CN116344301A - Electrode for simultaneously realizing low-temperature and high-temperature plasma etching process and regulation and control method - Google Patents
Electrode for simultaneously realizing low-temperature and high-temperature plasma etching process and regulation and control method Download PDFInfo
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- CN116344301A CN116344301A CN202111598611.7A CN202111598611A CN116344301A CN 116344301 A CN116344301 A CN 116344301A CN 202111598611 A CN202111598611 A CN 202111598611A CN 116344301 A CN116344301 A CN 116344301A
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- 238000000034 method Methods 0.000 title claims abstract description 84
- 230000008569 process Effects 0.000 title claims abstract description 58
- 238000001020 plasma etching Methods 0.000 title claims abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 139
- 238000010438 heat treatment Methods 0.000 claims abstract description 132
- 238000001816 cooling Methods 0.000 claims abstract description 89
- 238000005530 etching Methods 0.000 claims abstract description 16
- 239000001307 helium Substances 0.000 claims description 67
- 229910052734 helium Inorganic materials 0.000 claims description 67
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 67
- 238000007789 sealing Methods 0.000 claims description 61
- 239000000110 cooling liquid Substances 0.000 claims description 41
- 238000003466 welding Methods 0.000 claims description 39
- 239000007789 gas Substances 0.000 claims description 17
- 239000013307 optical fiber Substances 0.000 claims description 14
- 230000000903 blocking effect Effects 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 12
- 210000001503 joint Anatomy 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 9
- 230000001105 regulatory effect Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 230000002457 bidirectional effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention belongs to the technical field of plasma etching, and particularly relates to an electrode and a regulation and control method for simultaneously realizing low-temperature and high-temperature plasma etching processes, wherein the electrode comprises an electrode body, the electrode body comprises a heating table, a heat conducting plate and a water cooling plate, which are sequentially arranged from top to bottom, the upper surface of the water cooling plate is provided with a heat conducting plate caulking groove at the middle part, and a gap h exists between the bottom of the heat conducting plate caulking groove and the lower surface of the heating table; the heat conducting plate is embedded in the heat conducting plate embedding groove, and the thickness of the heat conducting plate is h1, wherein h1 is less than h; the outer area of the heating table is connected with the outer area of the water cooling plate into a whole in a flange fit connection mode. The regulation and control method comprises regulation and control under two working conditions of high temperature and low temperature; the electrode is used for bearing the wafer, and simultaneously, the proper temperature required by the etching process is provided for the wafer by combining the regulation method.
Description
Technical Field
The invention belongs to the technical field of plasma etching, and particularly relates to an electrode for simultaneously realizing low-temperature and high-temperature plasma etching processes and a regulating and controlling method thereof.
Background
The electrode assembly is used as a mechanism for bearing the wafer in the process, is the most important factor influencing the etching uniformity of the wafer in the whole etching process, and the factor occupying a large proportion in the factors is the temperature of the electrode assembly, and the temperature of the electrode assembly directly influences the surface temperature of the wafer to be etched.
The temperature requirements of the wafer surface are different for different process types, the temperature of the wafer can only be regulated by the temperature of the electrode assembly at this time, and in some special processes, such as the etching process of InP, the temperature of the wafer is required to be very high, sometimes more than 400 ℃ is required, but the conventional electrode scheme is generally applicable to a common rubber ring to directly seal the electrode assemblies and the process chambers, but at the high temperature of more than 400 ℃, the common rubber ring is out of function, so that the equipment leaks air and cannot work normally. In the prior art, the electrodes are integrated, either a high-temperature process or a low-temperature process is performed, that is, a corresponding low-temperature process or/and a corresponding high-temperature process cannot be performed according to actual conditions, so that a special electrode assembly needs to be designed to meet process requirements.
Disclosure of Invention
The invention provides an electrode and a regulating method for simultaneously realizing low-temperature and high-temperature plasma etching processes, wherein the thickness h1 of a heat conducting plate is regulated to regulate the gap h-h1 between the heat conducting plate and a heating table, so that the heat transfer effect between the low temperature of a water cooling plate and the high temperature of the heating table is regulated, and a proper temperature required by the etching process is provided for a wafer.
The technical scheme adopted for solving the technical problems is as follows: the utility model provides an electrode of low temperature and high temperature plasma etching technology is realized simultaneously, includes the electrode body, the electrode body includes heating platform, heat-conducting plate and the water-cooling plate that from the top down set gradually, wherein:
a heat conducting plate caulking groove is formed in the middle of the upper surface of the water cooling plate, and a gap h exists between the bottom of the heat conducting plate caulking groove and the lower surface of the heating table;
the heat conducting plate is embedded in the heat conducting plate embedding groove, and the thickness of the heat conducting plate is h1, wherein h1 is smaller than h;
the outer side area of the heating table is connected with the outer side area of the water cooling plate into a whole in a flange fit connection mode.
As a further preferred aspect of the present invention, the electrode body is provided with a central hole penetrating along a central position, and a first through hole, a second through hole, and a third through hole are respectively provided at the periphery of the central hole;
The first through hole, the second through hole and the third through hole sequentially penetrate through the water cooling plate and the heat conducting plate, and are communicated with blind holes arranged at corresponding positions of the lower structure of the heating table.
As a further preferred aspect of the present invention, the heating stage includes an upper plate and a lower plate that can be connected as one body; the upper layer plate is covered above the lower layer plate, and a heating wire is arranged in the lower layer plate; the lower layer plate is of the lower structure of the heating table; the blind holes are formed in the bottom of the lower layer plate.
As a further preferred aspect of the present invention, further comprising a cylinder shaft assembly of the blind hole mounted on the lower plate, the cylinder shaft assembly comprising a first cylinder shaft, a second cylinder shaft, and a third cylinder shaft, wherein:
the first cylinder shaft penetrates through the first through hole to be in butt joint with one blind hole in the lower layer plate, and a temperature measuring optical fiber is arranged in the first cylinder shaft;
the second cylinder shaft penetrates through the second through hole to be in butt joint with one blind hole in the lower layer plate, and a helium hole for helium to pass through is formed in the second cylinder shaft;
the third cylinder shaft penetrates through the third through hole to be in butt joint with one blind hole in the lower layer plate, and the heating wire is led out from the inside of the third cylinder shaft.
The invention also provides a regulation and control method capable of simultaneously realizing low-temperature and high-temperature plasma etching processes, wherein the regulation and control method comprises regulation and control under two working conditions, one is under a high-temperature working condition, and the other is under a low-temperature working condition, wherein:
under the high-temperature working condition, the specific regulation and control steps of the regulation and control method are as follows:
s1, sealing the outer parts of the first cylinder shaft, the second cylinder shaft and the third cylinder shaft;
s2, setting the temperature required to be reached by the heating table and the temperature of the cooling liquid input into the electrode body;
s3, introducing helium into the helium hole in the second cylinder shaft to enable the helium to fully contact with the bottom of the wafer on the upper layer plate, and heating the heating wire in the third cylinder shaft, wherein the heating table starts to heat;
s4, introducing cooling liquid into the electrode body to cool the water cooling plate, wherein the temperature of the water cooling plate is transferred to the heating table through the heat conducting plate;
s5, feeding back the temperature of the heating table to a computer in real time through a temperature measuring optical fiber in the first cylinder shaft;
step S6, according to the temperature fed back in the step S5, the following judgment is carried out:
When the temperature of the heating table reaches the expected temperature, starting a high-temperature etching process, stopping heating the heating wire, and stopping introducing cooling liquid;
when the temperature of the heating table does not reach the expected temperature, two adjusting modes are adopted, wherein one adjusting mode is to continuously heat through the heating wire, and the other adjusting mode is to continuously heat through the heating wire, and the temperature of the cooling liquid is increased, so that the temperature of the heating table reaches the expected temperature;
and then repeating the steps S5 and S6.
Under the low-temperature working condition, the specific regulation and control steps of the regulation and control method are as follows:
s1, sealing the outer parts of the first cylinder shaft, the second cylinder shaft and the third cylinder shaft;
s2, setting the temperature required to be reached by the heating table and the temperature of the cooling liquid input into the electrode body;
s3, introducing helium into the helium hole in the second cylinder shaft to enable the helium to fully contact with the bottom of the wafer on the upper layer plate, and enabling the heating wire in the third cylinder shaft to start heating or not to work;
s4, introducing cooling liquid into the electrode body to cool the water cooling plate, wherein the temperature of the water cooling plate is transferred to the heating table through the heat conducting plate;
s5, feeding back the temperature of the heating table to a computer in real time through a temperature measuring optical fiber in the first cylinder shaft;
Step S6, according to the temperature fed back in the step S5, the following judgment is carried out:
when the temperature of the heating table reaches the expected temperature, starting a low-temperature etching process, wherein the heating wire does not work, and stopping introducing cooling liquid;
when the temperature of the heating table does not reach the expected temperature, reducing the temperature of the introduced cooling liquid;
and then repeating the steps S5 and S6.
As a further preferred aspect of the present invention, the first cylindrical shaft includes a first thin shaft portion having a thin cylindrical shape for accommodating the temperature measuring optical fiber, and one end of the first thin shaft portion, which is far from the lower plate, is a first distal disc portion having a disc shape for sealing;
the second cylinder shaft comprises a second thin shaft part which is provided with helium passing through and is in a thin cylindrical shape, and one end of the second thin shaft part, which is far away from the lower layer plate, is a second far-end disc part which is used for sealing and is in a disc shape;
the third cylinder shaft comprises a third thin shaft part which is used for accommodating the heating wire and is in a thin cylindrical shape, and one end of the third thin shaft part, which is far away from the lower layer plate, is a third far-end disc part which is used for sealing and is in a disc shape.
As a further preferred aspect of the present invention, in the step S1 of the high temperature working condition and the step S1 of the low temperature working condition, the first cylinder shaft, the second cylinder shaft, and the third cylinder shaft are sealed by a first welded bellows, a second welded bellows, and a third welded bellows, each having a uniform structure, respectively, wherein:
The first welding corrugated pipe is sleeved outside the first cylinder shaft, the top of the first welding corrugated pipe is sealed to the bottom of the water cooling plate, and the bottom of the first welding corrugated pipe is sealed to the bottom of the first far-end disc part;
the second welding corrugated pipe is sleeved outside the second cylinder shaft, the top of the second welding corrugated pipe is in sealing connection with the bottom of the water cooling plate, and the bottom of the second welding corrugated pipe is sealed with the bottom of the second far-end disc part;
the third welding corrugated pipe is sleeved outside the third cylinder shaft, the top of the third welding corrugated pipe is in sealing connection with the bottom of the water cooling plate, and the bottom of the third welding corrugated pipe is sealed with the bottom of the third far-end disc part.
As a further preferred aspect of the present invention, in both the step S3 of the high temperature working condition and the step S3 of the low temperature working condition, helium is introduced into the lower plate through a shunt groove and a plurality of gas homogenizing grooves provided on the lower plate, wherein:
the flow dividing grooves and the plurality of air homogenizing grooves are formed in the top surface of the lower layer plate, and the flow dividing grooves are communicated with the plurality of air homogenizing grooves;
the diversion grooves are communicated with the helium holes and divert helium into the gas homogenizing grooves.
As a further preferred aspect of the present invention, in both the step S3 of the high temperature working condition and the step S3 of the low temperature working condition, helium is introduced into the upper plate through a helium tank and a plurality of air inlet holes provided on the upper plate and fully contacts with the bottom surface of the wafer, wherein:
the helium tank is arranged on the top surface of the upper layer plate, and a plurality of air inlets penetrate through the upper layer plate and are distributed in the helium tank;
the air inlets are communicated with the air homogenizing grooves.
As a further preferable aspect of the present invention, in the step S4 of the high temperature condition and the step S4 of the low temperature condition, the water cooling plate is cooled by introducing a cooling liquid into a liquid passage provided in the water cooling plate, wherein:
the liquid channel is formed by a water blocking plate and a water through groove, the water through groove is formed in the bottom of the water cooling plate, and the water blocking plate is covered on the water through groove.
Through the technical scheme, compared with the prior art, the invention has the following beneficial effects:
1. the electrode adjusts the gap h-h1 between the heat conducting plate and the heating table by adjusting the thickness h1 of the heat conducting plate, so as to adjust the heat transfer effect between the low temperature of the water cooling plate and the high temperature of the heating table.
2. When the temperature of the heating table of the electrode reaches 400 ℃, the existence of the thin shaft part characteristic of the cylinder shaft assembly can greatly reduce the temperature of the heating table in the region, and when the temperature is transferred to the far-end disc part characteristic, the heating table can obtain a relatively low temperature, so that the sealing rings arranged in the first sealing groove and the second sealing groove can be used conveniently.
3. When the temperature of the heating table is higher, the second cylinder shaft has thermal expansion in the axial direction in addition to the radial thermal expansion, and in order to prevent the air leakage phenomenon caused by the position change of the sealing surfaces matched with the first sealing groove and the second sealing groove due to the axial thermal expansion, the bottom sealing of the water cooling plate and the second cylinder shaft is realized by adopting a second welding corrugated pipe; the second welding bellows can satisfy the flexible problem that the axial thermal expansion of second cylinder axle brought, and when second cylinder axle extension or shrink, the bottom flange of second welding bellows can follow the change, can not influence sealed effect.
4. The electrode device provided by the invention realizes low temperature and local temperature reduction by introducing cooling liquid:
under the low-temperature working condition, introducing cooling liquid with proper temperature to realize low temperature;
under the high-temperature working condition, in order to prevent the sealing ring from losing the sealing function due to the overhigh temperature, the cooling liquid in the water through groove can realize cooling of the sealing ring in the third sealing groove; and cooling liquid in each cooling groove cools the sealing rings in each first sealing groove and each second sealing groove.
5. The temperature of the heating table is regulated by the temperature controller, and the temperature of the water cooling plate is regulated by the water chiller, so that a high-temperature plasma etching process and a low-temperature plasma etching process are realized; and under the high-temperature working condition, the temperature of the water cooling plate is regulated and controlled by the water chiller, so that the sealing rings in the sealing grooves are prevented from directly contacting the high temperature.
Drawings
The invention will be further described with reference to the drawings and examples.
FIG. 1 is an exploded schematic view of the overall structure of the present invention;
FIG. 2 is an exploded view of the heating table structure of the present invention;
FIG. 3 is an exploded view b of the heating table structure of the present invention;
FIG. 4 is an exploded view of the water-cooled panel structure of the present invention;
FIG. 5 is an exploded view b of the water-cooled plate structure of the present invention;
FIG. 6 is a schematic cross-sectional view of the present invention;
FIG. 7 is a schematic view of the bottom structure of the water-cooled plate of the present invention;
FIG. 8 is a flow chart of the temperature control of the electrode during the high temperature process of the present invention;
FIG. 9 is a flow chart of the temperature control of the electrode at the time of the low temperature process of the present invention;
fig. 10 is a schematic diagram of the connection between the equipment end and the auxiliary equipment device according to the present invention.
In the figure: 2. an electrode; 201. a joint; 203. a water inlet; 204. an air inlet interface; 205. a water outlet; 50. a heating table; 501. an upper plate; 502. a lower plate; 503. a helium tank; 504. a gas homogenizing groove; 505. a first cylinder shaft; 506. a second cylinder shaft; 507. a third cylinder shaft; 508. a second groove; 509. a first groove; 510. an air inlet hole; 511. a shunt channel; 516. helium holes; 526. a second thin shaft portion; 536. a second distal disc portion; 546. a first seal groove; 556. a second seal groove; 60. a water cooling plate; 601. a central bore; 602. a water passage groove; 603. a water shutoff plate; 604. a water dividing joint; 606. a first through hole; 607. a second through hole; 608. a third through hole; 609. a third seal groove; 70. a heat conductive plate; 80. a second welded bellows; 801. a second cooling tank; 90. a first welded bellows; 100. and thirdly welding the corrugated pipe.
Detailed Description
The invention will now be described in further detail with reference to the accompanying drawings. The drawings are simplified schematic representations which merely illustrate the basic structure of the invention and therefore show only the structures which are relevant to the invention.
In the description of the present invention, it should be understood that the terms "left", "right", "upper", "lower", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and "first", "second", etc. do not indicate the importance of the components, and thus are not to be construed as limiting the present invention. The specific dimensions adopted in the present embodiment are only for illustrating the technical solution, and do not limit the protection scope of the present invention.
Example 1
The present example provides a preferred embodiment, an electrode for simultaneously performing low temperature and high temperature plasma etching processes, as shown in fig. 1 and 10, where the electrode 2 is located at the very center of the process chamber for carrying the wafer while providing the wafer with the proper temperature for the etching process.
As shown in fig. 1, the electrode 2 is mainly divided into 3 parts, namely a heating table 50, a water cooling plate 60 and a heat conducting plate 70, and the heating table 50, the heat conducting plate 70 and the water cooling plate 60 are arranged in sequence from top to bottom.
The electrode 2 further comprises an electrode body, wherein the electrode body penetrates through the center position, a center hole 601 is formed in the electrode body, and the center hole 601 is used for installing a thimble lifting mechanism; the periphery of the central hole 601 is respectively provided with a first through hole 606, a second through hole 607 and a third through hole 608, and the first through hole 606, the second through hole 607 and the third through hole 608 sequentially penetrate through the water cooling plate 60 and the heat conducting plate 70 and are communicated with blind holes arranged at corresponding positions of the lower structure of the heating table 50.
As shown in fig. 2, the heating table 50 includes an upper plate 501 and a lower plate 502 which can be integrally connected, the upper plate 501 is disposed above the lower plate 502, and the lower plate 502 is internally provided with heating wires. The lower plate 502 is a lower structure of the heating table 50; the blind holes are formed in the bottom of the lower plate 502.
As shown in fig. 2 and 3, the upper plate 501 is a thin plate, and a first groove 509 is formed on the upper surface of the upper plate 501 by grooving toward the lower surface, and the first groove 509 is used for limiting the position of the wafer. The bottom surface of the first groove 509 is provided with a helium tank 503, and preferably, the helium tank 503 includes a plurality of circular grooves with the bottom center of the first groove 509 as the center of the circle and a plurality of linear grooves with the bottom center of the first groove 509 as the divergence points and diverged to the periphery. A plurality of air inlets 510 are formed on the lower surface of the upper plate 501 at positions corresponding to the helium grooves 503, so that helium is introduced into the helium grooves 503 through the plurality of air inlets 510, and then the helium spreads in the helium grooves 503, so that the helium can be uniformly distributed on the back surface of the wafer, the helium transfers the temperature of the heating table 50 to the back surface of the wafer, and the temperature of the heating table 50 is controlled, so that the temperature control on the surface of the wafer can be realized.
As shown in fig. 2 and 3, the lower plate 502 has a disk shape, and a junction surface between the lower plate 502 and the upper plate 501 is provided with a diversion groove 511 and a plurality of gas-homogenizing grooves 504, and helium gas introduced from the bottom of the lower plate 502 is diverted into each gas-homogenizing groove 504 through the diversion groove 511. Preferably, the gas homogenizing groove 504 is formed by at least two circular grooves with different diameters with the center of the upper surface of the lower plate 502 as the center, and the circular grooves on the gas homogenizing groove 504 correspond to the circular grooves on the helium groove 503.
Helium gas introduced from the bottom of the lower plate 502 passes through the diversion groove 511, is diverted into the gas homogenizing groove 504 by the diversion groove 511 for dispersion, and then propagates into the helium gas groove 503 through the gas inlet 510, so that the helium gas is uniformly distributed on the back of the wafer to a great extent, and better cooling and heating are achieved. The lower plate 502 is internally provided with heating wires for heating the whole heating table 50 during the high temperature process. The bottom surface of the lower plate 502 has a second groove 508, and the depth of the second groove 508 ranges from 3 mm to 5mm.
A cylindrical shaft assembly is installed at the blind hole on the lower plate 502, the cylindrical shaft assembly comprises a first cylindrical shaft 505, a second cylindrical shaft 506 and a third cylindrical shaft 507, the cylindrical shaft assembly penetrates through the first through hole 606 to be in butt joint with one blind hole on the lower plate 502, a temperature measuring optical fiber is installed in the first cylindrical shaft 505, and the temperature measuring optical fiber is used for detecting the temperature of the heating table 50 and realizing accurate temperature control; the second cylinder shaft 506 passes through the second through hole 607 to be in butt joint with one blind hole on the lower layer plate 502, a helium hole 516 for passing helium is formed in the second cylinder shaft 506, the installation position of the helium hole 516 is coaxial with the opening position of the shunt groove 511, and the shunt groove 511 is communicated with the helium hole 516; the helium hole 516 is connected with the air inlet interface 204, so that helium enters the helium hole 516 through the air inlet interface 204, then helium enters the diversion groove 511 through the helium hole 516, then the helium is dispersed in the gas homogenizing groove 504, and helium enters the helium groove 503 from the plurality of air inlet holes 510 and is uniformly distributed in the helium groove 503; the third cylinder shaft 507 passes through the third through hole 608 to be in butt joint with one blind hole on the lower layer plate 502, and the heating wire is led out from the inside of the third cylinder shaft 507.
Further, each cylinder shaft of the cylinder shaft assembly has a thin cylindrical feature and a distal disc feature, that is, the first cylinder shaft 505 includes a thin cylindrical first thin shaft portion and a disc-shaped first distal disc portion disposed at an end of the first thin shaft portion remote from the lower plate 502; the second cylindrical shaft 506 includes a second thin shaft portion 526 having a thin cylindrical shape and a second distal disc portion 536 having a disc shape provided at an end of the second thin shaft portion 526 remote from the lower plate 502; the third cylindrical shaft 507 includes a third thin shaft portion having a thin cylindrical shape and a third distal disc portion having a disc shape disposed at an end of the third thin shaft portion remote from the lower plate 502.
Further, the water cooling plate 60 includes a water through groove 602 and a water blocking plate 603, the water through groove 602 is formed at the bottom of the water cooling plate 60, preferably, the water through groove 602 is distributed along the bottom surface of the water cooling plate 60, and occupies the bottom surface of the water cooling plate 60 to the greatest extent when avoiding the first through hole 606, the second through hole 607, the third through hole 608 and the central hole 601; the shape of the water blocking plate 603 is consistent with that of the water through groove 602, the water blocking plate 603 is arranged on the water through groove 602 in a covering mode, and the water inlet 203 and the water outlet 205 are arranged on one side, away from the water through groove 602, of the water blocking plate 603, so that a liquid channel for cooling liquid to circulate is formed between the water blocking plate 603 and the water through groove 602; preferably, the water blocking plate 603 is connected with the water through groove 602 by adopting a welding mode, and is matched with the water inlet 203 and the water outlet 205, so that cooling liquid can circulate in the liquid channel to cool the water blocking plate 603 and parts mounted on the water blocking plate 603. A plurality of water diversion connectors 604 are further arranged on one side of the water shutoff plate 603 away from the water through groove 602.
The present embodiment further includes a first welded bellows 90, a second welded bellows 80, and a third welded bellows 100, and the first welded bellows 90, the second welded bellows 80, and the third welded bellows 100 are identical in structure. The first welded bellows 90 is sleeved outside the first cylinder shaft 505, the top of the first welded bellows 90 is connected with the bottom of the water cooling plate 60 in a sealing manner, and the bottom of the first welded bellows 90 is connected with the first distal disc part in a sealing manner; the second welded bellows 80 is sleeved outside the second cylinder shaft 506, the top of the second welded bellows 80 is connected with the bottom of the water cooling plate 60 in a sealing manner, and the bottom of the second welded bellows 80 is connected with the second distal disc 536 in a sealing manner; the third welded bellows 100 is sleeved outside the third cylinder shaft 507, the top of the third welded bellows 100 is in sealing connection with the bottom of the water cooling plate 60, and the bottom of the third welded bellows 100 is in sealing connection with the third distal disc portion.
Further, as shown in fig. 6, a first seal groove 546 and a second seal groove 556 are concentrically disposed between the bottom of the second welded bellows 80 and the second distal disc portion 536, and seal rings are installed in both the first seal groove 546 and the second seal groove 556. When the temperature of the heating table 50 reaches about 400 ℃, the presence of the second thin shaft portion 526 of the second cylindrical shaft 506 can cause the temperature of the heating table 50 to be significantly reduced in this region, and then a relatively low temperature can be obtained when the temperature is transferred to the second distal disc portion 536; that is, the temperature is transferred through the second thin shaft portion 526 of the second cylindrical shaft 506, and there is a buffering period, and the temperature is reduced to a certain extent, so that the sealing rings in the first sealing groove 546 and the second sealing groove 556 are not directly contacted with high temperature, thereby ensuring the use effect of the sealing rings in the first sealing groove 546 and the second sealing groove 556, and ensuring that the sealing rings in the first sealing groove 546 and the second sealing groove 556 still have the function of preventing air leakage when the temperature of the heating table 50 reaches about 400 ℃.
Further, when the temperature of the heating stage 50 is higher, the second cylindrical shaft 506 may have thermal expansion in the axial direction, that is, in the vertical direction of fig. 6, in addition to thermal expansion in the radial direction, in order to prevent a gas leakage phenomenon caused by a change in the position of the sealing surfaces of the first sealing groove 546 and the second sealing groove 556 that are matched due to the thermal expansion in the axial direction, the bottom sealing between the water cooling plate 60 and the second cylindrical shaft 506 is implemented by using the second welded bellows 80, a third sealing groove 609 is disposed at a coaxial position between the bottom of the water cooling plate 60 and the second welded bellows 80, a sealing ring installed in the third sealing groove 609 is pressed between the top of the second welded bellows 80 and the water cooling plate 60, and the bottom of the second welded bellows 80 presses the sealing ring installed in the first sealing groove 546 and the second sealing groove 556.
Preferably, the first welded bellows 90, the second welded bellows 80 and the third welded bellows 100 are all finished products, and are all made of a soft compressible and stretchable metal bellows arranged between an upper flange and a bottom flange. This feature can satisfy the problem of expansion and contraction caused by the axial thermal expansion of the second cylinder shaft 506, and when the second cylinder shaft 506 is extended or contracted, the bottom flange of the second welded bellows 80 can follow the change without affecting the sealing effect. Similarly, the problem of expansion caused by the axial thermal expansion of the first cylinder shaft 505 can be solved, and when the first cylinder shaft 505 is expanded or contracted, the bottom flange of the first welding bellows 90 can follow the change, so that the sealing effect of the bottom flange of the first welding bellows 90 is not affected; the expansion and contraction problem caused by the axial thermal expansion of the third cylinder shaft 507 can be satisfied, and when the third cylinder shaft 507 is expanded or contracted, the bottom flange of the third welding bellows 100 can follow the change, so that the sealing effect of the bottom flange of the third welding bellows 100 is not affected.
Further, in order to ensure that the seal rings installed in the first seal groove 546 and the second seal groove 556 can be sufficiently cooled, the use safety is improved. The second cooling groove 801 is disposed inside the bottom flange of the second welded bellows 80, preferably, the second cooling groove 801 may be communicated with the water through groove 602 in the water cooling plate 60, and the joint 201 mounted on the bottom flange of the second welded bellows 80 is connected with a water diversion joint 604 welded on the water shutoff plate 603 through a water pipe, so as to realize communication between the second cooling groove 801 and the water through groove 602. As shown in fig. 7, when the cooling liquid is circulated through the water passage 602 to cool the liquid cooling plate 60, the bottom flange of the second welded bellows 80 may be cooled simultaneously, and the bottom flange of the second welded bellows 80 may transfer the low temperature to the second distal disc portion 536 to cool the seal ring mounted on the second distal disc portion 536.
Further, the first cylinder shaft 505 and the third cylinder shaft 507 operate in the same cooling mode as the second cylinder shaft 506. That is, a first cooling groove is formed in the bottom flange of the first welded bellows 90, and the first cooling groove connects the joint 201 mounted on the bottom flange of the first welded bellows 90 with a water diversion joint 604 welded on the water shutoff plate 603 through a water pipe, so that the first cooling groove is communicated with the water through groove 602, and is cooled. The third cooling groove is formed in the bottom flange of the third welded bellows 100, the joint 201 mounted on the bottom flange of the third welded bellows 100 is connected with a water diversion joint 604 welded on the water shutoff plate 603 through a water pipe, and the third cooling groove is communicated with the water through groove 602.
The electrode 2 can realize low-temperature plasma etching and high-temperature plasma etching. When high-temperature plasma etching is performed, the heating wire in the heating table 50 works to heat the electrode 2 to a set temperature, and at the moment, cooling liquid with a certain temperature is introduced into the liquid channel to cool all sealing rings, so that the vacuum degree of etching equipment is ensured to be normal. When the low-temperature plasma etching process is performed, the heating wire inside the heating table 50 is operated at a low temperature or not, but due to the existence of the plasma at the upper part of the electrode 2, the heating table 50 is continuously heated, and the accurate temperature control cannot be realized, at this time, the low temperature of the water cooling plate 60 needs to be transferred to the heating table 50, and the heat conducting plate 70 has the function of adjusting the temperature transfer effect between the heating table 50 and the water cooling plate 60.
