CN116246846A - Preparation method of isolation layer of miniature transformer - Google Patents

Preparation method of isolation layer of miniature transformer Download PDF

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Publication number
CN116246846A
CN116246846A CN202211042535.6A CN202211042535A CN116246846A CN 116246846 A CN116246846 A CN 116246846A CN 202211042535 A CN202211042535 A CN 202211042535A CN 116246846 A CN116246846 A CN 116246846A
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China
Prior art keywords
double
polyimide
polished wafer
photoetching
wafer
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CN202211042535.6A
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Inventor
谢强
钟立志
刘燕
孙金池
屈怀泊
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Beijing Microelectronic Technology Institute
Mxtronics Corp
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Beijing Microelectronic Technology Institute
Mxtronics Corp
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Priority to CN202211042535.6A priority Critical patent/CN116246846A/en
Publication of CN116246846A publication Critical patent/CN116246846A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B19/00—Apparatus or processes specially adapted for manufacturing insulators or insulating bodies
    • H01B19/04—Treating the surfaces, e.g. applying coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B19/00—Apparatus or processes specially adapted for manufacturing insulators or insulating bodies
    • H01B19/02—Drying; Impregnating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/303—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups H01B3/38 or H01B3/302
    • H01B3/306—Polyimides or polyesterimides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

The invention relates to a preparation method of a miniature transformer isolation layer, which comprises the following steps: selecting an N type <100> double-polished wafer as a substrate; evaporating a layer of aluminum on the double polished wafer, and carrying out photoetching on the surface of the aluminum layer to form a photoetching pattern; placing the double polished wafers subjected to photoetching into aluminum corrosive liquid for corrosion, and removing the photoetching patterns on the surfaces of the double polished wafers to obtain an aluminum layer; producing a layer of plasma oxide film on the surface of the double-polished wafer, carrying out surface photoetching, and removing the photoetching pattern on the surface to obtain an oxide layer; and evaporating a layer of gold on the surface of the double-polished wafer, carrying out surface photoetching, then placing the double-polished wafer into gold electroplating solution for electroplating, and removing surface photoresist to obtain the first gold electrode. According to the invention, the thickness of polyimide of the isolation layer is increased, so that the breakdown voltage parameter and the flatness between the coils of the transformer are improved, and the consistency of devices is improved.

Description

Preparation method of isolation layer of miniature transformer
Technical Field
The invention relates to a preparation method of a miniature transformer isolation layer, and belongs to the field of preparation of semiconductor miniature transformer isolation layers.
Background
Polyimide process technology is widely used in semiconductor process technology based on the particularities of semiconductor lithography processes and self-materials. Polyimide is one of the organic polymer materials with the best comprehensive performance. The high temperature resistance reaches more than 400 ℃, the long-term use temperature range is between-200 ℃ and 300 ℃, and the high temperature resistant composite material is widely applied to the fields of aviation, aerospace, microelectronics, nanometer, liquid crystal, separation membranes, laser and the like as a special engineering material. Polyimide has been fully recognized as a promising polymer material, and its application in insulating materials and structural materials is expanding.
Most of miniature transformers are made of polyimide to form isolation layers, the thickness is about 1 micron, part of polyimide isolation layers can reach 5 microns, and the consistency of devices is poor.
Disclosure of Invention
The invention solves the technical problems that: the preparation method of the isolation layer of the miniature transformer is provided to overcome the defects of the prior art, and the thickness of polyimide of the isolation layer is increased to improve the breakdown voltage parameter and the flatness between the coils of the transformer and the consistency of devices.
The solution of the invention is as follows:
the preparation method of the isolation layer of the miniature transformer comprises the following steps:
s1, selecting an N-type <100> double-polished wafer as a substrate;
s2, evaporating a layer of aluminum on the double polished wafers in the step S1, and carrying out photoetching on the surface of the aluminum layer to form a photoetching pattern; placing the double polished wafers subjected to photoetching into aluminum corrosive liquid for corrosion, and removing the photoetching patterns on the surfaces of the double polished wafers to obtain an aluminum layer;
s3, producing a layer of plasma oxide film on the surface of the double-polished wafer in the S2, carrying out surface photoetching, and removing the photoetching pattern on the surface to obtain an oxide layer;
s4, evaporating a layer of gold on the surface of the double-polished wafer in the S3, carrying out surface photoetching, then placing the double-polished wafer into gold electroplating solution for electroplating, and removing surface photoresist to obtain a first gold electrode;
s5, coating polyimide glue on the surface of the double-polished wafer in the S4 for multiple times, and photoetching the surface of the polyimide when the thickness of the double-polished wafer meets the process requirement, and removing redundant polyimide glue of a photoetching pattern by using positive photoresist developer to form a polyimide isolation layer;
s6, evaporating a layer of gold on the surface of the double-polished wafer in S5, carrying out surface photoetching, then placing the double-polished wafer into gold electroplating solution for electroplating, and removing surface photoresist to obtain a second gold electrode;
and S7, coating polyimide glue on the surface of the double-polished wafer in S6, carrying out surface photoetching, corroding polyimide by using positive photoresist developer, and removing the photoresist on the surface to obtain a polyimide layer.
Furthermore, the polyimide isolation layer is processed on the surface of the double-polished wafer through oxidation, photoetching, etching, cleaning, evaporation and electroplating processes.
Further, in S5, the thickness of polyimide is adjusted, so as to control the breakdown voltage parameter of the isolation layer.
Furthermore, the thickness of the polyimide layer is increased through polyimide gumming twice, and the rotational speed of gum homogenizing is increased when polyimide gumming is performed for the third time, so that the overall uniformity of the wafer is improved.
Further, 4-6 ml of polyimide glue is dripped on the center of the double-polished wafer in the S4 for the first time, the double-polished wafer rotates for 4-6 seconds at the speed of 490-510 revolutions per minute, polyimide completely covers the surface of the double-polished wafer after the process is finished, the double-polished wafer continues to rotate for 55-65 seconds at the speed of 1470-1530 revolutions per minute, the double-polished wafer is put into an oven at 89-91 ℃ for baking for 8-12 minutes after the process is finished, the solvent in the polyimide volatilizes, and the thickness of polyimide on the surface is controlled to be 7-9 microns and the uniformity is controlled to be 9-11%.
Further, 4-6 ml of polyimide glue is dropped on the center of the double-polished wafer for the second time, the double-polished wafer is rotated for 4-6 seconds at the speed of 490-510 revolutions per minute, polyimide completely covers the surface of the double-polished wafer after the process is finished, the double-polished wafer is continuously rotated for 55-65 seconds at the speed of 1470-1530 revolutions per minute, the wafer is put into an oven at 89-91 ℃ for baking for 8-12 minutes after the process is finished, the solvent in the polyimide is volatilized, and the thickness of polyimide on the surface is controlled to be 16-20 microns and the uniformity is controlled to be 9-11%.
Further, 4-6 ml of polyimide glue is dropped on the center of the double-polished wafer for the third time, the double-polished wafer is rotated for 4-6 seconds at the speed of 490-510 rpm, the polyimide completely covers the surface of the double-polished wafer after the process is finished, the double-polished wafer is continuously rotated for 55-65 seconds at the speed of 1960-2040 rpm, the wafer is put into an oven at 119-121 ℃ after the process is finished to bake for 18-22 minutes, the solvent in the polyimide is volatilized, and the thickness of the polyimide on the surface is controlled to be 22-26 microns and the uniformity is controlled to be below 5%.
Further, the double-polished wafer subjected to three polyimide coating is placed on a gluing table, positive photoresist of SPR400G-1.2 is dripped on the surface of the double-polished wafer, and photoresist homogenization is carried out for 28-32 seconds at the speed of 3950-4050 r/min, so that a layer of photoresist with the thickness of 0.9-1.3 microns is formed on the surface of the polyimide.
Further, the double-polished wafer is put into a photoetching machine for 2-4 seconds of exposure, the double-polished wafer is put into a photoresist developing solution CD-26 after exposure, the double-polished wafer is taken out after being soaked for 300-330 seconds, the double-polished wafer is put into pure water, the double-polished wafer is taken out after being stood for 4-6 minutes, and the wafer is put into a spin dryer for spin-drying at the speed of 990-1010 r/min for 8-10 minutes, so that an isolation layer pattern is formed.
Further, the double-polished wafer is placed into acetone to be soaked for 10 to 15 seconds, so that positive photoresist on the surface of the double-polished wafer is dissolved in the acetone, the double-polished wafer is taken out and then placed into alcohol to be soaked for 10 to 15 seconds, the double-polished wafer is placed into a spin dryer to be spin-dried for 8 to 10 minutes at the speed of 990 to 1010 revolutions per minute, the photoetching patterns are removed, the polyimide isolation layer is reserved, and then the solvent is placed into an oven at the temperature of 249 to 251 ℃ to be completely dried, so that the polyimide isolation layer is formed.
Compared with the prior art, the invention has the beneficial effects that:
(1) The polyimide isolation layer with uniform thickness is formed on the surface of the electroplated pattern, so that the repeatability of the process can be improved, and the in-plane difference of the double polished wafers can be reduced;
(2) Through a multi-time polyimide gluing process, under the condition that the dielectric constant of the glue cannot be changed, the breakdown voltage parameter of the polyimide isolation layer can be changed by adjusting the thickness of the glue;
(3) The invention adopts the polyimide gluing technology, can increase the thickness of the polyimide isolation layer to 16 micrometers, and has uniformity below 5%.
Drawings
FIG. 1 is a view of a substrate wafer of the present invention selected;
FIG. 2 is a view of a lead layer process of the present invention;
FIG. 3 illustrates contact hole layer processing in accordance with the present invention;
FIG. 4 illustrates the processing of the bottom layer coil of the present invention;
FIG. 5 is a diagram illustrating the processing of a polyimide spacer layer in accordance with the present invention;
FIG. 6 is a top coil process of the present invention;
FIG. 7 is a diagram illustrating the processing of the polyimide passivation layer of the present invention.
Detailed Description
The invention is further illustrated below with reference to examples.
The preparation method of the isolation layer of the miniature transformer comprises the following steps:
s1, selecting an N type <100> double-polished wafer 01 as a substrate.
S2, evaporating a layer of aluminum on the wafer in the S1, performing a photoetching process on the surface of the aluminum layer, putting the photoetched wafer into aluminum corrosive liquid for corrosion, and removing the photoetched pattern on the surface after aluminum corrosion to obtain the aluminum layer 02 in the figure 2.
S3, producing a layer of plasma oxide film on the surface of the wafer in the S2, carrying out a photoetching process, etching through a pattern of the photoetching process, and removing the photoetching pattern on the surface to obtain the oxide layer 03 in the figure 3.
S4, evaporating a layer of gold on the surface of the wafer in S3, performing a photoetching process on the surface, then placing the wafer into a gold electroplating solution for electroplating, and removing surface photoresist to obtain the gold electrode 04 in FIG. 4.
S5, dripping 5 milliliters of polyimide glue on the center of the wafer in S4, rotating the original wafer for 5 seconds at the speed of 490-510 revolutions per minute, completely covering the surface of the wafer by polyimide after the process is finished, continuously rotating the original wafer for 60 seconds at the speed of 1470-1530 revolutions per minute, and baking the wafer in a baking oven at 89-91 ℃ for 10 minutes after the process is finished, so that the solvent in the polyimide volatilizes, and the thickness of the polyimide on the surface is about 8 microns and the uniformity is about 10%.
And (3) dripping 5 milliliters of polyimide adhesive on the center of the wafer, rotating the original wafer for 5 seconds at the speed of 490-510 rpm, completely covering the surface of the wafer by polyimide after the process is finished, continuously rotating the original wafer for 60 seconds at the speed of 1470-1530 rpm, and baking the wafer in a baking oven at 89-91 ℃ for 10 minutes after the process is finished to volatilize the solvent in the polyimide, wherein the thickness of the polyimide on the surface is about 18 micrometers and the uniformity is about 10%.
And (3) dripping 5 milliliters of polyimide glue on the center of the wafer, rotating the original wafer for 5 seconds at the speed of 490-510 rpm, completely covering the surface of the wafer by polyimide after the process is finished, continuously rotating the original wafer for 60 seconds at the speed of 1960-2040 rpm, and baking the wafer in a baking oven at 119-121 ℃ for 20 minutes after the process is finished to volatilize the solvent in the polyimide, wherein the thickness of the polyimide on the surface is about 24 micrometers and the uniformity is below 5%.
And (3) placing the polyimide-coated wafer into a gluing table, and dripping positive photoresist with SPR400G-1.2 on the surface of the wafer, and homogenizing the photoresist at the speed of 3950-4050 r/min for 30 seconds to form a photoresist layer with the thickness of 1.1 microns on the surface of the polyimide.
And (3) putting the wafer into a photoetching machine for 3 seconds of exposure, putting the wafer into a photoresist developing solution CD-26 after exposure, soaking for 300-330 seconds, taking out, putting into pure water, standing for 5 minutes, taking out, putting the wafer into a spin dryer for spin-drying at the speed of 990-1010 revolutions per minute for 10 minutes, and making an isolation layer pattern.
Soaking the wafer in acetone for 10-15 seconds to dissolve the positive photoresist on the surface of the wafer in the acetone, taking out, soaking in alcohol for 10-15 seconds, putting the wafer in a spin dryer for 10 minutes at the speed of 990-1010 rpm, removing the photoetching patterns, reserving the polyimide isolation layer, and then putting the wafer in a 249-251 ℃ oven to completely dry the solvent to form the polyimide isolation layer 05 in fig. 5.
S6, evaporating a layer of gold on the surface of the wafer in S5, performing a photoetching process on the surface, then placing the wafer into a gold electroplating solution for electroplating, and removing surface photoresist to obtain the gold electrode 06 in FIG. 6.
And S7, performing polyimide gumming on the surface of the wafer in S6, performing a photoetching process on the surface, corroding the polyimide by using positive photoresist developer through a photoetching process pattern, and removing the photoresist on the surface to obtain the polyimide layer 07 in FIG. 7.
The polyimide isolation layer with uniform thickness is formed on the surface of the electroplated pattern, so that the repeatability of the process can be improved, and the in-plane difference of the double polished wafers can be reduced;
through a multi-time polyimide gluing process, under the condition that the dielectric constant of the glue cannot be changed, the breakdown voltage parameter of the polyimide isolation layer can be changed by adjusting the thickness of the glue;
the invention adopts the polyimide gluing technology, can increase the thickness of the polyimide isolation layer to 16 micrometers, and has uniformity below 5%.
Although the present invention has been described in terms of the preferred embodiments, it is not intended to be limited to the embodiments, and any person skilled in the art can make any possible variations and modifications to the technical solution of the present invention by using the methods and technical matters disclosed above without departing from the spirit and scope of the present invention, so any simple modifications, equivalent variations and modifications to the embodiments described above according to the technical matters of the present invention are within the scope of the technical matters of the present invention.

Claims (10)

1. The preparation method of the isolation layer of the miniature transformer is characterized by comprising the following steps:
s1, selecting an N-type (100) double-polished wafer (01) as a substrate;
s2, evaporating a layer of aluminum on the double polished wafers in the step S1, and carrying out photoetching on the surface of the aluminum layer to form a photoetching pattern; placing the double polished wafers subjected to photoetching into aluminum corrosive liquid for corrosion, and removing the photoetching patterns on the surfaces of the double polished wafers to obtain an aluminum layer (02);
s3, producing a layer of plasma oxide film on the surface of the double-polished wafer in the S2, carrying out surface photoetching, and removing the photoetching pattern on the surface to obtain an oxide layer (03);
s4, evaporating a layer of gold on the surface of the double-polished wafer in the S3, carrying out surface photoetching, then placing the double-polished wafer into gold electroplating solution for electroplating, and removing surface photoresist to obtain a first gold electrode (04);
s5, coating polyimide glue on the surface of the double-polished wafer in the S4 for multiple times, and photoetching the surface of the polyimide when the thickness of the double-polished wafer meets the process requirement, and removing redundant polyimide glue of a photoetching pattern by using positive photoresist developer to form a polyimide isolation layer (05);
s6, evaporating a layer of gold on the surface of the double-polished wafer in S5, carrying out surface photoetching, then placing the double-polished wafer into gold electroplating solution for electroplating, and removing surface photoresist to obtain a second gold electrode (06);
and S7, coating polyimide glue on the surface of the double-polished wafer in S6, carrying out surface photoetching, corroding polyimide by using positive photoresist developer, and removing the photoresist on the surface to obtain a polyimide layer (07).
2. The method of claim 1, wherein the polyimide spacer is processed on the surface of the double polished wafer by oxidation, photolithography, etching, cleaning, evaporation, and electroplating.
3. The method for preparing an isolation layer of a micro-transformer according to claim 1, wherein in S5, the control of the breakdown voltage parameter of the isolation layer is achieved by adjusting the thickness of polyimide.
4. The method for preparing a micro-transformer isolation layer according to claim 1, wherein,
through polyimide rubberizing twice, increase polyimide layer thickness, when polyimide rubberizing for the third time, thereby improve even glue rotational speed and mention the holistic homogeneity of disk.
5. The method for preparing a micro-transformer isolation layer according to claim 4, wherein 4-6 ml of polyimide glue is dripped on the center of the double-polished wafer in the step S4 for the first time, the double-polished wafer is rotated for 4-6 seconds at the speed of 490-510 rpm, polyimide completely covers the surface of the double-polished wafer after the process is finished, the double-polished wafer is continuously rotated for 55-65 seconds at the speed of 1470-1530 rpm, the double-polished wafer is put into an oven at 89-91 ℃ for baking for 8-12 minutes after the process is finished, the solvent in the polyimide is volatilized, and the thickness of the polyimide on the surface is controlled to be 7-9 micrometers and the uniformity is controlled to be 9% -11%.
6. The method for preparing a micro-transformer isolation layer according to claim 5, wherein 4-6 ml of polyimide glue is dropped on the center of the double polished wafer for the second time, the double polished wafer is rotated for 4-6 seconds at the speed of 490-510 rpm, polyimide completely covers the surface of the double polished wafer after the process is finished, the double polished wafer is continuously rotated for 55-65 seconds at the speed of 1470-1530 rpm, the wafer is put into an oven at 89-91 ℃ for baking for 8-12 minutes after the process is finished, the solvent in the polyimide is volatilized, and the thickness of the polyimide on the surface is controlled to be 16-20 micrometers and the uniformity is controlled to be 9% -11%.
7. The method for preparing the isolation layer of the miniature transformer according to claim 6, wherein 4-6 milliliters of polyimide glue is dripped on the center of the double polished wafer for the third time, the double polished wafer is rotated for 4-6 seconds at the speed of 490-510 revolutions per minute, polyimide completely covers the surface of the double polished wafer after the process is finished, the double polished wafer is continuously rotated for 55-65 seconds at the speed of 1960-2040 revolutions per minute, the wafer is put into an oven at 119-121 ℃ after the process is finished, the solvent in the polyimide is volatilized, and the thickness of the polyimide on the surface is controlled to be 22-26 microns and the uniformity is controlled to be less than 5%.
8. The method for preparing a micro-transformer isolation layer according to claim 7, wherein a double-polished wafer subjected to three polyimide coating processes is placed on a glue coating table, positive photoresist of SPR400G-1.2 is dripped on the surface of the double-polished wafer, and photoresist is uniformly coated for 28-32 seconds at a speed of 3950-4050 rpm, so that a photoresist layer with a thickness of 0.9-1.3 microns is formed on the surface of the polyimide.
9. The method for preparing the isolation layer of the miniature transformer according to claim 8, wherein the double-polished wafer is put into a photoetching machine for 2-4 seconds, the double-polished wafer is put into a photoresist developing solution CD-26 after exposure, the double-polished wafer is taken out after being soaked for 300-330 seconds, the double-polished wafer is put into pure water, the double-polished wafer is taken out after being stood for 4-6 minutes, and the wafer is put into a spin dryer for spin drying at the speed of 990-1010 revolutions per minute for 8-10 minutes to form an isolation layer pattern.
10. The method for preparing the isolation layer of the miniature transformer according to claim 9, wherein the double-polished wafer is placed in acetone for soaking for 10-15 seconds, so that positive photoresist on the surface of the double-polished wafer is dissolved in the acetone, taken out and then placed in alcohol for soaking for 10-15 seconds, the double-polished wafer is placed in a spin dryer for spin drying at the speed of 990-1010 r/min for 8-10 minutes, the photoetching patterns are removed, the polyimide isolation layer is reserved, and then the solvent is completely dried in an oven at the temperature of 249-251 ℃ to form the polyimide isolation layer (05).
CN202211042535.6A 2022-08-29 2022-08-29 Preparation method of isolation layer of miniature transformer Pending CN116246846A (en)

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