CN116252502B - Method for improving dielectric property of polypropylene film based on interface deposition modification - Google Patents

Method for improving dielectric property of polypropylene film based on interface deposition modification Download PDF

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CN116252502B
CN116252502B CN202310241375.6A CN202310241375A CN116252502B CN 116252502 B CN116252502 B CN 116252502B CN 202310241375 A CN202310241375 A CN 202310241375A CN 116252502 B CN116252502 B CN 116252502B
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polypropylene
film
polyditoluene
mixture
placing
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CN116252502A (en
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肖萌
张志远
杜伯学
刘浩梁
冉昭玉
陈可
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Tianjin University
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29DPRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D7/00Producing flat articles, e.g. films or sheets
    • B29D7/01Films or sheets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
    • H01G4/14Organic dielectrics
    • H01G4/145Organic dielectrics vapour deposited
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/33Thin- or thick-film capacitors 
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2323/00Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
    • C08J2323/02Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
    • C08J2323/10Homopolymers or copolymers of propene
    • C08J2323/12Polypropene
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2471/00Characterised by the use of polyethers obtained by reactions forming an ether link in the main chain; Derivatives of such polymers
    • C08J2471/08Polyethers derived from hydroxy compounds or from their metallic derivatives
    • C08J2471/10Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
    • C08J2471/12Polyphenylene oxides

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)

Abstract

The invention discloses a method for improving dielectric property of a polypropylene film based on interface deposition modification, which comprises the following steps of S1, washing polypropylene and polyditoluene, and respectively putting the washed polypropylene and polyditoluene into a vacuum oven for drying; s2, putting the polypropylene dried in the step S1 into a double-roller mixer, slowly adding the polyditoluene, and continuously stirring to obtain a mixture; s3, placing the mixture in the S2 into a hot press for hot pressing, and cooling to obtain a polypropylene mixture film; s4, placing the dried polypropylene in the S1 into a hot press for hot-pressing cooling to obtain a polypropylene film; s5, placing the three films into a hot press according to the sequence of the polypropylene mixture film, the polypropylene film and the polypropylene mixture film, and cooling to obtain the polypropylene modified film. According to the method for improving the dielectric property of the polypropylene film based on the interface deposition modification, which is disclosed by the invention, the polyditoluene is uniformly deposited on the surface of the polypropylene film, and a carrier capturing deep trap is formed by adding an interface polarization layer, so that a carrier injection potential barrier is improved.

Description

Method for improving dielectric property of polypropylene film based on interface deposition modification
Technical Field
The invention relates to the technical field of capacitor films, in particular to a method for improving dielectric properties of a polypropylene film based on interface deposition modification.
Background
The metallized film capacitor is core equipment of a modern power system and a renewable energy system based on a power electronic technology, and has the advantages of small volume, light weight, small inductance, self-healing function and the like. Polypropylene (PP) is currently the most widely used dielectric material in thin film capacitors due to reliable insulation properties and excellent charge and discharge efficiency. In the actual operation process, a large amount of charges are injected into the polypropylene film by the electrode under the comprehensive action of the electric-thermal field, and the high-speed movement of the charges seriously damages the polypropylene microstructure, so that the dielectric property is possibly reduced, and the safe and stable operation of the whole direct-current transmission system is threatened.
Disclosure of Invention
The invention aims to provide a method for improving the dielectric property of a polypropylene film based on interface deposition modification, which solves the problem of dielectric property reduction caused by charge injection into the polypropylene film.
In order to achieve the aim, the invention provides a method for improving the dielectric property of a polypropylene film based on interface deposition modification, which comprises the following steps of S1, washing polypropylene and polyditoluene by sequentially using deionized water and absolute ethyl alcohol respectively, and respectively putting the washed polypropylene and polyditoluene into a vacuum oven for drying for 10-30min at 50-70 ℃;
s2, placing the polypropylene dried in the step S1 into a double-roller mixer, mixing for 5-30min at 180-200 ℃, slowly adding the polyditoluene, and continuously stirring for 5-20min to obtain a mixture;
s3, placing the mixture in the S2 into a hot press for hot pressing, and performing hot pressing for 3-10min at 180-200 ℃ and 5-30MPa, and cooling to 90-150 ℃ to obtain a polypropylene mixture film;
s4, placing the dried polypropylene in the S1 into a hot press for hot pressing, and cooling to 90-150 ℃ to obtain a polypropylene film, wherein the temperature of the polypropylene is 180-200 ℃ and the pressure of the polypropylene is 5-30MPa for 3-10 min;
s5, placing the three films into a hot press according to the sequence of the polypropylene mixture film, the polypropylene film and the polypropylene mixture film, hot-pressing for 3-10min at 180-200 ℃ and 5-30MPa, and cooling to 90-150 ℃ to obtain the polypropylene modified film.
Preferably, in S1, the polyditoluene is one or more of N-type polyditoluene, C-type polyditoluene, D-type polyditoluene, F-type polyditoluene and HT-type polyditoluene.
Preferably, in S3, the polypropylene blend film has a thickness of 5 to 30. Mu.m.
Preferably, in S4, the thickness of the polypropylene film is 5-30 μm.
Therefore, the method for improving the dielectric property of the polypropylene film based on the interface deposition modification by adopting the method has the beneficial effects that:
1. depositing a certain content of polyditoluene on the surface of a polypropylene film to form a uniform and stable organic modified layer, thereby inhibiting charge injection and changing charge migration characteristics;
2. the regulation and control of charge injection and charge transport of the polypropylene modified film are realized, the dielectric property of the film is improved, the occurrence of insulation failure faults is avoided, and the reliability of a direct current transmission system is improved;
3. uniformly depositing a certain content of polyditoluene on the surface of a polypropylene film, forming a carrier capturing deep trap by adding an interface polarization layer, and improving a carrier injection potential barrier;
4. the surface deposition method adopts a blending structure design, and the blending structure adopts a sandwich structure of a polypropylene mixture film, a polypropylene film and a polypropylene mixture film.
The technical scheme of the invention is further described in detail through the drawings and the embodiments.
Drawings
FIG. 1 is a graph of the electrical conductivity of polypropylene modified films of examples 1-5 at various temperatures.
Detailed Description
The technical scheme of the invention is further described below through the attached drawings and the embodiments.
Unless defined otherwise, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The terms "first," "second," and the like, as used herein, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed.
Example 1
S1, respectively washing polypropylene and N-type polyditoluene by using deionized water and absolute ethyl alcohol in sequence, respectively putting the washed polypropylene and N-type polyditoluene into a vacuum oven, and drying the polypropylene and the N-type polyditoluene at 60 ℃ for 20min.
S2, placing the polypropylene dried in the step S1 into a double-roller mixer, mixing for 10min at 190 ℃, slowly adding N-type polyditoluene, and continuously stirring for 10min to obtain a mixture. Wherein the mass fraction of the added N-type polyditoluene is 0.05wt%.
S3, placing the mixture in the step S2 into a hot press for hot pressing, hot pressing for 5min at 190 ℃ and 25MPa, and cooling to 120 ℃ to obtain the polypropylene mixture film.
S4, placing the dried polypropylene in the S1 into a hot press for hot pressing, and cooling to 120 ℃ to obtain the polypropylene film, wherein the hot pressing is carried out for 5min at 190 ℃ and 25 MPa.
S5, placing the three films into a hot press according to the sequence of the polypropylene mixture film, the polypropylene film and the polypropylene mixture film, hot-pressing for 5min at 190 ℃ and 25MPa, and cooling to 120 ℃ to obtain the polypropylene modified film.
Example 2
S1, respectively washing polypropylene and C-type polyditoluene by using deionized water and absolute ethyl alcohol in sequence, respectively putting the washed polypropylene and C-type polyditoluene into a vacuum oven, and drying the washed polypropylene and C-type polyditoluene at 60 ℃ for 20min.
S2, placing the polypropylene dried in the step S1 into a double-roller mixer, mixing for 10min at 190 ℃, slowly adding the C-type polyditoluene, and continuously stirring for 10min to obtain a mixture. Wherein the mass fraction of the added C-type polyditoluene is 0.05wt%.
S3, placing the mixture in the step S2 into a hot press for hot pressing, hot pressing for 5min at 190 ℃ and 25MPa, and cooling to 120 ℃ to obtain the polypropylene mixture film.
S4, placing the dried polypropylene in the S1 into a hot press for hot pressing, and cooling to 120 ℃ to obtain the polypropylene film, wherein the hot pressing is carried out for 5min at 190 ℃ and 25 MPa.
S5, placing the three films into a hot press according to the sequence of the polypropylene mixture film, the polypropylene film and the polypropylene mixture film, hot-pressing for 5min at 190 ℃ and 25MPa, and cooling to 120 ℃ to obtain the polypropylene modified film.
Example 3
S1, respectively washing polypropylene and D-type polyditoluene by using deionized water and absolute ethyl alcohol in sequence, respectively putting the washed polypropylene and D-type polyditoluene into a vacuum oven, and drying the washed polypropylene and D-type polyditoluene at 60 ℃ for 20min.
S2, placing the polypropylene dried in the step S1 into a double-roller mixer, mixing for 10min at 190 ℃, slowly adding the D-type polyditoluene, and continuously stirring for 10min to obtain a mixture. Wherein the mass fraction of the added D-type polyditoluene is 0.05wt%.
S3, placing the mixture in the step S2 into a hot press for hot pressing, hot pressing for 5min at 190 ℃ and 25MPa, and cooling to 120 ℃ to obtain the polypropylene mixture film.
S4, placing the dried polypropylene in the S1 into a hot press for hot pressing, and cooling to 120 ℃ to obtain the polypropylene film, wherein the hot pressing is carried out for 5min at 190 ℃ and 25 MPa.
S5, placing the three films into a hot press according to the sequence of the polypropylene mixture film, the polypropylene film and the polypropylene mixture film, hot-pressing for 5min at 190 ℃ and 25MPa, and cooling to 120 ℃ to obtain the polypropylene modified film.
Example 4
S1, respectively washing polypropylene and F-type polyditoluene by using deionized water and absolute ethyl alcohol in sequence, respectively putting the washed polypropylene and F-type polyditoluene into a vacuum oven, and drying the washed polypropylene and F-type polyditoluene at 60 ℃ for 20min.
S2, placing the polypropylene dried in the step S1 into a double-roller mixer, mixing for 10min at 190 ℃, slowly adding F-type polyditoluene, and continuously stirring for 10min to obtain a mixture. Wherein the mass fraction of the added F-type polyditoluene is 0.05wt%.
S3, placing the mixture in the step S2 into a hot press for hot pressing, hot pressing for 5min at 190 ℃ and 25MPa, and cooling to 120 ℃ to obtain the polypropylene mixture film.
S4, placing the dried polypropylene in the S1 into a hot press for hot pressing, and cooling to 120 ℃ to obtain the polypropylene film, wherein the hot pressing is carried out for 5min at 190 ℃ and 25 MPa.
S5, placing the three films into a hot press according to the sequence of the polypropylene mixture film, the polypropylene film and the polypropylene mixture film, hot-pressing for 5min at 190 ℃ and 25MPa, and cooling to 120 ℃ to obtain the polypropylene modified film.
Example 5
S1, respectively washing polypropylene and HT-type polyditoluene by using deionized water and absolute ethyl alcohol in sequence, respectively putting the washed polypropylene and HT-type polyditoluene into a vacuum oven, and drying the washed polypropylene and HT-type polyditoluene at 60 ℃ for 20min.
S2, placing the polypropylene dried in the step S1 into a double-roller mixer, mixing for 10min at 190 ℃, slowly adding HT-type polyditoluene, and continuing stirring for 10min to obtain a mixture. Wherein the added HT type polyditoluene is 0.05wt%.
S3, placing the mixture in the step S2 into a hot press for hot pressing, hot pressing for 5min at 190 ℃ and 25MPa, and cooling to 120 ℃ to obtain the polypropylene mixture film.
S4, placing the dried polypropylene in the S1 into a hot press for hot pressing, and cooling to 120 ℃ to obtain the polypropylene film, wherein the hot pressing is carried out for 5min at 190 ℃ and 25 MPa.
S5, placing the three films into a hot press according to the sequence of the polypropylene mixture film, the polypropylene film and the polypropylene mixture film, hot-pressing for 5min at 190 ℃ and 25MPa, and cooling to 120 ℃ to obtain the polypropylene modified film.
Example 6
The polypropylene modified films of examples 1 to 5 were tested for electrical conductivity at various temperatures and the test results are shown in FIG. 1.
Comparative example 1
S1, washing polypropylene by using deionized water and absolute ethyl alcohol in sequence, and drying the polypropylene in a vacuum oven at 60 ℃ for 20 minutes after washing.
S2, placing the dried polypropylene in the S1 into a hot press for hot pressing, and cooling to 120 ℃ to obtain the polypropylene film, wherein the hot pressing is carried out for 5min at 190 ℃ and 25 MPa.
S3, placing the three polypropylene films into a hot press, hot-pressing for 5min at 190 ℃ and 25MPa, and cooling to 120 ℃ to obtain the polypropylene film.
The polypropylene modified films of examples 1 to 5 and the polypropylene film of comparative example 1 were tested for breakdown field strength, and the test results are shown in Table 1.
TABLE 1 breakdown field strengths before and after modification of Polypropylene films at different temperatures
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention and not for limiting it, and although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that: the technical scheme of the invention can be modified or replaced by the same, and the modified technical scheme cannot deviate from the spirit and scope of the technical scheme of the invention.

Claims (3)

1. A method for improving dielectric property of a polypropylene film based on interface deposition modification is characterized by comprising the following steps:
s1, respectively washing polypropylene and polyditoluene by using deionized water and absolute ethyl alcohol in sequence, respectively putting the washed polypropylene and polyditoluene into a vacuum oven, and drying the polypropylene and the polyditoluene for 10-30min at 50-70 ℃;
in S1, the polyditoluene is one or more of N-type polyditoluene, C-type polyditoluene, D-type polyditoluene, F-type polyditoluene and HT-type polyditoluene;
s2, placing the polypropylene dried in the step S1 into a double-roller mixer, mixing for 5-30min at 180-200 ℃, slowly adding the polyditoluene, and continuously stirring for 5-20min to obtain a mixture;
s3, placing the mixture in the S2 into a hot press for hot pressing, and performing hot pressing for 3-10min at 180-200 ℃ and 5-30MPa, and cooling to 90-150 ℃ to obtain a polypropylene mixture film;
s4, placing the dried polypropylene in the S1 into a hot press for hot pressing, and cooling to 90-150 ℃ to obtain a polypropylene film, wherein the temperature of the polypropylene is 180-200 ℃ and the pressure of the polypropylene is 5-30MPa for 3-10 min;
s5, placing the three films into a hot press according to the sequence of the polypropylene mixture film, the polypropylene film and the polypropylene mixture film, hot-pressing for 3-10min at 180-200 ℃ and 5-30MPa, and cooling to 90-150 ℃ to obtain the polypropylene modified film.
2. The method for improving the dielectric properties of the polypropylene film based on the interfacial deposition modification, according to claim 1, wherein the method comprises the following steps: in S3, the thickness of the polypropylene mixture film is 5-30 μm.
3. The method for improving the dielectric properties of the polypropylene film based on the interfacial deposition modification, according to claim 1, wherein the method comprises the following steps: in S4, the thickness of the polypropylene film is 5-30 μm.
CN202310241375.6A 2023-03-13 2023-03-13 Method for improving dielectric property of polypropylene film based on interface deposition modification Active CN116252502B (en)

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Citations (13)

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JPH0199837A (en) * 1987-10-12 1989-04-18 Chisso Corp Metal-polypropylene laminated composite
US5256176A (en) * 1990-03-12 1993-10-26 Mitsui Petrochemical Industries, Ltd. Film electret and an electret filter
JPH11162779A (en) * 1997-11-27 1999-06-18 Toray Ind Inc Polypropylene film for capacitor
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CN113307949A (en) * 2021-03-22 2021-08-27 西安交通大学 Parylene film for high-temperature energy storage capacitor and preparation method thereof
CN114148004A (en) * 2022-02-07 2022-03-08 天津大学 Method for improving high-temperature dielectric property of polypropylene film for capacitor
CN115195004A (en) * 2022-07-18 2022-10-18 天津大学 Capacitor polypropylene film high-temperature breakdown performance improving method based on gamma ray irradiation crosslinking modification
CN115547687A (en) * 2022-09-27 2022-12-30 中国科学院电工研究所 All-organic dielectric film with sandwich structure and preparation method thereof

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US3327184A (en) * 1965-12-13 1967-06-20 Union Carbide Corp Wound capacitor and method of making
JPH0199837A (en) * 1987-10-12 1989-04-18 Chisso Corp Metal-polypropylene laminated composite
US5256176A (en) * 1990-03-12 1993-10-26 Mitsui Petrochemical Industries, Ltd. Film electret and an electret filter
JPH11162779A (en) * 1997-11-27 1999-06-18 Toray Ind Inc Polypropylene film for capacitor
UA80997C2 (en) * 2005-06-09 2007-11-26 Inst Of Pulse Pcocesses And Te Capacitor with film-type dielectric for boring devices
CN101882507A (en) * 2009-05-08 2010-11-10 北京化工大学 Multilayered structural polymer-based dielectric composite material and preparation method thereof
CN101863120A (en) * 2010-06-09 2010-10-20 四川东材科技集团股份有限公司 Manufacturing method of super thin bidirectional stretched polypropylene coarse thin film for capacitor
CN102964665A (en) * 2012-10-31 2013-03-13 安徽省易达电子有限公司 Capacitor film with homogeneous ethylene / alpha olefin copolymer as substrate and preparation method thereof
CN111668024A (en) * 2020-06-05 2020-09-15 国家电网有限公司 Capacitor using modified polypropylene film medium
CN113307949A (en) * 2021-03-22 2021-08-27 西安交通大学 Parylene film for high-temperature energy storage capacitor and preparation method thereof
CN114148004A (en) * 2022-02-07 2022-03-08 天津大学 Method for improving high-temperature dielectric property of polypropylene film for capacitor
CN115195004A (en) * 2022-07-18 2022-10-18 天津大学 Capacitor polypropylene film high-temperature breakdown performance improving method based on gamma ray irradiation crosslinking modification
CN115547687A (en) * 2022-09-27 2022-12-30 中国科学院电工研究所 All-organic dielectric film with sandwich structure and preparation method thereof

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