CN116316069A - High-speed laser and manufacturing method thereof - Google Patents
High-speed laser and manufacturing method thereof Download PDFInfo
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- CN116316069A CN116316069A CN202211103499.XA CN202211103499A CN116316069A CN 116316069 A CN116316069 A CN 116316069A CN 202211103499 A CN202211103499 A CN 202211103499A CN 116316069 A CN116316069 A CN 116316069A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000001228 spectrum Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 10
- 238000000407 epitaxy Methods 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 230000003071 parasitic effect Effects 0.000 abstract description 8
- 230000009286 beneficial effect Effects 0.000 abstract description 6
- 238000013461 design Methods 0.000 abstract description 3
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1231—Grating growth or overgrowth details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
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- Semiconductor Lasers (AREA)
Abstract
The invention discloses a high-speed laser and a manufacturing method thereof, wherein the laser comprises a substrate and an active layer positioned above the substrate, and the active layer comprises a lower limiting layer, a quantum well layer and an upper limiting layer; the two sides of the active layer are respectively a P-type InP layer and an N-type InP layer, and a transverse P-i-N junction is formed together; a P-type InGaAs layer is arranged above the P-type InGaAs layer, a P-type electrode layer is arranged above the P-type InGaAs layer, an N-type electrode layer is arranged above the N-type InP layer, and current is transversely injected; and a grating layer is arranged above the active layer, and the surface grating period is designed to be that the lasing wavelength and the gain spectrum peak wavelength have negative detuning, and the detuning quantity is 10-20nm. The invention reduces the parasitic capacitance of the laser by adopting the transverse current injection structure, thereby being beneficial to high-speed modulation application; and the lasing wavelength and the peak wavelength of the gain spectrum adopt a negative detuning design to improve the differential gain so as to improve the bandwidth.
Description
Technical Field
The invention belongs to the field of semiconductor lasers, and particularly relates to a high-speed laser and a manufacturing method thereof.
Background
The exponential growth of communication systems and network-based multimedia applications such as video streaming and cloud services has driven the need for low cost, low power consumption and high bandwidth optical transceivers, particularly for optical interconnections between data centers and data centers. Direct modulation lasers have the advantages of low power consumption, low cost, and small size compared to external modulation lasers, and are now widely used in data center applications. With the rapid development of cloud computing and other applications, data center traffic is greatly increasing, and the modulation rate of direct modulation lasers is required to be continuously upgraded.
Factors affecting the modulation bandwidth of the laser are mainly: relaxation oscillation frequency, damping effect, and chip parasitic parameters. Relaxation oscillation frequency f r Can be expressed as:
wherein v is g Is the group velocity, q is the electron charge, Γ is the optical confinement factor of the active region, η i Is internal quantum efficiency, dg/dN is differential gain, I b Is bias current, I th Is the threshold current and V is the active region volume. It is known that increasing the differential gain is advantageous for achieving a large relaxation oscillation frequency. By setting the lasing wavelength to the left of the peak wavelength of the gain spectrum, a large differential gain can be achieved. When neglecting damping effect, the small signal 3dB bandwidth f of the laser 3dB ＝1.55f r 。
Conventional semiconductor lasers are p-i-n structures along the epitaxial growth direction, and in order to reduce the parasitic capacitance of the chip, conventional methods use benzocyclobutene (BCB) or polyimide electrode filling processes, which result in complex processes.
Disclosure of Invention
In order to solve the technical problems in the prior art, the invention provides a high-speed laser and a manufacturing method thereof, which can effectively reduce parasitic capacitance of the laser and simultaneously reduce process complexity.
The technical scheme adopted by the invention is as follows:
a high-speed laser comprises a substrate and an active layer positioned above the substrate, wherein the active layer comprises a lower limiting layer, a quantum well layer and an upper limiting layer; the two sides of the active layer are respectively a P-type InP layer and an N-type InP layer, and a transverse P-i-N junction is formed together; a P-type InGaAs layer is arranged above the P-type InGaAs layer, a P-type electrode layer is arranged above the P-type InGaAs layer, an N-type electrode layer is arranged above the N-type InP layer, and current is transversely injected;
and a grating layer is arranged above the active layer, and the surface grating period is designed to be that the lasing wavelength and the gain spectrum peak wavelength have negative detuning, and the detuning quantity is 10-20nm.
