CN116266528A - Spray header assembly - Google Patents

Spray header assembly Download PDF

Info

Publication number
CN116266528A
CN116266528A CN202211605719.9A CN202211605719A CN116266528A CN 116266528 A CN116266528 A CN 116266528A CN 202211605719 A CN202211605719 A CN 202211605719A CN 116266528 A CN116266528 A CN 116266528A
Authority
CN
China
Prior art keywords
plate
main
flow path
showerhead assembly
cover
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211605719.9A
Other languages
Chinese (zh)
Inventor
张琼镐
姜民旭
金圭范
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TES Co Ltd
Original Assignee
TES Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TES Co Ltd filed Critical TES Co Ltd
Publication of CN116266528A publication Critical patent/CN116266528A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32522Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating
    • H01J2237/3321CVD [Chemical Vapor Deposition]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

The present invention relates to a showerhead assembly, and more particularly, to a showerhead assembly that prevents a first effect (first effect) generated when a temperature inside a chamber is not reached to an appropriate temperature in a case where a substrate is initially introduced into the chamber after a process is started, thereby heating the substrate to an appropriate process temperature.

Description

Spray header assembly
Technical Field
The present invention relates to a showerhead assembly (showerhead assembly), and more particularly, to a showerhead assembly that prevents a first effect (first effect) from being generated when the temperature inside a chamber is not reached to an appropriate temperature in the case where a substrate is initially introduced into the chamber after a process is started, thereby heating the substrate to an appropriate process temperature.
Background
In general, a conventional substrate processing apparatus may perform deposition, etching, etc. processes on an upper surface of a substrate, or perform deposition, etching, etc. processes on a lower surface of a substrate.
In this case, in the conventional substrate processing apparatus that provides a process such as deposition or etching on the upper surface of the substrate, when the substrate is first introduced into the chamber, the temperature inside the chamber may not reach an appropriate temperature, and thus a so-called "first effect" may occur in which the process cannot be smoothly performed on the substrate.
In addition, in the conventional another substrate processing apparatus that provides processes such as deposition and etching on the lower surface of the substrate, it is difficult to separately dispose a unit for heating the substrate by disposing process equipment or the like on the lower surface of the substrate.
Disclosure of Invention
[ problem to be solved by the invention ]
The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a showerhead assembly capable of preventing a first effect caused by a temperature in a chamber not reaching an appropriate temperature when a substrate is initially introduced into the chamber after a process is started, and further heating the substrate to an appropriate process temperature.
[ means of solving the problems ]
The object of the invention as described above is achieved by a showerhead assembly characterized by comprising: a main cover (main cover) connected to the chamber top cover (lid) and supplying a Radio Frequency (RF) power; and a showerhead heater connected to a lower portion of the main cover to be electrically connected with the main cover, supplying a process gas toward an inside of the chamber, and heating the substrate.
Here, the main cover may include: the main board is connected with the chamber top cover in an insulating way; and a cover plate connected to an upper portion of the main plate and protruding toward the upper portion.
In another aspect, the showerhead heater may be spaced apart from the main plate at a predetermined interval at a lower portion of the main plate.
In addition, a first cooling flow path and an RF power supply unit that supplies RF power may be disposed in the main board.
Further, the showerhead heater may include: a faceplate (face plate) formed with an injection hole for injecting a process gas toward the substrate; a back plate (back plate) connected to an upper portion of the panel and having a plurality of heater sections; and a valve rod (stem) that connects the back plate and the cover plate and protrudes upward.
In this case, the showerhead assembly may further include an O-ring disposed between an uppermost face of the protrusion of the valve stem and the lower surface of the cap plate to seal between the valve stem and the cap plate, and a second cooling flow path disposed adjacent to the O-ring is further disposed in the cap plate.
In another aspect, the showerhead assembly may be arranged with a process gas supply pipe that supplies process gas between the back plate and the face plate through the valve stem, and an electrical load that supplies electrical power to the heater section.
The showerhead assembly may further include a curtain gas supply passage penetrating the cover plate to supply a curtain gas (curtain gas), and the curtain gas supply passage may supply the curtain gas along an outer circumferential surface of the showerhead heater through a curtain gas connection passage.
In another aspect, the air curtain air connection flow path may include a first flow path between a lower surface of the cover plate and an upper surface of the main plate, a second flow path between an outer sidewall of the valve stem and an inner sidewall of the opening of the main plate, a third flow path between an upper surface of the back plate and a lower surface of the main plate, and a fourth flow path between the showerhead heater and a chamber top cover.
In addition, a hollow portion may be formed inside the valve stem.
[ Effect of the invention ]
According to the present invention having the above-described configuration, the first effect is prevented by supplying heat using the showerhead heater, and thus the substrate can be heated to an appropriate process temperature.
In addition, according to the present invention, the heater portion and the O-ring are arranged as far apart as possible to provide the cooling flow path, so that damage or breakage of the O-ring due to heat generation of the heater portion can be prevented.
Drawings
Fig. 1 is a perspective view of a showerhead assembly according to one embodiment of the invention.
Fig. 2 is an exploded perspective view of the showerhead assembly.
Figure 3 is a side cross-sectional view of the showerhead assembly.
Detailed Description
Hereinafter, a structure of the showerhead assembly according to an embodiment of the present invention is described in detail with reference to the accompanying drawings.
Fig. 1 is a perspective view of a showerhead assembly 1000 according to an embodiment of the invention, fig. 2 is an exploded perspective view of the showerhead assembly 1000, and fig. 3 is a side sectional view of the showerhead assembly 1000.
Referring to fig. 1 to 3, the showerhead assembly 1000 may include: a main cover 300 connected to the chamber top cover 10 and supplied with RF power; and a showerhead heater 500 connected to a lower portion of the main cover 300 to be electrically connected to the main cover 300, for supplying a process gas toward an inside of a chamber (not shown) and heating a substrate (not shown).
The showerhead assembly 1000 according to the present invention is generally composed of a main lid 300 and a showerhead heater 500, and RF power is supplied so that a substrate process can be performed using plasma. In this case, the main cover 300 of the showerhead assembly 1000 is used to supply RF power, and the showerhead heater 500 is electrically connected to the main cover 300 to supply RF power.
Accordingly, the showerhead heater 500 is electrically connected with the main cover 300 to form an equipotential. Even when plasma is generated between the showerhead heater 500 and the lower electrode in the chamber to process the substrate, so-called "parasitic plasma" is not generated between the main lid 300 and the showerhead heater 500. Hereinafter, description will be made specifically.
The main cover 300 may include: a main board 340 connected with the chamber top cover 10 in an insulating manner; and a cover plate 310 connected to an upper portion of the main plate 340 and protruding toward the upper portion. Although the main plate 340 and the cover plate 310 are shown as separate components in the drawings, the present invention is not limited thereto, and the main plate 340 and the cover plate 310 may be formed of a single component.
The main plate 340 may have an opening 344 formed at a central portion and may be formed in a circular shape. Here, the "circular shape" is merely an example, and may be formed in various forms.
An RF power supply part 342 for supplying RF power as described above may be provided on the main board 340. RF power supplied from an RF power supply unit (not shown) is supplied to the main board 340 through the RF power supply unit 342.
The main board 340 is connected with the chamber top cover 10 in an insulating manner. For example, a first insulator 600 may be disposed between the main board 340 and the chamber top cover 10 to insulate it.
On the other hand, first cooling flow paths (344, 346) through which cooling water flows may be provided in the main plate 340. When the showerhead heater 500 heats the substrate, the temperature of the main plate 340 may be cooled by the first cooling flow paths (344, 346) to prevent overheating.
The cover 310 is connected to the upper surface of the main board 340. The cover plate 310 may be provided in a shape protruding toward the upper portion. A process gas supply hole 315 for supplying a process gas or the like is formed in a central portion of the protruding upper surface of the cover plate 310. The process gas and the like are supplied to the showerhead heater 500 through the process gas supply holes 315.
On the other hand, a second cooling flow path 318 through which cooling water flows is provided in the cover plate 310. The second cooling flow path 318 maintains the temperatures of the various O-rings (810, 820) while cooling the cover plate 310, thereby preventing the O-rings (810, 820) from being broken.
That is, the cover plate 310 is connected with the showerhead heater 500 and the second insulator 100, which will be described later, and various O-rings (810, 820) for sealing are arranged between the cover plate 310 and the valve stem 510 of the showerhead heater 500 and between the second insulator 100.
In this case, an O-ring 810 between the valve stem 510 and the cap plate 310 may be disposed between the uppermost surface of the protrusion of the valve stem 510 and the lower surface of the cap plate 310. In addition, an O-ring 820 between the cap plate 310 and the second insulator 100 may be disposed between the uppermost surface of the cap plate 310 and the lower surface of the second insulator 100.
Assuming that the cover plate 310 is simply provided in a planar shape, the interval between the showerhead heater 500 and the O-rings (810, 820) is too close, so that the O-rings (810, 820) may be broken by a thermal fire emitted from the showerhead heater 500.
Accordingly, in order to solve such a problem, the cover 310 and the valve stem 510 are configured to protrude upward, and further, by disposing O-rings (810, 820) on the uppermost surfaces of the protrusions of the cover 310 and the valve stem 510, the heater portion 532 of the shower head heater 500 is disposed as far as possible from the O-rings (810, 820), so that breakage of the O-rings (810, 820) is prevented for the first time.
In addition, the present invention can prevent the O-rings (810, 820) from overheating by disposing the second cooling flow path 318 in the cap plate 310, so that breakage of the O-rings (810, 820) can be secondarily prevented.
The second insulator 100 may be connected to an upper portion of the cap plate 310. The second insulator 100 is provided to insulate the cap plate 310 from other constituent elements.
Fastening holes 130 are formed in the second insulator 100, and may be connected to the upper surface of the cap plate 310 by fastening units (140) such as screws. In this case, the second insulator 100 may have an opening 110 formed at an inner central portion. Accordingly, as will be described below, various conduits or the like for supplying process gases or the like may be disposed through the opening 110.
On the other hand, the showerhead heater 500 may be disposed by being connected to the lower portion of the main cover 300 described above. That is, the showerhead heater 500 may be disposed at a lower portion of the main plate 340 to be spaced apart from the main plate 340 at a predetermined interval.
For example, the showerhead heater 500 may include: a panel 550 formed with an injection hole 552 for injecting a process gas toward the substrate; a back plate 530 connected to an upper portion of the front plate 550 and having a plurality of heater portions 532; and a valve stem 510 connecting the back plate 530 and the cover plate 310 and protruding upward.
The panel 550 is disposed toward the substrate and supplies a process gas or the like toward the substrate through the injection holes 552.
The back plate 530 is disposed on an upper portion of the face plate 550. In this case, the back plate 530 is disposed apart from the front plate 550, and a space between the back plate 530 and the front plate 550 forms a dispersion space 556 in which a process gas or the like is dispersed.
On the other hand, the showerhead assembly 1000 according to the present invention has a plurality of heater sections 532 in the back plate 530 so that heat can be provided.
In a conventional substrate processing apparatus that provides a process such as deposition on the upper surface of a substrate, when the substrate is first introduced into a chamber, the temperature inside the chamber may not reach an appropriate temperature, and thus a so-called "first effect" may occur in which the substrate cannot be processed smoothly. In the present invention, the first effect described above can be reduced as much as possible by heating the inside of the chamber using the back plate 530.
In addition, in the conventional another substrate processing apparatus that provides a process such as deposition on the lower surface of a substrate, a deposition device or the like is disposed on the lower surface of the substrate, and it is difficult to separately dispose a unit that heats the substrate. In the present invention, the substrate is heated to a temperature suitable for the process by using the back plate 530, so that the process can be smoothly performed on the substrate.
On the other hand, the valve stem 510 connects the back plate 530 and the cover plate 310 to each other. In this case, the valve stem 510 is electrically connected while physically connecting the back plate 530 with the cap plate 310. Accordingly, the RF power supplied to the main board 340 is supplied to the back plate 530 and the front plate 550 through the cover plate 310 and the valve stem 510.
The valve stem 510 has a shape protruding toward an upper portion in the back plate 530. In this case, the outer shape of the valve stem 510 is formed in a manner corresponding to the inner shape of the cover 310.
As described above, by disposing O-rings (810, 820) at the uppermost projecting ends of the valve stem 510, the heater portion 532 of the backplate 530 is spaced as far as possible. This has been described, and thus a repetitive description is omitted.
Alternatively, the process gas supply pipe 316 may be disposed through the valve stem 510. The process gas supply pipe 316 may be disposed to penetrate the opening 110 of the second insulator 100, the process gas supply hole 315 of the cover plate 310, and the through hole 514 of the valve stem 510. A process gas for treating a substrate is supplied to the process gas supply pipe 316. In this case, the process gas may include an inert gas. For example, in the case of a substrate processing apparatus for depositing a lower surface of a substrate, the showerhead assembly 1000 according to the present invention may supply an inert gas toward an upper portion of the substrate through the process gas supply pipe 316.
The lower end of the process gas supply pipe 316 is connected to a dispersion space 556 between the back plate 530 and the front plate 550, and process gas or the like is supplied using the dispersion space 556.
On the other hand, an electric load 320 for supplying electric power to the heater portion 532 may be disposed inside the valve stem 510.
For example, a first connection hole 314 may be formed in the cap plate 310, and a second connection hole 512 corresponding to the first connection hole 314 may be formed in the valve stem 510. The power load 320 may be disposed through the first and second connection holes 314 and 512.
In this case, a fixing portion 322 for fixing the electric load 320 may be disposed inside the valve rod 510. Since RF power is supplied to the valve stem 510 as described above, the fixing portion 322 is preferably made of an insulating material, and is thus provided so as to be insulated from the valve stem 510.
The lower end portion of the power load 320 is connected to the heater portion 532 to supply necessary power to the heater portion 532.
On the other hand, a hollow 518 filled with air is provided inside the valve stem 510. That is, a hollow 518 filled with air is provided inside the valve stem 510 in addition to the process gas supply pipe 316 and the power load 320. Such a hollow 518 may serve as a heat insulation space that prevents heat of the heater 532 from being transferred to the O-rings (810, 820) or the like on the upper portion of the valve stem 510 and being lost. Further, even in the case where the hollow 518 is provided inside the valve stem 510, RF power is provided along the surface of the valve stem 510 due to skin effect (skin effect), so that loss of RF power does not occur.
On the other hand, the showerhead assembly 1000 according to the present invention may supply a gas curtain gas containing an inert gas or the like along the outer circumferential surface of the showerhead heater 500. The gas curtain gas allows the process gas supplied from the panel 550 to be supplied only toward the upper surface of the substrate, and functions to prevent the process gas from being supplied to other regions.
In the case of the substrate processing apparatus for depositing a thin film on a lower surface of a substrate according to the showerhead assembly 1000 of the present invention, the gas curtain gas and the inert gas may be supplied toward the upper surface of the substrate through the faceplate 550. The inert gas supplied from the panel 550 prevents deposition on the upper surface of the substrate, and the gas curtain gas can suppress a phenomenon in which the process gas flows back due to the merging of the process gas flowing upward from the periphery of the substrate and the inert gas flowing downward.
As shown in fig. 3, in order to supply the air curtain gas, an air curtain gas supply passage 312 may be provided to supply the air curtain gas through the cover 310.
Specifically, a gas curtain gas supply hole 120 is formed in the second insulator 100, and an upper end portion of the gas curtain gas supply flow path 312 of the cover 310 is connected to the gas curtain gas supply hole 120.
On the other hand, the lower end of the gas curtain gas supply flow path 312 is provided through a gas curtain gas connection flow path 700 so that gas curtain gas is supplied along the outer circumferential surface of the showerhead heater 500.
Here, the gas curtain gas connection flow path 700 is not formed of a separate gas pipe, duct, or the like, but is provided by the space or interval between the constituent elements described above. Therefore, the cost and time for forming the individual flow paths can be reduced, and the flow paths can be formed with a simpler configuration.
Specifically, the air curtain air connection flow path 700 may be composed of: a first flow path 705 between the lower surface of the cover plate 310 and the upper surface of the main plate 340, a second flow path 710 between the outer side wall of the valve stem 510 and the inner side wall of the opening 344 of the main plate 340, a third flow path 712 between the upper surface of the back plate 530 and the lower surface of the main plate 340, and a fourth flow path 714 between the showerhead heater 500 and the chamber top cover 10.
The above-described air curtain air supply flow path 312 may be connected from the upper surface to the lower surface of the cover plate 310. In this case, a lower surface of the cover 310 is partially spaced apart from an upper surface of the main plate 340 to form the first flow path 705, and the air curtain gas supply flow path 312 may be connected to the first flow path 705.
On the other hand, the valve stem 510 may be spaced apart from the inner surface of the opening part 344 of the main plate 340 by a predetermined distance and connected to the cap plate 310. In this case, a space between the outer sidewall of the valve stem 510 and the inner sidewall of the opening part 344 of the main plate 340 may form a second flow path 710.
The second flow path 710 may be connected at a lower end portion to a third flow path 712 between the upper surface of the back plate 530 and the lower surface of the main plate 340. In addition, the third flow path 712 is connected to a fourth flow path 714 between the showerhead heater 500 and the chamber lid 10. Since the first insulator 600 insulating the main plate 340 is disposed at the chamber lid 10, the fourth flow path 714 may be formed substantially between the showerhead heater 500 and the first insulator 600.
Accordingly, the gas curtain gas supplied through the gas curtain gas supply passage 312 may be supplied along the outer circumferential surface of the showerhead heater 500 through the first passage 705, the second passage 710, the third passage 712, and the fourth passage 714.
On the other hand, if the width of the fourth flow path 714, i.e., the width between the showerhead heater 500 and the first insulator 600 is too large, a large amount of gas curtain gas is required in order to maintain the effect of the gas curtain gas. Accordingly, the width of the fourth flow path 714 may be maintained at a spacing of about 1mm to 10mm, and preferably may be maintained at a spacing of about 4mm to 8 mm.
Although the present invention has been described above with reference to the preferred embodiments, various modifications and changes can be made by one skilled in the relevant art without departing from the spirit and scope of the present invention as set forth in the appended claims. Accordingly, it is considered that the implementation of the modification is included in the technical scope of the present invention if the implementation of the modification basically includes the constituent elements of the claims of the present invention.

Claims (10)

1. A showerhead assembly, comprising:
the main cover body is connected with the chamber top cover and is used for supplying radio frequency power; and
and a showerhead heater connected to a lower portion of the main cover to be electrically connected with the main cover, supplying a process gas toward the inside of the chamber, and heating the substrate.
2. The showerhead assembly of claim 1,
the main cover body comprises: the main board is connected with the chamber top cover in an insulating way; and a cover plate connected to an upper portion of the main plate and protruding toward the upper portion.
3. The showerhead assembly of claim 2,
the shower head heater is disposed at a lower portion of the main board to be spaced apart from the main board at a predetermined interval.
4. The showerhead assembly of claim 2,
a first cooling flow path and a radio frequency power supply unit for supplying radio frequency power are disposed in the main board.
5. The showerhead assembly of claim 2,
the shower head heater includes:
a panel formed with an injection hole for injecting a process gas toward the substrate; a back plate connected to an upper portion of the front plate and having a plurality of heater parts; and a valve rod connecting the back plate and the cover plate and protruding toward the upper part.
6. The showerhead assembly of claim 5, further comprising:
an O-ring disposed between an uppermost surface of the protrusion of the valve stem and a lower surface of the cap plate to seal between the valve stem and the cap plate,
a second cooling flow path disposed adjacent to the O-ring is also disposed in the cover plate.
7. The showerhead assembly of claim 5,
a process gas supply pipe for supplying a process gas between the back plate and the face plate through the valve stem and an electric load for supplying electric power to the heater section are arranged.
8. The showerhead assembly of claim 5, comprising:
and an air curtain gas supply passage penetrating the cover plate to supply air curtain gas, wherein the air curtain gas supply passage supplies the air curtain gas along the outer circumferential surface of the shower head heater through an air curtain gas connection passage.
9. The showerhead assembly of claim 8,
the air curtain air connection flow path includes a first flow path between a lower surface of the cover plate and an upper surface of the main plate, a second flow path between an outer side wall of the valve rod and an inner side wall of the opening of the main plate, a third flow path between an upper surface of the back plate and a lower surface of the main plate, and a fourth flow path between the shower head heater and the chamber top cover.
10. The showerhead assembly of claim 5,
a hollow portion is formed inside the valve stem.
CN202211605719.9A 2021-12-16 2022-12-14 Spray header assembly Pending CN116266528A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020210181120A KR20230091724A (en) 2021-12-16 2021-12-16 Showerhead assembly
KR10-2021-0181120 2021-12-16

Publications (1)

Publication Number Publication Date
CN116266528A true CN116266528A (en) 2023-06-20

Family

ID=86744354

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211605719.9A Pending CN116266528A (en) 2021-12-16 2022-12-14 Spray header assembly

Country Status (2)

Country Link
KR (1) KR20230091724A (en)
CN (1) CN116266528A (en)

Also Published As

Publication number Publication date
KR20230091724A (en) 2023-06-23

Similar Documents

Publication Publication Date Title
JP6207648B2 (en) Chamber lid heater ring assembly
JP4955539B2 (en) Apparatus for plasma processing comprising showerhead electrode and heater
JP6168823B2 (en) Symmetric plasma processing apparatus and lid assembly
US8419893B2 (en) Shielded lid heater assembly
KR101810065B1 (en) Tightly-fitted ceramic insulator on large-area electrode
JP2004285479A (en) Stacked showerhead assembly for delivering gas and rf (radio frequency) power to reaction chamber
JP2002540622A (en) Method and apparatus for insulating a high power RF electrode for introducing a plasma discharge gas into a processing chamber
CN112185791B (en) Shower head unit and substrate processing system having the same
KR100726528B1 (en) Antenna coil assemblies for substrate processing chambers
CN115244677A (en) Substrate support assembly with arc resistant coolant conduit
JP2021521648A (en) Ceramic face plate to be heated
KR100483282B1 (en) Chemical Vapor Deposition Apparatus
CN116266528A (en) Spray header assembly
KR102509629B1 (en) High frequency induction heating device for film deposition facilities
KR101445278B1 (en) Apparatus for semiconductor
KR20110072282A (en) Protecting member and apparatus for generating plasma including the same
KR101537986B1 (en) Substrate processing apparatus
CN114360994B (en) Substrate processing apparatus
KR20090005735A (en) Apparatus for processing plasma
KR20070009186A (en) Chemical vapor deposition apparatus
KR101218554B1 (en) Plasma generation apparatus for uniformly generating large scale inductively coupled plasma
KR20220132707A (en) High frequency induction heating device
KR20230139097A (en) Diamond film forming apparatus using microwave plasma chemical vapor deposition having a ring shaped electrode
JP2003313610A (en) Plasma heat treatment furnace
KR20210062299A (en) Shower head unit and system for treating substrate with the shower head unit

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination