KR100989879B1 - Method for manufacturing a cross-sectional binding device and apparatus using the same - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the fabrication of a single-sided coupling device, and a method and an apparatus for manufacturing a single-sided coupling device by cutting a portion of a multi-layered device to form a cutting specimen, and combining the cutting specimen with a pad of a semiconductor device. . When the cross-section coupling device is manufactured in the above manner, damage does not occur in each layer of the cutting specimen, so that the cross-section coupling device exhibiting high quality characteristics can be manufactured, and the optical and electrical characteristics of the cross-section coupling device formed of various structures can be effectively It can be measured by

Description

Method for manufacturing a single-sided coupling device and apparatus for manufacturing a single-sided coupling device using the same {Method for manufacturing a cross-sectional binding device and apparatus using the same}

Embodiments of the present invention relate to the manufacture of a cross-section coupling device, and more particularly, to a method and apparatus for manufacturing a cross-section coupling device by combining a plurality of electronic devices manufactured in a separate process.

Since the manufacturing process of the semiconductor device requires a high degree of precision, there is a need for a method capable of monitoring process defects and the like during the process. Such monitoring may be performed by surface observation using an electron microscope or thickness measurement using optical equipment after each process. However, the above analysis has a limitation in that the structure of the cross section cannot be analyzed. Among the defects that may be a problem in the semiconductor device, the formation of an etched cross section, the gap gap gap filling or the contact open defect are types of defects that can only be analyzed through cross-sectional observation. Because.

Cross-sectional analysis of a semiconductor device may be performed using scanning electron microscopy (SEM) or transmission electron microscopy (TEM), and in some cases, an energy dispersive X-ray coupled to the analysis equipment. Spectroscopy equipment is also used to analyze the types of atoms and their bonding states in each material layer. Specimens required for cross-sectional analysis using a scanning electron microscope can be prepared by physically cutting the wafer, grinding the cross section after physical cutting, or partially etching the cross section with a specific etchant. However, in the case of transmission electron microscopy analysis, it is difficult to prepare the test specimen by the method as described above, because the specimen must be made very thin so that electrons can pass through the test specimen. Specimens for transmission electron microscopy analysis can be prepared by cutting or polishing a specimen for a long time, such a method is excessively time-consuming to prepare the specimen, it is difficult to accurately cut the desired analysis target site. A focused ion beam (FIB) is a device that can cut and mill certain portions of a specimen by accelerating ions to impinge on the specimen. The focused ion beam can focus the ion beam in nanometers, so that the desired area of the specimen can be freely cut. Most of the focused ion beam devices are equipped with a scanning electron microscope so that the sample can be cut while observing the cutting target. .

Meanwhile, the semiconductor device may be manufactured on one substrate, but in some cases, a semiconductor device may be manufactured in the form of a coupling device by electrically coupling a plurality of devices manufactured on different substrates. Such a coupling element may allow each coupled element to process an electrical signal to enable more complex driving. In this case, each element may be coupled in a planar manner or in a cross section. Conventional processes for manufacturing a coupling device by combining a plurality of devices to manufacture a silicon on insulator (I) substrate, or to form a PN junction by combining a P-type semiconductor and an N-type semiconductor Etc. For this purpose, a process of joining two substrates is required. A method of bonding both sides of the substrate using an adhesive or forming a direct bond between the substrates without using the adhesive is used. A method of bonding a substrate using an adhesive is to form an organic or inorganic adhesive layer on one surface of the substrate and then join both substrates by the adhesive force of the adhesive. A direct bonding method is to apply pressure to the substrate at a high temperature of 1000 ° C. or higher. Joining both substrates.

Embodiments of the present invention are to prepare a cutting specimen with an ion focusing beam, and to manufacture a single-side coupling device by coupling the multilayered surface of the cutting specimen to a pad of another semiconductor device, to manufacture a single-side coupling device capable of complex driving.

In addition, by applying an electrical signal to the cutting specimen through the pad of the semiconductor device, it is to efficiently measure the electrical characteristics according to the structure of the multilayer surface.

