CN116364669A - Semiconductor power module and manufacturing method - Google Patents

Semiconductor power module and manufacturing method Download PDF

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Publication number
CN116364669A
CN116364669A CN202211472992.9A CN202211472992A CN116364669A CN 116364669 A CN116364669 A CN 116364669A CN 202211472992 A CN202211472992 A CN 202211472992A CN 116364669 A CN116364669 A CN 116364669A
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Prior art keywords
aluminum substrate
power module
semiconductor power
circuit
thermocouple
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Inventor
冯宇翔
谢荣才
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Guangdong Huixin Semiconductor Co Ltd
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Guangdong Huixin Semiconductor Co Ltd
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Priority to CN202211472992.9A priority Critical patent/CN116364669A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The invention provides a semiconductor power module and a manufacturing method thereof, comprising the following steps: the aluminum substrate, be fixed in insulating layer on the aluminum substrate front, be fixed in conducting layer on the insulating layer, set up in welding layer on the conducting layer, install in circuit component on the welding layer, a plurality of pin and plastic envelope piece, a plurality of pin with the conducting layer electricity is connected, the plastic envelope piece be used for sealed aluminum substrate the insulating layer the conducting layer the welding layer with one side that the plastic envelope piece is close to the circuit component is provided with the jack, connect the thermocouple in the jack, the thermocouple is used for detecting the plastic envelope piece aluminum substrate with the temperature of circuit component. The semiconductor power module has good temperature control effect and high safety and reliability.

Description

Semiconductor power module and manufacturing method
Technical Field
The invention relates to the technical field of intelligent power modules, in particular to a semiconductor power module and a manufacturing method thereof.
Background
The smart power module, IPM (Intelligent Power Module), is a power driven product that combines power electronics and integrated circuit technology. The intelligent power module integrates the power switch device and the high-voltage driving circuit and is internally provided with fault detection circuits such as overvoltage, overcurrent, overheat and the like. The intelligent power module receives the control signal of the MCU on one hand, drives the subsequent circuit to work, and sends the state detection signal of the system back to the MCU on the other hand. Compared with the traditional discrete scheme, the intelligent power module gains larger and larger markets by virtue of the advantages of high integration level, high reliability and the like, is particularly suitable for a frequency converter of a driving motor and various inverter power supplies, and is an ideal power electronic device for frequency conversion speed regulation, metallurgical machinery, electric traction, servo driving and frequency conversion household appliances.
The existing IPM intelligent power module is integrated with a plurality of power devices, with the development of the IPM intelligent power module to high power and high integration degree, the structure and the performance are greatly improved, the heat generation problem is increasingly prominent, the heat dissipation requirement is increasingly high, the IGBT chip is a core functional device for generating heat, and the working performance of the device is seriously affected by the accumulation of heat.
However, the power module is a thermal generator, and can generate heat during normal use, when the temperature of the module is high to a certain extent, the module can be influenced to a certain extent by production, and the module can explode when serious, so that the normal use of the module is influenced, the long-term work of the module at high temperature can also influence the work of the module to be subjected to the command, and the reliability is low and the safety is poor.
Disclosure of Invention
Aiming at the defects of the related technology, the invention provides a semiconductor power module with good temperature detection effect and high safety and reliability and a manufacturing method thereof.
In order to solve the above technical problems, an embodiment of the present invention provides a semiconductor power module, including: the aluminum substrate, be fixed in insulating layer on the aluminum substrate front, be fixed in conducting layer on the insulating layer, set up in welding layer on the conducting layer, install in circuit component on the welding layer, a plurality of pin and plastic envelope piece, a plurality of pin with the conducting layer electricity is connected, the plastic envelope piece be used for sealed aluminum substrate the insulating layer the conducting layer the welding layer with one side that the plastic envelope piece is close to the circuit component is provided with the jack, connect the thermocouple in the jack, the thermocouple is used for detecting the plastic envelope piece aluminum substrate with the temperature of circuit component.
Preferably, the conductive layer is a circuit wiring copper sheet.
Preferably, the thermocouple comprises a thermocouple body and a connecting wire extending from the thermocouple body, and the connecting wire is inserted into the jack to realize electrical connection.
Preferably, the circuit element is a plurality of chips, and the chips are connected through wires.
Preferably, the plurality of pins are fixedly connected through a plurality of reinforcing ribs.
