CN116247017A - Diamond substrate sp 3 -sp 2 Preparation method and application of hybrid bond network layer - Google Patents
Diamond substrate sp 3 -sp 2 Preparation method and application of hybrid bond network layer Download PDFInfo
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
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Abstract
The invention discloses a diamond substrate sp 3 ‑sp 2 A preparation method and application of a hybrid bond network layer relate to the technical field of semiconductor technology, and the technical scheme is as follows: the diamond substrate sp 3 ‑sp 2 The hybrid bond network layer comprises a single crystal diamond surface layer sp 3 Conversion of structural carbon to sp 2 And sp (sp) 3 Covalently bonded hybrid bond hybrid carbon atom layers having an existing sp 3 Having a structure with sp 2 The structure is a mixed bond carbon structure, the diamond sp 3 ‑sp 2 The hybridization network layer and the diamond have a tight chemical bond bonding effect, and the hybridization layer cannot fall off or be damaged even if ultrasonic cleaning and stress are met. The invention is thatThe preparation method of the III-V semiconductor heterojunction interface can improve the bonding strength of the diamond III-V semiconductor heterojunction interface, reduce the interface thermal resistance and improve the epitaxial quality of the III-V semiconductor, and provides a good foundation for the preparation of subsequent transistors.
Description
Technical Field
The invention relates to the technical field of III-V semiconductor process, in particular to a diamond substrate sp 3 -sp 2 A preparation method and application of a hybrid bond network layer.
Background
III-V semiconductors are binary compounds composed of elements of groups IIIA and VA, the chemical ratio of the components of which is 1:1. It comprises the following compounds: BN, BP, BAs, alN, alP, alAs, alSb, gaN, gaP, gaAs, gaSb, inN, inP, inAs, inSb. The second generation semiconductor material is mainly gallium arsenide (GaAs), indium antimonide (InSb) and the like, and the indium phosphide semiconductor laser is a key device of an optical communication system, so that the gallium arsenide high-speed device further exploits new industries of optical fibers and mobile communication. The development of semiconductor lighting, display, electric automobile and other industries is effectively promoted by the third generation of semiconductor materials typified by gallium nitride (GaN). The second-generation semiconductor material is stronger than the silicon material device in three indexes of electron mobility, saturation drift rate and forbidden bandwidth. Among them, the most attractive is the "Wide Band-Gap (WBG)" of the third generation semiconductors. The Gao Jindai width device has the advantages of high voltage resistance, high temperature resistance, high power, radiation resistance, high conductivity, high working speed and low working loss. The III-V semiconductor is very suitable for preparing high-temperature high-frequency high-power devices due to the unique physical advantages of the III-V semiconductor, and the III-V semiconductor is also applied to the aspects of communication systems, precision guidance, radars, electronic warfare systems and the like in the national defense field. In the civil commercial field, III-V semiconductor devices are mainly used in communication systems, automotive electronics, and electric energy conversion, etc. due to their excellent microwave power characteristics. With the increasing power of III-V semiconductor power devices, the self-heating effect of the devices is more obvious, and the existing device structure cannot effectively dissipate heat in time, so that the junction temperature of the devices can be increased rapidly. The increase in the junction temperature of the device can lead to rapid deterioration of the output power density, efficiency and other performances of the device, which has become a bottleneck for preventing the development of III-V semiconductor microwave power devices. Transferring heat generated by III-V semiconductor devices away requires heat reduction by structural designAnd the heat conduction between the device and the substrate is generated and improved, the substrate with excellent heat conduction performance is selected, and the packaging material with excellent heat conduction performance is selected. Although packaging heat dissipation techniques can alleviate the heat dissipation problem of the device to some extent, the heat dissipation problem of III-V semiconductor devices needs to be fundamentally solved starting from the internal structure of the device. The heat dissipation of the internal device is improved by the following steps: first, a substrate excellent in heat conduction property is selected to promote heat dissipation, and a silicon (Si) substrate, a sapphire substrate, a silicon carbide (SiC) substrate, or the like is generally selected for a III-V semiconductor device. However, the heat conductivity of the substrates such as sapphire and silicon carbide is not superior to that of the most excellent diamond substrate. Single crystal diamond has many excellent properties, and its thermal conductivity is about 2000 W.m higher -1 ·K -1 The highest thermal conductivity of the currently known natural substances is 4-5 times that of copper and silver, and 4 times that of silicon carbide. Therefore, the traditional substrate material of the III-V semiconductor base device is replaced by diamond, so that the heat dissipation requirement of the device can be effectively met, the performance of the III-V semiconductor device can be effectively improved, the service life can be prolonged, and the reliability of the device can be improved. Secondly, diamond substrates have been chosen but the problem of device heat dissipation has not been solved if the heat on the III-V semiconductor device is not transferred to the substrate, so many researchers have often chosen to introduce a buffer layer on the substrate to solve this problem, for example, by introducing a zinc oxide buffer layer after the sapphire substrate is subjected to a corrosion treatment, or by adding an aluminum nitride buffer layer on a silicon carbide substrate, etc. The introduction of a buffer layer to reduce interface thermal resistance is a key to solve the problem of heat dissipation of III-V semiconductor devices.
