CN112530705A - SMD solid capacitor and manufacturing method thereof - Google Patents
SMD solid capacitor and manufacturing method thereof Download PDFInfo
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- CN112530705A CN112530705A CN202011433949.2A CN202011433949A CN112530705A CN 112530705 A CN112530705 A CN 112530705A CN 202011433949 A CN202011433949 A CN 202011433949A CN 112530705 A CN112530705 A CN 112530705A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000007787 solid Substances 0.000 title claims abstract description 32
- 238000010438 heat treatment Methods 0.000 claims abstract description 49
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 38
- 239000011888 foil Substances 0.000 claims abstract description 21
- 239000006185 dispersion Substances 0.000 claims abstract description 18
- 238000005470 impregnation Methods 0.000 claims abstract description 17
- 239000007788 liquid Substances 0.000 claims abstract description 8
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 5
- 230000032683 aging Effects 0.000 claims abstract description 4
- 230000000379 polymerizing effect Effects 0.000 claims abstract description 4
- 238000007789 sealing Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 18
- 239000000178 monomer Substances 0.000 claims description 14
- 239000007800 oxidant agent Substances 0.000 claims description 12
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 claims description 4
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 3
- 230000008439 repair process Effects 0.000 claims description 3
- 239000004094 surface-active agent Substances 0.000 claims description 3
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical group O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 claims description 2
- GDCXBZMWKSBSJG-UHFFFAOYSA-N azane;4-methylbenzenesulfonic acid Chemical compound [NH4+].CC1=CC=C(S([O-])(=O)=O)C=C1 GDCXBZMWKSBSJG-UHFFFAOYSA-N 0.000 claims description 2
- WHRAZOIDGKIQEA-UHFFFAOYSA-L iron(2+);4-methylbenzenesulfonate Chemical compound [Fe+2].CC1=CC=C(S([O-])(=O)=O)C=C1.CC1=CC=C(S([O-])(=O)=O)C=C1 WHRAZOIDGKIQEA-UHFFFAOYSA-L 0.000 claims description 2
- KVCGISUBCHHTDD-UHFFFAOYSA-M sodium;4-methylbenzenesulfonate Chemical compound [Na+].CC1=CC=C(S([O-])(=O)=O)C=C1 KVCGISUBCHHTDD-UHFFFAOYSA-M 0.000 claims description 2
- 238000000605 extraction Methods 0.000 abstract description 4
- 238000005476 soldering Methods 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0036—Formation of the solid electrolyte layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
- H01G13/04—Drying; Impregnating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
- H01G9/151—Solid electrolytic capacitors with wound foil electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
The invention discloses an SMD solid capacitor and a manufacturing method thereof. The manufacturing method comprises the following steps: forming a core package by the anode foil, the cathode foil and the electrolytic paper; then carrying out impregnation treatment on the core bag by using dispersion liquid; polymerizing by heating in a time-sharing manner in stages to form a conductive polymer in the core package; assembling the polymerized core package, sealing, and aging; wherein the step-by-step time-sharing heating polymerization is to heat for 55-65 min at 35-45 ℃, 85-95 min at 45-55 ℃, 85-95 min at 55-65 ℃, 25-35 min at 65-75 ℃, 25-35 min at 145-155 ℃, 10-20 min at 160-170 ℃, 10-20 min at 175-185 ℃ and 5-15 min at 205-215 ℃ in sequence. The manufacturing method of the invention adopts specific segmented time-sharing heating polymerization, which not only improves the extraction rate of the impregnation capacity, obviously improves the problems of reflow soldering resistance and electric leakage rise of the solid capacitor, but also avoids the damage of high-temperature treatment on the oxide film of the capacitor, does not influence the service life of the product, obviously improves the electrostatic capacity, and effectively reduces the loss DF value and the impedance ESR compared with the same specification and size.
Description
Technical Field
The invention relates to the technical field of electrolytic capacitors, in particular to an SMD solid-state capacitor and a manufacturing method thereof.
Background
The solid-state capacitor has the advantages of low ESR, good high-frequency characteristic, miniaturization and the like, is applied more and more widely in the current market, and particularly has higher and higher requirements on the capacitor and larger application prospects on various high-end power supplies and electronic products at present when the electronic industry is developed day by day. Compared with a plug-in solid-state capacitor, the SMD solid-state capacitor can improve the production efficiency of electronic products, realize large-scale automatic production, save manpower, time and the like, is particularly low in mechanical cost and expensive in labor in European and American factories, has more urgent requirements on an SMD chip mounting process, and can stimulate the market rapid development of the SMD solid-state capacitor, and has a very wide prospect. The major SMD solid state capacitors currently on the market are panasonic, chemicon, nichicon, taizi such as lonely, yubang, tengyu, etc., while continental areas are short boards. The SMD solid capacitor is in the leading position of the capacitor industry technology at present, is one of the internationalized high technology industries which are acknowledged by the industry to have the most development prospects, directly guides the future development direction of the capacitor industry, and major capacitor manufacturers in various countries, particularly Asia, pay attention to the development of the solid capacitor industry and carry out research and development without investing money.
Temperature and time are two important factors for the polymerization of SMD solid state capacitors to produce conductive polymers. When the polymerization reaction is carried out at a relatively low temperature, the reaction is carried out in a relatively flat state, and the produced polymer has a large molecular weight, a single molecular structure and good regularity, and the polymer with the structure has relatively high electrical conductivity. Moreover, macroscopically, the surface of the polymer film formed in the core package is smooth, the polymer film is more tightly combined with the surface of the dielectric layer, the capacity extraction rate is higher, and the opposite is true for a polymerization product at high temperature. However, the low-temperature polymerization reaction takes a long time to complete the reaction, and under the in-situ polymerization condition, unreacted monomers, oxidants and solvents are easy to remain in the core package during the low-temperature polymerization, which may cause adverse effects on the electrical properties of the capacitor, such as large DF value, reduced electrostatic capacity, increased ESR, and the like.
Disclosure of Invention
In order to make up for the defects of the prior art, the invention provides the SMD solid capacitor and the manufacturing method thereof, and the manufacturing method adopts specific segmented time-sharing heating polymerization, so that the problem of the extraction rate of the impregnation capacity is improved compared with the same specification and size, the problems of reflow soldering resistance and electric leakage rise resistance of the solid capacitor can be obviously improved, the damage of high-temperature treatment on an oxide film of the capacitor can be avoided, the service life of a product is not influenced, the electrostatic capacity is obviously improved, and the loss (DF value) and the impedance ESR are effectively reduced.
The technical problem to be solved by the invention is realized by the following technical scheme:
a method of manufacturing an SMD solid state capacitor comprising the steps of: forming a core package by the anode foil, the cathode foil and the electrolytic paper; then carrying out impregnation treatment on the core bag by using dispersion liquid; polymerizing by heating in a time-sharing manner in stages to form a conductive polymer within the core package; assembling the polymerized core package, sealing, and aging; wherein the content of the first and second substances,
the step-by-step time-sharing heating polymerization is to heat for 55-65 min at 35-45 ℃, 85-95 min at 45-55 ℃, 85-95 min at 55-65 ℃, 25-35 min at 65-75 ℃, 25-35 min at 145-155 ℃, 10-20 min at 160-170 ℃, 10-20 min at 175-185 ℃ and 5-15 min at 205-215 ℃ in sequence.
As a preferred embodiment of the method for manufacturing an SMD solid state capacitor according to the present invention, the step-wise time-division heating polymerization is heating at 40 ℃ for 60min, heating at 50 ℃ for 90min, heating at 60 ℃ for 90min, heating at 70 ℃ for 30min, heating at 150 ℃ for 30min, heating at 165 ℃ for 15min, heating at 180 ℃ for 15min, and heating at 210 ℃ for 10min in this order.
As a preferred embodiment of the method for manufacturing an SMD solid state capacitor according to the present invention, the core package further includes a pretreatment agent before impregnation with the monomer.
In a preferred embodiment of the method for manufacturing an SMD solid state capacitor according to the present invention, the pretreatment agent is a mixed solution of a surfactant and a silane coupling agent.
In a preferred embodiment of the method for manufacturing an SMD solid state capacitor according to the present invention, the step of treating the core pack before impregnation further includes a chemical conversion treatment of the core pack to repair an oxide film on the surface of the anode foil.
In a preferred embodiment of the method for manufacturing an SMD solid capacitor according to the present invention, the impregnation treatment of the dispersion includes impregnation with a monomer dispersion alone and impregnation with an oxidant dispersion alone.
In a preferred embodiment of the method for manufacturing an SMD solid capacitor according to the present invention, the order of the impregnated monomer dispersion liquid and the impregnated oxidant dispersion liquid is not limited.
In a preferred embodiment of the method for manufacturing an SMD solid state capacitor, the dispersion is a mixed solution of a monomer and an oxidizing agent.
As a preferred embodiment of the method for manufacturing an SMD solid state capacitor provided in the present invention, the monomer is a 3, 4-ethylenedioxythiophene solution; the oxidant solution is one or more selected from p-toluenesulfonic acid, sodium p-toluenesulfonate, iron p-toluenesulfonate and ammonium p-toluenesulfonate.
As a preferred embodiment of the method for manufacturing an SMD solid state capacitor, the step of forming the core package by combining the anode foil, the cathode foil and the electrolytic paper refers to folding the anode foil, the cathode foil and the electrolytic paper into the core package or winding the anode foil, the cathode foil and the electrolytic paper into the core package.
An SMD solid state capacitor is manufactured by the above manufacturing method.
The invention has the following beneficial effects:
the manufacturing method of the invention adopts specific segmented time-sharing heating polymerization, not only improves the extraction rate of impregnation capacity compared with the same specification and size, can obviously improve the problems of reflow soldering resistance and electric leakage rise resistance of the solid capacitor, can avoid the damage of high-temperature treatment on the oxide film of the capacitor, does not influence the service life of the product, obviously improves the electrostatic capacity (improved by 49.49%) and effectively reduces the loss (DF value, reduced by 31.65%) and the impedance ESR (reduced by 16.93%) while shortening the polymerization time.
Detailed Description
The present invention will be described in detail with reference to examples, which are only preferred embodiments of the present invention and are not intended to limit the present invention.
Example 1
A method of manufacturing an SMD solid state capacitor, the method comprising the steps of:
(1) cutting the anode foil, the cathode foil and the electrolytic paper into preset sizes, and fixedly connecting an anode lead and a cathode lead on the anode foil and the cathode foil; winding the anode foil, the electrolytic paper and the cathode foil into a core package;
(2) performing chemical conversion treatment on the core package to repair an oxide film on the surface of the anode foil;
(3) impregnating with a pretreatment agent, and drying; the pretreatment agent is a mixed solution of a surfactant and a silane coupling agent;
(4) impregnation of the dispersion liquid: soaking the core wrap in the step (3) in a monomer solution, and drying; soaking in oxidant;
(5) polymerizing by heating in a time-sharing manner in stages to form a conductive polymer within the core package; in particular, the amount of the solvent to be used,
the segmented time-sharing heating polymerization is to heat at 40 ℃ for 60min, at 50 ℃ for 90min, at 60 ℃ for 90min, at 70 ℃ for 30min, at 150 ℃ for 30min, at 165 ℃ for 15min, at 180 ℃ for 15min and at 210 ℃ for 10min in sequence; the total polymerization time is 340 min;
(6) and (4) assembling the polymerized core package, sealing and aging.
Example 2
The present embodiment is different from embodiment 1 in that: the step-by-step time-sharing heating polymerization is to heat at 45 ℃ for 55min, 55 ℃ for 85min, 65 ℃ for 95min, 75 ℃ for 25min, 145 ℃ for 35min, 170 ℃ for 10min, 175 ℃ for 20min and 215 ℃ for 5min in sequence.
Example 3
The present embodiment is different from embodiment 1 in that: the step-by-step time-sharing heating polymerization refers to heating at 35 ℃ for 65min, 45 ℃ for 95min, 55 ℃ for 85min, 65 ℃ for 35min, 155 ℃ for 25min, 160 ℃ for 20min, 185 ℃ for 10min and 205 ℃ for 10min in sequence.
Example 4
The present embodiment is different from embodiment 1 in that: (4) impregnation of the dispersion liquid: soaking the core bag in the step (3) in an oxidant solution, and drying; ② impregnation monomer.
Example 5
The present embodiment is different from embodiment 1 in that: (4) impregnation of the dispersion liquid: and (4) impregnating the core bag in the step (3) into a mixed solution of an oxidant and a monomer.
Comparative example 1
This comparative example differs from example 1 in that: the step-by-step time-sharing heating polymerization refers to heating at 40 ℃ for 70min, heating at 50 ℃ for 100min, heating at 70 ℃ for 70min, heating at 105 ℃ for 70min, heating at 150 ℃ for 50min, heating at 180 ℃ for 50min, and heating at 210 ℃ for 35min in sequence, wherein the total polymerization time is 445 min.
Comparative example 2
This comparative example differs from example 1 in that: the step-by-step time-sharing heating polymerization refers to heating at 40 ℃ for 70min, heating at 50 ℃ for 100min, heating at 70 ℃ for 70min, heating at 105 ℃ for 70min, heating at 150 ℃ for 50min, heating at 165 ℃ for 15min, and heating at 210 ℃ for 10min in sequence, wherein the polymerization time is 385min in total.
Comparative example 3
This comparative example differs from example 1 in that: the step-by-step time-sharing heating polymerization refers to heating at 40 ℃ for 70min, heating at 50 ℃ for 100min, heating at 70 ℃ for 70min, heating at 105 ℃ for 70min, heating at 150 ℃ for 50min, heating at 165 ℃ for 15min, adding at 180 ℃ for 15min, and heating at 210 ℃ for 10min in sequence, wherein the polymerization time is 400min in total.
The electrical properties of example 1 and comparative examples 1 to 3 were measured, and the results are shown in Table 1.
| TABLE 1 | Example 1 | Example 1 | Example 1 | Comparative example 1 | Comparative example 1 | Comparative example 1 | Comparative example 2 | Comparative example 2 | Comparative example 2 | Comparative example 3 | Comparative example 3 | Comparative example 3 |
| NO. | CAP (μF) | DF (%) | ESR (mΩ) | CAP (μF) | DF (%) | ESR (mΩ) | CAP (μF) | DF (%) | ESR (mΩ) | CAP (μF) | DF (%) | ESR (mΩ) |
| 1 | 219.50 | 4.10 | 15.40 | 143.80 | 6.51 | 18.44 | 166.65 | 5.21 | 16.92 | 200.23 | 5.21 | 16.42 |
| 2 | 218.30 | 4.32 | 15.02 | 145.20 | 6.47 | 17.85 | 188.30 | 5.48 | 17.58 | 205.65 | 5.32 | 15.95 |
| 3 | 217.50 | 4.39 | 15.07 | 141.80 | 6.36 | 17.47 | 178.60 | 5.32 | 17.12 | 206.72 | 5.10 | 16.85 |
| 4 | 216.60 | 4.32 | 16.05 | 143.80 | 6.64 | 17.87 | 186.60 | 5.61 | 16.75 | 205.24 | 5.12 | 16.78 |
| 5 | 217.60 | 4.40 | 14.84 | 142.90 | 6.36 | 17.51 | 187.20 | 5.30 | 17.51 | 204.32 | 5.24 | 17.20 |
| 6 | 216.50 | 4.32 | 14.38 | 148.50 | 6.48 | 17.39 | 186.50 | 6.02 | 17.65 | 203.54 | 5.32 | 16.54 |
| 7 | 213.70 | 4.52 | 14.43 | 143.20 | 6.63 | 17.75 | 189.30 | 5.54 | 16.69 | 205.42 | 5.54 | 16.85 |
| 8 | 214.50 | 4.53 | 15.11 | 147.90 | 7.08 | 17.21 | 187.53 | 5.63 | 17.54 | 206.42 | 5.42 | 17.02 |
| 9 | 213.70 | 4.83 | 14.59 | 145.80 | 7.05 | 17.15 | 179.65 | 5.87 | 18.21 | 201.54 | 5.36 | 16.97 |
| 10 | 210.90 | 5.13 | 14.84 | 141.20 | 6.05 | 21.61 | 187.35 | 6.13 | 18.42 | 203.65 | 5.03 | 17.03 |
| MAX | 219.50 | 5.13 | 16.05 | 148.50 | 7.08 | 21.61 | 189.30 | 6.13 | 18.42 | 206.72 | 5.54 | 17.20 |
| MIN | 210.90 | 4.10 | 14.38 | 141.20 | 6.05 | 17.15 | 166.65 | 5.21 | 16.69 | 200.23 | 5.03 | 15.95 |
| Mean value of | 215.88 | 4.49 | 14.97 | 144.41 | 6.56 | 18.03 | 183.77 | 5.61 | 17.44 | 204.27 | 5.27 | 16.76 |
In the conventional technology of SMD solid state capacitors, when the polymerization time of each temperature stage is designed to be short, the polymerization time is too short (less than 30 min), so that the polymerization reaction enters the next higher temperature stage without being slowed down to a certain extent, and the reaction is too violent to effectively generate polymer in an ideal state; and too long (longer than 120 min) polymerization time reduces production efficiency and increases production cost. However, the inventors have unexpectedly found that long-term polymerization (30 to 90 min) is performed in a low-temperature zone (35 to 75 ℃) and short-term polymerization (5 to 30 min) is performed in a high-temperature zone (145 to 215 ℃), and the low-temperature zone and the high-temperature zone are directly raised from the low-temperature zone to the high-temperature zone in a cross-over manner without setting the medium-temperature zone (85 to 140 ℃), and electrical property tests show that (comparative example 1 is an embodiment of conventional art for designing the length of the step polymerization time in the field, comparative examples 2 and 3 are long-term polymerization to short-term polymerization only by adjusting the high-temperature zone on the basis of comparative example 1), that table 1 shows that only long-term polymerization in the high-temperature zone is modified to short-term polymerization to improve the electrostatic capacity to a certain extent, but the improvements of the DF value and the ESR are not significant, and after the present invention is used, the electrostatic capacity is improved by 49.49%, the DF value is reduced by 31.65% and the ESR is reduced by 16.93%, the three electrical properties are obviously improved, the total polymerization time is obviously shortened, and unexpected technical effects are obtained under the condition of not following the conventional design, namely, the invention achieves the purpose of polymerization under the condition of meeting the test requirements (high-temperature reflow soldering requirements) of SMD products and obtains better characteristic parameters.
The above-mentioned embodiments only express the embodiments of the present invention, and the description is more specific and detailed, but not understood as the limitation of the patent scope of the present invention, but all the technical solutions obtained by using the equivalent substitution or the equivalent transformation should fall within the protection scope of the present invention.
Claims (10)
1. A method of manufacturing an SMD solid state capacitor, comprising the steps of: forming a core package by the anode foil, the cathode foil and the electrolytic paper; then carrying out impregnation treatment on the core bag by using dispersion liquid; polymerizing by heating in a time-sharing manner in stages to form a conductive polymer within the core package; assembling the polymerized core package, sealing, and aging; wherein the content of the first and second substances,
the step-by-step time-sharing heating polymerization is to heat for 55-65 min at 35-45 ℃, 85-95 min at 45-55 ℃, 85-95 min at 55-65 ℃, 25-35 min at 65-75 ℃, 25-35 min at 145-155 ℃, 10-20 min at 160-170 ℃, 10-20 min at 175-185 ℃ and 5-15 min at 205-215 ℃ in sequence.
2. The method of claim 1, wherein the step-wise time-division heating polymerization is sequentially heating at 40 ℃ for 60min, 50 ℃ for 90min, 60 ℃ for 90min, 70 ℃ for 30min, 150 ℃ for 30min, 165 ℃ for 15min, 180 ℃ for 15min, and 210 ℃ for 10 min.
3. The method of manufacturing an SMD solid capacitor as claimed in claim 1, further comprising a pre-impregnation treatment step before the core pack is impregnated with the monomer.
4. The method for manufacturing an SMD solid capacitor as claimed in claim 3, wherein the pretreatment agent is a mixed solution of a surfactant and a silane coupling agent.
5. The method as claimed in claim 3 or 4, wherein the step of pre-impregnation treatment further comprises chemical treatment of the core package to repair the oxide film on the surface of the anode foil.
6. The method for manufacturing an SMD solid capacitor as claimed in claim 1, wherein said dispersion is impregnated with a monomer dispersion alone and an oxidant dispersion alone.
7. The method for manufacturing an SMD solid capacitor as claimed in claim 1, wherein the order of the impregnated monomer dispersion and the impregnated oxidant dispersion is not limited.
8. The method for manufacturing SMD solid capacitor as claimed in claim 1, wherein the dispersion is a mixed solution of a monomer and an oxidizer.
9. The method for manufacturing SMD solid state capacitors of claim 1 wherein said monomer is a 3, 4-ethylenedioxythiophene solution; the oxidant solution is one or more selected from p-toluenesulfonic acid, sodium p-toluenesulfonate, iron p-toluenesulfonate and ammonium p-toluenesulfonate.
10. SMD solid state capacitor, characterized in that it is manufactured by a manufacturing method according to any one of claims 1 to 9.
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| US20060279909A1 (en) * | 2005-06-09 | 2006-12-14 | Kee Lik W | Solid electrolytic capacitor and manufacturing method thereof |
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| CN113972072A (en) * | 2021-11-05 | 2022-01-25 | 肇庆绿宝石电子科技股份有限公司 | 16V solid-state capacitor and manufacturing method thereof |
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