According to an embodiment of the present invention, a method of manufacturing a cutting specimen including a plurality of layers by cutting a multilayer membrane device, coupling and rotating the cutting specimen to a temporary fixing part, and a probe on one multilayer surface of the rotated cutting specimen Combining the probes with each other; separating the cutting specimens with the probes separated from the temporary fixing portions, and forming another multilayer surface of the cutting specimens separated from the temporary fixing portions with the surface of the semiconductor device including the first pad and the second pad. It provides a method of manufacturing a cross-sectional coupling device comprising the step of contacting and electrically connecting the first pad and the second pad with the cutting specimen.

According to another embodiment of the present invention, the process of cutting the multi-layered film element or the process of separating the cutting specimen coupled to the probe from the temporary fixing portion may be performed by a focused ion beam.

According to another embodiment of the present invention, the process of bonding the cutting specimen to the temporary fixing portion or the coupling of the probe to one multilayer surface of the cutting specimen may be performed by depositing a metal material on the bonding portion.

According to another embodiment of the present invention, the metal material may include at least one component selected from the group consisting of platinum, gold, aluminum, and titanium.

According to another embodiment of the present invention, the cutting specimen may include a metal layer and an insulating layer.

According to another embodiment of the present invention, the method may further include delaminating the cutting specimen.

According to another embodiment of the present invention, the cutting specimen coupled to the temporary fixing portion may be rotated from 0 to 360 degrees.

According to another embodiment of the present invention, the temporary fixing part may be a transmission electron microscope analysis grid.

According to another embodiment of the present invention, the multilayer film device may include the same material layer having a different thickness.

According to still another embodiment of the present invention, the method may further include analyzing the cross section of the cutting specimen by electron microscopic analysis or photochemical analysis.

According to an embodiment of the present invention, a multi-layer film device or a semiconductor device can be fixed, the holder is rotatable, a focused ion beam capable of cutting the multi-layer film device fixed to the holder, a probe coupled to the multi-layer film device, the multi-layer film The present invention provides a device for manufacturing a single-sided coupling device comprising a partial evaporator capable of coupling a device, a probe, a cut multilayer film device, and a pad of a semiconductor device, and a temporary fixing part capable of temporarily fixing and rotating the cut multilayer film device. .

According to another embodiment of the present invention, the holder, the focused ion beam, the probe, the partial evaporator and the temporary fixing part may be installed in one vacuum chamber.

According to another embodiment of the present invention, the probe may move inside the vacuum chamber.

According to another embodiment of the invention, the temporary fixing portion may be coupled to the holder.

According to still another embodiment of the present invention, the method may further include an electron microscope analysis device or an optical analysis device.

Embodiments of the present invention have the following technical effects.

1. Embodiments of the present invention can produce a coupling device capable of more complex drive by electrically connecting the cutting specimen cut the multilayer film device with the pad of another semiconductor device.

2. Embodiments of the present invention can effectively evaluate the electrical properties of the multilayer film device by applying an electrical signal to the cutting specimen through the pad of the semiconductor device.

3. Embodiments of the present invention can be performed in-situ electron microscopy or optical analysis for the cross section of the cut specimen cut in the multilayer film device.

4. Embodiments of the present invention can form a different thickness of the same material layer included in the multi-layer film device for each region to efficiently evaluate the change in electrical characteristics according to the cross-sectional structure of the multi-layer film.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings and examples. All of the configurations of the present invention described below are merely examples for explaining the present invention more easily, and the scope of the present invention is not limited or limited according to the following contents.

Method for manufacturing a cross-section coupling device according to an embodiment of the present invention is to cut a multilayer film device to produce a cutting specimen comprising a plurality of layers, the step of coupling and cutting the cutting specimen to the temporary fixing, the rotated Coupling the probe to one multilayer surface of the cutting specimen, separating the cutting specimen combined with the probe from the temporary fixing portion, and separating the other multilayer surfaces of the cutting specimen separated from the temporary fixing portion of the first pad and the second pad. And contacting the surface of the semiconductor device including a surface and electrically connecting the first pad and the second pad to the cutting piece.

1 is a step for explaining a method of manufacturing a cross-sectional coupling device according to an embodiment of the present invention. Referring to FIG. 1, first, a buffer layer is formed on a surface of a multilayer film element. At this time, prior to the formation of the buffer layer it is possible to determine the position where the buffer layer should be formed using a scanning electron microscope mounted on the same equipment. The multilayer film device is a device in which thin films are laminated by a method such as vacuum deposition, spin coating, or colloid. The thin film layer included in the multilayer film element may be a metal layer, an insulating layer, or a semiconductor layer. The thin film layer may be formed to have a constant thickness in the multilayer film device, but may be formed to have a different thickness in different areas in some cases. The different thickness of the specific thin film layer is intended to enable electrical measurement of different thickness layers, and the measurement efficiency is increased because electrical measurement of various cross-sectional structures can be performed with one multilayer film element. The measurement error resulting from the property deviation between the wafers can also be reduced. As a method of forming the thickness of the specific thin film layer differently, a masking method using a photoresist may be used, and in some cases, a method of performing a process under a condition in which thickness variation occurs may be used. The buffer layer may be made of a metal material such as platinum, gold, aluminum, or titanium, and serves to mark the boundary of the cutting specimen to be cut in the multilayer film element, and at the same time, form an uppermost layer of the multilayer film element, and then connect the electrode to the pad of the semiconductor device. It can be used as. The buffer layer may be formed using a partial evaporator including a beam for activating a precursor for vacuum deposition to supply a specific site, and in this case, a buffer layer patterned in a desired shape may be formed.

Subsequently, the multilayer film element is first cut to a predetermined depth based on the buffer layer. At this time, the predetermined depth is a depth for determining the configuration of the layer included in the cutting specimen. Primary cutting means cutting before the cutting specimen is completely separated in the multilayer film device. That is, in the primary cutting, the cutting specimen is moved or rotated to cut a portion that needs to be cut by using a focused ion beam, and in the subsequent secondary cutting process, separation of the cutting specimen is performed without moving or rotating the holder to which the multilayer membrane component is coupled. It is to leave a part to be cut as possible. The primary cutting may include cutting in a depth direction as well as horizontal cutting at a certain depth. The horizontal cutting may be performed by irradiating the focused ion beam between the gaps formed by the cutting in the depth direction. Horizontal cutting is an essential process for the separation of the cutting specimen, but in some cases it can also be done in secondary cutting. It is also possible to flake the specimen during the first cut of the multilayer device. The delamination process can also be used to prepare specimens for transmission electron microscopy analysis, but can also be used to control the electrical properties of the cutting specimen that will be coupled to the semiconductor device to form the cross-section coupling device. That is, the device characteristics such as capacitance of the cutting specimen can be adjusted to an appropriate level by adjusting the thickness or area of the cutting specimen. Although it is shown in FIG. 1 that the specimen is fixed to the grid and then delaminated, the delamination process of the specimen may be performed at any stage of the process of manufacturing the cross-section coupling device using a focused ion beam.

The probe is then coupled to the first cut cut specimen. The engagement position of the probe is on the buffer layer of the bias during cutting. Coupling of the probe may be performed by contacting the probe to the site to be bonded of the cutting specimen and depositing a metal or insulating layer at the contact site with the partial evaporator used to form the buffer layer. In this case, the probe may be a whisker type probe.

Subsequently, the cutting specimen to which the probe is bound is cut secondarily to completely separate the cutting specimen from the multilayer membrane device. In the secondary cutting, there is no movement or rotation of the holder to which the multilayer film element is fixed. The cutting specimen may include a buffer layer, a metal layer, an insulating layer or a semiconductor layer, and may be an electronic device by itself, for example, a metal-insulator-metal in the form of a capacitor consisting of a metal layer, an insulating layer, and a metal layer. ) Can be an element. As described above, the specimen cut by the focused ion beam does not generate mechanical deformation or damage unlike the cross section cut by grinding, thereby enabling more accurate analysis of the cross section. In addition, even after the cutting specimen is connected to the pad of the semiconductor device to manufacture the cross-section coupling device, the cross section of the cutting specimen is not damaged, and thus the reliability of the cross-section coupling device can be ensured.

Then, the probe coupled to the cutting specimen is moved to fix the cutting specimen to the grid. The fixing of the cutting specimen to the grid is to remove the probe coupled to the cutting specimen, rotate the cutting specimen, and then rejoin the multilayered surface of the cutting specimen. The multi-layered surface of the cut specimen refers to the surface cut in the depth direction of the multilayer film element of the cross section of the cut specimen. Fixing the cutting specimen to the grid may be performed by a partial evaporator used to form the buffer layer. The grid may be coupled to a holder holding the multilayer film element. In addition, the grid may be a transmission electron microscope analysis grid. In this case, in a subsequent step, the transmission electron microscope specimen may be manufactured by delamination by a focused ion beam, and when the transmission electron microscope is installed in the same device, the transmission electron microscope Cross-sectional analysis by can be performed at the same time.

The probe bound to the cutting specimen is then removed. Removal of the probe may be performed by a focused ion beam, and the probe may be removed from the cut specimen by milling a portion of the probe or cut specimen with the focused ion beam.

Subsequently, the cut specimen bonded to the grid is milled with a focused ion beam to flake. The delamination process may be performed in the first cutting process of the test piece, but if it is not done in the first cutting process, it may be performed after removing the probe coupled to the cutting test piece.

The grid is then rotated to change the position of the cut specimen and to couple the probe to the multilayered surface of the cut specimen. Rotation of the grid may be performed by rotating the holder to which the grid is fixed, or may be performed by detaching the holder from the apparatus and then fixing it again with the grid rotated. The latter case involves evacuating the vacuum chamber and taking the holder out. Rotation of the grid can be made in the range of 0 to 360 degrees. If it is rotated 90 degrees, the multilayer plane of the cutting specimen is exposed in the upward direction of the holder. Coupling of the probe can be performed using a partial evaporator.

A portion of the cut specimen is then cut with a focused ion beam to separate the cut specimen from the grid. Coupling of the probe and cutting of the cutting specimen may be performed by a partial evaporator and a focused ion beam, respectively.

The probe is then moved to position the cutting specimen between the pads of the semiconductor device and the probe is removed. The cutting element is positioned so that the multilayer surface opposite the multilayer surface to which the probe is coupled is in contact with the surface of the semiconductor element. That is, the semiconductor element and the cutting element are coupled in a state in which the stacking direction is vertical. A focused ion beam can be used to remove the probe.

Then, the pad of the semiconductor device and the cutting specimen are electrically connected. The pad of the semiconductor device is coupled to a specific layer of the multilayered surface of the cutting specimen, whereby a specific electrical signal can be applied to the cutting specimen through the pad of the semiconductor device. The process of electrically connecting the pad and the cutting specimen of the semiconductor device may be performed by patterning a metal layer using a partial deposition machine. This completes the fabrication of the cross-sectional coupling device in which the semiconductor device and the cutting specimen are combined.

The cross-section coupling device according to embodiments of the present invention is a form in which different kinds of electronic devices are combined. Since the single-sided coupling device couples the single-sided specimen to the pad of the semiconductor device, it can be operated as an electronic device capable of processing more complex signals. The cutting specimen can easily control the characteristics of the device during separation or delamination from the multilayer film device, so that the characteristics of the device can be easily adjusted, and no damage occurs during the cutting process. It becomes possible to manufacture the. In addition, the cross-sectional coupling device according to the embodiments of the present invention can analyze the cross-section of the cross-sectional device in the manufacturing process by electron microscopy and optical analysis, it is possible to reduce the design and process development cost of the device. In addition, since the focused ion beam is used in the process of separating the cutting device from the multilayer film device, since the damage or contamination of the material due to the cutting does not occur, the electrical characteristics of the cross-sectional device can be measured without error.

The pad of the semiconductor device according to the embodiments of the present invention may be installed outside the vacuum chamber. In this case, the cutting specimen may be connected to an electrode pad formed on the insulating substrate, and a signal line may be connected to the electrode pad to be connected to a semiconductor device outside the vacuum chamber. This embodiment of the present invention can be efficiently used to measure the electrical properties of the insulating specimen by producing a cross-section coupling device. That is, by connecting a specific layer of the cutting specimen to measure the electrical characteristics to the electrode pad, and applying a signal for measuring the electrical characteristics from the outside to the electrode pad it is possible to efficiently measure the electrical characteristics of the cutting specimen.

Figure 2 schematically shows an apparatus for manufacturing a cross-section coupling device according to embodiments of the present invention. Referring to FIG. 2, in the apparatus for manufacturing a cross-section coupling device, a scanning electron microscope 101, a focused ion beam 102, a partial evaporator 103, a probe 104, and a sample holder 105 are mounted on a vacuum chamber 100. It is. Although not shown in the drawing, the vacuum chamber is connected to a low vacuum pump, such as a rotary pump, and a high vacuum pump, such as a turbo pump, and has a mass flow controller for controlling the amount of gas supplied to the partial evaporator and the focused ion beam. Gas supply means such as MFC) are connected. The sample holder may fix a multilayer film element, a semiconductor element or a grid, and may move horizontally and vertically, and may rotate. Thus, the desired portion of the multilayer membrane element can be cut by the focused ion beam by moving or rotating the sample holder. Although only a scanning electron microscope, a focused ion beam, a partial evaporator, a probe, and a sample holder are shown in the drawings, additional surface analysis apparatus such as an EDS analysis apparatus may be provided.

Hereinafter, the present invention will be described in more detail with reference to preferred examples. However, these examples are intended to illustrate the present invention in more detail, it will be apparent to those skilled in the art that the scope of the present invention is not limited thereby.

Example

3A to 3J illustrate a process of manufacturing a cross-sectional coupling device according to an embodiment of the present invention, and FIGS. 4A to 4E are scanning electron microscope images of important processes.

First, a multilayer film device, a semiconductor device, and a grid for TEM analysis were fixed to a sample holder of the device for manufacturing a single-sided coupling device and loaded in a vacuum chamber. Multi-film element is a platinum, chromium doped SrZrO _3, and SrRuO ₃ on the silicon substrate are sequentially stacked, the semiconductor element is a state formed by the pad, the grid for TEM analysis was made of a copper grid.

Subsequently, a buffer layer was formed on a part of the surface of the multilayer film element. Referring to FIG. 3A, a rod-shaped buffer layer 301 is formed on the surface of the multilayer film element 300. The buffer layer 301 shows a cut portion using a focused ion beam. The buffer layer 301 was formed by partially depositing platinum.

Next, the area | region in which the buffer layer of the multilayer film element was formed was cut | disconnected primarily with the focused ion beam. 3A is a perspective view of the multilayer film element in which the primary cutting is completed, and (B) is a cross-sectional view taken along the line X-X 'of (A). The primary cutting is a process of cutting up to a stage before the cutting specimen is completely separated from the multilayer film device 300. Therefore, two horizontal axis directions and one vertical axis direction of the buffer layer 301 formed in the shape of a rod are cut with a focused ion beam to a predetermined depth, and the lower portion of the buffer layer 301 is cut horizontally at a predetermined depth to exclude one vertical axis direction. And all parts were cut off. At this time, the cutting in two horizontal axis direction was cut while rotating the sample holder to a certain angle while moving the sample holder in the horizontal or vertical direction. The cutting part in the horizontal axis direction was formed in the form of an inclined trench having a narrower width than the upper part, and horizontal cutting was possible by irradiating a focused ion beam into the space. 4A is a scanning electron microscope image of a multi-layer device during the first cut process. Referring to FIG. 4A, it can be seen that inclined trenches are formed on both sides of the buffer layer in the horizontal axis direction.

The probe was then coupled onto a buffer layer over the first cut multilayer device. 3A is a perspective view of a multilayer film element in which a probe is coupled on a buffer layer in a state where primary cutting is completed, and (B) is a cross-sectional view taken along line X-X 'of (A). Coupling of the probe 302 was made by depositing platinum using a partial evaporator at the contact portion while the probe was in contact with the buffer layer 301.

Subsequently, a primary cut was made and the multilayer membrane element to which the probe was bound was cut secondarily. 3A is a perspective view of a multilayer film element in which secondary cutting is completed, and (B) is a cross-sectional view taken along line X-X '. When the secondary cutting of the multilayer film element is completed, a portion of the multilayer film element including the buffer layer 301 becomes a cutting specimen and is completely separated from the multilayer film element. In this case, the separated cutting specimen is coupled to the probe 302. The secondary cut may be performed at one longitudinal axis of the buffer layer not cut in the primary cut, and may be performed without moving the sample holder since the width of the cut portion is narrow. 4B is a scanning electron microscope image of a multilayer film device having secondary cut completed. Referring to FIG. 4B, trenches in the horizontal and vertical directions are formed around the buffer layer, and the probe is coupled to the buffer layer.

The probe was then moved in a vacuum chamber to join the tip of the cutting specimen to a grid for TEM analysis secured to the sample holder. 3E illustrates a cutting specimen having an end fixed to the grid 303 with the probe 302 coupled thereto. The process of joining the cutting specimen ends to the grid was performed by depositing platinum on the grid and the contact portion of the cutting specimen with a partial evaporator.

The probe bound to the buffer layer of the cut specimen was then removed. 3F illustrates a state in which the probe is removed from the buffer layer 301 of the cutting specimen coupled to the grid 303. When the probe coupled to the buffer layer 301 is separated, the cutting specimen remains fixed to the grid 303. The removal of the probe was performed by cutting the junction between the buffer layer and the probe with a focused ion beam. 4C is a scanning electron microscope image of a cutting specimen coupled to the grid with the probe removed.

The grid on which the cutting specimen was fixed was then rotated 90 degrees and the probe was again bonded to the multilayered surface of the cutting specimen. Rotation of the grid was performed by venting the vacuum chamber and removing the sample holder, then rotating the grid 90 degrees to fix it back to the sample holder and loading the sample holder into the vacuum chamber. Figure 3g shows a state in which the probe is coupled to the cross section of the cutting specimen. The cutting specimen is coupled to the grid 303 while being rotated 90 degrees, and the probe 302 is coupled to the multilayered surface of the cutting specimen. Combination of the probe was performed by depositing platinum on the contacts using a partial evaporator.

Subsequently, a portion of the cut specimen to which the probe was bound was cut to separate the cut specimen from the grid. 3H shows the cut specimen separated from the grid. The cut specimen separated from the grid 303 is coupled to the probe 302. Cutting of the cutting specimens was performed using a focused ion beam. 4D is a scanning electron microscope image of a cut specimen separated from the grid.

The probe was then moved to place the cutting specimen between the pads of the semiconductor device. 3I illustrates a cutting specimen located between pads of a semiconductor device. The cutting specimen 305 is positioned between the first pad 304a and the second pad 304b of the semiconductor device while being coupled to the probe 302, and the multilayered surface of the cutting specimen and the surface of the semiconductor device It comes in contact.

Subsequently, platinum was partially deposited to electrically connect the pad of the semiconductor device and a part of the cutting specimen. The probe was separated from the cutting specimen using a focused ion beam. 3J illustrates a cutting specimen connected to a pad of a semiconductor device. The first pad 304a and the second pad 304b of the semiconductor device are electrically connected to the other layer of the cutting specimen 305 through the platinum layer 306, respectively. 4E is a scanning electron microscope image of a cutting specimen connected to a pad of a semiconductor device. Referring to FIG. 4E, pads of the semiconductor device are shown above and below the scanning electron microscope image, and a cutting specimen is positioned therebetween, and a patterned platinum layer connects the pad and the cutting specimen of the semiconductor device. This completes the manufacture of the cross-section coupling device in which two pads of the semiconductor device and the cutting specimen are electrically connected.

Figure 5 schematically shows the structure of the cross-section coupling device manufactured according to an embodiment of the present invention. Referring to FIG. 4, the cutting specimen is positioned between the pads 501a and 501b of the semiconductor device, and the pads 501a and 501b of the semiconductor device and the specific layer of the cutting specimen are electrically connected by the platinum pattern 507. . The cutting specimen is a platinum layer 502, a strontium zirconium oxide layer (SrZrO ₃ , 503), a platinum layer 504, a titanium layer 505 and a silicon substrate 506 in one embodiment of the present invention This is laminated in order. At this time, the platinum layer 502, which is the uppermost layer of the cut specimen, is a buffer layer deposited during the manufacture of the cut specimen. One of the pads of the semiconductor device 501a is connected to the platinum layer 502, and the other 501b is connected to the platinum layer 504 through the silicon substrate 506 and the titanium layer 505. The cross-sectional coupling device manufactured according to the embodiment of the present invention as described above may be an electronic device capable of processing a more complex signal by controlling a device made of a cutting specimen to control the signal input and output to the pad of the semiconductor device.

1 is a step for explaining a method of manufacturing a cross-sectional coupling device according to an embodiment of the present invention.

Figure 2 schematically shows an apparatus for manufacturing a cross-section coupling device according to an embodiment of the present invention.

3A to 3J illustrate a process of manufacturing a cross-section coupling device according to an embodiment of the present invention.

4A to 4E are scanning electron microscope images of important steps in the process of fabricating the cross-sectional coupling device according to an embodiment of the present invention.

Figure 5 schematically shows the structure of the cross-section coupling device manufactured according to an embodiment of the present invention.

Claims (15)

Cutting a multilayer film device to produce a cutting specimen including a plurality of layers; Coupling and rotating the cutting specimen to a temporary fixture; Coupling the probe to one multilayer surface of the rotated cutting specimen; Separating the cutting specimen to which the probe is coupled from the temporary fixing part; Contacting the other multilayer surface of the cutting specimen separated from the temporary fixing part with a surface of a semiconductor device including a first pad and a second pad; And And forming a metal layer by using a partial evaporator, thereby electrically connecting the first pad and the second pad to the cutting specimen. The method of claim 1, The process of cutting the multi-layer film element or the process of separating the cutting specimen coupled to the probe in the temporary fixing portion is a method of manufacturing a cross-sectional coupling device, characterized in that performed by a focused ion beam. The method of claim 1, Coupling the cutting specimen to a temporary fixing part or coupling the probe to one multilayer surface of the cutting specimen is performed by depositing a metal material on the coupling portion. The method of claim 3, The metal material is a method of manufacturing a cross-sectional coupling device, characterized in that it comprises at least one component selected from the group consisting of platinum, gold, aluminum, titanium. The method of claim 1, The cutting specimen is a method of manufacturing a cross-section coupling device, characterized in that it comprises a metal layer and an insulating layer. The method of claim 1, A method of manufacturing a cross-section coupling device further comprising the step of delaminating the cutting specimen. The method of claim 1, The cutting specimen coupled to the temporary fixing portion is a method of manufacturing a cross-section coupling element, characterized in that the rotation from 0 to 360 degrees. The method of claim 1, The temporary fixing part is a method of manufacturing a cross-sectional coupling device, characterized in that the grid for transmission electron microscope analysis. The method of claim 1, The multilayer film device is a method of manufacturing a cross-sectional coupling device, characterized in that it comprises the same material layer having a different thickness. The method of claim 1, The method of manufacturing a cross-section coupling device further comprising the step of analyzing the cross section of the cutting specimen by electron microscopy or optical analysis. A holder capable of fixing the multilayer film element or the semiconductor element, the holder being rotatable; A focused ion beam capable of cutting the multilayer film element fixed to the holder; A probe coupled to the multilayer film element; A partial evaporator capable of combining the multilayer film element, the probe and the cut multilayer film element, and a pad of the semiconductor element; And And a temporary fixing part capable of temporarily fixing and rotating the cut multilayer film element. And the holder, the focused ion beam, the probe, the partial evaporator, and the temporary fixing part are installed in one vacuum chamber. delete The method of claim 11, The probe is a device for manufacturing a cross-section coupling element, characterized in that the movable inside the vacuum chamber. The method of claim 11, The temporary fixing unit is a device for manufacturing a cross-section coupling element, characterized in that coupled to the holder. The method of claim 11, Apparatus for producing a cross-sectional coupling device further comprises an electron microscope analysis device or an optical analysis device.

Images