In the research of introducing a buffer layer into a diamond and III-V semiconductor device for solving the problem of heat dissipation of the device, more technologies are studied, namely the prepared III-V semiconductor device is peeled off from an original substrate and is transferred and bonded onto a diamond substrate, and the technology is simple and mature, but is limited by the problems of high processing difficulty and high roughness of polycrystalline diamond, so that the transfer bonding is difficult to realize, and the thermal resistance of a transfer bonding layer is also high. Meanwhile, directly extending diamond on III-V semiconductor is one of the methods for solving the heat dissipation of diamond and III-V semiconductor material, but the diamond growth requires high temperature,The strong plasma has influence on the performance of the III-IV semiconductor, and meanwhile, the grown III-IV semiconductor and the diamond intermediate have the problems of lattice mismatch, large thermal mismatch and the like, so that the heterointegration epitaxy of the diamond and the III-V semiconductor material is difficult to realize. In contrast to the above invention, the present invention forms a layer of sp on a diamond substrate 3 -sp 2 The hybrid bond network can solve the heat dissipation problem of the device and the lattice adaptation problem of the epitaxial III-IV semiconductor on the substrate, and improve the epitaxial quality of the III-IV semiconductor, thereby improving the overall performance of the III-IV semiconductor device.
Disclosure of Invention
The object of the present invention is to provide a diamond substrate sp 3 -sp 2 The preparation method and the application of the hybrid bond network layer can improve the heterogeneous interface bonding strength of the diamond III-V semiconductor, reduce interface thermal resistance and improve the epitaxial quality of the III-V semiconductor, and provide a good foundation for the preparation of subsequent devices.
The technical purpose of the invention is realized by the following technical scheme: diamond substrate sp 3 -sp 2 A hybrid bond network layer, the diamond substrate sp 3 -sp 2 The hybrid bond network layer comprises a single crystal diamond surface layer sp 3 Conversion of structural carbon to sp 2 And sp (sp) 3 Covalently bonded hybrid bond hybrid carbon atom layers having an existing sp 3 Having a structure with sp 2 The mixture of structures forms a bonded carbon structure.
Diamond substrate sp 3 -sp 2 The preparation method of the hybrid bond network layer comprises the following steps: cutting diamond into slices, polishing, removing surface pollutants, cleaning, placing cleaned diamond on the surface of catalytic metal foil, compacting with high temperature resistant material to make polished diamond surface fully contact with copper, placing into a tube furnace, and introducing H 2 Mixing with argon gas to protect gas, heating to reaction temperature, maintaining for a certain period, cooling to form mixed bond hybridized carbon atom layer on the diamond surface, immersing in etching solution to remove mixed bond hybridized carbon atom layerMetal residue on the surface of the carbon atomic layer to obtain diamond sp 3 -sp 2 And (3) a hybrid network layer.
The invention is further provided with: the etching solution is typically a hydrochloric acid solution.
The invention is further provided with: polishing by a polishing instrument and polishing solution, immersing in a mixed solution of sulfuric acid and hydrogen peroxide to remove surface pollutants, and then ultrasonically cleaning in deionized water and ethanol.
The invention is further provided with: the thickness of the diamond sheet layer is 0.2-2mm; the thickness of the metal foil is 1-5 mu m; the diamond sp 3 -sp 2 The thickness of the hybrid network layer is 0.2-10nm.
The invention is further provided with: will have sp 3 -sp 2 Sequentially placing the diamond substrate of the hybridization network layer into trichloroethylene solution, MOS-grade acetone solution and MOS-grade alcohol solution to remove surface organic matter pollution and particle impurities, and then washing with deionized water to remove alcohol residues and N 2 Blow drying, then placing into hydrochloric acid solution to remove surface metal ions and oxide film, and performing ultrasonic treatment in deionized water solution to obtain N 2 Blow-drying, and drying on a hot plate for standby.
Diamond substrate sp 3 -sp 2 The preparation method of the hybrid bond network layer comprises the following steps: or slicing diamond, polishing, removing surface pollutant, cleaning, placing cleaned diamond at laser outlet, and making pure diamond undergo the process of laser irradiation reaction to obtain diamond sp 3 -sp 2 Hybrid network layer micro-nano structure.
Diamond substrate sp 3 -sp 2 Application of hybrid bond network layer: bonding the diamond sp 3 -sp 2 The hybrid network layer is applied to III-V semiconductor devices.
The invention is further provided with: the III-V semiconductor device with the diamond with the hybrid mixed bond network layer as the substrate is widely applied to radio frequency HEMT devices, switch transistor devices and LED devices.
In summary, the invention has the following beneficial effects:
1. the preparation method can simultaneously improve the heterogeneous interface bonding strength of the diamond III-V semiconductor, reduce interface thermal resistance and improve the epitaxial quality of the III-V semiconductor.
2. The invention adopts a metal catalysis method and a laser conversion method to effectively improve sp on the diamond matrix 3 -sp 2 The growth efficiency and quality of the hybridization network layer realize the sp of the whole diamond surface 3 -sp 2 Hybrid network reaction layer formation, ensure sp 3 -sp 2 The hybrid network layer is more strongly bonded to diamond by chemical bonds. Thus sp 3 -sp 2 The excellent property of the hybrid network layer can be stored on the substrate for a long time, so that the prepared electronic device has longer service life and more stable performance.
3. The invention forms two-dimensional sp on the diamond surface by changing the crystal face, the crystal surface roughness and the experimental conditions of the diamond 3 -sp 2 Hybrid network layer will have sp 3 -sp 2 The diamond of the hybridized network layer is used as a substrate, and then a III-V semiconductor heterostructure is successfully grown on the substrate by adopting a molecular epitaxy technology, so that the key film growth technology and application of the III-V semiconductor material are developed and breakthroughs are achieved.
4. By having sp 3 -sp 2 The diamond substrate heteroepitaxy III-V semiconductor material of the hybrid network layer can be used for preparing novel devices such as radio frequency HEMT devices, switch transistor devices, LEDs and the like.
5. The invention has important significance for improving the quality of heteroepitaxial III-V semiconductor materials and promoting the development of high-frequency and high-power density III-V semiconductor devices.
Drawings
FIGS. 1 (a-c) are diamond before polishing, diamond after polishing and sp on the diamond surface after reaction 3 -sp 2 White light diffraction pictures of the hybrid network layer; (d) Having sp after polishing 3 -sp 2 Raman curve of diamond of the hybrid network layer.
FIG. 2 has sp 3 -sp 2 SEM image of diamond of the hybrid network layer;
FIG. 3 has sp after polishing 3 -sp 2 XPS map of diamond of the hybrid network layer;
FIG. 4 is a schematic diagram of a GaN/AlGaN high electron mobility RF transistor according to the present invention;
fig. 5 is an XRD pattern of the irradiated diamond.
Detailed Description
The invention is described in further detail below with reference to fig. 1-5.
Example 1: diamond substrate sp 3 -sp 2 A hybrid bond network layer, the diamond substrate sp 3 -sp 2 The hybrid bond network layer comprises a single crystal diamond surface layer sp 3 Conversion of structural carbon to sp 2 And sp (sp) 3 Covalently bonded hybrid bond hybrid carbon atom layers having an existing sp 3 Having a structure with sp 2 The structure is a mixed bond carbon structure, the diamond sp 3 -sp 2 The hybridization network layer and the diamond have a tight chemical bond bonding effect, and the hybridization layer cannot fall off or be damaged even if ultrasonic cleaning and stress are met.
Diamond substrate sp 3 -sp 2 The preparation method of the hybrid bond network layer comprises cutting diamond into slices, polishing, removing surface pollutants, cleaning, placing cleaned diamond on the surface of pure Cu foil, placing polished diamond surface into a tube furnace in contact with copper, and introducing H 2 Mixing the diamond with argon gas to form protective gas, wherein the volume ratio of the hydrogen gas to the argon gas is 2:8, heating to 1080-1200 ℃ at the speed of 5-20 ℃/min, preserving heat for 5-40min, and rapidly cooling to form sp on the diamond surface 3 -sp 2 Hybridization of the network layer followed by immersion in an etching solution to remove sp 3 -sp 2 Cu residue on the surface of the hybrid network layer; immersing the reacted diamond in an etching solution to remove sp 3 -sp 2 Cu residue on the surface of the hybrid network layer; cleaning has sp 3 -sp 2 A diamond substrate of a hybrid network layer;cleaning to remove surface organic contamination and particulate impurities.
Diamond substrate sp 3 -sp 2 Use of hybrid bond network layers to have sp 3 -sp 2 The diamond of the hybridization network layer is a substrate heteroepitaxy III-V semiconductor, and the III-V semiconductor device with the diamond of the hybridization mixed bonding network layer as the substrate is widely applied to radio frequency and microwave HEMT devices, switch transistor devices, LEDs and the like.
Further, the etching solution is prepared as CuSO 4 :HCl:H 2 O=1 g:50ml configuration.
Further, polishing is carried out by adopting a polishing instrument and polishing solution, surface pollutants are removed by soaking in a mixed solution of sulfuric acid and hydrogen peroxide, and then ultrasonic cleaning is carried out in deionized water and ethanol.
Further, the thickness of the diamond sheet is 1-3mm; the thickness of the Cu foil is 1-5 mu m; the diamond sp 3 -sp 2 The thickness of the hybrid network layer is 2-10nm.
Further, will have sp 3 -sp 2 Sequentially placing the diamond substrate of the hybridization network layer into trichloroethylene solution, MOS-grade acetone solution and MOS-grade alcohol solution to remove surface organic matter pollution and particle impurities, and then washing with deionized water to remove alcohol residues and N 2 Blow drying, then placing into hydrochloric acid solution to remove surface metal ions and oxide film, and performing ultrasonic treatment in deionized water solution to obtain N 2 Blow-drying, and drying on a hot plate for standby.
Example 2: diamond substrate sp 3 -sp 2 The preparation method of the hybrid bond network layer can also cut the diamond into slices, then polish, remove surface pollutants and clean the diamond, then place the cleaned diamond at the light outlet of the laser, and prepare diamond sp by the laser 3 -sp 2 Hybrid network layer micro-nano structure: the laser center wavelength is 266nm, the frequency range is 1-10Hz, the maximum single pulse energy is 2mJ-2J, and the irradiation time is 10-360min.
Working principle: the present invention relates to two diamond substrates sp 3 -sp 2 The preparation method of the hybrid bond network layer comprises a metal catalysis method and a laser conversion method. The following are specific experimental steps of two preparation methods, and in addition, in order to study the prepared diamond substrate sp 3 -sp 2 The hybrid bond network layer has a range of applications and some related tests have been performed.
Metal catalysis method:
the first step: preparation of a polypeptide having sp 3 -sp 2 Diamond substrate of hybrid network layer:
(1) Cutting the diamond, and cutting the diamond into sheet layers according to the (001) crystal face, wherein the size of the diamond sheet is 10 x 2mm;
(2) Polishing the surface of the diamond by adopting a polishing instrument with the pressure of 5N and a diamond polishing solution, wherein the polishing time is 4 hours;
(3) Immersing the polished diamond substrate in sulfuric acid and hydrogen peroxide (H) at 80 DEG C 2 SO 4 :H 2 O 2 =2 ml:1 ml) in solution for 4h to remove surface contaminants;
(4) Ultrasonically cleaning the diamond with the surface pollutants removed in deionized water and ethanol for 10min respectively;
(5) Placing cleaned diamond on a silicon carbide chip, placing pure Cu foil on the diamond, pressing with titanium block, placing polished diamond face into tubular furnace with sufficient copper contact, placing polished diamond face into tubular furnace with copper contact, introducing H 2 Mixing the diamond with argon gas to form protective gas (the volume ratio of hydrogen to argon is 2:8), heating to 1100 ℃ at the speed of 10 ℃/min, preserving heat for 30min, and rapidly cooling to form sp on the surface of the diamond 3 -sp 2 A hybrid network layer;
(6) The sp is obtained after the reaction 3 -sp 2 The diamond sample of the hybrid network layer was immersed in an etching solution (CuSO 4 :HCl:H 2 O=1 g:50 ml) to remove sp 3 -sp 2 Cu residue on the surface of the hybrid network layer;
and a second step of: cleaning has sp 3 -sp 2 Diamond substrate of hybrid network layer:
(1) Will have sp 3 -sp 2 Placing the diamond substrate of the hybridization network layer into a trichloroethylene solution for ultrasonic treatment for 5min (the ultrasonic frequency is 37 Hz) to remove surface organic matter pollution and particle impurities;
(2) Will have sp 3 -sp 2 Placing the diamond substrate of the hybridization network layer into MOS-grade acetone solution for ultrasonic treatment for 5min, removing the trichloroethylene solution remained on the surface and further removing the remained organic impurities;
(3) Will have sp 3 -sp 2 Placing the diamond substrate of the hybridization network layer into MOS-grade alcohol solution, performing ultrasonic treatment (ultrasonic frequency is 37 Hz) for 5min, removing residual acetone solution, washing with deionized water to remove alcohol residue, and removing N 2 Blow-drying;
(4) Will N 2 Having sp after blow-drying 3 -sp 2 The diamond substrate of the hybridization network layer is put into HCI to H 2 In addition, the HCI solution can reduce the residual quantity of surface oxygen element to be very low, and the dilute HCI solution is not so high in corrosiveness and cannot have sp 3 -sp 2 The diamond substrate of the hybridized network layer is obviously damaged;
(5) Will have sp 3 -sp 2 The diamond sheet of the hybrid network layer was placed in deionized water solution and sonicated for 3min using N 2 Blow-drying, and drying at 180 ℃ on a hot plate for standby;
laser conversion method:
the first step: preparation of a polypeptide having sp 3 -sp 2 Diamond substrate of hybrid network layer:
(1) Cutting the diamond, and cutting the diamond into sheet layers according to the (001) crystal face, wherein the size of the diamond sheet is 10 x 2mm;
(2) Polishing the surface of the diamond by adopting a polishing instrument with the pressure of 5N and a diamond polishing solution, wherein the polishing time is 4 hours;
(3) Immersing the polished diamond substrate in sulfuric acid and hydrogen peroxide (H) at 80 DEG C 2 SO 4 :H 2 O 2 =2 ml:1 ml) in solution for 4h to remove surface contaminants;
(4) Ultrasonically cleaning the diamond with the surface pollutants removed in deionized water and ethanol for 10min respectively;
(5) Placing the cleaned diamond in a manner of cutting the diamond into slices, polishing, removing surface pollutants and cleaning, and preparing diamond sp by using a laser 3 -sp 2 Hybrid network layer micro-nano structure: the laser center wavelength is 266nm, the frequency is 30Hz, the single pulse energy is 2mJ, and the irradiation time is 30min. XRD characterization of irradiated diamond as shown in FIG. 5, from which it is demonstrated that sp is achieved 3 -sp 2 Preparation of a hybrid network layer.
Preparation of HEMT transistor device:
the first step: preparing a heterojunction: having sp by metal organic chemical vapor deposition 3 -sp 2 Growing two layers of GaN and AlGaN on the diamond sheet substrate of the hybrid network layer to form a GaN/AlGaN heterojunction, wherein the thickness range is 2-10 mu m;
cleaning the obtained diamond-based GaN/AlGaN heterojunction sample according to the previous steps;
manufacturing a mask plate by adopting quartz glass;
and a second step of: photoetching: firstly, uniformly coating photoresist on the surface of a cleaned sample by adopting a rotary covering method, carrying out soft baking on the sample with photoresist by utilizing centrifugal force of high-speed rotation, removing residual solvent in the photoresist, exposing a pattern on a mask plate on the sample by adopting an alignment exposure method, and finally removing unnecessary photoresist by adopting a developing solution to enable the pattern to be displayed;
and a third step of: ohmic contact: the typical Ti/Al/Ni/Au four-layer alloy structure is adopted, and the electron beam evaporation mode is utilized for metal deposition, and the thickness of each layer of metal is 22nm/140nm/55nm/45nm in sequence. In the evaporation process, the metal evaporation rate is properly adjusted according to the evaporation thickness, after all metals are evaporated, the metals are put into a metal stripping liquid for stripping, so that an ohmic contact pattern is formed, and finally, high-temperature annealing is carried out in a rapid annealing furnace for 30 seconds in a high-temperature environment at 830 ℃ to form ohmic contact with good performance.
Fourth step: device for preventing and treating cancerPiece isolation: the RIE reactive ion etching method is adopted, and the etching gas used is Cl 2 ，Cl 2 The flow is controlled at 15sccm, the cavity pressure is 10mTorr, the etching power is 50W, the etching time is 2.5min, and meanwhile, the etching depth is 120nm in order to ensure that the conducting channel can be completely isolated.
Fifth step: passivation deposition: the passivation layer growth is performed by plasma chemical vapor deposition, PECVD. In this experiment, the nitrogen (N) source was provided by ammonia (NH 3), the silicon source was provided by silane (SiH 4), and the gas flow ratio was set to SiH 4 :NH 3 =2:1, set pressure 600mTorr, temperature 250 ℃, power 22W, si by PECVD method 3 N 4 And (5) depositing a passivation layer. The passivation is divided into two steps, the passivation film of the first layer is thinner and has the thickness
The method is mainly used for passivating the surface of the barrier layer and is completed before gate trench etching. The second passivation layer is thicker, +.>
The method is used for weakening the influence of the ambient atmosphere on the device, realizing the protection of the device and being carried out after the gate metal deposition is completed. After deposition is completed, the quality of the passivation layer can be evaluated by ellipsometry, and the detection content mainly comprises Si 3 N 4 The refractive index, growth thickness and leakage of the layers are such that these parameters are within preset values to achieve the desired device performance.
Sixth step: gate formation: and (3) carrying out groove gate etching by adopting an over-etching method, wherein the corresponding etching conditions are as follows: the radio frequency power is 50W, and the etching gas adopts CF 4 And O 2 The corresponding gas flow rates are 20sccm and 2sccm respectively, and the gas pressure is controlled at 5mTorr. The interconnect openings are still F-based etched, and to increase etch rate, CF 4 And O 2 The flow rate of (2) was increased to 45sccm and 5sccm, respectively, the pressure was 10mTorr, and the etching time was set to 180s. Then evaporating gate metal by electron beam evaporation, wherein the evaporated metal structure is Ni/Au alloy with thickness of
The Ni material is used as the bottom metal of the gate metal electrode, so that the gate metal and the AlGaN barrier layer can be guaranteed to have good adhesion. Au is typically used for the second metal layer, mainly because Au has a work function as high as 5.1eV, which results in a schottky gate with very good rectifying characteristics.
Seventh step: interconnection: because the passivation needs to be carried out after the gate metal deposition is finished, and the whole wafer is covered by the passivation layer, before the electrode is led out, interconnection open pore etching is firstly carried out on the passivation film above the electrode position, and specific etching conditions adopted in the experiment are the same as those adopted in the etching of the gate groove. After the opening etching is completed, the following evaporation of the interconnect metal is performed, and here we still use a typical Ti/Au alloy structure, the evaporated metal thicknesses are respectively
And->
Finally obtain the product with sp 3 -sp 2 The diamond of the hybrid network layer is a GaN/AlGaN high electron mobility radio frequency transistor of the substrate, and the schematic diagram is shown in the following FIG. 2.
It can be seen from FIG. 1 that the roughness of the diamond after polishing is significantly reduced, and that the surface of the diamond after reaction is uniformly sp 3 -sp 2 The hybridization network layer also determines that sp is generated on the diamond surface through Raman curve 3 -sp 2 A hybrid network layer because of the apparent sp on the Raman curve 2 Structural carbon characteristic peak.
The present embodiment is only for explanation of the present invention and is not to be construed as limiting the present invention, and modifications to the present embodiment, which may not creatively contribute to the present invention as required by those skilled in the art after reading the present specification, are all protected by patent laws within the scope of claims of the present invention.