Preferably, the back of the aluminum substrate is provided with an uneven texture structure.
Preferably, the circuit element includes a 6-channel HVIC chip, a plurality of capacitors connected to the HVIC chip, and a plurality of bridge arm circuits connected to the HVIC chip, and the HVIC chip is further electrically connected to the thermocouple.
Preferably, the plurality of bridge arm circuits include a plurality of upper bridge arm circuits and a plurality of lower bridge arm circuits, and the plurality of upper bridge arm circuits are electrically connected with the plurality of lower bridge arm circuits respectively.
In a second aspect, an embodiment of the present invention provides a method for manufacturing a semiconductor power module, including the steps of:
s1, manufacturing an aluminum substrate: manufacturing an aluminum material into the aluminum substrate with the proper size, forming textures on the back surface of the aluminum substrate by means of laser etching and polishing, arranging the insulating layer on the front surface of the aluminum substrate, forming a copper foil on the insulating layer, and forming the copper foil into circuit wiring by means of etching;
s2, mounting components: placing the circuit element and the pins on a solder paste;
s3, curing solder paste: solidifying the solder paste through reflow soldering, wherein the circuit element and the pins are fixed on the circuit wiring;
s4, removing soldering flux: cleaning the scaling powder remained on the aluminum substrate by spraying and ultrasonic cleaning modes;
s5, circuit element connection and installation: forming an electrical connection between the circuit element and the circuit wiring by bonding wires;
s6, circuit wiring connection and installation: if the aluminum substrate needs to be connected with the ground potential, the method further comprises the step of turning through the insulating layer through a turning hole, and forming connection between the ground potential of the circuit wiring and the aluminum substrate through a bonding wire;
s7, molding a plastic package part: sealing the parts of S1-S6 by injection molding using a thermoplastic resin or transfer molding using a thermosetting resin;
s8, manufacturing reinforcing ribs of pins: cutting off the reinforcing ribs of the pins and forming the reinforcing ribs into a required shape;
s9, testing products: and carrying out necessary tests by test equipment, and enabling a test qualified person to become the semiconductor power module, wherein a jack is preset at a specific position of one surface of the semiconductor power module, which is not attached with a radiator, and a thermocouple is inserted into the jack for detecting the temperature change of the position.
Compared with the related art, the insulation layer, the conductive layer, the welding layer, the circuit element, the pins and the plastic package are sequentially arranged on the front surface of the aluminum substrate, the pins are electrically connected with the conductive layer, the plastic package is used for sealing the aluminum substrate, the insulation layer, the conductive layer, the welding layer and the circuit element, a jack is arranged on one side, close to the circuit element, of the plastic package, a thermocouple is connected in the jack, and the thermocouple is used for detecting the temperatures of the plastic package, the aluminum substrate and the circuit element. Therefore, the semiconductor power module is not provided with a jack at a specific position on one surface of the radiator, a thermocouple can be inserted, the temperature of the main heating device is detected under different radiating conditions, and the system makes corresponding protection according to the detected temperature, so that the performances of switching-off speed, on-state voltage drop, current tailing time, switching-off voltage peak, loss and the like of the semiconductor power module are in a safe and reliable working range, and the working performance, safety and reliability of the IPM module are improved.
Drawings
The present invention will be described in detail with reference to the accompanying drawings. The foregoing and other aspects of the invention will become more apparent and more readily appreciated from the following detailed description taken in conjunction with the accompanying drawings. In the accompanying drawings:
fig. 1 is a schematic structural diagram of a semiconductor power module according to the present invention;
FIG. 2 is a top view of a semiconductor power module of the present invention;
fig. 3 is a cross-sectional view of a semiconductor power module of the present invention;
FIG. 4 shows a cutting structure for a jack of the present invention;
FIG. 5 is a schematic view of the structure of the thermocouple of the present invention;
FIG. 6 is a schematic diagram of the internal circuitry of the circuit device of the present invention;
fig. 7 is a circuit diagram of an HVIC chip of the invention;
fig. 8 is a flowchart of a method of manufacturing a semiconductor power module according to the present invention.
Detailed Description
The following describes in detail the embodiments of the present invention with reference to the drawings.
The detailed description/examples set forth herein are specific embodiments of the invention and are intended to be illustrative and exemplary of the concepts of the invention and are not to be construed as limiting the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to adopt other obvious solutions based on the disclosure of the claims and specification of the present application, including those adopting any obvious substitutions and modifications to the embodiments described herein, all within the scope of the present invention.
