CN116318015A - Millimeter wave ultra-wideband power divider capable of being integrated on chip - Google Patents

Millimeter wave ultra-wideband power divider capable of being integrated on chip Download PDF

Info

Publication number
CN116318015A
CN116318015A CN202310364508.9A CN202310364508A CN116318015A CN 116318015 A CN116318015 A CN 116318015A CN 202310364508 A CN202310364508 A CN 202310364508A CN 116318015 A CN116318015 A CN 116318015A
Authority
CN
China
Prior art keywords
transmission line
line structure
lumped element
element equivalent
equivalent transmission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310364508.9A
Other languages
Chinese (zh)
Inventor
许进
靳子凡
周国庆
杜祎晴
蒲嘉阳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northwestern Polytechnical University
Original Assignee
Northwestern Polytechnical University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northwestern Polytechnical University filed Critical Northwestern Polytechnical University
Priority to CN202310364508.9A priority Critical patent/CN116318015A/en
Publication of CN116318015A publication Critical patent/CN116318015A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/46—Networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

The invention discloses an on-chip integrated millimeter wave ultra-wideband power divider, which relates to the technical field of power divider design and comprises one path of input end, four sections of pi-type lumped element equivalent transmission line structures, two parallel resistor-capacitor isolation circuits and two paths of output ends. The invention adopts a four-section pi-type lumped element equivalent transmission line structure, and the inductance in the pi-type lumped element equivalent transmission line structure is coupled, so that the bandwidth of the power divider can be expanded, and a wider working frequency is realized. The back of each section of pi-type lumped element equivalent transmission line structure of the two paths of output ends is connected with a parallel resistance capacitance isolation circuit in a bridging mode, impedance matching is achieved, and isolation between ports of the two output ports is improved.

Description

Millimeter wave ultra-wideband power divider capable of being integrated on chip
Technical Field
The invention relates to the technical field of power divider design, in particular to a millimeter wave ultra-wideband power divider capable of being integrated on a chip.
Background
The power divider belongs to one of important passive devices, and has the main function of dividing one signal energy into two or more paths of smaller power signals. Typically the characteristics of the output signal are determined by the structure of the power divider, and two or more paths of the same-direction, opposite-direction or orthogonal-direction output can be realized through different structures.
The power distribution devices commonly used in engineering include T-junction power dividers, wilkinson power dividers and the like. The power divider typically takes the form of a three-port network, typically in the form of a 3dB aliquot, but also in the form of an unequal. When used for power splitting, one input signal is split into two or more smaller signals. The power divider has wide application in microwave radio frequency circuits such as phased array radars, high-power devices and the like.
The traditional power divider adopts a microstrip line structure, and a microstrip line is used for realizing a quarter-wavelength transmission line, but the microstrip line structure under the corresponding frequency generally occupies a large area, and the requirements of the traditional millimeter wave system on the miniaturization and the high system integration level of the power divider are not met.
The traditional wilkinson power divider adopts an isolation resistor added between output ports to improve the isolation between ports, and after the wilkinson power divider is realized by adopting lumped elements, the wilkinson power divider sometimes cannot meet the requirement of related systems on broadband.
Disclosure of Invention
The invention provides an on-chip integrated millimeter wave ultra-wideband power divider, which adopts two inductors to mutually wind to realize mutual inductance coupling, expands the bandwidth of the power divider and solves the problem of low bandwidth of the traditional Wilkinson power divider.
The invention provides an on-chip integrated millimeter wave ultra-wideband power divider, which comprises:
one path of input end and two paths of output ends are used for inputting and outputting signals;
the first section pi-type lumped element equivalent transmission line structure and the third section pi-type lumped element equivalent transmission line structure are used for expanding bandwidth and are sequentially connected in series between one path of input end and one path of output end;
the second section pi-type lumped element equivalent transmission line structure and the fourth section pi-type lumped element equivalent transmission line structure are used for expanding bandwidth and are sequentially connected in series between one input end and the other output end;
the first capacitor isolation circuit is connected between the first pi-type lumped element equivalent transmission line structure and the second pi-type lumped element equivalent transmission line structure in a bridging manner;
and the second capacitance isolation circuit is connected between the third-section pi-type lumped element equivalent transmission line structure and the fourth-section pi-type lumped element equivalent transmission line structure in a bridging manner.
Preferably, the first section pi-type lumped element equivalent transmission line structure, the second section pi-type lumped element equivalent transmission line structure, the third section pi-type lumped element equivalent transmission line structure and the fourth section pi-type lumped element equivalent transmission line structure are all equivalent circuits of a transmission line with quarter wavelength.
Preferably, the first and second pi-type lumped element equivalent transmission line structures and the third and fourth pi-type lumped element equivalent transmission line structures are symmetrical about the input end central line.
Preferably, the first pi-type lumped element equivalent transmission line structure and the second pi-type lumped element equivalent transmission line structure are the same, and each of them includes:
one end of the first inductor is connected with one path of input end;
one end of the first capacitor is connected with one input end, and the other end of the first capacitor is grounded;
and one end of the second capacitor is connected with the other end of the first inductor, and the other end of the second capacitor is grounded.
Preferably, two of the first inductors are intertwined.
Preferably, the third-segment pi-type lumped element equivalent transmission line structure and the fourth-segment pi-type lumped element equivalent transmission line structure are the same, and each of them includes:
one end of the second inductor is connected with the other end of the first inductor, and the other end of the second inductor is connected with any one output end;
one end of the third capacitor is connected with the other end of the first inductor, and the other end of the third capacitor is grounded;
and one end of the fourth capacitor is connected with the other end of the second inductor, and the other end of the fourth capacitor is grounded.
Preferably, two of said second inductors are intertwined.
Preferably, the first capacitive isolation circuit includes:
the two ends of the fifth capacitor are respectively connected with the other ends of the two first inductors;
and the two ends of the first resistor are respectively connected with the other ends of the two first inductors.
Preferably, the second capacitive isolation circuit includes:
the two ends of the sixth capacitor are respectively connected with the other ends of the two second inductors;
and the two ends of the second resistor are respectively connected with the other ends of the two second inductors.
Preferably, the size of the power divider is 424 μm×333 μm.
Compared with the prior art, the invention has the beneficial effects that:
the invention adopts a four-section pi-type lumped element equivalent transmission line structure, and the inductance in the pi-type lumped element equivalent transmission line structure is coupled, so that the bandwidth of the power divider can be expanded, and a wider working frequency is realized. The back of each section of pi-type lumped element equivalent transmission line structure of the two paths of output ends is connected with a parallel resistance capacitance isolation circuit in a bridging mode, impedance matching is achieved, and isolation between ports of the two output ports is improved.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic circuit diagram of an on-chip integratable millimeter wave ultra-wideband power divider of the present invention;
fig. 2 is a top view of an on-chip integratable millimeter wave ultra-wideband power divider of the present invention;
fig. 3 is a side view of an on-chip integratable millimeter wave ultra-wideband power divider of the present invention;
fig. 4 is a top view of two first inductor structures of the present invention;
fig. 5 is a side view of two first inductor structures of the present invention;
fig. 6 is a top view of two second inductor structures of the present invention;
fig. 7 is a side view of two second inductor structures of the present invention;
fig. 8 is a schematic diagram of simulation results of an on-chip integratable millimeter wave ultra-wideband power divider according to the present invention;
fig. 9 is a schematic diagram of port isolation simulation of an on-chip integratable millimeter wave ultra-wideband power divider according to the present invention.
In the figure: 1-first section pi-type lumped element equivalent transmission line structure, 2-second section pi-type lumped element equivalent transmission line structure, 3-third section pi-type lumped element equivalent transmission line structure, 4-fourth section pi-type lumped element equivalent transmission line structure, 5-first capacitor, 6-first inductor, 7-second capacitor, 8-second inductor, 9-third capacitor, 10-fourth capacitor, 11-first isolation circuit, 12-fifth capacitor, 13-first resistor, 14-second isolation circuit, 15-sixth capacitor and 16-second resistor.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, the invention provides an on-chip integrated millimeter wave ultra-wideband power divider, which comprises one input end, four-section pi-type lumped element equivalent transmission line structures, two parallel resistance capacitance isolation circuits and two output ends. The signal is input from the input end and is connected with the two output ends through the four-section pi-type lumped element equivalent transmission line structure. The two paths of output ends are respectively provided with two sections of pi-type lumped element equivalent transmission line structures, and the inductors in the pi-type lumped element equivalent transmission line structures are coupled, so that the bandwidth of the power divider can be expanded. The parallel resistance capacitance isolation circuit is bridged behind each section of pi-type lumped element equivalent transmission line structure of the two paths of output ends, so that the isolation between ports of the two paths of output ends can be improved.
The four-section pi-type lumped element equivalent transmission line structure comprises a first-section pi-type lumped element equivalent transmission line structure 1, a second-section pi-type lumped element equivalent transmission line structure 2, a third-section pi-type lumped element equivalent transmission line structure 3 and a fourth-section pi-type lumped element equivalent transmission line structure 4. The first section pi-type lumped element equivalent transmission line structure 1 and the third section pi-type lumped element equivalent transmission line structure 3 are sequentially connected in series between one input end and one output end. The second-section pi-type lumped element equivalent transmission line structure 2 and the fourth-section pi-type lumped element equivalent transmission line structure 4 are sequentially connected in series between one input end and the other output end.
The first section pi-type lumped element equivalent transmission line structure 1, the second section pi-type lumped element equivalent transmission line structure 2, the third section pi-type lumped element equivalent transmission line structure 3 and the fourth section pi-type lumped element equivalent transmission line structure 4 are all equivalent circuits of a transmission line with quarter wavelength.
The first section pi-type lumped element equivalent transmission line structure 1, the second section pi-type lumped element equivalent transmission line structure 2, the third section pi-type lumped element equivalent transmission line structure 3 and the fourth section pi-type lumped element equivalent transmission line structure 4 are symmetrical about the input end central line.
The first-section pi-type lumped element equivalent transmission line structure 1 and the second-section pi-type lumped element equivalent transmission line structure 2 are the same and each comprises a first capacitor 5, a first inductor 6 and a second capacitor 7. One end of the first inductor 6 is connected with one input end, and the first capacitor 5 and the second capacitor 7 are positioned on the left side and the right side of the first inductor 6. One end of the first capacitor 5 is connected with one input end, and the other end is grounded. One end of the second capacitor 7 is connected with the other end of the first inductor 6, and the other end is grounded.
In this embodiment, there is coupling between the two first inductors 6, and mutual inductance coupling is achieved by winding the two inductors with each other, so as to expand the bandwidth of the power divider. Two first inductors 6 are connected to each other at one end and to the input signal via a center tap.
The third-section pi-type lumped element equivalent transmission line structure 3 and the fourth-section pi-type lumped element equivalent transmission line structure 4 are the same and comprise a second inductor 8, a third capacitor 9 and a fourth capacitor 10, one end of the second inductor 8 is connected with the other end of the first inductor 6, and the other end of the second inductor is connected with any output end. The third capacitor 9 and the fourth capacitor 10 are located on the left and right sides of the second inductance 8. One end of the third capacitor 9 is connected with the other end of the first inductor 6, and the other end is grounded. One end of the fourth capacitor 10 is connected with the other end of the second inductor 8, and the other end is grounded.
In this embodiment, there is coupling between the two second inductors 8, and mutual inductance coupling is achieved by winding the two inductors with each other, so as to expand the bandwidth of the power divider. The center tap is split into two to form a four-port device.
The two parallel rc isolation circuits comprise a first 11 and a second 14 capacitive isolation circuit. The first capacitive isolation circuit 11 and the second capacitive isolation circuit 14 are located at a neutral line position. The first capacitive isolation circuit 11 is connected between the first segment pi-type lumped element equivalent transmission line structure 1 and the second segment pi-type lumped element equivalent transmission line structure 2 in a bridging manner. The second capacitive isolation circuit 14 is connected across the third segment pi-type lumped element equivalent transmission line structure 3 and the fourth segment pi-type lumped element equivalent transmission line structure 4.
The first capacitive isolation circuit 11 comprises a fifth capacitor 12 and a first resistor 13 connected in parallel. The second capacitive isolation circuit 14 includes a sixth capacitor 15 and a second resistor 16 connected in parallel to improve the isolation between the ports between the two output terminals.
Referring to fig. 2 and 3, the power divider proposed by the present invention has dimensions of 424 μm×333 μm.
Referring to fig. 4-7, the mutual coupling inductance in the present invention is achieved by intertwining two leg inductances. During the wire extension process, if other wires are located closer to the inductive wire, the inductive wire with high frequency will be coupled with other wires, such as the cross structure in fig. 3 and 4. In this example, in order to keep the high-frequency metal routing thickness approximately consistent in the cross structure, a structure of a lower layer thick metal wire is realized in a via bonding mode between two thinner metal layers in a 0.13 μm BiCMOS chip processing technology. The structure is beneficial to reducing the energy loss in the inductor and improving the performance of the inductor.
Referring to fig. 8 and 9, the on-chip ultra-wide power divider characteristics of the present invention are simulated. Simulation results show that the return loss of the power divider is better than 10dB in the range of 10-80GHz, and the insertion loss in the working frequency is 4.1dB-5.4dB. The isolation between ports is better than 10dB in the range of 20-80GHz, and the majority of the area in the passband is better than 9dB.
The millimeter wave ultra-wideband power divider capable of being integrated on a chip provided by the invention adopts a passive lumped device to realize the millimeter wave ultra-wideband power divider capable of being integrated on a chip, and particularly replaces a quarter-wavelength transmission line with an LC circuit. The size of the circuit is greatly reduced, and the circuit is favorable for realizing high integration. Compared with the traditional microwave power divider, the microwave power divider has the advantages of small circuit size, wide working bandwidth, high circuit integration level and the like, and can be better suitable for the development of the conventional millimeter wave technology and communication technology.
The invention designs and models lumped devices based on a 0.13 mu m chip-on-chip processing technology, the capacitor adopts the MIM capacitor, the inductor adopts the spiral inductor, and the two inductors are mutually wound to realize mutual inductance coupling, thereby expanding the bandwidth of the power divider and solving the problem of the too low bandwidth of the traditional Wilkinson power divider. The proposed millimeter wave ultra wideband power divider, which can be integrated on-chip, can be used in the power distribution network part in the T/R-module (Transmitter and Receiver).
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.

Claims (10)

1. An on-chip integrated millimeter wave ultra-wideband power divider, comprising:
one path of input end and two paths of output ends are used for inputting and outputting signals;
the first section pi-type lumped element equivalent transmission line structure (1) and the third section pi-type lumped element equivalent transmission line structure (3) are used for expanding bandwidth and are sequentially connected in series between one path of input end and one path of output end;
the second section pi-type lumped element equivalent transmission line structure (2) and the fourth section pi-type lumped element equivalent transmission line structure (4) are used for expanding bandwidth and are sequentially connected in series between one input end and the other output end;
the first capacitance isolation circuit (11) is connected between the first section pi-type lumped element equivalent transmission line structure (1) and the second section pi-type lumped element equivalent transmission line structure (2) in a bridging manner;
and the second capacitance isolation circuit (14) is connected between the third-section pi-type lumped element equivalent transmission line structure (3) and the fourth-section pi-type lumped element equivalent transmission line structure (4) in a bridging mode.
2. An on-chip integratable millimeter wave ultra wideband power divider as claimed in claim 1, wherein the first segment pi-type lumped element equivalent transmission line structure (1), the second segment pi-type lumped element equivalent transmission line structure (2), the third segment pi-type lumped element equivalent transmission line structure (3) and the fourth segment pi-type lumped element equivalent transmission line structure (4) are all equivalent circuits of a quarter-wavelength transmission line.
3. An on-chip integratable millimeter wave ultra wideband power divider as claimed in claim 1, wherein the first segment pi-type lumped element equivalent transmission line structure (1) and the second segment pi-type lumped element equivalent transmission line structure (2) and the third segment pi-type lumped element equivalent transmission line structure (3) and the fourth segment pi-type lumped element equivalent transmission line structure (4) are symmetric about the input center line.
4. An on-chip integratable millimeter wave ultra wideband power divider as claimed in claim 1, wherein said first segment pi-type lumped element equivalent transmission line structure (1) and said second segment pi-type lumped element equivalent transmission line structure (2) are identical, each comprising:
one end of the first inductor (6) is connected with one input end;
one end of the first capacitor (5) is connected with one input end, and the other end of the first capacitor is grounded;
and one end of the second capacitor (7) is connected with the other end of the first inductor (6), and the other end of the second capacitor is grounded.
5. An on-chip integratable millimeter wave ultra wideband power divider as claimed in claim 4, characterized in that two of said first inductors (6) are intertwined.
6. An on-chip integratable millimeter wave ultra-wideband power divider as claimed in claim 4, wherein the third segment pi-type lumped element equivalent transmission line structure (3) and the fourth segment pi-type lumped element equivalent transmission line structure (4) are identical, each comprising:
one end of the second inductor (8) is connected with the other end of the first inductor (6), and the other end of the second inductor is connected with any one output end;
one end of the third capacitor (9) is connected with the other end of the first inductor (6), and the other end of the third capacitor is grounded;
and one end of the fourth capacitor (10) is connected with the other end of the second inductor (8), and the other end of the fourth capacitor is grounded.
7. An on-chip integratable millimeter wave ultra wideband power divider as claimed in claim 6, characterized in that two of said second inductors (8) are intertwined.
8. An on-chip integratable millimeter wave ultra wideband power divider as claimed in claim 5, wherein said first capacitive isolation circuit (11) comprises:
a fifth capacitor (12) with two ends respectively connected with the other ends of the two first inductors (6);
and the first resistor (13) is connected with the fifth capacitor (12) in parallel, and two ends of the first resistor (13) are respectively connected with the other ends of the two first inductors (6).
9. An on-chip integratable millimeter wave ultra wideband power divider as claimed in claim 7, wherein said second capacitive isolation circuit (14) comprises:
a sixth capacitor (15) with two ends respectively connected with the other ends of the two second inductors (8);
and the second resistor (16) is connected with the sixth capacitor (15) in parallel, and two ends of the second resistor (16) are respectively connected with the other ends of the two second inductors (8).
10. An on-chip integratable millimeter wave ultra-wideband power divider as recited in claim 1, wherein said power divider has dimensions of 424 μm x 333 μm.
CN202310364508.9A 2023-04-07 2023-04-07 Millimeter wave ultra-wideband power divider capable of being integrated on chip Pending CN116318015A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310364508.9A CN116318015A (en) 2023-04-07 2023-04-07 Millimeter wave ultra-wideband power divider capable of being integrated on chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310364508.9A CN116318015A (en) 2023-04-07 2023-04-07 Millimeter wave ultra-wideband power divider capable of being integrated on chip

Publications (1)

Publication Number Publication Date
CN116318015A true CN116318015A (en) 2023-06-23

Family

ID=86794108

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310364508.9A Pending CN116318015A (en) 2023-04-07 2023-04-07 Millimeter wave ultra-wideband power divider capable of being integrated on chip

Country Status (1)

Country Link
CN (1) CN116318015A (en)

Similar Documents

Publication Publication Date Title
US10270146B2 (en) Ultra wide band digital phase shifter
US10230348B2 (en) Sub-network enhanced reflectionless filter topology
WO2017128678A1 (en) Capacitive load-based ultra wide band constant value phase shifter
CN112002979B (en) Filtering power divider and communication system
CN102832434A (en) Equal power splitter integrating band-pass filtering function
CN104078726B (en) Parallel connection type one side elliptic function line filter
CN103338016A (en) Lumped-parameter 90-degree quadrature coupler with harmonic suppression function
JP2022530687A (en) Power dividers, adjustment methods, power distribution methods, storage media, and electronic devices
Fathelbab The synthesis of a class of branch-line directional couplers
CN116318015A (en) Millimeter wave ultra-wideband power divider capable of being integrated on chip
CN103338017A (en) Lumped-parameter wideband 180-degree coupler with harmonic suppression function
CN110768642A (en) Broadband negative group delay microwave circuit with flat group delay characteristic
Peng et al. Ku-band compact Wilkinson power divider based on multi-tap inductor technique in 65-nm CMOS
Sakagami et al. On a lumped element three-branch 3-dB coupler with Butterworth and Chebyshev characteristics
CN112271419B (en) Ultra-wideband digital phase shifter with all-pass filter structure
CN114256573A (en) Microstrip low-pass filter and design method thereof
JP2008054174A (en) 90-degree hybrid circuit
CN104078727B (en) Tandem type one side elliptic function line filter
CN110545080A (en) microwave broadband power equalizer based on microstrip
CN108281743B (en) On-chip integrated compact broadband power divider
CN114464973B (en) Reconfigurable filter attenuator based on continuously adjustable center frequency
CN216872227U (en) High out-of-band rejection duplexer
CN217387498U (en) Power divider and electronic equipment
Sakagami Derivation of two-and three-branch lumped element codirectional couplers and their frequency characteristics
CN115987239A (en) Compact Wilkinson power divider based on gallium arsenide IPD process

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination