CN116246964A - Method for manufacturing wafer back adhesive layer - Google Patents
Method for manufacturing wafer back adhesive layer Download PDFInfo
- Publication number
- CN116246964A CN116246964A CN202310146544.8A CN202310146544A CN116246964A CN 116246964 A CN116246964 A CN 116246964A CN 202310146544 A CN202310146544 A CN 202310146544A CN 116246964 A CN116246964 A CN 116246964A
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- CN
- China
- Prior art keywords
- adhesive layer
- glue
- layer
- glue layer
- chip
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012790 adhesive layer Substances 0.000 title claims abstract description 107
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000003292 glue Substances 0.000 claims abstract description 65
- 239000010410 layer Substances 0.000 claims abstract description 64
- 230000001680 brushing effect Effects 0.000 claims abstract description 10
- 238000002844 melting Methods 0.000 claims abstract description 4
- 230000008018 melting Effects 0.000 claims abstract description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 14
- 239000010959 steel Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 abstract description 5
- 230000001070 adhesive effect Effects 0.000 abstract description 5
- 238000005520 cutting process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M1/00—Inking and printing with a printer's forme
- B41M1/26—Printing on other surfaces than ordinary paper
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
The invention relates to a method for manufacturing a wafer back adhesive layer, which comprises the following steps: brushing glue on the back surface of the wafer to form a first glue layer; solidifying the first glue layer; performing second glue brushing on the back surface of the wafer to form a second glue layer on the first glue layer; curing the second adhesive layer, wherein the curing temperature of the second adhesive layer is lower than that of the first adhesive layer; and when the chip is stuck, the second adhesive layer is subjected to hot melting to finish the sticking of the chip. According to the invention, two layers of adhesive layers are coated on the back surface of the wafer, the curing temperatures of the two layers of adhesive layers are different, the second adhesive layer can be controlled to melt while the first adhesive layer is not melted during the chip pasting, the second adhesive layer is utilized to complete the chip pasting, the total thickness of the adhesive layer on the chip after the chip pasting is controlled by utilizing the first adhesive layer, the adhesive thickness of the chip is ensured to meet the requirement, and the problem of bad batch is avoided.
Description
Technical Field
The invention relates to the technical field of semiconductor packaging, in particular to a method for manufacturing a wafer back adhesive layer.
Background
In a process of pasting a chip (DB) of a semiconductor device package, a glue layer is disposed on a back surface of the chip to paste the chip, a layer of glue with a thickness of 50um is coated on a back surface of a wafer, and the chip is placed into a chip mounter to be pasted after cutting.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, provides a manufacturing method of a wafer back adhesive layer, and solves the problem that the adhesive layer thickness is difficult to control in the existing adhesive bonding process, so that poor batch phenomenon is easy to occur.
The technical scheme for achieving the purpose is as follows:
the invention provides a method for manufacturing a wafer back adhesive layer, which comprises the following steps:
brushing glue on the back surface of the wafer to form a first glue layer;
solidifying the first glue layer;
performing second glue brushing on the back surface of the wafer to form a second glue layer on the first glue layer;
curing the second adhesive layer, wherein the curing temperature of the second adhesive layer is lower than that of the first adhesive layer; and
and when the chip is stuck, the second adhesive layer is subjected to hot melting to finish the sticking of the chip.
According to the invention, two layers of adhesive layers are coated on the back surface of the wafer, the curing temperatures of the two layers of adhesive layers are different, the second adhesive layer can be controlled to melt while the first adhesive layer is not melted during the chip pasting, the second adhesive layer is utilized to complete the chip pasting, the total thickness of the adhesive layer on the chip after the chip pasting is controlled by utilizing the first adhesive layer, the adhesive thickness of the chip is ensured to meet the requirement, and the problem of bad batch is avoided.
The manufacturing method of the wafer back adhesive layer is further improved in that after the surface mounting is finished, the chip is baked, and the baking temperature is higher than the curing temperature of the first adhesive layer.
The manufacturing method of the wafer back adhesive layer is further improved in that when the back of the wafer is brushed, a steel mesh is utilized for brushing the adhesive.
The manufacturing method of the wafer back adhesive layer is further improved in that the thickness of the formed adhesive layer is controlled through the thickness of the steel mesh, and the thickness of the steel mesh used by the first adhesive layer is larger than that of the steel mesh used by the second adhesive layer.
The manufacturing method of the wafer back adhesive layer is further improved in that when the first adhesive layer and the second adhesive layer are cured, the first adhesive layer and the second adhesive layer are baked at constant temperature by using an oven to realize curing.
The manufacturing method of the wafer back adhesive layer is further improved in that when the first adhesive layer and the second adhesive layer are baked at constant temperature, the baking time is set to be 30 minutes.
The manufacturing method of the wafer back adhesive layer is further improved in that the temperature of the second adhesive layer is higher than or equal to the curing temperature of the second adhesive layer and lower than the curing temperature of the first adhesive layer when the second adhesive layer is subjected to hot melting.
The manufacturing method of the wafer back adhesive layer is further improved in that the materials of the first adhesive layer and the second adhesive layer are the same.
The manufacturing method of the wafer back adhesive layer is further improved in that the curing temperature of the first adhesive layer is 140-150 ℃.
The manufacturing method of the wafer back adhesive layer is further improved in that the curing temperature of the second adhesive layer is between 120 ℃ and 130 ℃.
Drawings
Fig. 1 is a schematic structural diagram of a chip and a backside adhesive layer according to the present invention.
Fig. 2 is a flow chart of a method for manufacturing a wafer backside glue layer according to the present invention.
Detailed Description
The invention will be further described with reference to the drawings and the specific examples.
Referring to fig. 1, the invention provides a method for manufacturing a wafer back adhesive layer, which is used for controlling the thickness of the adhesive layer after bonding so as to avoid the problem of bad product batch caused by the fact that the thickness of the adhesive layer does not meet the requirement. The double-layer adhesive layer is manufactured on the back of the wafer, the curing temperatures of the two layers of adhesive layers are different, the adhesive layer on the upper part is melted during the surface mounting operation, and the thickness of the adhesive layer on the lower part is reserved, so that the quality of a product is ensured. The method for manufacturing the wafer back side adhesive layer of the invention is described below with reference to the accompanying drawings.
Referring to fig. 1, a schematic structure of a chip and a backside adhesive layer according to the present invention is shown. Referring to fig. 2, a flow chart of a method for manufacturing a wafer backside glue layer according to the present invention is shown. The method for manufacturing the wafer backside adhesive layer according to the present invention will be described with reference to fig. 1 and 2.
As shown in fig. 1 and 2, the method for manufacturing the wafer backside adhesive layer of the present invention includes the following steps:
step S11 is executed, in which the back surface of the wafer 21 is brushed to form a first adhesive layer 22; step S12 is then performed;
step S12 is executed to cure the first adhesive layer 22; step S13 is then executed;
step S13 is executed, in which a second glue brushing is performed on the back surface of the wafer 21 to form a second glue layer 23 on the first glue layer 22; step S14 is then performed;
step S14 is executed to cure the second adhesive layer 23, and the curing temperature of the second adhesive layer 23 is lower than the curing temperature of the first adhesive layer 22; step S15 is then executed;
step S15 is executed, in which the second adhesive layer 23 is thermally melted to complete the chip attachment during the chip attachment.
According to the invention, two layers of adhesive layers are coated on the back surface of the wafer, the curing temperatures of the two layers of adhesive layers are different, the second adhesive layer can be controlled to melt while the first adhesive layer is not melted during the chip pasting, the second adhesive layer is utilized to complete the chip pasting, the total thickness of the adhesive layer on the chip after the chip pasting is controlled by utilizing the first adhesive layer, the adhesive thickness of the chip is ensured to meet the requirement, and the problem of bad batch is avoided.
In one embodiment of the present invention, after the die attachment is completed, the die is baked at a temperature above the curing temperature of the first adhesive layer 22.
The first adhesive layer 22 and the second adhesive layer 23 can be integrated by baking after the bonding, and the baking is not performed by pressing or the like because the chip bonding is completed, so that the overall thickness of the first adhesive layer and the second adhesive layer is less, and the overall thickness of the cured adhesive layer is about 0 to 5um less than that before the curing.
Further, when the chip is baked, the chip can be put into an oven for constant temperature baking for 30 minutes.
In one embodiment of the present invention, the back surface of the wafer 21 is brushed with a steel mesh.
Preferably, the thickness of the glue layer is controlled by the thickness of the steel mesh, and the thickness of the steel mesh used for the first glue layer 21 is greater than the thickness of the steel mesh used for the second glue layer 22.
Still preferably, the thickness of the first adhesive layer 21 is 30um, the thickness of the second adhesive layer is 20um, and the thickness of the steel mesh used by the first adhesive layer is 30um and the thickness of the steel mesh used by the second adhesive layer is 20um during manufacturing. After the surface mounting is finished, the thickness of the adhesive layer on the product can be more than 30um, and the product requirement can be met. Of course, the thicknesses of the first adhesive layer and the second adhesive layer of the present invention are not limited to the above values, and the thicknesses of the first adhesive layer and the second adhesive layer can be set according to actual needs.
In one embodiment of the present invention, the first and second glue layers 22 and 23 are baked at constant temperature using an oven to effect curing while the first and second glue layers 22 and 23 are cured.
Further, when the first adhesive layer 22 and the second adhesive layer 23 were baked at constant temperature, the baking time was set to 30 minutes.
Still further, the temperature at which the second adhesive layer 23 is hot-melted is greater than or equal to the curing temperature of the second adhesive layer 23 and less than the curing temperature of the first adhesive layer 22.
Preferably, the first glue layer 22 and the second glue layer 23 are of the same material. The first glue layer 22 and the second glue layer 23 are insulating glue. The insulating adhesive is preferably 8006 NS.
In one embodiment of the present invention, the curing temperature of the first glue layer is between 140 ℃ and 150 ℃. Preferably, the curing temperature of the first glue layer is 145 ℃.
In one embodiment of the present invention, the curing temperature of the second glue layer is between 120 ℃ and 130 ℃. Preferably, the curing temperature of the second glue layer is 125 ℃.
The wafer is cut after being glued, chips are formed through cutting, then the chips are placed into a slicing machine for high Wen Niantie, glue layers on the back surfaces of the chips are melted by using a high-temperature cushion block, preferably, the cushion block is heated, the temperature of the cushion block is 125 ℃, the second glue layer is melted by using the cushion block, at the moment, the second glue layer is melted completely, the glue thickness of a product can be ensured to be more than 30um after the surface mounting is finished due to the high solidification temperature of the first glue layer, the product meets the requirement of the product, after the surface mounting is finished, the first glue layer and the second glue layer are baked for 30 minutes at the constant temperature of 175 ℃ by using an oven, the first glue layer and the second glue layer are solidified integrally, the two glue layers are melted into an integral structure, the integral thickness change of the glue layers is small, and the quality of the product can be ensured.
The present invention has been described in detail with reference to the embodiments of the drawings, and those skilled in the art can make various modifications to the invention based on the above description. Accordingly, certain details of the illustrated embodiments are not to be taken as limiting the invention, which is defined by the appended claims.
Claims (10)
1. The manufacturing method of the wafer back adhesive layer is characterized by comprising the following steps of:
brushing glue on the back surface of the wafer to form a first glue layer;
solidifying the first glue layer;
performing second glue brushing on the back surface of the wafer to form a second glue layer on the first glue layer;
curing the second adhesive layer, wherein the curing temperature of the second adhesive layer is lower than that of the first adhesive layer; and
and when the chip is stuck, the second adhesive layer is subjected to hot melting to finish the sticking of the chip.
2. The method of claim 1, wherein after the bonding, the chip is baked at a temperature higher than a curing temperature of the first adhesive layer.
3. The method of claim 1, wherein the brushing is performed by using a steel mesh when brushing the back surface of the wafer.
4. The method of claim 3, wherein the thickness of the glue layer formed is controlled by the thickness of the steel mesh, and the thickness of the steel mesh used for the first glue layer is greater than the thickness of the steel mesh used for the second glue layer.
5. The method of claim 1, wherein the first glue layer and the second glue layer are baked at a constant temperature by an oven to effect curing when the first glue layer and the second glue layer are cured.
6. The method of claim 5, wherein the baking time is set to 30 minutes when the first and second glue layers are baked at constant temperature.
7. The method of claim 1, wherein the second glue layer is thermally melted at a temperature greater than or equal to a curing temperature of the second glue layer and less than a curing temperature of the first glue layer.
8. The method of claim 1, wherein the first glue layer and the second glue layer are made of the same material.
9. The method of claim 1, wherein the curing temperature of the first glue layer is between 140 ℃ and 150 ℃.
10. The method of claim 1, wherein the second glue layer has a curing temperature between 120 ℃ and 130 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310146544.8A CN116246964A (en) | 2023-02-21 | 2023-02-21 | Method for manufacturing wafer back adhesive layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310146544.8A CN116246964A (en) | 2023-02-21 | 2023-02-21 | Method for manufacturing wafer back adhesive layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116246964A true CN116246964A (en) | 2023-06-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310146544.8A Pending CN116246964A (en) | 2023-02-21 | 2023-02-21 | Method for manufacturing wafer back adhesive layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116246964A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117253779A (en) * | 2023-11-17 | 2023-12-19 | 西安天光半导体有限公司 | Back side glue brushing method of semiconductor wafer |
-
2023
- 2023-02-21 CN CN202310146544.8A patent/CN116246964A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117253779A (en) * | 2023-11-17 | 2023-12-19 | 西安天光半导体有限公司 | Back side glue brushing method of semiconductor wafer |
| CN117253779B (en) * | 2023-11-17 | 2024-01-23 | 西安天光半导体有限公司 | Back side glue brushing method of semiconductor wafer |
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