Example 1
As shown in fig. 1-7, the present invention provides a semiconductor power module 22 comprising: the aluminum substrate 23, be fixed in insulating layer 24 on the aluminum substrate 23 front, be fixed in conducting layer 25 on the insulating layer 24, set up in welding layer 39 on the conducting layer 25, install in circuit component 27 on the welding layer 39, a plurality of pin 29 and plastic envelope 31, a plurality of pin 29 with conducting layer 25 electricity is connected, plastic envelope 31 is used for sealed aluminum substrate 23 insulating layer 24 conducting layer 25 welding layer 39 and circuit component 27, plastic envelope 31 is close to one side of circuit component 27 is provided with jack 32, thermocouple 33 is connected in jack 32, thermocouple 33 is used for detecting the temperature of plastic envelope 31 aluminum substrate 23 and circuit component 27.
Specifically, the aluminum substrate 23 is used for installing and fixing the insulating layer 24, the conductive layer 25 is arranged on the insulating layer 24 and used for welding the circuit element 27 through the welding layer 39, so that the conductive layer 25 is conducted with the circuit element 27, the conductive layer 25 is connected with the plurality of pins 29 and used for being connected with an external power supply, and the circuit element 27 is powered through the external power supply, so that the conducting effect is achieved. The plastic package 31 is used for sealing the aluminum substrate 23, the insulating layer 24, the conductive layer 25, the soldering layer 39 and the circuit element 27, and can protect the circuit element. Since the side of the plastic package 31 close to the circuit element 27 is provided with the insertion hole 32, the thermocouple 33 is connected to the insertion hole 32, and the thermocouple 33 is used for detecting the temperatures of the plastic package 31, the aluminum substrate 23 and the circuit element 27. In this way, the jack 32 is arranged at a specific position on one surface of the semiconductor power module 22, which is not attached with a radiator, the thermocouple 33 can be inserted, the temperature of the main heating device is detected under different heat radiation conditions, and the system makes corresponding protection according to the detected temperature, so that the performances of the switching-off speed, the on-state voltage drop, the current tailing time, the switching-off voltage peak, the loss and the like of the semiconductor power module are in a safe and reliable working range, and the working performance, the safety and the reliability of the IPM module are improved.
Optionally, the thermocouple 33 may be a thermal NTC, so as to detect the temperature of the main heating device during different heat dissipation adjustment of the module, and the system makes corresponding protection according to the detected temperature, so that the performances of the system, such as the switching-off speed, the on-state voltage drop, the current tailing time, the off-voltage spike, the loss, and the like, are in a safe and reliable working range.
In this embodiment, the conductive layer 25 is a circuit wiring copper sheet. The circuit element 27 is convenient to connect, and meanwhile, the circuit wiring copper sheet has good conductivity and long service life.
In this embodiment, the thermocouple 33 includes a thermocouple body 34 and a connection wire 35 extending from the thermocouple body 34, and the connection wire 35 is inserted into the insertion hole 32 to achieve electrical connection. The electric connection is realized by inserting the connecting wire 35 into the jack 32, so that the thermocouple body 34 can rapidly detect the temperature, and the safety is high.
In this embodiment, the circuit element 27 is a plurality of chips, and the chips are connected by wires 28. The conducting effect among the chips is good, and the use is convenient.
In this embodiment, the pins 29 are fixedly connected by a plurality of reinforcing ribs 30. So that the plurality of pins 29 have high structural strength and long service life.
In this embodiment, the back surface of the aluminum substrate 23 is provided with an uneven texture 26.
In the present embodiment, the circuit element 27 includes a 6-channel HVIC chip 36, a plurality of capacitors 38 connected to the HVIC chip 36, and a plurality of arm circuits 37 connected to the HVIC chip 36, and the HVIC chip 36 is also electrically connected to the thermocouple 33. One end of the plurality of capacitors 38 (C1, C2, C3) is connected to VB1-VB3 of the HVIC chip 36 and the other end is connected to U.VS1-U.VS3.
Specifically, the IPM module heat generation is mainly caused by the internal power element, and when the power device (IGBT) is powered on, the chip (IGBT) generates a large amount of heat due to on-state loss and switching loss under the action of voltage and current. The heat dissipation path is from top to bottom: chip, ceramic copper-clad plate, substrate and radiator, and finally, the radiator and air conduct heat by convection and radiation, and heat is taken away by active heat radiation or passive heat radiation, and thermal resistance exists in the whole conduction process, so that the thermal resistance is a main factor influencing the heat radiation of the IGBT power module, and the heat radiation effect is enhanced and the thermal resistance is reduced.
The junction temperature Tj of the chip (IGBT) inside the IPM module determines the most important parameters for the chip (IGBT) to work properly. While the NTC inside the IPM module is placed close to the chip IGBT, there are several layers of materials between the chip (IGBT) and the aluminum substrate 23, as shown in fig. 3, and there is a certain thermal resistance, so the temperature collected by the NTC is a certain temperature difference T1 between the temperature of the aluminum substrate close to the chip and the temperature of the chip. t1=tj-Ta Tj is the junction temperature of the chip (IGBT), ta is the temperature that the NTC collects at the temperature that the aluminum base is near the chip.
When the IPM application system is used for normal work, the reference temperature of the temperature protection function is the temperature Ta of the aluminum base collected by the NTC and approaching the chip, and a certain temperature difference T1 exists between the temperature and the junction temperature Tj of the chip (IGBT), if the temperature Ta of the aluminum base collected by the NTC and approaching the chip is directly used for protection, the temperature protection function cannot be timely due to the temperature difference, and the IPM module chip (IGBT) is overheated to cause damage, even the whole device and even the whole system module are damaged. Therefore, in different application systems, the junction temperature Tj of the chip (IGBT) needs to be very close to the test, the module application system, and the reference temperature for temperature protection is added to the temperature difference T1 between the temperature of the aluminum base collected by the NTC and the temperature of the chip, and the temperature is compensated, so as to perform temperature protection.
In the scheme of testing junction temperature Tj of the chip (IGBT), as shown in fig. 3, a T-shaped jack 32 is formed right above the chip IGBT1 and the RC-IGBT1, and the IGBT5 and the RC-IGBT5, a thin plastic package material is provided between the chip (IGBT) and the jack 32, and the body of the thermocouple 33 is inserted into the jack 32 and then sealed by the plastic package material, so that the temperature collected by the thermocouple 33 is very close to the junction temperature Tj of the chip.
The IPM module is applied under various different heat dissipation conditions, and the temperature difference between the junction temperature Tj of the chip and the temperature collected by the NTC inside the IPM module is different, so before mass production of each application system, the method is needed to test the temperature difference between the junction temperature Tj of the chip (IGBT) and the temperature collected by the NTC inside the IPM module, perform temperature compensation, and design a reasonable temperature protection function.
When the IPM module leaves the factory, the insert 32 at a specific position on one surface of the module, which is not attached with the radiator, is made of plastic packaging material, and the insert is as shaped and sized as the insert 32, as shown in fig. 4, so that the insert 32 is protected from damaging a chip of the module, and when the module needs to test the junction temperature Tj of the chip, the insert is removed, and the junction temperature Tj of the module can be tested by inserting the thermocouple 33 (fig. 5).
In this embodiment, the plurality of bridge arm circuits 37 includes a plurality of upper bridge arm circuits and a plurality of lower bridge arm circuits, and the plurality of upper bridge arm circuits are electrically connected to the plurality of lower bridge arm circuits, respectively.
Specifically, the plurality of upper bridge arm circuits include RC-IGBT1 and IGBT1, RC-IGBT2 and IGBT2, and RC-IGBT3 and IGBT3. The plurality of lower leg circuits includes RC-IGBT4 and IGBT4, RC-IGBT5 and IGBT5, and RC-IGBT6 and IGBT6. Wherein, RC-IGBT1 RC-IGBT (reverse conducting IGBT), it embeds an n-type semiconductor material in the p region of the collector, thus just as adding the function of the reverse diode, the reverse conductivity is increased. In contrast to IGBTs of Si material, the reverse parallel FRD (flywheel diode chip) is no longer necessary. RC-IGBTs (reverse conducting IGBTs) have the advantage over IGBTs of silicon materials: the IGBT chip or FWD chip mainly includes a termination region and a cell region, and the termination portion can be shared when two devices are combined into one chip, so that the area of the termination portion can be reduced. The power per unit area is improved, and the parallel connection effect is improved. The resistance ratio Rth (j-c) of the diode and the IGBT is increased, the temperature pulsation of the chip is reduced, the degree of freedom of the design of the optimal thermosensitive module is improved, and compared with the IGBT made of silicon materials, the RC-IGBT device has the advantages of smaller area, smaller thermal effect, high switching speed, lower on-state voltage, large on-state current and low loss cost under the same conditions. Is very suitable for Chang Gaocheng integrated power modules.
Specifically, the port HO1\HO2\HO3\LO1\LO2\LO3 of the integrated 6-channel driving HVIC 0103 is connected with the G port of RC-IGBT1 and IGBT1\RC-IGBT2 and TGBT2\CR-IGBT3 and IGBT3\RC-IGBT4 and IGBT4\RC-IGBT5 and IGBT5\RC-IGBT6 and IGBT6 respectively; RC-IGBT1 and IGBT1, RC-IGBT2 and TGBT2, CR-IGBT3 and IGBT3 are connected together, and the 1 st pin P port as IPM is led out.
The E ports of the RC-IGBT1 and the IGBT1, the RC-IGBT2 and the TGBT2, and the CR-IGBT3 and the IGBT3 are respectively connected with the C poles of the RC-IGBT4 and the IGBT4, the RC-IGBT5 and the IGBT5, and the RC-IGBT6 and the IGBT6.
The 6-channel driving HVIC 0103 has its VB1\U, VS1, VB2\V, VS2, VB3\W connected to bootstrap capacitor 0104, and VB1, VB2, VB3 led out as 3 rd, 5 th, 7 th pins VB1, VB2, VB3 ports of IPM. The RCIN port of the 6-channel drive HVIC leads out the 18 th pin RCIN port as an IPM.
And the connection point of the upper bridge arm CR-IGBT3 and the IGBT3 of the C bridge and the connection point of the lower bridge arm RC-IGBT6 and the IGBT6 is led out to serve as a 6 th pin W and a VS3 port of the IPM. The connection point of the upper bridge arm CR-IGBT2 and IGBT2 of the B bridge and the connection point of the lower bridge arm RC-IGBT5 and IGB5T6 is led out to serve as a 4 th pin V and VS2 port of the IPM; and the connection point of the upper bridge arm CR-IGBT1 and the IGBT1 of the A bridge and the connection point of the lower bridge arm RC-IGBT4 and the IGBT4 are led out to serve as a No. 2 pin U and a VS1 port of the IPM. And E ports of the lower bridge arm RC-IGBT4 and IGBT4, RC-IGBT5 and RC-IGBT6 and IGBT6 are led out to serve as 8 th leg UN, 9 th leg VN and 10 th leg WN ports of the IPM respectively.
HIN1 leads out 11 th pin HIN1 port as IPM; HIN2 is led out as a 12 th pin HIN2 port of the IPM; HIN3 exits pin 13 HIN3 port as IPM; LIN1 leads out a 14 th pin LIN1 port as an IPM; LIN2 is led out of a 15 th pin LIN2 port serving as an IPM; LIN3 exits the 16 th pin LIN3 port as IPM.
The 6-channel drives ITRIP+, ITRIP-, of HVIC 0103, and leads out 17 th and 18 th pins ITRIP+, ITRIP-ports as IPM. The FLT/EN of the 6-channel drive HVIC 0103 is connected with one end of a temperature sampling temperature sensor NTC, and is led out to serve as a 19 th pin FLT/EN port of the IPM, and the other end of the temperature sampling temperature sensor NTC is connected with the ground GND;
the 6-channel drives the RCIN of HVIC 0103 and brings out the 20 th pin RCIN port as IPM; VCC leads out a 21 st pin VCC port as IPM; GND is led out as the 22 nd pin GND port of IPM.
In this embodiment, the HVIC chip 36 includes a high-side drive circuit 3 channel, and a low-side drive circuit 3 channel.
The high-side drive circuit internally comprises a high-side undervoltage protection circuit and a bootstrap circuit, and realizes a high-side drive undervoltage protection function and a bootstrap power supply function.
The high-side driving circuit and the low-side driving circuit are connected with each other through the interlocking and dead zone circuit to realize interlocking and dead zone functions.
The power supply circuit comprises a 5V LDO circuit and a 1.2V BANDGAP circuit, and supplies 5V voltage to all circuits and external circuits inside the HVIC and provides stable 1.2V voltage reference for the HVIC and the external circuits.
