CN116359268A - FCBGA blind hole bottom quality analysis method - Google Patents
FCBGA blind hole bottom quality analysis method Download PDFInfo
- Publication number
- CN116359268A CN116359268A CN202310343018.0A CN202310343018A CN116359268A CN 116359268 A CN116359268 A CN 116359268A CN 202310343018 A CN202310343018 A CN 202310343018A CN 116359268 A CN116359268 A CN 116359268A
- Authority
- CN
- China
- Prior art keywords
- blind hole
- areas
- processing
- fcbga
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/2202—Preparing specimens therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
- G01N2001/2873—Cutting or cleaving
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/30—Computing systems specially adapted for manufacturing
Abstract
The invention provides a FCBGA blind hole bottom quality analysis method, the traditional blind hole bottom quality monitoring usually adopts a single-area FIB processing mode, if a plurality of areas are processed, a sample table is rotated from a fixed angle to 0 DEG to repeatedly find locating points, the steps are complicated, and the time is long; the invention adopts positioning once, a plurality of areas are sequentially deposited and then cut, the plurality of areas are processed in the same working procedure, the processing time is greatly shortened, the efficiency is improved, and the purpose of continuously monitoring the quality of different hole bottom positions of the same blind hole can be realized; after the processing is finished, the defects of cracks, pinholes and the like in one or more processing areas are found, so that element analysis can be performed according to positions on the basis that the sample table keeps a fixed angle, and the sample table is not required to be rotated to 0 degrees. The range of processing a plurality of areas can be very wide, and a plurality of processing areas can be realized according to the size of the processing size in the field of view, and the smaller the processing size is, the more the processing areas are.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a FCBGA blind hole bottom quality analysis method.
Background
With the improvement of the integration level of the chip industry, more stringent requirements are put forward on the integrated circuit package, and flip chip ball grid array package FCBGA (Flip Chip Ball Grid Array) becomes the current best choice on the basis of the original package variety to meet the development requirements. The reliability of the via hole determines the reliability of the FCBGA to some extent. In the process of producing the packaging substrate, the printed circuit board needs to bear temperature impact of a plurality of periods, and higher temperature impact has a larger stress effect on the conductive Kong Naceng copper and the hole copper, so that the monitoring and analysis of the quality of the bottom of the FCBGA blind hole are indispensable.
For the quality analysis of the blind hole bottom of the conventional FCBGA, the blind hole is longitudinally cut and ground to be made into a vertical slice, the blind hole is cut or polished by an ion polishing machine (CP) after mechanical grinding and polishing, and then high-power morphology observation is carried out under a scanning electron microscope, but a test surface of a sample is exposed to air in the transportation process, so that the sample is gradually oxidized, and other substances or components are stained, so that difficulties are brought to the subsequent SEM morphology observation, and interference elements in EDS element analysis are increased.
Therefore, a method is needed to analyze the quality of the bottom of the FCBGA blind hole.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an objective of the present invention is to provide a method for analyzing the quality of a blind hole bottom of an FCBGA, which is used for solving the problems existing in the blind hole quality analysis process in the prior art.
To achieve the above and other related objects, the present invention provides a method for analyzing the bottom quality of a FCBGA blind hole, comprising the steps of:
s1: selecting samples with cracks in FCBGA blind holes, pouring glue into the samples to manufacture vertical slices, and manufacturing the slices in a certain size range through grinding;
s2: spraying metal on the surface of the slice by using an ion sputtering instrument to ensure that the slice has certain conductivity;
s3: placing the manufactured slice into a sample bin of a FIB-SEM dual-beam system, vacuumizing, updating a navigation camera after the vacuum degree reaches a certain range, and starting an electron beam and an ion beam;
s4: selecting a sample to be detected, adjusting the working distance of a sample table to the concentric height of the electron beam and the ion beam, and adjusting the image clearly;
s5: rotating the sample stage to a fixed angle, and adjusting the Z-axis height and the ion beam offset of the sample stage until the confocal point of the ion beam and the electron beam is found;
s6: selecting proper deposition parameters, and simultaneously depositing one or more protective layers in one or more cutting areas by GIS gas;
s7: selecting appropriate rough cutting parameters, and rough cutting one or more selected cutting areas through an ion beam;
s8: and rotating the sample stage by 1-20 degrees on the basis of fixed angle, selecting proper finishing parameters, and finishing the selected one or more cutting areas by using an ion beam to obtain one or more corresponding processed observation areas.
Preferably, the method further comprises the following steps:
s9: if any observation area processed has defects including a blind hole bottom crack and a pin hole, EDS data acquisition is carried out on the basis that a sample table keeps a fixed angle to obtain test data;
s10: and analyzing the data acquired by the EDS so as to confirm the element components at the defect of the blind hole bottom.
Preferably, the plurality of cutting areas are adjacent to each other and are viewable within the same field of view.
Preferably, in step S6, the material of the protective layer is a tungsten layer or a carbon layer.
Preferably, in step S3, vacuum is applied so that the vacuum degree is 5×10 or less -3 Pa。
As described above, the invention provides a FCBGA blind hole bottom quality analysis method, the traditional blind hole bottom quality monitoring generally adopts a single-area FIB processing mode, if a plurality of areas are processed, a sample table is rotated from a fixed angle to 0 DEG to repeatedly find locating points, the steps are complex, and the time is long; the invention adopts positioning once, a plurality of areas are sequentially deposited and then cut, and the plurality of areas are processed in the same working procedure, thereby greatly shortening the processing time, improving the efficiency and realizing the purpose of continuously monitoring the quality of different hole bottom positions of the same blind hole; after the processing is finished, the defects of cracks, pinholes and the like in one or more processing areas are found, so that element analysis can be performed according to positions on the basis that the sample table keeps a fixed angle, and the sample table is not required to be rotated to 0 degrees. Meanwhile, the range of processing a plurality of areas can be wide, if the slice manufacturing heights are kept consistent and the height difference is less than 100 mu m, a plurality of processing areas can be realized according to the processing size in the visual field range, and the processing size is smaller, and the number of the processing areas is more.
Drawings
Fig. 1 is a schematic diagram of a dual beam system according to the present invention.
Fig. 2 is a schematic diagram of the present invention for cutting a sample using an ion beam.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
As described in detail in the embodiments of the present invention, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present. As used herein, "between … …" is meant to include both endpoints.
In the context of this application, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be changed at will, and the layout of the components may be more complex.
Based on the defects of the prior art, the method uses a FIB-SEM dual-beam system to carry out synchronous micro-nano machining and observation analysis. Scanning electron microscopy (Scanning Electron Microscopy, SEM) is a commonly used instrument for characterizing nanomaterials, and Focused Ion Beam (FIB) is an emerging development tool in nanotechnology. The former can observe the appearance and analyze the components of the sample surface, but can not directly obtain the internal information of the sample; the latter can analyze the information reflecting the internal (or surface) of the sample, such as morphology, composition and structure. The two can be combined in the aspects of imaging and analysis to obtain a FIB-SEM double-beam system, the designated position of the nano material can be directly processed by utilizing the FIB, the internal structure of the sample is exposed for SEM detection, and if EDS is configured, the element components can be detected in real time in the processing area.
The FCBGA blind hole is processed and observed by utilizing the FIB-SEM dual-beam system, the sample is in the same sample bin, the sample is always kept in a vacuum state, the cutting surface is free from pollution, the operation is convenient, the real-time observation can be carried out during the processing, and the method has the advantages of optimizing the processing effect in real time and continuously monitoring the quality of the blind hole bottom. The invention provides a high-efficiency method for analyzing the quality of the FCBGA blind hole bottoms, which can synchronously process a plurality of designated areas, save processing time and analyze element components for the plurality of processing areas by using EDS in parallel.
Specifically, the invention provides a FCBGA blind hole bottom quality analysis method, which comprises the following steps:
s1: selecting samples with cracks in FCBGA blind holes, pouring glue into the samples to manufacture vertical slices, and manufacturing the slices within a certain size range through grinding, wherein the grinding specifically comprises the steps of rough grinding, fine grinding, polishing and the like.
S2: and (3) performing metal spraying on the surface of the slice by using an ion sputtering instrument to ensure that the slice has certain conductivity.
S3: and placing the manufactured slice into a sample bin of the FIB-SEM dual-beam system, vacuumizing, updating a navigation camera after the vacuum degree reaches a certain range, and starting an electron beam and an ion beam.
S4: selecting a sample to be detected, adjusting the working distance of a sample table to the concentric height of the electron beam and the ion beam, and adjusting the image clearly;
s5: the sample stage is rotated to a fixed angle alpha, and the Z-axis height of the sample stage and the offset of the ion Beam (Beam shift) are adjusted until the confocal point of the ion Beam and the electron Beam is found.
In the working process, the sample table is rotated to a fixed angle alpha, as shown in fig. 1, at this time, the ion beam and the sample table are vertical, so that the processing is convenient, meanwhile, a certain included angle exists between the electron beam and the sample table, and the structure in the section can be observed, so that the effect of real-time observation of the SEM on the FIB micromachining process is realized. Thus, it is desirable to ensure that the sample stage is at the confocal point of the ion beam and the electron beam. For a specific value of the fixed angle α, there are differences between different machines, which are not specifically limited herein.
S6: and selecting proper deposition parameters, and simultaneously depositing one or more protective layers in one or more cutting areas by GIS gas.
Specifically, a Gas Injection System (GIS) is configured to react with a chemical gas by physical sputtering to selectively remove certain materials or deposit materials. Material and method for producing the sameThe material deposition process is that the ion beam or the electron beam breaks down the gas molecules adsorbed on the surface layer of the sample into volatile parts and nonvolatile parts. The volatile part is pumped by a vacuum system, and the non-volatile part is deposited at the position irradiated by the ion beam or the electron beam to form thin film deposition. The common film layer is Pt film and SiO film 2 Films, W films and C films. In the step, one or more protective layers are deposited on the surface of the cutting area by utilizing the GIS, so that the damage of the ion beam on the surface of the sample during the subsequent cutting can be avoided.
S7: appropriate rough cut parameters are selected and the selected one or more cut regions are rough cut by the ion beam. (by what rough cut)
S8: the sample stage is rotated by 1-20 degrees (for example, to 54-56 degrees) based on the fixed angle alpha, appropriate finishing parameters are selected, and one or more selected cutting areas are finished by the ion beam to obtain one or more corresponding processed observation areas. And (3) finely polishing and flattening the cross section through fine trimming so as to obtain a high-quality picture.
Specifically, by adopting methods such as ion beam etching or gas enhanced etching, the FIB technology can accurately observe the section of a specific micro-area of the device, so that a clear high-resolution image is formed, the method is not limited by a processed material, and the method can also observe a sample in real time by using SEM (scanning electron microscope) while etching, and is particularly suitable for analyzing the section of a blind hole. As shown in fig. 2, the ion beam is perpendicular to the cutting area, the electron beam observes the section of the sample through the slot dug by the ion beam, and an inclination angle of other than 90 degrees exists between the electron beam and the section, so that a high-quality electron microscope picture with accurate data is finally obtained.
When the plurality of cutting areas are cut, the step S4 is not repeated to find the confocal point again, and since the plurality of cutting areas are adjacent to each other and can be observed in the same field of view, after the cutting of one area is completed, the sample stage is moved slightly in the field of view to reach the confocal point of the other area, and then the cutting is performed again. Similarly, depositing the protective layer in a plurality of cutting areas is accomplished simultaneously without searching for the confocal point again. The multiple regions are sequentially deposited and then cut, and the multiple regions are processed in the same process.
S9: if any observation area processed has defects including a blind hole bottom crack and a pin hole, EDS data acquisition is carried out on the basis that the sample stage keeps a fixed angle to obtain test data.
S10: and analyzing the data acquired by the EDS so as to confirm the element components at the defect of the blind hole bottom.
Example 1
The embodiment specifically describes the FCBGA blind hole bottom quality analysis method, which comprises the following steps:
s1: selecting samples with cracks in FCBGA blind holes, pouring glue into the samples to manufacture vertical slices, and grinding the blind holes to half positions of the holes through steps of rough grinding, fine grinding, polishing and the like; the slice size ranges from length x width x height: 1-2cm x 0.5-1cm, and the slice height is required to be uniform.
S2: and (3) spraying gold for 30s-10min (for example, 120 s) on the prepared slice by using an ion sputtering instrument until golden yellow color appears on the surface of the slice, and adhering the slice sprayed with gold on a sample seat by using conductive adhesive to finish the early-stage sample preparation work.
S3: placing the prepared sample into a sample bin of an FIB-SEM dual-beam system, and vacuumizing to a vacuum degree of less than or equal to 5 multiplied by 10 -3 And when Pa, refreshing the navigation camera to obtain a new sample bin navigation picture, and starting the electron beam and the ion beam.
S4: selecting a sample to be detected from the navigation photo, moving a sample stage to adjust the sample to be right below a pole shoe until a sample image can be observed under an electron beam, finding a position to be cut (a blind hole), adjusting the working distance of the sample stage to the concentric height of the ion beam and the electron beam, wherein the concentric height value is different from that of different machine stages, which can be 5mm, 7mm, 10mm and the like, taking 7mm as an example, searching a proper positioning point at the position to be cut, adjusting parameters such as electron beam voltage, current, observation mode, residence time, focal length, dispersion, brightness, contrast and the like, adjusting the image to be clear, adjusting the Z-axis working distance of a 'Link' sample stage, adjusting the Z-axis working distance to be clear again if the Z-axis working distance is not 7mm, and adjusting the Z-axis distance to be clear until Z is 7mm.
S5: tilting the sample Stage to 5 degrees, and adjusting Stage Z under the electron beam to restore the focus to the positioning point; continuing to incline the sample Stage to 52 degrees (the fixed angle alpha of the rotation of the sample Stage is 52 degrees in the embodiment), and adjusting Stage Z under the electron beam to restore the focus to the positioning point; selecting a multiplying power which is different from the multiplying power of the electron beam by not more than 1500x, refreshing an image of the ion beam by using a pA-level beam current, and observing whether image positioning points of the electron beam and the ion beam are consistent; if the two positioning points are almost consistent, judging that the confocal point of the electron beam and the ion beam is found; if the difference of the positioning points is within 50 mu m, beam shift of the ion Beam can be adjusted to adjust the positioning points of the ion Beam and the Beam shift to be consistent; if the difference between the two positioning points is larger than 50 μm, the sample stage is required to be turned back to 0 degrees, and the steps are repeated until the confocal point of the ion beam and the electron beam is found.
S6: and selecting proper voltage and current, and simultaneously depositing one or more protective layers at one or more cutting positions by selecting GIS gas of tungsten or carbon under an ion beam, wherein the x size of the protective layer can be selected from the x size, the y size and the z size of a cutting area. Here, W (CO) may be selected for deposition of the W layer 6 C can be used for depositing C layer 8 H 8 Or C 10 H 10 。
S7: the selected area or areas are rough cut by ion beam, and the size of the cut area can be freely input and edited according to the requirement.
S8: rotating the sample stage to 54 degrees, namely rotating the sample stage by 2 degrees on the basis of a fixed angle of 52 degrees, selecting proper voltage and current, finishing one or more selected areas by using an ion beam to obtain one or more processed areas, wherein the finishing machining dimensions x and z can be selected from rough cutting x and z dimensions, and the curtain effect is preferably covered by y dimensions.
S9: if any processed area has defects such as blind hole bottom cracks, pinholes and the like, the sample stage keeps an angle of 52 degrees, proper voltage and current are selected, the defect is focused to be clear under an electron beam, an image is acquired on an EDS, and one or more areas of the defect are selected on the image for data acquisition, so that test data can be obtained.
S10: and analyzing the data acquired by the EDS so as to confirm the element components at the defect of the blind hole bottom.
In summary, the invention provides a method for analyzing the quality of the bottom of a FCBGA blind hole, the traditional FCBGA blind hole bottom quality monitoring usually adopts a single-area FIB processing mode, if a plurality of areas are processed, a sample table is rotated from a fixed angle to 0 DEG to repeatedly find locating points, the steps are complicated, and the time is long; the invention adopts positioning once, a plurality of areas are sequentially deposited and then cut, and the plurality of areas are processed in the same working procedure, thereby greatly shortening the processing time, improving the efficiency and realizing the purpose of continuously monitoring the quality of different hole bottom positions of the same blind hole; after the processing is finished, the defects of cracks, pinholes and the like in one or more processing areas are found, so that element analysis can be performed according to positions on the basis that the sample table keeps a fixed angle, and the sample table is not required to be rotated to 0 degrees. Meanwhile, the range of processing a plurality of areas can be wide, if the slice manufacturing heights are kept consistent and the height difference is less than 100 mu m, a plurality of processing areas can be realized according to the processing size in the visual field range, and the processing size is smaller, and the number of the processing areas is more.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (5)
1. The FCBGA blind hole bottom quality analysis method is characterized by comprising the following steps:
s1: selecting samples with cracks in FCBGA blind holes, pouring glue into the samples to manufacture vertical slices, and manufacturing the slices in a certain size range through grinding;
s2: spraying metal on the surface of the slice by using an ion sputtering instrument to ensure that the slice has certain conductivity;
s3: placing the manufactured slice into a sample bin of a FIB-SEM dual-beam system, vacuumizing, updating a navigation camera after the vacuum degree reaches a certain range, and starting an electron beam and an ion beam;
s4: selecting a sample to be detected, adjusting the working distance of a sample table to the concentric height of the electron beam and the ion beam, and adjusting the image clearly;
s5: rotating the sample stage to a fixed angle, and adjusting the Z-axis height and the ion beam offset of the sample stage until the confocal point of the ion beam and the electron beam is found;
s6: selecting proper deposition parameters, and simultaneously depositing one or more protective layers in one or more cutting areas by GIS gas;
s7: selecting appropriate rough cutting parameters, and rough cutting one or more selected cutting areas through an ion beam;
s8: and rotating the sample stage by 1-20 degrees on the basis of fixed angle, selecting proper finishing parameters, and finishing the selected one or more cutting areas by using an ion beam to obtain one or more corresponding processed observation areas.
2. The method for analyzing the quality of the bottom of a FCBGA blind hole according to claim 1, further comprising the steps of:
s9: if any observation area processed has defects including a blind hole bottom crack and a pin hole, EDS data acquisition is carried out on the basis that a sample table keeps a fixed angle to obtain test data;
s10: and analyzing the data acquired by the EDS so as to confirm the element components at the defect of the blind hole bottom.
3. The method for analyzing the quality of the bottom of the FCBGA blind hole according to claim 1, wherein the method comprises the following steps: multiple cutting areas are adjacent to each other and can be observed within the same field of view.
4. The method for analyzing the quality of the bottom of the FCBGA blind hole according to claim 1, wherein the method comprises the following steps: in step S6, the material of the protective layer is a tungsten layer or a carbon layer.
5. The method for analyzing the quality of the bottom of the FCBGA blind hole according to claim 1, wherein the method comprises the following steps: in the step S3, the vacuum is pumped to ensure that the vacuum degree is less than or equal to 5 multiplied by 10 -3 Pa。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310343018.0A CN116359268A (en) | 2023-04-03 | 2023-04-03 | FCBGA blind hole bottom quality analysis method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310343018.0A CN116359268A (en) | 2023-04-03 | 2023-04-03 | FCBGA blind hole bottom quality analysis method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116359268A true CN116359268A (en) | 2023-06-30 |
Family
ID=86931181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310343018.0A Pending CN116359268A (en) | 2023-04-03 | 2023-04-03 | FCBGA blind hole bottom quality analysis method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116359268A (en) |
-
2023
- 2023-04-03 CN CN202310343018.0A patent/CN116359268A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11315756B2 (en) | Fiducial design for tilted or glancing mill operations with a charged particle beam | |
| JP5882381B2 (en) | Slice and view with decoration | |
| CN105914159B (en) | Pattern matching using automatic S/TEM acquisition and metrology of thin slices of known shape | |
| CN111398325A (en) | TEM sample preparation method | |
| JP4357347B2 (en) | Sample processing method and sample observation method | |
| TW201421525A (en) | Method and system for reducing curtaining in charged particle beam sample preparation | |
| CN116359268A (en) | FCBGA blind hole bottom quality analysis method | |
| CN116106591B (en) | Manufacturing method of microwave probe and microwave probe | |
| JP2715288B2 (en) | Method of manufacturing test piece for defect inspection of semiconductor device | |
| JPH03166744A (en) | Microprocessing method for cross section | |
| CN113466268B (en) | Combined sample and preparation method thereof | |
| KR20080058682A (en) | Method for manufacturing specimen for analyzing by transmission electron microscope | |
| JP2000156393A (en) | Board extracting method and electronic component manufacture using the same | |
| KR100744267B1 (en) | specimen manufacturing method for Transmission Electron Microscope | |
| KR100694580B1 (en) | method for manufacturing Transmission Electron Microscope of Specimen for Analyzing | |
| JPH05231998A (en) | Method of manufacture specimen for electron microscopic observation | |
| KR20050112261A (en) | Method of forming sample using analysis by tem | |
| KR20040031279A (en) | method for manufacturing Transmission Electron Microscope of Specimen for Analyzing | |
| CN100399530C (en) | Analysis method | |
| KR100989879B1 (en) | Method for manufacturing a cross-sectional binding device and apparatus using the same | |
| KR100552560B1 (en) | Method for manufacturing specimen for scanning electron microscope | |
| KR20040037958A (en) | apparatus for controlling of cutting angle and method for manufacturing Transmission Electron Microscope of Specimen | |
| US8384029B2 (en) | Cross-section systems and methods | |
| CN116448793A (en) | Material shearing stress in-situ test method under double-beam system | |
| KR20070019341A (en) | Method of fabricating test sample for TEM |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |