CN103645609A - Method for improving photoresist profile - Google Patents
Method for improving photoresist profile Download PDFInfo
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- CN103645609A CN103645609A CN201310554269.XA CN201310554269A CN103645609A CN 103645609 A CN103645609 A CN 103645609A CN 201310554269 A CN201310554269 A CN 201310554269A CN 103645609 A CN103645609 A CN 103645609A
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Abstract
The invention relates to a method for improving a photoresist profile, comprising the following steps of: selecting exposure parameters of primary known reference exposure, and carrying out a multi-time exposure technology based on the exposure parameters; when carrying out each-time exposure technology, and making sure that energy and focal length of each-time exposure, and energy and focal length of the reference exposure satisfy certain relations. The said technical scheme can greatly improve the photoresist profile after exposure and development, and can raise an exposure technology horizontal. Simultaneously, the method of the invention is especially suitable for a preparation technology of a pattern with a super large aspect ratio, and further prepares a semiconductor device with better performances.
Description
Technical field
The present invention relates to semiconductor lithography field, be specifically related to a kind of method of improving photoresist pattern.
Background technology
Along with the development of semiconductor fabrication process, the area of semi-conductor chip is more and more less, so the precision of semiconductor technology also becomes more important.In semiconductor fabrication process, one of them important technique is exactly photoetching, and photoetching is by the design transfer on mask plate, to be the technological process of the photoengraving pattern on wafer, so the quality of photoetching can directly have influence on the performance of the chip of final formation.
Nowadays integrated circuit is towards microminiaturized development, various relatively special technique occurs thereupon, critical size require in 200nm left and right and depth-width ratio require to surpass 10(traditional handicraft generally in 2-5 left and right) technique in field of lithography, be the work of a very challenging property, traditional disposable exposure mode can not meet present demand.In conventional lithography field, adopt general single exposure pattern, often occur that photoresist open top loss is larger, and the loss of photoresist open bottom is less, cause photoresist open top and bottom opening otherness larger, give in the technological process of preparing super large depth-width ratio figure and brought certain difficulty.
Chinese patent (CN 102054667A) discloses a kind of method of applying photoresist stripping process protection photoetching alignment mark, wherein, comprise the following steps: treating the dielectric layer surface resist coating of covering metal layer, make the photoetching alignment mark region on described dielectric layer covered by photoresist, and the thickness of photoresist layer is greater than the thickness of the metal level for the treatment of accumulation; Expose, development treatment, to retain the photoresist covering on described photoetching alignment mark region, and the photoresist that other parts are covered is removed; Accumulation metal level; Peel off the metal level covering on the photoresist that covers on described photoetching alignment mark region and this photoresist.
The single exposure technique that this patent adopts, but in the larger patterning technique of some depth-width ratios, adopt single exposure technique possibly cannot obtain a good photoresist pattern, and then in follow-up preparation technology, cannot obtain a desirable device size.
Chinese patent (CN 101122749) discloses a kind of formation method of litho pattern, comprising: semiconductor substrate is provided; Described semiconductor base is moved into plasma etching equipment described semiconductor-based basal surface is carried out to plasma ashing processing; Spin coating photoresist on described semiconductor base; The described semiconductor base with photoresist is sent into exposure machine to expose; Wafer after exposure is moved into developing apparatus to develop.
This patent is to take conventional art single exposure to carry out photoetching process, because single exposure is in the preparation technology of super large depth-width ratio figure, the photoetching agent pattern that possibly cannot one time to produce go out desired gauge, the cost that simultaneously carries out ion implantation technology is also higher, step is more loaded down with trivial details, has increased to a certain extent production cost and production time.
Summary of the invention
The present invention provides a kind of method of improving photoresist pattern according to the deficiencies in the prior art, by taking multiexposure, multiple exposure technique, carry out photoetching, and obtain best exposure effect by controlling exposure rate and the focal length of each exposure technology, and then obtain good photoresist pattern, improve photoetching process.
The technical solution used in the present invention is:
Improve a method for photoresist pattern, be applied in photoetching process, wherein, comprise the following steps:
Choose the exposure parameter of a known reference exposure, described exposure parameter comprises exposure energy and exposure focal length;
Carry out multiexposure, multiple exposure technique, when carrying out each described exposure technology, according to described exposure parameter, control energy and the focal length that carries out each exposure in multiexposure, multiple exposure.
Above-mentioned method, wherein, while carrying out multiexposure, multiple exposure technique, the energy adopting while at every turn exposing need meet the following conditions:
E=E1+E2+E3+...+En；
Wherein, the energy that E is described reference exposure, E1 is the energy exposing for the first time, and E2 is the energy exposing for the second time, and E3 is the energy exposing for the third time ... En is the energy of the n time exposure, and n is exposure frequency;
The ratio of E1:E2:E3:...:En is set according to process requirements.
Above-mentioned method, wherein, while carrying out multiexposure, multiple exposure technique, the focal length adopting while at every turn exposing need meet the following conditions:
F=（F1+F2+F3+...+Fn）/n；
Wherein, the focal length that F is described reference exposure, F1 is the focal length of exposure for the first time, the focal length of F2 when exposing for the second time, the focal length of F3 when exposing for the third time, Fn is the n time exposure rate of exposing; N is exposure frequency.
Above-mentioned method, wherein, the exposure parameter of described reference exposure is for obtaining the exposure parameter of the single exposure of optimum exposure effect.
Above-mentioned method, wherein, the exposure energy that carries out described each exposure technology successively decreases gradually, and the exposure focal length of each exposure technology increases progressively gradually.
Above-mentioned method, wherein, described exposure technology is applied in the preparation technology of super large depth-width ratio figure.
Because the present invention has adopted above technical scheme, first choose one and obtain optimum exposure effect exposure parameter, then carry out multiexposure, multiple exposure technique, and according to this exposure parameter, adjust exposure energy the exposure focal length of each exposure technology, and then obtain optimum exposure effect, and obtain good photoresist pattern, improve the accuracy of photoetching, can well be applied in the preparation technology of super large depth-width ratio figure, promote production technology.
Embodiment
Below the specific embodiment of the present invention is further described:
The invention provides a kind of photoetching method, in the preparation technology of application and super large depth-width ratio figure, comprise the following steps:
Choose the exposure parameter of known reference exposure, the exposure energy adopting when this exposure parameter comprises exposure and exposure focal length, when adopting above exposure energy and exposure focal length to carry out single exposure, can obtain a photoresist pattern preferably.
Carry out multiexposure, multiple exposure technique, when carrying out each described exposure technology, energy and the focal length of according to known exposure parameter, controlling each exposure in multiexposure, multiple exposure carry out photoetching, to obtain best photoresist pattern simultaneously.
While carrying out multiexposure, multiple exposure technique, the energy adopting while at every turn exposing need meet the following conditions:
E=E1+E2+E3+...+En；
E is the energy of reference exposure, E1 is the energy exposing for the first time, E2 is the energy exposing for the second time, E3 is the energy exposing for the third time ... En is the energy of the n time exposure, n is exposure frequency, while carrying out multiexposure, multiple exposure technique, the summation that each exposure energy is added equals the exposure energy of reference exposure; E1:E2:E3:...:En sets according to process requirements, and the ratio of the energy of each exposure is set according to process requirements; While carrying out multiexposure, multiple exposure technique, the exposure energy of each exposure successively decreases gradually;
Meanwhile, while carrying out multiexposure, multiple exposure technique, the focal length adopting while at every turn exposing need meet the following conditions:
F=（F1+F2+F3+...+Fn）/n；
F is the focal length of reference exposure, and F1 is the focal length of exposure for the first time, the focal length of F2 when exposing for the second time, and the focal length of F3 when exposing for the third time, Fn is the n time exposure rate of exposing; N is exposure frequency.The exposure focal length summation of carrying out multiexposure, multiple exposure equals divided by exposure frequency the focal length that reference exposure adopts.
Owing to originally sending by adopting multiexposure, multiple exposure technique to replace single exposure technique in conventional art, and the energy that guarantees each exposure technology successively decreases gradually and the focal length of each exposure technology increases gradually, and then reduced the damage that photoresist bottom caused along with the carrying out of each exposure technology, the size difference that has simultaneously reduced open top and bottom opening after photoetching, has improved the pattern of photoresist after photoetching.
Provide an embodiment to be further elaborated the present invention below:
First choose the exposure parameter of a known reference exposure, optimum exposure energy based on single exposure is 30Mj, according to formula: E=E1+E2+E3+...+En, this select proportionate relationship be respectively (1:1) 15mJ/15mJ and (1.4:1) 17.5mJ/12.5mJ as double exposure energy.According to experimental result, show, when double exposure ability is 17.5mJ and 12.5mJ, after exposing, the pattern of photoresist is better.As can be seen here, the energy(energy of double exposure) size is special ratios while being related to, can obtain reasonable photoresist proflie(pattern).
Equally, the optimum exposure focus based on single exposure is 0.6um, according to formula F=(F1+F2+F3+...+Fn)/n, chooses best double exposure focal length, at this, chooses 0.1/1.1,0.2/1.2, and 0.3/1.3 is as the focal length of double exposure.Experiment shows, the focal length of double exposure is that in 0.1 and 1.1 situation, photoresist pattern is best, and (0.1+1.1)/2=0.6, fits like a glove with formula provided by the invention, has verified the correctness of its formula.
In above embodiment, the present invention selects double exposure, but in actual application, is not limited to and only adopts double exposure, can select more than twice exposure frequency, and then obtain best technique effect according to production technology and actual conditions.
In sum, the present invention first chooses the reference exposure that once can access preferred process parameter, and carry out multiexposure, multiple exposure according to the exposure energy of this reference exposure and focal length, and the summation that guarantees each exposure energy equals the exposure energy of reference exposure and the energy of each exposure successively decreases, guarantee that each summation of exposing focal length equals the focal length of reference exposure divided by exposure frequency and the focal length that at every turn exposes increases progressively simultaneously, can improve the pattern of photoresist after exposure imaging, improve the technological level of exposure, be particularly useful in the preparation technology of super large depth-width ratio figure, and then prepare the better semiconductor devices of performance.
Above preferred embodiment of the present invention is described.It will be appreciated that, the present invention is not limited to above-mentioned specific implementations, and the equipment of wherein not describing in detail to the greatest extent and structure are construed as with the common mode in this area to be implemented; Any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or being revised as the equivalent embodiment of equivalent variations, this does not affect flesh and blood of the present invention.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (6)
1. improve a method for photoresist pattern, be applied to, in photoetching process, it is characterized in that, comprise the following steps:
Choose the exposure parameter of a known reference exposure, described exposure parameter comprises exposure energy and exposure focal length;
Carry out multiexposure, multiple exposure technique, when carrying out each described exposure technology, according to described exposure parameter, control energy and the focal length that carries out each exposure in multiexposure, multiple exposure.
2. the method for claim 1, is characterized in that, while carrying out multiexposure, multiple exposure technique, the energy adopting while at every turn exposing need meet the following conditions:
E=E1+E2+E3+...+En；
Wherein, the energy that E is described reference exposure, E1 is the energy exposing for the first time, and E2 is the energy exposing for the second time, and E3 is the energy exposing for the third time ... En is the energy of the n time exposure, and n is exposure frequency;
The ratio of E1:E2:E3:...:En is set according to process requirements.
3. the method for claim 1, is characterized in that, while carrying out multiexposure, multiple exposure technique, the focal length adopting while at every turn exposing need meet the following conditions:
F=（F1+F2+F3+...+Fn）/n；
Wherein, the focal length that F is described reference exposure, F1 is the focal length of exposure for the first time, the focal length of F2 when exposing for the second time, the focal length of F3 when exposing for the third time, Fn is the n time exposure rate of exposing; N is exposure frequency.
4. the method for claim 1, is characterized in that, the exposure parameter of described reference exposure is for obtaining the exposure parameter of the single exposure of optimum exposure effect.
5. the method for claim 1, is characterized in that, the exposure energy that carries out described each exposure technology successively decreases gradually, and the exposure focal length of each exposure technology increases progressively gradually.
6. the method as described in claim 1-5 any one, is characterized in that, described exposure technology is applied in the preparation technology of super large depth-width ratio figure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310554269.XA CN103645609B (en) | 2013-11-08 | 2013-11-08 | A kind of method improving photoresist pattern |
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| CN201310554269.XA CN103645609B (en) | 2013-11-08 | 2013-11-08 | A kind of method improving photoresist pattern |
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| CN103645609A true CN103645609A (en) | 2014-03-19 |
| CN103645609B CN103645609B (en) | 2015-09-30 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104950567A (en) * | 2014-03-25 | 2015-09-30 | 中芯国际集成电路制造(上海)有限公司 | Optical mask fabricating method |
| CN105068385A (en) * | 2015-09-01 | 2015-11-18 | 湘能华磊光电股份有限公司 | Photoetching exposure method used for manufacturing light emitting diode |
| CN116954039A (en) * | 2023-09-21 | 2023-10-27 | 合肥晶合集成电路股份有限公司 | Method and device for determining photoetching process window, storage medium and electronic equipment |
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| JPH11288864A (en) * | 1998-04-01 | 1999-10-19 | Hitachi Ltd | Aperture and drawing method for electron-beam drawing apparatus using the aperture, and manufacture of semiconductor device |
| EP0989463A2 (en) * | 1998-09-24 | 2000-03-29 | Fuji Photo Film Co., Ltd. | Bottom anti-reflective coating material composition for photoresist and method of forming resist pattern |
| US6721940B2 (en) * | 2000-12-20 | 2004-04-13 | Hitachi, Ltd. | Exposure processing method and exposure system for the same |
| US6930757B2 (en) * | 2002-08-08 | 2005-08-16 | Kabushiki Kaisha Toshiba | Managing method of exposure apparatus, managing method of mask, exposure method, and manufacturing method of semiconductor device |
| US7268070B2 (en) * | 2003-05-27 | 2007-09-11 | United Microelectronics Corp. | Profile improvement method for patterning |
| US20080160448A1 (en) * | 2006-10-11 | 2008-07-03 | Samsung Electronics Co., Ltd. | Photoresist compositions and methods of forming a pattern using the same |
| CN102608861A (en) * | 2011-01-19 | 2012-07-25 | 上海华虹Nec电子有限公司 | Method for improving morphology of photoresist on periphery of silicon wafer |
| CN103076722A (en) * | 2013-01-11 | 2013-05-01 | 无锡华润上华科技有限公司 | Exposure method for reducing exposure defocus in marginal area of wafer and photoetching technology |
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2013
- 2013-11-08 CN CN201310554269.XA patent/CN103645609B/en active Active
Patent Citations (8)
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| JPH11288864A (en) * | 1998-04-01 | 1999-10-19 | Hitachi Ltd | Aperture and drawing method for electron-beam drawing apparatus using the aperture, and manufacture of semiconductor device |
| EP0989463A2 (en) * | 1998-09-24 | 2000-03-29 | Fuji Photo Film Co., Ltd. | Bottom anti-reflective coating material composition for photoresist and method of forming resist pattern |
| US6721940B2 (en) * | 2000-12-20 | 2004-04-13 | Hitachi, Ltd. | Exposure processing method and exposure system for the same |
| US6930757B2 (en) * | 2002-08-08 | 2005-08-16 | Kabushiki Kaisha Toshiba | Managing method of exposure apparatus, managing method of mask, exposure method, and manufacturing method of semiconductor device |
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| US20080160448A1 (en) * | 2006-10-11 | 2008-07-03 | Samsung Electronics Co., Ltd. | Photoresist compositions and methods of forming a pattern using the same |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104950567A (en) * | 2014-03-25 | 2015-09-30 | 中芯国际集成电路制造(上海)有限公司 | Optical mask fabricating method |
| CN105068385A (en) * | 2015-09-01 | 2015-11-18 | 湘能华磊光电股份有限公司 | Photoetching exposure method used for manufacturing light emitting diode |
| CN116954039A (en) * | 2023-09-21 | 2023-10-27 | 合肥晶合集成电路股份有限公司 | Method and device for determining photoetching process window, storage medium and electronic equipment |
| CN116954039B (en) * | 2023-09-21 | 2023-12-08 | 合肥晶合集成电路股份有限公司 | Method and device for determining photoetching process window, storage medium and electronic equipment |
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| CN103645609B (en) | 2015-09-30 |
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