driving circuit layer, an anode film layer, a pixel definition layer, a conducting layer, an insulating layer, an organic light-emitting layer, a cathode film layer and an inorganic packaging layer, wherein the insulating layer is arranged on the conducting layer and is positioned at one side away from the pixel definition layer, so that the conducting layer can be protected by the insulating layer; meanwhile, part of the insulating layer protrudes out of the side edge of the conductive layer, and it can be understood that the insulating layer can form shielding for at least part of the side surface of the conductive layer; further, the cathode film layer is arranged on the organic light-emitting layer, and the cathode film layer covers part of the side surface of the conductive layer, so that the cathode film layer and the conductive layer can realize conduction, and meanwhile, part of the cathode film layer is positioned in a projection area of the insulating layer along the thickness direction of the insulating layer, namely, part of the cathode film layer is positioned in a shielding area of the insulating layer, so that in the preparation process of the display panel, due to the shielding effect of the insulating layer, an etching process (such as dry etching) after the cathode film layer is formed can not damage the cathode film layer which covers the side surface of the conductive layer and is positioned in the projection area of the insulating layer, thereby ensuring good electrical contact between the cathode film layer and the conductive layer; in addition, the insulating layer is a heat shrinkage structural layer, that is to say, the insulating layer has the characteristic of heat shrinkage, in the preparation process of the display panel, the insulating layer is usually prepared on the conductive layer firstly, then the cathode film layer is prepared on the organic light-emitting layer, the insulating layer can be shrunk by controlling the temperature when preparing the cathode film layer, so that the projection area of the insulating layer on the side surface of the conductive layer is reduced, then the cathode film layer is covered on the side surfaces of the organic light-emitting layer and the conductive layer, and as the projection area is reduced, the area covered on the side surface of the conductive layer by the cathode film layer is enlarged, that is, the contact surface of the cathode film layer and the conductive layer is enlarged, and the effect of electric connection between the cathode film layer and the conductive layer is improved; meanwhile, as the projection area is reduced, the difference between the thickness of the inorganic packaging layer covered on the conductive layer and the thickness of the inorganic packaging layer covered on the cathode film layer is reduced, so that the strength of the inorganic packaging layer is ensured, and the risk of fracture of the inorganic packaging layer is reduced.
The preparation method of the display panel provided by the application has the beneficial effects that: compared with the prior art, the application adopts the heat shrinkage structural layer as the insulating layer, heats the insulating layer by utilizing heat generated during evaporation of the organic light-emitting layer, and causes the insulating layer to generate heat shrinkage, thereby increasing the contact area of the cathode film layer and the conductive layer, reducing the overlap resistance of the cathode film layer and the conductive layer, increasing the coverage area and the coverage thickness of the inorganic packaging layer covered on the conductive layer, and having better protective performance on the display panel, thereby providing better packaging effect.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a display panel before shrinkage of an insulating layer according to an embodiment of the application;
fig. 3 is a schematic structural diagram of a display panel according to an embodiment of the application after the insulating layer is shrunk;
fig. 4 is a schematic diagram showing a comparison between before and after shrinkage of an insulating layer in a display panel according to an embodiment of the application;
fig. 5 is a schematic structural diagram of a display panel according to a second embodiment of the present application, in which a packaging layer is hidden;
fig. 6 is a schematic diagram illustrating a comparison between an insulating layer and a conventional insulating layer in a display panel according to a second embodiment of the present application; fig. 6 (a) is a schematic structural diagram of a conventional insulating layer, and fig. 6 (b) is a schematic structural diagram of an insulating layer in a second embodiment;
FIG. 7 is a schematic diagram of a portion of a display panel according to an embodiment of the application;
fig. 8 is a schematic flow chart of a method for manufacturing a display panel according to an embodiment of the application.
Wherein, each reference sign in the figure:
a substrate 10; a driving circuit layer 11; an anode film layer 12; a pixel definition layer 13; a conductive layer 14; an insulating layer 15; an organic light emitting layer 16; a cathode film layer 17; an inorganic encapsulation layer 18; an organic encapsulation layer 19; a second inorganic encapsulation layer 20; a cover plate 21; and a protective layer 22.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
It will be understood that when an element is referred to as being "mounted" or "disposed" on another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
It is to be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are merely for convenience in describing and simplifying the description based on the orientation or positional relationship shown in the drawings, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus are not to be construed as limiting the application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the application, and the display panel provided by the application will now be described.
An embodiment of the present application provides a display panel, as shown in fig. 1, including:
a substrate 10;
a driving circuit layer 11, the driving circuit layer 11 being located at one side of the substrate;
an anode film layer 12, the anode film layer 12 including a plurality of sub-anode film layers arranged at intervals on a side of the driving circuit layer 11 facing away from the substrate 10;
a pixel definition layer 13, wherein the pixel definition layer 13 is arranged between two adjacent sub-anode film layers;
a conductive layer 14, the conductive layer 14 being disposed on a side of the pixel defining layer 13 facing away from the substrate 10;
the insulating layer 15 is arranged on one side of the conducting layer 14, which is away from the pixel definition layer 13, and part of the insulating layer protrudes out of the side edge of the conducting layer 14 to form an eave structure, and the insulating layer 15 is a heat shrinkage structural layer;
an organic light emitting layer 16, the organic light emitting layer 16 being disposed on the anode film layer 12 and the pixel defining layer 13;
a cathode film layer 17, the cathode film layer 17 being disposed on the organic light emitting layer 16 and covering a part of the side surface of the conductive layer 14, a part of the cathode film layer 17 being located in a projection area of the insulating layer 15 in the thickness direction of the insulating layer 15;
an inorganic encapsulation layer 18, the inorganic encapsulation layer 18 being disposed on the cathode film layer 17 and the conductive layer 14.
In the prior art, in the process of manufacturing a light emitting device by using the photolithography technique, since the whole surface film forming manner is adopted, the organic light emitting layer 16 and the cathode film layer 17 are present above the anode film layer 12 and above the insulating layer 15. However, the insulating layer 15 is necessary to break the organic light emitting layer 16 and the cathode film layer 17 and cover the ends of the cathode layer and the organic light emitting layer to protect them from the subsequent processes (e.g., etching process).
Referring to fig. 2-4, fig. 2 is a schematic structural diagram of the insulating layer before shrinking, fig. 3 is a schematic structural diagram of the insulating layer after shrinking, and fig. 4 is a schematic structural diagram of the insulating layer before and after shrinking in the display panel according to the first embodiment of the present application. L2 is the boundary line of the film formation of the cathode film layer 17, and braun 2 is the film formation angle of the cathode film layer 17. The A1 region is a region where the cathode film layer 17 cannot be deposited due to shielding by the insulating layer 15. The insulating layer 15 is a heat-shrinkable structure layer, that is, the insulating layer 15 has a heat-shrinkable property. In the manufacturing process of the display panel, it is common to first manufacture the insulating layer 15 on the conductive layer 14, then manufacture the cathode film layer 17 on the organic light emitting layer 16, and shrink the insulating layer 15 by controlling the temperature when manufacturing the cathode film layer 17. As shown in fig. 4, when the insulating layer 15 is heated, its end portion is shrunk toward the middle by a distance L, so that the width of the insulating layer 15 protruding from the edge of the conductive layer 14 is narrowed. In the process of preparing the cathode film layer 17, as the film forming angle brane 2 of the cathode film layer 17 is unchanged, the area of the A1 region is reduced, and the contact area of the cathode film layer 17 and the conductive layer 14 is increased, so that the overlap resistance of the cathode film layer 17 and the conductive layer 14 is reduced, and the electric potential on the cathode film layer 17 is consistent with the electric potential provided by the driving circuit layer 11, thereby ensuring good display effect. Further, since the projected area is reduced, the difference between the thickness of the inorganic encapsulation layer 18 covering the conductive layer 14 and the thickness of the inorganic encapsulation layer 18 covering the cathode film layer 17 is reduced, the strength of the inorganic encapsulation layer 18 is increased, cracks are less likely to occur, and a better encapsulation effect can be provided.
In some embodiments of the application, as shown in fig. 2 and 3, the side of the insulating layer 15 is provided as a bevel and the bevel faces towards the side facing away from the conductive layer 14, alternatively the side of the insulating layer 15 may also be provided as a straight surface.
Referring to fig. 5, fig. 5 is a schematic structural diagram of a display panel according to a second embodiment of the application. In some embodiments of the present application, the width of the side of insulating layer 15 remote from conductive layer 14 is greater than the width of the side of insulating layer 15 proximate conductive layer 14.