The thickness of the heat conducting plate 70 is h1, and h1< h, the heat conducting plate 70 is screwed on the water cooling plate 60, and a gap h-h1 exists between the upper part of the heat conducting plate 70 and the heating table 50. In the practical application process, the gap h-h1 between the heat conducting plate 70 and the heating table 50 is adjusted by adjusting the thickness h1 of the heat conducting plate 70, so as to adjust the heat transfer effect between the low temperature of the water cooling plate 60 and the high temperature of the heating table 50. If the heat conducting plate 70 is found to transfer a large amount of low temperature of the water cooling plate 60 to the heating table 50 during the etching process, which affects the temperature uniformity of the heating table 50, the heat conducting plate 70 with a smaller thickness can be replaced; in the low temperature process, the temperature of the heating table 50 is found to be too high, and the heat-conducting plate 70 with a larger thickness can be replaced, so that the cooling efficiency is improved.
As shown in fig. 10, the connection between the equipment end and the auxiliary device is schematically shown, the embodiment further comprises a computer, a temperature controller and a water chiller, wherein the computer and the temperature controller perform bidirectional transmission, and the computer and the water chiller perform bidirectional transmission; the temperature controller is also connected with a heating wire in the third cylinder shaft 507, and a temperature measuring optical fiber in the first cylinder shaft 505 transmits a signal to the temperature controller; the water chiller is respectively connected with a water inlet 203 and a water outlet 205 which are arranged on the water shutoff plate 603.
Fig. 8 and 9 are temperature control flow diagrams of the electrode when the high temperature process and the low temperature process are performed, respectively, when the high temperature process and the low temperature process are performed, the actual temperature of the surface of the heating table 50 is fed back through the temperature measuring optical fiber arranged at the bottom of the electrode 2, signals are fed back to a computer end, a temperature controller is controlled through the computer end, and the input power of the heating table 50 and the temperature of the output cooling liquid of the water chiller are set, so that the ideal process temperature is achieved. The etching process of the scheme can meet the conditions of-30-400 ℃, and the optimal process temperature range of the machine is about 0-260 ℃ according to the actual process.
As shown in fig. 8, the specific flow of temperature control of the electrode 2 in the high temperature process is as follows (the high temperature is 180 degrees celsius or more):
Step S1, sealing the first cylindrical shaft 505, the second cylindrical shaft 506, and the third cylindrical shaft 507 by the first welded bellows 90, the second welded bellows 80, and the third welded bellows 100, respectively;
step S2, setting the temperature required to be reached by the heating table 50 and the temperature of the cooling liquid input into the electrode body;
step S3, introducing helium into the helium hole 516 in the second cylinder shaft 506 to make the helium fully contact with the bottom of the wafer on the upper plate 501, and controlling the heating wire in the third cylinder shaft 507 by the temperature controller, wherein the heating table 50 starts to heat;
step S4, cooling liquid is introduced into the electrode body to cool the water cooling plate 60, and the temperature of the water cooling plate 60 is transferred to the heating table 50 through the heat conducting plate 70;
specifically, the water chiller is filled with cooling liquid through a water pipe into a connector 201 arranged on a water inlet 203 and a water outlet 205, so that the cooling liquid is filled into a liquid channel; the cooling liquid in the liquid channel is respectively introduced into the first cooling groove in the first welding corrugated pipe 90, the second cooling groove in the second welding corrugated pipe 80 and the third cooling groove in the third welding corrugated pipe 100 through the water diversion interface 604;
Step S5, feeding back the temperature of the heating table 50 to a computer in real time by using a temperature measuring optical fiber in the first cylinder shaft 505;
step S6, according to the temperature fed back in the step S5, the following judgment is carried out:
when the temperature of the heating table 50 reaches the expected temperature, starting a high-temperature etching process, stopping heating the heating wire, and stopping introducing cooling liquid into the cold water machine;
when the temperature of the heating table 50 does not reach the expected temperature, there are two adjusting modes, one is to continue to raise the temperature through the heating wire, and the other is to raise the temperature of the cooling liquid, so that the temperature of the heating table 50 reaches the expected temperature;
and then repeating the steps S5 and S6.
As shown in fig. 9, the specific flow of temperature control of the electrode in the low temperature process is as follows (the low temperature is below 20 ℃):
step S1, sealing the first cylindrical shaft 505, the second cylindrical shaft 506, and the third cylindrical shaft 507 by the first welded bellows 90, the second welded bellows 80, and the third welded bellows 100, respectively;
step S2, setting the temperature required to be reached by the heating table 50 and the temperature of the cooling liquid input into the electrode body;
step S3, introducing helium into the helium holes 516 in the second cylinder shaft 506 to make the helium fully contact with the bottom of the wafer on the upper plate 501, and simultaneously heating or not working the heating wire in the third cylinder shaft 507;
Step S4, cooling liquid is introduced into the electrode body to cool the water cooling plate 60, and the temperature of the water cooling plate 60 is transferred to the heating table 50 through the heat conducting plate 70;
specifically, the water chiller is filled with cooling liquid through a water pipe into a connector 201 arranged on a water inlet 203 and a water outlet 205, so that the cooling liquid is filled into a liquid channel; the cooling liquid in the liquid channel is respectively introduced into the first cooling groove in the first welding corrugated pipe 90, the second cooling groove in the second welding corrugated pipe 80 and the third cooling groove in the third welding corrugated pipe 100 through the water diversion interface 604;
step S5, feeding back the temperature of the heating table 50 to a computer in real time by using a temperature measuring optical fiber in the first cylinder shaft 505;
step S6, according to the temperature fed back in the step S5, the following judgment is carried out:
when the temperature of the heating table 50 reaches the expected temperature, starting a low-temperature etching process, and stopping introducing cooling liquid by the water chiller;
wherein, the heating wire is heated in the step S3, the heating wire stops heating in the step S6, the heating wire does not work in the step S3, and the heating wire still does not work in the step S6;
when the temperature of the heating table 50 does not reach the expected temperature, the computer controls the water chiller to reduce the temperature of the introduced cooling liquid;
And then repeating the steps S5 and S6.
It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The meaning of "and/or" as referred to in this application means that each exists alone or both.
As used herein, "connected" means either a direct connection between elements or an indirect connection between elements via other elements.
With the above-described preferred embodiments according to the present invention as an illustration, the above-described descriptions can be used by persons skilled in the relevant art to make various changes and modifications without departing from the scope of the technical idea of the present invention. The technical scope of the present invention is not limited to the description, but must be determined according to the scope of claims.
Claims (12)
1. The utility model provides an electrode of low temperature and high temperature plasma etching technology is realized simultaneously, includes the electrode body, its characterized in that: the electrode body includes heating platform (50), heat conduction board (70) and water-cooling board (60) that from the top down set gradually, wherein:
a heat conducting plate caulking groove is formed in the upper surface of the water cooling plate (60) at the middle position, and a gap h exists between the bottom of the heat conducting plate caulking groove and the lower surface of the heating table (50);
the heat conducting plate (70) is embedded in the heat conducting plate embedding groove, and the thickness of the heat conducting plate (70) is h1, wherein h1 is smaller than h;
the outer side area of the heating table (50) and the outer side area of the water cooling plate (60) are connected into a whole in a flange fit connection mode.
2. An electrode for simultaneously performing low temperature and high temperature plasma etching processes according to claim 1, wherein: the electrode body is provided with a central hole (601) along the central position in a penetrating way, and a first through hole (606), a second through hole (607) and a third through hole (608) are respectively arranged at the periphery of the central hole (601);
the first through holes (606), the second through holes (607) and the third through holes (608) sequentially penetrate through the water cooling plate (60) and the heat conducting plate (70) and are communicated with blind holes arranged at corresponding positions of the lower structure of the heating table (50).
3. An electrode for simultaneously performing low temperature and high temperature plasma etching processes according to claim 2, wherein: the heating table (50) comprises an upper plate (501) and a lower plate (502) which can be connected into a whole; the upper layer plate (501) is arranged above the lower layer plate (502) in a covering mode, and heating wires are arranged in the lower layer plate (502); the lower layer plate (502) is a lower structure of the heating table (50); the blind holes are formed in the bottom of the lower layer plate (502).
4. An electrode for simultaneously performing low temperature and high temperature plasma etching processes according to claim 3, wherein: still including install on lower plate (502) the drum axle subassembly of blind hole, drum axle subassembly includes first drum axle (505), second drum axle (506) and third drum axle (507), wherein:
the first cylinder shaft (505) passes through the first through hole (606) to be in butt joint with one blind hole on the lower layer plate (502), and a temperature measuring optical fiber is arranged in the first cylinder shaft (505);
the second cylinder shaft (506) penetrates through the second through hole (607) to be in butt joint with one blind hole on the lower layer plate (502), and a helium hole (516) for passing helium is formed in the second cylinder shaft (506);
The third cylinder shaft (507) penetrates through the third through hole (608) to be in butt joint with one blind hole in the lower layer plate (502), and heating wires are supplied to the inside of the third cylinder shaft (507) to be led out.
5. A regulation and control method capable of simultaneously realizing low-temperature and high-temperature plasma etching process is characterized in that: the regulation and control method uses the electrode of the etching process of claim 4, the regulation and control method comprises regulation and control under two working conditions, one is under a high-temperature working condition and the other is under a low-temperature working condition, wherein:
under the high-temperature working condition, the specific regulation and control steps of the regulation and control method are as follows:
step S1, sealing the outside of the first cylinder shaft (505), the second cylinder shaft (506) and the third cylinder shaft (507);
step S2, setting the temperature required to be reached by the heating table (50) and the temperature of the cooling liquid input into the electrode body;
step S3, introducing helium into the helium hole (516) in the second cylinder shaft (506) to enable the helium to fully contact with the bottom of the wafer on the upper layer plate (501), and heating a heating wire in the third cylinder shaft (507), wherein the heating table (50) starts to heat;
S4, introducing cooling liquid into the electrode body to cool the water cooling plate (60), wherein the temperature of the water cooling plate (60) is transferred to the heating table (50) through the heat conducting plate (70);
s5, feeding back the temperature of the heating table (50) to a computer in real time through a temperature measuring optical fiber in the first cylinder shaft (505);
step S6, according to the temperature fed back in the step S5, the following judgment is carried out:
when the temperature of the heating table (50) reaches the expected temperature, starting a high-temperature etching process, stopping heating the heating wire, and stopping introducing cooling liquid;
when the temperature of the heating table (50) does not reach the expected temperature, two adjusting modes are adopted, wherein one adjusting mode is to continuously heat through the heating wire, and the other adjusting mode is to continuously heat through the heating wire, and the temperature of the cooling liquid is increased, so that the temperature of the heating table (50) reaches the expected temperature;
and then repeating the steps S5 and S6.
6. Under the low-temperature working condition, the specific regulation and control steps of the regulation and control method are as follows:
step S1, sealing the outside of the first cylinder shaft (505), the second cylinder shaft (506) and the third cylinder shaft (507);
step S2, setting the temperature required to be reached by the heating table (50) and the temperature of the cooling liquid input into the electrode body;
Step S3, introducing helium into the helium hole (516) in the second cylinder shaft (506) to enable the helium to fully contact with the bottom of the wafer on the upper layer plate (501), and enabling the heating wire in the third cylinder shaft (507) to start heating or not to work;
s4, introducing cooling liquid into the electrode body to cool the water cooling plate (60), wherein the temperature of the water cooling plate (60) is transferred to the heating table (50) through the heat conducting plate (70);
s5, feeding back the temperature of the heating table (50) to a computer in real time through a temperature measuring optical fiber in the first cylinder shaft (505);
step S6, according to the temperature fed back in the step S5, the following judgment is carried out:
when the temperature of the heating table (50) reaches the expected temperature, starting a low-temperature etching process, wherein the heating wire does not work, and stopping introducing cooling liquid;
when the temperature of the heating table (50) does not reach the expected temperature, reducing the temperature of the introduced cooling liquid;
and then repeating the steps S5 and S6.
7. The method for adjusting and controlling the low-temperature and high-temperature plasma etching process simultaneously according to claim 5, wherein the method comprises the following steps: the first cylinder shaft (505) comprises a first thin shaft part which is used for accommodating the temperature measuring optical fiber and is in a thin cylindrical shape, and one end of the first thin shaft part, which is far away from the lower layer plate (502), is a first far-end disc part which is used for sealing and is in a disc shape;
The second cylinder shaft (506) comprises a second thin cylindrical shaft part (526) for helium to pass through, and one end of the second thin shaft part (526) far away from the lower layer plate (502) is a second disc-shaped far-end disc part (536) for sealing;
the third cylinder shaft (507) comprises a third thin shaft part which is used for accommodating the heating wire and is in a thin cylindrical shape, and one end of the third thin shaft part, which is far away from the lower layer plate (502), is a third far-end disc part which is used for sealing and is in a disc shape.
8. The method for adjusting and controlling the low-temperature and high-temperature plasma etching process simultaneously according to claim 5, wherein the method comprises the following steps: in step S1 of the high temperature working condition and step S1 of the low temperature working condition, the first cylinder shaft (505), the second cylinder shaft (506) and the third cylinder shaft (507) are sealed respectively through a first welding corrugated pipe (90), a second welding corrugated pipe (80) and a third welding corrugated pipe (100) which are identical in structure, wherein:
the first welding corrugated pipe (90) is sleeved outside the first cylinder shaft (505), the top of the first welding corrugated pipe (90) is sealed to the bottom of the water cooling plate (60), and the bottom of the first welding corrugated pipe (90) is sealed to the bottom of the first far-end disc part;
The second welding corrugated pipe (80) is sleeved outside the second cylinder shaft (506), the top of the second welding corrugated pipe (80) is in sealing connection with the bottom of the water cooling plate (60), and the bottom of the second welding corrugated pipe (80) is sealed with the bottom of the second far-end disc part (536);
the third welding corrugated pipe (100) is sleeved outside the third cylinder shaft (507), the top of the third welding corrugated pipe (100) is in sealing connection with the bottom of the water cooling plate (60), and the bottom of the third welding corrugated pipe (100) is sealed with the bottom of the third far-end disc part.
9. The method for adjusting and controlling the low-temperature and high-temperature plasma etching process simultaneously according to claim 5, wherein the method comprises the following steps: in the step S3 of the high-temperature working condition and the step S3 of the low-temperature working condition, helium is introduced into the lower layer plate (502) through a diversion groove (511) and a plurality of gas homogenizing grooves (504) which are arranged on the lower layer plate (502), wherein:
the splitter boxes (511) and the plurality of gas homogenizing grooves (504) are all arranged on the top surface of the lower layer plate (502), and the splitter boxes (511) are all communicated with the plurality of gas homogenizing grooves (504);
The diversion groove (511) is communicated with the helium holes (516) and diverts helium into each of the gas homogenizing grooves (504).
10. An electrode for simultaneously performing low temperature and high temperature plasma etching processes according to claim 8, wherein: in the step S3 of the high-temperature working condition and the step S3 of the low-temperature working condition, helium is introduced into the upper layer plate (501) through a helium tank (503) and a plurality of air inlets (510) which are arranged on the upper layer plate (501) and fully contacted with the bottom surface of the wafer, wherein:
the helium tank (503) is arranged on the top surface of the upper layer plate (501), and a plurality of air inlets (510) penetrate through the upper layer plate (501) and are distributed in the helium tank (503);
the air inlet holes (510) are communicated with the air homogenizing grooves (504).
11. The method for adjusting and controlling the low-temperature and high-temperature plasma etching process simultaneously according to claim 9, wherein the method comprises the following steps: in the step S4 of the high-temperature working condition and the step S4 of the low-temperature working condition, cooling liquid is introduced into a liquid channel on the water cooling plate (60) to cool the water cooling plate (60), wherein:
the liquid channel is formed by a water blocking plate (603) and a water through groove (602), the water through groove (602) is formed in the bottom of the water cooling plate (60), and the water blocking plate (603) is arranged on the water through groove (602) in a covering mode.
12. The method for adjusting and controlling the low-temperature and high-temperature plasma etching process simultaneously according to claim 5, wherein the method comprises the following steps: still include first cooling tank, second cooling tank (801) and third cooling tank, wherein:
the first cooling groove is formed in the bottom flange of the first welding corrugated pipe (90), and is connected with the water through groove (602) through a water pipe;
the second cooling groove (801) is formed in the bottom flange of the second welding corrugated pipe (80), and the second cooling groove (801) is connected with the water through groove (602) through a water pipe;
the third cooling groove is formed in the bottom flange of the third welding corrugated pipe (100), and the third cooling groove is connected with the water through groove (602) through a water pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111598611.7A CN116344301A (en) | 2021-12-24 | 2021-12-24 | Electrode for simultaneously realizing low-temperature and high-temperature plasma etching process and regulation and control method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111598611.7A CN116344301A (en) | 2021-12-24 | 2021-12-24 | Electrode for simultaneously realizing low-temperature and high-temperature plasma etching process and regulation and control method |
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| CN116344301A true CN116344301A (en) | 2023-06-27 |
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| CN202111598611.7A Pending CN116344301A (en) | 2021-12-24 | 2021-12-24 | Electrode for simultaneously realizing low-temperature and high-temperature plasma etching process and regulation and control method |
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| CN (1) | CN116344301A (en) |
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