CN116313516A - High-breakdown-voltage ceramic capacitor and preparation method thereof - Google Patents
High-breakdown-voltage ceramic capacitor and preparation method thereof Download PDFInfo
- Publication number
- CN116313516A CN116313516A CN202310431183.1A CN202310431183A CN116313516A CN 116313516 A CN116313516 A CN 116313516A CN 202310431183 A CN202310431183 A CN 202310431183A CN 116313516 A CN116313516 A CN 116313516A
- Authority
- CN
- China
- Prior art keywords
- batio
- ceramic capacitor
- substrate
- film layer
- electrode layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 239000010408 film Substances 0.000 claims abstract description 42
- 230000015556 catabolic process Effects 0.000 claims abstract description 26
- 239000003989 dielectric material Substances 0.000 claims abstract description 23
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 22
- 229910002367 SrTiO Inorganic materials 0.000 claims abstract description 13
- 239000010409 thin film Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 10
- 238000005477 sputtering target Methods 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 19
- 230000001105 regulatory effect Effects 0.000 claims description 18
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000012298 atmosphere Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 239000013077 target material Substances 0.000 claims description 6
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 24
- 229910052786 argon Inorganic materials 0.000 abstract description 12
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000137 annealing Methods 0.000 abstract description 2
- 239000012300 argon atmosphere Substances 0.000 abstract description 2
- 238000001000 micrograph Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Abstract
The application discloses a high breakdown voltage ceramic capacitor and preparation method thereof, wherein the high breakdown voltage ceramic capacitor includes: srTiO 3 Dielectric material layer, baTiO 3 A thin film layer, a first electrode layer, and a second electrode layer; the SrTiO 3 The second electrode layer is covered on the lower part of the dielectric material layer; the SrTiO 3 The upper part of the dielectric material layer is covered with the BaTiO 3 A thin film layer; the BaTiO 3 The upper part of the film layer is covered with the first electrode layer. The application adds BaTiO to the ceramic capacitor 3 The film layer structure improves the pressure resistance of the material and reduces the dielectric loss of the material; magnetron sputtering BaTiO 3 The film layer is deposited on the strontium titanate substrate rapidly, and then cooled under the protection of argon for 2-3 hours, and the argon atmosphere during annealing can reduce the vacancy density of the film and the electron doping concentration, thereby preparing uniform BaTiO 3 A thin film layer.
Description
Technical Field
The application belongs to the technical field of manufacturing of ceramic capacitors in electronic elements, and particularly relates to a high-breakdown-voltage ceramic capacitor and a preparation method thereof.
Background
Along with the progress of technology, the development of electronic components tends to be miniaturized and integrated, and particularly, ceramic capacitors are used as important components of electronic components, and are widely applied to electronic products due to the advantages of small volume, low dielectric loss and the like. The ceramic capacitor has good application prospect, and the application field determines that the dielectric material has the characteristics of high dielectric constant, high insulation resistivity, low dielectric loss and the like. The withstand voltage of the conventional ceramic capacitor is generally between 25V and 50V, and a novel ceramic capacitor structure and a preparation method thereof are required to be provided for improving the withstand voltage value of the conventional ceramic capacitor.
BaTiO 3 The ferroelectric material is very representative as a ferroelectric material which is relatively sufficient at the earliest of researches. BaTiO 3 The crystal is transparent when being prepared, and has the obvious properties of large dielectric constant, small dielectric loss, strong nonlinearity and obvious temperature and frequency dependence; meanwhile, the ceramic material has good ferroelectric, piezoelectric, pressure-resistant and insulating properties, and is an important lead-free environment-friendly functional ceramic material. The invention adds BaTiO on the dielectric material layer by a magnetron sputtering method 3 The film layer is used for improving the pressure resistance of the ceramic capacitor. The method for preparing the film has the advantages of being capable of preparing the epitaxial film, high in uniformity and density of the film, capable of realizing in-situ preparation of the film and easy to be compatible with an integrated circuit process. By adding BaTiO 3 The film layer can improve the withstand voltage of the ceramic capacitor and reduce the dielectric loss of materials, so that the ceramic capacitor can be widely applied to electronic components with high breakdown voltage performance requirements.
Disclosure of Invention
The application aims to solve the defects of the prior art, and provides a high-breakdown-voltage ceramic capacitor and a preparation method thereof, so that the ceramic capacitor can be widely applied to the field of electronic components with high-breakdown-voltage performance requirements.
To achieve the above object, the present application provides the following solutions:
a high breakdown voltage ceramic capacitor comprising: srTiO 3 Dielectric material layer, baTiO 3 A thin film layer, a first electrode layer, and a second electrode layer;
the SrTiO 3 The second electrode layer is covered on the lower part of the dielectric material layer;
the SrTiO 3 The upper part of the dielectric material layer is covered with the BaTiO 3 A thin film layer;
the BaTiO 3 The upper part of the film layer is covered with the first electrode layer.
Preferably, the BaTiO 3 The thickness of the film layer is 1 μm to 200 μm.
Preferably, the materials of the first electrode layer and the second electrode layer are metal materials.
The application also provides a preparation method of the high-breakdown-voltage ceramic capacitor, which is used for preparing the high-breakdown-voltage ceramic capacitor and comprises the following steps of:
with the SrTiO 3 The dielectric material layer is used as a substrate, and the substrate is cleaned;
drying the cleaned substrate, and placing the dried substrate on a magnetron sputtering equipment substrate;
by BaTiO 3 As a sputtering target, installing the sputtering target in a vacuum chamber of the magnetron sputtering equipment, adjusting the distance between the substrate and the sputtering target, closing the vacuum chamber, vacuumizing, heating the substrate to a preset temperature, and adjusting the vacuum chamber to a deposition atmosphere;
adjusting the air pressure of the vacuum chamber to the starting air pressure under the deposition atmosphere, and adjusting the voltage of the magnetron sputtering equipment to the starting voltage to enable the sputtering target to generate glow;
when the glow is stable, regulating the air pressure of the vacuum chamber to the working air pressure, regulating the voltage of the magnetron sputtering equipment to the working voltage, and sputtering the sputtering target material onto the substrate to obtain the BaTiO 3 A thin film layer;
covering the first electrode layer to the BaTiO 3 And covering the second electrode layer to the lower part of the SrTiO3 dielectric material layer on the upper part of the film layer to obtain the high-breakdown-voltage ceramic capacitor.
Preferably, the process of cleaning the substrate includes: and sequentially carrying out ultrasonic cleaning on the substrate in acetone, ethanol and deionized water.
Preferably, the vacuum degree of the vacuum state is less than 3×10 -4 Pa。
Preferably, the preset temperature ranges from 350 ℃ to 700 ℃.
Preferably, the deposition atmosphere comprises:
introducing inert gas into the vacuum chamber;
the gas flow of the vacuum chamber reaches a preset flow by adjusting a flowmeter;
the preset flow rate ranges from 30Sccm to 50Sccm.
Preferably, the working air pressure is in the range of 0.1Pa-2Pa, and the working voltage is in the range of 400V-800V.
Preferably, the duration of the sputtering is 60 minutes to 200 minutes.
Compared with the prior art, the beneficial effects of this application are:
(1) The application adds BaTiO to the ceramic capacitor 3 The film layer structure improves the pressure resistance of the material and reduces the dielectric loss of the material; magnetron sputtering BaTiO 3 The film layer is deposited on the strontium titanate substrate rapidly, and then cooled under the protection of argon for 2-3 hours, and the argon atmosphere during annealing can reduce the vacancy density of the film and the electron doping concentration, thereby preparing uniform BaTiO 3 A thin film layer;
(2) The highest vacuum requirement of the application is only 10 -4 In the order of Pa, the whole preparation process is only for a few hours. The required equipment is common magnetron sputtering equipment, has high preparation efficiency, low preparation cost and good repeatability, and is suitable for industrial production.
Drawings
For a clearer description of the technical solutions of the present application, the drawings that are required to be used in the embodiments are briefly described below, it being evident that the drawings in the following description are only some embodiments of the present application, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a high breakdown voltage ceramic capacitor according to an embodiment of the present application;
FIG. 2 is a schematic view of the present applicationBaTiO of example two 3 A scanning electron microscope image of the film layer, wherein a is a scanning electron microscope image under 1000 times, and b is a scanning electron microscope image under 5000 times;
FIG. 3 is a diagram of BaTiO according to example II 3 A voltage test result diagram of the film layer;
FIG. 4 shows BaTiO according to example III of the present application 3 A scanning electron microscope image of the film layer, wherein a is a scanning electron microscope image under 1000 times, and b is a scanning electron microscope image under 5000 times;
FIG. 5 shows BaTiO according to example IV of the present application 3 A scanning electron microscope image of the film layer, wherein a is a scanning electron microscope image under 300 times, and b is a scanning electron microscope image under 5000 times;
FIG. 6 is a diagram of BaTiO according to example IV of the present application 3 The voltage test results of the thin film layer are shown schematically.
Reference numerals illustrate:
1、SrTiO 3 a dielectric material layer; 2. BaTiO 3 A thin film layer; 3. a first electrode layer; 4. and a second electrode layer.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
In order that the above-recited objects, features and advantages of the present application will become more readily apparent, a more particular description of the invention briefly described above will be rendered by reference to specific embodiments that are illustrated in the appended drawings.
Example 1
In the first embodiment, as shown in fig. 1, a high breakdown voltage ceramic capacitor includes: srTiO 3 Dielectric material layer 1, baTiO 3 A thin film layer 2, a first electrode layer 3 and a second electrode layer 4.SrTiO 3 The lower part of the dielectric material layer 1 is covered with a second electrode layer 4; srTiO 3 The upper part of the dielectric material layer 1 is covered with BaTiO 3 A film layer 2; baTiO 3 The upper part of the film layer 2 is covered with a first electrode layer 3. In the present embodiment, baTiO 3 The thickness of the film layer 2 is 1 μm to 200 μm. The materials of the first electrode layer 3 and the second electrode layer 4 are selected from metal materials, and the metal materials comprise one of gold, silver, copper and tin.
Example two
In a second embodiment, a method for manufacturing a high breakdown voltage ceramic capacitor includes the steps of:
s1, srTiO 3 The dielectric material layer 1 serves as a substrate, and the substrate is cleaned.
The process of cleaning the substrate includes: and sequentially carrying out ultrasonic cleaning on the substrate in acetone, ethanol and deionized water.
In this example, a substrate of 10mm by 1mm was subjected to ultrasonic cleaning in acetone, ethanol, deionized water for 15 minutes in this order
S2, drying the cleaned substrate, and placing the dried substrate on a substrate of a magnetron sputtering device.
In this example, a substrate was dried and placed on a substrate of a magnetron sputtering apparatus, and BaTiO having a purity of 99.99% was mounted on a sputtering target of a vacuum chamber of the magnetron sputtering apparatus 3 And (3) a target material.
S3, using BaTiO 3 And (3) as a sputtering target, installing the sputtering target in a vacuum chamber of the magnetron sputtering equipment, adjusting the distance between the substrate and the sputtering target, closing the vacuum chamber, vacuumizing, heating the substrate to a preset temperature, and adjusting the vacuum chamber to a deposition atmosphere.
Wherein the vacuum degree in the vacuum state is less than 3×10 -4 Pa; the preset temperature ranges from 350 ℃ to 700 ℃; the deposition atmosphere comprises: introducing inert gas into the vacuum chamber; the gas flow of the vacuum chamber reaches the preset flow by adjusting the flowmeter; the preset flow rate ranges from 30Sccm to 50Sccm. In this embodiment, argon is used as the inert gas.
In this example, the sputter target to substrate distance was adjusted to 7 cm and the vacuum chamber was closed; after closing the vacuum chamber, vacuumizing to a vacuum degree of 2.5X10 -4 Pa；Heating the substrate to 600 ℃ in a gradient way by gradually increasing the power of the heating module, waiting for 10 minutes, and stabilizing the temperature of the substrate when the temperature of the thermometer is not changed; and (3) opening an argon bottle valve and a flowmeter power supply, introducing pure argon into the vacuum chamber, and adjusting the flowmeter to enable the gas flow to reach 40Sccm.
S4, adjusting the air pressure of the vacuum chamber to the starting air pressure under the deposition atmosphere, and adjusting the voltage of the magnetron sputtering equipment to the starting voltage to enable the sputtering target to generate glow.
In the embodiment, the gate valve is regulated to make the air pressure of the vacuum chamber reach the starting air pressure, the sputtering power supply is turned on, the sputtering power supply is preheated for 5 minutes, and the voltage is slowly regulated to the starting voltage to start the glow
S5, after the glow is stable, regulating the air pressure of the vacuum chamber to the working air pressure, regulating the voltage of the magnetron sputtering equipment to the working voltage, and sputtering the sputtering target material on the substrate to obtain BaTiO 3 Film layer 2.
Wherein, the working air pressure ranges from 0.1Pa to 2Pa, and the working voltage ranges from 400V to 800V; the sputtering time is 60 minutes to 200 minutes.
In the embodiment, after the glow is stable, the gate valve is regulated to enable the air pressure of the vacuum chamber to reach 2Pa of working air pressure, and the power supply is regulated to 550V of working voltage; pre-sputtering on the baffle for 10 min to prevent impurity pollution on the surface of the target, removing the baffle to make the baffle sputter on the substrate, and turning off the power supply after the sputtering time is set to be 60 min, and stopping starting. Waiting for the substrate to cool in pure argon environment to obtain BaTiO 3 Film layer 2, as shown in fig. 2.
S6, covering the first electrode layer 3 to BaTiO 3 A second electrode layer 4 is covered on the SrTiO film layer 2 3 And the lower part of the dielectric material layer 1 is provided with the high breakdown voltage ceramic capacitor.
BaTiO prepared in this example 3 The uniformity of the film layer 2 is good, and the gaps on the surface of the film are less; as shown in FIG. 3, the sample breakdown voltage of the uncoated substrate was 511.25V, the sample breakdown voltage of the coated substrate was 632.50V after 60 minutes of coating, and the comparison was made by coating the substrate surface with BaTiO 3 The breakdown voltage of the film layer 2 is improved by 23.72%.
Example III
In the third example, a strontium titanate substrate having a specification of 10mm×10mm×1mm was sequentially subjected to ultrasonic cleaning in acetone, ethanol, and deionized water for 15 minutes.
Drying the substrate, placing on the substrate of the magnetron sputtering equipment, and mounting BaTiO with purity of 99.99% on the sputtering target of the vacuum chamber of the magnetron sputtering equipment 3 Target material, adjusting the distance between the sputtering target and the substrate to 7 cm, and closing the vacuum chamber; after closing the vacuum chamber, vacuumizing to a vacuum degree of 2.5X10 -4 Pa; heating the substrate to 600 ℃ in a gradient way by gradually increasing the power of the heating module, waiting for 10 minutes, and stabilizing the temperature of the substrate when the temperature of the thermometer is not changed; and (3) opening an argon bottle valve and a flowmeter power supply, introducing pure argon into the vacuum chamber, and adjusting the flowmeter to enable the gas flow to reach 40Sccm.
The gate valve is regulated to make the air pressure of the vacuum chamber reach the starting air pressure, the sputtering power supply is turned on, the sputtering power supply is preheated for 5 minutes, and the voltage is slowly regulated to the starting voltage for starting.
After the glow is stable, regulating a gate valve to enable the air pressure of a vacuum chamber to reach 2Pa of working air pressure, and regulating a power supply to 550V of working voltage; pre-sputtering on the baffle for 10 min to prevent impurity pollution on the surface of the target, removing the baffle to make the baffle sputter on the substrate, and turning off the power supply after the sputtering time is set to 90 min to stop starting. Waiting for the substrate to cool in pure argon environment to obtain BaTiO 3 Film layer 2.
Covering the first electrode layer 3 to BaTiO 3 A second electrode layer 4 is covered on the SrTiO film layer 2 3 And the lower part of the dielectric material layer 1 is provided with the high breakdown voltage ceramic capacitor.
As shown in FIG. 4, the coating time of this example was 90 minutes, and BaTiO was prepared 3 The uniformity of the film layer 2 is better, and the film surface gap is less than 60 minutes compared with the sputtering time.
Example IV
In this example, a substrate having a specification of 10mm×10mm×1mm was subjected to ultrasonic cleaning in acetone, ethanol, deionized water for 15 minutes in order.
Drying the substrate, placing on the substrate of the magnetron sputtering equipment, and mounting BaTiO with purity of 99.99% on the sputtering target of the vacuum chamber of the magnetron sputtering equipment 3 And (3) target material, wherein the distance between the sputtering target and the substrate is adjusted to 7 cm, and the vacuum chamber is closed.
After closing the vacuum chamber, vacuumizing to a vacuum degree of 2.5X10 -4 Pa; heating the substrate to 600 ℃ in a gradient way by gradually increasing the power of the heating module, waiting for 10 minutes, and stabilizing the temperature of the substrate when the temperature of the thermometer is not changed; and (3) opening an argon bottle valve and a flowmeter power supply, introducing pure argon into the vacuum chamber, and adjusting the flowmeter to enable the gas flow to reach 40Sccm.
The gate valve is regulated to make the air pressure of the vacuum chamber reach the starting air pressure, the sputtering power supply is turned on, the sputtering power supply is preheated for 5 minutes, and the voltage is slowly regulated to the starting voltage for starting.
After the glow is stable, regulating a gate valve to enable the air pressure of a vacuum chamber to reach 2Pa of working air pressure, and regulating a power supply to 550V of working voltage; pre-sputtering on the baffle for 10 min to prevent impurity pollution on the surface of the target, removing the baffle to make the baffle sputter on the substrate, and turning off the power supply after the sputtering time is set to be 120 min, and stopping starting. Waiting for the substrate to cool in pure argon environment to obtain BaTiO 3 Film layer 2, as shown in fig. 5.
Covering the first electrode layer 3 to BaTiO 3 A second electrode layer 4 is covered on the SrTiO film layer 2 3 And the lower part of the dielectric material layer 1 is provided with the high breakdown voltage ceramic capacitor.
As shown in FIG. 6, baTiO prepared in this example 3 The uniformity of the film layer 2 is good, the gaps on the surface of the film are less, and the uniformity and the gaps are improved along with the increase of the film coating time; the breakdown voltage of the uncoated substrate sample is 511.25V, the breakdown voltage of the uncoated substrate sample is 627.50V after 120 minutes of coating, and compared with the uncoated substrate sample, the film is coated with the BaTiO3 film layer 2 on the surface of the substrate, so that the breakdown voltage of the uncoated substrate sample is improved by 22.74%.
The foregoing embodiments are merely illustrative of the preferred embodiments of the present application and are not intended to limit the scope of the present application, and various modifications and improvements made by those skilled in the art to the technical solutions of the present application should fall within the protection scope defined by the claims of the present application.
Claims (10)
1. A high breakdown voltage ceramic capacitor, comprising: srTiO 3 Dielectric material layer, baTiO 3 A thin film layer, a first electrode layer, and a second electrode layer;
the SrTiO 3 The second electrode layer is covered on the lower part of the dielectric material layer;
the SrTiO 3 The upper part of the dielectric material layer is covered with the BaTiO 3 A thin film layer;
the BaTiO 3 The upper part of the film layer is covered with the first electrode layer.
2. The high breakdown voltage ceramic capacitor of claim 1, wherein the BaTiO 3 The thickness of the film layer is 1 μm to 200 μm.
3. The high breakdown voltage ceramic capacitor of claim 1, wherein the materials of the first electrode layer and the second electrode layer are metallic materials.
4. A method for manufacturing a high breakdown voltage ceramic capacitor according to any one of claims 1 to 3, comprising the steps of:
with the SrTiO 3 The dielectric material layer is used as a substrate, and the substrate is cleaned;
drying the cleaned substrate, and placing the dried substrate on a magnetron sputtering equipment substrate;
by BaTiO 3 As a sputtering target, installing the sputtering target in a vacuum chamber of the magnetron sputtering equipment, adjusting the distance between the substrate and the sputtering target, closing the vacuum chamber, vacuumizing, heating the substrate to a preset temperature, and adjusting the vacuum chamber to a deposition atmosphere;
adjusting the air pressure of the vacuum chamber to the starting air pressure under the deposition atmosphere, and adjusting the voltage of the magnetron sputtering equipment to the starting voltage to enable the sputtering target to generate glow;
when the glow is stable, regulating the air pressure of the vacuum chamber to the working air pressure, regulating the voltage of the magnetron sputtering equipment to the working voltage, and sputtering the sputtering target material onto the substrate to obtain the BaTiO 3 A thin film layer;
covering the first electrode layer to the BaTiO 3 And covering the second electrode layer to the lower part of the SrTiO3 dielectric material layer on the upper part of the film layer to obtain the high-breakdown-voltage ceramic capacitor.
5. The method of manufacturing a high breakdown voltage ceramic capacitor of claim 4, wherein the process of cleaning the substrate comprises: and sequentially carrying out ultrasonic cleaning on the substrate in acetone, ethanol and deionized water.
6. The method for manufacturing a ceramic capacitor with high breakdown voltage according to claim 4, wherein the vacuum degree in the vacuum state is less than 3X 10 -4 Pa。
7. The method of manufacturing a high breakdown voltage ceramic capacitor according to claim 4, wherein the preset temperature is in a range of 350 ℃ to 700 ℃.
8. The method of manufacturing a high breakdown voltage ceramic capacitor of claim 4, wherein the deposition atmosphere comprises:
introducing inert gas into the vacuum chamber;
the gas flow of the vacuum chamber reaches a preset flow by adjusting a flowmeter;
the preset flow rate ranges from 30Sccm to 50Sccm.
9. The method of manufacturing a ceramic capacitor with high breakdown voltage according to claim 4, wherein the operating gas pressure is in the range of 0.1Pa to 2Pa, and the operating voltage is in the range of 400V to 800V.
10. The method of manufacturing a high breakdown voltage ceramic capacitor according to claim 4, wherein the sputtering time period is 60 minutes to 200 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310431183.1A CN116313516B (en) | 2023-04-21 | 2023-04-21 | High-breakdown-voltage ceramic capacitor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310431183.1A CN116313516B (en) | 2023-04-21 | 2023-04-21 | High-breakdown-voltage ceramic capacitor and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116313516A true CN116313516A (en) | 2023-06-23 |
| CN116313516B CN116313516B (en) | 2024-01-26 |
Family
ID=86781623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310431183.1A Active CN116313516B (en) | 2023-04-21 | 2023-04-21 | High-breakdown-voltage ceramic capacitor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116313516B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1197289A (en) * | 1997-09-18 | 1999-04-09 | Fujitsu Ltd | Thin-film chip capacitor and its manufacture |
| CN102693837A (en) * | 2011-03-23 | 2012-09-26 | 中国科学院微电子研究所 | Capacitor with periodic laminated ferroelectric thin film and preparation method thereof |
| CN103219153A (en) * | 2013-03-26 | 2013-07-24 | 欧阳俊 | High-voltage-resistant and high-energy-density capacitor and preparation method thereof |
| WO2023273211A1 (en) * | 2021-06-30 | 2023-01-05 | 中国科学院深圳先进技术研究院 | Layered composite relaxor ferroelectric material capable of increasing both energy storage density and energy storage efficiency, and preparation method therefor |
-
2023
- 2023-04-21 CN CN202310431183.1A patent/CN116313516B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1197289A (en) * | 1997-09-18 | 1999-04-09 | Fujitsu Ltd | Thin-film chip capacitor and its manufacture |
| CN102693837A (en) * | 2011-03-23 | 2012-09-26 | 中国科学院微电子研究所 | Capacitor with periodic laminated ferroelectric thin film and preparation method thereof |
| CN103219153A (en) * | 2013-03-26 | 2013-07-24 | 欧阳俊 | High-voltage-resistant and high-energy-density capacitor and preparation method thereof |
| WO2023273211A1 (en) * | 2021-06-30 | 2023-01-05 | 中国科学院深圳先进技术研究院 | Layered composite relaxor ferroelectric material capable of increasing both energy storage density and energy storage efficiency, and preparation method therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116313516B (en) | 2024-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU2020101866A4 (en) | A method for preparing ferroelectric thin film by magnetron sputtering and ferroelectric thin film | |
| CN101956166A (en) | Method for preparing plumbum magnesium niobate-plumbum titanate ferroelectric film | |
| CN108441831A (en) | A kind of preparation method of doped yttrium hafnium oxide ferroelectric thin film | |
| CN109545548B (en) | Rare earth element modified wide-temperature thin film energy storage capacitor and preparation method thereof | |
| CN113025959A (en) | Method for preparing hafnium oxide-based ferroelectric film at low temperature by ion beam assisted magnetron sputtering deposition | |
| US10026551B2 (en) | Magnetic capacitor structures | |
| CN1790569A (en) | Dielectric thin film, dielectric thin film device, and method of production thereof | |
| CN110349750B (en) | Method for improving working voltage of dielectric thin film device under strong electric field | |
| CN106601903A (en) | C axis height-oriented barium titanate film and in-situ preparation method of the same at medium and low temperature | |
| Nam et al. | The effect of heat treatment on the SrTiO3 thin films prepared by radio frequency magnetron sputtering | |
| CN116313516B (en) | High-breakdown-voltage ceramic capacitor and preparation method thereof | |
| CN111525024B (en) | Bismuth ferrite film material, method for integrally preparing bismuth ferrite film on silicon substrate at low temperature and application | |
| Chung et al. | The effect of post-annealing on the electrical properties of (Pb, Sr) TiO3 thin films prepared by liquid source misted chemical deposition for ultra large-scale integration (ULSI) dynamic random access memory (DRAM) capacitor | |
| Laha et al. | Role of La0. 5Sr0. 5CoO3 template layers on dielectric and electrical properties of pulsed-laser ablated Pb (Nb2/3Mg1/3) O3–PbTiO3 thin films | |
| CN1932080A (en) | Prepn process of boron strontium titanate film material | |
| TWI671442B (en) | Oxide dielectric body and method of manufacturing same, and solid state electronic device and method of manufacturing same | |
| CN111321383A (en) | Barium titanate film material with specific amorphous structure and preparation method thereof | |
| CN113005406B (en) | Preparation method of niobium-tin film | |
| KR102276021B1 (en) | Method of manufacturing a strontium titanate based dielectric layer having high dielectric constant and low leakage current density and method of manufacturing a capacitor including the strontium titanate based dielectric layer | |
| RU2671614C1 (en) | METHOD FOR OBTAINING FERROELECTRIC FILMS Ba1-XSrXTiO3 | |
| JP5375582B2 (en) | Thin film capacitor manufacturing method | |
| CN107287563A (en) | A kind of extension stronitum stannate cobalt thin film and preparation method thereof | |
| CN116313525A (en) | Preparation method of metal ferroelectric semiconductor adjustable capacitor with high capacitance adjustability | |
| TWI541847B (en) | Magnetic capacitor structures | |
| Huang et al. | Characterization of the Ba (SnxTi1− x) O3 thin films prepared by radio frequency magnetron sputtering |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |