CN116364704A - Capacitor structure and forming method thereof - Google Patents
Capacitor structure and forming method thereof Download PDFInfo
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- CN116364704A CN116364704A CN202111603576.3A CN202111603576A CN116364704A CN 116364704 A CN116364704 A CN 116364704A CN 202111603576 A CN202111603576 A CN 202111603576A CN 116364704 A CN116364704 A CN 116364704A
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- 238000000034 method Methods 0.000 title claims abstract description 59
- 239000003990 capacitor Substances 0.000 title claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 61
- 230000004048 modification Effects 0.000 claims abstract description 33
- 238000012986 modification Methods 0.000 claims abstract description 33
- 239000012495 reaction gas Substances 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 159
- 230000004888 barrier function Effects 0.000 claims description 53
- 229910052751 metal Inorganic materials 0.000 claims description 41
- 239000002184 metal Substances 0.000 claims description 41
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 34
- 239000012790 adhesive layer Substances 0.000 claims description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 16
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
Abstract
A capacitor structure and method of forming the same, wherein the method comprises: forming a first polar plate structure, wherein the first polar plate structure comprises a first region and a second region, and the surface of the first region is lower than that of the second region; performing modification treatment to enable the material on the surface of the first polar plate structure to react with the reaction gas of the modification treatment so as to form a first dielectric film; forming a second dielectric film on the surface of the first dielectric film; a second plate structure is formed on the surface of the second dielectric film on the first region. Thereby improving the capacitance performance and reliability of the capacitor structure.
Description
Technical Field
The present disclosure relates to semiconductor manufacturing, and more particularly, to a capacitor structure and a method for forming the same.
Background
Capacitors have found wide application in radio frequency integrated circuits. Currently, capacitors in semiconductor devices can be broadly divided into, by structure: PIP (polysilicon-insulator-polysilicon) capacitors and MIM (metal-insulator-metal) capacitors. The MIM capacitor is widely used because the parasitic capacitance and the contact resistance between the two electrodes can be effectively reduced by using metal as the two electrodes.
With the development of integrated circuits, higher demands are being made on capacitance and capacitance density, and thus, there is a need to increase capacitance and increase capacitance density. In the prior art, in order not to affect the capacitance density, the purpose of increasing the capacitance is generally achieved by reducing the film thickness of the dielectric layer (i.e., the insulator) of the MIM capacitor. However, too thin a dielectric layer tends to result in a large leakage current in the MIM capacitor on the one hand, and in a MIM capacitor that is prone to breakdown on the other hand, resulting in poor capacitance performance and reliability of the MIM capacitor.
Disclosure of Invention
The invention solves the technical problem of providing a capacitor structure and a forming method thereof so as to improve the performance and the reliability of the capacitor.
In order to solve the above technical problems, the technical solution of the present invention provides a capacitor structure, including: a first plate structure including a first region and a second region, the surface of the first region being lower than the surface of the second region, the surface of the first plate structure having a first dielectric film; a second dielectric film on a surface of the first dielectric film; and a second electrode plate structure positioned on the surface of the second dielectric film on the first region.
Optionally, the material of the first dielectric film contains one or both of oxygen element and nitrogen element.
Optionally, a film thickness ratio of the second dielectric film to the first dielectric film is within 35 to 39.
Optionally, the first plate structure includes: the first plate metal layer, the first bonding layer on the first plate metal layer, and the first barrier layer on the first bonding layer of the second region, the first barrier layer exposing the first bonding layer surface of the first region.
Optionally, the material of the first barrier layer includes titanium nitride, the material of the first adhesion layer includes titanium, and the material of the first dielectric film includes one or both of titanium oxide and titanium nitride.
Optionally, the first plate structure further includes: a second barrier layer under the first plate metal layer, and a second adhesive layer under the second barrier layer.
Correspondingly, the technical scheme of the invention provides a method for forming a capacitor structure, which comprises the following steps: forming a first polar plate structure, wherein the first polar plate structure comprises a first region and a second region, and the surface of the first region is lower than that of the second region; performing modification treatment to enable the material on the surface of the first polar plate structure to react with the reaction gas of the modification treatment so as to form a first dielectric film; forming a second dielectric film on the surface of the first dielectric film; a second plate structure is formed on the surface of the second dielectric film on the first region.
Optionally, the reaction gas of the modification treatment contains one or all of oxygen and nitrogen, and the material of the first dielectric film contains one or all of oxygen and nitrogen.
Optionally, the reaction gas of the modification treatment includes one or both of oxygen and nitrogen oxide gas.
Optionally, the modification treatment includes a heat treatment.
Optionally, the temperature of the heat treatment is in the range of 250 ℃ to 280 ℃.
Optionally, the process parameters of the modification treatment further include: the duration ranges from 80 seconds to 120 seconds.
Optionally, the first plate structure includes: the first bonding layer is positioned on the first polar plate metal layer, and the first blocking layer is positioned on the first bonding layer of the second region, the first blocking layer exposes the surface of the first bonding layer of the first region, and the surface of the first bonding layer of the first region is the surface of the first region.
Optionally, the material of the first barrier layer includes titanium nitride, the material of the first adhesion layer includes titanium, and the material of the first dielectric film includes one or both of titanium oxide and titanium nitride.
Optionally, the method for forming the first polar plate structure includes: forming an initial first plate structure, wherein the initial first plate structure comprises a first plate metal layer, a first bonding layer positioned on the first plate metal layer, and an initial first barrier layer positioned on the first bonding layer; forming a mask layer on the surface of the initial first barrier layer of the second region, wherein the mask layer exposes the surface of the initial first barrier layer of the first region; and etching the initial first barrier layer by taking the mask layer as a mask until the surface of the first bonding layer of the first region is exposed.
Optionally, the process of forming the second dielectric film includes a chemical vapor deposition process.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
in the method for forming the capacitor structure provided by the technical scheme of the invention, modification treatment is carried out, so that the material on the surface of the first polar plate structure reacts with the reaction gas of the modification treatment, and the conversion property is the first dielectric film. Through modification treatment, a first dielectric film with large forbidden bandwidth and good interface quality can be formed, so that the second dielectric layer with thinner film thickness can be formed to increase capacitance, leakage current in the capacitance structure can be reduced, breakdown risk of the capacitance structure can be reduced, and capacitance performance and reliability of the capacitance structure can be improved.
Further, since one or both of the oxygen element and the nitrogen element are contained in the reaction gas of the modification treatment, the first dielectric film containing one or both of the oxygen element and the nitrogen element in the material can be formed by diffusing one or both of the oxygen element and the nitrogen element into the surface layer of the first electrode plate structure, and thus, the formation of the first dielectric film having a large forbidden bandwidth can be realized.
Further, the modification treatment includes a heat treatment. The heat treatment can help to realize the reaction of the material on the surface of the first polar plate structure and the reaction gas of the modification treatment, and meanwhile, the interface quality of the first dielectric film can be further improved through the heat treatment, so that the capacitance performance and the reliability of the capacitance structure are better improved.
Drawings
Fig. 1 to fig. 7 are schematic structural diagrams illustrating steps in a method for forming a capacitor structure according to an embodiment of the invention.
Detailed Description
As described in the background, in order not to affect the capacitance density, the purpose of increasing the capacitance is typically achieved by reducing the film thickness of the dielectric layer (i.e., the insulator) of the MIM capacitor. However, too thin a dielectric layer tends to result in a large leakage current in the MIM capacitor on the one hand, and in a MIM capacitor that is prone to breakdown on the other hand, resulting in poor capacitance performance and reliability of the MIM capacitor.
In order to solve the technical problems, the technical scheme of the invention provides a capacitor structure and a forming method thereof, wherein the material on the surface of a first polar plate structure is subjected to modification treatment to react with reaction gas of the modification treatment to form a first dielectric film, so that the capacitance performance and the reliability of the formed capacitor structure can be improved.
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 1 to fig. 7 are schematic structural diagrams illustrating steps in a method for forming a capacitor structure according to an embodiment of the invention.
Referring to fig. 1, a substrate 100 is provided.
In this embodiment, the substrate 100 includes a device layer (not shown), a conductive layer (not shown), and an interlayer dielectric layer (not shown) surrounding the device layer and the conductive layer. The device layer includes a number of device structures (not shown). The device structure includes one or more combinations of transistors, diodes, transistors, capacitors, inductors, and conductive structures.
Next, a first plate structure is formed on the substrate 100. The specific steps for forming the first plate structure are shown in fig. 2 to 4.
Referring to fig. 2, an initial first plate structure 110 is formed on the substrate 100.
The initial first plate structure 110 includes a first region a and a second region B.
In this embodiment, the initial first plate structure 110 includes: a first plate metal layer 111, a first adhesive layer 112 on the first plate metal layer 111, and an initial first barrier layer 113 on the first adhesive layer 112.
In this embodiment, the materials of the first plate metal layer 111 include: at least one of aluminum and copper.
In this embodiment, the first adhesive layer 112 is used to increase the adhesion between the first plate structure and the second plate structure formed later, so as to fix the second plate structure more firmly.
In this embodiment, the material of the first adhesive layer 112 includes titanium.
In this embodiment, the initial first barrier layer 113 provides material for the subsequent formation of the first barrier layer. The material of the initial first barrier layer 113 includes titanium nitride.
In this embodiment, the initial first plate structure 110 further includes: a second barrier layer 114 under the first plate metal layer 111, and a second adhesive layer 115 under the second barrier layer 114.
The second barrier layer 114 is used to prevent electromigration between the first plate metal layer 111 and the substrate 100, and reduce contact resistance between the first plate metal layer 111 and the substrate 100.
Specifically, the bottom surface of the first plate metal layer 111 is spaced from the silicon oxide in the substrate 100 by the second barrier layer 114, so that the bottom surface of the first plate metal layer 111 can be prevented from contacting the silicon oxide material in the substrate 100 to form a high-resistance state. Further, electromigration between the first plate metal layer 111 and the substrate 100 is reduced, and contact resistance between the first plate metal layer 111 and the substrate 100 is reduced.
In this embodiment, the material of the second barrier layer 114 includes titanium nitride.
The second adhesive layer 115 is used to increase the adhesion between the substrate 100 and the first plate structure formed later, so as to more firmly fix the first plate structure.
In this embodiment, the material of the second adhesive layer 115 includes titanium.
In this embodiment, the process of forming the initial first plate structure 110 includes a chemical vapor deposition process.
In this embodiment, the initial first plate structure 110 is formed by sequentially depositing the materials of the second adhesive layer 115, the second barrier layer 114, the first plate metal layer 111, the first adhesive layer 114, and the initial first barrier layer 115 on the substrate 100.
In other embodiments, the process of forming the initial first plate structure may also include an electroplating process or the like.
Referring to fig. 3, a mask layer 120 is formed on the surface of the initial first barrier layer 113 in the second region B, and the mask layer 120 exposes the surface of the initial first barrier layer 113 in the first region a.
In this embodiment, the material of the mask layer 120 includes photoresist.
Referring to fig. 4, the initial first barrier layer 113 is etched using the mask layer 120 as a mask until the surface of the first adhesive layer 112 in the first region a is exposed, so as to form a first barrier layer 131.
The first barrier layer 131 is used to space the top surface of the first plate metal layer 111 from the silicon oxide material formed in the subsequent process, so as to prevent the top surface of the first plate metal layer 111 from contacting with the silicon oxide material to form a high-resistance state. Therefore, electromigration between the first polar plate metal layer 111 and other dielectric layers and device structures formed in the subsequent process is reduced, and contact resistance between the first polar plate metal layer 111 and other dielectric layers and device structures formed in the subsequent process is reduced.
The material of the first barrier layer 131 includes titanium nitride.
Thereby, a first plate structure 130 is formed, the first plate structure 130 comprising a first region a and a second region B, the surface of the first region a being lower than the surface of the second region B.
Specifically, the first plate structure 130 includes: the first plate metal layer 111, the first adhesive layer 112 on the first plate metal layer 111, and the first barrier layer 131 on the first adhesive layer 112 of the second region B, the first barrier layer 131 exposing the surface of the first adhesive layer 112 of the first region a.
In this embodiment, the first plate structure 130 further includes: a second barrier layer 114 under the first plate metal layer 111, and a second adhesive layer 115 under the second barrier layer 114.
In this embodiment, the process of etching the initial first barrier layer 113 includes one or both of a dry etching process and a wet etching process.
In this embodiment, after the first plate structure 130 is formed, the mask layer 120 is removed.
Referring to fig. 5, a modification process is performed to react the material on the surface of the first plate structure 130 with the reaction gas of the modification process to form a first dielectric film 140.
Through the modification treatment, the first dielectric film 140 with large forbidden band width and good interface quality can be formed, so that the leakage current in the capacitor structure can be reduced and the breakdown risk of the capacitor structure can be reduced while the second dielectric layer with thinner film thickness is formed subsequently to increase the capacitance, and the capacitance performance and reliability of the capacitor structure are improved.
Since the material passing through the surface of the first plate structure 130 reacts with the reaction gas of the modification process to form the first dielectric film 140, the first plate structure 170 is formed based on the first plate structure 130 while the first dielectric film 140 is formed.
Accordingly, the first plate structure 170 includes a first region a and a second region B, the surface of the first region a is lower than the surface of the second region B, and the surface of the first plate structure 170 has the first dielectric film 140.
Specifically, the first plate structure 170 is composed of the first plate metal layer 111, the first adhesive layer 171 (the unreacted first adhesive layer 112), the first barrier layer 172 (the unreacted first barrier layer 131), the second barrier layer 114, and the second adhesive layer 115.
In this embodiment, the reaction gas of the modification treatment contains one or both of an oxygen element and a nitrogen element. Accordingly, the material of the first dielectric film 140 includes one or both of oxygen and nitrogen.
Since one or all of the oxygen element and the nitrogen element is contained in the reaction gas, one or all of the oxygen and the nitrogen element is diffused to the surface layer of the first plate structure 130, and thus, the first dielectric film 140 containing one or all of the oxygen element and the nitrogen element in the material can be formed to realize formation of the first dielectric film 140 having a large forbidden bandwidth.
Specifically, the reaction gas of the modification treatment includes: oxygen, or a nitrogen oxide gas, or a combination of oxygen and a nitrogen oxide gas.
Accordingly, the material of the first dielectric film 140 includes one or both of titanium oxide and titanium nitride.
Specifically, the modification treatment method comprises the following steps: and (3) introducing a reaction gas into the reaction cavity, and performing heat treatment.
The heat treatment is performed for the purpose of: helping to achieve reaction of the material of the surface of the first plate structure 130 with the reactant gases of the modification process.
Specifically, by the heat treatment, titanium contained in the material of the surface of the first plate structure 130 reacts with oxygen or nitrogen in the reaction gas to form titanium oxide or titanium nitride.
Furthermore, by means of heat treatment, the interface quality of the first dielectric film 140 can be further improved, so that the capacitance performance and reliability of the capacitance structure can be better improved.
In this example, the temperature range of the heat treatment is 250℃to 280 ℃. In this temperature range, oxygen and nitrogen in the oxygen gas and the nitrogen oxide gas diffuse slowly in the surface layer of the first electrode structure 130, and therefore, the first dielectric film 140 can be formed to be thin and have smaller film thickness variation. The thinner first dielectric film 140 better reduces the influence of the formation of the first dielectric film 140 on the conductive performance of the first plate structure 130, so that the first plate structure 130 has good conductivity, and thus, the first plate structure 130 can be better electrically connected with the conductive structure formed later. The film thickness deviation of the first dielectric film 140 is smaller, so that the quality of the first dielectric film 140 is stable, and the reliability of the capacitor structure is improved.
In this embodiment, the process parameters of the modification treatment further include: the duration ranges from 80 seconds to 120 seconds.
Too long a modification treatment may form too thick first dielectric film 140, which greatly affects the conductivity of the first plate structure 130, and is not beneficial to the electrical connection with the conductive structure. Too short a time for the modification treatment may form the first dielectric film 140 too thin, which makes it difficult for the first dielectric film 140 to block the leakage current well and reduce the risk of breakdown of the capacitor structure. Therefore, the modification treatment is performed within a suitable time period range, that is, in the case that the time period range is 80 seconds to 120 seconds, the conductivity of the first plate structure 130 and the blocking capability of the first dielectric film 140 to the leakage current can be better considered, and the risk of breakdown of the capacitor structure is better reduced.
Referring to fig. 6, a second dielectric film 150 is formed on the surface of the first dielectric film 140.
By forming the second dielectric film 150 to be thinner, the capacitance value of the capacitor structure can be increased. Meanwhile, by forming the first dielectric film 140, increased leakage current and risk of breakdown of the capacitor structure can be effectively improved when forming the thinner second dielectric film 150. Thus, the capacitance performance and reliability can be improved while the capacitance is increased.
In this embodiment, the process of forming the second dielectric film 150 includes: chemical deposition process.
In this embodiment, the material of the second dielectric film 150 includes silicon oxide.
It is to be understood that although the material of the first dielectric film 140 and the material of the second dielectric film 150 each include silicon oxide, the first dielectric film 140 formed by the above-described modification process has a larger forbidden bandwidth and better interface quality than the second dielectric film 150 formed by the chemical deposition process.
In the present embodiment, the ratio of the film thickness of the second dielectric film 150 to that of the first dielectric film 140 is within 35 to 39. Therefore, the capacitance value, the capacitance performance and the reliability of the capacitance structure can be better simultaneously considered.
Preferably, the second dielectric film 150 has a film thickness of 370 angstroms.
Referring to fig. 7, a second electrode structure 160 is formed on the surface of the second dielectric film 150 on the first region a.
In this embodiment, the second plate structure 160 includes: a second plate metal layer 161, and a third barrier layer 162 on the top surface of the second plate metal layer 161.
In this embodiment, the method for forming the second diode board structure 160 includes: forming a second electrode plate structure material layer (not shown) on the surface of the second dielectric film 150; forming a second mask layer (not shown) on the surface of the second plate structure material layer of the first region a, wherein the second mask layer exposes the surface of the second plate structure material layer of the second region B; and etching the second electrode plate structure material layer by taking the second mask layer as a mask until the surface of the second dielectric film 150 is exposed.
In this embodiment, the process of forming the second electrode plate structure material layer includes a chemical vapor deposition process. In other embodiments, the process of forming the second electrode plate structure material layer may also include an electroplating process or the like.
In this embodiment, the process of etching the second electrode plate structure material layer includes at least one of a dry etching process and a wet etching process.
In this embodiment, the material of the second mask layer includes photoresist.
In this embodiment, after the second electrode plate structure 160 is formed, the second mask layer is removed.
In this embodiment, after the second plate structure 160 is formed, the first dielectric film 140 and the second dielectric film 150 of the second region B are etched until the surface of the first plate structure 170 is exposed, so as to form a conductive opening (not shown) in the first dielectric film 140 and the second dielectric film 150 of the second region B, and then, a conductive structure contacting the surface of the first plate structure 170 is formed in the conductive opening.
Accordingly, an embodiment of the present invention further provides a capacitor structure formed by the above method, please continue to refer to fig. 7, which includes: a first plate structure 170, the first plate structure 170 comprising a first region a and a second region B, the surface of the first region a being lower than the surface of the second region B, the surface of the first plate structure 170 having a first dielectric film 140; a second dielectric film 150 located on the surface of the first dielectric film 140; a second plate structure 160 located on the surface of the second dielectric film 150 on the first region a.
In this embodiment, the first plate structure 170 includes: a first plate metal layer 111, a first adhesive layer 171 on the first plate metal layer 111, and a first barrier layer 172 on the first adhesive layer 171 of the second region B, the first barrier layer 172 exposing a surface of the first adhesive layer 171 of the first region a.
In this embodiment, the material of the first plate metal layer 111 includes at least one of aluminum and copper, the material of the first barrier layer 172 includes titanium nitride, the material of the second barrier layer 114 includes titanium nitride, the material of the first adhesion layer 171 includes titanium, and the material of the second adhesion layer 115 includes titanium.
In this embodiment, the first plate structure 170 further includes: a second barrier layer 114 under the first plate metal layer 111, and a second adhesive layer 115 under the second barrier layer 114.
In this embodiment, the material of the first dielectric film 140 contains one or both of oxygen and nitrogen. Specifically, the material of the first dielectric film 140 includes one or both of titanium oxide and titanium nitride.
In this embodiment, the material of the second dielectric film 150 includes silicon oxide.
In the present embodiment, the ratio of the film thickness of the second dielectric film 150 to that of the first dielectric film 140 is within 35 to 39. Therefore, the capacitance value, the capacitance performance and the reliability of the capacitance structure can be better simultaneously considered.
Preferably, the second dielectric film 150 has a film thickness of 370 angstroms.
In this embodiment, the second plate structure 160 includes: a second plate metal layer 161, and a third barrier layer 162 on the top surface of the second plate metal layer 161.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.
Claims (16)
1. A capacitor structure, comprising:
a first plate structure including a first region and a second region, the surface of the first region being lower than the surface of the second region, the surface of the first plate structure having a first dielectric film;
a second dielectric film on a surface of the first dielectric film;
and a second electrode plate structure positioned on the surface of the second dielectric film on the first region.
2. The capacitive structure of claim 1, wherein the material of the first dielectric film comprises one or both of an oxygen element and a nitrogen element.
3. The capacitive structure of claim 1, wherein a film thickness ratio of the second dielectric film to the first dielectric film is within a range of 35 to 39.
4. The capacitive structure of claim 1, wherein the first plate structure comprises: the first plate metal layer, the first bonding layer on the first plate metal layer, and the first barrier layer on the first bonding layer of the second region, the first barrier layer exposing the first bonding layer surface of the first region.
5. The capacitive structure of claim 4, wherein the material of the first barrier layer comprises titanium nitride, the material of the first adhesion layer comprises titanium, and the material of the first dielectric film comprises one or both of titanium oxide and titanium nitride.
6. The capacitive structure of claim 4, wherein said first plate structure further comprises: a second barrier layer under the first plate metal layer, and a second adhesive layer under the second barrier layer.
7. A method for forming a capacitor structure, comprising:
forming a first polar plate structure, wherein the first polar plate structure comprises a first region and a second region, and the surface of the first region is lower than that of the second region;
performing modification treatment to enable the material on the surface of the first polar plate structure to react with the reaction gas of the modification treatment so as to form a first dielectric film;
forming a second dielectric film on the surface of the first dielectric film;
a second plate structure is formed on the surface of the second dielectric film on the first region.
8. The method of forming a capacitor structure according to claim 7, wherein the reaction gas of the modification treatment contains one or both of an oxygen element and a nitrogen element, and wherein the material of the first dielectric film contains one or both of an oxygen element and a nitrogen element.
9. The method of forming a capacitor structure of claim 8, wherein the modifying reactive gas comprises one or both of oxygen and nitrogen oxide gas.
10. The method of forming a capacitor structure of claim 8, wherein said modifying comprises a heat treatment.
11. The method of forming a capacitor structure of claim 10, wherein said heat treatment is performed at a temperature in the range of 250 ℃ to 280 ℃.
12. The method of forming a capacitor structure of claim 11, wherein said process parameters of said modifying process further comprise: the duration ranges from 80 seconds to 120 seconds.
13. The method of forming a capacitive structure of claim 7 wherein the first plate structure comprises: the first bonding layer is positioned on the first polar plate metal layer, and the first blocking layer is positioned on the first bonding layer of the second region, the first blocking layer exposes the surface of the first bonding layer of the first region, and the surface of the first bonding layer of the first region is the surface of the first region.
14. The method of forming a capacitor structure of claim 13, wherein the material of the first barrier layer comprises titanium nitride, the material of the first adhesion layer comprises titanium, and the material of the first dielectric film comprises one or both of titanium oxide and titanium nitride.
15. The method of forming a capacitor structure of claim 13, wherein the method of forming the first plate structure comprises: forming an initial first plate structure, wherein the initial first plate structure comprises a first plate metal layer, a first bonding layer positioned on the first plate metal layer, and an initial first barrier layer positioned on the first bonding layer; forming a mask layer on the surface of the initial first barrier layer of the second region, wherein the mask layer exposes the surface of the initial first barrier layer of the first region; and etching the initial first barrier layer by taking the mask layer as a mask until the surface of the first bonding layer of the first region is exposed.
16. The method of forming a capacitor structure of claim 7, wherein the process of forming the second dielectric film comprises a chemical vapor deposition process.
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| CN202111603576.3A CN116364704A (en) | 2021-12-24 | 2021-12-24 | Capacitor structure and forming method thereof |
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