CN116230484A - Processing apparatus and wafer processing method - Google Patents

Processing apparatus and wafer processing method Download PDF

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Publication number
CN116230484A
CN116230484A CN202310167005.2A CN202310167005A CN116230484A CN 116230484 A CN116230484 A CN 116230484A CN 202310167005 A CN202310167005 A CN 202310167005A CN 116230484 A CN116230484 A CN 116230484A
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China
Prior art keywords
processing
sheet conveying
wafer
shielding piece
conveying channel
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CN202310167005.2A
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Chinese (zh)
Inventor
周仁
荒见淳一
安超
柴智
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Jiangsu Leadmicro Nano Technology Co Ltd
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Jiangsu Leadmicro Nano Technology Co Ltd
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Priority to CN202310167005.2A priority Critical patent/CN116230484A/en
Publication of CN116230484A publication Critical patent/CN116230484A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The application discloses a processing apparatus and a wafer processing method. The processing apparatus includes a main body and a lifting mechanism. The main body is provided with a processing cavity, a sheet conveying channel and a mounting cavity. The lifting mechanism is arranged in the mounting cavity and comprises a movable shielding piece. The side wall of the processing cavity is provided with a sheet conveying port, and the sheet conveying channel is communicated with the processing cavity through the sheet conveying port. The mounting cavity is communicated with the sheet conveying channel, and the shielding piece selectively stretches into the sheet conveying channel. When the shielding piece stretches into, the shielding piece shields the sheet conveying channel and seals the processing cavity. By the mode, the processing quality of the processing equipment on the wafer can be improved.

Description

Processing apparatus and wafer processing method
Technical Field
The present application relates to the field of semiconductor technology, and in particular, to a processing apparatus and a wafer processing method.
Background
A wafer is a silicon wafer used to fabricate silicon semiconductor circuits. During wafer fabrication, wafers are processed. The processed wafer may be subjected to a subsequent patterning or etching process to obtain the desired circuitry. The wafer is processed using a processing apparatus. The process requires wafer transfer to the process chamber. In the related art, due to the requirement of the conveying sheet of the equipment, a conveying sheet channel communicated with the processing cavity is also arranged in the processing equipment. The space formed by the sheet conveying channel is greatly different from other nearby parts in a thermal field or a radio frequency field under a vacuum condition. And the sheet conveying channel is easy to accumulate particles, and the particles can fall on a wafer in the sheet conveying process or the processing process, so that particle pollution is caused. The wafer transfer channels may result in reduced quality of wafer processing within the processing chamber.
Disclosure of Invention
The embodiment of the application provides processing equipment and a wafer processing method, which can improve the processing quality of the processing equipment on a wafer.
In a first aspect, embodiments of the present application provide a processing apparatus. The processing apparatus includes a main body and a lifting mechanism. The main body is provided with a processing cavity, a sheet conveying channel and a mounting cavity. The lifting mechanism is arranged in the mounting cavity and comprises a movable shielding piece. The side wall of the processing cavity is provided with a slice conveying port, and the slice conveying channel is communicated with the processing cavity through the slice conveying port; the mounting cavity is communicated with the sheet conveying channel, and the shielding piece selectively stretches into the sheet conveying channel. When the shielding piece stretches into, the shielding piece shields the sheet conveying channel.
In a second aspect, embodiments of the present application provide a wafer processing method. The wafer processing method comprises the following steps:
the wafer is transferred from the wafer transfer channel into the processing chamber.
And controlling the shielding piece of the lifting mechanism to ascend so as to shield the sheet conveying channel.
The wafer is processed within the processing chamber.
And controlling the shielding piece to descend and eliminating shielding of the sheet conveying channel.
And taking the wafer out of the processing cavity from the wafer self-conveying channel.
The beneficial effects of this application are: different from the prior art, when the shielding piece of the lifting mechanism descends, the piece conveying channel is communicated with the processing cavity. At this time, the wafer transfer operation can be performed, and the wafer can be smoothly transferred from the wafer transfer channel into the processing chamber. When the shielding piece of the lifting mechanism is lifted, the sheet conveying channel can be blocked, and the communication between the sheet conveying channel and the processing cavity is closed. At this point, processing operations may be performed. By arranging the lifting mechanism, when the wafer is processed in the processing cavity, the shielding piece can isolate the processing cavity from the sheet conveying channel, so that the distribution of the thermal field and the radio frequency field in the processing cavity can be more uniform; on the other hand, particles in the wafer conveying channel can be reduced from entering the processing cavity, so that particle pollution to the wafer is reduced. Thus, uniformity of wafer processing can be improved, and quality of wafer processing can be improved.
Drawings
FIG. 1 is a schematic diagram of an embodiment of a processing apparatus of the present application;
FIG. 2 is a schematic view of the lowering of the elevator mechanism shield in the processing apparatus of FIG. 1;
FIG. 3 is a schematic view of the elevator mechanism shield of FIG. 2;
FIG. 4 is a schematic view of the lifting mechanism shield of FIG. 2 raised;
FIG. 5 is a schematic view of another embodiment of the lifting mechanism shown in FIG. 2;
fig. 6 is a flow chart illustrating steps of a wafer processing method according to the present application.
Detailed Description
The following description of the technical solutions in the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
The inventors herein have discovered during research that in a processing tool, it is desirable to transfer a wafer into a processing chamber for processing. The processing cavity is communicated with a slice conveying channel with a certain height and width. The space formed by the sheet conveying channel has larger difference with other nearby parts on a thermal field or a radio frequency field under a vacuum condition, so that the uniformity of treatment can be affected, and the quality of treatment is reduced. And the chip conveying channel is easy to accumulate particles, the particles possibly fall on the wafer in the chip conveying process or the processing process, so that particle pollution is caused, and the wafer quality is affected. The present application may provide the following embodiments in order to improve the above technical problems.
Referring to fig. 1, an embodiment of a processing apparatus 1 of the present application describes an exemplary structure of the processing apparatus 1. The processing apparatus 1 comprises a main body 10. The main body 10 has a processing chamber 11 and a transfer channel 12. The transfer passage 12 communicates with the processing chamber 11. The processing chamber 11 is used for processing a wafer, for example, depositing a thin film (plating film) on the surface of the wafer, etching or preheating the surface of the wafer, or the like. The processing apparatus 1 is described in the following by way of example with respect to deposition of a thin film on a wafer surface. Wafers can be transferred from the process front end into the process chamber 11 through the wafer transfer channel 12. The processed wafer can also be transferred to the rear end of the process through the transfer passage 12.
The processing apparatus 1 further includes a heater 111 and a shower plate 113. The heater 111 is movably disposed within the process chamber 11. The heater 111 is capable of carrying and heating a wafer to meet the process conditions of vapor deposition. The heater 111 may move or rotate within the process chamber 11. Thereby enabling the wafer to be positioned at different locations within the processing chamber 11 to meet different process conditions.
The main body 10 is further provided with a gas phase passage 112, and when the processing apparatus 1 processes a wafer, a gas phase raw material (or referred to as a precursor) is supplied into the processing chamber 11 through the gas phase passage 112, and the gas phase raw material is blown toward the wafer in a gas form. A shower plate 113 is further provided above the heater 111, and the gas phase passage 112 is located above the shower plate 113. After entering the processing chamber 11 through the gas channel 112, the gas raw material can be split through the spraying plate 113, so that the gas raw material can be uniformly blown to the wafer.