In some embodiments of the present application, the insulating layer 15 has a trapezoid cross section in the thickness direction thereof, and the width of the insulating layer 15 gradually increases in the direction away from the conductive layer 14.
In other embodiments of the present application, the insulating layer 15 may also have a stepped cross section along its thickness direction, and the width of the insulating layer 15 increases in sequence in a direction away from the conductive layer 14.
Referring to fig. 6, fig. 6 is a schematic diagram illustrating a comparison of the structure of the insulating layer in the display panel according to the second embodiment of the present application and the structure of the insulating layer according to the first embodiment of the present application. In fig. 6 (a), the insulating layer provided in the first embodiment is shown, and it can be seen that the insulating layer provided in the first embodiment is small at the top and large at the bottom (referring to the direction shown in the drawing), and the film forming boundary line L2 of the cathode film 17 is limited by the lower plane end point of the insulating layer 15. Fig. 6 (b) shows an insulating layer 15 in the second embodiment, and it can be seen that the insulating layer 15 has a trapezoidal cross-sectional shape, and the width of the insulating layer 15 gradually increases in a direction away from the conductive layer 14. After the insulating layer 15 provided in the second embodiment of the present application is adopted, the film forming boundary line L2 of the cathode film 17 is also limited by the lower plane end point of the insulating layer 15, but compared with the lower plane end point of the insulating layer 15 in the first embodiment, the distance from the conductive layer 14 is reduced, so that the area of the A1 region is reduced, the contact area between the cathode film 17 and the conductive layer 14 can be further increased, the overlap resistance is reduced, and the display effect is improved.
As shown in fig. 6 (b), the side surface of the insulating layer 15 is provided as an inclined surface inclined to the conductive layer 14 side, so that the limit of the lower plane end point of the insulating layer 15 to the film formation boundary line L2 of the cathode film layer 17 can be reduced, and in the case where the width of the insulating layer 15 protruding from the conductive layer 14 is unchanged, the limit of the lower plane end point of the insulating layer 15 to the film formation boundary line L2 of the cathode film layer 17 is gradually reduced as the inclination angle of the inclined surface (i.e., the angle between the inclined surface and the vertical plane) increases. When the inclination angle of the side surface of the insulating layer 15 is the same as the film forming angle braun 2 of the cathode film layer 17 (i.e. the film forming boundary line L2 of the cathode film layer 17 is located in the plane of the inclined plane), the area of the A1 region is minimized at this time.
In other embodiments of the present application, the inclination angle of the side surface of the insulating layer 15 is larger than the film forming angle of the cathode film 17, and the lower plane end point of the insulating layer 15 does not limit the film forming boundary line L2 of the cathode film 17, so that the area of the A1 region is also minimized.
In some embodiments of the present application, the side surface of the insulating layer 15 is a slope, and the slope angle of the slope is any angle between 20 ° and 70 °, for example, 20 °, 30 °, 40 °, 50 °, 60 °, 70 °, etc., the present application is not limited, and the film forming angle, i.e., the film forming apparatus, 2 may be the same as the slope angle of the slope.
Fig. 7 is a schematic diagram of a portion of an insulating layer in the first embodiment of the present application, where the A1 region is a region where the organic light emitting layer 16 and the cathode film layer 17 cannot be deposited due to shielding of the insulating layer 15, m is a width of the insulating layer 15 protruding from the conductive layer 14, and n is a width of a portion of the conductive layer 14 where the film layer cannot be deposited. According to the sine theorem of the triangular region S1: n/sin (90-2) =m/sin (∂), where n=m×cos (braun 2)/sin (∂) is obtained, where braun 2 is the film forming angle of the cathode film 17, ∂ is the angle between the film forming boundary line of the cathode film 17 and the surface of the conductive layer 14, and since the film forming angle of the cathode film 17, braun 2 is unchanged, the two angle values are unchanged. When the value of m becomes smaller, the value of n becomes smaller, and the width L-n of the region where the cathode film 17 can be deposited becomes larger under the condition that the value of the hypotenuse length L of the conductive layer 14 is unchanged, and in this case, the contact area between the cathode film 17 and the conductive layer 14 is larger, which is more favorable for poor display control.
In some embodiments of the present application, the heat shrink material used for the insulating layer 15 is ScF 3 Scandium trifluoride, scF 3 Has good heat shrinkage performance, and adopts ScF 3 The width of the insulating layer 15 is narrowed after being heated, the limit range (i.e., the A1 region) of the end portion of the insulating layer 15 of the cathode film 17 becomes smaller when being deposited, and more cathode film 17 can be deposited on the conductive layer 14.
In other embodiments of the present application, the insulating layer 15 may also be made of other heat-shrinkable materials, such as antimony, bismuth, gallium, bronze, antimony oxides or fluorides, bismuth oxides or fluorides, gallium oxides or fluorides, and bronze oxides or fluorides, or one or more of heat-shrinkable polymeric materials.
In some embodiments of the present application, the heat shrinkable polymeric material used in the insulating layer 15 is polyvinyl chloride, and in other embodiments of the present application, one or more of polyethylene, polypropylene, polyester, and silicone rubber may be used.
In some embodiments of the present application, the constituent materials of the insulating layer 15 include a non-heat-shrinkable material (e.g., a thermoplastic material) in addition to the heat-shrinkable material, so long as the insulating layer 15 prepared by the heat-shrinkable material and the non-heat-shrinkable material is ensured to have a heat-shrinkable function.
In some embodiments of the present application, the width of the insulating layer 15 protruding from the conductive layer 14 is any value between 0.2 μm and 1 μm, for example, may be 0.3 μm, 0.5 μm, 0.8 μm, 1 μm, etc., and the present application is not limited thereto. If the width of the protrusion of the insulating layer 15 is too small, the cathode film 17 cannot be disconnected, and if the width of the protrusion of the insulating layer 15 is too large, the connection area between the cathode film 17 and the conductive layer 14 is too small, which affects the conductivity. By limiting the width of the protrusion of the insulating layer 15 to this range, the connection area between the cathode film 17 and the conductive layer 14 can be increased as much as possible while ensuring disconnection of the cathode film 17, and the overlap resistance between the cathode film 17 and the conductive layer 14 can be reduced.
In some embodiments of the present application, the side of the conductive layer 14 is a slope inclined to the side of the insulating layer 15, and the connection between the cathode film 17 and the conductive layer 14 is located on the slope.
In some embodiments of the present application, as shown in fig. 3, the side surface of the conductive layer 14 is a slope inclined to one side of the insulating layer 15, and the connection between the cathode film 17 and the conductive layer 14 is located on the slope. By providing the side of the conductive layer 14 with a bevel, the deposition of the cathode film layer 17 on the conductive layer 14 can be facilitated. In other embodiments of the present application, the side surface of the conductive layer 14 is configured as a concave curved surface, and in other embodiments of the present application, the side surface of the conductive layer 14 may be configured in other forms, which is not limited by the present application.
In some embodiments of the present application, the organic light emitting layer 16 is not connected to the conductive layer 14, and in other embodiments of the present application, the organic light emitting layer 16 may be connected to the conductive layer 14, which is not limited by the present application.
In some embodiments of the present application, as shown in fig. 1, the display panel further includes an organic encapsulation layer 19, and a second inorganic encapsulation layer 20, the organic encapsulation layer 19 being disposed on a side of the inorganic encapsulation layer 18 and the insulating layer 15 away from the substrate 10, and the second inorganic encapsulation layer 20 being disposed on a side of the organic encapsulation layer 19 away from the substrate 10.
In some embodiments of the present application, the inorganic encapsulation layer 18 and the second inorganic encapsulation layer 20 may be silicon nitride. In other embodiments of the present application, the inorganic encapsulation layer 18 and the second inorganic encapsulation layer 20 may also be silicon oxide, silicon oxynitride, a stacked combination of the above materials, or the like, which is not limited by the present application.
In some embodiments of the present application, the organic encapsulation layer 19 is made of an epoxy-based polymer, such as epoxy, and in other embodiments of the present application, the organic encapsulation layer 19 may be made of other materials, which is not limited by the present application.
In other embodiments of the present application, the encapsulation of the display panel may also be achieved by using the cover plate 21 instead of the inorganic encapsulation layer 18, the organic encapsulation layer 19, and the second inorganic encapsulation layer 20. Alternatively, the cover 21 may be made of glass, resin or other materials, which is not limited by the present application.
In some embodiments of the present application, as shown in fig. 1, the inorganic encapsulation layer 18, the organic encapsulation layer 19, the second inorganic encapsulation layer 20, and the cover plate 21 may be used together to encapsulate the display panel. As shown in fig. 1, the inorganic encapsulation layer 18, the organic encapsulation layer 19, the second inorganic encapsulation layer 20, and the cap plate 21 are sequentially disposed in a direction away from the substrate 10.
Referring to fig. 8, an embodiment of the application further provides a method for manufacturing a display panel, including the following steps:
providing a substrate 10;
preparing a driving circuit layer 11 on one side of a substrate 10;
preparing an anode film layer 12 on one side of the driving circuit layer 11, which is far away from the substrate 10, and etching the anode film layer 12 to obtain a plurality of sub-anode film layers which are arranged at intervals;
preparing a pixel defining layer 13 between two adjacent sub-anode film layers;
sequentially preparing a conductive layer 14 and an insulating layer 15 on the pixel definition layer 13, wherein part of the insulating layer 15 protrudes out of the side edge of the conductive layer 14, and the insulating layer 15 is a heat-shrinkable structure layer;
an organic light emitting layer 16 is prepared on the anode film layer 12 and the pixel defining layer 13 by an evaporation method;
controlling the temperature of the heat-shrinkable structure layer so that the heat-shrinkable structure layer shrinks and a part of the heat-shrinkable structure layer protrudes from the side edge of the conductive layer 14, and preparing a cathode film layer 17 on the organic light-emitting layer 16 and the conductive layer 14;
an inorganic encapsulation layer 18 is prepared on the cathode film layer 17 and the conductive layer 14.
By adopting the preparation method provided by the application, heat is generated in the process of evaporating the organic light-emitting layer 16, the insulating layer 15 can be heated by utilizing the heat generated in the process of evaporating the organic light-emitting layer 16, so that the insulating layer 15 is subjected to thermal contraction, and part of the contracted insulating layer 15 still protrudes out of the side edge of the conducting layer 14, so that the projection area of the insulating layer 15 on the side surface of the conducting layer 14 is reduced on the premise of ensuring that the organic light-emitting layer 16 and the cathode film layer 17 are disconnected, and the area covered by the cathode film layer 17 on the side surface of the conducting layer 14 is enlarged due to the reduction of the projection area, namely the contact area between the cathode film layer 17 and the conducting layer 14 is enlarged, and the effect of electrically connecting the cathode film layer 17 and the conducting layer 14 is improved; meanwhile, as the projection area is reduced, the difference between the thickness of the inorganic encapsulation layer 18 covered on the conductive layer 14 and the thickness of the inorganic encapsulation layer 18 covered on the cathode film layer 17 is reduced, so that the strength of the inorganic encapsulation layer 18 is ensured, and the risk of fracture of the inorganic encapsulation layer 18 is reduced.
In some embodiments of the present application, the driving circuit layer 11 includes a TFT (thin film transistor) stack, an IC (integrated circuit), an FPC (flexible circuit board). In other embodiments of the present application, the driving circuit layer 11 may have other structures as long as the driving voltage can be provided to the organic light emitting layer 16. In the present embodiment, the driving circuit layer 11 is fabricated on the substrate 10 by a photolithography method, and in other embodiments of the present application, other methods may be employed, which is not limited to the present application.
In some embodiments of the present application, as shown in fig. 8, preparing a pixel defining layer between two adjacent sub-anode film layers specifically includes: a pixel defining layer 13 is formed on the anode film layer 12, the pixel defining layer 13 is exposed and developed so that the pixel defining layer 13 forms a pixel opening over each sub-anode film layer, and the pixel defining layer 13 covers the edges of the sub-anode film layers.
In this embodiment, the anode film layer 12 is made of aluminum, and in other embodiments of the present application, silver and its oxide, ITO (indium tin oxide), IZO (indium zinc oxide), a stack of metal and ITO, or a stack of metal and IZO may be used. The anode film layer 12 may be deposited on the driving circuit layer 11 by evaporation plating or sputtering plating.
In this embodiment, the pixel defining layer 13 is a PR (photoresist), and in other embodiments of the present application, the pixel defining layer 13 may be an inorganic thin film, such as silicon nitride, silicon oxide, silicon oxynitride, etc.
In some embodiments of the present application, the cathode film 17 may be formed on the surface of the organic light emitting layer 16 and the conductive layer 14 by an evaporation coating process, and in other embodiments of the present application, the cathode film 17 may be formed by a vacuum sputtering coating or other processes, which is not limited in the present application.
In some embodiments of the present application, in order to ensure that the thermal shrinkage of the insulating layer 15 is satisfactory, the insulating layer 15 is heated before the cathode film layer 17 is formed after the evaporation of the organic light emitting layer 16, so as to ensure that the insulating layer 15 has sufficient heat accumulation to achieve the optimal thermal shrinkage.
In some embodiments of the present application, the display panel may be placed on a heating stage for heating after the evaporation of the organic light emitting layer 16. The contact surface may be the surface of the insulating layer 15 or the surface facing away from the insulating layer 15 (i.e., the surface of the substrate 10).
In some embodiments of the present application, the temperature of the insulating layer 15 when the organic light emitting layer 16 is prepared is less than the temperature of the insulating layer 15 when the cathode film layer 17 is prepared. By controlling the temperature of the insulating layer 15, the organic light-emitting layer 16 can be made to cover as little of the conductive layer 14 as possible, while the cathode film layer 17 covers as much of the conductive layer 14 as possible.
In some embodiments of the present application, the insulating layer 15 has a width of 0.2 μm to 1 μm protruding from the side of the conductive layer 14 after heat shrinkage. In this range, on the premise of ensuring disconnection of the cathode film 17, the connection area between the cathode film 17 and the conductive layer 14 can be increased as much as possible, and the overlap resistance between the cathode film 17 and the conductive layer 14 can be reduced.
In some embodiments of the present application, as shown in fig. 5, L1 is a film forming boundary line of the organic light emitting layer 16, braun 1 is a film forming angle (i.e. evaporation angle) of the organic light emitting layer 16, L2 is a film forming boundary line of the cathode film layer 17, and braun 2 is a film forming angle of the cathode film layer 17. When preparing the organic light emitting layer 16 and the cathode film layer 17, branst 1 < branst 2 is controlled (the film forming angle can be controlled by adjusting the evaporation equipment), so that the coverage area of the cathode film layer 17 is larger than that of the organic light emitting layer 16, and the organic light emitting layer 16 is prevented from influencing the connection of the cathode film layer 17 and the conductive layer 14.
In some embodiments of the present application, referring to fig. 8, sequentially preparing the conductive layer 14 and the insulating layer 15 on the pixel defining layer 13 specifically includes:
covering a pre-conductive layer, a pre-insulating layer and a pre-protective layer which are sequentially stacked on the sub-anode film layer and the pixel definition layer 13;
carrying out partial dry etching on the pre-protective layer to obtain a protective layer 22 corresponding to the pixel definition layer 13;
wet etching the pre-insulating layer to obtain an insulating layer 15 between the protective layer 22 and the pre-conductive layer;
wet etching is carried out on the pre-conductive layer to obtain a conductive layer 14 positioned between the insulating layer 15 and the pixel definition layer 13;
the protective layer 22 is then removed.
In some embodiments of the present application, the pre-conductive layer may be a metal such as molybdenum, aluminum, nickel, silver, or a stack of one or more of them, or an oxide, alloy, or the like, and the present application is not limited thereto.
In some embodiments of the present application, the pre-conductive layer may be deposited on the anode film layer 12 and the pixel defining layer 13 by PVD (physical vapor deposition) method, for example: vacuum evaporation coating, vacuum sputtering coating and vacuum ion coating.
In some embodiments of the present application, the pre-insulating layer may be deposited on the pre-conductive layer by chemical vapor deposition if an inorganic material is used, and may be coated on the pre-conductive layer by spraying if an organic material is used.
In some embodiments of the present application, the protective layer 22 may be a PR (photoresist) layer, and the removal of the PR layer may be performed by a removal method commonly used in the art, which is not limited by the present application.
The foregoing description of the preferred embodiments of the application is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the application.
Claims (10)
1. A display panel, comprising:
a substrate;
a driving circuit layer located at one side of the substrate;
the anode film layer comprises a plurality of sub anode film layers which are arranged at intervals on one side of the driving circuit layer, which is away from the substrate;
a pixel definition layer is arranged between two adjacent sub-anode film layers;
the conductive layer is arranged on one side of the pixel definition layer, which is away from the substrate;
the insulating layer is arranged on one side, away from the pixel definition layer, of the conducting layer, part of the insulating layer protrudes out of the side edge of the conducting layer, and the insulating layer is a heat-shrinkable structure layer;
an organic light emitting layer disposed on the anode film layer and the pixel defining layer;
the cathode film layer is arranged on the organic light-emitting layer and covers part of the side surface of the conductive layer, and part of the cathode film layer is positioned in a projection area of the insulating layer along the thickness direction of the insulating layer;
and the inorganic packaging layer is arranged on the cathode film layer and the conductive layer.
2. The display panel according to claim 1, wherein a width of a side of the insulating layer away from the conductive layer is larger than a width of a side of the insulating layer close to the conductive layer.
3. The display panel according to claim 2, wherein a cross section of the insulating layer in a thickness direction of the insulating layer is trapezoidal, and a width of the insulating layer is gradually increased in a direction away from the conductive layer.
4. A display panel according to claim 3, wherein the side surface of the insulating layer is an inclined surface having an inclination angle of 20 ° to 70 °.
5. The display panel of any one of claims 1 to 4, wherein the heat shrink structure layer comprises a heat shrink material comprising antimony, bismuth, gallium, bronze, scF 3 At least one of an oxide or fluoride of antimony, an oxide or fluoride of bismuth, an oxide or fluoride of gallium, an oxide or fluoride of bronze, and a heat-shrinkable polymer material; optionally, the heat-shrinkable polymer material comprises polyvinyl chloride, polyethylene, polypropylene, polyester and silicone rubberAt least one of (a) and (b).
6. The display panel according to any one of claims 1 to 4, wherein a width of an edge of the insulating layer protruding from the conductive layer is 0.2 μm to 1 μm; and/or the side surface of the conductive layer is an inclined surface.
7. A method for manufacturing a display panel, comprising:
providing a substrate;
preparing a driving circuit layer on one side of the substrate;
preparing an anode film layer on one side of the driving circuit layer, which is away from the substrate, and etching the anode film layer to obtain a plurality of sub-anode film layers which are arranged at intervals;
preparing a pixel definition layer between two adjacent sub-anode film layers;
sequentially preparing a conductive layer and an insulating layer on the pixel definition layer, wherein part of the insulating layer protrudes out of the side edge of the conductive layer, and the insulating layer is a heat-shrinkable structure layer;
preparing an organic light-emitting layer on the anode film layer and the pixel definition layer by adopting an evaporation method;
controlling the temperature of the heat-shrinkable structure layer to enable the heat-shrinkable structure layer to shrink and enable part of the heat-shrinkable structure layer to protrude out of the side edge of the conducting layer, and preparing a cathode film layer on the organic light-emitting layer and the conducting layer;
and preparing an inorganic packaging layer on the cathode film layer and the conductive layer.
8. The method of manufacturing a display panel according to claim 7, wherein the heat-shrinkable structure layer is heat-treated to shrink the heat-shrinkable structure layer before forming the cathode film layer; and/or the film forming angle when preparing the organic light emitting layer is smaller than the film forming angle when preparing the cathode film layer; and/or the temperature of the heat-shrinkable structure layer when the organic light-emitting layer is prepared is less than the temperature of the heat-shrinkable structure layer when the cathode film layer is prepared.
9. The method of manufacturing a display panel according to claim 7, wherein the width of the heat-shrinkable structure layer protruding from the side of the conductive layer after shrinkage is 0.2 μm to 1 μm.
10. The method of manufacturing a display panel according to claim 7, wherein sequentially manufacturing a conductive layer and an insulating layer on the pixel defining layer comprises:
covering a pre-conductive layer, a pre-insulating layer and a pre-protective layer which are sequentially stacked on the sub-anode film layer and the pixel definition layer;
carrying out partial dry etching on the pre-protection layer to obtain a protection layer corresponding to the pixel definition layer;
wet etching is carried out on the pre-insulating layer to obtain an insulating layer between the protective layer and the pre-conducting layer;
wet etching is carried out on the pre-conductive layer to obtain a conductive layer positioned between the insulating layer and the pixel definition layer;
and removing the protective layer.
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