Further, intrinsic InP layers are arranged on two sides of the transverse p-i-n junction, and oxide layers are arranged above the grating layers and the intrinsic InP layers on two sides.
Further, the oxide layer is SiO 2 A layer.
Further, the substrate is a semi-insulating InP substrate, and the quantum well layer is an AlGaInAs multiple quantum well layer.
Further, the surface grating is an InP-based grating or a silicon-based grating.
A manufacturing method of a high-speed laser comprises the following steps:
epitaxially growing an undoped active layer on a selected region of the substrate, wherein the active layer comprises a lower limiting layer, a quantum well layer and an upper limiting layer;
the undoped InP layer is epitaxially grown on two sides and above the active layer, and P-InP and N-InP areas are formed on two sides of the active region through Zn thermal diffusion and Si ion implantation respectively, so that a transverse P-i-N junction is formed;
growing a heavily doped P-InGaAs layer in a selected region above the P-InP;
manufacturing a surface grating on an InP layer above an active layer, wherein the period of the surface grating is designed to be that the lasing wavelength and the peak wavelength of a gain spectrum have negative detuning, and the detuning quantity is 10-20nm;
and respectively evaporating a P-type electrode and an N-type electrode above the P-InGaAs layer and the N-InP layer.
Further, the doping concentration of Zn thermal diffusion and Si ion implantation is 5e17-1e18cm -3 The doping concentration of P-InGaAs is 2e19cm -3 。
Further, after forming a surface grating on the InP layer above the active layer by electron beam exposure EBL, P is usedECVD deposition of a layer of SiO 2 As a passivation film.
A manufacturing method of a high-speed laser comprises the following steps:
epitaxially growing an undoped active layer on a selected region of the substrate, wherein the active layer comprises a lower limiting layer, a quantum well layer and an upper limiting layer;
growing N-InP on two sides of the active region by secondary epitaxy;
removing N-InP on one side of the active region through a photoetching process, and growing P-InP on the one side of the active region in a third epitaxy mode to form a transverse P-i-N junction;
growing a heavily doped P-InGaAs layer in a selected region above the P-InP;
manufacturing a surface grating above the active layer, wherein the period of the surface grating is designed to be that the lasing wavelength and the peak wavelength of the gain spectrum have negative detuning, and the detuning quantity is 10-20nm;
and respectively manufacturing a P-type electrode and an N-type electrode above the P-InGaAs layer and the N-InP layer.
Further, ALD is used to deposit a layer of SiO on the grating 2 As a passivation film.
Compared with the prior art, the invention has the following advantages:
the invention provides a transverse current injection laser structure, which realizes a transverse p-i-n structure, is beneficial to reducing the parasitic capacitance of the laser, is beneficial to high-speed modulation and has simple process; the surface grating structure is adopted, so that a secondary epitaxial process of a buried grating is avoided, and the process complexity is reduced; the active region adopts AlGaInAs multiple quantum wells, the lasing wavelength is designed at the left side of the peak wavelength of the gain spectrum, and the tuning amount is 10-20nm, so that the differential gain is improved, and the bandwidth is further improved.
Drawings
FIG. 1 is a top view of a laser structure according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a laser structure according to an embodiment of the present invention;
FIG. 3 is an active area epitaxy schematic;
FIG. 4 is a schematic diagram of epitaxial growth of intrinsic InP;
FIG. 5 is a schematic illustration of Zn thermal diffusion and Si ion implantation to form P-InP and N-InP, respectively;
FIG. 6 is a schematic diagram of epitaxially grown N-InP;
FIG. 7 is a schematic diagram of epitaxially grown P-InP;
fig. 8 is a schematic cross-sectional view of a laser structure according to another embodiment of the present invention.
In the figure: 1-substrate, 21-upper confinement layer, 22-quantum well layer, 23-lower confinement layer, 3-grating layer, 4-P type InP layer, 5-N type InP layer, 6-P type InGaAs layer, 7-P type electrode, 8-N type electrode, 9-intrinsic InP layer, and 10-oxide layer.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention. In addition, the technical features of the embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
The invention discloses a high-speed semiconductor laser and a manufacturing method thereof, wherein the high-speed semiconductor laser comprises a substrate and an active layer positioned above the substrate, wherein the active layer comprises a lower limiting layer, a quantum well layer and an upper limiting layer; the two sides of the active layer are respectively a P-type InP layer and an N-type InP layer, and a transverse P-i-N junction is formed together; a P-type InGaAs layer is arranged above the P-type InGaAs layer, a P-type electrode layer is arranged above the P-type InGaAs layer, an N-type electrode layer is arranged above the N-type InP layer, and current is transversely injected; and a grating layer is arranged above the active layer, and the surface grating period is designed to be that the lasing wavelength and the gain spectrum peak wavelength have negative detuning, and the detuning quantity is 10-20nm. The invention reduces the parasitic capacitance of the laser by adopting a transverse current injection structure, thereby being beneficial to high-speed modulation application; and the lasing wavelength and the peak wavelength of the gain spectrum adopt a negative detuning design to improve the differential gain so as to improve the bandwidth.
In the invention, the y-axis direction is the epitaxial growth direction of the laser, namely the height direction; the x-axis direction is the laser transverse direction, i.e., the width direction; the z-axis direction is the laser light emitting direction, i.e., the length direction.
The high-speed DFB laser of the invention, its structural plan view and cross section are as shown in figure 1 and figure 2, from left to right sequentially along the horizontal direction is oxide layer 10 and intrinsic InP layer 9 below it, P-type electrode 7 and P-type InGaAs layer 6 below it and P-type InP layer 4, oxide layer and grating layer 3 below it, N-type electrode 8 and N-type InP layer 5 below it, oxide layer 10 and intrinsic InP layer 9 below it; the semi-insulating InP substrate 1, the lower confinement layer 23, the quantum well layer 22, the upper confinement layer 21, the grating layer 3, the oxide layer 10, and the electrode layer are sequentially arranged from bottom to top along the growth direction of the epitaxial layer. Width of active region (w 0 ) The laser cavity length is 200-500 μm and is 0.5-2 μm. Wherein, the grating layer is made of EBL.
The quantum well layer is AlGaInAs multi-quantum well, the lasing wavelength and the gain spectrum peak wavelength adopt a negative detuning design, and the detuning amount is 10-20nm.
Example 1: as shown in fig. 3, 4 and 5, an undoped active layer is epitaxially grown on a semi-insulating InP substrate, the active layer including a lower confinement layer, a quantum well layer and an upper confinement layer; the undoped InP layer is epitaxially grown on two sides and above the active layer; forming P-InP and N-InP regions on two sides of the active region by Zn thermal diffusion and Si ion implantation respectively, wherein the doping concentration is 5e17-1e18cm -3 Forming a transverse p-i-n junction; growing a heavily doped P-InGaAs layer in a selected region above the P-InP with a doping concentration of 2e19cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The surface grating is formed on the InP layer of the grating region by electron beam Exposure (EBL), and the grating period is designed such that the lasing wavelength has negative detuning with the gain spectrum peak wavelength, and the detuning amount is 20nm. Deposition of a SiO layer by PECVD 2 As a passivation film. And respectively evaporating a P-type electrode and an N-type electrode above the P-InGaAs layer and the N-InP layer. The laser length L is 500 μm. The manufactured laser structure has low parasitic capacitance and high differential gain, and is beneficial to realizing high-speed modulation.
Example 2: as shown in fig. 6, 7 and 8, an undoped active layer is epitaxially grown on a semi-insulating InP substrate, the active layer including a lower confinement layer, a quantum well layer and an upper confinement layer; the secondary epitaxy grows N-InP on two sides of the active region, and the doping concentration is 5e17 to the extent1e18cm -3 The method comprises the steps of carrying out a first treatment on the surface of the Removing N-InP on one side of the active region by photoetching process, and growing P-InP on the one side of the active region by third epitaxy, wherein the doping concentration is 5e17-1e18cm -3 A lateral p-i-n junction is formed. A surface grating is formed on the InP layer by electron beam Exposure (EBL), the grating period being designed to have a negative detuning of the lasing wavelength from the peak wavelength of the gain spectrum by 20nm. Deposition of a layer of SiO by ALD 2 As a passivation film. And finally, depositing a contact layer and metal in the electrode area to form the electrode. The laser length L is 500 μm. The manufactured laser structure has low parasitic capacitance and high differential gain, and is beneficial to realizing high-speed modulation.
The surface grating in the laser structure of the present invention is not limited to InP-based gratings, but may be, for example, silicon-based gratings, etc.
It should be noted that each step/component described in the present application may be split into more steps/components, or two or more steps/components or part of the operations of the steps/components may be combined into new steps/components, as needed for implementation, to achieve the object of the present invention.
It will be readily appreciated by those skilled in the art that the foregoing is merely a preferred embodiment of the invention and is not intended to limit the invention, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (10)
1. The high-speed laser is characterized by comprising a substrate and an active layer positioned above the substrate, wherein the active layer comprises a lower limiting layer, a quantum well layer and an upper limiting layer; the two sides of the active layer are respectively a P-type InP layer and an N-type InP layer, and a transverse P-i-N junction is formed together; a P-type InGaAs layer is arranged above the P-type InGaAs layer, a P-type electrode layer is arranged above the P-type InGaAs layer, an N-type electrode layer is arranged above the N-type InP layer, and current is transversely injected;
and a grating layer is arranged above the active layer, and the surface grating period is designed to be that the lasing wavelength and the gain spectrum peak wavelength have negative detuning, and the detuning quantity is 10-20nm.
2. The high speed laser of claim 1, wherein intrinsic InP layers are on both sides of the lateral p-i-n junction, and oxide layers are over the grating layers and the intrinsic InP layers on both sides.
3. The high-speed laser of claim 2, wherein the oxide layer is SiO 2 A layer.
4. The high-speed laser of claim 1, wherein the substrate is a semi-insulating InP substrate and the quantum well layers are AlGaInAs multiple quantum well layers.
5. The high-speed laser of claim 1, wherein the surface grating is an InP-based grating or a silicon-based grating.
6. The manufacturing method of the high-speed laser is characterized by comprising the following steps of:
epitaxially growing an undoped active layer on a selected region of the substrate, wherein the active layer comprises a lower limiting layer, a quantum well layer and an upper limiting layer;
the undoped InP layer is epitaxially grown on two sides and above the active layer, and P-InP and N-InP areas are formed on two sides of the active region through Zn thermal diffusion and Si ion implantation respectively, so that a transverse P-i-N junction is formed;
growing a heavily doped P-InGaAs layer in a selected region above the P-InP;
manufacturing a surface grating on an InP layer above an active layer, wherein the period of the surface grating is designed to be that the lasing wavelength and the peak wavelength of a gain spectrum have negative detuning, and the detuning quantity is 10-20nm;
and respectively evaporating a P-type electrode and an N-type electrode above the P-InGaAs layer and the N-InP layer.
7. The high-speed laser according to claim 6, wherein the doping concentration of Zn thermal diffusion and Si ion implantation is 5e17-1e18cm -3 The doping concentration of P-InGaAs is 2e19cm -3 。
8. According to claimThe high-speed laser as described in claim 6, wherein after forming a surface grating on the InP layer above the active layer by electron beam exposure EBL, a layer of SiO is deposited by PECVD 2 As a passivation film.
9. The manufacturing method of the high-speed laser is characterized by comprising the following steps of:
epitaxially growing an undoped active layer on a selected region of the substrate, wherein the active layer comprises a lower limiting layer, a quantum well layer and an upper limiting layer;
growing N-InP on two sides of the active region by secondary epitaxy;
removing N-InP on one side of the active region through a photoetching process, and growing P-InP on the one side of the active region in a third epitaxy mode to form a transverse P-i-N junction;
growing a heavily doped P-InGaAs layer in a selected region above the P-InP;
manufacturing a surface grating above the active layer, wherein the period of the surface grating is designed to be that the lasing wavelength and the peak wavelength of the gain spectrum have negative detuning, and the detuning quantity is 10-20nm;
and respectively manufacturing a P-type electrode and an N-type electrode above the P-InGaAs layer and the N-InP layer.
10. The high speed laser of claim 9, wherein ALD is used to deposit a layer of SiO on the grating 2 As a passivation film.
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