Claims (6)
1. Diamond substrate sp 3 -sp 2 The hybrid bond network layer is characterized in that: the diamond substrate sp 3 -sp 2 The hybrid bond network layer comprises a single crystal diamond surface layer sp 3 Conversion of structural carbon to sp 2 And sp (sp) 3 Covalently bonded hybrid bond hybrid carbon atom layers that are incumbent sp 3 Having a structure with sp 2 The mixture of structures forms a bonded carbon structure.
2. Diamond substrate sp 3 -sp 2 The preparation method of the hybrid bond network layer is characterized by comprising the following steps: cutting diamond into slices, polishing, removing surface pollutants, cleaning, placing cleaned diamond on the surface of metal foil such as catalyst copper-nickel, compacting with high temperature resistant material to make polished diamond surface fully contact with catalytic metal, placing into a tube furnace, introducing H 2 And argon gas to react for a certain time after the temperature is quickly raised to the reaction temperature, and quickly cooling to form a hybrid bond hybrid carbon atom layer on the surface of the diamond, and then immersing the diamond into an etching solution to remove metal residues on the surface of the hybrid bond hybrid carbon atom layer to obtain the diamond with sp 3 -sp 2 Diamond of the hybrid network layer.
3. Diamond substrate sp 3 -sp 2 The preparation method of the hybrid bond network layer is characterized by comprising the following steps: or slicing diamond, polishing, removing surface pollutant, cleaning, placing cleaned diamond slice at laser exit position, and irradiating pure diamond laser to obtain surface with sp 3 -sp 2 Diamond with hybridized network layer micro-nano structure.
4. A diamond substrate sp according to any one of claims 2 or 3 3 -sp 2 The preparation method of the hybrid bond network layer is characterized by comprising the following steps:the thickness of the diamond sheet layer is 0.3-2mm; the diamond sp 3 -sp 2 The thickness of the hybrid network layer is 0.2-10nm.
5. Diamond substrate sp 3 -sp 2 The application of the hybrid bond network layer is characterized in that: the diamond sp 3 -sp 2 The hybrid network layer can improve the epitaxial quality of diamond and III-IV semiconductor and improve the heat dissipation problem of III-V semiconductor devices.
6. A diamond substrate sp according to claim 5 3 -sp 2 The application of the hybrid bond network layer is characterized in that: the III-V semiconductor device with the diamond with the hybridized bond network layer as the substrate is widely applied to radio frequency HEMT devices, microwave HEMT devices, switch transistor devices and LED devices.
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| CN202310064928.5A Pending CN116247017A (en) | 2023-02-06 | 2023-02-06 | Diamond substrate sp 3 -sp 2 Preparation method and application of hybrid bond network layer |
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| CN102593294A (en) * | 2012-03-15 | 2012-07-18 | 安徽三安光电有限公司 | Compound gallium nitride based semiconductor growing substrate and producing method thereof |
| CN112647063A (en) * | 2020-11-30 | 2021-04-13 | 天津职业技术师范大学(中国职业培训指导教师进修中心) | DLC-nano diamond composite coating preparation method based on laser irradiation |
| CN112647056A (en) * | 2020-12-01 | 2021-04-13 | 上海征世科技有限公司 | Diamond film based on nano particle modification and preparation method thereof |
| CN114645260A (en) * | 2022-03-10 | 2022-06-21 | 北京科技大学 | Preparation method of infrared anti-reflection high-conductivity diamond semiconductor |
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| CN102593294A (en) * | 2012-03-15 | 2012-07-18 | 安徽三安光电有限公司 | Compound gallium nitride based semiconductor growing substrate and producing method thereof |
| CN112647063A (en) * | 2020-11-30 | 2021-04-13 | 天津职业技术师范大学(中国职业培训指导教师进修中心) | DLC-nano diamond composite coating preparation method based on laser irradiation |
| CN112647056A (en) * | 2020-12-01 | 2021-04-13 | 上海征世科技有限公司 | Diamond film based on nano particle modification and preparation method thereof |
| CN114645260A (en) * | 2022-03-10 | 2022-06-21 | 北京科技大学 | Preparation method of infrared anti-reflection high-conductivity diamond semiconductor |
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