The power supply circuit is connected with the power supply under-voltage protection circuit to realize the power supply under-voltage protection function.
The HVIC also comprises an enabling circuit inside to realize an enabling function; the overcurrent protection circuit realizes an overcurrent protection function; the overvoltage protection circuit realizes an overvoltage protection function; the temperature protection circuit realizes a temperature protection function; the fault reporting circuit outputs fault reporting signals to the outside when conditions such as under-voltage, over-current, over-voltage, over-temperature and the like occur in the fault reporting circuit.
Example two
As shown in fig. 8, an embodiment of the present invention provides a method for manufacturing a semiconductor power module, including the steps of:
s1, manufacturing an aluminum substrate 23: an aluminum material is manufactured into the aluminum substrate 23 of a proper size, and a grain 26 is formed on the back surface thereof by means of laser etching and polishing, the insulating layer 24 is provided on the front surface of the aluminum substrate 23, and a copper foil is formed on the insulating layer 24, and the copper foil is formed into a circuit wiring by means of etching.
S2, mounting components: the circuit element 27 and the pins 29 are placed on a solder paste.
S3, curing solder paste: the solder paste is cured by reflow soldering, and the circuit element 27 and the pins 29 are fixed on the circuit wiring.
S4, removing soldering flux: the flux remaining on the aluminum substrate 23 is removed by spraying and ultrasonic cleaning.
S5, connection and installation of the circuit element 27: an electrical connection is made between the circuit element 27 and the circuit wiring by bonding wires.
S6, circuit wiring connection and installation: if the aluminum substrate 23 needs to be connected to a ground potential, the method further includes a step of turning through the insulating layer 24 via a turning hole and forming a connection between the ground potential of the circuit wiring and the aluminum substrate 23 via a bonding wire.
S7, molding the plastic package 31: the parts of S1-S6 are sealed by injection molding using a thermoplastic resin or transfer molding using a thermosetting resin.
S8, manufacturing reinforcing ribs 30 of pins 29: the ribs 30 of the pins 29 are cut out and formed into a desired shape.
S9, testing products: by performing necessary tests by a test apparatus, a test qualified person becomes the semiconductor power module 22, and a jack 32 is provided in a specific position of a side of the semiconductor power module 22 to which a heat sink is not attached, and a thermocouple 33 is inserted for detecting a temperature change at the position.
Specifically, an aluminum material is formed into an appropriate size as the aluminum substrate 23 and the texture 26 is formed on the back surface thereof by means of laser etching, polishing, or the like, the insulating layer 24 is provided on the surface of the aluminum substrate 23 and a copper foil is formed on the insulating layer 24, and the copper foil is etched to form the circuit wiring;
coating solder paste on specific positions of the circuit wiring;
forming a copper material into a proper shape and performing surface plating treatment as the leads 29, wherein specific positions of the leads 29 are connected by reinforcing ribs 30 as shown in fig. 2 in order to prevent the circuit element 27 from being electrostatically damaged in a subsequent process;
placing the circuit element 27 and the pins 29 on a solder paste;
solidifying the solder paste by reflow soldering, the circuit element 27 and the pins 29 being fixed on the circuit wiring;
cleaning the residual soldering flux on the aluminum substrate 23 by spraying, ultrasonic and other cleaning modes;
forming a connection between the circuit element 27 and the circuit wiring by bonding wires;
if the aluminum substrate 23 needs to be connected with a ground potential, the method further comprises a step of turning through the insulating layer 24 through a turning hole and forming connection between the ground potential of the circuit wiring and the aluminum substrate 23 through a bonding wire;
sealing the above elements by injection molding using a thermoplastic resin or transfer molding using a thermosetting resin;
cutting off the reinforcing ribs 30 of the pins 29 and forming a desired shape;
through the test equipment, the test qualified person is the semiconductor power module which is formed by designing a jack at a specific position of one surface of the module, which is not attached with a radiator, inserting a thermocouple and detecting the temperature change of the position and connecting the RC-IGBT and the common IGBT in parallel. Therefore, the semiconductor power module is not provided with a jack at a specific position on one surface of the radiator, a thermocouple can be inserted, the temperature of the main heating device is detected under different radiating conditions, and the system makes corresponding protection according to the detected temperature, so that the performances of switching-off speed, on-state voltage drop, current tailing time, switching-off voltage peak, loss and the like of the semiconductor power module are in a safe and reliable working range, and the working performance, safety and reliability of the IPM module are improved.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any such modifications, equivalents, and improvements that fall within the spirit and principles of the present invention are intended to be covered by the following claims.

Claims (9)

1. A semiconductor power module, comprising: the aluminum substrate, be fixed in insulating layer on the aluminum substrate front, be fixed in conducting layer on the insulating layer, set up in welding layer on the conducting layer, install in circuit component on the welding layer, a plurality of pin and plastic envelope piece, a plurality of pin with the conducting layer electricity is connected, the plastic envelope piece be used for sealed aluminum substrate the insulating layer the conducting layer the welding layer with one side that the plastic envelope piece is close to the circuit component is provided with the jack, connect the thermocouple in the jack, the thermocouple is used for detecting the plastic envelope piece aluminum substrate with the temperature of circuit component.
2. The semiconductor power module of claim 1, wherein the conductive layer is a circuit routing copper sheet.
3. The semiconductor power module of claim 1, wherein the thermocouple comprises a thermocouple body and a connection wire extending from the thermocouple body, the connection wire being inserted into the receptacle to make electrical connection.
4. The semiconductor power module of claim 1, wherein the circuit element is a plurality of chips, the plurality of chips being connected by wires.
5. The semiconductor power module of claim 1, wherein the plurality of pins are fixedly connected by a plurality of stiffener ribs.
6. The semiconductor power module of claim 1, wherein the back surface of the aluminum substrate is provided with an rugged texture.
7. The semiconductor power module of claim 1, wherein the circuit element comprises a 6-channel HVIC chip, a plurality of capacitors connected to the HVIC chip, and a plurality of leg circuits connected to the HVIC chip, the HVIC chip further electrically connected to the thermocouple.
8. The semiconductor power module of claim 7, wherein the plurality of leg circuits includes a plurality of upper leg circuits and a plurality of lower leg circuits, the plurality of upper leg circuits being electrically connected to the plurality of lower leg circuits, respectively.
9. A method of manufacturing a semiconductor power module according to any one of claims 1 to 8, characterized in that the method of manufacturing comprises the steps of:
s1, manufacturing an aluminum substrate: manufacturing an aluminum material into the aluminum substrate with the proper size, forming textures on the back surface of the aluminum substrate by means of laser etching and polishing, arranging the insulating layer on the front surface of the aluminum substrate, forming a copper foil on the insulating layer, and forming the copper foil into circuit wiring by means of etching;
s2, mounting components: placing the circuit element and the pins on a solder paste;
s3, curing solder paste: solidifying the solder paste through reflow soldering, wherein the circuit element and the pins are fixed on the circuit wiring;
s4, removing soldering flux: cleaning the scaling powder remained on the aluminum substrate by spraying and ultrasonic cleaning modes;
s5, circuit element connection and installation: forming an electrical connection between the circuit element and the circuit wiring by bonding wires;
s6, circuit wiring connection and installation: if the aluminum substrate needs to be connected with the ground potential, the method further comprises the step of turning through the insulating layer through a turning hole, and forming connection between the ground potential of the circuit wiring and the aluminum substrate through a bonding wire;
s7, molding a plastic package part: sealing the parts of S1-S6 by injection molding using a thermoplastic resin or transfer molding using a thermosetting resin;
s8, manufacturing reinforcing ribs of pins: cutting off the reinforcing ribs of the pins and forming the reinforcing ribs into a required shape;
s9, testing products: and carrying out necessary tests by test equipment, and enabling a test qualified person to become the semiconductor power module, wherein a jack is preset at a specific position of one surface of the semiconductor power module, which is not attached with a radiator, and a thermocouple is inserted into the jack for detecting the temperature change of the position.
CN202211472992.9A 2022-11-21 2022-11-21 Semiconductor power module and manufacturing method Pending CN116364669A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211472992.9A CN116364669A (en) 2022-11-21 2022-11-21 Semiconductor power module and manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211472992.9A CN116364669A (en) 2022-11-21 2022-11-21 Semiconductor power module and manufacturing method

Publications (1)

Publication Number Publication Date
CN116364669A true CN116364669A (en) 2023-06-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211472992.9A Pending CN116364669A (en) 2022-11-21 2022-11-21 Semiconductor power module and manufacturing method

Country Status (1)

Country Link
CN (1) CN116364669A (en)

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