CN116299090A - Giant magneto-impedance magnetic sensor with surface pattern magnetic film and preparation method thereof - Google Patents
Giant magneto-impedance magnetic sensor with surface pattern magnetic film and preparation method thereof Download PDFInfo
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- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract
The invention provides a giant magneto-impedance magnetic sensor with a surface pattern magnetic film, which comprises an insulating substrate, two electrodes and the surface pattern magnetic film; the surface pattern magnetic thin film includes a surface smooth magnetic thin film and a plurality of gate pattern magnetic thin films; the smooth-surface magnetic film is arranged on the top of the substrate; a plurality of gate pattern magnetic thin films are arranged at equal intervals on top of the surface smooth magnetic thin films; the smooth surface magnetic film and the single grid pattern magnetic film are rectangular; the long side of the grid pattern magnetic film is perpendicular to the long side of the smooth surface magnetic film; the two electrodes are symmetrically connected to the two broad sides of the smooth surface magnetic film. The invention not only weakens the demagnetizing effect of the surface pattern magnetic film in the width direction, but also utilizes the shape anisotropy of the upper layer grid pattern magnetic film, and can obviously strengthen the giant magneto-impedance effect of the surface pattern magnetic film and realize the high-sensitivity magnetic field detection.
Description
Technical Field
The invention relates to the technical field of magnetic sensors, in particular to a surface pattern magnetic film giant magneto-impedance magnetic sensor and a preparation method thereof.
Background
The magnetic sensor is a sensor that senses a physical quantity related to a magnetic signal using a magnetically sensitive element and converts it into an electrical signal. Is widely applied to the fields of target detection, flow monitoring, navigation positioning, biomedicine and the like. The rapid development of atmospheric science, environmental monitoring, resource exploitation, underwater navigation and disease diagnosis is promoted.
In the intelligent sensing era, the requirements of emerging industries such as artificial intelligence, new energy automobiles, robots, intelligent health detection and the like on high-sensitivity magnetic field sensors are increasing.
At present, the sensitivity of the Hall sensor is low; the fluxgate sensor has a complex structure and high power consumption; the superconducting quantum interference effect magnetic sensor has large volume, complex operation and high cost. In contrast, the giant magneto-impedance magnetic sensor has remarkable advantages in preparing the magnetic sensor with high sensitivity due to high sensitivity, simple structure and low cost.
Giant magneto-impedance (GMI) effect refers to the fact that the impedance of a soft magnetic material changes significantly with an externally applied magnetic field when an ac excitation is applied. The physical mechanism is that the magnetic permeability of the soft magnetic material is obviously changed along with an externally applied magnetic field, so that the high-sensitivity magnetic field measurement is realized.
Compared with an amorphous wire giant magneto-impedance magnetic sensor, the magnetic film giant magneto-impedance magnetic sensor with the planar structure has low excitation frequency and is compatible with micro-processing technology, and low-cost industrialized production is expected to be realized. The current method for improving the sensitivity of the magnetic sensor mainly comprises the following steps: 1. adjusting the composition of the film to enhance the magnetic properties of the film; 2. post-treating the magnetic film to induce a film-transverse induced anisotropy; 3. and optimizing the structural parameters of the sensor. However, once the magnetic material is formed into a planar film of a defined shape, the demagnetizing effect caused by the planar structure causes the transverse effective permeability of the magnetic film to be much smaller than the nominal permeability of the magnetic material, so that the improvement of the sensitivity of the sensor is greatly limited. In addition, the induced anisotropy induced by post-treatment (such as magnetic field annealing, current annealing, etc.) is difficult to realize precise control, and the effect of the anisotropic field on enhancing the giant magneto-impedance effect cannot be fully exerted.
Therefore, a method is needed that can simultaneously weaken the transverse demagnetizing effect and accurately regulate the anisotropic field to achieve high-sensitivity magnetic field measurement.
Disclosure of Invention
The invention aims to provide a surface pattern magnetic film giant magneto-impedance magnetic sensor and a preparation method thereof, so as to solve the technical problems.
In order to achieve the above object, the giant magneto-impedance magnetic sensor with a surface pattern magnetic film according to the present invention is characterized by comprising an insulating substrate, two electrodes and a surface pattern magnetic film;
the surface pattern magnetic thin film includes a surface smooth magnetic thin film and a plurality of gate pattern magnetic thin films; the smooth-surface magnetic film is arranged on the top of the substrate; a plurality of gate pattern magnetic thin films are arranged at equal intervals on top of the surface smooth magnetic thin films; the smooth surface magnetic film and the single grid pattern magnetic film are rectangular; the long side of the grid pattern magnetic film is perpendicular to the long side of the smooth surface magnetic film; the two electrodes are symmetrically connected to the two wide edges of the smooth-surface magnetic film; the aspect ratio of the single gate pattern magnetic thin film is not less than ten; the length of the gate pattern magnetic thin film is the same as the width of the surface smooth magnetic thin film.
Further, the substrate is a rigid material or a flexible material; the electrodes are magnetic materials or non-magnetic conductive materials.
Preferably, the substrate is a silicon substrate, and the electrode is a copper electrode.
The smooth surface magnetic film and the grid pattern magnetic film are both magnetic materials, and the materials of the magnetic materials can be the same or different.
When the electrode is made of magnetic material, the material can be the same as or different from the magnetic film with smooth surface or the magnetic film with grid pattern.
In addition, the electrodes are electrically connected with the surface pattern magnetic film, wherein one electrode is an electrode excitation signal input end, and the other electrode is an output end; the current direction of the electric excitation signal is parallel to the length direction of the surface smooth magnetic film.
The preparation method of the surface pattern magnetic film giant magneto-impedance magnetic sensor is provided below; the method comprises the following steps:
s1: preparing a smooth surface magnetic film and an electrode on a substrate respectively by a photoetching process or a laser processing technology, and preparing a grid pattern magnetic film on the smooth surface magnetic film; obtaining a semi-finished product of the magnetic sensor
S2: and (3) annealing by a high-temperature vacuum magnetic field, wherein the magnetic field direction is perpendicular to the length direction of the smooth magnetic film on the surface of the semi-finished magnetic sensor product so as to induce a transverse anisotropic field.
Specifically, the photolithography process of step S1 includes:
s11: preparing a smooth-surface magnetic film on a substrate through a first photoetching process, wherein the preparation comprises the steps of preprocessing the substrate, depositing a first protective layer on the substrate, spin-coating a first photoresist on the first protective layer, drying, exposing through a first photoetching plate with a smooth-surface magnetic film shape, etching after development to remove the first protective layer of the area where the smooth-surface magnetic film is positioned, and depositing a first magnetic layer on the substrate of the area where the smooth-surface magnetic film is positioned, wherein the first magnetic layer is the smooth-surface magnetic film;
s12: preparing electrodes on the substrates at two ends of the smooth-surface magnetic film through a second photoetching process; depositing a second protective layer on the smooth-surface magnetic film to enable the upper surfaces of the first protective layer and the second protective layer to be flush; stripping to remove the first photoresist; spin-coating a second photoresist on the first protective layer and the second protective layer, and drying; exposing through a second photoetching plate with an electrode shape, etching to remove a first protection layer of the area where the electrode is located after developing, and depositing a conductive layer on a substrate of the area where the electrode is located, wherein the conductive layer is the electrode;
s13: preparing a gate pattern magnetic film on the smooth surface magnetic film through a third photoetching process; depositing a third protective layer on the surface of the conductive layer to enable the upper surfaces of the first protective layer, the second protective layer and the third protective layer to be flush; stripping to remove the second photoresist; spin-coating a third photoresist on the first protective layer, the second protective layer and the third protective layer, and drying; exposing through a third photoetching plate with a plurality of grid pattern magnetic films, and etching to remove a second protective layer of the region where the grid pattern magnetic films are located after development; depositing a second magnetic layer on the first magnetic layer in the region where the gate pattern magnetic film is located; depositing a fourth protective layer over the second magnetic layer; and stripping and removing the third photoresist to obtain a semi-finished magnetic sensor.
Further, the substrate pretreatment comprises ultrasonic cleaning and decontamination sequentially through acetone, absolute ethyl alcohol and deionized water, drying through nitrogen and drying in an oven.
Further, the first protective layer, the second protective layer and the third protective layer are all silicon nitride.
Further, the first photoresist, the second photoresist and the third photoresist are stripped and removed by acetone.
Further, the first magnetic layer, the second magnetic layer and the conductive layer are all formed by adopting a chemical deposition or physical deposition method.
Specifically, the laser processing technology in the step S1 includes: pasting a soft magnetic film on an insulating substrate, cutting an electrode and a smooth-surface magnetic film on the soft magnetic film by using laser, and then etching a space between adjacent grid pattern magnetic films on the top surface of the smooth-surface magnetic film by using laser; obtaining a semi-finished product of the magnetic sensor.
Further, the step S2 is based on an annealing device comprising a tray; two fixing sheets are symmetrically fixed on the tray through screws; the fixing piece is provided with a high-temperature magnet; fixing the semi-finished product of the magnetic sensor obtained in the step S1 on a tray between two high-temperature magnets by using a high-temperature adhesive tape; the length direction of the smooth magnetic film on the surface of the magnetic sensor semi-finished product is perpendicular to the length direction of the high-temperature magnet; and (3) integrally placing the annealing device and the semi-finished product of the magnetic sensor into a high-temperature annealing furnace, carrying out vacuum annealing, and cooling to room temperature in a vacuum environment.
Compared with the prior art, the invention has the following beneficial effects:
the invention adopts the surface pattern magnetic film as the magnetic sensitive element. Since the aspect ratio of the gate pattern magnetic thin film is not less than 10, shape demagnetizing effect along the length direction of the gate pattern magnetic thin film is significantly reduced. In addition, the anisotropy field of the surface pattern magnetic thin film is mainly controlled by the shape anisotropy of the gate pattern magnetic thin film. The shape of the grid pattern magnetic film can be precisely controlled by the prior processing technology, and the anisotropic field of the surface pattern magnetic film can be precisely regulated and controlled.
The invention not only weakens the demagnetizing effect of the surface pattern magnetic film in the width direction, but also utilizes the shape anisotropy of the upper layer grid pattern magnetic film, and can obviously strengthen the giant magneto-impedance effect of the surface pattern magnetic film and realize the high-sensitivity magnetic field detection.
Drawings
FIG. 1 is a schematic diagram of a surface pattern magnetic thin film giant magneto-impedance magnetic sensor according to the present invention.
FIG. 2 is a front view of a surface pattern magnetic film of the present invention.
Fig. 3 is a schematic structural diagram of a first semi-finished product processed and formed in step S12 in embodiment 2.
Fig. 4 is a schematic diagram of a semi-finished magnetic sensor manufactured in step S13 in example 2.
Fig. 5 shows an annealing apparatus in step S2 of example 2.
Fig. 6 is a schematic diagram of the semi-finished structure of a magnetic sensor manufactured by the laser processing technology of example 3.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. Unless otherwise defined, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and the like means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof without precluding other elements or items.
Aiming at the problems existing in the prior art, the embodiment of the invention provides a surface pattern magnetic film giant magneto-impedance magnetic sensor and a preparation method thereof.
Example 1
As shown in fig. 1-2, a giant magneto-impedance magnetic sensor with a surface pattern magnetic film is characterized by comprising an insulating substrate 1, two electrodes 2 and the surface pattern magnetic film 3;
the surface pattern magnetic thin film 3 includes a surface smooth magnetic thin film 3-1 and a plurality of gate pattern magnetic thin films 3-2; the smooth-surface magnetic film 3-1 is arranged on the top of the substrate 1; a plurality of gate pattern magnetic thin films 3-2 are arranged at equal intervals on top of the surface smooth magnetic thin film 3-1; the smooth surface magnetic film 3-1 and the single gate pattern magnetic film 3-2 are rectangular; the long side of the gate pattern magnetic film 3-2 is perpendicular to the long side of the surface smooth magnetic film 3-1; the two electrodes 2 are symmetrically connected to the two wide sides of the surface smooth magnetic film 3-1; the aspect ratio of the individual gate pattern magnetic thin film 3-2 is not less than ten; the length of the gate pattern magnetic thin film 3-2 is the same as the width of the surface smooth magnetic thin film 3-1.
The substrate 1 is a rigid material or a flexible material; the electrode 2 is a magnetic material or a non-magnetic conductive material.
The base 1 is a silicon substrate and the electrode 2 is a copper electrode.
The smooth surface magnetic film 3-1 and the gate pattern magnetic film 3-2 are both made of magnetic materials, and the materials of the magnetic materials may be the same or different.
The electrode 2 may be a magnetic material or a metal conductive material, and when the electrode 2 is a magnetic material, the material may be the same as or different from the smooth surface magnetic film 3-1 or the gate pattern magnetic film 3-2.
In addition, the electrode 2 is electrically connected with the surface pattern magnetic film 3-1, wherein one electrode 2 is an electric excitation signal input end, and the other electrode 2 is an output end; the current direction of the electric excitation signal is parallel to the length direction of the surface smooth magnetic film 3-1.
Example 2
A method for preparing a magnetic sensor with giant magneto-impedance of a magnetic film with a surface pattern comprises the following steps of
S11, preparing a magnetic film with a smooth surface:
selecting a silicon substrate as a base material, and sequentially ultrasonically cleaning the silicon substrate in acetone, absolute ethyl alcohol and deionized water for 5 min to remove dirt on the surface of the silicon substrate. The liquid on the surface of the silicon substrate was then dried using dry nitrogen, and the silicon substrate was baked in a vacuum oven 2 h.
A 1500 a nm a thick first protective layer, silicon nitride (Si 3N 4), was deposited on the silicon substrate.
The first photoresist was spin coated on the first protective layer with a spin coater at a rotation speed of 1500 r/min, and the thickness of the first photoresist was 6 μm, and then baked on an electric heating plate at 90 deg.c for 120 seconds.
A first lithographic plate having a rectangular pattern of 2 mm ×6 mm (conforming to the shape of a smooth magnetic film) was exposed using a lithographic machine and developed in a developer for 45 seconds followed by a rinse with deionized water for 35 seconds to give a rectangular pattern.
The first protective layer is etched 1500 a nm a using a reactive ion etching system in preparation for preparing the underlying smooth surface magnetic film.
The first magnetic layer of 600 nm is deposited by magnetron sputtering, and the first magnetic layer is a smooth-surface magnetic film.
S12: preparing a copper electrode:
depositing 900 nm a second protective layer over the first magnetic layer; the second protective layer is silicon nitride.
Stripping the first photoresist by using acetone and ultrasonically cleaning the first photoresist by using deionized water for 15 seconds;
spin-coating a second photoresist on the first protective layer and the second protective layer at a rotating speed of 1500 r/min by using a spin coater, wherein the thickness of the second photoresist is 6 mu m, and then baking the second photoresist on an electric heating plate at 90 ℃ for 120 seconds;
exposing the second photoetching plate with the electrode pattern by using a photoetching machine, developing for 45 seconds in a developing solution, and then flushing for 35 seconds by using deionized water to obtain the electrode pattern;
the first protective layer is etched 1500 a nm using a reactive ion etching system in preparation for preparing the electrode.
A copper layer of 600 nm is deposited by magnetron sputtering, which is a copper electrode. The first semi-finished structure formed by step S12 is shown in fig. 3.
S13: preparing a gate pattern magnetic thin film:
a third protective layer of 900 nm is deposited over the copper layer, the third protective layer being silicon nitride.
The second photoresist was stripped with acetone and ultrasonically cleaned with deionized water for 15 seconds.
Spin-coating a third photoresist on the first protective layer, the second protective layer and the third protective layer at a rotating speed of 1500 r/min by using a spin coater, wherein the thickness of the third photoresist is 6 mu m, and then baking the third photoresist on an electric heating plate at 90 ℃ for 120 seconds;
a third photolithographic plate having the shape of a plurality of gate pattern magnetic films was exposed to light using a photolithographic machine and developed in a developing solution for 45 seconds, followed by rinsing with deionized water for 35 seconds to obtain a pattern having the same shape of a gate pattern magnetic film, the width of a single gate being 10 μm.
The reactive ion etching system etches the second protective layer 900 nm.
And depositing 600 nm second magnetic layer by magnetron sputtering, wherein the second magnetic layer is the grid pattern magnetic film.
A fourth protective layer of 300 a nm a silicon nitride is deposited over the second magnetic layer.
The third photoresist was removed with acetone and ultrasonically cleaned with deionized water for 15 seconds to yield a magnetic sensor semi-finished product as shown in fig. 4.
S2: and (3) annealing by a high-temperature vacuum magnetic field, wherein the magnetic field direction is perpendicular to the length direction of the smooth magnetic film on the surface.
The high-temperature vacuum magnetic field annealing is based on an annealing device; as shown in fig. 5, the annealing device includes a tray 7; two fixing sheets 5 are symmetrically fixed on the tray 7 through screws 6; the fixing piece 5 is provided with a high-temperature magnet 4; fixing the semi-finished magnetic sensor obtained in the step S13 on a tray between two high-temperature magnets 4 by using a high-temperature adhesive tape; the length direction of the surface smooth magnetic film 3-1 is perpendicular to the length direction of the high-temperature magnet 4; and (3) integrally placing the annealing device and the magnetic sensor into a high-temperature annealing furnace, carrying out vacuum annealing, and cooling to room temperature in a vacuum environment.
Example 3
The method comprises the steps of manufacturing by adopting a laser processing technology, adhering a soft magnetic film on an insulating flexible substrate, cutting an electrode and a smooth-surface magnetic film on the soft magnetic film by utilizing laser, and etching a space between adjacent grid pattern magnetic films on the top surface of the smooth-surface magnetic film by utilizing the laser; obtaining a magnetic sensor semi-finished product (fig. 6);
the obtained magnetic sensor semi-finished product was subjected to high temperature vacuum magnetic field annealing treatment by the same step S2 as in example 2.
While embodiments of the present invention have been described in detail hereinabove, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. It is to be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the following claims. Moreover, the invention described herein is capable of other embodiments and of being practiced or of being carried out in various ways.
Claims (8)
1. The giant magneto-impedance magnetic sensor with the surface pattern magnetic film is characterized by comprising an insulating substrate, two electrodes and the surface pattern magnetic film;
the surface pattern magnetic thin film includes a surface smooth magnetic thin film and a plurality of gate pattern magnetic thin films; the smooth-surface magnetic film is arranged on the top of the substrate; a plurality of gate pattern magnetic thin films are arranged at equal intervals on top of the surface smooth magnetic thin films; the smooth surface magnetic film and the single grid pattern magnetic film are rectangular; the long side of the grid pattern magnetic film is perpendicular to the long side of the smooth surface magnetic film; the two electrodes are symmetrically connected to the two wide edges of the smooth-surface magnetic film; the aspect ratio of the single gate pattern magnetic thin film is not less than ten; the length of the gate pattern magnetic thin film is the same as the width of the surface smooth magnetic thin film.
2. A surface-patterned magnetic thin-film giant magneto-impedance magnetic sensor as claimed in claim 1, wherein the substrate is a rigid material or a flexible material; the electrodes are magnetic or non-magnetic conductive materials.
3. A surface-patterned magnetic thin-film giant magneto-impedance magnetic sensor as claimed in claim 2, wherein the substrate is a silicon substrate and the electrodes are copper electrodes.
4. A preparation method of a magnetic sensor with giant magneto-impedance of a magnetic film with a surface pattern comprises the steps of; the method is characterized by comprising the following steps of:
s1: preparing a smooth surface magnetic film and an electrode on a substrate respectively by a photoetching process or a laser processing technology, and preparing a grid pattern magnetic film on the smooth surface magnetic film; obtaining a semi-finished product of the magnetic sensor
S2: and (3) annealing by a high-temperature vacuum magnetic field, wherein the magnetic field direction is perpendicular to the length direction of the smooth magnetic film on the surface of the semi-finished magnetic sensor product so as to induce a transverse anisotropic field.
5. The method for preparing a surface-patterned magnetic thin-film giant magneto-impedance magnetic sensor according to claim 4; the photoetching process of the step S1 is characterized by comprising the following steps:
s11: preparing a smooth-surface magnetic film on a substrate through a first photoetching process, wherein the preparation comprises the steps of preprocessing the substrate, depositing a first protective layer on the substrate, spin-coating a first photoresist on the first protective layer, drying, exposing through a first photoetching plate with a smooth-surface magnetic film shape, etching after development to remove the first protective layer of the area where the smooth-surface magnetic film is positioned, and depositing a first magnetic layer on the substrate of the area where the smooth-surface magnetic film is positioned, wherein the first magnetic layer is the smooth-surface magnetic film;
s12: preparing electrodes on the substrates at two ends of the smooth-surface magnetic film through a second photoetching process; depositing a second protective layer on the smooth-surface magnetic film to enable the upper surfaces of the first protective layer and the second protective layer to be flush; stripping to remove the first photoresist; spin-coating a second photoresist on the first protective layer and the second protective layer, and drying; exposing through a second photoetching plate with an electrode shape, etching to remove a first protection layer of the area where the electrode is located after developing, and depositing a conductive layer on a substrate of the area where the electrode is located, wherein the conductive layer is the electrode;
s13: preparing a gate pattern magnetic film on the smooth surface magnetic film through a third photoetching process; depositing a third protective layer on the surface of the conductive layer to enable the upper surfaces of the first protective layer, the second protective layer and the third protective layer to be flush; stripping to remove the second photoresist; spin-coating a third photoresist on the first protective layer, the second protective layer and the third protective layer, and drying; exposing through a third photoetching plate with a plurality of grid pattern magnetic films, and etching to remove a second protective layer of the region where the grid pattern magnetic films are located after development; depositing a second magnetic layer on the first magnetic layer in the region where the gate pattern magnetic film is located; depositing a fourth protective layer over the second magnetic layer; and stripping and removing the third photoresist to obtain a semi-finished magnetic sensor.
6. The method for preparing a surface-patterned magnetic thin-film giant magneto-impedance magnetic sensor of claim 5; characterized in that it comprises at least one of the following technical features;
a1. the substrate pretreatment comprises ultrasonic cleaning and decontamination sequentially through acetone, absolute ethyl alcohol and deionized water, blow-drying through nitrogen and drying in an oven;
a2. the first protective layer, the second protective layer and the third protective layer are all silicon nitride;
a3. the first photoresist, the second photoresist and the third photoresist are stripped and removed by acetone;
a4. the first magnetic layer, the second magnetic layer and the conductive layer are all formed by adopting a chemical deposition or physical deposition method.
7. The method for preparing a surface-patterned magnetic thin-film giant magneto-impedance magnetic sensor according to claim 4; the laser processing technology of the step S1 is characterized by comprising the following steps: pasting a soft magnetic film on an insulating substrate, cutting an electrode and a smooth-surface magnetic film on the soft magnetic film by using laser, and then etching a space between adjacent grid pattern magnetic films on the top surface of the smooth-surface magnetic film by using laser; obtaining a semi-finished product of the magnetic sensor.
8. The method for preparing a surface-patterned magnetic thin-film giant magneto-impedance magnetic sensor according to claim 4; wherein the step S2 is based on an annealing device, and the annealing device comprises a tray; two fixing sheets are symmetrically fixed on the tray through screws; the fixing piece is provided with a high-temperature magnet; fixing the semi-finished product of the magnetic sensor obtained in the step S1 on a tray between two high-temperature magnets by using a high-temperature adhesive tape; the length direction of the smooth magnetic film on the surface of the magnetic sensor semi-finished product is perpendicular to the length direction of the high-temperature magnet; and (3) integrally placing the annealing device and the semi-finished product of the magnetic sensor into a high-temperature annealing furnace, carrying out vacuum annealing, and cooling to room temperature in a vacuum environment.
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| CN202310069794.6A Pending CN116299090A (en) | 2022-09-26 | 2023-02-07 | Giant magneto-impedance magnetic sensor with surface pattern magnetic film and preparation method thereof |
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