The vapor phase raw material flows in the processing chamber 11, so that the wafer surface can deposit a thin film having a certain thickness by the flowing vapor phase raw material. The main body 10 is also provided with a suction channel 15, the suction channel 15 being adapted to be connected to an air pump. The sidewall of the processing chamber 11 is provided with a pumping hole 16 communicating with a pumping channel 15. Through the air suction channel 15 and the air suction hole 16, the gas phase raw material entering the processing cavity 11 can flow to the air suction channel 15 under the action of the negative pressure of the air pump after the deposition reaction of the wafer surface, so that the gas phase raw material in the processing cavity 11 can flow. Further, the air extraction passage 15 is annularly arranged. The pumping holes 16 communicating with the pumping channel 15 are provided in the sidewall of the processing chamber 11 on the peripheral side of the heater 111. And, the gas phase passage 112 is located directly above the geometric center of the heater 111. By the arrangement, after the gas-phase material flows to the wafer, the gas-phase material can uniformly flow radially outwards from the geometric center of the wafer, so that the gas-phase material can uniformly contact with the surface of the wafer, and the uniformity of processing is improved.
With reference to fig. 1 and 2, the treatment apparatus 1 further comprises a lifting mechanism 20. The body 10 is also provided with a mounting cavity 13. The side wall of the processing cavity 11 is provided with a slice conveying port 14, and the slice conveying channel 12 is communicated with the processing cavity 11 through the slice conveying port 14. The mounting cavity 13 communicates with the transfer plate channel 12. The lifting mechanism 20 is arranged in the mounting cavity 13. The lifting mechanism 20 comprises a movable shutter 21. The shutter 21 selectively protrudes into the transfer sheet channel 12. When the shutter 21 is inserted, the shutter 21 shields the sheet transfer passage 12.
Specifically, when the shutter 21 of the elevating mechanism 20 is lowered, the sheet transfer path 12 communicates with the processing chamber 11. At this time, the wafer transfer operation can be performed, and the wafer can be smoothly transferred from the wafer transfer passage 12 into the processing chamber 11. When the shutter 21 of the lifting mechanism 20 is lifted, the sheet transfer passage 12 can be blocked, and the passage between the sheet transfer passage 12 and the processing chamber 11 can be closed. In this case, a treatment operation such as vapor deposition plating can be performed. By providing the lifting mechanism 20, the shielding member 21 can isolate the processing chamber 11 from the wafer transfer channel 12 when the wafer is processed in the processing chamber 11, so that particles in the wafer transfer channel 12 can be reduced to enter the processing chamber 11, and particle pollution to the wafer can be reduced.
In the related art, since the processing chamber 11 is communicated with the wafer transfer channel 12, heat and radio frequency in the processing chamber 11 are distributed into the wafer transfer channel 12, resulting in uneven distribution of the thermal field and the radio frequency field in the processing chamber 11, and further, reduced processing quality of the wafer. The shielding piece 21 is arranged to isolate the processing cavity 11 from the sheet conveying channel 12, so that the influence of the sheet conveying channel 12 on the thermal field and the radio frequency field in the processing cavity 11 is reduced, and the uniformity of the distribution of the thermal field and the radio frequency field in the processing cavity 11 is further improved. In summary, the present application can improve the uniformity of processing operations such as wafer coating, and improve the quality of wafer processing.
Further, when the shutter 21 is extended into the sheet transfer path 12, the shutter 21 covers the sheet transfer port 14 to close the sheet transfer port 14. After the transfer port 14 is closed, the processing chamber 11 can be isolated from the transfer channel 12. Because the slice conveying port 14 is arranged on the side wall of the processing cavity 11, after the slice conveying port 14 is shielded, most of the slice conveying channel 12 can be shielded, the influence of the slice conveying channel 12 on the processing cavity 11 can be further weakened, and the thermal field and the radio frequency field can be distributed in a regular cavity, so that the uniformity of the thermal field and the radio frequency field distribution is further improved.
Referring to fig. 3, in one embodiment, the outer wall of the processing chamber 11 is cylindrically configured, and the shielding member 21 is arc-shaped, so that when the shielding member 21 covers the transfer port 14, the shielding member 21 abuts against the outer wall of the processing chamber 11. By the arrangement, the shape of the shielding piece 21 can be adapted to the shape of the side wall of the processing cavity 11, on one hand, the tightness of the shielding piece 21 for shielding the slice conveying port 14 can be improved, and on the other hand, the processing cavity 11 after the shielding piece 21 is closed can be made into a regular cavity, so that the uniformity of distribution of a thermal field and a radio frequency field is further improved. Alternatively, the shutter 21 is made of the same material as the inner wall of the treatment chamber 11. The material may be, for example, alumina ceramic or zirconia ceramic. In this way, the thermal conductivity coefficient or the surface property and other performance parameters of the shielding member 21 and the inner wall of the processing cavity 11 can be the same, so that the distribution of the thermal field and the radio frequency field in the processing cavity 11 can be further improved, and the processing uniformity such as coating and the like can be improved. Alternatively, the shielding element 21 is arranged in the shape of a circular arc, and the central angle of the shielding element 21 is 90-160 degrees. For example, 100 ° -150 °, 110 ° -130 °, or 120 °. The circular arc-shaped shielding member 21 can be favorably attached to the outer side wall of the processing chamber 11, and thus the sealing performance of shielding the transfer port 14 can be improved. Alternatively, the shutter 21 may be provided in a plate shape, without being particularly limited.
Wherein the material of the shutter 21 is ceramic or metal (e.g. aluminum alloy, titanium alloy). The material of the body 10 may be ceramic or metal. The material of the shield 21 may be of the same or similar nature as the material comprising the body 10 to further increase the uniformity of the distribution of the heating and radio frequency fieldsSex. The surface roughness Ra of the shutter 21 is less than or equal to 0.8. By this arrangement, the surface of the shutter 21 can be made smoother, thereby reducing accumulation of particles and reducing the occurrence of particle contamination. Optionally, the shutter 21 has a surface coating of a material Al 2 O 3 、Y 2 O 3 Or ZrO. Al (Al) 2 O 3 、Y 2 O 3 The coating can act to prevent the shield 21 from being corroded by oxidation, thereby increasing the useful life of the shield 21. The ZrO coating can play a role of shielding radio frequency, so that leakage of radio frequency field after the shielding piece 21 shields the transfer port 14 is further reduced, and uniformity of radio frequency field distribution is further improved.
In one embodiment, the main body is provided with a plurality of slice conveying channels 12, the side wall of the processing cavity 11 is provided with slice conveying ports 14 corresponding to the plurality of slice conveying channels 12, and the shielding piece 21 is arranged in a circular ring shape and sleeved with the processing cavity 11. The body 10 may input or output wafers to or from the processing chamber 11 through a plurality of wafer transfer channels 12 and wafer transfer ports 14. The shielding member 21 is arranged in a circular ring shape, and can simultaneously shield the plurality of slice transmitting ports 14 by lifting so as to improve the distribution of the heat field and the radio frequency field in the processing cavity 11.
The following describes embodiments of the lifting mechanism 20 in this application in detail:
referring to fig. 2 and 4, fig. 2 is a schematic view of the shutter 21 in a lowered state, and fig. 4 is a schematic view of the shutter 21 raised. Specifically, the lift mechanism 20 includes a first end plate 22. A first end plate 22 is arranged in said mounting cavity 13. The shutter 21 is provided on the side of the first end plate 22 adjacent to the sheet transfer channel 12. The lifting mechanism 20 further comprises a support column 25, and the support column 25 is slidably disposed through the first end plate 22. The first end plate 22 is provided with a sliding hole, and the support column 25 is slidably fitted with the sliding hole. The shutter 21 is mounted to the end of the support column 25 adjacent the sheet transfer channel 12. The lifting mechanism 20 further comprises a driving device 27, wherein the driving device 27 is arranged on one side of the first end plate 22 away from the sheet conveying channel 12, and a driving shaft of the driving device 27 is connected with the supporting column 25.
Specifically, the driving device 27 is capable of driving the support column 25 to slide with respect to the first end plate 22. The support column 25 is capable of supporting the shutter 21 for mounting the shutter 21. The support column 25 is capable of moving the shutter 21 relative to the first end plate 22 so as to selectively block the transfer sheet passage 12. So configured, the drive device 27 can be spaced from the transfer channel 12 by the first end plate 22 to reduce the impact of the drive device 27 on the transfer channel 12.
Further in connection with fig. 2 and 4, the lifting mechanism 20 further comprises a second end plate 23, a guide post 24 and a slider 26. A guide post 24 is provided between the first end plate 22 and the second end plate 23 to connect the two. The slider 26 is located between the first end plate 22 and the second end plate 23. The slider 26 is slidably disposed on the guide post 24. The first and second end plates 22, 23 and the guide posts 24 can form a space for mounting the support posts 25 within the mounting cavity 13. One end of the support column 25 near the second end plate 23 is fixedly connected with a sliding member 26, and a driving shaft of the driving device 27 is connected with the sliding member 26. Specifically, the driving device 27 can drive the sliding member 26 to slide relative to the guide post 24. The sliding member 26 can drive the supporting column 25 to slide relative to the first end plate 22. The support column 25 can drive the shielding piece 21 to move so as to selectively shield the sheet conveying channel 12. In this way, by sliding the sliding member 26 with the guide post 24 and the supporting post 25 with the first end plate 22, the shielding member 21 can be stably moved in the sheet conveying channel 12, so that particles generated by vibration or collision can be reduced, and particle pollution can be reduced. Alternatively, the support column 25 and the guide column 24 may be symmetrically provided with two, to further increase the sliding stability of the shutter 21.
Referring to fig. 2 and 4, a driving device 27 is disposed between the first end plate 22 and the slider 26, and is mounted to the first end plate 22. The sliding member 26 is provided with a receiving groove 261, and a driving shaft of the driving device 27 is extended into the receiving groove 261 and connected with a bottom of the receiving groove 261. When the shielding member 21 extends into the sheet conveying channel 12, the driving device 27 is partially accommodated in the accommodating groove 261. By this arrangement, the driving device 27 can be mounted by using the space between the first end plate 22 and the second end plate 23, thereby improving the space utilization rate, making the lifting mechanism 20 as a whole more compact, and saving the space occupied by the lifting mechanism.
In an embodiment, the side of the second end plate 23 adjacent to the first end plate 22 is further provided with a buffer member 28, and the buffer member 28 may be made of a material such as plastic or rubber, which is not particularly limited. When the shutter 21 is lowered, the lower end of the slider 26 abuts against the buffer 28, so that the slider 26 and the shutter 21 are brought into a stopped state relatively smoothly, and the impact of the slider 26 and the shutter 21 on the elevating mechanism 20 and the processing apparatus 1 when being lowered is reduced, so that the influence of vibration on the processing apparatus 1 is reduced.
Further, referring to fig. 5, since the first end plate 22 is provided with a sliding hole, the support column 25 needs to slide in the sliding hole, which may result in poor sealing effect at the sliding hole. In order to improve the above technical problems, the present application may also provide the following embodiments. The lifting mechanism 20 further comprises a telescopic sealing tube 29, the sealing tube 29 is sleeved outside the supporting column 25, one end of the sealing tube 29 is connected with the first end plate 22, and the other end of the sealing tube 29 is connected with the sliding piece 26. By the arrangement, after the connection part of the telescopic sealing tube 29 and the first end plate 22 and the sliding piece 26 is sealed, the sealing tube 29 can isolate the mounting cavity 13 from the sheet conveying channel 12 on the premise that the sliding piece 26 and the supporting column 25 are not affected, so that the technical problem of poor sealing performance at the sliding hole is solved.
In connection with fig. 1, in particular, since the transfer channel 12 and the processing chamber 11 need to be in a state of being isolated from the atmosphere during operation, the inside of the processing apparatus 1 needs to be evacuated before the gas phase material can be injected. However, since the mounting chamber 13 is in communication with the atmosphere and the slide hole provided in the first end plate 22 communicates the transfer passage 12 with the mounting chamber 13, this will affect the proper operation of the transfer passage 12 and the processing chamber 11. So that the mounting cavity 13 is spaced from the chip transfer channel 12 by the first end plate 22 being disposed in communication with the mounting cavity 13 and the chip transfer channel 12. Further, by sealing one end of the seal tube 29 with the sliding hole, and sealing the other end against the slider 26, the sliding hole is communicated with the inside of the seal tube 29, not with the mounting chamber 13, and the sliding hole is prevented from communicating the sheet transfer passage 12 with the mounting chamber 13. In other words, the space inside the seal tube 29, the clearance of the sliding hole, the transfer passage 12 and the processing chamber 11 are isolated from the installation chamber 13 by the seal tube 29, so that the influence of the atmosphere on the transfer passage 12 and the processing chamber 11 through the sliding hole is reduced, and the processing quality is ensured.
In one embodiment, referring to fig. 5, the first end plate 22 is provided with a blow channel (not shown) having an air outlet 221 and an air inlet (not shown). The air outlet 221 is provided at a side of the first end plate 22 remote from the processing chamber 11, and the air outlet 221 communicates with the sheet conveying passage 12. The air inlet communicates with a sealing tube 29. The side wall of the sealing tube 29 or the end connected to the second end plate 23 can be connected to an air source device such as an air pump. An air source device such as an air pump can supply purge gas at a certain pressure into the sealing tube 29. The purge gas can flow to the gas outlet 221 through the gas blowing passage after entering the gas inlet. The gas outlet 221 is disposed on a side of the first end plate 22 away from the processing chamber 11, so that the purge gas blown out from the gas outlet 221 can purge the wafer transfer channel 12, thereby reducing the deposition of particles in the wafer transfer channel 12, reducing the particle pollution to the wafer, and improving the processing quality.
In conjunction with fig. 6, a wafer processing method is also provided. The wafer processing method comprises the following steps:
s100, the wafer is conveyed from the wafer conveying channel 12 into the processing cavity 11.
During the production of wafers, a number of processes are typically involved. The wafer is processed only by starting a plurality of processes. The wafer needs to be transferred from the apparatus performing the pre-process to the processing apparatus 1, and the processing apparatus 1 can process it. The processing apparatus 1 has a wafer transfer path 12 through which wafers pass, and wafers in a pre-process can be transferred into the processing chamber 11 through the wafer transfer path 12 for subsequent processing steps.
S200, controlling the shielding piece 21 of the lifting mechanism 20 to ascend so as to shield the sheet conveying channel 12.
Because the space formed by the transfer channel 12 has a large difference in thermal field or radio frequency field with other nearby parts under vacuum condition, the uniformity of the processing operation such as depositing a film can be affected, and the quality of the processing is reduced. And the transfer channels 12 are prone to accumulate particles, which may fall onto the wafer during transfer or processing, causing particle contamination and affecting wafer quality. So that the shutter 21 can be raised to block the transfer passage 12, on the one hand, to make the distribution of the thermal field and the rf field in the processing chamber 11 more uniform. On the other hand, particles in the wafer transfer channel 12 can be reduced from entering the processing cavity 11, so that particle pollution to the wafer is reduced.
S210 controls the elevating mechanism 20 to blow air toward the sheet conveying path 12 in a direction away from the processing chamber 11.
The lifting mechanism 20 blows air to purge the wafer transfer channel 12, thereby reducing the deposition of particles in the wafer transfer channel 12, reducing the particle pollution to the wafer, and improving the processing quality.
The S300 wafer is processed in the processing chamber 11.
After the shutter 21 shields the transfer passage 12, the wafer can be processed in the processing chamber 11. The specific method for processing the wafer comprises the following steps:
s310 places the wafer on the heater 111 and controls the heater 111 to heat the wafer.
The heater 111 is capable of carrying a wafer. The heater 111 heats the wafer to provide conditions for processing the wafer.
S320, introducing a gas phase material flowing toward the wafer into the processing chamber 11 through the gas phase passage 112.
For example, during the film plating process, the vapor phase material introduced into the processing chamber 11 in the vapor phase passage 112 can be deposited on the wafer surface by reaction, thereby realizing film plating of the wafer.
S330 withdraws the gas phase material through the pumping channel 15 to flow the gas phase material in the process chamber 11.
The vapor phase material needs to flow continuously in the process chamber 11, and the vapor phase material after reacting with the wafer needs to be discharged out of the process chamber 11. The gas-phase material can be pumped out by the gas-phase channel 15, and the gas-phase material in the processing cavity 11 can continuously flow under the cooperation of the gas-phase channel 112 and the gas-phase channel 15 so as to process the surface of the wafer.
S390 controls the lifting mechanism 20 to stop blowing.
After the wafer processing is completed, the wafer needs to be transferred from the wafer transfer channel 12, and if the lifting mechanism 20 is still blowing, the residual dust and particles in the wafer transfer channel 20 will be lifted, so that the probability of causing particle pollution to the wafer is increased. It is necessary to control the elevating mechanism 20 to stop blowing.
S400, controlling the shielding piece 21 to descend and removing shielding of the sheet conveying channel 12.
After the wafer processing is completed, the processed wafer needs to be transferred to the next process. The transfer of the wafer still needs to be accomplished through the transfer channel 12. The shutter 21 is controlled to descend to unblock the transfer channel 12 so that the wafer can pass through the transfer channel 12.
S500 the wafer is taken out of the processing chamber 11 from the wafer transfer passage 12.
After the transfer passage 12 is no longer blocked, the wafer can be taken out of the processing chamber 11, so that the wafer can be transferred to the next process.
The foregoing is only examples of the present application, and is not intended to limit the scope of the patent application, and all equivalent structures or equivalent processes using the descriptions and the contents of the present application or other related technical fields are included in the scope of the patent application.

Claims (18)

1. A processing apparatus, comprising:
the main body is provided with a processing cavity, a sheet conveying channel and a mounting cavity;
the lifting mechanism is arranged in the mounting cavity and comprises a movable shielding piece;
the side wall of the processing cavity is provided with a sheet conveying port, and the sheet conveying channel is communicated with the processing cavity through the sheet conveying port; the mounting cavity is communicated with the sheet conveying channel, and the shielding piece selectively stretches into the sheet conveying channel; when the shielding piece stretches into the sheet conveying channel, the shielding piece shields the sheet conveying channel.
2. The processing apparatus according to claim 1, wherein:
when the shielding piece stretches into the sheet conveying channel, the shielding piece covers the sheet conveying opening so as to seal the sheet conveying opening.
3. The processing apparatus according to claim 2, wherein:
the outer wall of the processing cavity is in a cylindrical shape, the shielding piece is in an arc-shaped shape, and when the shielding piece covers the sheet conveying opening, the shielding piece is abutted to the outer wall of the processing cavity.
4. A processing device according to claim 3, characterized in that:
the shielding piece is arranged in a circular arc shape, and the central angle of the shielding piece is 90-160 degrees.
5. The processing apparatus according to claim 1, wherein:
the lifting mechanism comprises a first end plate, the first end plate is arranged in the mounting cavity, and the shielding piece is arranged on one side, close to the sheet conveying channel, of the first end plate.
6. The processing apparatus according to claim 5, wherein:
the first end plate is arranged at the communication part of the mounting cavity and the sheet conveying channel so as to space the mounting cavity from the sheet conveying channel.
7. The processing apparatus according to claim 5, wherein:
the lifting mechanism further comprises a support column, the support column is arranged on the first end plate in a sliding penetrating mode, and the shielding piece is arranged at one end, close to the sheet conveying channel, of the support column; the lifting mechanism further comprises a driving device, and a driving shaft of the driving device is connected with the supporting column.
8. The processing apparatus according to claim 7, wherein:
the lifting mechanism further comprises a second end plate, a guide column and a sliding piece, wherein the guide column is arranged between the first end plate and the second end plate; the sliding piece is arranged on the guide post in a sliding way, the support post is fixedly connected with the sliding piece, and the driving device is in driving connection with the sliding piece.
9. The processing apparatus according to claim 8, wherein:
the driving device is arranged between the first end plate and the sliding piece, the sliding piece is provided with a containing groove, and the driving device is connected with the bottom of the containing groove; when the shielding piece stretches into the sheet conveying channel, the driving device is partially accommodated in the accommodating groove.
10. The processing apparatus according to claim 8, wherein:
the first end plate is provided with a sliding hole, the support column is in sliding fit with the sliding hole, the lifting mechanism further comprises a telescopic sealing tube, the sealing tube is sleeved outside the support column, one end of the sealing tube is connected with the first end plate, and the other end of the sealing tube is connected with the sliding piece.
11. The processing apparatus according to claim 10, wherein:
the first end plate is provided with an air blowing channel, the air blowing channel is provided with an air outlet and an air inlet, the air outlet is arranged on one side, far away from the processing cavity, of the first end plate, and the air inlet is communicated with the sealing tube.
12. The processing apparatus according to claim 1, wherein:
the shielding piece is made of ceramic or metal.
13. The processing apparatus according to claim 1, wherein:
the surface roughness Ra of the shielding piece is less than or equal to 0.8.
14. The processing apparatus according to claim 1, wherein:
the shieldingThe member has a surface coating layer made of Al 2 O 3 、Y 2 O 3 Or ZrO.
15. The processing apparatus according to claim 1, wherein:
the main body is provided with a plurality of sheet conveying channels, the side wall of the processing cavity is provided with sheet conveying ports corresponding to the plurality of sheet conveying channels, and the shielding piece is in a circular ring shape and is sleeved with the processing cavity.
16. A method of processing a wafer, comprising:
transferring the wafer from the wafer transfer channel into the processing chamber;
controlling a shielding piece of the lifting mechanism to ascend to shield the sheet conveying channel;
the wafer is processed in the processing cavity;
controlling the shielding piece to descend and removing shielding of the sheet conveying channel;
and taking the wafer out of the processing cavity from the wafer conveying channel.
17. The method according to claim 16, wherein:
after the shielding piece of the control lifting mechanism is lifted to shield the wafer conveying channel, the wafer processing method further comprises the following steps:
controlling the lifting mechanism to blow air to the sheet conveying channel in a direction away from the processing cavity;
before the shutter is controlled to descend and the sheet conveying channel is unblocked, the wafer processing method further comprises the following steps:
and controlling the lifting mechanism to stop blowing.
18. The method according to claim 16, wherein:
processing the wafer in the processing chamber includes:
placing the wafer in a heater, and controlling the heater to heat the wafer;
introducing gas phase materials flowing to the wafer into the processing cavity through a gas phase channel;
the gas phase material is pumped out through a pumping channel to flow the gas phase material within the process chamber.
CN202310167005.2A 2023-02-24 2023-02-24 Processing apparatus and wafer processing method Pending CN116230484A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310167005.2A CN116230484A (en) 2023-02-24 2023-02-24 Processing apparatus and wafer processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310167005.2A CN116230484A (en) 2023-02-24 2023-02-24 Processing apparatus and wafer processing method

Publications (1)

Publication Number Publication Date
CN116230484A true CN116230484A (en) 2023-06-06

Family

ID=86588771

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310167005.2A Pending CN116230484A (en) 2023-02-24 2023-02-24 Processing apparatus and wafer processing method

Country Status (1)

Country Link
CN (1) CN116230484A (en)

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